The present invention provides thin film coatings for glass sheets and other substrates. More particularly, the invention provides thin film coatings including a thin photocatalytic film, such as titania, deposited over a thin base layer, such as silica. The invention also provides methods of depositing such coatings onto glass sheets and other substrates.
For many years, it has been known that titanium dioxide can be used as a photocatalyst. A great deal of research has been done with a view toward providing photocatalytic coatings that have self-cleaning properties. The pursuit of self-cleaning photocatalytic window coatings, in particular, has been an active field of exploration. Such coatings typically involve a titanium dioxide layer carried by a glass pane. These coatings are commonly provided with a relatively thick layer of titanium dioxide and/or a specific under-layer system designed for achieving high levels of photoactivity. Thick titanium dioxide layers, unfortunately, produce high levels of visible reflectance, thus creating a somewhat mirror-like appearance. This high visible reflection tends to exaggerate the appearance of dirt on a window. Further, known under-layer systems commonly teach that specific materials and crystal structures must be used for the under-layer film(s) to achieve acceptable photoactivity levels. Moreover, many photocatalytic coating systems teach that heating is required during or after film deposition to achieve acceptable levels of photoactivity.
Known photocatalytic coatings also tend to have properties that are less than ideal for applications in which the coatings are used on windows. As noted above, the visible reflectance of many known photocatalytic coatings is unacceptably high. Moreover, the reflected colors of these coatings tend not to be ideal. Further, some of these coatings have particularly high surface roughness, as they are designed to have large surface areas that facilitate high photoactivity levels. These rough coatings, unfortunately, tend to be quite vulnerable to being abraded. They are also particularly susceptible to taking on and stubbornly retaining dirt and other contaminants, due to their high surface roughness. Finally, with many recent photocatalytic coatings (e.g., those in which complex under-layer systems are used to maximize photoactivity), it is unclear whether these coatings will exhibit the longevity (e.g., in-field durability over time) that is required for number-one-surface coatings.
The present invention provides low-maintenance coatings that offer exceptional durability, exceptional optical properties, reliable production processes, and surprising cleanliness/maintenance properties.
In certain embodiments, the invention provides a low-maintenance coating on a glass sheet. The low-maintenance coating comprises a first film positioned directly over a first major surface of the glass sheet and a second film positioned directly over the first film. In various embodiments of the present invention, the first film includes a thin base film, (e.g. silica) that has a thickness of less than about 300 angstroms, alternatively less than about 150 angstroms, and further alternatively between about 70 angstroms and about 120 angstroms. The second film in various embodiments of the present invention includes a thin photocatalytic film (e.g. titania) that has a thickness of less than about 300 angstroms, alternatively less than about 150 angstroms, and further alternatively between about 30 angstroms and about 120 angstroms.
In other embodiments, the invention provides a method of depositing a low-maintenance coating. The method comprises depositing a low-maintenance coating on a glass sheet by depositing first film directly over a first major surface of the glass sheet and then depositing a second film directly over the first film. In one embodiment of the present invention, the first film comprises silica and is deposited at a thickness of between about 70 angstroms and about 120 angstroms. The second film comprises titania and is deposited at a thickness of between about 30 angstroms and about 120 angstroms. In some of these embodiments, both films are deposited by sputtering, preferably while maintaining the substrate at a low temperature (e.g., less than about 250 degrees Celsius, and preferably less than 200 degrees Celsius).
The following detailed description is to be read with reference to the drawings, in which like elements in different drawings have like reference numerals. The drawings, which are not necessarily to scale, depict selected embodiments and are not intended to limit the scope of the invention. Skilled artisans will recognize that the given examples have many alternatives that fall within the scope of the invention.
In certain embodiments, the invention provides a substrate 10 bearing a low-maintenance coating 40. A variety of substrates are suitable for use in the invention. Preferably, the substrate 10 is a sheet-like substrate having generally or substantially opposed first 12 and second 14 major surfaces. In many embodiments, the substrate is a sheet of transparent material (i.e., a transparent sheet). The substrate, however, is not required to be transparent. For most applications, though, the substrate will comprise a transparent (or at least translucent) material, such as glass or clear plastic. For example, the substrate 10 is a glass sheet (e.g., a window pane) in preferred embodiments. A variety of known glass types can be used, and soda-lime glass is preferred.
Substrates of various sizes can be used in the present invention. Commonly, large-area substrates are used. Certain embodiments involve a substrate 10 having a width of at least about 0.5 meter, preferably at least about 1 meter, perhaps more preferably at least about 1.5 meters (e.g., between about 2 meters and about 4 meters), and in some cases at least about 3 meters.
