Information
-
Patent Grant
-
6441593
-
Patent Number
6,441,593
-
Date Filed
Thursday, December 14, 200024 years ago
-
Date Issued
Tuesday, August 27, 200222 years ago
-
Inventors
-
Original Assignees
-
Examiners
Agents
- Maiorana, P.C.; Christopher P.
-
CPC
-
US Classifications
Field of Search
US
- 323 268
- 323 282
- 323 284
- 323 285
- 323 286
- 327 536
- 327 530
- 365 226
-
International Classifications
-
Abstract
An apparatus comprising a first device and a second device. The first device may be connected to a first supply voltage. The second device may be connected (i) in series with the first device and (ii) to a second supply voltage. The first device is generally biased to provide enhanced noise suppression performance. The second device is generally configured to switch between the first and second supply voltages.
Description
FIELD OF THE INVENTION
The present invention relates to a method and/or architecture for implementing a regulator device generally and, more particularly, to a method and/or architecture for implementing a low noise switching regulator.
BACKGROUND OF THE INVENTION
Several conventional approaches for implementing regulator circuits have been developed. Regulator circuits connect one supply voltage (e.g., an external supply voltage) with another voltage (e.g., an internal supply voltage). Referring to
FIG. 1
, a circuit
10
implementing one such conventional approach is shown. The circuit
10
may be easily implemented and is area efficient. However, the circuit
10
has the disadvantages of a large voltage overshoot when operating with a high external supply voltage VPWRI. As large currents build up (as in the case of high external supply voltages), the ohmic drop (i.e., IRDROP) across the resistance R limits the gate drive of the switch S, reducing the total current. The reduction of current may not be sufficient and may result in higher overshoot. The resistor R is chosen such that little impact occurs to performance at a low operating range of the internal supply voltage VPWR.
In the circuit
10
, the series resistance R is sized such that a low external power supply voltage (VPWRI) does not compromise the internal voltage (VPWR) under high current conditions. For low external supply voltages, the current drop (IRDROP) due to the series resistance R is not significant. At higher external voltages, when the switch S turns on in response to a load condition, a sudden current can flow tending to equalize the internal supply voltage to the external supply voltage. The current flow causes an ohmic voltage drop across the resistor R.
The increased ohmic drop lowers the gate to source voltage VGS seen by the switch S. In the absence of the resistor R, the switch S can see all the gate to source voltage VGS from the external supply VPWRI to the ground. With the series source resistance, the switch S has a lower gate to source drive which operates at a lower current. Operating at a lower current does not compromise performance on a lower power supply voltage but can reduce peaking current at higher power supply voltage. A wide voltage range is generally undesirable with the circuit
10
but may be suitable for some applications.
Referring to
FIG. 2
, a circuit
20
of another conventional approach for implementing a regulator is shown. The circuit
20
uses a current source I in series with the PMOS switch S. The circuit
20
may have better, but still limited, performance compared with the circuit
10
. A large de-coupling capacitor Cl is implemented to suppress a coupling effect of the circuit
20
. The circuit
20
has the disadvantage of requiring a large die area. The circuit
20
also consumes DC current, which is generally undesirable.
Consider the circuit
20
, for example, when 100 mA is required. The internal supply voltage VPWR must be at a certain voltage. The current source must handle the current regardless of the external voltage VPWRI. Even if the external voltage VPWRI were to change between a normal 2.3 volts to a higher 3.7 volts, the current source still must provide the same current through the biased PMOS series device.
A disadvantage of the conventional implementation
20
is that the bias that controls the current source is affected by the transient response of the switch S. The effect is partially in response to the gate of the current source in series with switch S being modulated by the transient. A large capacitance can be added to power or ground to decouple the gate for minimum modulation on the gate. Reducing the modulation can provide a constant current through the switch S. Thus, the additional capacitance is effective in controlling the current.
As the external supply voltage VPWR increases the current is still limited by the current source. A typical approach for implementing a large current source is by mirroring the bias voltage from a smaller device supporting a small current. During a transient event (i.e., turn ON or OFF of the switch S), the drain of the current limiting device (N*W) drops and capacitively couples the capacitor C
2
to the mirror bias voltage. Such capacitive coupling has the undesirable effect of making the current source go into overdrive, resulting in large currents. A large decoupling capacitance C
1
may be used to lower the effect of coupling. An alternative solution is to provide a coupling effect that is equal and opposite in direction, to produce a net zero charge transferred to the bias node. The circuit
20
is costly to implement, requires significant die area, and has increased design complexity.
