The inventors have carried out various experimental researches in order to enhance the coercivity of a recording layer of a perpendicular magnetic recording medium. As a result, the inventors have made findings as given below: when a material amorphized by adding at least one kind of element of zirconium (Zr) and tantalum (Ta) to an iron-cobalt (Fe—Co) alloy having a body-centered cubic (bcc) structure is used as a magnetic material to form a soft magnetic under layer, a magnetic recording medium using this material can enhance the coercivity of the recording layer as compared to a conventional magnetic recording medium. The present invention has been made based on such experimental researches.
As the element to be added to the Fe—Co alloy, instead of Zr and Ta, at least one kind of the following elements may be used: niobium (Nb); silicon (Si); boron (B); titanium (Ti); tungsten (W); chromium (Cr) and carbon (C). Also with this structure, the magnetic recording medium can enhance the coercivity of the recording layer as compared to the conventional magnetic recording medium. Experiments by the inventors, however, have shown that the use of the Fe—Co alloy containing Zr or Ta added thereto achieves a higher degree of enhancement of the coercivity of the recording layer, as compared to the use of the Fe—Co alloy containing any of Nb, Si, B, Ti, W, Cr and C added thereto.
Preferably, the soft magnetic under layer has a structure as given below: the soft magnetic under layer is formed of the first and second soft magnetic layers made of the aforementioned amorphized material, and a nonmagnetic layer sandwiched between the soft magnetic layers, and the first soft magnetic layer is antiferromagnetically coupled to the second soft magnetic layer. Preferably, the thicknesses of the first and second soft magnetic layers each lie between 20 and 30 nm inclusive. Also, the Fe content in the amorphized material is preferably equal to or more than 30 at %.
Preferably, the interlayer formed over the soft magnetic under layer has a laminated structure, which is formed of a polycrystalline film having a face-centered cubic (fcc) structure, and a polycrystalline film formed over the polycrystalline film and having a hexagonal close-packed (hcp) structure. Preferably, the recording layer is formed of a first recording layer having a granular structure, and a second recording layer formed over the first recording layer and made of a Co based alloy. This structure is adapted as given below: the first recording layer is formed of magnetic particles made of a cobalt-chromium-platinum (Co—Cr—Pt) alloy and a nonmagnetic material made of titanium oxide, the Cr content in the Co—Cr—Pt alloy lies between 11 and 15 at % inclusive, the Pt content in the Co—Cr—Pt alloy lies between 11 and 21 at % inclusive, and the molar ratio between the Co—Cr—Pt alloy and the titanium oxide in the first recording layer lies between a ratio of 93 to 7 and a ratio of 91 to 9. This structure can increase an S/N (signal-to-noise) ratio and thus achieve the magnetic recording medium capable of still higher performance.
According to the present invention, the coercivity of the recording layer of the perpendicular magnetic recording medium can be enhanced, so that the recording layer can record information at still higher recording densities than hitherto. Moreover, the S/N ratio can be raised to thereby improve the reliability of writing and reading of the magnetic recording device.
The recording layer has the granular structure formed of the Co—Cr—Pt alloy and the titanium oxide, and the compositions thereof and the molar ratio therebetween are set within respective predetermined ranges. Using the recording layer of this structure enables a further reduction in noise originating from the magnetic recording medium and hence a further improvement in the reliability of the magnetic recording device.
Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.
(Magnetic Recording Medium)
Further, the main recording layer 16 has a granular structure, which is formed of magnetic particles 16b, the easy magnetization axis of which are oriented perpendicularly to the surface of the magnetic recording medium 10, and a nonmagnetic material 16a which provides magnetic isolation between the magnetic particles 16b. The auxiliary write layer 17 is composed of a magnetic material made of a cobalt (Co) base alloy while the magnetic material has a nongranular structure.
In the magnetic recording medium 10 according to the first embodiment, the soft magnetic layers 13a and 13c are each made of a soft magnetic material amorphized by adding zirconium (Zr) and tantalum (Ta) to an iron-cobalt (Fe—Co) alloy of such composition as forms a body-centered cubic (bcc) structure.
First, as shown in
In the first embodiment, the glass substrate is used as the base material 11. However, it should be noted that a material other than the glass substrate may be used for the base material 11. For example, a plastic substrate, a substrate made of a NiP-plated aluminum alloy, a silicon substrate or the like, besides the glass substrate previously mentioned, may be used as the base material 11 for a solid magnetic recording medium such as a hard disk. Likewise, a tape or sheet made of resin such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN) or polyimide may be used as the base material 11 to manufacture a magnetic recording medium in tape or sheet form.