Substrates of various thicknesses can be used in the present invention. Commonly, substrates (e.g., glass sheets) having a thickness of about 1-5 mm are used. Certain embodiments involve a substrate 10 with a thickness of between about 2.3 mm and about 4.8 mm, and perhaps more preferably between about 2.5 mm and about 4.8 mm. In some cases, a sheet of glass (e.g., soda-lime glass) with a thickness of about 3 mm will be used.
In certain embodiments, the invention provides a substrate 10 bearing a low-maintenance coating 40. The coating 40 is preferably deposited over (e.g., over an entirety of) a major surface 12 of the substrate 10. The low-maintenance coating 40 includes two films: (1) a first film 30 deposited over a major surface 12 of the substrate 10; and (2) a second film 50 deposited over the first film 30.
In various embodiments of the present invention, the first film 30 includes a base film, such as silica (e.g., silicon dioxide), and desirably is deposited directly over the substrate 10 (e.g., directly over a major surface 12 of the substrate). This film preferably consists of, or consists essentially of, silicon dioxide. The silica in the first film 30, however, can include small amounts of an electrically-conductive material, such as aluminum, which may be oxidized in the film 30. For example, this film 30 can be deposited by sputtering a silicon-containing target that includes a small amount of aluminum or another metal that enhances the electrical conductivity of the target. The first film 30 (an entire thickness of which may consist essentially of silica) desirably has (e.g., is deposited at) a physical thickness of less than about 300 angstroms, alternatively less than about 150 angstroms (e.g., between about 40 angstroms and about 150 angstroms), and further alternatively about 70 angstroms and about 120 angstroms. These incredibly small thicknesses facilitate a surprisingly array of exceptional properties in the present coating.
The coating 40 includes a second film 50 that includes a photocatalytic film, such as titania, and desirably is deposited directly over the first film 30. It is noted that one or more photocatalytic materials may be used in embodiments of the present invention including but not limited to oxides of titanium, iron, silver, copper, tungsten, aluminum, zinc, strontium, palladium, gold, platinum, nickel, cobalt and combinations thereof. In preferred embodiments, this film 50 consists of, or consists essentially of, titanium dioxide. In some embodiments though, the second film 50 consists of, or consists essentially of, substoichiometric titanium oxide (TiOx, where x is less than 2). The second film 50 (an entire thickness of which may consist essentially of titania) desirably has (e.g., is deposited at) a physical thickness of less than about 300 angstroms, alternatively less than about 150 angstroms (e.g., between about 30 angstroms and about 150 angstroms), and further alternatively between about 30 angstroms and about 120 angstroms. It has been discovered that the second film 50 when provided at these incredibly small thicknesses, particularly when consisting essentially of titanium oxide and provided in combination with a first film consisting essentially of silicon dioxide at the noted thicknesses, provides unexpected maintenance properties (including exceptional characteristics in terms of taking on limited amounts of dirt and other contaminants and providing easy removal of those contaminants that do accumulate on the coating), while at the same time achieving exceptionally low visible reflection, neutral color, and exceptional durability. Moreover, in preferred embodiments, the second film is a sputtered film deposited at low temperatures (e.g., sputter deposited while maintaining the substrate at less than about 250 degrees Celsius and preferably less than 200 degrees Celsius), and it is especially surprising that a sputtered film of this nature exhibits such exceptional low-maintenance properties.
Certain particular embodiments provide a substrate 10 (e.g., a glass sheet) having a first major surface 12 directly over which is deposited a first film 30 consisting essentially of silica (e.g., SiO2) at a thickness of between about 70 angstroms and about 120 angstroms, wherein a second film 50 consisting essentially of titania (e.g., TiO2) is deposited directly over the first film 30 at a thickness of between about 30 angstroms and about 300 angstroms. In some preferred embodiments of this nature, the first film 30 has a thickness of between about 70 angstroms and about 120 angstroms, perhaps optimally about 100 angstroms, while the second film 50 has a thickness of between about 30 angstroms and about 120 angstroms, perhaps optimally about 100 angstroms.
In a further embodiment, the thickness of the second film 50 is less than 100 angstroms (and optionally less than about 80 angstroms) but greater than about 30 angstroms, while the first film 30 has a thickness of less than about 300 angstroms (and optionally less than about 100 angstroms) but greater than about 30 angstroms. In some cases of this nature, the first film consists essentially of silica while the second film consists essentially of titania.
In the present coating 40, the second film 50 desirably is the outermost film of the coating. Conventional wisdom in the art would suggest that the thin nature of the present coating 40 would not have enough photoactivity to give desirable self-cleaning properties, especially for embodiments where the second film 50 is sputtered, particularly while maintaining the substrate at a low temperature. Surprisingly, though, the present coating is incredibly effective in keeping windows (e.g., monolithic panes or IG units) free of the particular contaminants that build up on windows during the course of routine production. The present coatings also exhibit advantageous water-sheeting properties, while at the same time having exceptional optical properties and durability.
