The present disclosure generally relates to a magnetic device, and particularly to a memory storage device that uses a magnetic moment to store data.
Ferromagnetic material is utilized to manufacture a non-volatile memory device, such as magnetoresistive RAM (MRAM). Since its discovery in 1970, the tunneling effect of the magnetic tunnel junction (MTJ) has caused a dramatic change in the use of magnetic memory devices. The MTJ usually consists of at least three layers, which are the pinned layer, the barrier layer and the free layer. As a result, the stored memory in the domain can be written or read by sensing the current tunneling through the barrier.
The correctivity or the ratio of the self spin-polarization is one of the major concerns regarding the efficiency and accuracy of when to read or write the memory storage domain. One possible reason for the degraded performance is attributed to the damage on the film during manufacturing. Etching or plasma bombardments attacking the exposure surface during the process or oxidation of the post-etched film surface are probable factors. It was reported that even introducing a cap layer, such as silicon nitride, on the device right after the etching process would cause degradation. Therefore, in order to improve the performance of a magnetic memory device, the process of repairing the damage or reducing the oxidation of the device is essential.
The objective of the present disclosure is to provide a magnetic device including a substrate, a sensing block and a repair layer. The substrate has a registration layer and a barrier layer disposed on the registration layer. The sensing block is patterned to distribute on the barrier layer. The repair layer is disposed on the barrier layer and the registration layer is configured to store data.
The objective of another embodiment of the present disclosure is to provide a racetrack magnetic memory device including a substrate, a sensing block and a repair layer. The substrate has a registration layer and a barrier layer disposed on the registration layer. The sensing block is patterned to distribute on the barrier layer. The repair layer is disposed on the barrier layer and the registration layer is configured to store data.
The invention will be described according to the appended drawings in which:
The embodiments of the present invention are described more fully hereinafter with reference to the accompanying drawings, which form a part hereof, and which show, by way of illustration, specific exemplary embodiments by which the invention may be practiced. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. As used herein, the term “or” is an inclusive “or” operator, and is equivalent to the term “and/or,” unless the context clearly dictates otherwise. In addition, throughout the specification, the meaning of “a,” “an,” and “the” include plural references. The term “coupled” implies that the elements may be directly connected together or may be coupled through one or more intervening elements.
The first embodiment according to the present disclosure can be referred to
As shown in
The process of manufacturing the magnetic device 10 can be accomplished in various ways in accordance to each user's preference. In one embodiment according to the present disclosure, thin film deposition such as PVD, CVD, etc. is utilized to form the registration layer 150, the barrier layer 120 and the films constructing the sensing block stack 200 in different steps. As shown in
The material which is selected to form the repair layer 300 may possess a standard oxidation potential value, Er, which is greater than the standard oxidation potential value of the registration layer 150, Eb. In an exemplary embodiment, the oxidation potential value, Er of the repair layer is greater than 0.44V.
In another example, the material for the repair layer 300 can be metal and is preferably selected from Mg, Al, Ti, Mn, Zn, Cr, Ta, or the combination thereof, resulting in the oxygen concentration in the barrier layer 120 to be lowered after coming in contact with the repair layer 300.
In another embodiment, the alloy of Mg, Al, Ti, Mn, Zn, Cr, or Ta is used to form the repair layer. Moreover, metal oxide is also an option to form the repair layer. In one embodiment, all possible oxidation states of the following metals: Mg, Al, Ti, Mn, Zn, Cr, Ta, or the combination thereof can be chosen to achieve the same objective of the present disclosure.
As shown in
The process to manufacture the racetrack magnetic memory device 20 adopts similar steps as utilized for the magnetic device 10. The differences may be a different mask or few more steps that are required in order to form the racetrack memory. For example, an etching step may be provided to carve out a portion of each blanket film for the registration layer 150 and the barrier layer 120 to form a racetrack.
In another example, the material for the repair layer 300 can be metal and is preferably selected from Mg, Al, Ti, Mn, Zn, Cr, Ta, or the combination thereof, resulting in the oxygen concentration in the barrier layer 120 to be lowered after coming in contact with the repair layer 300.
In another embodiment, the alloy of Mg, Al, Ti, Mn, Zn, Cr, or Ta is used to form the repair layer. Moreover, metal oxide is also an option to form the repair layer. In one embodiment, all possible oxidation states of the following metals: Mg, Al, Ti, Mn, Zn, Cr, Ta, or the combination thereof can be chosen to achieve the same objective of the present disclosure.
The methods and features of this invention have been sufficiently described in the above examples and descriptions. It should be understood that any modifications or changes without departing from the spirit of the invention are intended to be covered in the protection scope of the invention.
