As is known, there are a variety of types of magnetic field sensing elements, including, but not limited to, Hall Effect elements, magnetoresistance elements, and magnetotransistors. As is also known, there are different types of Hall Effect elements, for example, planar Hall elements, vertical Hall elements, and circular Hall elements. As is also known, there are different types of magnetoresistance elements, for example, anisotropic magnetoresistance (AMR) elements, giant magnetoresistance (GMR) elements, tunneling magnetoresistance (TMR) elements, Indium antimonide (InSb) elements, and magnetic tunnel junction (MTJ) elements.
Hall Effect elements generate an output voltage proportional to a magnetic field. In contrast, magnetoresistance elements change resistance in proportion to a magnetic field. In a circuit, an electrical current can be directed through the magnetoresistance element, thereby generating a voltage output signal proportional to the magnetic field.
Magnetic field sensors, which use magnetic field sensing elements, are used in a variety of applications, including, but not limited to, a current sensor that senses a magnetic field generated by a current carried by a current-carrying conductor, a magnetic switch (also referred to herein as a proximity detector) that senses the proximity of a ferromagnetic or magnetic object, a rotation detector that senses passing ferromagnetic articles, for example, gear teeth, and a magnetic field sensor that senses a magnetic field density of a magnetic field. Magnetic switches are used as examples herein. However, the circuits and techniques described herein apply also to any magnetic field sensor.
Conventional magnetic switches can sense a magnetic field above a threshold level in one dimension, i.e., along a line. Some conventional magnetic switches can sense a magnetic field above a threshold in two dimensions, i.e., in a plane.
In one aspect, a magnetic field sensor includes first and second magnetic field sensing elements having respective first and second maximum response axes. The first and second maximum response axes point along respective first and second different coordinate axes. In response to a magnetic field, the first and second magnetic field sensing elements are operable to generate first and second magnetic field signals. The magnetic field sensor also includes an electronic circuit coupled to receive the first and the second magnetic field signals. The electronic circuit is configured to determine a magnitude of a vector sum of the first and the second magnetic field signals and provide one or more signals in response to the magnitude of the vector sum determined.
In another aspect, a magnetic field sensor includes first, second, and third magnetic field sensing elements having respective first, second and third maximum response axes. The first, second and third maximum response axes point along respective first, second, and third different coordinate axes. In response to a magnetic field, the first, second, and third magnetic field sensing elements are operable to generate first, second, and third magnetic field signals. The magnetic field sensor also includes an electronic circuit coupled to receive the first, the second and the third magnetic field signals. The electronic circuit is configured to determine a magnitude of a vector sum of the first, the second and the third magnetic field signals and provide one or more signals in response to the magnitude of the vector sum determined.
A method includes receiving a first magnetic field signal from a first magnetic field sensing element and receiving a second magnetic field signal from a second magnetic field sensing element. The first and second magnetic field sensing elements have respective first and second maximum response axes. The first second and second maximum response axes point along respective first and second different coordinate axes. In response to a magnetic field, the first and second magnetic field sensing elements are operable to generate the first and the second magnetic field signals. The method also includes determining a magnitude of a vector sum of the first and the second magnetic field signals and providing one or more signals in response to the magnitude of the vector sum determined.
The foregoing features of the invention, as well as the invention itself may be more fully understood from the following detailed description of the drawings, in which:
As used herein, the term “magnetic field sensing element” is used to describe a variety of electronic elements that can sense a magnetic field. The magnetic field sensing element can be, but is not limited to, a Hall Effect element, a magnetoresistance element, or a magnetotransistor. As is known, there are different types of Hall Effect elements, for example, a planar Hall element, a vertical Hall element, and a Circular Vertical Hall (CVH) element. As is also known, there are different types of magnetoresistance elements, for example, a semiconductor magnetoresistance element such as Indium Antimonide (InSb), a giant magnetoresistance (GMR) element, an anisotropic magnetoresistance element (AMR), a tunneling magnetoresistance (TMR) element, and a magnetic tunnel junction (MTJ). The magnetic field sensing element may be a single element or, alternatively, may include two or more magnetic field sensing elements arranged in various configurations, e.g., a half bridge or full (Wheatstone) bridge. Depending on the device type and other application requirements, the magnetic field sensing element may be a device made of a type IV semiconductor material such as Silicon (Si) or Germanium (Ge), or a type III-V semiconductor material like Gallium-Arsenide (GaAs) or an Indium compound, e.g., Indium-Antimonide (InSb).
