This application claims priority from Japanese Patent Application No. JP2005-153666, filed May 26, 2005, the entire disclosure of which is incorporated herein by reference.
The present invention relates to a magnetic recording medium in which high density magnetic recording is attained. In particular, it relates to a magnetic disk in a longitudinal magnetic recording system.
Requirements for a larger capacity to magnetic disk apparatus have been increasing more and more. Therefore, it is advantageous to develop a magnetic head having high sensitivity and a magnetic recording medium having high S/N ratio and thermal stability. To improve the S/N ratio of the medium, it is necessary to improve the reading output when recorded at a high density. In general, a magnetic recording medium comprises, a first underlayer formed on a substrate as a so-called seed layer, a second underlayer with a body-centered cubic structure comprising an alloy having chromium as a main ingredient, a magnetic film and a protective film mainly composed of carbon. As the magnetic film, mainly an alloy with a hexagonal close-packed structure comprising cobalt as a main ingredient is used. In order to improve the reading output, it is useful to make the c-axis of the hexagonal close-packed structure, which is the easy axis of magnetization, parallel to the film surface by making the crystallographic orientation of (11.0) plane or (10.0) plane of the magnetic film substantially parallel to the surface of the substrate. It is known that the crystallographic orientation of the magnetic film can be controlled by a seed layer.
As a technique to achieve compatibility between the thermal stability and noise reduction, Patent Document 1 (Japanese Patent Laid-Open No. 7-134820) discloses a magnetic recording medium in which an underlayer formed on a substrate. Over the underlayer, a plurality of laminated magnetic films comprising at least two magnetic layers in contact with each other and having different compositions are formed by way of a non-magnetic layer. Patent Document 2 (US 2002/98390A) discloses a longitudinal magnetic recording medium stacked on a substrate, wherein the magnetic recording layer comprises an AFC layer, a ferromagnetic layer, and a non-ferromagnetic spacer separating the AFC layer and the ferromagnetic layer, in which the AFC layer comprises a first magnetic layer, a second magnetic layer and an anti-ferromagnetic coupling layer between the first and the second magnetic layer. The anti-ferromagnetic coupling layer of the AFC layer also has a thickness and a composition that provide an anti-ferromagnetic exchange coupling between the first and the second magnetic layer. The non-ferromagnetic spacer formed between the AFC layer and the ferromagnetic layer has a thickness and a composition that provides no exchange coupling between the AFC layer and the ferromagnetic layer. As a technique of improving the output characteristics of the magnetic recording medium, Patent Document 3 (U.S. Pat. No. 3,576,372) discloses a magnetic recording medium in which a non-magnetic underlayer, a magnetic film, and a protective film are formed successively above the substrate, in which the non-magnetic underlayer film comprises Cr or Cr alloy, the magnetic film has a plurality of magnetic layers comprising a Co alloy containing Cr, and the Cr content in the magnetic layer is gradually lowered from the magnetic layer on the lower side to the magnetic layer on the upper side.
Improvements for the reading output and reduction of the medium noise are important to improve the medium S/N ratio. To reduce the medium noise or improve the output characteristics, there is a method of forming the magnetic layer into a multiple layer directly or indirectly by using the techniques as disclosed by the literatures described above. However, in order to attain an areal recording density of 160 Mb/mm2 or more, it is not sufficient to just combine the methods described above. For further improvement of the medium S/N ratio, when a plurality of magnetic layers are stacked, it is necessary to optimize the number of magnetic layers to be stacked, the composition of each of the magnetic layers and the stacking directly or stacking indirectly by way of a non-magnetic layer.
It is a feature of the present invention to provide a longitudinal magnetic recording medium having a high medium S/N ratio, no problem in overwrite characteristics, an excellent bit error rate and sufficient thermal stability.
The magnetic recording medium according to an aspect of the present invention comprises a substrate, an underlayer formed above the substrate, a magnetic film formed by stacking a first magnetic layer, a second magnetic layer, a third magnetic layer, a non-magnetic intermediate layer and a fourth magnetic layer above the underlayer film, and a protective film formed over the magnetic film, in which each of the magnetic layers of the magnetic film comprises a cobalt-based alloy containing chromium. The first magnetic layer has the least thickness among all the magnetic layers, the second, the third and the fourth magnetic layer each further contain platinum and boron. The Brt of the second magnetic layer is smaller than Brt of the third magnetic layer, while the Brt of the third magnetic layer is smaller than Brt of the fourth magnetic layer. The ratio of Brt of the fourth magnetic layer to Brt of the entire magnetic film is within a range from about 40% to 55%.