In
With reference to
The invention also provides methods for producing coated substrates. These methods involve depositing a low-maintenance coating 40 (i.e., by depositing each film 30, 50 of any embodiment described above) upon a substrate 10. As noted above, the low-maintenance coating includes two films. These films 30, 50 can be deposited by a variety of well known coating techniques. In certain particularly preferred embodiments, the coating 40 (or at least the second film 50) is deposited by sputtering, preferably at a low temperature (e.g., while maintaining the substrate at below about 250 degrees Celsius, and more preferably below 200 degrees Celsius). However, other coating techniques, such as chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition, and pyrolytic deposition can be used. Various embodiments of the coating 40 have been described, and the present methods involve depositing any of the described coating embodiments by any thin film deposition method, with sputtering being preferred, though not required, for at least the second film 50 and preferably for the whole coating 40.
Sputtering is well known in the present art.
In preferred embodiments, the invention provides methods of producing a coated substrate by sputter depositing onto the substrate each film of any above-described coating embodiment. Preferably, the sputtering of the coating 40 (or at least the sputtering of the second film 50) is carried out while maintaining the substrate at a temperature of less than about 250 degrees Celsius, and more preferably less than 200 degrees Celsius (e.g., without heating the substrate).
In favored methods of the invention, the low-maintenance coating 40 is applied to a substrate 10 in a multiple-chamber sputtering line. Sputtering lines are well known in the present art. A typical sputtering line includes a series of sputtering chambers aligned and connected such that a sheet-like substrate can be passed from one chamber to the next by conveying the substrate horizontally over spaced-apart transport rollers 210 in each of the chambers (the rollers form a continuous path of substrate travel P through the sputtering line). The substrate is typically conveyed at speeds of between about 100-500 inches per minute.
In one particular method, the substrate 10 is positioned at the inlet of the sputtering line and conveyed to a desired coat zone. This coat zone is provided with three cathodes that are adapted to deposit the first film 30. In more detail, each of these cathodes comprises a silicon sputtering target. The silicon targets in this coat zone are sputtered in an oxidizing atmosphere to deposit a silicon dioxide film directly upon the first major surface 12 of the substrate. This atmosphere may consist essentially of oxygen (e.g., about 100% O2). Alternatively, this atmosphere may comprise Ar/O2 (e.g., oxygen and up to about 40% argon). A power of about 38 kW is applied to the first cathode, while a power of about 38 kW is applied to the second cathode, and a power of about 38 kW is applied to the third cathode. The substrate 10 is conveyed beneath all three of these targets at a rate of about 200 inches per minute, while sputtering each of these targets at the noted power level, such that a silicon dioxide film is applied at a thickness of about 100 Å. As noted above, each silicon target may include some aluminum or another material to enhance the conductivity of the target.
The thus coated substrate is then conveyed into a subsequent coat zone. In this zone, three cathodes are used to deposit the second film 50. Each of these three cathodes comprises a titanium sputtering target. The titanium targets in this coat zone are sputtered in an oxidizing atmosphere to deposit a titanium dioxide film directly upon the first film 30. This atmosphere may consist essentially of oxygen. Alternatively, this atmosphere may comprise Ar/O2. A power of about 43 kW is applied to the first cathode, a power of about 43 kW is applied to the second cathode, and a power of about 43 kW is applied to the third cathode. The substrate 10 is conveyed beneath all three of these targets at a rate of about 200 inches per minute, while sputtering each of these targets at the noted power level, such that a titanium dioxide film is applied at a thickness of about 100 Å. This titanium dioxide forms the outermost portion (and is exposed) of the coating 40 in the present embodiment.
In the method just described, it is to be appreciated that the second major surface 14 of the substrate 10 may previously have been, or may subsequently be, coated with an optional low-emissivity coating 80. For instance, the coat zones just described for use in depositing the first 30 and second 50 films can be a sputter-up coat zones located toward the end of a sputtering line that includes a relatively large number of preceding sputter-down coat zones in which the optional low-emissivity coating 80 may have been applied. Particularly useful sputter-up/sputter-down methods and equipment are described in U.S. patent application Ser. No. 09/868,542, the entire contents of which are incorporated herein by reference.
While preferred embodiments of the present invention have been described, it should be understood that numerous changes, adaptations, and modifications can be made therein without departing from the spirit of the invention and the scope of the appended claims.
The present application claims priority to provisional U.S. patent application filed Jul. 12, 2004 and assigned Ser. No. 60/587,210, and provisional U.S. patent application filed Mar. 7, 2005 and assigned Ser. No. 60/659,491, the entire disclosures of which are incorporated herein by reference.
