Low Magnetic Field Sensing Device

Information

• NSF Award
• 9360035

Owner

• Nonvolatile Electronics, Incorporated

• Award Id

  9360035

• Award Effective Date

  1/1/1994 - 31 years ago

• Award Expiration Date

  9/30/1994 - 30 years ago

• Award Amount

  $ 64,480.00

• Award Instrument

  Standard Grant

9360035 Daughton A novel magnetic field sensing device is proposed which uses the magnetic stray field from a Neel wall in a soft (low coercivity) magnetic thin film to bias a Giant Magnetoresistence Ratio (GMR) sensor layer, thereby providing a high resistance change in the sensor layer with a low applied field. Precise lithography (<0.5um) is required to etch the sensor layer to the proper width and to locate the sensor properly with respect to a domain wall in the soft layer. Techniques to control the position of the domain wall will be explored. A demonstration device will demonstrate the feasibility of the concept in Phase I, and it will show at least a 5% change in resistance for an applied field of 2 Oe or less. This demonstration will also clearly show that 10% of higher magnetoresistance is feasible with less than one Oe of applied field. ***

• Program Officer

  Ritchie B. Coryell

• Min Amd Letter Date

  12/27/1993 - 31 years ago

• Max Amd Letter Date

  12/27/1993 - 31 years ago

• ARRA Amount

• Name

  Nonvolatile Electronics Inc

• City

  Eden Prairie

• State

  MN

• Country

  United States

• Address

  11409 Valley View Road

• Postal Code

  553443617

• Phone Number

  6129961608

• First Name

  James

• Last Name

  Daughton

• Email Address

  daughton@nve.com

• Start Date

  1/1/1994 12:00:00 AM

• Name

  Engineering-Electrical

• Code

  55

• Name

  Telecommunications

• Code

  206000