Full-duplex communications, in which a transmitter and a receiver of a transceiver operate simultaneously on the same frequency band, is drawing significant interest for emerging 5G communication networks due to its potential to double network capacity compared to half-duplex communications. Additionally, there are several efforts underway to include simultaneous transmit and receive functionality in the next generation phased array radar systems, especially in commercial automotive radars which can be an enabler technology for future connected or driverless cars. However, one of the biggest challenges from an implementation perspective is the antenna interface.
One way in which an antenna interface for a full-duplex transceiver can be implemented is using a non-reciprocal circulator. Reciprocity in electronics is a fundamental property of linear systems and materials described by symmetric and time-independent permittivity and permeability tensors. Non-reciprocity causes signals to travel in only one direction. For example, non-reciprocity in a circulator causes signals to travel in only one direction through the circulator. This directional signal flow enables full-duplex wireless communications because signals from the transmitter are only directed toward the antenna (and not the receiver) and received signals at the antenna are only directed toward the receiver (and not the transmitter). Moreover, the receiver is isolated from signals from the transmitter, preventing desensitization and possible breakdown of the receiver due to the high-power transmitted signal.
Conventionally, non-reciprocal circulators have been implemented using ferrite materials, which are materials that lose their reciprocity under the application of an external magnetic field. However, ferrite materials cannot be integrated into CMOS IC technology. Furthermore, the need for an external magnet renders ferrite-based circulators bulky and expensive.
Accordingly, new mechanisms for implementing non-reciprocity in circuits is desirable.
Turning to
As can be seen, the signals at ωin−2ωm and ωin+2ωm are 180° out of phase and thus cancel out. Also, the signals at ωin all have the same phase, and thus add up into a single signal with a phase shift of ϕ−ϕ1, or 90°−ϕ1. This is shown in graph 104 of
Turning to
As can be seen, the signals at ωin−2ωm and ωin+2ωm are 180° out of phase and thus cancel out. Also, the signals at ωin all have the same phase, and thus add up into a single signal with a phase shift of −ϕ−ϕ1, or −90°−ϕ1. This is shown in graph 114 of
As can be seen in
The scattering parameter matrix of the configuration shown in
where: j is the square root of −1. The −ϕ in the term on the top right corner and +ϕ in the term on the bottom left corner show that the phase is non-reciprocal.
Turning to
As can be seen, the signals at ωin−2ωm and ωin−2ωm are 180° out of phase and thus cancel out. Also, the signals at coin all have the same phase, and thus add up into a single signal with a phase shift of ϕ−ϕ1, or 45°−ϕ1. This is shown in graph 204 of
Turning to
As can be seen, the signals at ωin−2ωm, ωin, and ωin+2ωm are 180° out of phase and thus cancel out. This is shown in graph 214 of
As can be seen in
Another use of the structures of
Turning to
As shown in
Each of the transmission lines in
Transmission lines 308, 310, 312, 322, and 324 can be implemented in any suitable manner. For example, in some embodiments, one or more of the transmission lines can be implemented as C-L-C pi-type lumped sections. In some other embodiments, they may be implemented as truly distributed transmission lines.
The passive mixers can be driven by signals as shown in
In some embodiments, mixers 314, 316, 318, and 320 shown in
The switches in the switch groups can be implemented in any suitable manner. For example, in some embodiments, the switches can be implemented using NMOS transistors, PMOS transistors, both NMOS and PMOS transistors, or any other suitable transistor or any other switch technology.
Switch groups 414, 416, 418, and 420 can be controlled by local oscillator signals LO1, LO2, LO1Q, and LO2Q, respectively, as shown in
Turning to
Turning to
The circuits described herein can be implemented in any suitable technology in some embodiments. For example, in some embodiments, these circuits can be implemented in any semiconductor technology such as silicon, Gallium Nitride (GaN), Indium phosphide (InP), Gallium arsenide (GaAs), etc. More particularly, for example, in some embodiments, the circuits can be implemented in IBM 45 nm SOI CMOS process.
In
Although the disclosed subject matter has been described and illustrated in the foregoing illustrative implementations, it is understood that the present disclosure has been made only by way of example, and that numerous changes in the details of implementation of the disclosed subject matter can be made without departing from the spirit and scope of the disclosed subject matter. Features of the disclosed implementations can be combined and rearranged in various ways.
This invention was made with government support under contract FA8650-14-1-7414 awarded by the Air Force Materiel Command. The government has certain rights in the invention.
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20190305397 A1 | Oct 2019 | US |
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