As is known, some of the above-described magnetic field sensing elements tend to have an axis of maximum sensitivity in the plane of a substrate that supports the magnetic field sensing element, and others of the above-described magnetic field sensing elements tend to have an axis of maximum sensitivity normal to a substrate that supports the magnetic field sensing element. In particular, planar Hall elements tend to have axes of sensitivity normal to a substrate, while metal based or metallic magnetoresistance elements (e.g., GMR, TMR, AMR) and vertical Hall elements tend to have axes of sensitivity in the plane of the substrate.
As used herein, the term “magnetic field sensor” is used to describe a circuit that uses a magnetic field sensing element, generally in combination with other circuits. Magnetic field sensors are used in a variety of applications, including, but not limited to, an angle sensor that senses an angle of a direction of a magnetic field, a current sensor that senses a magnetic field generated by a current carried by a current-carrying conductor, a magnetic switch that senses the proximity of a ferromagnetic object, a rotation detector that senses passing ferromagnetic articles, for example, magnetic domains of a ring magnet or a ferromagnetic target (e.g., gear teeth) where the magnetic field sensor is used in combination with a back-biased or other magnet, and a magnetic field sensor that senses a magnetic field density of a magnetic field.
Referring to
An x, y, z Cartesian coordinate system is shown and will be referenced in figures that follow.
Referring now to
It is intended that the maximum response axis of the planar Hall element 202 points in the direction of the z-axis of
While orthogonal Cartesian coordinates are shown and described herein, it should be appreciated that orientations of the maximum response axes of the planar Hall element 202, the first vertical Hall element 204, and the second vertical Hall element 206 need not point in orthogonal directions. Orthogonal directions are merely used as an example herein.
It is known that Hall elements tend to generate an output voltage signal that has both a magnetically responsive signal portion and an unwanted DC offset signal portion. Current spinning (also referred to as chopping) is a known technique used to reduce the offset signal portion. Chopping can be applied to both planar Hall elements and vertical Hall elements. With chopping, selected drive and signal contact pairs are interchanged during each phase of the chopping.
Chopping tends to result in a frequency domain separation of the magnetically responsive signal portion of an output signal from a Hall element with respect to the offset signal portion of the output signal from the Hall element. In so-called “signal modulation,” the magnetically responsive signal portion is shifted to a higher frequency and the offset signal portion remains at baseband. In so-called “offset modulation,” the offset signal portion is shifted to a higher frequency and the magnetically responsive signal portion remains at baseband. For a planar Hall element, these two types of chopping are described, for example, in U.S. patent application Ser. No. 13/095,371, filed Apr. 27, 2011, entitled “Circuits and Methods for Self-Calibrating or Self-Testing a Magnetic Field Sensor.” For a vertical Hall element, chopping is described in U.S. patent application Ser. No. 13/766,341, filed Feb. 13, 2013, entitled “MAGNETIC FIELD SENSOR AND RELATED TECHNIQUES THAT PROVIDE VARYING CURRENT SPINNING PHASE SEQUENCES OF A MAGNETIC FIELD SENSING ELEMENT.” Both of these applications are assigned to the assignee of the present application and both are incorporated by reference herein in their entirety.
The signal modulation type chopping is described in figures herein. However, in other embodiments, the offset modulation type of chopping can be used.
Furthermore, magnetic field sensor are shown herein that employ chopping arrangements, in other embodiments, no chopping is used.
In accordance with the above-described chopping, power chopping switches 208 apply chopped drive signals 208b to the planar Hall element 202, chopped drive signals 208a to the first vertical Hall element 204, and chopped drive signals 208c to the second vertical Hall element 206. The chopped drive signals change phases at a rate determined by a clock signal with a frequency, Fchop. The power chopping switches 208 also receive the sample clock, Sclk, signal. It will become apparent from discussion below in conjunction with
Also in accordance with the above-described chopping, signal chopping switches 214 select signal contacts of the planar Hall element 202, signal chopping switches 210 select signal contacts of the first vertical Hall element 204, and signal chopping switches 212 select signal contacts of the second vertical Hall element 212. As described in further detail below, the chopping, and operation of the planar Hall element 202, the first vertical Hall element 204, and the second vertical Hall element 206 occur from time to time in accordance with the sample clock, Sclk, received by the power chopping switches 208 and by the various signal chopping switches 210, 212, 214.
The signal chopping switches 210, 212, 214 are also coupled to receive the chopping frequency clock, Fchop, described more fully below.
