Claims
- 1. A method for manufacturing a magnetic recording medium, comprising the steps of:
- heating a non-magnetic base substrate to a temperature between 50.degree. C. and 200.degree. C.;
- forming a non-magnetic metal buffer layer on a surface of the non-magnetic base substrate while heating, said non-magnetic buffer layer comprising Cr;
- forming a non-magnetic metal under layer on said metal buffer layer, said non-magnetic under layer comprising Cr;
- forming a thin-film magnetic layer comprised of a ferromagnetic alloy on said metal under layer;
- wherein d.sub.1 /d.sub.2 is not less than 1.2 where d.sub.1 is a half bandwidth of an X-ray diffraction peak on the (110) plane of the metal buffer layer, and d.sub.2 is a half bandwidth of an X-ray diffraction peak on the (110) plane of the metal under layer.
- 2. The method of claim 1, wherein the non-magnetic metal buffer layer is formed by sputtering Cr on said non-magnetic base substrate.
- 3. The method of claim 1, wherein each of the non-magnetic metal buffer layer, non-magnetic under layer, and thin-film magnetic layer are formed by sputtering.
- 4. The method of claim 1, further comprising the step of forming a protective layer on a surface of said thin-film magnetic layer.
- 5. The method of claim 1, further comprising the step of polishing a surface of the non-magnetic base substance prior to heating so as to have a mirror surface with an average center line roughness between 0.5 nm and 1.15 nm.
- 6. The method of claim 1, wherein d.sub.1 /d.sub.2 is not less than 1.5.
- 7. The method of claim 6, wherein the thickness of the metal buffer layer is within a range of 30 nm to 200 nm.
- 8. The method of claim 6, wherein the thickness of the metal buffer layer is within a range of 50 nm to 150 nm.
- 9. The method of claim 7, wherein the thickness of the metal buffer layer is within a range of 50 nm to 150 nm.
- 10. A method for manufacturing a magnetic recording medium, comprising the steps of:
- heating a non-magnetic base substrate to a temperature between 50 C. and 200 C.;
- forming a non-magnetic metal buffer layer formed on said non-magnetic base substrate, said non-magnetic buffer layer comprising Cr;
- forming a non-magnetic metal under layer formed on said metal buffer layer, said non-magnetic under layer comprising Cr;
- forming a thin-film magnetic layer comprised of a ferromagnetic alloy formed on said metal under layer; and
- wherein the thickness of the metal buffer layer is within a range of 30 nm to 200 nm and d.sub.1 /d.sub.2 is not less than 1.2, where d.sub.1 is a half bandwidth of an X-ray diffraction peak on the (110) plane of the metal buffer layer and d.sub.2 is a half bandwidth of an X-ray diffraction peak on the (110) plane of the metal under layer.
Priority Claims (1)
| Number |
Date |
Country |
Kind |
| 5-7472 |
Jan 1993 |
JPX |
|
Parent Case Info
This is a Division of application Ser. No. 08/181,422 filed Jan. 14, 1994, now U.S. Pat. No. 5,496,632.
US Referenced Citations (8)
Foreign Referenced Citations (1)
| Number |
Date |
Country |
| 4008134 |
Sep 1990 |
DEX |
Divisions (1)
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Number |
Date |
Country |
| Parent |
181422 |
Jan 1994 |
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