Magnetic substance with maximum complex permeability...

Abstract

A magnetic substance having the maximum value of complex permeability in quasi-microwave range is provided for suppressing a high frequency noise in a small-sized (electronic apparatus. The magnetic substance is of a magnetic composition comprising M, X and Y, where M is a metallic magnetic material consisting of Fe, Co, and/or Ni, X being element or elements other than M and Y, and Y being F, N, and/or O. The M-X-Y magnetic composition has a concentration of M in the composition so that said M-X-Y magnetic composition has a saturation magnetization of 35-80% of that of the metallic bulk of magnetic material comprising M alone. The magnetic composition has the maximum μ″max of complex.

Description

TECHNICAL FIELD OF THE INVENTION

[0001] This invention relates to a magnetic substance for use in suppression or absorption of a high frequency noise in electric and electronic apparatus and, in particular, to such a magnetic substance adapted for use in suppression of electromagnetic interference (EMI) caused in an active electronic element, a high frequency circuit component, and a high frequency electronic apparatus.

TECHNICAL BACKGROUND

[0002] It is well known in the art that a cylindrical ferrite core is attached onto an electric power code to an electronic apparatus, for example, computer so as to suppressing a high frequency noise from flowing into, or from, the computer through the electric power code. The ferrite core absorbs the high frequency noise current flowing through the power code. The ferrite core used has a large volume in comparison with electronic apparatus which have rapidly been small-sized with electronic circuit components disposed at a high density.

[0003] It is also well known in the art that a concentrated constant circuit such as a decoupling capacitor is assembled in a power circuit line in the electronic apparatus so as to suppressing undesired radiation from the power line.

[0004] It is also another problem that a high frequency noise is often caused or induced from a semiconductor or an integrated circuit device of a high speed operation type such as a random access memory (RAM), a read only memory (ROM), a microprocessor (MPU), a central processing unit (CPU), or an image processor arithmetic logic unit (IPALU) because an electric signal flows in a high speed circuit therein with rapid change in current and voltage value.

[0005] In addition, electronic elements and cables are disposed with a high density in a small-sized electronic apparatus. Therefore, those elements and lines are very close to each other and thereby affected to each other to cause the EMI.

[0006] In order to suppress the high frequency noise from those semiconductor devices and the EMI within the small-sized electronic apparatus, the conventional ferrite core cannot be used because it has a relatively large volume.

[0007] On the other hand, use of the concentrated constant circuit cannot sufficiently suppress the high frequency noise caused in the circuit using electronic elements of the high speed operation type because the noise has an increased frequency so that the circuit line actually acts as a distributed constant circuit.

[0008] JP-A 10-97913 discloses a complex magnetic substance having a relatively large core loss or complex permeability. The complex magnetic substance is disposed adjacent a semiconductor device and/or electronic circuit device and can suppress a high frequency noise radiated therefrom.

[0009] It is understood from the recent research that use of the magnetic substance having the complex permeability μ″ is considered as an effective resistance added to the circuit generating the noise so that the noise can be attenuated. The effective resistance is dependent on the complex permeability μ″ of the magnetic substance used. In detail, providing that the magnetic substance has a constant area, it is certain that the effective resistance is dependent on the complex permeability μ″ and the thickness of the magnetic substance. This means that magnetic substance having an increased complex permeability could provide a high frequency noise suppressor with a reduced volume, that is, a reduced size in area and thickness, which could be assembled within a small-sized apparatus.

SUMMARY OF THE INVENTION

[0010] Therefore, this invention aims to provide a magnetic substance having an increased complex permeability at a high frequency, preferably the maximum value of the complex permeability within a quasi-microwave range of 0.1-10 gigahertz.

[0011] According to this invention, a magnetic substance according to claim 1 can be obtained.

[0012] Further, according the invention, the magnetic substance according to dependent claims 2-15, a noise suppressor according to dependent claim 16 and a noise suppressing method according to dependent claim 17 are obtained.

[0013] As one of magnetic substance having a low core loss and a high saturation magnetization, a M-X-Y magnetic composition (M: magnetic metallic element, Y: O, N, or F, X. element or elements other than M and Y) is known in the prior art, which is mainly produced by the sputtering method or the vapor deposition method and has a granular structure where metallic magnetic particles of M are dispersed in a non-magnetic matrix (X and Y)like ceramics.

[0014] During searching fine structures of the M-X-Y magnetic composition having the excellent permeability, the present co-inventors found out that the high saturation magnetization can be realized in a high concentration region of M where the M-X-Y magnetic composition has a saturation magnetization of 80% or more of that of the metallic bulk of magnetic material comprising M alone.

