The present invention relates to a low dropout regulator, and, in particular embodiments, to a control apparatus for the low dropout regulator.
As technologies further advance, a variety of portable devices, such as mobile phones, tablet PCs, digital cameras, MP3 players and/or the like, have become popular. Each portable device comprises a variety of integrated circuit devices such as central processing units (CPUs), graphics processing units (GPUs), application specific integrated circuits (ASICs), memory chips and the like.
For reducing power consumption, the integrated circuit devices are fabricated with semiconductor processes that operate at low voltages (e.g., 1.2 volts, 1.8 volts and the like). However, the portable device is supplied with higher voltages (e.g., 5 volts, 12 volts and the like). Various power conversion systems and/or devices are employed to convert the supply voltage into suitable voltages for providing power to the integrated circuit devices.
Among the power conversion systems, low dropout (LDO) regulators are widely used in different output voltage domains due to various advantages such as less peripheral components, low output noise, low output ripple, a simple circuit structure and the like.
As shown in
The first feedback resistor RFB1 and the second feedback resistor RFB2 form a voltage divider connected between the output terminal Vo of the LDO regulator and ground. The non-inverting input of the error amplifier EA is connected to a common node of the first feedback resistor RFB1 and the second feedback resistor RFB2. The inverting input of the error amplifier EA is configured to receive a predetermined reference VREF. In operation, the error amplifier EA is configured to detect the output voltage of the LDO regulator. Based on the detected voltage, the error amplifier EA controls the operation of the transistor M1 so as to achieve a regulated output voltage at the output terminal Vo of the LDO regulator.
The LDO regulator includes two poles. A first pole is formed by the high impedance output resistance of the error amplifier EA and the parasitic gate capacitance of the transistor M1. The frequency of the first pole of the LDO regulator can be expressed as:
In Equation (1), fP1 is the frequency of the first pole. CP1 is the capacitance value of the parasitic gate capacitance of the transistor M1, and ro1 is the resistance value of the output resistance of the error amplifier EA.
A second pole is formed by the output equivalent resistance RL and the output capacitor CL. The frequency of the second pole can be expressed as:
In Equation (2), fP2 is the frequency of the second pole. CL is the capacitance value of the output capacitor CL. RL is the resistance value of the equivalent resistor RL.
From Equation (1) and Equation (2), when the current of the load connected to the output terminal Vo of the LDO regulator is small (the resistance value RL is large), the large RL lowers the frequency of the second pole. On the other hand, the transistor M1 may be implemented as a large transistor having a large parasitic capacitance (Cp1) value. In addition, the error amplifier EA may be implemented as a low quiescent current amplifier having a large output resistance (ro1) value. In consideration with the factors above, the frequency fP1 of the first pole is closer to the frequency fP2 of the second pole. In addition, the load of the LDO regulator may vary in a wide range. The load variation causes the frequency of the second pole to change in a wide frequency range. In order to ensure the stability of the feedback loop of the LDO regulator under different load conditions, it is necessary to perform stability compensation on the circuit of the LDO regulator.
In the prior art, in applications where the requirement for the output voltage accuracy of the LDO regulator is not very high (e.g., the built-in LDO module in an integrated chip), a zero with a fixed frequency can be added by connecting a resistor in series at the output terminal to compensate the stability of the LDO regulator.
In Equation (3), gm is the transconductance of the transistor M1. Av is the voltage at the output of the error amplifier EA. After R1 has been added into the LDO regulator, a zero is formed by R1 and CL. The frequency of the zero can be expressed as:
Through the selection of circuit parameters (e.g., the value of R1), the frequency of the introduced zero can be exactly located near the frequency of the first pole so as to compensate for it and achieve the stability of the feedback loop.
The advantage of the compensation apparatus and method discussed above with respect to
As shown in
In some applications, the circuit shown in
These and other problems are generally solved or circumvented, and technical advantages are generally achieved, by preferred embodiments of the present disclosure which provide a control apparatus for a low dropout regulator.
In accordance with an embodiment, an apparatus comprises a first transistor having a first drain/source terminal coupled to an input terminal of a regulator, and a second drain/source terminal coupled to an output terminal of the regulator, a second transistor having a first drain/source terminal coupled to the input terminal of the regulator, and a second drain/source terminal coupled to the output terminal of the regulator through a resistor, and an error amplifier having an inverting input configured to receive a reference, a non-inverting input configured to detect an output voltage of the regulator, and an output coupled to gates of the first transistor and the second transistor.