In one embodiment, the underlayer film comprises a first underlayer, a second underlayer, and a third underlayer. The first and the second underlayer each are an amorphous alloy layer. The third underlayer is a chromium-titanium-boron alloy layer. The first magnetic layer comprises a cobalt-chromium alloy or a cobalt-chromium-platinum alloy. The content of boron contained in the second magnetic layer is less than the content of boron contained in the third magnetic layer. The non-magnetic intermediate layer contains ruthenium.
In another embodiment, the underlayer film comprises a first underlayer, a second underlayer, and a third underlayer. The first and the second underlayer each are an amorphous alloy layer. The third underlayer is a chromium-titanium-boron alloy layer with the boron content of about 1 at. % or more and about 6 at. % or less. The first magnetic layer comprises a cobalt-chromium alloy or a cobalt-chromium-platinum alloy with the chromium content of about 34 at. % or less. The content of boron contained in the second magnetic layer is less than the content of boron contained in the third magnetic layer. The content of boron contained in the third magnetic layer is about 8 at. % or more. The non-magnetic intermediate layer contains ruthenium.
In yet another embodiment, the underlayer film comprises a first underlayer, a second underlayer, and a third underlayer. The first and the second underlayer each are an amorphous alloy layer. The third underlayer is a chromium-titanium-boron alloy layer with the boron content of about 1 at. % or more and about 6 at. % or less. The first magnetic layer comprises a cobalt-chromium alloy or a cobalt-chromium-platinum alloy with the chromium content of about 34 at. % or less. The content of boron contained in the second magnetic layer is less than the content of boron contained in the third magnetic layer, and the second magnetic layer further contains tantalum. The content of boron contained in the third magnetic layer is about 8 at. % or more. The non-magnetic intermediate layer contains ruthenium.
In some embodiments, the coercivity of the third and the fourth magnetic layer is about 160 kA/m or more. The third and the fourth magnetic layer are magnetically separated by the non-magnetic intermediate layer. All the magnetic layers in the magnetic film are magnetized in the same direction.
The magnetic recording medium according to another aspect of the invention comprises a substrate, an underlayer film formed above the substrate, a magnetic film formed by stacking a first magnetic layer, a second magnetic layer, a third magnetic layer, a non-magnetic intermediate layer and a fourth magnetic layer over the underlayer film, and a protective film formed over the magnetic film, in which each of the magnetic layers of the magnetic film is a cobalt-based alloy containing chromium; the second, the third and the fourth magnetic layer each further contain platinum and boron; the first magnetic layer is formed directly on the underlayer film; the second magnetic layer is formed directly on the first magnetic layer; the third magnetic layer is formed directly on the second magnetic layer; the fourth magnetic layer is formed over the third magnetic layer by way of the non-magnetic intermediate layer; and, the first magnetic layer has the least thickness and the fourth magnetic layer has the greatest thickness among all the magnetic layers.
In one embodiment, the underlayer film comprises a first underlayer, a second underlayer, and a third underlayer. The first and the second underlayer each are an amorphous alloy layer. The third underlayer is a chromium-titanium-boron alloy layer. The first magnetic layer comprises a cobalt-chromium alloy or a cobalt-chromium-platinum alloy. The content of boron contained in the second magnetic layer is less than the content of boron contained in the third magnetic layer. The non-magnetic intermediate layer contains ruthenium.
In another embodiment, the underlayer film has a first underlayer, a second underlayer, and a third underlayer. The first and the second underlayer each are an amorphous alloy layer. The third underlayer is a chromium-titanium-boron alloy layer with the boron content of about 1 at. % or more and about 6 at. % or less. The first magnetic layer comprises a cobalt-chromium alloy or a cobalt-chromium-platinum alloy with the chromium content of about 34 at. % or less. The content of boron contained in the second magnetic layer is less than the content of boron contained in the third magnetic layer. The content of boron contained in the third magnetic layer is about 8 at. % or more. The non-magnetic intermediate layer preferably contains ruthenium.