[0015] The M-X-Y magnetic composition has a low specific resistance. Therefore, when it is formed in a part having a relatively thickness which is used in a high frequency range, the part permits an eddy current to flow therein. As a result, the part is reduced in permeability. Therefore, the conventional M-X-Y magnetic composition having the high saturation magnetization cannot be used for part having an increased thickness.

[0016] The present inventors further found out that the M-X-Y magnetic composition having a reduced concentration of M has an increased complex permeability μ″ in a high frequency range. In a reduced concentration region of M where the M-X-Y magnetic composition has a saturation magnetization of 6-80% of that of the metallic bulk of magnetic material comprising M alone, the M-X-Y magnetic composition has a relatively high specific resistance about 100 μΩ·cm or more. Therefore, if a part having a relatively thickness such as several micrometers (μm)is formed of the composition with the reduced concentration of M, it shows a reduced loss due to the eddy current. The core loss or complex permeability is a loss due to the natural resonance. Therefore, the distribution of the complex permeability on a frequency axis is narrow. This means that the M-X-Y magnetic composition with the reduced concentration of M is useful for suppression of noise within a narrow frequency range.

[0017] In a further reduced concentration of M where the M-X-Y magnetic composition has a saturation magnetization of 35-60% of that of the metallic bulk of magnetic material comprising M alone, the M-X-Y magnetic composition has a higher specific resistance about 500 μΩ·cm or more. Therefore, the loss due to the eddy current is further reduced in a part made of the composition and having a relatively thickness such as several micrometers (μm). Magnetic mutual effect between M particles becomes small so that the spin heat fluctuation becomes large to cause fluctuation of that frequency at which the natural resonance of the complex permeability generates. Therefore, the complex permeability μ″ has a relatively large value over a broad frequency range. This means that the M-X-Y magnetic composition with the further reduced concentration of M is useful for suppression of noise within a broad frequency range.

[0018] In a more reduced concentration of M, particles of M do not magnetically effect to each other so that the M-X-Y composition exhibits the superparamagnetism.

[0019] In design of a part made of magnetic substance to be disposed adjacent an electronic circuit so as to suppress a high frequency noise, a value of a product (μ″·δ) of the complex permeability μ″ and a thickness δ of the magnetic substance is considered. Generally,(μ″·δ)≧1000 μm is required for effectively suppressing high frequency noise of hundreds megahertz (MHz). When the magnetic composition used has the complex permeability of about 1000 (μ″=1000), the noise suppressor is required to have a thickness of 1 micrometer (μm) or more. Therefore, the composition having a low specific resistance is not desired because the eddy current is easily generated but is desired to have an increased specific resistance such as 100 μ·Ω or more.

[0020] In the view point of the above, M-X-Y composition used for the noise suppressor is desired to have a reduced concentration of M where the M-X-Y magnetic composition has a saturation magnetization of 35-80% of that of the metallic bulk of magnetic material comprising M alone.

BRIEF DESCRIPTION OF THE DRAWING

[0021] FIG. 1 is a schematic view showing a granular structure of M-X-Y magnetic composition;

[0022] FIG. 2A is a schematic sectional view showing a structure of a sputtering apparatus which was used in examples;

[0023] FIG. 2B is a schematic sectional view showing a structure of a vapor deposition apparatus which was used in examples;

[0024] FIG. 3 is a graphical view showing a frequency response of a complex permeability of film sample 1 in Example 1;

[0025] FIG. 4 is a graphical view showing a frequency response of a complex permeability of film sample 2 in Example 2;

[0026] FIG. 5 is a graphical view showing a frequency response of a complex permeability of comparable sample 1 in Comparable Example 1;

[0027] FIG. 6 is a schematic and perspective view of a test apparatus for testing an noise suppressing effect of magnetic samples;

[0028] FIG. 7A is a graphic view showing a transmission characteristic of film sample 1;

[0029] FIG. 7B is a graphic view showing a transmission characteristic of comparable sample of composite magnetic material sheet;

[0030] FIG. 8A is a distribution constant circuit with a length l showing a magnetic material as a noise suppressor;

[0031] FIG. 8B is an equivalent circuit with a unit length Δl of the distribution constant circuit of FIG. 8A;

[0032] FIG. 8C is an equivalent circuit with a length l of the distribution constant circuit of FIG. 8A;

[0033] FIG. 9A is a graphic view showing a frequency response of an equivalent resistance R of film sample 1 in Example 1; and

[0034] FIG. 9B is a graphic view showing a frequency response of an equivalent resistance R of comparative sample of a composite magnetic material sheet.

EMBODIMENTS OF THE INVENTION

[0035] At first, description will be made as to granular structure and production methods of M-X-Y magnetic composition.

[0036] Referring to FIG. 1 in which schematically shows the granular structure of M-X-Y magnetic composition, particles 11 of metallic magnetic material M are uniformly or evenly distributed in a matrix 12 consisting of X and Y.