In accordance with another embodiment, a method comprises configuring a low dropout (LDO) regulator to convert an input voltage into a regulated output voltage, wherein the LDO regulator comprises a first transistor coupled between an input terminal and an output terminal of the LDO regulator, a second transistor coupled to the input terminal directly and coupled to the output terminal through a resistor, and an error amplifier configured to control the first transistor and the second transistor so as to achieve the regulated output voltage, configuring the first transistor and the second transistor such that a current flowing through the first transistor is N times greater than a current flowing through the second transistor, and configuring the resistor and an output capacitor to form a zero to compensate a pole of the LDO regulator.
In accordance with yet another embodiment, a regulator comprises a first transistor having a source coupled to an input terminal of the regulator, and a drain coupled to an output terminal of the regulator, a second transistor having a source coupled to the input terminal of the regulator, and a drain coupled to the output terminal of the regulator through a resistor, an output capacitor coupled between the output terminal of the regulator and ground, wherein the resistor and the output capacitor form a zero to compensate a pole of the regulator, and an error amplifier having an inverting input configured to receive a reference, a non-inverting input configured to detect an output voltage of the regulator, and an output coupled to gates of the first transistor and the second transistor.
The foregoing has outlined rather broadly the features and technical advantages of the present disclosure in order that the detailed description of the disclosure that follows may be better understood. Additional features and advantages of the disclosure will be described hereinafter which form the subject of the claims of the disclosure. It should be appreciated by those skilled in the art that the conception and specific embodiment disclosed may be readily utilized as a basis for modifying or designing other structures or processes for carrying out the same purposes of the present disclosure. It should also be realized by those skilled in the art that such equivalent constructions do not depart from the spirit and scope of the disclosure as set forth in the appended claims.
For a more complete understanding of the present disclosure, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
Corresponding numerals and symbols in the different figures generally refer to corresponding parts unless otherwise indicated. The figures are drawn to clearly illustrate the relevant aspects of the various embodiments and are not necessarily drawn to scale.
The making and using of the presently preferred embodiments are discussed in detail below. It should be appreciated, however, that the present disclosure provides many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use the disclosure, and do not limit the scope of the disclosure.
The present disclosure will be described with respect to preferred embodiments in a specific context, namely a control apparatus for a low dropout regulator. The invention may also be applied, however, to a variety of power regulators. Hereinafter, various embodiments will be explained in detail with reference to the accompanying drawings.
In some embodiments, a first drain/source terminal of the first transistor M1 is coupled to the input terminal of the LDO regulator. A second drain/source terminal of the first transistor M1 is coupled to the output terminal of the LDO regulator. As shown in
In some embodiments, a first drain/source terminal of the second transistor M2 is coupled to the input terminal of the LDO regulator. A second drain/source terminal of the second transistor M2 is coupled to the output terminal of the LDO regulator through the resistor R2. As shown in
As shown in
The resistor R2 and the output capacitor CL form a zero to compensate a first pole of the LDO regulator. The first pole of the LDO regulator is formed by the output resistance of the error amplifier EA and the input capacitance of the first transistor M1. The frequency of the first pole of the LDO regulator is the same as that shown in Equation (1). In some embodiments, in order to compensate the first pole, the frequency of the zero formed by R2 and CL is set to be equal to the frequency of the first pole. Alternatively, the frequency of the zero formed by R2 and CL is set to be close to the frequency of the first pole. In other words, the frequency of the zero formed by R2 and CL is approximately equal to the frequency of the first pole (e.g., within a predetermined range such as +/−10%).
In comparison with the LDO regulator shown in
As shown in
As shown in
In operation, after the resistor R2 has been added between transistors M1 and M2, the transfer function from the output of the error amplifier EA to the non-inverting input end V+ of the error amplifier EA can be expressed as:
In Equation (5), VR2 can be expressed as:
In Equation (6), Δv is the voltage at the output of the error amplifier EA.
In Equation (5), Vo can be expressed as:
In consideration with Equations (6) and (7), the transfer function shown in Equation (5) can be expressed as:
In Equation (8), gm is the transconductance of the transistor M1. As indicated by Equation (8), R2 and CL form a zero. After R2 has been added into the LDO regulator shown in
In operation, when R2 is equal to (N+1)×R1, the frequency fZ2 of the zero in Equation (9) is the same as the frequency fZ1 of the zero in Equation (4). In other words, the same compensation function has been realized. However, the resistance value of the resistor R2 in the circuit shown in
In accordance with an embodiment, the transistors M1 and M2 may be MOSFET devices. Alternatively, the switching element can be any controllable switches such as insulated gate bipolar transistor (IGBT) devices, integrated gate commutated thyristor (IGCT) devices, gate turn-off thyristor (GTO) devices, silicon controlled rectifier (SCR) devices, junction gate field-effect transistor (JFET) devices, MOS controlled thyristor (MCT) devices, gallium nitride (GaN) based power devices, silicon carbide (SiC) based power devices and the like.