Next, as shown in
Then, the magnetic domain control layer (or the nonmagnetic layer) 13b is formed over the lower soft magnetic layer 13a by depositing ruthenium (Ru) in a thickness of, for example, 0.4 to 3 nm by sputtering method. The magnetic domain control layer 13b may be made of rhodium (Rh), iridium (Ir), copper (Cu), or the like.
Then, the upper soft magnetic layer 13c is formed by forming a soft magnetic amorphous FeCoZrTa layer in a thickness of, for example, 30 nm over the magnetic domain control layer 13b. The deposition conditions for forming the upper soft magnetic layer 13c are the same as those for forming the lower soft magnetic layer 13a. The upper soft magnetic layer 13c can be likewise made of an amorphous material obtained by adding to an iron-cobalt (Fe—Co) alloy which is composed to form a body-centered cubic (bcc) structure, at least one of the following elements: zirconium (Zr); tantalum (Ta); niobium (Nb); silicon (Si); boron (B); titanium (Ti); tungsten (W); chromium (Cr) and carbon (C). Preferably, the thickness of the upper soft magnetic layer 13c lies between 20 and 30 nm inclusive.
The soft magnetic under layer 13 having a laminated structure formed of the lower soft magnetic layer 13a, the magnetic domain control layer 13b and the upper soft magnetic layer 13c is formed over the seed layer 12 in the manner as above described. In the soft magnetic under layer 13 of this laminated structure, antiferromagnetic coupling occurs between the lower and upper soft magnetic layers 13a and 13c with the magnetic domain control layer 13b in between, so that the respective magnetizations M1 of the soft magnetic layers 13a and 13c stabilize in an antiparallel state. Even at the occurrence of the so-called “abutments (or magnetic domain walls)” in which magnetizations opposite in direction are present adjacent to each other within the lower or upper soft magnetic layer 13a or 13c, magnetic flux leaking from the magnetic domain walls circulate in the soft magnetic under layer 13 because the magnetizations of the soft magnetic layers 13a and 13c are in an anti-parallel state. Consequently, this structure reduces the likelihood that the magnetic flux originating from the magnetic domain walls will leak upwards out of the soft magnetic under layer 13, thus suppressing spike noise resulting from the detection of the magnetic flux by a magnetic head.
The structures adapted to suppress the spike noise include a structure in which a single soft magnetic soft magnetic under layer is formed above an antiferromagnetic layer. In the case of this structure, the antiferromagnetic layer is made of iridium-manganese (IrMn), iron-manganese (FeMn), or the like. As shown for example in
Then, as shown in
In the first embodiment, the orientation control layer (or the NiFeCr layer) 14a is deposited over the upper soft magnetic layer 13c made of the Fe—Co alloy based amorphous material, so that the orientation control layer 14a has a crystal structure of an excellent face-centered cubic (fcc) structure. The orientation control layer 14a of this fcc structure may be made of platinum (Pt), palladium (Pd), NiFe, NiFeSi, aluminum (Al), copper (Cu) or indium (In), besides NiFeCr mentioned above.
When the orientation control layer 14a is made of a soft magnetic material such as NiFe, the orientation control layer 14a functions as part of the upper soft magnetic layer 13c, thus achieving an apparently short distance from the magnetic head to the soft magnetic under layer 13 and hence the effect of improving the sensitivity of the magnetic head.
Then, as shown in
The crystal structure of the ruthenium (Ru) that forms the nonmagnetic layer 14b is a hexagonal close-packed (hcp) structure. An excellent crystallinity of the nonmagnetic layer 14b, results from a good lattice match between the hcp structure and the fcc structure which is the crystal structure of the orientation control layer 14a. By the action of the orientation control layer 14a as mentioned above, the crystal orientations of the nonmagnetic layer 14b are aligned in the same direction, so that the nonmagnetic layer 14b is excellent in crystallinity.
It should be noted that the nonmagnetic layer 14b of the hcp structure may also be made of a ruthenium (Ru) alloy containing cobalt (Co), chromium (Cr), tungsten (W) or rhenium (Re).
Then, as shown in
Under this condition, sputtering is then started through the application of 400 to 1000 watts of radio frequency (RF) power between the targets and the base material 11. The frequency of the RF power for the sputtering is not particularly limited and can be set at, for example, 13.56 MHz. About 400 to 1000 watts of direct current (DC) power, instead of the RF power, may also be used for the sputtering.
