Magnetic media capable of improving magnetic properties and thermal management for heat-assisted magnetic recording

Information

  • Patent Grant
  • 9177585
  • Patent Number
    9,177,585
  • Date Filed
    Wednesday, December 4, 2013
    10 years ago
  • Date Issued
    Tuesday, November 3, 2015
    8 years ago
Abstract
A method and system provide a magnetic recording media usable in a heat assisted magnetic recording (HAMR) disk drive. The magnetic recording media includes a magnetic recording layer, a crystalline underlayer, and a crystalline heat sink layer. The crystalline underlayer is between the crystalline heat sink layer and the magnetic recording layer. The magnetic recording layer stores magnetic data. The crystalline underlayer has a first crystal structure. The crystalline heat sink layer has a second crystal structure.
Description
BACKGROUND

Conventional magnetic recording disk drives include a slider attached to a suspension and a media such as a disk. The slider typically includes a magnetic read transducer (reader) and a magnetic write transducer (writer). The writer magnetically records data as bits along a tracks in the media. The reader reads data back from the media.


The trend in magnetic recording is to higher areal densities. For example, densities of 1 Tbit/in2 and higher are desired. To read, write and store data at such areal densities, the reader, writer, and media have evolved. For example, tunneling magnetoresistance (TMR) sensors may be used to read higher density media with sufficiently high signals and heat assisted magnetic recording (HAMR) writers may utilize laser light to heat regions of the media to temperatures near and/or above the Curie temperature of the media. This allows the writer to magnetically record data to the media at lower magnetic fields. Similarly, magnetic media have been developed to store data at higher areal densities.


Although such conventional magnetic recording disk drives function, there are drawbacks. For example, for areal densities of 1 Tbit/in2, an average grain size for a bit may be desired to be less than six nanometers. Media having the desired grain size, thermal stability and other magnetic properties are thus desired. Accordingly, what is needed is a system and method for improving the performance of a magnetic recording disk drive at higher areal densities.





BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS


FIG. 1 depicts a side view of a HAMR magnetic recording disk drive.



FIG. 2 depicts an exemplary embodiment of a magnetic recording media that may be usable in a HAMR disk drive.



FIG. 3 depicts another exemplary embodiment of a magnetic recording media that may be usable in a HAMR disk drive.



FIG. 4 depicts a flow chart of an exemplary embodiment of a method for providing magnetic recording media usable in a HAMR disk drive.



FIG. 5 depicts a flow chart of another exemplary embodiment of a method for fabricating a magnetic recording media usable in a HAMR disk drive.





DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS


FIG. 1 depicts a side view of an exemplary embodiment of a portion of a HAMR disk drive 100 including a write transducer 120. For clarity, FIG. 2 is not to scale. For simplicity not all portions of the HAMR disk drive 100 are shown. In addition, although the HAMR disk drive 100 is depicted in the context of particular components other and/or different components may be used. For example, circuitry used to drive and control various portions of the HAMR disk drive 100 is not shown. For simplicity, only single components 102, 110, 120 and 150 are shown. However, multiples of each components 102, 110, 120, and/or 150 and their sub-components, might be used.


The HAMR disk drive 100 includes a slider 110, a HAMR transducer 120, a laser assembly 130 and media 150. Additional and/or different components may be included in the HAMR disk drive 100. Although not shown, the slider 110, and thus the laser assembly 130 and HAMR transducer 120 are generally attached to a suspension (not shown). The laser assembly 130 includes a submount 132 and a laser 134. The submount 132 is a substrate to which the laser 134 may be affixed for improved mechanical stability, ease of manufacturing and better robustness. The laser 134 may be a chip such as a laser diode.


The HAMR transducer 120 is fabricated on the slider 110 and includes an air-bearing surface (ABS) proximate to the media 150 during use. In general, the HAMR transducer 120 includes a write transducer and a read transducer. However, for clarity, only the write portion of the HAMR head 120 is shown. The HAMR head 120 includes a waveguide 122, write pole 124, coil(s) 126, near-field transducer (NFT) 128. The waveguide 122 guides light from the laser 134 to the NFT 128, which resides near the ABS. The NFT 128 utilizes local resonances in surface plasmons to focus the light to magnetic recording media 150. At resonance, the NFT 128 couples the optical energy of the surface plasmons efficiently into the media 150 with a confined optical spot which is much smaller than the optical diffraction limit. This optical spot can rapidly heat a region of the recording medium 150 to near or above the Curie point of the recording media layer (not explicitly depicted in FIG. 1). High density bits can be written on a high coercivity medium with the pole 124 energized by the coils 126 to a modest magnetic field. The write pole 124 is thus formed of high saturation magnetization material(s) such as CoFe. The media 150 is configured to be usable at higher recording densities and, in some embodiments, to be used in the HAMR disk drive 100.



FIG. 2 depicts an exemplary embodiment of the magnetic media 150 usable in a disk drive such as the disk drive 100. For clarity, FIG. 2 is not to scale. For simplicity not all portions of the magnetic recording media are shown. For example, a substrate on which the magnetic recording media 150 is fabricated is not shown. Referring to FIGS. 1-2, the magnetic recording media includes a magnetic recording layer 152, a crystalline underlayer 154 and a crystalline heat sink layer 156. The crystalline heat sink layer is closer to the substrate (not shown) than the crystalline underlayer 154. The crystalline underlayer 154 is between the recording layer 152 and the crystalline heat sink layer 156. In other embodiments other and/or additional layers may be present. For example, although not shown in FIG. 2, an overcoat layer is generally used. The overcoat layer would reside on the magnetic recording layer 152 and between the magnetic recording layer 152 and the slider 110. Other layer(s) may also reside between the layers 152, 154 and 156 shown. However, the relationships between the layers 152, 154 and 156 may be preserved. Stated differently, the crystalline heat sink layer 156 is closer to the substrate than the crystalline underlayer 154. Similarly, the crystalline underlayer 154 is closer to the substrate than the magnetic recording layer 152. The magnetic recording layer 152 is also closer to the slider 110 than the layers 154 and 156.


The magnetic recording layer 152 stores magnetic data recorded by the transducer 120. Thus, the magnetic recording layer may be desired to have a small grain size such as less than ten nm and be thermally stable in the media 150. In some embodiments, the magnetic recording layer 152 includes FePt. For example, FePt having an L10 crystal structure may be used as the recording layer 152. The FePt may also have a (001) orientation. In such embodiments, the magnetic recording layer 152 may have a high perpendicular anisotropy. In other embodiments other and/or different materials may be used for the magnetic recording layer 152.