In yet another embodiment, the underlayer film has a first underlayer, a second underlayer, and a third underlayer. The first and the second underlayer each are an amorphous alloy layer. The third underlayer is a chromium-titanium-boron alloy layer with the boron content of about 1 at. % or more and about 6 at. % or less. The first magnetic layer comprises a cobalt-chromium alloy or a cobalt-chromium platinum alloy with the chromium content of about 34 at. % or less. The content of boron contained in the second magnetic layer is less than the content of boron contained in the third magnetic layer, the layer further containing tantalum. The content of boron contained in the third magnetic layer is about 8 at. % or more. The non-magnetic intermediate layer contains ruthenium.
In specific embodiments, the coercivity of the third and the fourth magnetic layer is about 160 kA/m or more. The third and the fourth magnetic layers are magnetically separated by the non-magnetic intermediate layer. All the magnetic layers in the magnetic film are magnetized in the same direction.
According to the invention, it is possible to provide a longitudinal magnetic recording medium having high medium S/N ratio, no problem for overwriting characteristics, excellent bit error rate and also sufficient thermal stability.
At first, an example of a magnetic disk drive mounting a magnetic recording medium (magnetic disk) according to an example to be described below with reference to
By forming an underlayer film between the substrate 10 and the first magnetic layer 14, it is possible to control the crystallographic orientation of the magnetic film and refine the crystal grain size. In this embodiment, a first underlayer comprising a Ti—Co—Ni alloy, a second underlayer comprising a W—Co alloy and a third underlayer with a body-centered cubic structure comprising a Cr—Ti—B alloy are disposed between the substrate and the first magnetic layer. The magnetic film is constituted by stacking four magnetic layers, in which a first magnetic layer 14, a second magnetic layer 15, and a third magnetic 16 are stacked directly by sputtering continuously, and a fourth magnetic layer 18 is formed over the third magnetic layer 16 by way of a non-magnetic intermediate layer 17 comprising Ru, etc. By setting the coercivity of the third magnetic layer 16 and the fourth magnetic layer 18 to about 160 kA/m or more, the magnetic layers are not anti-ferromagnetically coupled but are magnetically separated by the non-magnetic intermediate layer 17. It is known that the medium noises are in inverse proportion to the square root of the number of magnetic particles in the recording layer responsible for recording. Since the medium has two recording layers and substantially twice the number of the magnetic particles responsible for recording, by magnetically separating the third magnetic layer 16 and the forth magnetic layer 18, the medium noise decreases and S/N ratio improves.
As the first magnetic layer 14, a cobalt-based alloy such as a Co—Cr alloy or a Co—Cr—Pt alloy is used. When the thickness of the first magnetic layer 14 is less than the thickness of the magnetic layer of the second magnetic layer 15 and the subsequent layers formed thereabove, the crystal grain size of the magnetic layers is refined to decrease the medium noise. For the second, third, and fourth magnetic layers 15, 16, and 18, Co-based alloys containing Cr, Pt, and B such as Co—Cr—Pt—B alloy, Co—Cr—Pt—B—Ta alloy, and Co—Cr—Pt—B—Cu alloy are used. For the product of the residual magnetization Br and the thickness t of the magnetic layers Brt, the writability of the medium improves when Brt of the second magnetic layer 15 is smaller than Brt of the third magnetic layer 16, Brt of the third magnetic layer 16 is smaller than Brt of the fourth magnetic layer 18, and the ratio of Brt of the fourth magnetic layer 18 in the entire Brt of the medium is within a range from about 40% to 55%. The direction of magnetization in each of the magnetic layers is in a same direction after the writing by a magnetic head.
For the magnetic film of the constitution described above, it is preferred that the concentration of Cr contained in the first magnetic layer 14 is about 34 at. % or less in order to stabilize the crystallographic orientation of the magnetic layer.
For high medium S/N ratio, it is preferred that the concentration of B contained in the second magnetic layer is lower than the concentration of B contained in the third magnetic layer 16 because the crystallographic orientation of the magnetic layer improves.
The coercivity of the medium is ensured by adding Pt to the second magnetic layer 15 and the magnetic layers over the second magnetic layer 15. The crystal grain size of the magnetic layer is refined and the medium noise is reduced by adding B to the second magnetic layer 15 and the magnetic layers over the second magnetic layer 15.
By adding Ta to the second magnetic layer 15, the writability of the medium improves because the anisotropic magnetic field in the magnetic layer nearer to the substrate 10 is difficult for the head magnetic fields to reach.