Number | Name | Date | Kind |
---|---|---|---|
1256818 | Nile | Feb 1918 | A |
2780553 | Pawlyk | Feb 1957 | A |
2808351 | Colbert | Oct 1957 | A |
3505092 | Ryan | Apr 1970 | A |
3528906 | Cash, Jr. | Sep 1970 | A |
3679291 | Apfel et al. | Jul 1972 | A |
3727666 | Vander Sluis | Apr 1973 | A |
3829197 | Thelen | Aug 1974 | A |
3840451 | Golyanov | Oct 1974 | A |
3844924 | Cunningham | Oct 1974 | A |
3852098 | Bloss | Dec 1974 | A |
3854796 | Thelen | Dec 1974 | A |
3925182 | Carmichael | Dec 1975 | A |
3934961 | Itoh | Jan 1976 | A |
3968018 | Lane | Jul 1976 | A |
3970037 | Sopko | Jul 1976 | A |
3990784 | Gelber | Nov 1976 | A |
4029566 | Brandmair | Jun 1977 | A |
4045125 | Farges | Aug 1977 | A |
4052520 | Chang | Oct 1977 | A |
4060660 | Carlson | Nov 1977 | A |
4107350 | Berg | Aug 1978 | A |
4130672 | Onoki | Dec 1978 | A |
4166018 | Chapin | Aug 1979 | A |
4194022 | Gillery | Mar 1980 | A |
4212663 | Aslami | Jul 1980 | A |
4212903 | Schnell | Jul 1980 | A |
4214014 | Hofer | Jul 1980 | A |
4216259 | Groth | Aug 1980 | A |
4238276 | Kinugawa | Dec 1980 | A |
4252629 | Bewer | Feb 1981 | A |
4261722 | Novak | Apr 1981 | A |
4322276 | Meckel | Mar 1982 | A |
4332922 | Kossmehl | Jun 1982 | A |
4336119 | Gillery | Jun 1982 | A |
4351861 | Henery | Sep 1982 | A |
4377613 | Gordon | Mar 1983 | A |
4422917 | Hayfield | Dec 1983 | A |
4440822 | Gordon | Apr 1984 | A |
4465575 | Love | Aug 1984 | A |
4466258 | Sando | Aug 1984 | A |
4466877 | McKelvey | Aug 1984 | A |
4485146 | Mizuhashi | Nov 1984 | A |
4486286 | Lewin | Dec 1984 | A |
4503125 | Nelson | Mar 1985 | A |
4504519 | Zelez | Mar 1985 | A |
4568622 | Minami | Feb 1986 | A |
4569738 | Kieser | Feb 1986 | A |
4571350 | Parker | Feb 1986 | A |
4576864 | Krautter | Mar 1986 | A |
4661409 | Kieser | Apr 1987 | A |
4673475 | Windischmann | Jun 1987 | A |
4704339 | Green | Nov 1987 | A |
4713311 | Senske | Dec 1987 | A |
4717622 | Kurokawa | Jan 1988 | A |
4725345 | Sakamoto | Feb 1988 | A |
4728529 | Etzkorn | Mar 1988 | A |
4732454 | Saito | Mar 1988 | A |
4737252 | Hoffman | Apr 1988 | A |
4769291 | Belkind | Sep 1988 | A |
4777090 | Ovshinsky | Oct 1988 | A |
4780334 | Ackerman | Oct 1988 | A |
4798660 | Ermer | Jan 1989 | A |
4814056 | Welty | Mar 1989 | A |
4816127 | Eltouky | Mar 1989 | A |
4849081 | Ross | Jul 1989 | A |
4851095 | Scobey | Jul 1989 | A |
4859493 | Lemelson | Aug 1989 | A |
4861680 | Meyer | Aug 1989 | A |
4882827 | Kusumi | Nov 1989 | A |
4894133 | Hedgcoth | Jan 1990 | A |
4915977 | Okamoto | Apr 1990 | A |
4919778 | Dietrich | Apr 1990 | A |
4931213 | Guajardo | Jun 1990 | A |
4952430 | Bowser | Aug 1990 | A |
4961958 | Desphandey | Oct 1990 | A |
4981568 | Taranko | Jan 1991 | A |
5006248 | Anderson | Apr 1991 | A |
5008002 | Uno | Apr 1991 | A |
5020288 | Swensen | Jun 1991 | A |
5026415 | Yamamoto | Jun 1991 | A |
5032421 | Sarma | Jul 1991 | A |
5035784 | Anderson | Jul 1991 | A |
5047131 | Wolfe | Sep 1991 | A |
