Patent Grant
12142851
Conventional systems utilize antennas to transmit/receive signals to/from their environment for communication systems (i.e., data link, telemetry, flight termination, global positioning system (GPS)). Some systems have constrained internal space for communications systems including antennas (whose size depends on an operating frequency band).
In accordance with the concepts described herein, exemplary low-profile, circularly-polarized antenna devices and methods provide antennas capable of conforming to systems with low profiles such that the antennas are not invasive to a payload volume.
In accordance with the concepts described herein, exemplary low-profile, circularly-polarized antenna devices and methods provide a radome material to protect an antenna element and one or more parasitic patches from an environment (e.g., temperature, corrosion, etc.).
In accordance with the concepts described herein, exemplary low-profile, circularly-polarized antenna devices and methods provide a patch antenna element residing under one or more parasitic patches.
In accordance with the concepts described herein, exemplary low-profile, circularly-polarized antenna devices and methods provide two microstrip feed lines residing below a patch antenna element.
In accordance with the concepts described herein, exemplary low-profile, circularly-polarized antenna devices and methods provide a power divider (e.g., combiner) with an approximately +/−90 degree phase line with two outputs connected to two microstrip feed lines.
In accordance with the concepts described herein, exemplary low-profile, circularly-polarized antenna devices and methods provide an air gap residing below a patch antenna element.
In accordance with the concepts described herein, exemplary low-profile, circularly-polarized antenna devices and methods provide an electrical ground plane residing below microstrip feed lines.
The manner and process of making and using the disclosed embodiments may be appreciated by reference to the figures of the accompanying drawings. It should be appreciated that the components and structures illustrated in the figures are not necessarily to scale, emphasis instead being placed upon illustrating the principals of the concepts described herein. Like reference numerals designate corresponding parts throughout the different views. Furthermore, embodiments are illustrated by way of example and not limitation in the figures, in which:
The present disclosure provides exemplary low-profile, light-weight, conformal, and circularly-polarized antenna devices and methods.
In an exemplary embodiment, low-profile, circularly-polarized antenna devices and methods use a proximity coupled feed line to simplify fabrication (e.g., no vias), reduce manufacturing costs (e.g., no vias), eliminate a point of failure while conformed (e.g., due to stressed vias), and increase bandwidth due to improved component matching.
In an exemplary embodiment, low-profile, circularly-polarized antenna devices and methods include an air cavity below an antenna element to improve antenna gain and bandwidth. In an exemplary embodiment, low-profile, circularly-polarized antenna devices and methods include parasitic patches electrically coupled to, and residing above, an antenna element to improve antenna bandwidth.
In an exemplary embodiment, low-profile, circularly-polarized antenna devices and methods include two phase-shifted feed lines to induce circular polarization. In an exemplary embodiment, low-profile, circularly-polarized antenna devices and methods, a proximity coupled patch is employed in conformal applications to get better bandwidth, easier fabrication, and better operation on conformal surfaces as compared to antennas that include vias. In an exemplary embodiment, low-profile, circularly-polarized antenna devices and methods include a proximity coupled patch with two feed lines for circular polarization, with a cavity below the patch for improved gain/bandwidth, with parasitic patches for further improved bandwidth, where either dielectric materials or magnetic materials are used. A low-profile, circularly-polarized antenna device and method using magnetic materials greatly reduce the size for lower frequency applications.
In an exemplary embodiment, low-profile, circularly-polarized antenna devices and methods, dielectric materials may have thicknesses 00 mil. In an exemplary embodiment, the dielectric material may be clad in a conductive material (e.g., copper) on either one side or both sides. In an exemplary embodiment, copper may be pressed to a dielectric material using pressure and heat. In an exemplary embodiment, a thickness of copper may be controlled to either ½ oz (17 mil), 1 oz (34 mil), or 2 oz (68 mil). For most applications 1/2 oz copper is sufficient, but in some higher power applications 1 oz or 2 oz is used.
