This disclosure relates generally to electronic circuits and devices, and more specifically, to a capacitor-less low-dropout (CL-LDO) regulator.
A low-dropout (LDO) voltage regulator is a DC linear voltage regulator that is capable of regulating an output voltage even when the supply voltage is near the output voltage. Advantages of an LDO regulator over other DC-to-DC regulators include the absence of switching, smaller size, and design simplicity.
A capacitor-less low-dropout (CL-LDO) voltage regulator corresponds to a LDO voltage regulator that does not require an off-chip capacitor to achieve stability. Advantages of a CL-LDO regulator over conventional LDO regulators include the lower number of external components and PCB area thereby reducing total cost of the system.
In some applications, an LDO regulator may be used to regulate a voltage applied to the logic gates of a Sea-of-Gates (SoG). In those cases, CL-LDOs regulator solutions may be desired in order to lower total cost of the system.
Therefore, the inventors hereof have recognized a need for a capacitor-less LDO regulator for logic circuits with improved transient performance and power-efficiency while supporting a wide load current range. An SoG load profile includes a dynamic current resulting from logic switching activity (fast-speed), and a leakage current that is mainly dependent on operating temperature (slow-speed). The leakage component can range from a negligible value at low temperatures to values several times higher than the dynamic component at high temperatures. Furthermore, low-power operation modes that employ power and/or clock-gating techniques can also extend the load range requirements in a way that conventional LDO regulators cannot satisfy.
The present invention(s) is/are illustrated by way of example and is/are not limited by the accompanying figures, in which like references indicate similar elements. Elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale.
Systems and methods for a capacitor-less low-dropout (CL-LDO) regulator with pole-zero tracking frequency compensation are disclosed. In various embodiments, a capacitor-less LDO architecture is provided with improved transient performance over a wide range of load currents. Frequency compensation may be obtained through the inclusion of a pole-zero pair with the zero tracking (cancelling the effect of) the output node pole.
Turning to
The first closed-loop structure 102 may resemble a conventional LDO regulator built around the small pass-device M1. This first loop 102 (“first” or “fast closed-loop”) may have a dominant pole at the output node (VOUT) and may provide high-speed response to fast load 101 transients.
The second closed-loop structure 103 (“second” or “slow closed-loop”) may include both small and large pass-devices (e.g., M2), may have an internal dominant pole (typically at the gate node of the large pass-device), and may provide a high current capability at low frequencies. This second loop 103 may operate to maintain a fixed quiescent current level through the small pass-device while directing all exceeding, low-frequency current components to the large pass-device.
A current I1/β provides a mirrored copy of I1 reduced by scaling factor β, and a second current IQ1/β provides reference or quiescent current IQ1, also reduced by the same factor β. The difference between second current IQ1/β and first current I1/β is applied to the gate terminal of M2. Moreover, the output current of transconductance element Gm0 is proportional to the difference between reference voltage VREF and output voltage VOUT. These, and other features of LDO regulator architecture 100 are discussed in connection with various illustrative implementations discussed below.
Turning to
LDO regulator 200 includes two pass devices M1 and M2 (here illustrated as PMOS transistors but the same topology can be built using NMOS output transistor) in parallel with each other and configured to operate concurrently or simultaneously, providing currents I1 and I2, respectively, such that load current IL at the output node is the sum of I1 with I2. The source terminals of M1 and M2 are coupled to a voltage supply rail (Vdd), and the drain terminals of M1 and M2 are coupled to the output node (VOUT) of LDO regulator 200.