The crystalline underlayer 154 and crystalline head sink layer 156 each has a crystal structure. Stated differently, each of the layers 154 and 156 has an ordered lattice structure (as opposed to an amorphous layer). In some embodiments, the crystal structures are the same. For example, both the crystalline underlayer 154 and the crystalline heat sink layer 156 may be body-centered cubic (BCC). In some embodiments, the crystalline underlayer 154 and the crystalline heat sink layer 156 each has an orientation. In some embodiments, the crystallographic orientation of the layers 154 and 156 may be the same. For example, the layers 154 and 156 may each have a (200) orientation.


The heat sink layer 156 may be configured not only to have the desired crystal structure, but also to function as a heat sink. Thus, the thermal properties of the media 150 may be managed at least in part using the heat sink layer 156. The thermal conductivity of the heat sink layer 156 may be desired to be high. In some embodiments, the thermal conductivity of the heat sink layer 156 is at least fifty Watts/mK. In some such embodiments, the heat sink layer 156 has a thermal conductivity of at least seventy Watts/mK. In some embodiments, the above numerical values for thermal conductivity are as measured using a pump probe method, otherwise known as a time domain thermo-reflectance (TDTR) technique. In other embodiments other methods and other numerical values may be used. The heat sink layer 156 may include material(s) such as Cu, Ag, Au, V, Cr, Nb Ru, W and/or Mo. In some embodiments, the heat sink layer 156 includes W or Mo. However, if Cu, Ag, and/or Au are used, such materials may be present as only part of the heat sink layer 156. For example, the heat sink 156 may be a multilayer heat sink. The Au, Ag, and/or Cu may be a seed layer or one of the layers in the multilayer heat sink layer 156. In contrast, if W or Mo are used, the heat sink layer 150 may consist of only W and/or Mo. In some embodiments, the heat sink layer 156 may be at least forty nanometers thick and not more than one hundred twenty nanometers thick. In some such embodiments, the heat sink layer 156 may be at least eighty and not more than one hundred nanometers thick.


The thermal conductivity of the crystalline underlayer 154 is also configured to manage the thermal properties of the magnetic recording media 150. The thermal conductivity of the crystalline underlayer 154 may be less than that of the heat sink layer. However, the thermal conductivity of the crystalline underlayer 154 may also be sufficiently high that the crystalline underlayer does not act as a thermal barrier. In some embodiments, the crystalline underlayer 154 has a thermal conductivity of at least ten W/mK. In some such embodiments, the thermal conductivity of the crystalline underlayer 154 is at least twenty W/mK. The crystalline underlayer 154 may, for example, include one or more of CrMo, CrV, Cr, MoTa, MoW, MoV, CrW, Mo and RuAl. As discussed above, the numerical values of the thermal conductivities discussed herein may be measured using TDTR. Thus, measurements by other methods may result in differences in the experimental values of thermal conductivities discussed herein.


The magnetic media 150 may have improved performance. The crystal structure of the crystalline underlayer 154 may result in an improved crystal structure of the magnetic recording layer 152. This is particularly true if an orientation control layer (not shown in FIG. 2) is used between the crystalline underlayer 154 and the magnetic recording layer 152. Recently developed magnetic recording media may use an amorphous underlayer for growth of the orientation control layer. Such an amorphous underlayer is desired to provide a smooth surface for growth of the orientation control layer. In order to provide a smooth surface, the amorphous underlayer is desired to be relatively thick. However, even for a thicker amorphous underlayer and orientation control layer, the crystal structure and orientation of the magnetic recording layer 152 may not be as desired. In contrast, the crystalline underlayer 154 may provide the desired growth template for the magnetic recording layer 152. For example, a magnetic recording layer 152 including FePt having an L10 structure and a (001) orientation may be better grown on a BCC crystalline underlayer 154 having a (200) orientation. Because the magnetic recording layer 152 has a desired crystal structure, the magnetic properties of the magnetic recording layer 152 may also be closer to those desired. For example, the perpendicular anisotropy may be enhanced. Thus, performance of the magnetic recording media 150 at higher densities may be improved.


Better thermal management of the magnetic recording media 150 may be attained. The amorphous underlayer described above may have a thermal conductivity of ten W/mK or less. As a result, the amorphous underlayer may act as a thermal barrier between the magnetic recording layer 152 and the heat sink layer. In contrast, the crystalline underlayer 154 has a higher thermal conductivity. As a result, heat may be better conducted from the magnetic recording layer 152 to the crystalline heat sink layer 156. Thus, a larger thermal gradient may be obtained in the magnetic recording media 150. The region of the magnetic recording media 150 heated by the laser 134 (thermal spot size) may be better confined. Thus, performance of the magnetic recording media 150 at higher areal densities may be improved.



FIG. 3 depicts an exemplary embodiment of the magnetic media 150′ usable in a disk drive such as the disk drive 100. For clarity, FIG. 3 is not to scale. For simplicity not all portions of the magnetic recording media are shown. The magnetic media 150′ is analogous to the magnetic recording media 150 depicted in FIG. 2. Consequently, similar components have analogous labels. The magnetic recording media 150′ includes a magnetic recording layer 152, a crystalline underlayer 154 and a crystalline heat sink layer 156 analogous to the magnetic recording layer 152, crystalline underlayer 154 and crystalline heat sink layer 156, respectively, depicted in FIG. 2. Also shown are an overcoat layer 158, an orientation control layer 160, a seed/thermal control layer 162, an adhesion layer 164 and a substrate 166. The substrate 166 may be glass, but may also be another material.


The adhesion layer 164 may be used to help ensure that the remaining layers 162, 156, 154, 160 and 152 do not delaminate from the substrate 166. For example, the adhesion layer may include NiTa, CrTa, CrTi and/or Ta. The seed layer/thermal control layer 162 may include one or more of RuAl, RuTi, Cr and NiAl. In some embodiments, the seed/thermal control layer 162 provides the desired growth template for the crystalline heat sink layer 156. Thus, the layer 162 functions as a seed layer. Thus, the layer 162 may allow for the crystalline heat sink layer 156 to have the desired crystal structure and orientation. In some embodiments, the layer 162 improves the growth of the crystalline heat sink layer 156 has a B2 or a BCC structure having a (200) orientation. In some embodiments, the layer 162 aids in thermal management of the media 150′. For example, the thermal conductivity of the layer 162 may be configured as desired. In some embodiments, the thermal conductivity is within the range of the thermal conductivities of RuAl, RuTi, Cr and NiAl. In other embodiments, the layer 162 aids both in growth of the crystalline heat sink layer 156 having the desired structure and orientation and in thermal management for the media 150′. Thus, the seed/thermal control layer 162 may function as a seed layer for the layer 156, a thermal control layer for the media 150′, or both.