A time division multiplex module 220 is coupled to receive three different differential signals 210a, 210b, and 212a, 212b, and 214a, 214b from the signal chopping switches 210, 212, 214. The time division multiplex module 220 is also coupled to receive the sample clock, Sclk. It will be appreciated that the three differential signals 210a, 210b, and 212a, 212b, and 214a, 214b are chopped signals, for which the magnetically responsive signal portion can be shifted to a higher frequency in accordance with the chopping frequency, Fchop. The unwanted offset signal portion remains at baseband within the three differential signals 210a, 210b, and 212a, 212b, and 214a, 214b.
While differential signals are described above and below, it will be appreciated that, in other embodiments, similar circuits can be designed that use single ended signals.
The time division multiplex module 220 is configured to sequentially select from among the three different differential signals 210a, 210b, and 212a, 212b, and 214a, 214b and to provide a differential sequential signal at an output therefrom, which is representative of sequential ones of the three differential signals 210a, 210b, and 212a, 212b, and 214a, 214b received by the time division multiplex module 220.
An amplifier 222 is coupled to receive the differential sequential signal 220a, 220b from the time division multiplex module 220 and is configured to generate a differential amplified signal 222a, 222b.
A modulator 226 is coupled to receive the differential amplified signal 222a, 222b and to generate a differential modulated signal 224a, 224b. The modulator 226 is operable to do another frequency conversion, i.e., to shift a frequency of the magnetically responsive signal portion back to baseband, and to shift the offset signal portion up to higher frequency in accordance with the chopping frequency, Fchop. It should be appreciated that, the modulator 226 also operates to shift an unwanted offset generated by the amplifier 222 up to the higher frequency. Thus, the differential modulated signal 226a, 226b generated by the modulator 226 has unwanted offset signal portions shifted to a higher frequency and the magnetically responsive signal portion, which is desired, is at baseband.
The differential modulated signal 226a, 226b generated by the modulator 226 can be received by a filter, here, a switched capacitor filter 228, which is an analog sampled filter. In some embodiments the switched capacitor filter 228 is a switched capacitor notch filter, which has a transfer function with a first notch at the chopping frequency, Fchop. The filter 228 essentially removes the unwanted offset signal portion that occurs in the differential modulated signal 226a, 226b at the frequency, Fchop.
An exemplary switched capacitor notch filter is described in U.S. Pat. No. 7,990,209, issued Aug. 2, 2011, entitled “SWITCHED CAPACITOR NOTCH FILTER,” which is assigned to the assignee of the present invention and incorporated by reference herein in its entirety.
The switched capacitor filter 228 is configured to generate a filtered signal 228a, which is received by a comparator 230, referred to herein as an omni comparator for reasons that will be apparent from discussion below. The omni comparator 230 is described more fully below in conjunction with
From discussion above, in accordance with a sampling clock signal, Sclk, received by the time division multiplex module 220, it will be apparent that the filtered signal 228a provided by the switched capacitor filter 228 is, at some sequential times, representative of a signal generated by the planar Hall element 202, at some other sequential times representative of a signal generated by the first vertical Hall element 204, and at some other sequential times representative of a signal generated by the second vertical Hall element 206.
The omni comparator 230 is coupled to receive threshold signals 240a, 240b from a digital to analog converter 240. In some embodiments, the threshold signals 240a, 204b can be the same for each one of the sequential signals described above and provided by the switched capacitor filter 228, or different thresholds can be provided for each one of the sequential signals described above and provided by the switched capacitor filter 228.
The comparator 230 is configured to generate a comparison signal received by an inverter 231, which generates an inverted comparison signal 231a received by registers 232.
The registers 232 are also coupled to receive the sample clock signal, Sclk. The registers are operable, by way of decoding the sample clock signal, Sclk, to sequentially store comparison values (e.g., zero or one) corresponding to the comparisons of the sequential signals 228a provided by the switch capacitor filter 228 with appropriate thresholds 240a, 240b. Thus, in some embodiments, a comparison value can be stored in a register 232a, that is representative of a sensed magnetic field in an x direction being above a threshold signal, another comparison value can be stored in a register 232b that is representative of the sensed magnetic field in a y direction being above a threshold signal, and another comparison value can be stored in a register 232c that is representative of the sensed magnetic field in a z direction being above a threshold signal. As described above the threshold signals 240a, 240b can be the same or they can be different for each one of the Hall elements.
As is described in conjunction with
The registers 232 provide output values 232aa, 232ba, 232ca. A logic gate 234 is coupled to receive the output values 232aa, 232ba, 232ca. If any one of the output values 232aa, 232ba, 232ca is indicative of a magnetic field being above an associated operating point threshold in a direction of a corresponding coordinate axis, an output signal 234a changes state.