In the exemplary embodiment, the signal processor 105 comprises a bidirectional input/output connected to the transceiver 107. The transceiver 107 comprises a first bidirectional input/output connected to the signal processor 105 and a second bidirectional input/output connected to the RF front-end 109. The RF front-end 109 comprises a first bidirectional input/output connected to the transceiver 107 and a second bidirectional input/output connected to the at least one antenna 111. The at least one antenna 111 comprises a bidirectional input/output connected to the RF front-end 109.
In the exemplary embodiment, the radome 201 is formed from a first dielectric material. The at least one parasitic patch element 209 is formed on a second dielectric layer below the first dielectric material.
The patch antenna element 207 is formed on a top side of a third dielectric material and below the at least one parasitic patch element 209. The microstrip feed line 203 is formed on a bottom side of the third dielectric material and below the patch antenna element 207. The power divider 205 is formed on the bottom side of the third dielectric material and is configured to divide the microstrip feed line 203 into two microstrip feed lines that are approximately ±90 degrees out of phase with each other and proximity-coupled to the patch antenna element 207 to circularly-polarize the patch antenna element 207. In an exemplary embodiment, the power divider 205 may be a T-junction power divider, a Wilkinson power divider, or a ±90 degree hybrid coupler.
The at least one air cavity 211 is formed in a fourth dielectric material below the patch antenna element 207.
In
The first dielectric material forms the radome 201. The second dielectric material 1001 is below the first dielectric material and has the at least one parasitic patch element 209 formed thereon. The third dielectric material 1003 is below the second dielectric material 1001 and has the patch antenna element 207 formed on a top side of the third dielectric material 1003 and has the microstrip feed line 203 and the power divider 205 formed on a bottom side of the third dielectric material 1003. The fourth dielectric material 1005 is below the third dielectric material 1003 and has the at least one air cavity 211 formed therein and below the patch antenna element 207. The firth dielectric material 1007 is below the fourth dielectric material 1005 and has the electrical ground plane 213 formed on a bottom side of the fifth dielectric material 1007.
The low-profile, circularly polarized antenna 200 may be fabricated utilizing existing conventional PCB processes, semiconductor processes, or 3D printing processes. Dielectric material (e.g., dielectric substrates) are commercially available with electroplated (or rolled) conductive material (e.g., copper) on one or both sides. In conventional PCB processes the conductive material may be selectively removed using wet etching, milling, or laser etching. The at least one air gap 211 may be formed by laser etching the fourth dielectric material 1005. The first through fifth dielectric materials 201, 1001, 1003, 1005, and 1007 in a PCB process are aligned and bonded with adhesive films to produce the low-profile, circularly-polarized antenna 200.
Step 1103 of the method 1100 comprises forming at least one parasitic patch on a top side of a second dielectric layer. Step 1105 comprises forming a patch antenna on a top side of a third dielectric layer. Step 1107 comprises forming a microstrip feed line and a power divider on a bottom side of the third dielectric layer, where the power divider divides the microstrip feed line into two microstrip feed lines that are approximately ±90 degrees out of phase with each other and proximity-coupled to the patch antenna to circularly-polarize the patch antenna. Step 1109 comprises etching at least one air cavity in a fourth dielectric layer, where the at least one air gap is below the patch antenna. Step 1111 comprises forming an electrical ground plane on a bottom side of a fifth dielectric layer. Step 1113 comprises bonding the first through fifth dielectric layers together when a PCB process is used. Step 1113 is not necessary when a semiconductor process or a 3D printing process is used since these processes inherently bond the dielectric layers together during processing.
The first dielectric material 1201 forms the radome. The second dielectric material 1203 is below the first dielectric material 1201 and has the patch antenna element 1205 formed on a top side of the second dielectric material 1203 and has the microstrip feed line and the power divider 1207 formed on a bottom side of the second dielectric material 1203. The third dielectric material 1209 is below the second dielectric material 1203 and has the at least one air cavity 1211 formed therein and below the patch antenna element 1205. The fourth dielectric material 1213 is below the third dielectric material 1209 and has the electrical ground plane 1215 formed on a bottom side of the fourth dielectric material 1213.