5071206 | Hood | Dec 1991 | A |
5073241 | Watanabe | Dec 1991 | A |
5073450 | Nietering | Dec 1991 | A |
5090985 | Soubeyrand | Feb 1992 | A |
5104539 | Anderson | Apr 1992 | A |
5105310 | Dickey | Apr 1992 | A |
5106671 | Amberger | Apr 1992 | A |
5107643 | Swensen | Apr 1992 | A |
5108574 | Kirs | Apr 1992 | A |
5126218 | Clarke | Jun 1992 | A |
RE34035 | Dimigen | Aug 1992 | E |
5139633 | Kashida | Aug 1992 | A |
5165972 | Porter | Nov 1992 | A |
5171414 | Amberger | Dec 1992 | A |
5190807 | Kimock | Mar 1993 | A |
5194990 | Boulos | Mar 1993 | A |
5196400 | Chen | Mar 1993 | A |
5201926 | Szczyrbowski | Apr 1993 | A |
5209996 | Kashida | May 1993 | A |
5211759 | Zimmerman | May 1993 | A |
5245468 | Demiryont | Sep 1993 | A |
5254392 | Burns | Oct 1993 | A |
5284539 | McKernan | Feb 1994 | A |
5286524 | Slutz | Feb 1994 | A |
5302449 | Eby | Apr 1994 | A |
5306547 | Hood | Apr 1994 | A |
5318830 | Takamatsu | Jun 1994 | A |
5338422 | Belkind | Aug 1994 | A |
5342676 | Zagdoun | Aug 1994 | A |
5346600 | Nieh | Sep 1994 | A |
5354446 | Kida | Oct 1994 | A |
5356718 | Athey | Oct 1994 | A |
5366764 | Sunthankar | Nov 1994 | A |
5378527 | Nakanishi | Jan 1995 | A |
5394269 | Takamatsu | Feb 1995 | A |
5401543 | O'Neill | Mar 1995 | A |
5405517 | Lampkin | Apr 1995 | A |
5415756 | Wolfe | May 1995 | A |
5424130 | Nakanishi | Jun 1995 | A |
5453459 | Roberts | Sep 1995 | A |
5470661 | Bailey | Nov 1995 | A |
5476713 | Abiko | Dec 1995 | A |
5482602 | Cooper | Jan 1996 | A |
5498475 | Takigawa | Mar 1996 | A |
5507930 | Yamashita | Apr 1996 | A |
5514485 | Ando | May 1996 | A |
5520996 | Balian | May 1996 | A |
5529631 | Yoshikawa | Jun 1996 | A |
5558751 | Mahler | Sep 1996 | A |
5569362 | Lerbet | Oct 1996 | A |
5569501 | Bailey | Oct 1996 | A |
5589280 | Gibbons | Dec 1996 | A |
5593784 | Chinzi | Jan 1997 | A |
5593786 | Parker | Jan 1997 | A |
5594585 | Komatsu | Jan 1997 | A |
5595813 | Ogawa | Jan 1997 | A |
5595825 | Guiselin | Jan 1997 | A |
5597622 | Zoller | Jan 1997 | A |
5599422 | Adams | Feb 1997 | A |
5605609 | Ando | Feb 1997 | A |
5607723 | Plano et al. | Mar 1997 | A |
5609924 | McCurdy | Mar 1997 | A |
5611899 | Maass | Mar 1997 | A |
5616225 | Sieck | Apr 1997 | A |
5618388 | Seeser | Apr 1997 | A |
5618590 | Naruse | Apr 1997 | A |
5620572 | Bjornard | Apr 1997 | A |
5624423 | Anjur | Apr 1997 | A |
5624760 | Collins | Apr 1997 | A |
5633208 | Ishikawa | May 1997 | A |
5643423 | Kimock | Jul 1997 | A |
5643432 | Qiu | Jul 1997 | A |
5645699 | Sieck | Jul 1997 | A |
5645900 | Ong | Jul 1997 | A |
5669144 | Hahn | Sep 1997 | A |
5674625 | Takahashi | Oct 1997 | A |
5674658 | Burberry | Oct 1997 | A |
5679431 | Chen | Oct 1997 | A |
5683560 | Szczyrbowski | Nov 1997 | A |
5683561 | Hollars | Nov 1997 | A |
5698262 | Soubeyrand | Dec 1997 | A |
5723172 | Sherman | Mar 1998 | A |
5733660 | Makita | Mar 1998 | A |
5733669 | Veyhl | Mar 1998 | A |
5745291 | Jenkinson | Apr 1998 | A |
5755867 | Chikuni | May 1998 | A |