A select output gate 236 can be coupled to receive the output values 232aa, 232ba, 232ca and also coupled to receive the output signal 234a. By way of a select control signal provided from outside of the magnetic field sensor 200 by a user, the select output gate 236 can provide as an output signal either the output signal 234a, all of the output values 232aa, 232ba, 232ca, or any one or more of the output values 232aa, 232ba, 232ca.
The magnetic field sensor can include one or more of a sensitivity adjust memory 216, a detection threshold memory 238, and an offset adjust memory 242, each of which can be programmed with values by a user via a programs signal from outside of the magnetic field sensor 200. The memories can be non-volatile memories.
The sensitivity adjust memory 216 can provide sequential sensitivity values 216a that can take on three different values determined in accordance with the sample clock signal, Sclk. Thus, the sensitivity adjust memory can provide a sensitivity value 216a that is appropriate for which Hall element is presently powered up in a sequential fashion. A digital-to-analog converter 218 can be coupled to receive the sequential sensitivity values 216a and can provide sequential sensitivity signal 218a.
The power chopping switches 208 can be coupled to receive a signal from a current source 219 as a drive signal. The drive signal can be adjusted to three different values depending upon the three different values of the sequential sensitivity signal 218a. In this way, the planar Hall element 202, the first vertical Hall element 204, and the second vertical Hall element 206 can each be driven with different amounts of drive signal to achieve either different sensitivities to a magnetic field, or preferably, the same sensitivities to the magnetic field.
In an alternate embodiment, the sensitivities of the three Hall elements are instead adjusted by way of sequential sensitivity values 216b coupled to a digital-to-analog converter 224, which sequentially adjusts a gain of the amplifier 222.
The detection threshold memory 238 can be used to store three thresholds (e.g., three symmetrical sets of two thresholds) that can be used to compare with each one of the three sequential signals within the output signal 228a from the switched capacitor filter 228. The three stored threshold can be the same or they can be different. Function of the magnetic field sensor 200 when the thresholds are the same and when the thresholds are different are described below in conjunction with
The offset adjust memory 242 can be used to store three offset correction values that can be sequentially applied to the omni comparator 230 (or, in other embodiments, to the amplifier 222) in accordance with the three sequential signals within the output signal 228a from the switched capacitor filter 228. It will be recognized that, while chopping is described in conjunction with the magnetic field sensor 200, still some residual DC offset may exist and the offset correction values applied through a digital-to-analog converter 244 to the omni comparator 230 can be used compensate for the residual offsets.
The magnetic field sensor 200 can include a micropower regulator 248 coupled to receive the magnetic field sensor power supply voltage, Vcc, and configured to generate a first regulated voltage, Vreg1, which can continuously power an oscillator 250, a power clock generator 252. The micropower regulator 248, the oscillator 250, the power clock generator 252, the output registers 232, the logic gate 234, and the select output gate 236 can remain powered up by Vreg1 at all times during operation of the magnetic field sensor 200. The oscillator 250 can generate a continuous clock signal 250a, and the power clock generator 252 can generate a continuous power clock signal, Pclk. The various clock signals are described more fully below in conjunction with
The power clock generator is configured to generate a power clock signal, Pclk received by a second voltage regulator 254 configured to generate a second regulated voltage, Vreg2, which turns on and off in accordance with states of the power clock signal, Pclk. The second regulator voltage, Vreg2, is used to power all portions of the magnetic field sensor except for the oscillator 250, the power clock generator 252, the output registers 232, the logic gate 234 and the select output gate 236. Thus, in operation, substantial portions of the magnetic field sensor 200 power on and off (or to a low power state) at a cycle rate and a duty cycle determined by the power clock signal, Pclk. Essentially, the magnetic field sensor powers up from time to time, senses a magnetic field in the environment, determines if the magnetic field is above operating point thresholds stores such information into the registers 232 and makes available an indication of same at all times. As a result, micropower operation is achieved.
The magnetic field sensor 200 can also include a sample clock module 256 coupled to receive the clock signal 250a and the chopping clock module 258 also coupled to receive the clock signal 250a. The sample clock module 256 and the chopping clock module 258 can also be coupled to receive the power clock signal, Pclk. The sample clock module 256 is configured to generate the sample clock, Sclk. The chopping clock module 258 is configured to generate the chopping clock with a frequency, Fchop.