On M1's side, the gate terminal of M1 is coupled to the output of a transconductance element (Gm0). Resistor R1 in parallel with capacitor C1 represents the impedance at the gate of M1. Capacitor C1 represents the total capacitance between the gate of M1 and the Vdd supply rail, which includes the parasitic source-to-gate capacitance of M1, other parasitic capacitances, and any integrated capacitor included. Alternatively, C1 may represent the total capacitance between the gate of M1 and low-impedance nodes (AC grounds). And still alternatively, C1 may also represent an equivalent input capacitance between the gate of M1 and any other node where an inverting voltage gain relation (related to gate voltage) is present. Resistor R1 represents the DC output impedance of Gm0 in parallel with any resistive element that may be included. In some cases, transconductance element Gm0 may be implemented, for example, as an operational transconductance amplifier (OTA), as a differential pair, or as a single transistor used as a transconductor. In an AC analysis, the output current of transconductance element Gm0 is proportional to the difference between reference voltage VREF and output voltage VOUT.
On M2's side, resistor R2 in parallel with capacitor C2 represent the impedance at the gate of M2. Capacitor C2 represents the total capacitance between the gate of M2 and the Vdd supply rail, which comprises any capacitive element included, and/or the parasitic capacitances such as the source-to-gate parasitic capacitance of M2. Alternatively, C2 may represent the total capacitance between the gate of M2 and low-impedance nodes (AC grounds). And still alternatively, C2 may also represent an equivalent input capacitance between the gate of M2 and any other node where an inverting voltage gain relation (related to gate voltage) is present. The gate of M2 is driven as a result of comparing current I1 delivered by M1 with a design-defined current IQ1, as exemplified in
When load 101 is in operation, for the purpose of analysis, current IL is divided in a low-frequency (slow varying) component and a high-frequency (fast varying) component. In cases such as when load 101 includes the logic gates of a Sea-of-Gates, the value of the low-frequency (near static) component may become several times greater than that of the high-frequency (dynamic) component especially when leakage currents dominate. In various embodiments, M1's current I1 is designed to provide the high-frequency component of IL (small and fast), whereas M2's current I2 supply the low-frequency component of IL (large and slow).
First closed-loop 102 controls first pass device M1 and second closed-loop 103 controls second pass device M2. In an initial state where IL is smaller than IQ1, second closed-loop 103 turns pass device M2 off and I2 is zero. Only first closed-loop 102 is active and M1's current I1 is equal to IL. As IL increases, however, I1 reaches and then overcomes IQ1 and second closed-loop 103 turns on. At this stage, both control loops 102 and 103 are operating. From this point on, second closed-loop 103 causes the low frequency component of M1's current I1 to stabilize and keep the same value as IQ1 while the remainder of the low-frequency component of IL is provided by M2's current I2. Then, M1 may provide a fast varying I1 current (high-frequency component of IL) having DC offset level maintained at IQ1.
In various implementations, second closed-loop 103 is made capable of providing greater output currents than first closed-loop 102. The size (e.g., aspect ratio) of M2 is larger than that of M1, and second closed-loop 103 has a slower response than first closed-loop 102.
In summary, current I1 provided by pass device M1 is designed to address fast and relatively small variations in IL. Second closed-loop 103, in a slower fashion, adjusts the value of I2 to supply the slow-varying and larger component of IL and to cause I1 to have an low-frequency component centered around IQ1. In response to fast variations in load current IL, the value of current I1 varies around IQ1 and supplies the fast transient components of IL. Current I2 trails behind I1 continuously adjusting DC offset level of I1 to match IQ1. In various implementations, the value of IQ1 may be set reasonably above the maximum instantaneous load current step or peak required to be supported by that application.
As a non-limiting example, assume an initial state where IL is equal to 3 mA, M1 provides current I1 equal to 1.5 mA, and M2 provides current I2 equal to 1.5 mA. Also, assume that IL is subject to step variations of as much as 1 mA in each direction; that is, IL can vary between 2 mA and 4 mA very quickly. The choice of IQ1 should be sufficiently large to ensure that M1 is capable of responding the load variations without moving out its desired region of operation. In this example, IQ1 is selected as 1.5 mA. If, at some point, IL suddenly steps down to 2.5 mA, M1 reacts to the drop almost instantly (M1 is small and fast) and changes the value of I1 from 1.5 mA to 0.5 mA. If this scenario remains stable (no other disturbances), second closed-loop 103 detects that I1 has decreased, and, in response, reduces the value of I2, albeit in a slower fashion (M2 is large). As the value of I2 is reduced from 1.5 mA to 0.5 mA, the value of returns from 0.5 mA to 1.5 mA; where it stays until of the next step change of current IL.
