Claims
- 1. A magnetic recording medium comprising:
- a substrate;
- a magnetic film layer provided on said substrate; and
- a carbon film layer provided on said magnetic film layer, said carbon film layer containing hydrogen;
- wherein said carbon film layer showing a Raman spectrum having two peaks at wave number of approximately 1550 cm.sup.-1 and 1350 cm.sup.-1 provided by Raman spectroscopic analysis, said Raman spectrum being expressed by combination of first and second Gaussian curves having respective peaks at wave numbers of approximately 1550 cm.sup.-1 and 1350 cm.sup.-1, and an integrated intensity of said second Gaussian curve being not greater than 3 times an integrated intensity of said first Gaussian curve.
- 2. The magnetic recording medium of claim 1, wherein said carbon film layer has a film thickness of 20 to 25 nm.
- 3. The magnetic recording medium of claim 1, wherein said magnetic film layer is comprised of Co-series magnetic material.
- 4. The magnetic recording medium of claim 1, wherein said substrate includes an aluminum base body and an Ni-P film layer formed thereon.
- 5. A method of manufacturing a magnetic recording medium, comprising:
- a first step of forming a magnetic film layer on a substrate; and
- a second step of forming a carbon film layer on said magnetic film layer by monitoring a Raman spectrum of said carbon film layer,
- wherein said carbon film layer formed in said second step shows a Raman spectrum having two peaks at wave numbers of approximately 1550 cm.sup.-1 and 1350 cm.sup.-1 provided by Raman spectroscopic analysis, said Raman spectrum being expressed by combination of first and second Gaussian curves having respective peaks at wave numbers of approximately 1550 cm.sup.-1 and 1350 cm.sup.-1, and an integrated intensity of said second Gaussian curve being not greater than 3 times an integrated intensity of said first Gaussian curve.
- 6. The method of claim 5, wherein said carbon film layer is formed in an atmosphere containing hydrogen.
- 7. The method of claim 5, wherein said carbon film layer is formed by a sputtering method.
- 8. The method of claim 7, wherein a sputtering gas mixture containing inert gas and hydrogen gas is used in said sputtering method.
- 9. The method of claim 8, wherein the integrated intensity of said second Gaussian curve being not greater than 3 times an integrated intensity of said first Gaussian curve is provided by controlling a ratio of said inert gas to said hydrogen gas in said sputtering gas mixture.
- 10. The method of claim 7, wherein the integrated intensity of said second Gaussian curve being not greater than 3 times an integrated intensity of said first Gaussian curve is provided by controlling a voltage applied between electrodes used for forming said carbon film layer by said sputtering method.
- 11. A method of manufacturing a magnetic recording medium, comprising:
- a first step of forming a magnetic film layer on a substrate; and
- a second step of forming a hydrogen-containing carbon film layer on said magnetic film layer by controlling conditions for forming said hydrogen-containing carbon film layer so as to obtain a desirable Raman spectrum,
- wherein said carbon film layer formed by said second step shows a Raman spectrum having two peaks at wave numbers of approximately 1550 cm.sup.-1 and 1350 cm.sup.-1 provided by Raman spectroscopic analysis, said Raman spectrum being expressed by combination of first and second Gaussian curves having respective peaks at wave numbers of approximately 1550 cm.sup.-1 and 1350 cm.sup.-1, and an integrated intensity of said second Gaussian curve being not greater than 3 times an integrated intensity of said first Gaussian curve.
- 12. The method of claim 11, wherein said hydrogen-containing carbon film layer is formed in an atmosphere containing hydrogen.
- 13. The method of claim 11, wherein said hydrogen-containing carbon film layer is formed by a sputtering method.
- 14. The method of claim 13, wherein a sputtering gas mixture containing inert gas and hydrogen gas is used in said sputtering method.
- 15. The method of claim 14, wherein the integrated intensity of said second Gaussian curve being not greater than 3 times an integrated intensity of said first Gaussian curve is provided by controlling a ratio of said inert gas to said hydrogen gas In said sputtering gas mixture.
- 16. The method of claim 13 wherein the integrated intensity of said second Gaussian curve being not greater than 3 times an integrated intensity of said first Gaussian curve is provided by controlling a voltage applied between electrodes used for forming said hydrogen-containing carbon film layer by said sputtering method.
Priority Claims (1)
Number |
Date |
Country |
Kind |
4-261148 |
Sep 1992 |
JPX |
|
Parent Case Info
This is a continuation of application Ser. No. 08/124,859 filed Sep. 22, 1993, now U.S. Pat. No. 5,562,982.
US Referenced Citations (8)
Foreign Referenced Citations (1)
Number |
Date |
Country |
1-258218 |
Oct 1989 |
JPX |
Continuations (1)
|
Number |
Date |
Country |
Parent |
124859 |
Sep 1993 |
|