Claims
- 1. A magnetic recording medium comprising a non-magnetic substrate, an undercoat layer, a ferromagnetic metal layer, a protective layer and a lubricating layer formed in this order on the substrate, wherein the protective layer is a plasma-polymerized hydrogen-containing carbon film having, as formed, a refractive index of 1.90 or more, a film thickness of 30 to 150 .ANG. and a contact angle with ion exchanged water of less than 80 degrees, the undercoat layer is a film formed of silicon oxide represented by SiOx (x=1.8-1.95), and the lubricating layer is formed of a compound selected from the group consisting of polar perfluoropolyethers, non-polar perfluoropolyethers, perfluorocarboxylic acids, phosphazens, perfluoroalkylates and perfluoroacrylate compounds.
- 2. A magnetic recording medium comprising a non-magnetic substrate, an undercoat layer, a ferromagnetic metal layer, an intercepting layer, a protective layer and a lubricating layer formed in this order on the substrate, wherein the protective layer is a plasma-polymerized hydrogen-containing carbon film (DLC film) having, as formed, a refractive index of 1.90 or more and a contact angle with ion exchanged water of less than 80 degrees, the undercoat layer and the intercepting layer are films formed of silicon oxide represented by SiOx (x=1.8-1.95), the total film thickness of the protective layer and the intercepting layer is 30 to 150 .ANG., and the lubricating layer is formed of a compound selected from the group consisting of polar perfluoropolyethers, non-polar perfluoropolyethers, perfluorocarboxylic acids, phosphazens, perfluoroalkylates and perfluoroacrylate compounds.
- 3. The magnetic recording medium according to claim 1 or 2, wherein the ferromagnetic metal layer is formed by vapor deposition.
- 4. A method for producing a magnetic recording medium according to claim 1 which comprises forming an undercoat layer of silicon oxide represented by SiOx (x=1.8-1.95) on a non-magnetic substrate, forming a ferromagnetic metal layer thereon in a vapor phase, then plasma polymerizing a hydrocarbon gas and hydrogen at a frequency of 50 kHz to 450 kHz while applying a negative bias to a base side to form a protective layer of a hydrogen-containing carbon film having, as formed, a refractive index of 1.90 or more, a contact angle with ion exchanged water of less than 80 degrees and a film thickness of 30 to 150 .ANG., and finally forming a lubricating layer of a compound selected from the group consisting of polar perfluoropolyethers, non-polar perfluoropolyethers, perfluorocarboxylic acids, phosphazens, perfluoroalkylates and perfluoroacrylate compounds.
- 5. A method for producing a magnetic recording medium according to claim 2 which comprises forming an undercoat layer of silicon oxide represented by SiOx (x=1.8-1.95) on a non-magnetic substrate, forming a ferromagnetic metal layer thereon in a vapor phase, forming an intercepting layer of a film formed of silicon oxide represented by SiOx (x=1.8-1.95) by plasma polymerization, then plasma polymerizing a hydrocarbon gas and hydrogen at a frequency of 50 kHz to 450 kHz while applying a negative bias to a base side to form a protective layer of a hydrogen-containing carbon film having, as formed, a refractive index of 1.90 or more and a contact angle with ion exchanged water of less than 80 degrees, adjusting the total film thickness of the protective layer and the intercepting layer to 30 to 150 .ANG., and finally forming a lubricating layer of a compound selected from the group consisting of polar perfluoro-polyethers, non-polar perfluoropolyethers, perfluorocarboxylic acids, phosphazens, perfluoroalkylates and perfluoroacrylate compounds.
- 6. The method according to claim 4 or 5, wherein the negative bias is a pulse bias, the pulse duty factor (ON/OFF ratio) is 0.3 to 3, and the frequency is 10 Hz to 500 Hz.
- 7. The method according to claim 4 or 5, wherein the formation of the ferromagnetic metal layer in the vapor phase is by vapor deposition.
Priority Claims (2)
Number |
Date |
Country |
Kind |
5-299682 |
Nov 1993 |
JPX |
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5-299683 |
Nov 1993 |
JPX |
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CROSS REFERENCE TO RELATED APPLICATION
This application is a continuation-in-part of application Ser. No. 08/350,070, filed on Nov. 29, 1994 now abandoned.
US Referenced Citations (12)
Foreign Referenced Citations (6)
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Date |
Country |
57-135443 |
Aug 1982 |
JPX |
57-164432 |
Oct 1982 |
JPX |
3-53691 |
Aug 1991 |
JPX |
4-341918 |
Nov 1992 |
JPX |
5-20663 |
Jan 1993 |
JPX |
5-33456 |
May 1993 |
JPX |
Non-Patent Literature Citations (3)
Entry |
McGraw-Hill Encyclopedia of Science & Technology, 7th. edition, McGraw-Hill, Inc., New York, 1992. |
Van Nostrand's Scientific Encyclopedia, 8th. edition, Van Nostrand Reinhold, New York, 1995. |
Dictionary of Physics, edited by John Daintith, Barnes & Noble Books, 1981. |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
350070 |
Nov 1994 |
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