To better explain the foregoing, graph 300 of
In this example, IQ1 is set near 12.5 mA. It should be noted that, over time, second closed-loop 103 works to maintain (curve 302) at the same value as IQ1; that is, approximately 12.5 mA. In the beginning, IL has a magnitude of approximately 20 mA. As such, I1 provides approximately 12.5 mA and I2 provides approximately 7.5 mA. At t=˜2 μs, however, IL changes abruptly from approximately 20 mA to approximately 28 mA. In response, I1 reacts immediately and jumps from approximately 12.5 mA to approximately 20.5 mA, while I2 initially remains at approximately 7.5 mA. Between t=˜2 μs and t=˜3 μs, current I2 is slowly raised from approximately 7.5 mA to approximately 15.5 mA, and drops from approximately 20.5 mA back to approximately 12.5 mA (IQ1), all the while providing the same IL of approximately 28 mA.
Then, at t=˜4 μs, IL drops abruptly from approximately 28 mA to approximately 24 mA. In response, I1 reacts immediately and falls from approximately 12.5 mA to approximately 8.5 mA, while I2 initially remains at approximately 15.5 mA. Between t=˜4 μs and t=˜5 μs, current I2 is slowly reduced from approximately 15.5 mA to approximately 11.5 mA, and I1 is raised from approximately 8.5 mA back to approximately 12.5 mA (IQ1), all the while providing the same IL of approximately 24 mA. This is shown by marker 204, where, at t=5.242 μs, IL=24.0 mA, I1=12.5 mA, and I2=11.5 mA.
At t=˜6 μs, IL changes abruptly from approximately 24 mA to approximately 32 mA. In response, I1 reacts immediately and jumps from approximately 12.5 mA to approximately 20.5 mA, while I2 initially remains at approximately 11.5 mA. Between t=˜6 μs and t=˜7 μs, current I2 is slowly raised from approximately 11.5 mA to approximately 19.5 mA, and I1 drops from approximately 20.5 mA back to approximately 12.5 mA (IQ1), all the while providing the same IL of approximately 32 mA.
At t=˜8 μs, IL again changes abruptly from approximately 32 mA to approximately 40 mA. In response, I1 reacts immediately and again jumps from approximately 12.5 mA to approximately 20.5 mA, while I2 initially remains at approximately 19.5 mA. Between t=˜8 μs and t=˜9 μs, current I2 is slowly raised from approximately 19.5 mA to approximately 27.5 mA, and I1 drops from approximately 20.5 mA back to approximately 12.5 mA (IQ1), all the while providing the same IL of approximately 40 mA. This is shown by marker 205, where, at t=9.2 μs, IL=40.0 mA, I1=12.6 mA, and I2=27.3 mA.
Then, at t=˜10 μs, IL drops abruptly from approximately 40 mA to approximately 32 mA. In response, I1 reacts immediately and falls from approximately 12.5 mA to approximately 4.5 mA, while I2 initially remains at approximately 27.5 mA. Between t=˜10 μs and t=˜11 μs, I2 is slowly reduced from approximately 27.5 mA to approximately 19.5 mA, and I1 is raised from approximately 4.5 mA back to approximately 12.5 mA (IQ1), all the while providing the same IL of approximately 32 mA.