Referring now to
In order to achieve micropower operation, in some embodiments, Thigh/(Thigh+Tlow) is less than or equal to 0.001, i.e., the power on duty cycle is less than 0.1 percent. However, in other embodiments, the duty cycle can be in a range of ten percent to 0.001 percent, or any duty cycle less than about ten percent.
In some embodiments, a sample time period, Thigh+Tlow, is about fifty milliseconds. Thus, the three Hall elements of
The above sample time period of fifty milliseconds is selected in accordance with a bandwidth of a sensed magnetic field. By Nyquist, 1/(sample time period) must be greater than two times the bandwidth of the signal to be sampled. Thus, if the sample time period is fifty milliseconds, the maximum bandwidth of the signal to be sample is ten Hz.
While the above represents a narrow detected bandwidth, the bandwidth of the electronic circuits of the magnetic fields sensor 200 of
A signal 320 is representative of the sample clock signal, Sclk, of
It should be appreciated that the various modules of the magnetic field sensor 200 of
A signal 340 is representative of the chopping clock signal with the frequency, Fchop of
It will be appreciated that all of the sampling of the Hall elements of
Referring now to
Reference is made below to threshold voltages VTH+, VTH−, VTL+, VTL−. It will be recognized that the threshold voltages VTH+ and VTL+ are representative of the above-described operating point thresholds (i.e., threshold signals 240a, 240b of
The comparator 438 includes a first input terminal 438a coupled at input port 435b to the input voltage VIN and a second input terminal, 438b, coupled to a threshold voltage VTL at terminal 435c. An output terminal 438c of comparator 438 is coupled to provide the output voltage VOUT at the output terminal 435d.
In this particular embodiment, comparators 436, 438 are provided having a means for including hysteresis such that the reference or threshold voltages VTH, VTL can be represented as VTH+ and VTH− and VTL+ and VTL−, respectively. The values VTH+, VTH−, VTL+, VTL− represent the comparator switch points depending upon the value of the output voltage VOUT. In operation, and as seen in
As can be seen in
If the output voltage VOUT is high and the input voltage VIN has a value greater than or equal to zero, when the input voltage VIN meets or exceeds the voltage VTH+, the output voltage switches from a value of VHIGH to VLOW and the switch point changes from VTH+ to VTH−. Thus the value of the output voltage VOUT will not switch from VLOW to VHIGH until the input voltage VIN reaches the value VTH−.
It should be appreciated that, in other embodiments and applications, it may be preferable to utilize comparators which do not have hysteresis and thus switching occurs at a single voltage level, e.g., VTH+ and −VTL−, i.e., only operating point thresholds are used. With reference to only one of the Hall elements of
Assuming the input voltage VIN is at or near zero volts (i.e. VIN=0 volts), the output voltage VOUT is at a first predetermined voltage level VHIGH. In response to a magnetic field, the Hall element (e.g., 202, 204, 206 of
Likewise, as the input voltage moves in a negative direction from zero volts and reaches and/or exceeds the threshold voltage −VTL+, the output voltage VOUT changes from the first value VHIGH to the second value VLOW. Similarly, as the input voltage VIN moves from −VTL+ and reaches and/or exceeds the voltage level −VTL−, the voltage level then changes from the output voltage level VLOW to VHIGH.
While the graph of
Referring now to
In operation of the magnetic field sensor 200 of
In view of the above, the magnetic field sensor 200 operates as a three-dimensional switch operable to detect a magnetic field that can be pointing in any direction with a magnitude that is beyond the outer box.
While square boxes are shown, any one of more dimensions of the two boxes can be reshaped (i.e., to a shape other than a cube) by changing threshold values stored in the detection threshold memory 238 of
Referring now to
An output signal ORout from the wired OR circuit can behave very much like the output signal 234a of
Referring now to
Magnetoresistance elements and magnetoresistance circuits are not chopped, and thus, the chopping is applied only to the planar Hall element 802.
In order to adjust sensitivities, the magnetic field sensor 800 can include digital-to-analog converters 820, 824 coupled to current sources 822, 826, respectively. The current sources 822, 826 are coupled to drive the magnetoresistance circuits 804, 806, respectively.
The digital-to-analog converters 820, 824 can be coupled to a sensitivity adjust memory 818. The sensitivity just memory 818 can be the same as or similar to the sensitivity adjust memory 216 of
Amplifiers 834, 830, 832 are coupled to the planar Hall element 802, the magnetoresistance circuit 804, and the magnetoresistance circuit 808, respectively. In an alternate embodiment, the sensitivity adjust memory 818 can provide sensitivity adjust values to a digital-to-analog converter 828, which can sequentially adjust gains of the amplifiers 834, 830, 832, resulting in a sensitivity adjustment of the magnetic field sensing elements.
