Claims
- 1. A photoconductive device comprising:
- a. a photoconductive body of antimony trisulfide including opposed major surfaces;
- b. a through-conducting layer on one of said major surfaces of said antimony trisulfide body; said layer comprising an insulating material having metal particles dispersed throughout and including a plurality of said metal particles in contact with said body to form therewith heterojunctions to significantly increase the signal current contrast ratios associated with said device in contrast with those ratios associated with similar devices not including said layer.
- 2. A photoconductive device in accordance with claim 1 wherein said metal particles constitute from about 7 to about 13 percent by volume of the material of said layer.
- 3. A photoconductive device in accordance with claim 2 in which said insulating material consists essentially of an inorganic material.
- 4. A photoconductive device in accordance with claim 3 in which said insulating material is selected from the group consisting of silicon oxide, aluminum oxide, silicon nitride, and boron nitride.
- 5. A photoconductive device in accordance with claim 3 including a layer of transparent conductive material on said major surface of said body opposite to that having said layer thereon.
- 6. A photoconductive device in accordance with claim 5 wherein said metal particles constitute about 10% by volume of the material of said layer.
- 7. A camera tube comprising:
- a. an envelope including a transparent faceplate portion;
- b. an electron beam forming and scanning means within said envelope for scanning an electron beam along a path;
- c. a target within said envelope on said faceplate portion; said target including a surface in the path of said electron beam, said target including in a direction of thickness away from said faceplate portion toward said surface of said target in the path of said electron beam:
- 1. a layer of transparent conductive material on said faceplate portion;
- 2. a body of antimony trisulfide on said layer of transparent conductive material;
- 3. a through-conducting layer on said body comprising an insulator material having conductive particles of metal dispersed throughout; said metal particles comprising from about 7 to about 13% by volume of said through-conducting layer and including a plurality of said conductive particles in contact with said body to form therewith a plurality of heterojunctions.
- 8. The camera tube of claim 7 wherein said insulator comprises an inorganic material.
- 9. The camera tube of claim 8 wherein said through-conducting layer has an approximate thickness of from 500 to 5000 Angstroms.
- 10. The camera tube of claim 9 wherein said insulating material is selected from the group consisting of silicon oxide, aluminum oxide, silicon nitride and boron nitride.
- 11. The camera tube of claim 10 wherein said particles of metal have an approximate diameter of less than 20 Angstroms.
- 12. A photoconductive device including an antimony trisulfide body, the body having associated therewith characteristic signal current contrast ratios, the improvement comprising:
- a through-conducting layer on a surface of said body consisting of an insulating material with conductive particles dispersed throughout for significantly improving the signal current contrast ratios associated with said device over said characteristic ratios.
- 13. The photoconductive device of claim 12 wherein said particles are metal particles.
- 14. The photoconductive device of claim 13, wherein said metal particles comprise from about 7 to about 13% by volume of the material of said layer.
- 15. The photoconductive device of claim 14, wherein said metal particles comprise about 10% by volume of the material of said layer.
Parent Case Info
This application is a continuation-in-part of U.S. application Ser. No. 423,443, filed on Dec. 10, 1973 now abandoned.
US Referenced Citations (4)
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
423443 |
Dec 1973 |
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