The crystalline heat sink layer 156 is configured not only to function as a heat sink, but also to have the desired crystal structure. The thickness of the crystalline heat sink layer 156 may be in the range described above. The thermal conductivity of the heat sink layer is also desired to be high. In some embodiments, the thermal conductivity of the crystalline heat sink layer 156 is in the range described above. The crystalline heat sink layer 156 may also have the desired crystal structure and orientation. In some embodiments, the crystalline heat sink layer 156 has a B2 or BCC crystal structure and a (200) orientation. For example, the heat sink layer 156 may include Cu, Ag, Au, V, Cr, Nb, Ru, W and/or Mo. In some embodiments, the heat sink layer 156 includes W or Mo. If Cu, Ag, and/or Au are used, such materials may be present as only part of the heat sink layer 156.


The crystalline underlayer 154 also has a crystal structure. In some embodiments, the crystalline underlayer 154 has a BCC crystal structure and a (200) orientation. Thus, the crystal structures and orientations of the layers 154 and 156 may be the same. The thermal conductivity of the crystalline underlayer 154 may be less than that of the heat sink layer. In some embodiments, the crystalline underlayer 154 has a thermal conductivity of at least ten W/mK. In some such embodiments, the thermal conductivity of the crystalline underlayer 154 is at least twenty W/mK. The crystalline underlayer 154 may, for example, include one or more of CrMo, CrV, Cr, MoTa, MoW, MoV, CrW, Mo and RuAl. In some such embodiments, the crystalline underlayer 154 may be not more than 25 nm thick.


The orientation control layer 160 is used to provide a growth template for the desired orientation and crystal structure of the magnetic recording layer 152. In some embodiments, the magnetic recording layer 152 includes FePt. For example, FePt having an L10 crystal structure and a (001) orientation may be used as the recording layer 152. The orientation control layer 160 may assist growth of the magnetic recording layer 152 in achieving this crystal structure and orientation. In some embodiments, the orientation control layer 160 is crystalline MgO having a (200) orientation. The crystalline underlayer 154 may function as a seed layer for the orientation control layer 160. Thus, a particular lattice parameter, crystal structure and orientation of the crystalline underlayer layer 154 are desired to match that of the orientation control layer 160. The lattice parameter of the crystalline underlayer 154 may be desired to differ from the lattice parameter of the orientation control layer 160 by not more than ten percent. In some such embodiments, this difference is not more than four percent. In other embodiments, the lattice parameter mismatch is not more than two percent. Further, the orientation control layer 160 may be relatively thin. In some such embodiments, the orientation control layer 160 may be not more than 25 nm thick.


The magnetic media 150′ may have improved performance. Use of the layer 164 may improve the crystal structure of the crystalline heat sink layer 156 and/or thermal management in the media 150′. As discussed above, the crystal structure of the crystalline underlayer 154 may result in an improved crystal structure of the magnetic recording layer 152. This is particularly true for the magnetic media 150′, which includes the orientation control layer 160. The crystalline underlayer 154 may provide the desired growth template for the orientation control layer 160. In turn, the orientation control layer 160 provides a growth template for the desired crystal structure and orientation for the magnetic recording layer 152. Because the magnetic recording layer 152 has a desired crystal structure and orientation, the magnetic properties of the magnetic recording layer 152 may also be closer to those desired. Because of the use of the crystalline underlayer 154, this improvement may be obtained for a thinner orientation control layer 160. Consequently, a better path for heat to flow to the crystalline heat sink layer 156 may be provided. Thermal management of the media 150′ may be improved. The thermal conductivity of the crystalline underlayer 154 may be in the ranges described above. As a result, heat may be better conducted between the magnetic recording layer 152 and the heat sink layer 156. Thus, a larger thermal gradient may be obtained in the magnetic recording media 150. The region of the magnetic recording media 150 heated by the laser 134 (thermal spot size) may be better confined. Smaller bits may be written and less laser power consumed. Thus, performance of the magnetic recording media 150′ may be improved.



FIG. 4 depicts an exemplary embodiment of a method 200 for providing a magnetic recording media such as the media 150. For simplicity, some steps may be omitted, interleaved, and/or combined. The method 200 is also described in the context of providing a magnetic recording disk drive 100 and media 150 depicted in FIGS. 1-2. However, the method 200 may be used to fabricate multiple magnetic recording heads at substantially the same time. The method 200 may also be used to fabricate other magnetic recording media. The method 200 is also described in the context of particular layers. A particular layer may include multiple materials and/or multiple sub-layers. The method 200 also may start after formation of other portions of the magnetic recording media. For example, the method 200 may start after a portion of the media 150 has been fabricated.


Referring to FIGS. 2 and 4, the crystalline heat sink layer 156 is provided, via step 202. Step 202 may include depositing one or more of Cu, Ag, Au, V, Cr, Nb, W, Mo and Ru. The Cu, Ag and/or Au are used in conjunction with other materials such as the W, Mo, V, Cr, and Nb. The crystalline underlayer 154 is provided, via step 204. Step 204 may include depositing one or more of CrMo, CrV, Cr, MoTa, MoW, MoV, CrW, Mo and RuAl. The magnetic recording layer 154 may be deposited, via step 206. Step 206 may include depositing a material including FePt.


Using the method 200, the magnetic disk drive 100 and magnetic recording media 150 may be provided. Thus, the benefits of the magnetic recording media 150 and magnetic recording transducer 120 may be achieved.



FIG. 5 depicts an exemplary embodiment of a method 210 for providing a magnetic recording media such as the media 150′. For simplicity, some steps may be omitted, interleaved, and/or combined. The method 210 is also described in the context of providing a HAMR disk 100 and media 150′ depicted in FIGS. 1 and 3. However, the method 210 may be used to fabricate multiple magnetic recording heads at substantially the same time. The method 210 may also be used to fabricate other magnetic recording media. The method 210 is also described in the context of particular layers. A particular layer may include multiple materials and/or multiple sub-layers. The method 210 also may start after formation of other portions of the magnetic recording media 150′.