The underlayer film, the magnetic film, and the protective film are formed on the substrate by sputtering targets. As the physical vapor deposition method, a method such as RF sputtering, DC pulse sputtering, etc. are also effective in addition to DC sputtering. In the case of using the DC sputtering, it is preferred to apply a bias voltage in the process at or after the second magnetic layer in view of the increase of the coercivity.
In a magnetic disk drive mounting the magnetic disk of the composition described above, an areal recording density of 160 Mb/mm2 or more can be obtained.
Manufacturing methods and compositions for each of examples are to be described specifically.
An aluminosilicate glass substrate 10 chemically reinforced at the surface was cleaned by alkali cleaning and dried. Then, a Ti-40 at. % Co-10 at. % Ni alloy layer with a 15 nm thickness as a first underlayer 11, and a W-30 at. % Co alloy layer with a 3 nm thickness as a second underlayer 12 were formed at a room temperature. Successively, after heating the substrate 10 to a temperature of about 360 to 400° C. by a lump heater, a Cr-10 at. % Ti-3 at. % B alloy with an 8 nm thickness was formed as a third underlayer 13. Further, after forming a Co-16 at. % Cr-9 at. % Pt alloy layer with a 1.2 nm thickness as a first magnetic layer 14, a second magnetic layer 15 comprising a Co-22 at. % Cr-14 at. % Pt-6 at. % B-2 at. % Ta alloy, a third magnetic layer 16 comprising a Co-12 at. % Cr-13 at. % Pt-12 at. % B alloy, a non-magnetic intermediate layer 17 comprising Ru with a 0.8 nm thickness, and a fourth magnetic layer 18 comprising a Co-12 at. % Cr-13 at. % Pt-10 at. % B alloy, a film 19 with a 3 nm thickness comprising carbon as a main ingredient was formed as a protective film. After forming the protective film, a lubricant comprising a perfluoro alkyl polyether as a main ingredient was coated to form a lubrication film 20 with a 1.8 nm thickness.
The multi-layered film was formed by using a sputtering apparatus with single disk process. In the sputtering apparatus, the base vacuum pressure was 1.0 to 1.2×10−5 Pa and the tact time was 9 sec. The first underlayer to the third magnetic layer were formed in an Ar gas atmosphere at 0.53 to 0.93 Pa. Heating was done in a mixed gas atmosphere in which 1% oxygen was added to Ar. The carbon protective film was formed in a mixed gas atmosphere in which 10% nitrogen was added to Ar. A bias voltage at −200V was applied to the substrate 10 during sputtering the third underlayer 13, the second magnetic layer 15, the third magnetic layer 16 and the fourth magnetic layer 18. The discharge time was 4.5 sec for the first underlayer 11, the second magnetic layer 15, the third magnetic layer 16, and the fourth magnetic layer 18; the discharge time was 2.5 sec for the second underlayer 12, the first magnetic layer 14 and the non-magnetic intermediate layer 17; and the discharge time was 4.0 sec for the third underlayer 16. Brt (Br: residual magnetization of the magnetic layer, t: thickness of the magnetic layer) and the remanent coercivity Hcr of the manufactured medium were measured by using a Fast Remanent Moment Magnetometer (FRMM). KV/kT (K: magnetocrystalline anisotropy, V: volume of magnetic crystal particle, k: Boltzman's constant, T: absolute temperature) was determined with a vibration sample magnetometer (VSM) by evaluating the time dependence of the remanent coercivity from 7.5 sec to 240 sec at a room temperature and fitting to the Sharrock's formula. According to the studies made by the inventors, when KV/kT determined by this method was about 70 or more, the output decay caused by thermal fluctuation was suppressed to result in no problem in view of the reliability.
The recording performance was evaluated with a spin stand by using a composite type head having an electromagnetic induction type magnetic head for writing and a spin-valve type magnetic head for reading together.
As Comparative Example 1, a medium without the second magnetic layer 15 in Example 1 was manufactured.
As Comparative Example 2, a medium without the third magnetic layer 16 in Example 1 was manufactured.
As Comparative Example 3, a medium without the non-magnetic intermediate layer 17 and the fourth magnetic layer 18 in Example 1 was manufactured.
As a Comparative Example 4, a medium in which a Ru intermediate layer with 0.6 nm thickness was formed instead of a second magnetic layer 15 in Example 1 was manufactured.