A chopping modulator 836 can be the same as or similar to the chopping modulator 226 of
A time division multiplexing module 840 can be coupled to receive signals from the amplifiers 830, 832 and from the switched capacitor notch filter 838. In operation, by way of a sample clock signal, Sclk, which can be the same as or similar to the sample clock signals of
Other portions of the magnetic field sensor 800 can be the same as or similar to portions of the magnetic field sensor 200 of
While four phase chopping as described herein, it will be recognized that chopping can use more than four phases or fewer than four phases, in which case the chopping clocks can have more than the number of pulses shown or fewer than the number of pulses shown, accordingly.
Referring now to
While one particular form of magnetoresistance circuit 900 is shown, there are many forms of magnetoresistance circuits, in the form of the magnetoresistance circuit can depend on the type of magnetoresistance elements used.
Referring now to
The power and clocking circuit can include a ramp generator 1002 that provides a ramp signal 1002a, to a sample and hold module 1004. The sample and hold module 1004 provides a sample and hold signal 1004a, which is a sample and held version of the ramp signal 1002a, to a voltage controlled oscillator (VCO) chopping clock module 1006. The voltage controlled chopping clock module 1006 is configured to generate a chopping clock that has a variable frequency Fchopalt1.
In operation, upon each on state (e.g., high state) of the Pclk signal (e.g., a signal 300 of
The upward (and/or downward) steps in frequency can be equal steps or unequal steps.
The varying frequency Fchopalt1 has advantages in rejecting possible noise signals that may occur in the magnetic field sensors 200, 800 of
Benefits of having a chopping frequency that changes are described, for example, in U.S. patent application Ser. No. 12/845,115, file Jul. 28, 2010, and entitled “MAGNETIC FIELD SENSOR WITH IMPROVED DIFFERENTIATION BETWEEN A SENSED MAGNETIC FIELD AND A NOISE SIGNAL,” which is assigned to the assignee of the present invention and which is incorporated by reference herein in its entirety.
Referring now to
The power and clocking circuit 1100 can include an analog-to-digital converter 1102 coupled to receive the signal 228a from the switched capacitor filter 228 of
The analog-to-digital converter 1102 is configured to generate a digital signal 1102a, representative of amplitudes of magnetic field signals generated by the three magnetic field sensing elements of
The power clocking circuit 1100 can also include registers 1104 coupled to receive and store the digital signal 1102a, from a plurality of samples of the signals from the magnetic field sensing elements, i.e., associated with a plurality of the Pclk high states (see, e.g., a signal 300 of
A digital signal processor 1106 can be coupled to receive the plurality of values 1104a from the registers 1104. The digital signal processor can include registers 1107 that can provide a control signal 1106a that can speed up or slow down an oscillator 1108.
The registers 1104, the registers 1107, and the oscillator 1108 can remain continually powered on by way of the voltage Vreg1.
In operation, the digital signal processor can determine how fast the magnetic field experienced by the magnetic field sensing elements of
It should be appreciated that the techniques shown and described above in conjunction with
While
Referring to
The DSP (digital signal processor) 1256 provides binary signals 1270 and 1280. In one example, the binary signal 1270 is a warning signal that indicates (e.g., a “1”) if the magnitude of the vector sum
is greater than a threshold hold value corresponding to a particular magnetic field magnitude. In one example, the threshold value may be adjustable (e.g., by a user).
In one example, the binary signals 1280 may be transmitted using an n bit (n>0) signal that indicates the value of the vector sum
in binary form.
The DSP 1256 may also output a signal to a DAC (digital-to-analog converter) 1258 and the DAC 1258 outputs a signal 120, which is an analog signal indicating the value of the vector sum
In some examples, instead of taking the sum of the squares and the square root of the sum, the DSP 1256 converts the magnetic signals in the x, y and z directions to digital values and compares them to a table which indicates if the x, y, and z coordinates relate to a point outside of a sphere. In some examples, where only two coordinate axes are used, the DSP converts the magnetic signals to digital values and compares them to a table which indicates if the coordinates relate to a point outside of a circle. In further examples, the lookup table methodology is not limited to “circles” or “spheres” but can be used to implement any arbitrary or predetermined response desired. In other examples, a threshold may vary as a function of the phase of the resultant vector and therefore may describe any shape in 2D or 3D space.