Referring back to
Fast closed-loop 102 has dominant pole at the output node. To make the non-dominant pole at gate of M1 appear at high frequencies, M1 is selected to be a small pass-device with low gate capacitance. In slow closed-loop 103, large pass-device M2 provides the main portion of current IL at high load current conditions. The dominant pole is placed internally at gate of M2, taking advantage of its high gate capacitance. In various embodiments, the capacitance at the gate of M2 is advantageously amplified by factor β (a design variable) as in the case depicted in
In this example, loop 103 maintains M2 cut-off such that LDO regulator 200 behaves in the same manner that of a conventional LDO regulator with a single pass-device (M1) and dominant pole placed at output node. In this case, Av0, wpL, wun, and wp1 are given by the following expressions:
Av0=Gm0×R1×gm1×RL
wpL=1/(RL×CL)
wun=Gm0×R1×gm1/CL
wp1=1/(R1×C1)
Where Av0 is the DC loop gain, wpL is the frequency the first pole at node Vout, wun is the unity gain frequency, and wp1 is the frequency of the non-dominant pole, associated with the gate terminal of pass device M1.
While IL<IQ1, slow closed loop 103 is turned off and has no effect on the operation of LDO regulator 200. As such, LDO regulator 200 behaves as a conventional LDO regulator that has a dominant pole at the output node. As IL rises (RL lowers), the transconductance gm1 of pass device M1 increases. The DC loop gain Av0 remains nearly constant while M1 operates in weak inversion (gm1∝I1 and RL∝1/IL) and decreases when M1 operates in strong inversion (gm1∝√I1 and RL∝1/IL). And the gain-bandwidth product wun increases with gm1. Regulator 200 is designed to be stable within this load current range.
In this example, Av0, wp2, wz2, wpL, wun, and wp1 are given by the following expressions:
Av0=Gm0×R1×gm1×RL×(1+gm2×(R2/β))
wp2=1/(R2×C2)
wz2=Gm2/(βC2)
wpL=1/(RL×CL)
wun=Gm0×R1×gm1/CL
wp1=1/(R1×C1)
Where Av0 is the DC loop gain, wp2 is the frequency of a non-dominant pole associated with the gate of pass device M2, wz2 is the frequency of a zero associated with the gate of pass device M2, wpL is the frequency the first pole at node Vout, wun is the unity gain frequency, and wp1 is the frequency of another non-dominant pole associated with the gate terminal of pass device M1.
Graph 500 shows a performance boost when slow closed-loop 103 turns on, with an increase in DC gain on the extended current range. Slow closed-loop 103 maintains I1=IQ1 in low frequency, hence the transconductance gm1 of pass device M1 is maintained constant. A constant gm1 in turn results in a constant Gain-Bandwidth product. As load current IL rises, zero wz2 tracks pole wpL, both moving towards high frequency. Both move together while M2 operates in weak inversion. When M2 eventually goes into strong inversion (as IL rises), pole wpL moves faster towards higher frequency than zero wz2. Also, DC loop gain Av0 remains nearly constant if M2 operates in weak inversion (gm2∝I2) and decreases if M2 operates in strong inversion (gm2∝√I2). As such, this embodiment is stable over an extended load current range—that is, up to a selected ILMAX, that is mainly determined by M2's maximum current capability.
In various scenarios, reference current IQ1 may not have a fixed value. For example, it may be beneficial to be able to program the magnitude of IQ1 (i.e., by having) a couple of options for IQ1) and to select its value during operation, or to generate IQ1 as a function of some a different parameter (e.g., temperature). For instance, a circuit may detect if M2 is ON (loop 103 operational) or OFF and use that information to adjust the level of IQ1. The system may also adjust IQ1 based on some knowledge of the magnitude expected for the low and high-frequency components for each system operation mode, based on temperature, etc. Or the system may monitor the state of M2 (on or off) to auto-calibrate IQ1. These features may be implemented digitally and/or analogically. In sum, the magnitude of IQ1 may be fixed by design or configurable by system depending on the application.