[0037] Referring to FIG. 2A, a sputtering apparatus shown therein was used for producing samples in the following examples and comparative examples. The sputtering apparatus has a conventional structure and comprises a vacuum container 20, a shutter 21, an atmospheric gas source 22, a substrate or a glass plate 23, chips 24 (X or X-Y), a target 25 (M), an RF power source, and a vacuum pump 27. The atmospheric gas source 22 and the vacuum pump 27 are connected to the vacuum container 20. The substrate 23 confronts to the target 25 on which chips 24 are disposed. The shutter 21 is disposed in front of the substrate 21. The RF power source 26 is connected to the target 25.

[0038] Referring to FIG. 2B, a vapor deposition apparatus shown therein was also used another apparatus for producing samples in the following examples and comparative examples. The vapor deposition apparatus has a conventional structure and has vacuum container 20, atmospheric gas source 22, and vacuum pump 27 similar to the sputtering apparatus but has a crucible 28 including materials (X-Y) in place of chips 24, target 25 and RF power source 26.

EXAMPLE 1

[0039] A thin film of M-X-Y magnetic composition was made on a glass plate by use of the sputtering apparatus shown in FIG. 2A at a sputtering condition shown in Table 1.

TABLE 1
Vacuum degree before sputtering <1 × 10−6 Torr
Atmosphere                      Ar gas
Electric Power                  RF
Targets                         Fe (diameter of 100 mm) and
                                Al2O3 chip (120 pieces)
                                (chip size: 5 mm × 5 mm × 2 mm)

[0040] The film sample 1 produced was analyzed by a fluorescent X-ray spectroscopy and confirmed as a film of a composition Fe72Al11O17. The film sample 1 had 2.0 micrometer (μm) in thickness, 530 micro ohm centimeters (μΩ·cm) in DC specific resistance, 18 Oe in anisotropy field (Hk), and 16,800 Gauss in saturation magnetization (Ms).

[0041] A percent ratio of the saturation magnetization of the film sample 1 and that of the metallic material M itself {Ms(M-X-Y)/Ms(M)}×100 was 72.2%.

[0042] In order to measure a permeability frequency response, the film sample 1 was formed in a ribbon like form and inserted in a coil. Under application of a bias magnetic field, an impedance variation of the coil was measured in response to frequency change of AC current applied to the coil. The measurement was several times for different values of the bias magnetic field. From the measured impedance variation in response to frequency variation, the complex permeability frequency response (μ″-f response) was calculated and is shown in FIG. 3. It will be noted from FIG. 3 that the complex permeability has a high peak or the maximum value (μ″max ) and rapidly falls either side of the peak. The natural resonance frequency (f(μ″max)) showing the maximum value (μ″max) is about 700 MHz. From the μ″-f response, a relative bandwidth bwr was determined as a percentage ratio of bandwidth between two frequency points which shows the complex permeability as a half value μ″50 of the maximum μ″max, to center frequency of said bandwidth. The relative bandwidth bwr was 148%.

EXAMPLE 2

[0043] In a condition similar to that in Example 1 but using of 150 Al2O3 chips, a film sample 2 was formed on a glass plate.

[0044] The film sample 2 produced was analyzed by a fluorescent X-ray spectroscopy and confirmed as a film of a composition Fe44Al22O34. The film sample 2 had 1.2 micrometer (μm) in thickness, 2400 micro ohm centimeters (μΩ·cm) in DC specific resistance, 120 Oe in anisotropy field (Hk), and 9600 Gauss in saturation magnetization (Ms). It will be noted that film sample 2 is higher than film sample 1 in the specific resistance.

[0045] A percent ratio of the saturation magnetization of the film sample 2 and that of the metallic material M itself {Ms(M-X-Y)/Ms(M)}×100 was 44.5%.

[0046] The μ″-f response of film sample 2 was also obtained in the similar manner as in Example 1 and shows in FIG. 4. It is noted that the peak has also a high value similar to that in film sample 1. However, the frequency point at the peak, or the natural resonance frequency is about 1 GHz and the complex permeability gradually falls either side of the peak so that the μ″-f response has a broadband characteristic.

[0047] A relative bandwidth bwr of film sample 2 was also confirmed as 181% by the similar way as in Example 1.

COMPARATIVE EXAMPLE 1

[0048] In a condition similar to that in Example 1 but using of 90 Al2O3 chips, a comparative sample 1 was formed on a glass plate.

[0049] The comparative sample 1 produced was analyzed by a fluorescent X-ray spectroscopy and confirmed as a film of a composition Fe86Al6O8. The comparative sample 1 had 1.2 micrometer (μm) in thickness, 74 micro ohm centimeters (μΩ·cm) in DC specific resistance, 22 Oe in anisotropy field (Hk), 18,800 Gauss in saturation magnetization (Ms), and 85.7% in a percent ratio of the saturation magnetization of the comparative sample 1 and that of the metallic material M itself {Ms(M-X-Y)/Ms(M)}×100, and. was 44.5%.