Referring to
Process 1300 receives a second signal corresponding to magnetic field in y-direction (1306). For example, the vertical Hall element 204 generates a second magnetic field signal (e.g., differential signals 212a, 212b) that is received by the processor 1202 after chopping.
Process 1300 receives a third signal corresponding to magnetic field in z-direction (1310). For example, the planar Hall element 202 generates a second magnetic field signal (e.g., differential signals 214a, 214b) that is received by the processor 1202.
Process 1300 generates a magnitude signal corresponding to the vector sum (1314). For example, the processor 1202 generates a magnitude signal 1210 corresponding to the vector sum of the first, second and third magnetic field signals.
Process 1300 sends a warning signal if the magnitude signal is above a threshold (1316). For example, the magnitude signal 1210 is sent to a comparator 1220 to compare the signal to a signal 1216 corresponding to a magnetic field threshold value. If the magnitude signal 1210 exceeds the signal 1216 a warning signal 1230 is generated.
Referring to
The processes described herein (e.g., process 1300) are not limited to use with the hardware and software of
The processes described herein are not limited to the specific examples described. For example, one of ordinary skill in the art would recognize that the techniques described herein may be used using only two of the three Cartesian axes. In other examples, the process 1300 is not limited to the specific processing order of
The processing blocks (for example, in the process 1300) associated with implementing the system may be performed by one or more programmable processors executing one or more computer programs to perform the functions of the system. All or part of the system may be implemented as, special purpose logic circuitry (e.g., an FPGA (field-programmable gate array) and/or an ASIC (application-specific integrated circuit)). All or part of the system may be implemented using electronic hardware circuitry that include electronic devices such as, for example, at least one of a processor, a memory, a programmable logic device or a logic gate.
All references cited herein are hereby incorporated herein by reference in their entirety.
Elements of different embodiments described herein may be combined to form other embodiments not specifically set forth above. Various elements, which are described in the context of a single embodiment, may also be provided separately or in any suitable subcombination. Other embodiments not specifically described herein are also within the scope of the following claims.
This application is a continuation-in-part of application of U.S. patent application Ser. No. 14/277,218, filed May 14, 2014, entitled “MAGNETIC FIELD SENSOR FOR DETECTING A MAGNETIC FIELD IN ANY DIRECTION,” which claims the benefit under 35 U.S.C. §119(e) of U.S. Provisional Application No. 61/827,280 filed May 24, 2013. The applications cited in this paragraph are incorporated herein by reference in their entirety.
Number | Name | Date | Kind |
---|---|---|---|
3846697 | Cila et al. | Nov 1974 | A |
4204158 | Ricouard et al. | May 1980 | A |
4296410 | Higgs et al. | Oct 1981 | A |
4349814 | Akehurst | Sep 1982 | A |
4355209 | Sabon | Oct 1982 | A |
4745363 | Carr et al. | May 1988 | A |
4761569 | Higgs | Aug 1988 | A |
4859941 | Higgs et al. | Aug 1989 | A |
4966041 | Miyazaki | Oct 1990 | A |
5402064 | Eck et al. | Mar 1995 | A |
5442283 | Vig et al. | Aug 1995 | A |
5493690 | Shimazaki | Feb 1996 | A |
5541562 | Fletcher et al. | Jul 1996 | A |
5570016 | Schroeder et al. | Oct 1996 | A |
5629622 | Scampini | May 1997 | A |
5666410 | McLane | Sep 1997 | A |
5686894 | Vig et al. | Nov 1997 | A |
5789915 | Ingraham | Aug 1998 | A |
5861796 | Benshoff | Jan 1999 | A |
5867021 | Hancock | Feb 1999 | A |
6014008 | Hartzell et al. | Jan 2000 | A |
6035211 | Rabe et al. | Mar 2000 | A |