The low-profile, circularly polarized antenna 1200 may be fabricated utilizing existing conventional PCB processes, semiconductor processes, or 3D printing processes. Dielectric material (e.g., dielectric substrates) are commercially available with electroplated (or rolled) conductive material (e.g., copper) on one or both sides. In conventional PCB processes the conductive material may be selectively removed using wet etching, milling, or laser etching. The at least one air gap 1211 may be formed by laser etching the third dielectric material 1209. The first through fourth dielectric materials 1201, 1203, 1209, and 1213 in a PCB process are aligned and bonded with adhesive films to produce the low-profile, circularly-polarized antenna 1200. The adhesive film is not necessary when a semiconductor process or a 3D process is used since these processes inherently bond dielectric layers together.
Step 1303 comprises forming a patch antenna on a top side of a second dielectric layer. Step 1305 comprises forming a microstrip feed line and a power divider on a bottom side of the second dielectric layer, where the power divider divides the microstrip feed line into two microstrip feed lines that are approximately ±90 degrees out of phase with each other and proximity-coupled to the patch antenna to circularly-polarize the patch antenna. Step 1307 comprises etching at least one air cavity in a third dielectric layer, where the at least one air gap is below the patch antenna. Step 1309 comprises forming an electrical ground plane on a bottom side of a fourth dielectric layer. Step 1311 comprises bonding the first through fourth dielectric layers together when a PCB process is used. Step 1311 is not necessary when a semiconductor process or a 3D printing process is used since these processes inherently bond the dielectric layers together during processing.
In the exemplary embodiment, the radome 1401 is formed from a first dielectric material. The patch antenna element 1403 is formed on a top side of a second dielectric material and below the first dielectric material. The first microstrip feed line 1405 is formed on a bottom side of the second dielectric material and below the patch antenna element 1403. The second microstrip feed line 1407 is formed on the bottom side of the second dielectric material and below the patch antenna element 1403. The at least one air cavity 1409 is formed in a third dielectric material below the patch antenna element 1403. The electrical ground plane 1411 is formed at a bottom of a fourth dielectric material below the third dielectric material. The ±90 degree hybrid coupler 1413 is external to the radome 1401 and has a first input for receiving an electrical signal, a first output connected to the first microstrip feed line 1405 at a first phase, and a second output connected to the second microstrip feed line 1407 at a phase that is approximately ±90 degree from the phase of the first output, where the first microstrip feed line 1405 and the second microstrip feed line 1407 are proximity-coupled to the patch antenna element 1403 to circularly-polarize the patch antenna element 1403.
In the exemplary embodiment, the radome 1501 is formed from a first dielectric material. The at least one parasitic patch element 1503 is formed on a second dielectric layer below the first dielectric material.
The additive process may use methods that comprise 3D printing and thin-film deposition, which is used in semiconductor fabrication, where thin-film deposition may be achieved by chemical deposition or physical deposition. Chemical deposition may include chemical vapor deposition, plasma enhanced chemical vapor deposition, atomic layer deposition, molecular layer deposition, and so on. Physical deposition may include physical vapor deposition, thermal evaporation, sputtering deposition, and so on. The additive process may use materials comprising electrically insulating materials (e.g., acrylonitrile, butadiene styrene (ABS), polylactic acid (PLA), high impact polystyrene (HIPS), thermoplastic polyurethane (TPU), etc. and semiconductor materials including Silicon, Germanium, Gallium Arsenide, Gallium Nitride, Silicon Carbide, etc.) or electrically conductive materials (e.g., silver-based conductive ink, copper-based conductive ink, platinum-based conductive ink etc. and semiconductor materials including Gold, Titanium, Silver, Copper, Aluminum, Platinum, etc.).
Having described exemplary embodiments of the disclosure, it will now become apparent to one of ordinary skill in the art that other embodiments incorporating their concepts may also be used. The embodiments contained herein should not be limited to disclosed embodiments but rather should be limited only by the spirit and scope of the appended claims. All publications and references cited herein are expressly incorporated herein by reference in their entirety.
Elements of different embodiments described herein may be combined to form other embodiments not specifically set forth above. Various elements, which are described in the context of a single embodiment, may also be provided separately or in any suitable sub combination. Other embodiments not specifically described herein are also within the scope of the following claims.