The conventional circuits
10
and
20
have disadvantages that include (i) large voltage overshoot on a regulated voltage supply, (ii) large di/dt noise which affects circuit performance, (iii) considerable cost and/or (iv) a large die area impact.
SUMMARY OF THE INVENTION
The present invention concerns an apparatus comprising a first device and a second device. The first device may be connected to a first supply voltage. The second device may be connected (i) in series with the first device and (ii) to a second supply voltage. The first device is generally biased to provide enhanced noise suppression performance. The second device is generally configured to switch between the first and second supply voltages.
The objects, features and advantages of the present invention include providing a method and/or architecture for implementing a low noise switching regulator that may (i) have excellent noise suppression; (ii) deliver optimal performance; (iii) provide an open loop regulator in series with a switching regulator to provide enhanced noise performance; (iv) provide an open loop regulator including a native (or depletion) device; (v) provide a low noise switching regulator; and/or (vi) reduce voltage ranges of an internal regulator switch.
BRIEF DESCRIPTION OF THE DRAWINGS
These and other objects, features and advantages of the present invention will be apparent from the following detailed description and the appended claims and drawings in which:
FIG. 1
is a diagram of a conventional switching regulator;
FIG. 2
is a diagram of another conventional switching regulator;
FIG. 3
is a block diagram of a preferred embodiment of the present invention;
FIG. 4
is a diagram of a portion of the circuit of
FIG. 5
;
FIG. 5
is a detailed block diagram of the bias circuit of
FIG. 3
;
FIGS. 6 and 7
are alternate methods of bias generation;
FIGS.
8
(
a-b
) are timing diagrams illustrating an operation of the present invention compared with conventional approaches all operating under low supply voltage condition;
FIGS.
9
(
a-b
) are timing diagrams illustrating an operation of the present invention compared with conventional approaches (i.e., where the circuit
20
does not have a decoupling capacitor on the bias node) under high supply voltage conditions; and
FIGS.
10
(
a-b
) are timing diagrams illustrating an operation of the present invention compared with conventional approaches (i.e., where the circuit
20
has a decoupling capacitor on the bias node) under high supply voltage conditions.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
Referring to
FIG. 3
, a block diagram of a circuit
100
is shown in accordance with a preferred embodiment of the present invention. The circuit
100
generally comprises a circuit
102
, a circuit
104
and a circuit
106
. The circuit
102
may be implemented, in one example, as a comparator circuit. The comparator
102
may be a switching regulator comparator circuit. The circuit
104
may be implemented, in one example, as a switch circuit in series with an open loop regulator circuit (to be described in more detail in connection with FIG.
4
). The circuit
106
may be implemented, in one example, as a bias circuit. The switch circuit
104
may be connected to both an external voltage supply (e.g., V_EXT) and an internal voltage supply (e.g., V_INT). The bias circuit
106
may present a signal (e.g., BIAS) to the circuit
104
. The comparator circuit
102
may present a control signal (e.g., CTR) to the switch
104
. The signal CTR may be generated in response to the internal supply V_INT and a reference signal (e.g., REF).
The circuit
100
may lower the noise generated by the switch
104
during transient periods (e.g., turning ON and OFF). One design concern when implementing a wide voltage range switching regulator is that such designs may need to meet a certain performance at a low end of an operating range of the supply voltage. However, when operating at the high end of the operating range of the supply voltage, the resistance of the switch
104
is significantly lowered. In such a case, without the present invention, the switch
104
may become a significant noise source on the package (or integrated circuit) as discussed in the background section. The circuit
100
generally reduces the noise generated by the switch
104
when operating at high operating supply voltages.
Referring to
FIG. 4
, a schematic diagram of the switch
104
is shown. The switch
104
generally comprises a device
110
and a device
112
. The device
110
may have a gate that receives the signal BIAS. The device
112
may have a gate that receives the signal CTR. A first source/drain of the device
110
may be connected to the supply voltage V_EXT. A second source/drain of the device
110
may be connected to a first source/drain of the device
112
. The second source/drain of the device
112
may be connected to the supply voltage V_INT. A voltage (e.g., VGS) may be generated between the first source/drain and the gate of the device
112
.
The device
110
may be implemented, in one example, as a native device. A native device may be a device where the threshold voltage (e.g., Vt) may be zero, or near zero. While such native devices may be difficult to control (e.g., turn off) in certain applications, native devices can be used in the context of the present invention to provide increased voltage protection. However, the present invention is not limited to implementing the device
110
as a native device.