5762674 | Maltby, Jr. | Jun 1998 | A |
5763087 | Falabella | Jun 1998 | A |
5780119 | Dearnaley | Jul 1998 | A |
5780149 | McCurdy | Jul 1998 | A |
5780380 | Endoh | Jul 1998 | A |
5789040 | Martinu | Aug 1998 | A |
5811191 | Neuman | Sep 1998 | A |
5814196 | Hollars | Sep 1998 | A |
5820994 | Gotoh | Oct 1998 | A |
5830252 | Finley | Nov 1998 | A |
5830327 | Kolenkow | Nov 1998 | A |
5830332 | Babich | Nov 1998 | A |
5846613 | Neuville | Dec 1998 | A |
5849200 | Heller | Dec 1998 | A |
5853866 | Watanabe | Dec 1998 | A |
5854708 | Komatsu | Dec 1998 | A |
5866199 | Swidler | Feb 1999 | A |
5866260 | Adams, Jr. | Feb 1999 | A |
5869187 | Nakamura | Feb 1999 | A |
5869808 | Hyllberg | Feb 1999 | A |
5871843 | Yoneda | Feb 1999 | A |
5873203 | Thiel | Feb 1999 | A |
5874701 | Watanabe | Feb 1999 | A |
5888593 | Petrmichl | Mar 1999 | A |
5891556 | Anderson | Apr 1999 | A |
5935716 | McCurdy | Aug 1999 | A |
5939194 | Hashimoto | Aug 1999 | A |
5961843 | Hayakawa | Oct 1999 | A |
5965246 | Guiselin | Oct 1999 | A |
5968328 | Teschner | Oct 1999 | A |
5972184 | Hollars | Oct 1999 | A |
6013372 | Hayakawa | Jan 2000 | A |
6027766 | Greenberg | Feb 2000 | A |
6037289 | Chopin et al. | Mar 2000 | A |
6045903 | Seino | Apr 2000 | A |
6054227 | Greenberg | Apr 2000 | A |
6068914 | Boire | May 2000 | A |
6071606 | Yamazaki | Jun 2000 | A |
6071623 | Sugawara | Jun 2000 | A |
6074981 | Tada | Jun 2000 | A |
6090489 | Hayakawa | Jul 2000 | A |
6103363 | Boire et al. | Aug 2000 | A |
6114043 | Joret | Sep 2000 | A |
6124044 | Swidler | Sep 2000 | A |
6154311 | Simmons, Jr. et al. | Nov 2000 | A |
6156171 | Hollars | Dec 2000 | A |
6156409 | Doushita | Dec 2000 | A |
6165256 | Hayakawa | Dec 2000 | A |
6165598 | Nelson | Dec 2000 | A |
6165616 | Lemelson | Dec 2000 | A |
6171659 | Vanden Brande | Jan 2001 | B1 |
6191062 | Hayakawa | Feb 2001 | B1 |
6193378 | Tonar | Feb 2001 | B1 |
6193856 | Kida | Feb 2001 | B1 |
6197101 | Matsumura | Mar 2001 | B1 |
6210750 | Cho | Apr 2001 | B1 |
6210779 | Watanabe | Apr 2001 | B1 |
6242752 | Soma | Jun 2001 | B1 |
6261693 | Veerasamy | Jul 2001 | B1 |
6270633 | Onaka | Aug 2001 | B1 |
6299981 | Azzopardi | Oct 2001 | B1 |
6319326 | Koh | Nov 2001 | B1 |
6326079 | Philippe et al. | Dec 2001 | B1 |
6333084 | Woodard | Dec 2001 | B1 |
6334938 | Kida | Jan 2002 | B2 |
6350397 | Heikkila | Feb 2002 | B1 |
6352755 | Finley et al. | Mar 2002 | B1 |
6354109 | Boire | Mar 2002 | B1 |
6362121 | Chopin | Mar 2002 | B1 |
6365010 | Hollars | Apr 2002 | B1 |
6379746 | Birch | Apr 2002 | B1 |
6379776 | Tada | Apr 2002 | B1 |
6387844 | Fujishima et al. | May 2002 | B1 |
6403689 | Pickett | Jun 2002 | B1 |
6413581 | Greenberg et al. | Jul 2002 | B1 |
6414213 | Ohmori | Jul 2002 | B2 |
6425670 | Komatsu | Jul 2002 | B1 |
6447123 | Tonar | Sep 2002 | B2 |
6451178 | Szczyrbowski | Sep 2002 | B2 |
6461686 | Vanderstraeten | Oct 2002 | B1 |
6465088 | Talpaert | Oct 2002 | B1 |
6468402 | Vanderstraeten | Oct 2002 | B1 |