Number | Name | Date | Kind |
---|---|---|---|
6351410 | Nakao et al. | Feb 2002 | B1 |
6475857 | Kim et al. | Nov 2002 | B1 |
6521931 | Sandhu et al. | Feb 2003 | B2 |
6555858 | Jones et al. | Apr 2003 | B1 |
6600638 | Gill | Jul 2003 | B2 |
6621730 | Lage | Sep 2003 | B1 |
6624987 | Hayashi et al. | Sep 2003 | B1 |
6724653 | Iwata et al. | Apr 2004 | B1 |
6784517 | Kleveland et al. | Aug 2004 | B2 |
6795334 | Iwata et al. | Sep 2004 | B2 |
6798626 | Hayashi et al. | Sep 2004 | B2 |
6815248 | Leuschner et al. | Nov 2004 | B2 |
6911156 | Grynkewich et al. | Jun 2005 | B2 |
6912152 | Iwata et al. | Jun 2005 | B2 |
6914806 | Kunikiyo | Jul 2005 | B2 |
6916669 | Jones et al. | Jul 2005 | B2 |
6990004 | Iwata | Jan 2006 | B2 |
7009266 | Shi et al. | Mar 2006 | B2 |
7033881 | Gaidis et al. | Apr 2006 | B2 |
7064975 | Iwata | Jun 2006 | B2 |
7084437 | Kitamura et al. | Aug 2006 | B2 |
7097777 | Costrini et al. | Aug 2006 | B2 |
7141438 | Ha et al. | Nov 2006 | B2 |
7164167 | Iwata et al. | Jan 2007 | B2 |
7183633 | Daneman et al. | Feb 2007 | B2 |
7199055 | Chen et al. | Apr 2007 | B2 |
7203084 | Lee et al. | Apr 2007 | B2 |
7291878 | Stipe | Nov 2007 | B2 |
7319262 | Liu et al. | Jan 2008 | B2 |
7352041 | Horikoshi | Apr 2008 | B2 |
7368299 | Lee et al. | May 2008 | B2 |
7372118 | Asao et al. | May 2008 | B2 |
7463502 | Stipe | Dec 2008 | B2 |
7476954 | Wang et al. | Jan 2009 | B2 |
7488648 | Baik | Feb 2009 | B2 |
7527986 | Jung | May 2009 | B1 |
7528457 | Horng et al. | May 2009 | B2 |
7541199 | Bae et al. | Jun 2009 | B2 |
7554834 | Wunderlich et al. | Jun 2009 | B2 |
7564658 | Zhang et al. | Jul 2009 | B2 |
7579197 | Li | Aug 2009 | B1 |
7582926 | Iwata et al. | Sep 2009 | B2 |
7595520 | Horng et al. | Sep 2009 | B2 |
7598579 | Horng et al. | Oct 2009 | B2 |
7663131 | Horng et al. | Feb 2010 | B2 |
7672093 | Horng et al. | Mar 2010 | B2 |
7696548 | Wang et al. | Apr 2010 | B2 |
7723128 | Wang et al. | May 2010 | B2 |
7732881 | Wang | Jun 2010 | B2 |
7767469 | Asao et al. | Aug 2010 | B2 |
7777261 | Huai et al. | Aug 2010 | B2 |
7781231 | Li | Aug 2010 | B2 |
7829963 | Wang et al. | Nov 2010 | B2 |
7829964 | Chen et al. | Nov 2010 | B2 |
7843718 | Koh et al. | Nov 2010 | B2 |
7875958 | Cheng et al. | Jan 2011 | B2 |
7880249 | Yuan et al. | Feb 2011 | B2 |
7910407 | Scheuerlein | Mar 2011 | B2 |
7923812 | Scheuerlein | Apr 2011 | B2 |
7932572 | Tsujiuchi | Apr 2011 | B2 |
7936003 | Kang et al. | May 2011 | B2 |
7936027 | Xiao et al. | May 2011 | B2 |
7973349 | Huai et al. | Jul 2011 | B2 |
7989224 | Gaidis | Aug 2011 | B2 |
7999338 | Zheng et al. | Aug 2011 | B2 |
8026562 | Chen et al. | Sep 2011 | B2 |
8036018 | Koh et al. | Oct 2011 | B2 |
8039372 | Min et al. | Oct 2011 | B2 |
8039885 | Wang et al. | Oct 2011 | B2 |
8062909 | Wang et al. | Nov 2011 | B2 |
8125040 | Kang et al. | Feb 2012 | B2 |
8133809 | Mao | Mar 2012 | B2 |
8143683 | Wang et al. | Mar 2012 | B2 |
8176622 | Horng et al. | May 2012 | B2 |
8178363 | Wang et al. | May 2012 | B2 |
8456898 | Chen et al. | Jun 2013 | B2 |
8466525 | Zheng et al. | Jun 2013 | B2 |
8470462 | Horng et al. | Jun 2013 | B2 |
8492860 | Zhou et al. | Jul 2013 | B2 |
8542524 | Keshtbod et al. | Sep 2013 | B2 |