Referring to FIGS. 3 and 5, the adhesion layer 164 and seed layer 162 are provided on the substrate 166 via steps 212 and 214, respectively. The crystalline heat sink layer 156 is provided, via step 216. Step 216 may include depositing one or more of Cu, Ag, Au, V, Cr, Nb, W, Mo and Ru. The Cu, Ag and Au are, however, used for only part of the heat sink layer 156. The crystalline underlayer 154 is provided, via step 218. Step 218 may include depositing one or more of CrMo, CrV, Cr, MoTa, MoW, MoV, CrW, Mo and RuAl. The crystalline MgO orientation control layer 160 is deposited, via step 220. The magnetic recording layer 154 may be deposited, via step 222. Step 222 may include depositing a material including FePt. Fabrication of the magnetic recording media 150/150′ may then be completed. For example, the overcoat layer 158 may also be provided after step 222.


Using the method 210, the magnetic disk drive 100 and magnetic recording media 150′ may be provided. Thus, the benefits of the magnetic recording media 150′ and disk drive 100 may be achieved.

Claims
  • 1. A magnetic recording media usable in a heat assisted magnetic recording (HAMR) disk drive, the magnetic recording comprising: a magnetic recording layer for storing magnetic data;a crystalline underlayer having a first crystal structure, the crystalline underlayer including at least one of CrMo, CrV, Cr, MoTa, MoW, MoV, CrW, Mo and RuAl and being a single layer;an orientation control layer between the magnetic recording layer and the crystalline underlayer, the crystalline underlayer having a first lattice parameter, the orientation control layer having a second lattice parameter that differs from the first lattice parameter by not more than ten percent; anda crystalline heat sink layer having a second crystal structure, the crystalline underlayer being between the crystalline heat sink layer and the magnetic recording layer, the crystalline heat sink layer consisting of at least one of Au, V, Cr, Nb and Ru;wherein the crystalline underlayer adjoins and shares a first interface with the crystalline heat sink layer and wherein the orientation control layer adjoins and shares a second interface with the crystalline underlayer.
  • 2. The magnetic recording media of claim 1 wherein the first crystal structure is the same as the second crystal structure.
  • 3. The magnetic recording media of claim 2 wherein the first crystal structure is body-centered cubic.
  • 4. The magnetic recording media of claim 1 wherein the crystalline underlayer has a thermal conductivity of at least 10 W/mK.
  • 5. The magnetic recording media of claim 4 wherein the thermal conductivity is at least 10 W/mK as measured by time domain thermo-reflectance.
  • 6. The magnetic recording media of claim 5 wherein the thermal conductivity is at least 20 W/mK as measured by the time domain thermo-reflectance and wherein the crystalline heat sink layer has a heat sink thermal conductivity greater than the thermal conductivity of the crystalline underlayer.
  • 7. The magnetic recording media of claim 1 wherein the orientation control layer includes crystalline MgO having an orientation of (200).
  • 8. The magnetic recording media of claim 1 wherein the second lattice parameter differs from the first lattice parameter by not more than four percent.
  • 9. The magnetic recording media of claim 8 wherein the second lattice parameter differs from the first lattice parameter by not more than two percent.
  • 10. The magnetic recording media of claim 1 further comprising: an adhesion layer; anda seed layer residing on the adhesion layer and between the adhesion layer and the crystalline heat sink layer.
  • 11. The magnetic recording media of claim 10 wherein the seed layer includes at least one of RuAl, RuTi, Cr and NiAl.
  • 12. A magnetic recording media usable in a heat assisted magnetic recording (HAMR) disk drive, the magnetic recording media comprising: an adhesion layer;a seed layer residing on, adjoining and sharing a first interface with the adhesion layer, the seed layer and including at least one of RuAl, RuTi, Cr and NiAl;a crystalline heat sink layer having a body-centered cubic (BCC) structure, the seed layer being between the adhesion layer and the crystalline heat sink layer, the heat sink layer including at least one of Au, V, Cr, Nb and Ru, the seed layer adjoining and sharing a second interface with the crystalline heat sink layer;a crystalline underlayer having the BCC structure and including at least one of CrMo, CrV, Cr, MoTa, MoW, MoV, CrW, Mo and RuAl, the crystalline underlayer being a single layer and adjoining and sharing a third interface with the crystalline heat sink layer;an orientation control layer including crystalline MgO having a (200) orientation, the crystalline underlayer being between the crystalline heat sink layer and the orientation control layer, the orientation control layer adjoining and sharing a fourth interface with the crystalline underlayer;a magnetic recording layer for storing magnetic data, the magnetic recording layer including FePt having a (001) orientation and adjoining and sharing a fifth interface with the orientation control layer; andan overcoat layer including diamond-like carbon, the magnetic recording layer being between the overcoat layer and the orientation control layer.
  • 13. A heat assisted magnetic recording (HAMR) disk drive comprising: a media including a magnetic recording layer, a crystalline underlayer, an orientation control layer between the magnetic recording layer and the crystalline underlayer and a crystalline heat sink layer, the magnetic recording layer for storing magnetic data, the crystalline underlayer having a first crystal structure, the crystalline heat sink layer having a second crystal structure, the crystalline underlayer being between the crystalline heat sink layer and the magnetic recording layer, the crystalline underlayer having a first lattice parameter, the orientation control layer having a second lattice parameter that differs from the first lattice parameter by not more than ten percent, the crystalline heat sink layer consisting of at least one of Au, V, Cr, Nb and Ru, the crystalline underlayer including at least one of CrMo, CrV, Cr, MoTa, MoW, MoV, CrW, Mo and RuAl and being a single layer, the crystalline underlayer adjoining and sharing a first interface with the crystalline heat sink layer and the orientation control layer adjoining and sharing a second interface with the crystalline underlayer;a laser for providing energy;a slider including a HAMR write transducer, the HAMR transducer having air-bearing surface (ABS), a main pole, a waveguide and at least one coil, the main pole being configured to write to a region of the media, the waveguide being optically coupled with the laser and directing a portion of the energy toward the ABS, the at least one coil for energizing the main pole.
  • 14. A method for fabricating a magnetic recording media usable in a heat assisted magnetic recording (HAMR) disk drive, the method comprising: providing a crystalline heat sink layer having a first crystal structure on a substrate, the crystalline heat sink layer consisting of at least one of Au, V, Cr, Nb and Ru;providing a crystalline underlayer on the crystalline heat sink layer, the crystalline underlayer having a second crystal structure, the crystalline underlayer including at least one of CrMo, CrV, Cr, MoTa, MoW, MoV, CrW, Mo and RuAl and being a single layer;providing an orientation control layer between the magnetic recording layer and the crystalline underlayer, the crystalline underlayer having a first lattice parameter, the orientation control layer having a second lattice parameter that differs from the first lattice parameter by not more than ten percent, the crystalline underlayer adjoining and sharing a first interface with the crystalline heat sink layer and the orientation control layer adjoining and sharing a second interface with the crystalline underlayer; andproviding a magnetic recording layer for storing magnetic data, the crystalline underlayer being between the crystalline heat sink layer and the magnetic recording layer.
  • 15. The method of claim 14 wherein the first crystal structure and the second crystal structure are each body-centered cubic.
  • 16. The method of claim 14 wherein the crystalline underlayer includes at least one of CrMo, CrV, Cr, MoTa, MoW, MoV, CrW, Mo and RuAl.
  • 17. The method of claim 14 further comprising: providing an adhesion layer; andproviding a seed layer residing on the adhesion layer and between the adhesion layer and the crystalline heat sink layer, the seed layer including at least one of RuAl, RuTi, Cr and NiAl; andproviding an orientation control layer between the magnetic recording layer and the crystalline underlayer, the orientation control layer including crystalline MgO having an orientation of (200).
  • 18. A method for fabricating a magnetic recording media usable in a heat assisted magnetic recording (HAMR) disk drive, the method comprising: providing an adhesion layer;providing a seed layer residing on and sharing a first interface with the adhesion layer;providing a crystalline heat sink layer having a first crystal structure on a substrate, the seed layer being between the adhesion layer and the crystalline heat sink layer, the seed layer including at least one of RuAl, RuTi, Cr and NiAl, the seed layer adjoin and sharing a second interface with the crystalline heat sink layer, the crystalline heat sink layer consisting of at least one of Au, V, Cr, Nb and Ru;providing a crystalline underlayer on, adjoining and sharing a third interface with the crystalline heat sink layer, the crystalline underlayer having a second crystal structure and being a single layer;providing an orientation control layer including crystalline MgO having an orientation of (200), the orientation control layer adjoining and sharing a fourth interface with the crystalline underlayer; andproviding a magnetic recording layer for storing magnetic data, the crystalline underlayer being between the crystalline heat sink layer and the magnetic recording layer, the orientation control layer being between the magnetic recording layer and the crystalline underlayer, the magnetic recording layer adjoining the orientation control layer;wherein the crystalline underlayer has a first lattice parameter, the orientation control layer has a second lattice parameter that differs from the first lattice parameter by not more than two percent.
  • 19. The method of claim 14 wherein the crystalline underlayer has a thermal conductivity of at least 10 W/mK as measured by time domain thermo-reflectance.
CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to provisional U.S. Patent Application Ser. No. 61/894,527, filed on Oct. 23, 2013, which is hereby incorporated by reference in its entirety.