The device
110
is inserted in series with the source of the PMOS device
112
. The voltage signal BIAS is generated to be lower than the maximum external voltage V_EXT. The signal BIAS is presented to the gate of the device
110
to limit the total voltage range received by the switch
104
. When the switch
104
sees a lower voltage (relative to the external supply voltage V_EXT), the total di/dt noise that is generated is lowered. The device
110
and the value of the voltage signal BIAS may be selected such that the performance is not compromised at the low end of the external supply voltage V_EXT.
The resistance of the device
110
may be altered dynamically (e.g., non-linearly) as a function of the external supply voltage V_EXT. The resistance of the device
110
is generally controlled by the voltage BIAS. For example, the smaller the voltage signal BIAS, the larger the resistance of the device
110
. A simple resistor (such as in the circuit
10
of
FIG. 2
) cannot realize such a property. Therefore, the circuit
100
is superior to the technique of the circuit
10
of FIG.
1
.
Referring to
FIG. 5
, an example of the bias circuit
106
is shown. The circuit
106
generally comprises a charge pump
120
, a reference circuit
122
and a comparator circuit
124
. The reference circuit
122
may be implemented as a bandgap reference circuit. However, other reference circuits may be implemented accordingly to meet the design criteria of a particular implementation. The charge pump circuit
120
may be implemented to generate the signal BIAS of a voltage level higher than the low end of the external supply voltage V_EXT. Since the gate bias on the native device is constant, for high external voltages the device saturates and provides a constant current rather than large surge current which causes noise.
The circuit
106
may illustrate a preferred implementation of a bias circuit. The key to lowering the switching noise of the switch
104
is to place a series element (e.g., the device
110
) to reduce current under high voltage conditions. A source follower NMOS or native device receiving a fixed gate bias may serve as a good current limiter.
The requirement for the bias voltage BIAS for wide external supply voltage range may be implemented such that, at low external supply voltages, the series device
110
should have a low resistance so that the performance is not compromised. In order to meet this requirement, the bias voltage BIAS may be higher than the available supply voltage on the low side of the range. Therefore, a charge pump may become necessary. If adequate external supply voltage is available, the various schemes (such as those to be described in connection with
FIGS. 6 and 7
) may be implemented.
The bandgap reference circuit
122
generally provides a fixed reference to the comparator
124
. The comparator
124
may enable the charge pump
120
to charge up a bias node until a desired value for the signal BIAS is achieved. The value BIAS is generally set by the desired resistance of the native device
110
under low supply voltage conditions. Once the desired value is reached, the charge pump
120
is disabled and the value BIAS is left floating on the gate of the native device
110
. Additional circuitry (not shown) is used to ensure that the value BIAS does not drift above or below the desired value.
Referring to
FIG. 6
, a circuit
106
′ implementing an alternate bias scheme is shown. The circuit
106
′ may have similar function to the circuit
106
. The circuit
106
′ generally comprises a resistor
130
and a number of MOS diodes
132
a
-
132
n
coupled in a series configuration. The resistor
130
and the switches
132
a
-
132
n
may be configured to generate the voltage signal BIAS. The circuit
106
′ may provide a simplistic bias circuit. However, the circuit
106
′ may have a poor supply rejection. The circuit
106
′ may also require a high external supply voltage.
Referring to
FIG. 7
, a circuit
106
″ implementing another alternate bias scheme is shown. The circuit
106
″ generally comprises an OPAMP
124
″ and a bandgap reference circuit
122
″. The OPAMP
124
″ may be designed for a small transient requirement and low supply rejection properties. However, the circuit
106
″ may require a high external supply voltage to properly operate.
Referring to FIGS.
8
(
a-b
) , performance of the circuit
100
compared with the circuits
10
and
20
, while operating at a minimum external supply voltage is shown.
FIG. 8
a
illustrates an internal supply voltage
200
of the circuit
100
,
202
of the circuit
10
and
204
of the circuit
20
at a minimum external supply voltage.
FIG. 8
b
illustrates the associated switching currents
210
of the circuit
100
,
212
of the circuit
10
and
214
of the circuit
20
. The average internal voltage is similar for all three schemes.
Referring to FIGS.
9
(
a-b
), performance of the circuit
100
compared to the circuit
10
and the circuit
20
, while operating at a maximum external supply voltage is shown.
FIG. 9
a
illustrates an internal supply voltage
220
of the circuit
100
,
222
of the circuit
10
and
224
of the circuit
20
at a high external supply voltage.
FIG. 9
b
illustrates the associated switching currents
230
of the circuit
100
,
232
of the circuit
10
and
234
of the circuit
20
. The average current consumed by the circuit
100
shows an improvement over the circuits
10
and
20
(where the circuit
20
does not have the decoupling capacitor). The circuit
20
and the circuit
10
behave similarly without the decoupling capacitor on the circuit
20
.