8604572 | Wang et al. | Dec 2013 | B2 |
8697484 | Apalkov et al. | Apr 2014 | B2 |
8710602 | Tang et al. | Apr 2014 | B2 |
20030022420 | Kleveland et al. | Jan 2003 | A1 |
20030053332 | Kleveland et al. | Mar 2003 | A1 |
20030117834 | Iwata et al. | Jun 2003 | A1 |
20030123271 | Iwata | Jul 2003 | A1 |
20030151079 | Jones et al. | Aug 2003 | A1 |
20030151859 | Hayashi et al. | Aug 2003 | A1 |
20030161197 | Iwata et al. | Aug 2003 | A1 |
20030199104 | Leuschner et al. | Oct 2003 | A1 |
20030223283 | Kunikiyo | Dec 2003 | A1 |
20040084400 | Costrini et al. | May 2004 | A1 |
20040087163 | Steimle et al. | May 2004 | A1 |
20040164359 | Iwata et al. | Aug 2004 | A1 |
20040175848 | Chen et al. | Sep 2004 | A1 |
20040205958 | Grynkewich et al. | Oct 2004 | A1 |
20040206982 | Lee et al. | Oct 2004 | A1 |
20040245547 | Stipe | Dec 2004 | A1 |
20050009210 | Hosotani | Jan 2005 | A1 |
20050020076 | Lee et al. | Jan 2005 | A1 |
20050035386 | Ha et al. | Feb 2005 | A1 |
20050042825 | Kitamura et al. | Feb 2005 | A1 |
20050048674 | Shi et al. | Mar 2005 | A1 |
20050052938 | Horikoshi | Mar 2005 | A1 |
20050083730 | Iwata | Apr 2005 | A1 |
20050083731 | Iwata | Apr 2005 | A1 |
20050083734 | Iwata | Apr 2005 | A1 |
20050106509 | Chang et al. | May 2005 | A1 |
20050207064 | Costrini et al. | Sep 2005 | A1 |
20050274997 | Gaidis et al. | Dec 2005 | A1 |
20050285183 | Baik | Dec 2005 | A1 |
20060014305 | Lee et al. | Jan 2006 | A1 |
20060033136 | Liu et al. | Feb 2006 | A1 |
20060049826 | Daneman et al. | Mar 2006 | A1 |
20060054947 | Asao et al. | Mar 2006 | A1 |
20060061915 | Zhang et al. | Mar 2006 | A1 |
20060081941 | Iwata et al. | Apr 2006 | A1 |
20060131629 | Fukuzumi et al. | Jun 2006 | A1 |
20060170031 | Kang et al. | Aug 2006 | A1 |
20060215442 | Wunderlich et al. | Sep 2006 | A1 |
20060246604 | Bae et al. | Nov 2006 | A1 |
20070034919 | Wang et al. | Feb 2007 | A1 |
20070041125 | Ha et al. | Feb 2007 | A1 |
20070063236 | Huai et al. | Mar 2007 | A1 |
20070063237 | Huai et al. | Mar 2007 | A1 |
20070120210 | Yuan et al. | May 2007 | A1 |
20080029754 | Min et al. | Feb 2008 | A1 |
20080037349 | Stipe | Feb 2008 | A1 |
20080073641 | Cheng et al. | Mar 2008 | A1 |
20080206895 | Asao et al. | Aug 2008 | A1 |
20080241598 | Fukuzumi et al. | Oct 2008 | A1 |
20090027955 | Koh et al. | Jan 2009 | A1 |
20090108383 | Horng et al. | Apr 2009 | A1 |
20090130779 | Li et al. | May 2009 | A1 |
20090159562 | Cho et al. | Jun 2009 | A1 |
20090159563 | Jung | Jun 2009 | A1 |
20090173977 | Xiao et al. | Jul 2009 | A1 |
20090206425 | Tsujiuchi | Aug 2009 | A1 |
20090209050 | Wang et al. | Aug 2009 | A1 |
20090224341 | Li | Sep 2009 | A1 |
20090227045 | Li | Sep 2009 | A1 |
20090230445 | Bae et al. | Sep 2009 | A1 |
20090261434 | Kang et al. | Oct 2009 | A1 |
20100072528 | Inokuchi et al. | Mar 2010 | A1 |
20100072566 | Kang et al. | Mar 2010 | A1 |
20100136713 | Horng et al. | Jun 2010 | A1 |
20100155689 | Scheuerlein | Jun 2010 | A1 |
20100157653 | Scheuerlein | Jun 2010 | A1 |
20100176429 | Wang et al. | Jul 2010 | A1 |
20100178715 | Wang et al. | Jul 2010 | A1 |
20100193891 | Wang et al. | Aug 2010 | A1 |
20100200899 | Marukame et al. | Aug 2010 | A1 |
20100219493 | Li | Sep 2010 | A1 |