6488824 | Hollars | Dec 2002 | B1 |
6511587 | Vanderstraeten | Jan 2003 | B2 |
6570709 | Katayama | May 2003 | B2 |
6635155 | Miyamura | Oct 2003 | B2 |
6660365 | Krisko | Dec 2003 | B1 |
6677063 | Finley | Jan 2004 | B2 |
6679978 | Johnson et al. | Jan 2004 | B2 |
6680135 | Boire et al. | Jan 2004 | B2 |
6682773 | Medwick | Jan 2004 | B2 |
6720066 | Talpaert | Apr 2004 | B2 |
6777091 | Kijima | Aug 2004 | B2 |
6789906 | Tonar | Sep 2004 | B2 |
6800183 | Takahashi | Oct 2004 | B2 |
6818309 | Talpaert | Nov 2004 | B1 |
6829084 | Takaki | Dec 2004 | B2 |
6833089 | Kawahara | Dec 2004 | B1 |
6875319 | Nadaud | Apr 2005 | B2 |
6964731 | Krisko | Nov 2005 | B1 |
20010007715 | Toyoshima | Jul 2001 | A1 |
20010016262 | Toyoshima | Aug 2001 | A1 |
20020014634 | Koyama | Feb 2002 | A1 |
20020155265 | Choi | Oct 2002 | A1 |
20020155299 | Harris | Oct 2002 | A1 |
20030039843 | Johnson | Feb 2003 | A1 |
20030043464 | Dannenberg | Mar 2003 | A1 |
20030064231 | Hurst | Apr 2003 | A1 |
20030143437 | Ohtsu | Jul 2003 | A1 |
20030186089 | Kikuchi | Oct 2003 | A1 |
20030207028 | Boire et al. | Nov 2003 | A1 |
20030235695 | Greenberg | Dec 2003 | A1 |
20040020761 | Thomsen | Feb 2004 | A1 |
20040032655 | Kikuchi | Feb 2004 | A1 |
20040063320 | Hollars | Apr 2004 | A1 |
20040180220 | Gueneau | Sep 2004 | A1 |
20050016835 | Krisko | Jan 2005 | A1 |
20050020444 | Hiraoka | Jan 2005 | A1 |
20050025982 | Krisko | Feb 2005 | A1 |
20050221098 | Azzaopardi | Oct 2005 | A1 |
20050233899 | Anzaki | Oct 2005 | A1 |
20060014050 | Gueneau | Jan 2006 | A1 |
20060051597 | Anzaki | Mar 2006 | A1 |
20060105103 | Hartig | May 2006 | A1 |
20060121315 | Myli | Jun 2006 | A1 |
20070264494 | Krisko et al. | Nov 2007 | A1 |
Number | Date | Country |
---|---|---|
2290999 | May 1998 | CA |
43 13 284 | Oct 1994 | DE |
19736925 | Mar 1998 | DE |
19644752 | Apr 1998 | DE |
19831610 | Jan 1999 | DE |
10100221 | Jul 2001 | DE |
10100223 | Jul 2001 | DE |
0 207 646 | Jan 1987 | EP |
0 470 379 | Feb 1992 | EP |
0 279 550 | Apr 1993 | EP |
0 369 581 | Dec 1993 | EP |
0 590 477 | Apr 1994 | EP |
0 601 928 | Jun 1994 | EP |
0 611 733 | Aug 1994 | EP |
0 515 847 | Feb 1995 | EP |
0 636 702 | Feb 1995 | EP |
0 637 572 | Feb 1995 | EP |
0 639 655 | Feb 1995 | EP |
0 657 562 | Jun 1995 | EP |
0 689 096 | Dec 1995 | EP |
0 689 962 | Jan 1996 | EP |
0 737 513 | Oct 1996 | EP |
0 328 257 | Apr 1997 | EP |
0 787 696 | Aug 1997 | EP |
0 820 967 | Jan 1998 | EP |
0 771 766 | Sep 1998 | EP |
0 753 882 | Nov 1998 | EP |
0 884 288 | Dec 1998 | EP |
0 799 255 | Feb 1999 | EP |
0 901 991 | Mar 1999 | EP |
0 838 535 | Feb 2000 | EP |
0 850 203 | Jan 2001 | EP |
0 850 204 | Dec 2001 | EP |
0 944 557 | Nov 2002 | EP |
1 254 870 | Nov 2002 | EP |
0 737 513 | Sep 2003 | EP |
0 887 104 | Nov 2003 | EP |
1 375 444 | Jan 2004 | EP |
1 411 386 | Apr 2004 | EP |
1 074 525 | Sep 2004 | EP |
1 466 665 | Oct 2004 | EP |
1 500 634 | Jan 2005 | EP |
1 518 836 | Mar 2005 | EP |
1 640 149 | Mar 2006 | EP |