US Referenced Citations (396)
Number Name Date Kind
6013161 Chen et al. Jan 2000 A
6063248 Bourez et al. May 2000 A
6068891 O'Dell et al. May 2000 A
6086730 Liu et al. Jul 2000 A
6099981 Nishimori Aug 2000 A
6103404 Ross et al. Aug 2000 A
6117499 Wong et al. Sep 2000 A
6136403 Prabhakara et al. Oct 2000 A
6143375 Ross et al. Nov 2000 A
6145849 Bae et al. Nov 2000 A
6146737 Malhotra et al. Nov 2000 A
6149696 Jia Nov 2000 A
6150015 Bertero et al. Nov 2000 A
6156404 Ross et al. Dec 2000 A
6159076 Sun et al. Dec 2000 A
6164118 Suzuki et al. Dec 2000 A
6200441 Gornicki et al. Mar 2001 B1
6200673 Miyamoto et al. Mar 2001 B1
6204995 Hokkyo et al. Mar 2001 B1
6206765 Sanders et al. Mar 2001 B1
6210819 Lal et al. Apr 2001 B1
6216709 Fung et al. Apr 2001 B1
6221119 Homola Apr 2001 B1
6248395 Homola et al. Jun 2001 B1
6261681 Suekane et al. Jul 2001 B1
6270885 Hokkyo et al. Aug 2001 B1
6274063 Li et al. Aug 2001 B1
6283838 Blake et al. Sep 2001 B1
6287429 Moroishi et al. Sep 2001 B1
6290573 Suzuki Sep 2001 B1
6299947 Suzuki et al. Oct 2001 B1
6303217 Malhotra et al. Oct 2001 B1
6309765 Suekane et al. Oct 2001 B1
6358636 Yang et al. Mar 2002 B1
6362452 Suzuki et al. Mar 2002 B1
6363599 Bajorek Apr 2002 B1
6365012 Sato et al. Apr 2002 B1
6381090 Suzuki et al. Apr 2002 B1
6381092 Suzuki Apr 2002 B1
6387483 Hokkyo et al. May 2002 B1
6388956 Mori et al. May 2002 B1
6391213 Homola May 2002 B1
6395349 Salamon May 2002 B1
6403919 Salamon Jun 2002 B1
6408677 Suzuki Jun 2002 B1
6426157 Hokkyo et al. Jul 2002 B1
6429984 Alex Aug 2002 B1
6468670 Ikeda et al. Oct 2002 B1
6482330 Bajorek Nov 2002 B1
6482505 Bertero et al. Nov 2002 B1
6495252 Richter et al. Dec 2002 B1
6500567 Bertero et al. Dec 2002 B1
6528124 Nguyen Mar 2003 B1
6537638 Do et al. Mar 2003 B2
6548821 Treves et al. Apr 2003 B1
6551728 Acharya et al. Apr 2003 B1
6552871 Suzuki et al. Apr 2003 B2
6565719 Lairson et al. May 2003 B1
6566674 Treves et al. May 2003 B1
6571806 Rosano et al. Jun 2003 B2
6572989 Bian et al. Jun 2003 B2
6607842 Bian et al. Aug 2003 B2
6628466 Alex Sep 2003 B2
6664503 Hsieh et al. Dec 2003 B1
6670055 Tomiyasu et al. Dec 2003 B2
6682807 Lairson et al. Jan 2004 B2
6683754 Suzuki et al. Jan 2004 B2
6707766 Mori et al. Mar 2004 B2
6730420 Bertero et al. May 2004 B1
6743528 Suekane et al. Jun 2004 B2
6754020 Hikosaka et al. Jun 2004 B1
6759138 Tomiyasu et al. Jul 2004 B2
6778353 Harper Aug 2004 B1
6795274 Hsieh et al. Sep 2004 B1
6834026 Fullerton et al. Dec 2004 B2
6846543 Bian et al. Jan 2005 B2
6855232 Jairson et al. Feb 2005 B2
6857937 Bajorek Feb 2005 B2
6872478 Bian et al. Mar 2005 B2
6881497 Coffey et al. Apr 2005 B2
6893748 Bertero et al. May 2005 B2
6899959 Bertero et al. May 2005 B2
6916558 Umezawa et al. Jul 2005 B2
6926977 Osawa et al. Aug 2005 B2
6939120 Harper Sep 2005 B1
6946191 Morikawa et al. Sep 2005 B2
6950260 Coffey et al. Sep 2005 B2
6967798 Homola et al. Nov 2005 B2
6972135 Homola Dec 2005 B2
7004827 Suzuki et al. Feb 2006 B1
7006323 Suzuki Feb 2006 B1
7016154 Nishihira Mar 2006 B2
7019924 McNeil et al. Mar 2006 B2
7045215 Shimokawa May 2006 B2
7060375 Lee et al. Jun 2006 B2
7070870 Bertero et al. Jul 2006 B2
7090934 Hokkyo et al. Aug 2006 B2
7099112 Harper Aug 2006 B1
7105241 Shimokawa et al. Sep 2006 B2
7119990 Bajorek et al. Oct 2006 B2
7147790 Wachenschwanz et al. Dec 2006 B2
7161753 Wachenschwanz et al. Jan 2007 B2
7163756 Yamamoto et al. Jan 2007 B2
7166319 Ishiyama Jan 2007 B2
7166374 Suekane et al. Jan 2007 B2
7169487 Kawai et al. Jan 2007 B2
7174775 Ishiyama Feb 2007 B2
7179549 Malhotra et al. Feb 2007 B2
7184139 Treves et al. Feb 2007 B2
7196860 Alex Mar 2007 B2
7199977 Suzuki et al. Apr 2007 B2
7208236 Morikawa et al. Apr 2007 B2
7220500 Tomiyasu et al. May 2007 B1
7229266 Harper Jun 2007 B2
7239970 Treves et al. Jul 2007 B2
7241517 Acharya et al. Jul 2007 B2
7252897 Shimokawa et al. Aug 2007 B2
7277254 Shimokawa et al. Oct 2007 B2
7281920 Homola et al. Oct 2007 B2