When the deposition conditions for sputtering method are a relatively high pressure (e.g., about 3 to 7 Pa) and a relatively low temperature (e.g., about 10 to 80 degrees centigrade) as mentioned above, a sparse film results as compared to a film deposited at a low pressure and a high temperature. Thus, target materials Co—Cr—Pt alloy and SiO2 do not mix with each other on the nonmagnetic layer 14b, thereby yielding the main recording layer 16 having the granular structure in which the magnetic particles 16b made of CoCrPt (CO66Cr14Pt20) are dispersed in the nonmagnetic material 16a made of SiO2 (see
Preferably, the percentage of the content of the nonmagnetic material 16a in the main recording layer 16 lies between about 5 and 15 at % inclusive. In the first embodiment, the percentage of content of the nonmagnetic material 16a in the main recording layer 16 is set at 7 at %. The thickness of the main recording layer 16 is not particularly limited. In the first embodiment, the thickness of the main recording layer 16 is 12 nm. The growth rate of the main recording layer 16 under formation is set at, for example, 5 nm/sec.
The nonmagnetic layer 14b of the hcp structure underneath the main recording layer 16 functions to orient the magnetic particles 16b perpendicularly to the film surface. Thereby, the magnetic particles 16b take on the crystal structure of the hcp structure extending perpendicularly as in the case of the nonmagnetic layer 14b, and moreover, the direction of the height of a hexagonal prism of the hcp structure coincides with the easy magnetization axis, so that the main recording layer 16 exhibits perpendicular magnetic anisotropy.
In the main recording layer 16 of the granular structure as mentioned above, each of the magnetic particles 16b is isolated from one another with its axis of easy magnetization oriented perpendicularly, thus achieving a reduction in noise resulting from the main recording layer 16.
In addition, when the percentage of the Pt content in the magnetic particles 16b is equal to or more than 25 at %, a magnetic anisotropy constant Ku of the main recording layer 16 decreases. Preferably, the percentage of the Pt content in the magnetic particles 16b is, therefore, less than 25 at %. As mentioned above, a trace of O2 gas, e.g., about 0.2 to 2% of O2 gas in terms of the flow rate can be mixed into the sputtering gas to thereby promote the isolation between the magnetic particles 16b in the main recording layer 16 and hence improve the characteristics of electromagnetic conversion.
The surface of the nonmagnetic layer 14b to underlie the main recording layer 16 can be made more uneven to promote the isolation between the magnetic particles 16b, that is, enlargement of spaced intervals between the magnetic particles 16b. The Ru layer to form the nonmagnetic layer 14b can be grown at a low growth rate of the order of 0.5 nm/sec to thus make the surface more uneven.
Although the description has been given with reference to the first embodiment with regard to a case where the nonmagnetic material 16a is made of silicon oxide, other oxides may be used for the nonmagnetic material 16a. Such oxides include oxides of, for example, titanium (Ti), chromium (Cr) and zirconium (Zr). Further, any one of nitrides of silicon (Si), titanium (Ti), chromium (Cr) and zirconium (Zr) may be used for the nonmagnetic material 16a.
Particles made of a cobalt-iron (Co—Fe) alloy may be employed as the magnetic particles 16b. When the Co—Fe alloy is used, it is preferable that the main recording layer 16 be subjected to heat treatment so that the magnetic particles 16b take on the crystal structure of a honeycomb chained triangle (HCT) structure. Copper (Cu) or silver (Ag) may be added to this Co—Fe alloy.
Then, the auxiliary write layer 17 is formed by depositing an alloy having cobalt (Co) and chromium (Cr) as main ingredients (e.g., CO67Cr19Pt10B4) in a thickness of about 6 nm over the main recording layer 16 by sputtering method using an argon gas (Ar) as a sputtering gas. The deposition conditions for the auxiliary write layer 17 are not particularly limited. In the first embodiment, the deposition conditions are a deposition pressure of 0.3 to 0.8 Pa and a growth rate of 5 nm/sec.
Crystals of CoCrPtB (e.g., CO67Cr19Pt10B4) which forms the auxiliary write layer 17 take on the same hcp structure as those of the magnetic particles 16b in the main recording layer 16 underneath the auxiliary write layer 17. Thus, an excellent lattice match exists between the magnetic particles 16b and the auxiliary write layer 17, so that the auxiliary write layer 17 having excellent crystallinity is grown over the main recording layer 16.
Then, as shown in
The magnetic recording medium 10 according to the first embodiment is brought to completion in the manner as above described.
To write information to the magnetic recording medium 10, as shown in
After passing perpendicularly through the recording layer 15, the recording magnetic field H travels in the soft magnetic under layer 13 in the in-plane direction thereof, then again passes perpendicularly through the recording layer 15, and then returns to the return yoke 31a having a large cross section. At this point, the direction of magnetization of the recording layer 15 does not change because of a low magnetic flux density.