20100237448 | Shin | Sep 2010 | A1 |
20100301480 | Choi et al. | Dec 2010 | A1 |
20110044093 | Koh et al. | Feb 2011 | A1 |
20110044096 | Li | Feb 2011 | A1 |
20110049654 | Li et al. | Mar 2011 | A1 |
20110049656 | Li et al. | Mar 2011 | A1 |
20110057275 | Tsujiuchi et al. | Mar 2011 | A1 |
20110086498 | Cheng et al. | Apr 2011 | A1 |
20110102948 | Apalkov et al. | May 2011 | A1 |
20110117677 | Yuan et al. | May 2011 | A1 |
20110121417 | Li et al. | May 2011 | A1 |
20110127483 | Sonehara | Jun 2011 | A1 |
20110140070 | Kim | Jun 2011 | A1 |
20110156182 | Takeuchi et al. | Jun 2011 | A1 |
20110163401 | Tsujiuchi | Jul 2011 | A1 |
20110175153 | Kang et al. | Jul 2011 | A1 |
20110189851 | Jeong et al. | Aug 2011 | A1 |
20110198314 | Wang et al. | Aug 2011 | A1 |
20110198715 | Matsuoka et al. | Aug 2011 | A1 |
20110201212 | Yamamoto et al. | Aug 2011 | A1 |
20110216447 | Li et al. | Sep 2011 | A1 |
20110233696 | Li | Sep 2011 | A1 |
20110233697 | Kajiyama | Sep 2011 | A1 |
20110235217 | Chen et al. | Sep 2011 | A1 |
20110272380 | Jeong et al. | Nov 2011 | A1 |
20110293967 | Zhang et al. | Dec 2011 | A1 |
20120007196 | Natori et al. | Jan 2012 | A1 |
20120007212 | Seo et al. | Jan 2012 | A1 |
20120008367 | Kajiyama | Jan 2012 | A1 |
20120028373 | Belen et al. | Feb 2012 | A1 |
20120040531 | Mao | Feb 2012 | A1 |
20120043630 | Omori et al. | Feb 2012 | A1 |
20120058574 | Wang et al. | Mar 2012 | A1 |
20120068286 | Hosotani et al. | Mar 2012 | A1 |
20120086065 | Kim et al. | Apr 2012 | A1 |
20120086074 | Hwang et al. | Apr 2012 | A1 |
20120086089 | Li et al. | Apr 2012 | A1 |
20120098072 | Han et al. | Apr 2012 | A1 |
20120119286 | Kim et al. | May 2012 | A1 |
20130015542 | Wang et al. | Jan 2013 | A1 |
20130059168 | Tahmasebi et al. | Mar 2013 | A1 |
20130207209 | Wang et al. | Aug 2013 | A1 |
20130334631 | Kinney et al. | Dec 2013 | A1 |
20140001585 | Dimitrov et al. | Jan 2014 | A1 |
20140022839 | Park et al. | Jan 2014 | A1 |
20140056061 | Khvalkovskiy et al. | Feb 2014 | A1 |
20140084398 | Oguz et al. | Mar 2014 | A1 |
Number | Date | Country |
---|---|---|
2013101203 | Jul 2013 | WO |
Entry |
---|
Su Ryan Min et al., “Etch characteristics of magnetic tunnel junction stack using a high density plasma in a HBr/Ar gas,” International Symposium on Advanced Magnetic Materials and Applications, 2007, pp. 4416-4420, vol. 4, No. 12. |
Eun Ho Kim et al., “Evolution of Etch profile of magnetic tunnel junction stacks etched in a CH3OH/Ar plasma,” Journal of the Electrochemical Society, 2012, pp. H230-H234, vol. 159, No. 3. |
Young Soo Song et al., “Influence of wet chemical cleaning on properties of magnetic tunnel junction stack for magnetic RAM”, Electrochemical and Solid-State Letters, 2004, pp. C64-C66, vol. 7, No. 5. |
Eun Ho Kim et al., “Investigation on etch characteristics of nanometer-sized magnetic tunnel junction stacks using a HBr/Ar plasma”, Journal of Nanoscience and Nanotechnology, Jul. 2011, pp. 6616-6620, vol. 11, No. 7. |
J.M. Pomeroy et al., “Magnetic switching fluctuations from sidewall oxides in MgO/FeCoB magnetic tunnel junctions”, Applied Physics Letters, Aug. 29, 2011, vol. 99, No. 9. |
Number | Date | Country | |
---|---|---|---|
20140145277 A1 | May 2014 | US |