Referring to FIGS.
10
(
a-b
), performance of the circuit
100
compared to the circuit
10
and the circuit
20
, at a maximum external supply voltage is shown.
FIG. 10
a
illustrates the internal supply voltage
240
of the circuit
100
,
242
of the circuit
10
and
244
of the circuit
20
of a maximum external supply voltage.
FIG. 10
b
illustrates the associated switching current
250
of the circuit
100
,
252
of the circuit
10
and
254
of the circuit
20
(where the circuit
20
has the decoupling capacitor). The circuit
20
looks closer to the circuit
100
, but the area penalty is large.
The circuit
100
may provide an improved noise performance (e.g., reducing the overall switching noise) while maintaining a relative ease of implementation. The circuit
100
may be particularly valuable in designs implemented with analog circuitry where noise should be kept to a minimum.
While the invention has been particularly shown and described with reference to the preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made without departing from the spirit and scope of the invention.
Claims
- 1. An apparatus comprising:a first device connected to a first supply voltage; and a second device connected in series between said first device and a second supply voltage, wherein said first device is biased to provide enhanced noise suppression performance and said second device is configured to switch between said first and second supply voltages in response to said second supply voltage and a reference signal.
- 2. The apparatus according to claim 1, wherein a resistance of said first device is dynamically altered in response to an externally generated bias signal.
- 3. The apparatus according to claim 1, wherein a resistance of said first device is dynamically altered as a function of said first voltage supply.
- 4. The apparatus according to claim 1, wherein said first device is configured in response to a bias signal, wherein said bias signal comprises a voltage level lower than a maximum voltage level of said first supply voltage.
- 5. The apparatus according to claim 4, wherein said bias signal is presented to a gate of said first device to limit a total voltage range received by said second device.
- 6. The apparatus according to claim 5, wherein said second device is configured to generate lower noise in response to said limited total voltage range, wherein said limited total voltage range comprises a lower voltage than said first supply voltage range.
- 7. The apparatus according to claim 3, wherein said first device and said bias signal are configured such that a performance of said apparatus is not compromised at a low end of an operating range of said first supply voltage.
- 8. The apparatus according to claim 1, wherein said first device comprises an open loop regulator.
- 9. The apparatus according to claim 1, wherein said second device comprises a switching regulator.
- 10. The apparatus according to claim 1, wherein said first device is implemented as a native device or a depletion device.
- 11. The apparatus according to claim 1, wherein said apparatus comprises a low noise switching regulator.
- 12. The apparatus according to claim 1, wherein said first device is biased in response to a bias generator circuit.
- 13. An apparatus comprising:means for connecting a first device to a first supply voltage and connecting a second device in series between said first device and a second supply voltage; and means for biasing said first device to provide enhanced noise suppression performance and said second device is configured to switch between said first and second supply voltages in response to said second supply voltage and a reference signal.
- 14. A method for providing a low noise switching regulator, comprising the steps of:(A) connecting a first device to a first supply voltage; (B) connecting a second device in series between said first device and a second supply voltage; and (C) biasing said first device to provide enhanced noise suppression performance when said second device is configured to switch between said first and second supply voltages in response to said second supply voltage and a reference signal.
- 15. The method according to claim 14, wherein step (C) further comprises:dynamically altering a resistance of said first device in response to an externally generated bias signal.
- 16. The method according to claim 14, wherein step (C) further comprises:dynamically altering a resistance of said first device as a function of said first voltage supply.
- 17. The method according to claim 14, wherein step (C) further is further responsive to a bias signal, wherein said bias signal comprises a voltage level lower than a maximum voltage level of said first supply voltage.
- 18. The method according to claim 17, wherein step (C) further comprises:limiting a total voltage range received by said second device by presenting said bias signal to a gate of said first device.
- 19. The method according to claim 18, wherein step (C) further comprises:generating lower noise with said second device in response to said limited total voltage range, wherein said limited total voltage range comprises a lower voltage than said first supply voltage range.
- 20. The method according to claim 14, wherein step (C) further comprises:biasing said first device such that a performance of said low noise switching regulator is not compromised at a low end of an operating range of said first supply voltage.
- 21. An apparatus comprising:a first device connected to a first supply voltage, wherein said first device comprises a native device biased to provide enhanced noise suppression performance; and a second device connected in series between said first device and a second supply voltage, wherein said second device is configured to switch between said first and second supply voltages.
US Referenced Citations (8)