7292329 Treves et al. Nov 2007 B2
7300713 Bian et al. Nov 2007 B2
7301726 Suzuki Nov 2007 B1
7302148 Treves et al. Nov 2007 B2
7305119 Treves et al. Dec 2007 B2
7314404 Singh et al. Jan 2008 B2
7320584 Harper et al. Jan 2008 B1
7329114 Harper et al. Feb 2008 B2
7375362 Treves et al. May 2008 B2
7420886 Tomiyasu et al. Sep 2008 B2
7425719 Treves et al. Sep 2008 B2
7471484 Wachenschwanz et al. Dec 2008 B2
7498062 Calcaterra et al. Mar 2009 B2
7521137 Hohlfeld et al. Apr 2009 B2
7531485 Hara et al. May 2009 B2
7537846 Ishiyama et al. May 2009 B2
7549209 Wachenschwanz et al. Jun 2009 B2
7569490 Staud Aug 2009 B2
7582368 Berger et al. Sep 2009 B2
7588841 Berger et al. Sep 2009 B2
7597792 Homola et al. Oct 2009 B2
7597973 Ishiyama Oct 2009 B2
7608193 Wachenschwanz et al. Oct 2009 B2
7632087 Homola Dec 2009 B2
7656615 Wachenschwanz et al. Feb 2010 B2
7678476 Weller et al. Mar 2010 B2
7682546 Harper Mar 2010 B2
7684152 Suzuki et al. Mar 2010 B2
7686606 Harper et al. Mar 2010 B2
7686991 Harper Mar 2010 B2
7695833 Ishiyama Apr 2010 B2
7722968 Ishiyama May 2010 B2
7733605 Suzuki et al. Jun 2010 B2
7736768 Ishiyama Jun 2010 B2
7736769 Ajan Jun 2010 B2
7755861 Li et al. Jul 2010 B1
7758732 Calcaterra et al. Jul 2010 B1
7833639 Sonobe et al. Nov 2010 B2
7833641 Tomiyasu et al. Nov 2010 B2
7862914 Kubota et al. Jan 2011 B2
7869162 Lu et al. Jan 2011 B2
7910159 Jung Mar 2011 B2
7911736 Bajorek Mar 2011 B2
7924519 Lambert Apr 2011 B2
7944165 O'Dell May 2011 B1
7944643 Jiang et al. May 2011 B1
7955723 Umezawa et al. Jun 2011 B2
7983003 Sonobe et al. Jul 2011 B2
7993497 Moroishi et al. Aug 2011 B2
7993765 Kim et al. Aug 2011 B2
7998912 Chen et al. Aug 2011 B2
8002901 Chen et al. Aug 2011 B1
8003237 Sonobe et al. Aug 2011 B2
8012920 Shimokawa Sep 2011 B2
8038863 Homola Oct 2011 B2
8057926 Ayama et al. Nov 2011 B2
8062778 Suzuki et al. Nov 2011 B2
8064156 Suzuki et al. Nov 2011 B1
8076013 Sonobe et al. Dec 2011 B2
8092931 Ishiyama et al. Jan 2012 B2
8100685 Harper et al. Jan 2012 B1
8101054 Chen et al. Jan 2012 B2
8125723 Nichols et al. Feb 2012 B1
8125724 Nichols et al. Feb 2012 B1
8137517 Bourez Mar 2012 B1
8142916 Umezawa et al. Mar 2012 B2
8149539 Lu et al. Apr 2012 B2
8163093 Chen et al. Apr 2012 B1
8171949 Lund et al. May 2012 B1
8173282 Sun et al. May 2012 B1
8178480 Hamakubo et al. May 2012 B2
8179637 Takeshita May 2012 B2
8206789 Suzuki Jun 2012 B2
8218260 Iamratanakul et al. Jul 2012 B2
8247095 Champion et al. Aug 2012 B2
8257783 Suzuki et al. Sep 2012 B2
8279739 Kanbe et al. Oct 2012 B2
8298609 Liew et al. Oct 2012 B1
8298689 Sonobe et al. Oct 2012 B2
8309239 Umezawa et al. Nov 2012 B2
8316668 Chan et al. Nov 2012 B1
8331056 O'Dell Dec 2012 B2
8351309 Kanbe et al. Jan 2013 B2
8354618 Chen et al. Jan 2013 B1
8367228 Sonobe et al. Feb 2013 B2
8383209 Ayama Feb 2013 B2
8394243 Jung et al. Mar 2013 B1
8397751 Chan et al. Mar 2013 B1
8399809 Bourez Mar 2013 B1
8402638 Treves et al. Mar 2013 B1
8404056 Chen et al. Mar 2013 B1
8404369 Ruffini et al. Mar 2013 B2
8404370 Sato et al. Mar 2013 B2
8406918 Tan et al. Mar 2013 B2
8414966 Yasumori et al. Apr 2013 B2
8425975 Ishiyama Apr 2013 B2
8431257 Kim et al. Apr 2013 B2
8431258 Onoue et al. Apr 2013 B2
8453315 Kajiwara et al. Jun 2013 B2
8488276 Jung et al. Jul 2013 B1
8491800 Dorsey Jul 2013 B1
8492009 Homola et al. Jul 2013 B1
8492011 Itoh et al. Jul 2013 B2
8496466 Treves et al. Jul 2013 B1
8509039 Huang et al. Aug 2013 B1
8517364 Crumley et al. Aug 2013 B1
8517657 Chen et al. Aug 2013 B2
8524052 Tan et al. Sep 2013 B1
8530065 Chernyshov et al. Sep 2013 B1
8546000 Umezawa Oct 2013 B2
8551253 Na'im et al. Oct 2013 B2
8551627 Shimada et al. Oct 2013 B2
8556566 Suzuki et al. Oct 2013 B1
8559131 Masuda et al. Oct 2013 B2
8562748 Chen et al. Oct 2013 B1
8565050 Bertero et al. Oct 2013 B1
8570844 Yuan et al. Oct 2013 B1
8580410 Onoue Nov 2013 B2
8584687 Chen et al. Nov 2013 B1
8591709 Lim et al. Nov 2013 B1
8592061 Onoue et al. Nov 2013 B2
8596287 Chen et al. Dec 2013 B1