Various embodiments of the concepts, systems, devices, structures and techniques sought to be protected are described herein with reference to the related drawings. As noted above, in embodiments, the concepts and features described herein may be embodied in a digital multi-beam beamforming system. Alternative embodiments can be devised without departing from the scope of the concepts, systems, devices, structures and techniques described herein.
It is noted that various connections and positional relationships (e.g., over, below, adjacent, etc.) are set forth between elements in the above description and in the drawings. These connections and/or positional relationships, unless specified otherwise, can be direct or indirect, and the described concepts, systems, devices, structures and techniques are not intended to be limiting in this respect. Accordingly, a coupling of entities can refer to either a direct or an indirect coupling, and a positional relationship between entities can be a direct or indirect positional relationship.
As an example of an indirect positional relationship, references in the present description to forming layer “A” over layer “B” include situations in which one or more intermediate layers (e.g., layer “C”) is between layer “A” and layer “B” as long as the relevant characteristics and functionalities of layer “A” and layer “B” are not substantially changed by the intermediate layer(s). The following definitions and abbreviations are to be used for the interpretation of the claims and the specification. As used herein, the terms “comprises,” “comprising, “includes,” “including,” “has,” “having,” “contains” or “containing,” or any other variation thereof, are intended to cover a non-exclusive inclusion. For example, a composition, a mixture, process, method, article, or apparatus that comprises a list of elements is not necessarily limited to only those elements but can include other elements not expressly listed or inherent to such composition, mixture, process, method, article, or apparatus.
Additionally, the term “exemplary” is used herein to mean “serving as an example, instance, or illustration. Any embodiment or design described herein as “exemplary” is not necessarily to be construed as preferred or advantageous over other embodiments or designs. The terms “one or more” and “one or more” are understood to include any integer number greater than or equal to one, i.e., one, two, three, four, etc. The terms “a plurality” are understood to include any integer number greater than or equal to two, i.e., two, three, four, five, etc. The term “connection” can include an indirect “connection” and a direct “connection”.
References in the specification to “one embodiment, “an embodiment,” “an example embodiment,” etc., indicate that the embodiment described can include a particular feature, structure, or characteristic, but every embodiment can include the particular feature, structure, or characteristic. Moreover, such phrases are not necessarily referring to the same embodiment. Further, when a particular feature, structure, or characteristic is described in connection with an embodiment, it is submitted that it is within the knowledge of one skilled in the art to affect such feature, structure, or characteristic in connection with other embodiments whether or not explicitly described.
For purposes of the description herein, terms such as “upper,” “lower,” “right,” “left,” “vertical,” “horizontal, “top,” “bottom,” (to name but a few examples) and derivatives thereof shall relate to the described structures and methods, as oriented in the drawing figures. The terms “overlying,” “atop,” “on top, “positioned on” or “positioned atop” mean that a first element, such as a first structure, is present on a second element, such as a second structure, where intervening elements such as an interface structure can be present between the first element and the second element. The term “direct contact” means that a first element, such as a first structure, and a second element, such as a second structure, are connected without any intermediary elements. Such terms are sometimes referred to as directional or positional terms.
Use of ordinal terms such as “first,” “second,” “third,” etc., in the claims to modify a claim element does not by itself connote any priority, precedence, or order of one claim element over another or the temporal order in which acts of a method are performed, but are used merely as labels to distinguish one claim element having a certain name from another element having a same name (but for use of the ordinal term) to distinguish the claim elements.
The terms “approximately” and “about” may be used to mean within ±20% of a target value in some embodiments, within ±10% of a target value in some embodiments, within ±5% of a target value in some embodiments, and yet within ±2% of a target value in some embodiments. The terms “approximately” and “about” may include the target value. The term “substantially equal” may be used to refer to values that are within ±20% of one another in some embodiments, within ±10% of one another in some embodiments, within ±5% of one another in some embodiments, and yet within ±2% of one another in some embodiments.