2699164 | Feb 1995 | FR |
2738812 | Mar 1997 | FR |
2738813 | Mar 1997 | FR |
2738836 | Mar 1997 | FR |
2800731 | May 2001 | FR |
2814094 | Mar 2002 | FR |
2838734 | Oct 2003 | FR |
2838735 | Oct 2003 | FR |
2857885 | Jan 2005 | FR |
2861385 | Apr 2005 | FR |
2861386 | Apr 2005 | FR |
2869897 | Nov 2005 | FR |
0232680 | Apr 1925 | GB |
1231280 | May 1971 | GB |
1438462 | Jun 1976 | GB |
2028376 | Mar 1980 | GB |
1595061 | Aug 1981 | GB |
2201428 | Feb 1988 | GB |
2316687 | Aug 1997 | GB |
2327428 | Jul 1998 | GB |
57-140339 | Aug 1982 | JP |
60081048 | May 1985 | JP |
61-091042 | May 1986 | JP |
62-161945 | Jul 1987 | JP |
01-014129 | Jan 1989 | JP |
01-118807 | May 1989 | JP |
3-122274 | May 1991 | JP |
3-187039 | Aug 1991 | JP |
3-193872 | Aug 1991 | JP |
7-149545 | Jun 1995 | JP |
7-215074 | Aug 1995 | JP |
7-233469 | Sep 1995 | JP |
7-508491 | Sep 1995 | JP |
7-315874 | Dec 1995 | JP |
7-315889 | Dec 1995 | JP |
8-011631 | Jan 1996 | JP |
8-012378 | Jan 1996 | JP |
8-109043 | Apr 1996 | JP |
8-134638 | May 1996 | JP |
8-227006 | Sep 1996 | JP |
9-189801 | Jul 1997 | JP |
9-202651 | Aug 1997 | JP |
9-249967 | Sep 1997 | JP |
10-36144 | Feb 1998 | JP |
10-048805 | Feb 1998 | JP |
11-095014 | Apr 1999 | JP |
WO 8706626 | Nov 1987 | WO |
WO 9217621 | Oct 1992 | WO |
WO 9625534 | Aug 1996 | WO |
WO 9703763 | Feb 1997 | WO |
WO 9707066 | Feb 1997 | WO |
WO 9707069 | Feb 1997 | WO |
WO 9708359 | Mar 1997 | WO |
WO 9710185 | Mar 1997 | WO |
WO 9710186 | Mar 1997 | WO |
WO 9711916 | Apr 1997 | WO |
WO 9715499 | May 1997 | WO |
WO 9725201 | Jul 1997 | WO |
WO 9737946 | Oct 1997 | WO |
WO 9742351 | Nov 1997 | WO |
WO 9742357 | Nov 1997 | WO |
WO 9806675 | Feb 1998 | WO |
WO 9823549 | Jun 1998 | WO |
WO 9825700 | Jun 1998 | WO |
WO 0013257 | Mar 2000 | WO |
WO 0037376 | Jun 2000 | WO |
WO 0037377 | Jun 2000 | WO |
WO 0050354 | Aug 2000 | WO |
0075083 | Dec 2000 | WO |
WO 0075087 | Dec 2000 | WO |
WO 0102496 | Jan 2001 | WO |
WO 0132578 | May 2001 | WO |
WO 0171055 | Sep 2001 | WO |
WO 03012540 | Feb 2002 | WO |
WO 02024971 | Mar 2002 | WO |
WO 02085809 | Oct 2002 | WO |
WO 03050056 | Jun 2003 | WO |
WO 03053577 | Jul 2003 | WO |
WO 03072849 | Sep 2003 | WO |
WO 03080530 | Oct 2003 | WO |
WO 03087002 | Oct 2003 | WO |
WO 03087005 | Oct 2003 | WO |
WO 03106732 | Dec 2003 | WO |
2004061151 | Jul 2004 | WO |
WO 2004067464 | Aug 2004 | WO |
WO 2004085701 | Oct 2004 | WO |
WO 2004108619 | Dec 2004 | WO |
WO 2004113064 | Dec 2004 | WO |
WO 2005000758 | Jan 2005 | WO |
WO 2005000759 | Jan 2005 | WO |
WO 2005009914 | Feb 2005 | WO |
WO 2005012593 | Feb 2005 | WO |
WO 2005040056 | May 2005 | WO |
WO 2005040058 | May 2005 | WO |
WO 2005102953 | Nov 2005 | WO |
WO 2005110937 | Nov 2005 | WO |
2006017311 | Feb 2006 | WO |
2006017349 | Feb 2006 | WO |
Number | Date | Country | |
---|---|---|---|
20060057298 A1 | Mar 2006 | US |
Number | Date | Country | |
---|---|---|---|
60587210 | Jul 2004 | US | |
60659491 | Mar 2005 | US |