8597723 Jung et al. Dec 2013 B1
8603649 Onoue Dec 2013 B2
8603650 Sonobe et al. Dec 2013 B2
8605388 Yasumori et al. Dec 2013 B2
8605555 Chernyshov et al. Dec 2013 B1
8608147 Yap et al. Dec 2013 B1
8609263 Chernyshov et al. Dec 2013 B1
8619381 Moser et al. Dec 2013 B2
8623528 Umezawa et al. Jan 2014 B2
8623529 Suzuki Jan 2014 B2
8634155 Yasumori et al. Jan 2014 B2
8658003 Bourez Feb 2014 B1
8658292 Mallary et al. Feb 2014 B1
8665541 Saito Mar 2014 B2
8668953 Buechel-Rimmel Mar 2014 B1
8674327 Poon et al. Mar 2014 B1
8685214 Moh et al. Apr 2014 B1
8696404 Sun et al. Apr 2014 B2
8711499 Desai et al. Apr 2014 B1
8743666 Bertero et al. Jun 2014 B1
8758912 Srinivasan et al. Jun 2014 B2
8787124 Chernyshov et al. Jul 2014 B1
8787130 Yuan et al. Jul 2014 B1
8791391 Bourez Jul 2014 B2
8795765 Koike et al. Aug 2014 B2
8795790 Sonobe et al. Aug 2014 B2
8795857 Ayama et al. Aug 2014 B2
8800322 Chan et al. Aug 2014 B1
8811129 Yuan et al. Aug 2014 B1
8817410 Moser et al. Aug 2014 B1
8867322 Chernyshov et al. Oct 2014 B1
8956741 Li et al. Feb 2015 B1
20010051287 Kikitsu et al. Dec 2001 A1
20020060883 Suzuki May 2002 A1
20030022024 Wachenschwanz Jan 2003 A1
20030096077 Ju et al. May 2003 A1
20040022387 Weikle Feb 2004 A1
20040132301 Harper et al. Jul 2004 A1
20040202793 Harper et al. Oct 2004 A1
20040202865 Homola et al. Oct 2004 A1
20040209123 Bajorek et al. Oct 2004 A1
20040209470 Bajorek Oct 2004 A1
20050016836 Kuo et al. Jan 2005 A1
20050031909 Bian et al. Feb 2005 A1
20050036223 Wachenschwanz et al. Feb 2005 A1
20050069730 Doerner et al. Mar 2005 A1
20050089726 Abarra Apr 2005 A1
20050142390 Ajan et al. Jun 2005 A1
20050142990 Homola Jun 2005 A1
20050150862 Harper et al. Jul 2005 A1
20050151282 Harper et al. Jul 2005 A1
20050151283 Bajorek et al. Jul 2005 A1
20050151300 Harper et al. Jul 2005 A1
20050155554 Saito Jul 2005 A1
20050163962 Kawato et al. Jul 2005 A1
20050167867 Bajorek et al. Aug 2005 A1
20050202287 Lu et al. Sep 2005 A1
20050227123 Ajan Oct 2005 A1
20050263401 Olsen et al. Dec 2005 A1
20060002026 Stipe et al. Jan 2006 A1
20060147758 Jung et al. Jul 2006 A1
20060181697 Treves et al. Aug 2006 A1
20060207890 Staud Sep 2006 A1
20060222896 Inomata et al. Oct 2006 A1
20070026263 Kubota et al. Feb 2007 A1
20070070549 Suzuki et al. Mar 2007 A1
20070245909 Homola Oct 2007 A1
20080026255 Das et al. Jan 2008 A1
20080074776 Soeya Mar 2008 A1
20080075845 Sonobe et al. Mar 2008 A1
20080093760 Harper et al. Apr 2008 A1
20080226817 Lee Sep 2008 A1
20090040644 Lu et al. Feb 2009 A1
20090117408 Umezawa et al. May 2009 A1
20090136782 Lu May 2009 A1
20090136784 Suzuki et al. May 2009 A1
20090169922 Ishiyama Jul 2009 A1
20090191331 Umezawa et al. Jul 2009 A1
20090202866 Kim et al. Aug 2009 A1
20090311557 Onoue et al. Dec 2009 A1
20100021770 Hazanov et al. Jan 2010 A1
20100053811 Takeshita Mar 2010 A1
20100110577 Weller et al. May 2010 A1
20100143752 Ishibashi et al. Jun 2010 A1
20100159285 Peng et al. Jun 2010 A1
20100178529 Marinero Jul 2010 A1
20100182714 Kanbe et al. Jul 2010 A1
20100190035 Sonobe et al. Jul 2010 A1
20100196619 Ishiyama Aug 2010 A1
20100196740 Ayama et al. Aug 2010 A1
20100209601 Shimokawa et al. Aug 2010 A1
20100215992 Horikawa et al. Aug 2010 A1
20100232065 Suzuki et al. Sep 2010 A1
20100247965 Onoue Sep 2010 A1
20100261039 Itoh et al. Oct 2010 A1
20100279151 Sakamoto et al. Nov 2010 A1
20100300884 Homola et al. Dec 2010 A1
20100304186 Shimokawa Dec 2010 A1
20110011733 Yang et al. Jan 2011 A1
20110096432 Lu et al. Apr 2011 A1
20110097603 Onoue Apr 2011 A1
20110097604 Onoue Apr 2011 A1
20110171495 Tachibana et al. Jul 2011 A1
20110205862 Kanbe et al. Aug 2011 A1
20110206947 Tachibana et al. Aug 2011 A1
20110212346 Onoue et al. Sep 2011 A1
20110223446 Onoue et al. Sep 2011 A1
20110235479 Kanbe et al. Sep 2011 A1
20110244119 Umezawa et al. Oct 2011 A1
20110299194 Aniya et al. Dec 2011 A1
20110311841 Saito et al. Dec 2011 A1
20120069466 Okamoto et al. Mar 2012 A1