It should be noted that the diagram shown in
It should further be noted that
One advantageous feature of the LDO regulator shown in
As shown in
It should be noted the first pole of the LDO regulator shown in
The current bypass circuit 502 is coupled to a common node of the second transistor M2 and the resistor R2. The current bypass circuit 502 is configured to bypass a dc current flowing through the resistor R2. As shown in
The current mirror comprises a fourth transistor M4, a fifth transistor M5 and a sixth transistor M6. As shown in
A drain of the fifth transistor M5 is connected to the drain of the second transistor M2. The sources of the fifth transistor M5 and the sixth transistor M6 are connected are connected to ground. The gate of the fifth transistor M5 is connected to the filter. The gate of the sixth transistor M6 is connected to the drain of the sixth transistor M6.
The filter comprises a filter resistor Rf and a filter capacitor Cf. As shown in
As shown in
Alternatively, in some embodiments, the current mirror is configured such that the ratio of the size of M2 to the size of M4 is the same as the ratio of the size of M5 to the size of M6. Under this configuration, although the dc current flowing through M4 is different from the dc current flowing through M2, the dc current drawn by M5 still bypasses the dc current flowing through M2.
In some embodiments, the filter formed by Rf and Cf functions as a low-pass filter to filter out the ac signal applied to the gates of M5 and M6, so that the entire current mirror circuit does not participate in the ac response of the LDO regulator. Through selecting appropriate parameters of the low-pass filter, a dc component of a current flowing through the second transistor M2 flows through the fifth transistor M5. An ac component of the current flowing through the second transistor M2 flows through the resistor R2. In this way, the transfer function of the original compensation circuit shown in
Referring back to
At step 602, the LDO regulator is configured to convert an input voltage into a regulated output voltage. The LDO regulator comprises a first transistor coupled between an input terminal and an output terminal of the LDO regulator, a second transistor coupled to the input terminal directly and coupled to the output terminal through a resistor, and an error amplifier configured to control the first transistor and the second transistor so as to achieve the regulated output voltage.
At step 604, the first transistor and the second transistor are configured such that a current flowing through the first transistor is N times greater than a current flowing through the second transistor.
At step 606, the resistor and an output capacitor are configured to form a zero to compensate a pole of the LDO regulator.
A source of the first transistor is coupled to the input terminal of the LDO regulator. A drain of the first transistor is coupled to the output terminal of the LDO regulator. A source of the second transistor is coupled to the input terminal of the LDO regulator. A drain of the first transistor is coupled to the output terminal of the LDO regulator through the resistor. An inverting input of the error amplifier is configured to receive a reference. A non-inverting input of the error amplifier is configured to detect an output voltage of the LDO regulator through a voltage divider. An output of the error amplifier is connected to a gate of the first transistor and a gate of the second transistor.
The method further comprises enhancing drive capability of the error amplifier through coupling a buffer stage between an output of the error amplifier and gates of the first transistor and the second transistor.
The buffer stage comprises a current source and a third transistor connected in series between the input terminal of the LDO regulator and ground. The output of the error amplifier is connected to a gate of the third transistor. The gates of the first transistor and the second transistor are connected together and further connected to a common node of the current source and the third transistor.
The method further comprises bypassing a dc current flowing through the resistor through coupling a current bypass circuit to a common node of the second transistor and the resistor.
The current bypass circuit comprises a current mirror and a filter. The current mirror comprises a fourth transistor, a fifth transistor and a sixth transistor. A source of the fourth transistor is connected to sources of the first transistor and the second transistor. A gate of the fourth transistor is connected to the gates of the first transistor and the second transistor. A drain of the fourth transistor is connected to a drain of the sixth transistor. A drain of the fifth transistor is connected to a drain of the second transistor. A gate of the sixth transistor is connected to the drain of the sixth transistor. Sources of the fifth transistor and the sixth transistor are connected are connected to ground. The filter comprises a filter resistor and a filter capacitor. The filter resistor is connected between a gate of the fifth transistor and the gate of the sixth transistor. The filter capacitor is connected between the gate of the fifth transistor and ground.
The method further comprises configuring the filter resistor and the filter capacitor such that a dc component and an ac component of a current flowing through the second transistor flow through the fifth transistor and the resistor, respectively.
Although embodiments of the present disclosure and its advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the disclosure as defined by the appended claims.
Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the disclosure of the present disclosure, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the present disclosure. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps.