Claims
- 1. Dynamic random access memory (DRAM) cells on and in an epitaxial silicon layer over an insulating layer on a semiconductor substrate comprised of:a shallow trench isolation around device areas having recesses over and aligned to said device areas; said insulating layer on said substrate in said recesses, each of said recesses having an opening in said insulating layer to said substrate; an epitaxial layer in each of said recesses extending from said opening and laterally over said insulating layer; a gate oxide on said epitaxial layer in each of said recesses; FET gate electrodes on said gate oxide and over said openings in said insulating layer, and including lightly doped source/drain areas and source/drain contact areas in said epitaxial layer adjacent to said gate electrodes; capacitor node contacts to said source/drain contact areas in said epitaxial layer over said insulating layer; bit line contacts in said epitaxial layer over said insulating layer; capacitors over and contacting said capacitor node contacts, and bit lines over and contacting said bit line contacts.
- 2. The structure of claim 1, wherein said semiconductor substrate is a P doped single-crystal silicon substrate.
- 3. The structure of claim 1, wherein said insulating layer is silicon oxide having a thickness of between about 100 and 200 Angstroms.
- 4. The structure of claim 1, wherein said epitaxial layer is single-crystal silicon and has a thickness of between about 1000 and 5000 Angstroms.
- 5. The structure of claim 1, wherein said gate oxide is a silicon oxide having a thickness of between about 15 and 35 Angstroms.
- 6. The structure of claim 1, wherein said gate electrodes are conductively doped polysilicon.
Parent Case Info
This is a division of patent application Ser. No. 09/697,946, filling date Oct. 30, 2000, A Method For Making Low-Leakage Dram Structures Using Selective Silicon Epitaxial Growth Growth (Seg) On An Insulating Layer, assigned to the same assignee as the present invention.
US Referenced Citations (4)
Number |
Name |
Date |
Kind |
5681776 |
Hebert et al. |
Oct 1997 |
A |
5686343 |
Lee |
Nov 1997 |
A |
5763314 |
Chittipeddi |
Jun 1998 |
A |
6037199 |
Huang et al. |
Mar 2000 |
A |