20120070692 Sato et al. Mar 2012 A1
20120077060 Ozawa Mar 2012 A1
20120113768 Kanbe et al. May 2012 A1
20120127599 Shimokawa et al. May 2012 A1
20120127601 Suzuki et al. May 2012 A1
20120129009 Sato et al. May 2012 A1
20120140359 Tachibana Jun 2012 A1
20120141833 Umezawa et al. Jun 2012 A1
20120141835 Sakamoto Jun 2012 A1
20120148875 Hamakubo et al. Jun 2012 A1
20120156523 Seki et al. Jun 2012 A1
20120164488 Shin et al. Jun 2012 A1
20120170152 Sonobe et al. Jul 2012 A1
20120171369 Koike et al. Jul 2012 A1
20120175243 Fukuura et al. Jul 2012 A1
20120189872 Umezawa et al. Jul 2012 A1
20120196049 Azuma et al. Aug 2012 A1
20120207919 Sakamoto et al. Aug 2012 A1
20120225217 Itoh et al. Sep 2012 A1
20120251842 Yuan et al. Oct 2012 A1
20120251846 Desai et al. Oct 2012 A1
20120276417 Shimokawa et al. Nov 2012 A1
20120300600 Kanbe et al. Nov 2012 A1
20120307398 Kanbe et al. Dec 2012 A1
20120308722 Suzuki et al. Dec 2012 A1
20130016591 Tomikawa et al. Jan 2013 A1
20130040167 Alagarsamy et al. Feb 2013 A1
20130071694 Srinivasan et al. Mar 2013 A1
20130165029 Sun et al. Jun 2013 A1
20130175252 Bourez Jul 2013 A1
20130194901 Kanbe et al. Aug 2013 A1
20130208578 Kanbe et al. Aug 2013 A1
20130216865 Yasumori et al. Aug 2013 A1
20130230647 Onoue et al. Sep 2013 A1
20130314815 Yuan et al. Nov 2013 A1
20140011054 Suzuki Jan 2014 A1
20140044992 Onoue Feb 2014 A1
20140050843 Yi et al. Feb 2014 A1
20140057134 Inaba Feb 2014 A1
20140064047 Niwa et al. Mar 2014 A1
20140093748 Chen et al. Apr 2014 A1
20140151360 Gregory et al. Jun 2014 A1
20140234666 Knigge et al. Aug 2014 A1
Foreign Referenced Citations (3)
Number Date Country
2003085702 Mar 2003 JP
2011060344 Mar 2011 JP
2008030199 Mar 2008 WO
Non-Patent Literature Citations (12)
Entry
Andrew Bullen, et al., “Thermal Conductivity of Amorphous Carbon Thin Films,” J. Appl. Phys. vol. 88, No. 11, Dec. 4, 2000, pp. 6316-6320.
Chen, et al.“Structure and Magnetic Properties of L10 FePt Film with Ag Heat Sink Layer,” J.Appl.Phys.105, 07B72 (2009), 4 pages.
Yang, et al., “Highly Ordered FePt L1o Thin Films With Small Grains on RuA1 Seed Layers”, IEEE Transactions on Magnetics, vol. 47, No. 1, pp. 81-86, Jan. 2011, 6 pages.
Yang, et al., “Epitaxial Growth of L1o-FePt Granular Thin Films on TiC/RuA1 Underlayers”, IEEE Transactions on Magnetics, vol. 47, No. 10, pp. 4077-4079, Oct. 2011, 3 pages.
Shen, et al., “In situ epitaxial growth of ordered FePt (001) films with ultra small and uniform grain size using a RuA1 underlayer”, Journal of Applied Physics 97, 10H301 (2005) , 3 pages.
Ferrenberg, Alan M. and D. P. Landau, Monte Carlo study of phase transitions in ferromagnetic bilayers, Center for Simulational Physics, The University of Georgia, Athens, Georgia 30602, J. Appl. Phys., vol. 70, No. 10, Nov. 15, 1991, pp. 2615-2617.
Sasaki, J. and F. Matsubara, Magnetic properties of mesoscopic ultrathin magnetic films with uniaxial anisotropy, J. Appl. Phys., vol. 87, No. 6, Mar. 15, 2000. pp. 3018-3022.
Thiele, J.-U., K. R. Coffey, M. F. Toney, J. A. Hedstrom, and A. J. Kellock, Temperature dependent magnetic properties of highly chemically ordered Fe55-xNixPt45L10 films, J. Appl. Phys., vol. 91, No. 10, May 15, 2002, pp. 6595-6600.
Cuccoli, Allesandro, Tommaso Roscilde, Valerio Tognetti, Ruggero Vais and Paola Verrucchi, Anisotropy and Ising-type transition of the S=5/2 two-dimensional Heisenberg antiferromagnet Mn-formate di-Urea, American Institute of Physics, J. Appl. Phys., vol. 93, No. 10, Parts 2 & 3, May 15, 2003, pp. 7637-7639.
Victora, R. H., Xi Chen and Tao Qu, Temporal Fluctuations of Magnetic Anisotropy and their Impact on HAMR Media Noise, The Center for Micromagnetics and Information Technologies, Aug. 18, 2010.
Hua Yuan, et al., U.S. Appl. No. 13/206,071, filed Aug. 9, 2011, 31 pages.
Gerardo A. Bertero, et al., U.S. Appl. No. 13/769,232, filed Feb. 15, 2013, 19 pages.
Provisional Applications (1)
Number Date Country
61894527 Oct 2013 US