As Comparative Example 5, a medium without the first magnetic layer 14 of Example 1 was manufactured. In this comparative example, measuring error that occurred in the evaluation by FRMM and the magnetic characteristics could not be evaluated. In the case of forming a magnetic layer comprising Co alloy containing Pt and B directly on a Cr—Ti—B alloy underlayer, the Co alloy magnetic layer is not epitaxially grown on the underlayer and the magnetic layer does not have in-plane orientation. Since the in-plane orientation could not be obtained in the magnetic layer at or after the second magnetic layer 15 because the first magnetic layer 14 was not formed, the medium performance was extremely deteriorated to the extent that the magnetic characteristics could not be evaluated. Judging from the results mentioned above, the first magnetic layer 14 is essential for obtaining an in-plane orientation necessary for the longitudinal magnetic recording medium.
Judging from the results of Comparative Examples 1 to 5, at least four magnetic layers are necessary in order to improve the medium performance.
As Comparative Example 6, a medium without the non-magnetic intermediate layer 17 in Example 1 was manufactured.
In the same manner as in Example 1, after forming from the first underlayer 11 to the non-magnetic intermediate layer 17, each of the following alloy layers was formed as the fourth magnetic layer 18.
Co-8 at. % Cr-13 at. % Pt-12 at. % B,
Co-10 at. % Cr-13 at. % Pt-12 at. % B,
Co-12 at. % Cr-13 at. % Pt-10 at. % B,
Co-12 at. % Cr-13 at. % Pt-12 at. % B,
Co-12 at. % Cr-13 at. % Pt-14 at. % B,
Co-14 at. % Cr-13 at. % Pt-12 at. % B.
A protective film 19 and a lubrication film 20 were formed over them in the same manner as in Example 1.
In the same manner as in Example 1, after forming from the first underlayer 11 to the second magnetic layer 15, each of the following alloy layers was formed as the third magnetic layer 16.
Co-8 at. % Cr-13 at. % Pt-12 at. % B,
Co-10 at. % Cr-13 at. % Pt-12 at. % B,
Co-12 at. % Cr-13 at. % Pt-10 at. % B,
Co-12 at. % Cr-13 at. % Pt-12 at. % B,
Co-12 at. % Cr-13 at. % Pt-14 at. % B,
Co-14 at. % Cr-13 at. % Pt-12 at. % B.
A non-magnetic intermediate layer 17, a fourth magnetic layer 18, a protective film 19 and a lubrication film 20 were formed over them in the same manner as in Example 1.
After forming from the first underlayer 11 to the first magnetic layer 14 in the same manner as in Example 1, each of the following alloy layers was formed as a second magnetic layer 15.
Co-20 at. % Cr-14 at. % Pt-6 at. % B-2 at. % Ta,
Co-22 at. % Cr-14 at. % Pt-4 at. % B-2 at. % Ta,
Co-22 at. % Cr-14 at. % Pt-6 at. % B-2 at. % Ta,
Co-22 at. % Cr-14 at. % Pt-6 at. % B,
Co-24 at. % Cr-14 at. % Pt-6 at. % B.
A third magnetic layer 16, a non-magnetic intermediate layer 17, a fourth magnetic layer 18, a protective film 19, and a lubrication film 20 were formed over them in the same manner as in Example 1.
After forming a first underlayer 11 to non-magnetic intermediate layer 17 in the same manner as in Example 1, each of the following alloy layers was formed as the fourth magnetic layer 18.
Co-12 at. % Cr-13 at. % Pt-10 at. % B,
Co-12 at. % Cr-13 at. % Pt-12 at. % B,
Co-12 at. % Cr-14 at. % Pt-8 at. % B,
Co-14 at. % Cr-14 at. % Pt-8 at. % B,
Co-12 at. % Cr-12 at. % Pt-10 at. % B-2 at. % Cu,
Co-11 at. % Cr-12 at. % Pt-14 at. % B-4 at. % Cu,
A protection film 19 and a lubrication film 20 were formed over them in the same manner as in Example 1.
After forming from a first underlayer 11 to a third underlayer 13 in the same manner in Example 1, each of the following alloy layers with 0.6 to 2.0 nm thickness was formed as the first magnetic layer 14.
Co-16 at. % Cr-9 at. % Pt,
Co-14 at. % Cr,
Co-16 at. % Cr,
Co-20 at. % Cr,
Co-27 at. % Cr,
Co-14 at. % Cr-2 at. % B,
Co-14 at. % Cr-4 at. % B,
Co-24 at. % Cr-4 at. % B,
Co-28 at. % Cr-4 at. % B.
