Magnetic random access memory with improved writing margin

Abstract

A magnetic memory with improved writing margin is provided, which includes a magnetic tunnel junction device and an adjustment layer. The magnetic tunnel junction device includes an anti-ferromagnetic layer, a pinned layer, a tunnel barrier layer, and a free layer formed sequentially. The adjustment layer is formed on one side of the magnetic tunnel junction device and contacts the free layer. The thickness of the adjustment layer is smaller than 20 nm and it employs Ru or Ru-base materials. The magnetic memory with improved writing margin may improve the switching uniformity and reduce the switching field of the free layer. Therefore, the current necessary for the write word line is reduced.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will become more fully understood from the detailed description given herein below for illustration only, and which thus is not limitative of the present invention, and wherein:

FIG. 1 shows the MTJ structure of magnetic access memory disclosed in the prior art;

FIGS. 2A and 2B show the MTJ structure of magnetic access memory disclosed by the invention;

FIG. 3 shows the magnetic resistance change (R-H loop) of the magnetic access memory with the structure disclosed in the prior art;

FIG. 4 shows the astroid curves of the magnetic access memory with the structure disclosed in the prior art;

FIG. 5 shows the magnetic resistance change (R-H loop) of the magnetic access memory with the structure disclosed by the invention;

FIG. 6 shows the astroid curves of the magnetic access memory with the structure disclosed by the invention; and

FIGS. 7 to 13 show the fabricating flow of the magnetic access memory with the structure disclosed by the invention.

Claims

1. A magnetic random access memory (MRAM) with improved writing margin, comprising: a magnetic tunnel junction device, including an anti-ferromagnetic layer, a pinned layer, a tunnel barrier layer, and a free layer; andan adjustment layer, formed on one side of the magnetic tunnel junction device and contacting the free layer.

2. The MRAM according to claim 1, wherein the material of the adjustment layer is Ru or a Ru-base material.

3. The MRAM according to claim 2, wherein the Ru-base material is selected from among Ru alloys, Ru oxides, Ru nitrides, and combinations thereof.

4. The MRAM according to claim 1, wherein the pinned layer comprises more than one ferromagnetic layer.

5. The MRAM according to claim 1, wherein the pinned layer comprises an artificial anti-ferromagnetic layer formed by sequentially stacking a ferromagnetic material, a non-magnetic metal, and a ferromagnetic material.

6. The MRAM according to claim 1, wherein the free layer comprises more than one magnetic layer.

7. The MRAM according to claim 1, wherein the free layer comprises an artificial anti-ferromagnetic layer formed by sequentially stacking a magnetic layer, a non-magnetic metal layer, and a magnetic layer.

8. The MRAM according to claim 1, further comprising a mask layer formed on the other side of the adjustment layer.

9. The MRAM according to claim 8, further comprising a first metal wire disposed on the other side of the anti-ferromagnetic layer, and a second metal wire disposed on the other side of the mask layer.

10. The MRAM according to claim 1, wherein the anti-ferromagnetic layer, the pinned layer, the tunnel barrier layer, and the free layer are sequentially formed.

11. The MRAM according to claim 1, wherein the free layer, the tunnel barrier layer, the pinned layer, and the anti-ferromagnetic layer are sequentially formed.

12. A MRAM with improved writing margin, comprising: a magnetic tunnel junction device, including an anti-ferromagnetic layer, a pinned layer, a tunnel barrier layer, and a free layer; andan adjustment layer, formed on one side of the magnetic tunnel junction device and contacting the free layer, wherein the thickness of the adjustment layer is smaller than 20 nm.

13. The MRAM according to claim 12, wherein the thickness of the adjustment layer falls in a range of 0.1˜10.0 nm.

14. The MRAM according to claim 12, wherein the material of the adjustment layer is Ru or a Ru-base material.

15. The MRAM according to claim 14, wherein the Ru-base material is selected from among Ru alloys, Ru oxides, Ru nitrides, and combinations thereof.

16. The MRAM according to claim 12, wherein the pinned layer comprises more than one ferromagnetic layer.

17. The MRAM according to claim 12, wherein the pinned layer comprises an artificial anti-ferromagnetic layer formed by sequentially stacking a ferromagnetic material, a non-magnetic metal, and a ferromagnetic material.

18. The MRAM according to claim 12, wherein the free layer comprises more than one magnetic layer.

19. The MRAM according to claim 12, wherein the free layer comprises an artificial anti-ferromagnetic layer formed by sequentially stacking a magnetic layer, a non-magnetic metal layer, and a magnetic layer.

20. The MRAM according to claim 12, wherein the anti-ferromagnetic layer, the pinned layer, the tunnel barrier layer, and the free layer are sequentially formed.

21. The MRAM according to claim 12, wherein the free layer, the tunnel barrier layer, the pinned layer, and the anti-ferromagnetic layer are sequentially formed.