MAGNETIC MEMORY DEVICE

Abstract

According to one embodiment, a magnetic memory device includes a magnetoresistance effect element portion, a switching element portion provided on a lower layer side of the magnetoresistance effect element portion, a buffer insulating portion provided between the magnetoresistance effect element portion and the switching element portion, and a conductive portion surrounding a side surface of the buffer insulating portion and electrically connecting the magnetoresistance effect element portion and the switching element portion to each other.

Description

Claims

1. A magnetic memory device comprising: a magnetoresistance effect element portion;a switching element portion provided on a lower layer side of the magnetoresistance effect element portion;a buffer insulating portion provided between the magnetoresistance effect element portion and the switching element portion; anda conductive portion surrounding a side surface of the buffer insulating portion and electrically connecting the magnetoresistance effect element portion and the switching element portion to each other.

2. The device of claim 1, wherein a pattern of an upper surface of the buffer insulating portion is located inside a pattern of a lower surface of the magnetoresistance effect element portion as viewed from a direction in which the magnetoresistance effect element portion, the buffer insulating portion, and the switching element portion are arranged.

3. The device of claim 1, wherein an outer circumference of an upper surface of the conductive portion is aligned with an outer circumference of a lower surface of the magnetoresistance effect element portion as viewed from a direction in which the magnetoresistance effect element portion, the buffer insulating portion and the switching element portion are arranged.

4. The device of claim 1, wherein an outer circumference of a lower surface of the conductive portion is aligned with an outer circumference of an upper surface of the switching element portion as viewed from a direction in which the magnetoresistance effect element portion, the buffer insulating portion and the switching element portion are arranged.

5. The device of claim 1, wherein the buffer insulating portion contains silicon (Si) and oxygen (O), or silicon (Si) and nitrogen (N).

6. The device of claim 1, wherein the switching element portion includes a bottom electrode, a top electrode and a switching material layer provided between the bottom electrode and the top electrode.

7. The device of claim 6, wherein the switching material layer is formed of an insulating material containing a metal element.

8. The device of claim 6, wherein the conductive portion is connected to the top electrode of the switching element portion.

9. The device of claim 1, wherein the switching element portion changes from an off state to an on state when voltage applied between terminals thereof becomes greater than or equal to a predetermined voltage.

10. The device of claim 1, wherein the magnetoresistance effect element portion includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer.

11. The device of claim 10, wherein the conductive portion is connected to a magnetic layer located on a lower layer side, of the first magnetic layer and the second magnetic layer.

12. The device of claim 1, further comprising: a sidewall insulating portion provided along a sidewall of the magnetoresistance effect element portion.

13. The device of claim 12, wherein the sidewall insulating portion is formed of a material different from a material of the buffer insulating portion.

14. The device of claim 1, further comprising: a first wiring line extending in a first direction; anda second wiring line extending in a second direction intersecting the first direction, whereina structure including the magnetoresistance effect element portion, the switching element portion and the buffer insulating portion is provided between the first wiring line and the second wiring line.