For simulations, the sizes of the various transistors M1-M11 were set as follows: M1: W=10, L=0.08, m=400; M2: W=10, L=0.08, m=2 k; M3 and M4: W=20, L=0.8, m=80; M5 and M6: W=30, L=0.8, and m=40; M7: W=20, L=0.6, m=10; M8: W=20, L=0.4, m=1; M9: W=20, L=0.4, and m=10; M10: W=10, L=0.08, m=10; M11: W=5, L=0.4, m=1. Current IQ1/β was made equal to 25 μA. The tail current provided to the input pair was made equal to 1 mA and Vb voltage is such that it maintains surrounding transistors operating in the desired bias conditions.
In various embodiments, systems and methods described herein may provide an LDO voltage regulator that uses two pass-devices connected in parallel to an output node: a first pass-device M1 to supply high-frequency load current components, and a second pass-device M2 to supply low-frequency load current components. Techniques for control and frequency compensation are employed that are based on maintaining a fixed DC current level through the first pass-device by directing exceeding low-frequency load currents components to the second pass-device. Particularly, techniques discussed herein involve using two closed-loops with the purpose of providing fast transient response with improved power-efficiency over an extended load current range. Regulation is achieved by using a fast closed-loop 102 with a lower current capability associated with a slow closed-loop 103 with a higher current capability.
As described herein, in an illustrative, non-limiting embodiment, an electronic device may include a load; and a voltage regulator coupled to the load and configured to provide a load current, wherein the voltage regulator includes a first pass device and a second pass device coupled in parallel with each other and configured to operate simultaneously. The load current has a low-frequency component and a high-frequency component. The first pass device provides a first current corresponding to the high-frequency component, and wherein the second pass device provides a second current corresponding to the low-frequency component.
A control loop compares the magnitude of the first current to a magnitude of a reference current. The magnitude of reference current is greater than the peak magnitude of the high-frequency component. The control loop operates to maintain the magnitude of the low-frequency component equal to the magnitude of the reference current over time.
In response to an increase in the low-frequency component of the first current during operation, the control loop causes the magnitude of the second current to increase and causes the low-frequency component of the first current to decrease until the magnitude of the low-frequency component of the first current becomes equal to the magnitude of the reference current. In response to a decrease in the low-frequency component of the first current during operation, the control loop causes the magnitude of the second current to decrease and causes the low-frequency component of the first current to increase until the low-frequency component of the first current becomes equal to the magnitude of the reference current.
The control loop is configured to monitor the difference between the magnitude of the reference current and the magnitude of the low-frequency component of the first current generating as a result the control signal applied to a gate terminal of the second pass device, thereby controlling the magnitude of the second current.
In another illustrative, non-limiting embodiment, a method may include providing current to a load using a first pass device and a second pass device coupled in parallel with each other and configured to operate simultaneously in a voltage regulator, where the first pass device provides a first current corresponding to a high-frequency component of the load current and the second pass device provides a second current corresponding to a low-frequency component of the load current. In response to a decrease in a low-frequency component of the first current during operation, causing the second current to decrease and causing the low-frequency component of the first current to increase; and in response to an increase in the low-frequency component of the first current during operation, causing the second current to increase and causing the low-frequency component of the first current to decrease.
The method includes comparing the magnitude of the first current to a magnitude of a reference current via a control loop, causing the magnitude of the second current to be equal to the difference between a magnitude of the load current and the magnitude of the first current, and maintaining the magnitude of the low-frequency component of the first current equal to the magnitude of a reference current over time. The magnitude of reference current is greater than the peak magnitude of the high-frequency component.
In yet another illustrative, non-limiting embodiment, a voltage regulator includes a first pass device configured to output a first current; and a second pass device coupled in parallel with the first pass device and configured to output a second current simultaneously with the first current, wherein the first current provides a high-frequency portion of a load current, and wherein the second current provides a low-frequency portion of the load current.
A control loop compares the low-frequency component of the first current to a magnitude of a reference current. The control loop maintains the low-frequency component of the first current equal to the magnitude of the reference current over time. The control loop controls the magnitude of the second current by monitoring a difference between the magnitude of the reference current and the magnitude of the first current to generate a control signal configured to drive a gate terminal of the second pass device.
In response to an increase in the low-frequency component of the first current, the control loop causes the magnitude of the second current to increase and causes the magnitude of the low-frequency component of the first current to decrease until the magnitude of the low-frequency component of the first current becomes equal to the magnitude of the reference current. In response to a decrease in the low-frequency component of the first current, the control loop causes the magnitude of the second current to decrease and causes the magnitude of the low-frequency component of the first current to increase until the magnitude of the low-frequency component of the first current becomes equal to the magnitude of the reference current.
In many implementations, the systems and methods disclosed herein may be incorporated into a wide range of electronic devices including, for example, computer systems or Information Technology (IT) products such as servers, desktops, laptops, memories, switches, routers, etc.; telecommunications hardware; consumer devices or appliances such as mobile phones, tablets, television sets, cameras, sound systems, etc.; scientific instrumentation; industrial robotics; medical or laboratory electronics such as imaging, diagnostic, or therapeutic equipment, etc.; transportation vehicles such as automobiles, buses, trucks, trains, watercraft, aircraft, etc.; military equipment, etc. More generally, these systems and methods may be incorporated into any device or system having one or more electronic parts or components.
Although the invention(s) is/are described herein with reference to specific embodiments, various modifications and changes can be made without departing from the scope of the present invention(s), as set forth in the claims below. Accordingly, the specification and figures are to be regarded in an illustrative rather than a restrictive sense, and all such modifications are intended to be included within the scope of the present invention(s). Any benefits, advantages, or solutions to problems that are described herein with regard to specific embodiments are not intended to be construed as a critical, required, or essential feature or element of any or all the claims.
Unless stated otherwise, terms such as “first” and “second” are used to arbitrarily distinguish between the elements such terms describe. Thus, these terms are not necessarily intended to indicate temporal or other prioritization of such elements. The terms “coupled” or “operably coupled” are defined as connected, although not necessarily directly, and not necessarily mechanically. The terms “a” and “an” are defined as one or more unless stated otherwise. The terms “comprise” (and any form of comprise, such as “comprises” and “comprising”), “have” (and any form of have, such as “has” and “having”), “include” (and any form of include, such as “includes” and “including”) and “contain” (and any form of contain, such as “contains” and “containing”) are open-ended linking verbs. As a result, a system, device, or apparatus that “comprises,” “has,” “includes” or “contains” one or more elements possesses those one or more elements but is not limited to possessing only those one or more elements. Similarly, a method or process that “comprises,” “has,” “includes” or “contains” one or more operations possesses those one or more operations but is not limited to possessing only those one or more operations.
Number | Name | Date | Kind |
---|---|---|---|
6046577 | Rincon-Mora et al. | Apr 2000 | A |
7253595 | Oddoart et al. | Aug 2007 | B2 |
7875996 | Nguyen et al. | Jan 2011 | B2 |
8648578 | Zhao et al. | Feb 2014 | B2 |
9588531 | Pelicia et al. | Mar 2017 | B2 |
20080116862 | Yang | May 2008 | A1 |
20090160256 | Nguyen et al. | Jun 2009 | A1 |
20090212753 | Lou | Aug 2009 | A1 |
20100277148 | Zhao et al. | Nov 2010 | A1 |
20110156671 | Gakhar | Jun 2011 | A1 |
20110193538 | Arigliano | Aug 2011 | A1 |
Entry |
---|
Torres, Joselyn et al; “Low Drop-out Voltage Regulator Capacitor-less Architecture Comparison;” IEEE Circuits and Systems Magazine, vol. 14, Issue 2, Published May 19, 2014 pp. 6-26; DOI: 10.1109/MCAS.2014.2314263. |
Number | Date | Country | |
---|---|---|---|
20180024580 A1 | Jan 2018 | US |