6356741 | Bilotti et al. | Mar 2002 | B1 |
6622012 | Bilotti et al. | Sep 2003 | B2 |
7085119 | Bilotti et al. | Aug 2006 | B2 |
7307824 | Bilotti et al. | Dec 2007 | B2 |
7768083 | Doogue et al. | Aug 2010 | B2 |
7990209 | Romero | Aug 2011 | B2 |
8222888 | David et al. | Jul 2012 | B2 |
8564285 | Romero et al. | Oct 2013 | B2 |
8629520 | Doogue et al. | Jan 2014 | B2 |
8680846 | Cesaretti et al. | Mar 2014 | B2 |
20030107510 | Gartner et al. | Jun 2003 | A1 |
20060097715 | Oohira et al. | May 2006 | A1 |
20090251316 | Mamourian et al. | Oct 2009 | A1 |
20110031968 | Cantave et al. | Feb 2011 | A1 |
20110234218 | Lagouge | Sep 2011 | A1 |
20110248790 | Tsvey | Oct 2011 | A1 |
20130057257 | Friedrich et al. | Mar 2013 | A1 |
20140009144 | Romero | Jan 2014 | A1 |
20140225598 | Romero et al. | Aug 2014 | A1 |
20140239942 | Schaaf | Aug 2014 | A1 |
20140347044 | Monreal et al. | Nov 2014 | A1 |
Number | Date | Country |
---|---|---|
10 2006 037 226 | Feb 2008 | DE |
0 631 413 | Dec 1994 | EP |
62-48160 | Mar 1987 | JP |
7-15493 | Jan 1995 | JP |
9-294060 | Nov 1997 | JP |
7-83699 | Mar 1998 | JP |
WO 2014189733 | Nov 2014 | WO |
Entry |
---|
PCT International Preliminary Report on Patentability and Written Opinion of the ISA dated Dec. 3, 2015; For PCT Pat. App. No. PCT/US2014/037967; 14 pages. |
Reponse filed on Oct. 4, 2016 to Office Action dated Jul. 21, 2016, regarding U.S. Appl. No. 14/277,218; 18 pages. |
PCT Search Report and Written Opinion of the ISA for PCT/US2016/044957, dated Oct. 13, 2016; 20 pages. |
Sander et al., “Isotropic 3D Silicon Hall Sensor”, from MEMS, 2015, Estoril, Portugal, Jan. 18, 2015; 4 pages. |
Office Action dated Dec. 23, 2016 for U.S. Appl. No. 14/277,218; 24 pages. |
Allegro Data Sheet 3235; “Dual-Output Hall-Effect Switch;” Jan. 1995; 9 Pages. |
AsahiKasei; “AK8777B Hall Effect IC for Pulse Encoders;” Distributed by GMW Associates; Sep. 2012; 10 Pages. |
Kejik et al.; “First Fully CMOS-Integrated 3D Hall Probe;” 13th International Conference on Solid-State Sensors, Actuators and Microsystems; Jun. 5-9, 2005; 4 Pages. |
Office Action dated Jul. 9, 2001 for corresponding U.S. Appl. No. 09/338,668; 8 Pages. |
Response to Office Action dated Jul. 9, 20101 corresponding to U.S. Appl. No. 09/338,668; Response filed Oct. 9, 2010; 20 Pages. |
Office Action dated Dec. 31, 2002 corresponding to for U.S. Appl. No. 09/997,148; 8 Pages. |
Terminal Disclaimer dated Mar. 31, 2003 corresponding to U.S. Appl. No. 09/997,148; 2 Pages. |
Response to Office Action dated Dec. 31, 2002 corresponding to U.S. Appl. No. 09/997,148; Response filed Mar. 31, 2003; 14 Pages. |
Ramsden, “Hall-Effect Sensors: Theory and Applications;” ISBN: 978-0-75-067934-3; XP055039221; Jan. 1, 2006; 253 Pages. |
PCT International Search Report and Written Opinion dated Sep. 4, 2014 corresponding to PCT International Application No. PCT/US2014/037967; 18 Pages. |
Monreal et al., “Magnetic Field Sensor for Detecting a Magnetic Field in Any Direction Above Thresholds;” filed May 14, 2014 corresponding to U.S. Appl. No. 14/277,218; 35 Pages. |
Preliminary Amendment dated Nov. 6, 2014 corresponding to U.S. Appl. No. 14/277,218; 12 Pages. |
U.S. Appl. No. 14/277,218; 150 Pages. |
U.S. Appl. No. 14/277,218; 98 Pages. |
Office Action dated Jul. 21, 2016 for U.S. Appl. No. 14/277,218; 16 pages. |
Response (with amended claims) to European Office Action dated Jan. 11, 2016 for European Pat. App. No. 14730350.7; Response filed Jul. 7, 2016; 22 pages. |
Response to Dec. 23, 2016 Office Action from U.S. Appl. No. 14/277,218, filed Feb. 14, 2017; 18 Pages. |
Notice of Allowance dated Apr. 12, 2017 for U.S. Appl. No, 14/277,218; 6 pages. |
Number | Date | Country | |
---|---|---|---|
20150354985 A1 | Dec 2015 | US |
Number | Date | Country | |
---|---|---|---|
61827280 | May 2013 | US |
Number | Date | Country | |
---|---|---|---|
Parent | 14277218 | May 2014 | US |
Child | 14830098 | US |