The term “substantially” may be used to refer to values that are within ±20% of a comparative measure in some embodiments, within ±10% in some embodiments, within ±5% in some embodiments, and yet within ±2% in some embodiments. For example, a first direction that is “substantially” perpendicular to a second direction may refer to a first direction that is within ±20% of making a 90° angle with the second direction in some embodiments, within ±10% of making a 90° angle with the second direction in some embodiments, within ±5% of making a 90° angle with the second direction in some embodiments, and yet within ±2% of making a 90° angle with the second direction in some embodiments.
It is to be understood that the disclosed subject matter is not limited in its application to the details of construction and to the arrangements of the components set forth in the following description or illustrated in the drawings. The disclosed subject matter is capable of other embodiments and of being practiced and carried out in various ways.
Also, it is to be understood that the phraseology and terminology employed herein are for the purpose of description and should not be regarded as limiting. As such, those skilled in the art will appreciate that the conception, upon which this disclosure is based, may readily be utilized as a basis for the designing of other structures, methods, and systems for carrying out the several purposes of the disclosed subject matter. Therefore, the claims should be regarded as including such equivalent constructions insofar as they do not depart from the spirit and scope of the disclosed subject matter.
Although the disclosed subject matter has been described and illustrated in the foregoing exemplary embodiments, it is understood that the present disclosure has been made only by way of example, and that numerous changes in the details of implementation of the disclosed subject matter may be made without departing from the spirit and scope of the disclosed subject matter.
| Number | Name | Date | Kind |
|---|---|---|---|
| 4835538 | McKenna et al. | May 1989 | A |
| 4943809 | Zaghloul | Jul 1990 | A |
| 5231406 | Sreenivas | Jul 1993 | A |
| 5400040 | Lane et al. | Mar 1995 | A |
| 5406292 | Schnetzer et al. | Apr 1995 | A |
| 5896107 | Huynh | Apr 1999 | A |
| 6133882 | LaFleur et al. | Oct 2000 | A |
| 6359588 | Kuntzsch | Mar 2002 | B1 |
| 7636063 | Channabasappa | Dec 2009 | B2 |
| 10186778 | Zemliakov | Jan 2019 | B2 |
| 10978812 | Jain et al. | Apr 2021 | B2 |
| 11177571 | Liu et al. | Nov 2021 | B2 |
| 20060044189 | Livingston et al. | Mar 2006 | A1 |
| 20070126638 | Channabasappa | Jun 2007 | A1 |
| 20160365632 | Lee | Dec 2016 | A1 |
| 20170133756 | Eastburg et al. | May 2017 | A1 |
| 20180219281 | Sudo et al. | Aug 2018 | A1 |
| 20200067191 | Rogers | Feb 2020 | A1 |
| 20200303820 | Jang et al. | Sep 2020 | A1 |
| 20220006185 | Yetisir | Jan 2022 | A1 |
| 20220070997 | Clark | Mar 2022 | A1 |
| Number | Date | Country |
|---|---|---|
| 3838999 | Nov 1999 | AU |
| 108717996 | Oct 2018 | CN |
| 111262022 | Jun 2020 | CN |
| WO 2009037716 | Mar 2009 | WO |
| Entry |
|---|
| Carver et al., “Microstrip Antenna Technology;” Proceedings of IEEE Transactions on Antennas and Propagation, vol. AP-29, No. 1; Jan. 1981; 23 Pages. |
| Papapolymerou et al., “Micromachined Patch Antennas;” Proceedings of IEEE Transactions on Antennas and Propagation, vol. 46, No. 2; Feb. 1998; 9 Pages. |
| Pozar, “Microstrip Antenna Aperture-Coupled to a Microstripline;” Article from Electronics Letters, vol. 21, No. 2; Jan. 17, 1985; 2 Pages. |
| Pozar et al., “Increasing the Bandwidth of a Microstrip Antenna by Proximity Coupling;” Article from Electronics Letters, vol. 23, No. 8; Apr. 9, 1987; 2 Pages. |
| Wood, “Improved Bandwidth of Microstrip Antennas Using Parasitic Elements;” Proceedings of IEEE Antennas and Propagation Society International Symposium 1992 Digest; Jun. 18-25, 1992; 4 Pages. |
| Number | Date | Country | |
|---|---|---|---|
| 20230369766 A1 | Nov 2023 | US |