A second magnetic layer 14, a third magnetic layer 15, a non-magnetic intermediate layer 17, a fourth magnetic layer 18, a protective film 19 and a lubrication film 20 were formed over them in the same manner as in Example 1.
After forming from a first underlayer 11 to a third underlayer 13 in the same manner as in Example 1, each of the following alloy layers with 0.8 to 4.0 nm thickness was formed as a first magnetic layer.
Co-16 at. % Cr-9 at. % Pt,
Co-16 at. % Cr-12 at. % Pt,
Co-19 at. % Cr-8 at. % Pt,
Co-27 at. % Cr,
Co-34 at. % Cr,
Co-46 at. % Cr,
Co-14 at. % Cr-4 at. % Ta,
Co-18 at. % Cr-4 at. % Ta,
Co-30 at. % Cr-4 at. % Ta,
Co-25 at. % Cr-2 at. % Ta.
A Co-22 at. % Cr-14 at. % Pt-4 at. % B-2 at. % Ta alloy layer was formed as a second magnetic layer 15 over them, and a third magnetic layer 16, a non-magnetic intermediate layer 17, a fourth magnetic layer 18, a protective film 19 and a lubrication film 20 were formed in the same manner as in Example 1.
After forming from a first underlayer 11 to a third underlayer 13 in the same manner as in Example 1, a Co-16 at. % Cr-9 at. % Pt alloy layer with 1.5 nm thickness as a first magnetic layer 14, and a Co-22 at. % Cr-14 at. % Pt-4 at. % B-2 at. % Ta alloy layer as a second magnetic layer 15, and each of the following alloy layers was formed as a third magnetic layer 16.
Co-10 at. % Cr-13 at. % Pt-14 at. % B,
Co-12 at. % Cr-13 at. % Pt-12 at. % B,
Co-14 at. % Cr-13 at. % Pt-10 at. % B,
Co-16 at. % Cr-12 at. % Pt-8 at. % B,
Co-10 at. % Cr-14 at. % Pt-10 at. % B-2 at. % Ta,
Co-14 at. % Cr-14 at. % Pt-8 at. % B-2 at. % Ta,
Co-12 at. % Cr-12 at. % Pt-10 at. % B-2 at. % Cu,
Co-11 at. % Cr-12 at. % Pt-14 at. % B-4 at. % Cu.
A non-magnetic intermediate layer 17, a fourth magnetic layer 18, a protective film 19 and a lubrication film 20 were formed over them in the same manner as in Example 1.
After forming a first underlayer 11, and a second underlayer 12 and heating the substrate, in the same manner as in Example 1, each of the following alloy layers with 8.0 nm was formed as the third underlayer 13.
Cr-10 at. % Ti,
Cr-10 at. % Ti-lat. % B,
Cr-10 at. % Ti-2 at. % B,
Cr-10 at. % Ti-3 at. % B,
Cr-10 at. % Ti-4 at. % B,
Cr-10 at. % Ti-5 at. % B,
Cr-10 at. % Ti-6 at. % B,
Cr-10 at. % Ti-7 at. % B.
A Co-16 at. % Cr-9 at. % Pt alloy layer with a 1.5 nm thickness as a first magnetic layer 14 and a Co-22 at. % Cr-14 at. % Pt-4 at. % B-2 at. % Ta alloy layer with a 7.7 nm thickness as a second magnetic layer 15 were formed over them. Then, a third magnetic layer 16 with a 6.1 nm thickness, a non-magnetic intermediate layer 17, a fourth magnetic layer 18 with a 8.1 nm thickness, a protective film 19, and a lubrication film 20 were formed over them in the same manner as in Example 1.
As described above, according to the examples of the invention, it is possible to provide a longitudinal magnetic recording medium having high medium S/N ratio, with no problem for overwriting performance, excellent bit error rate and also sufficient thermal stability. Further, in combination with a high sensitive magnetic head, it is possible to provide a magnetic storage apparatus with high reliability and an areal recording density of 160 Mb/mm2.
It is to be understood that the above description is intended to be illustrative and not restrictive. Many embodiments will be apparent to those of skill in the art upon reviewing the above description. The scope of the invention should, therefore, be determined not with reference to the above description, but instead should be determined with reference to the appended claims along with their full scope of equivalents.
Number | Date | Country | Kind |
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2005-153666 | May 2005 | JP | national |