Claims
- 1. A magnetic field sensing element comprising:an underlayer formed on a substrate; a giant magnetoresistance element formed on the underlayer for detecting a change in a magnetic field; and an integrated circuit formed on the underlayer for carrying out predetermined arithmetic processing based on a change in a magnetic field detected by the giant magnetoresistance element, wherein the giant magnetoresistance element and the integrated circuit are formed on the same surface, and the giant magnetoresistance element is formed by repeatedly laminating a Fe (x) Co (1−x) layer (0≦x≦0.3) and a Cu layer, a film thickness of the Cu layers per layer being set to such a film thickness that causes the change rate of magnetoresistance in a layer of the Cu layers to be around a second peak, and protective films on the giant magnetoresistance element are formed by spin coating or by means of low-thermal plasma CVD method.
- 2. A magnetic field sensing element comprising:an integrated circuit; an underlayer, and a metal pad formed on a substrate in the order stated; a second level difference buffer layer formed on the underlayer and the metal pad to absorb the level difference between the surface of the underlayer and the surface of the metal pad; and a giant magnetoresistance element formed on the second level difference buffer layer, wherein the giant magnetoresistance element is formed by repeatedly laminating a Fe (x) Co (1−x) layer (0≦x≦0.3) and a Cu layer, film thickness of the Cu layers per layer being set to such a film thickness that causes a change rate of magnetoresistance in a layer of the Cu layers to be around a second peak, and protective films on the giant magnetoresistance element are formed by spin coating or by means of low-thermal plasma CVD method.
- 3. A magnetic field sensing element comprising:an integrated circuit formed on a substrate and having a capacitor portion; an underlayer formed on the integrated circuit; a second metal layer formed on the underlayer; and a giant magnetoresistance element formed on the capacitor portion of the integrated circuit, wherein the giant magnetoresistance element is formed by repeatedly laminating a Fe (x) Co (1−x) layer (0≦x≦0.3) and a Cu layer, film thickness of the Cu layers per layer being set to such a film thickness that causes a change rate of magnetoresistance in a layer of the Cu layers to be around a second peak, and protective films on the giant magnetoresistance element are formed by spin coating or by means of low-thermal plasma CVD method.
Priority Claims (2)
Number |
Date |
Country |
Kind |
10-130732 |
May 1998 |
JP |
|
11-83502 |
Mar 1999 |
JP |
|
Parent Case Info
This is a continuation of application Ser. No. 09/307,751 filed May 10, 1999 now U.S. Pat. No. 6,426,620; the disclosure of which is incorporated herein by reference.
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DE |
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DE |
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DE |
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EP |
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EP |
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FR |
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Non-Patent Literature Citations (1)
Entry |
“Magnetoresistance of Multilayers”, Journal of the Applied Magnetism Society of Japan, vol. 15, No. 151991, p 813-821. |
Continuations (1)
|
Number |
Date |
Country |
Parent |
09/307751 |
May 1999 |
US |
Child |
10/162180 |
|
US |