By changing the direction of the recording magnetic field H according to information to be recorded, while moving the magnetic recording medium 10 relatively to the magnetic head 31 in the direction indicated by the arrow A of
As previously mentioned, in the first embodiment, the soft magnetic layers 13a and 13c that form the soft magnetic under layer 13 are each made of the material amorphized by adding an element such as Zr or Ta to the Fe—Co alloy which is composed to form the bcc structure. Description will be given below with regard to the results of examinations as to the relation between the materials for the soft magnetic layers 13a and 13c and the coercivity of the recording layer.
Materials, which are assigned Nos. 1 to 12, respectively, as shown in
Magnetic recording media (or test specimens) including soft magnetic under layers made of the alloys of compositions, which are assigned Nos. 1 to 12, respectively, as shown in
As can be seen from
Next, XRD (X-ray diffraction) measurements were made on the soft magnetic under layers. The results of the measurements are given in
Next, examinations were made as to the read/write (R/W) characteristics of the magnetic recording media using the soft magnetic under layers. Although test specimens for use in the examinations are basically the same as the test specimens for use in the coercivity measurements, the materials for the soft magnetic under layers and the thicknesses of the recording layers used in the former vary somewhat from those used in the latter.
As can be seen from
In the second embodiment, a main recording layer 36 has a granular structure, which is formed of magnetic particles 36b made of a cobalt-chromium-platinum (Co—Cr—Pt) alloy, and a nonmagnetic material 36a made of titanium oxide (TiO2), which provides magnetic isolation between the magnetic particles 36b. The Cr content in the magnetic particles 36b lies between 11 and 15 at % inclusive, and the Pt content therein lies between 11 and 21 at % inclusive. The molar ratio between the magnetic particles 36b (or the Co—Cr—Pt alloy) and the nonmagnetic material 36a (or TiO2) lies between a ratio of 93 to 7 and a ratio of 91 to 9.
As can be seen from
Alternatively, a titanium oxide content of 6 mol % or less in the main recording layer leads to insufficient isolation between the crystal grains of the magnetic particles (or the Co—Cr—Pt alloy), thus resulting in deterioration in the coercivity. In the second embodiment, the titanium oxide (TiO2) content in the main recording layer is therefore set at 7 to 9 mol %.
In
From
Furthermore, a Cr content of less than 11 at % in the magnetic particles increases saturation magnetization (Ms) and the anisotropic magnetic field (Hk), thus increases normalized noise, and thus reduces the S/N ratio. A Cr content of more than 15 at % in the magnetic particles deteriorates the magnetic properties and thus reduces the S/N ratio. In the second embodiment, the Cr content in the magnetic particles is therefore set to lie between 11 and 15 at % inclusive.
As described above, in the second embodiment, titanium oxide is used as the nonmagnetic material 36a in the main recording layer (or a granular layer) 36, and the Cr content and the Pt content in the magnetic particles 36b and the molar ratio between the magnetic particles 36b and the nonmagnetic material 36a are set within respective predetermined ranges. Thereby, the second embodiment can increase the S/N ratio and thus achieve the magnetic recording medium capable of still higher performance, as compared to the first embodiment.
(Magnetic Recording Device)
A magnetic recording device 100 includes a housing, a disc-shaped magnetic recording medium (or a magnetic disk) 101, a spindle motor (not shown) which rotates the magnetic recording medium 101, a magnetic head 102 which performs the writing and reading of data, a suspension 103 which supports the magnetic head 102, and an actuator 104 which drives and controls the suspension 103 radially of the magnetic recording medium 101, all of which are accommodated in the housing. The magnetic recording medium 101 has the construction described with reference to the above first or second embodiment.
When the magnetic recording medium 101 is rotated at high speed by the spindle motor, the magnetic head 102 is levitated slightly clear of the magnetic recording medium 101 by airflow produced by the rotation of the magnetic recording medium 101. The magnetic head 102 is moved by the actuator 104 radially of the magnetic recording medium 101, and the magnetic head 102 performs the writing or reading of information to or from the magnetic recording medium 101.
Since the magnetic recording device configured as mentioned above uses the magnetic recording medium 101 having the construction described with reference to the first or second embodiment, the magnetic recording device can record information at high densities and also has a high degree of reliability of the writing and reading of information.
Number | Date | Country | Kind |
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2006-268882 | Sep 2006 | JP | national |
2006-291427 | Oct 2006 | JP | national |