[0050] The μ″-f response of comparative sample 1 was also obtained in the similar manner as in Example 1, and is shown in FIG. 5. It will be noted from FIG. 5 that the complex permeability μ″ of the comparative sample 1 has a high peak at a frequency about 10 MHz but rapidly reduces at the higher frequency range than 10 MHz. It can be supposed that this reduction is caused by generation of eddy current due to the lower specific resistance.

COMPARATIVE EXAMPLE 2

[0051] In a condition similar to that in Example 1 but using of 200 Al2O3 chips, a comparative sample 2 was formed on a glass plate.

[0052] The comparative sample 2 produced was analyzed by a fluorescent X-ray spectroscopy and confirmed as a film of a composition Fe19Al34O47. The comparative sample 2 had 1.3 micrometer (μm) in thickness, 10,500 micro ohm centimeters (μΩ·cm) in DC specific resistance.

[0053] The magnetic characteristic of comparative sample 1 exhibited superparamagnetism.

EXAMPLE 4

[0054] A thin film of M-X-Y magnetic composition was made on a glass plate by the reactive sputtering method using the sputtering apparatus shown in FIG. 2A at a sputtering condition shown in Table 2. The partial pressure ratio of N2 was 20%. The thin film was heat-treated at a temperature of 300° C. for two hours in vacuum under magnetic field and obtained a film sample 4.

TABLE 2
Vacuum degree before sputtering <1 × 10−6 Torr
Atmosphere                      Ar + N2 gas
Electric Power                  RF
Targets                         Fe (diameter of 100 mm) and
                                Al chip (150 pieces)
                                (chip size: 5 mm × 5 mm × 2 mm)

[0055] The properties of film sample 4 are show in Table 3.

TABLE 3
Film thickness          1.5 μm
{Ms(M-X-Y)/Ms(M)} × 100 51.9%
μ″max                   520
f (μ″max)               830 MHz
bwr                     175%

EXAMPLE 5

[0056] A thin film of M-X-Y magnetic composition was made on a glass plate by using the sputtering apparatus shown in FIG. 2A at a sputtering condition shown in Table 4. The thin film was heat-treated at a temperature of 300° C. for two hours in vacuum under magnetic field and obtained a film sample 5.

TABLE 4
Vacuum degree before sputtering <1 × 10−6 Torr
Atmosphere                      Ar gas
Electric Power                  RF
Targets                         Co (diameter of 100 mm) and
                                Al2O3 chip (130 pieces)
                                (chip size: 5 mm × 5 mm × 2 mm)

[0057] The properties of film sample 5 are show in Table 5.

TABLE 5
Film thickness          1.1 μm
{Ms(M-X-Y)/Ms(M)} × 100 64.7%
μ″max                   850
f (μ″max)               800 MHz
bwr                     157%

EXAMPLE 6

[0058] A thin film of M-X-Y magnetic composition was made on a glass plate by the reactive sputtering method using the sputtering apparatus shown in FIG. 2A at a sputtering condition shown in Table 6. The partial pressure ratio of N2 was 10%. The thin film was heat-treated at a temperature of 300° C. for two hours in vacuum under magnetic field and obtained a film sample 6.

TABLE 6
Vacuum degree before sputtering <1 × 10−6 Torr
Atmosphere                      Ar + N2 gas
Electric Power                  RF
Targets                         Co (diameter of 100 mm) and
                                Al chip (170 pieces)
                                (chip size: 5 mm × 5 mm × 2 mm)

[0059] The properties of film sample 6 are show in Table 7.

TABLE 7
Film thickness          1.2 μm
{Ms(M-X-Y)/Ms(M)} × 100 32.7%
μ″max                   350
f (μ″max)               1 GHz
bwr                     191%

EXAMPLE 7

[0060] A thin film of M-X-Y magnetic composition was made on a glass plate by using the sputtering apparatus shown in FIG. 2A at a sputtering condition shown in Table 8. The thin film was heat-treated at a temperature of 300° C. for two hours in vacuum under magnetic field and obtained a film sample 7.

TABLE 8
Vacuum degree before sputtering <1 × 10−6 Torr
Atmosphere                      Ar gas
Electric Power                  RF
Targets                         Ni (diameter of 100 mm) and
                                Al2O3 chip (140 pieces)
                                (chip size: 5 mm × 5 mm × 2 mm)

[0061] The properties of film sample 4 are show in Table 9.

TABLE 9
Film thickness          1.7 μm
{Ms(M-X-Y)/Ms(M)} × 100 58.2%
μ″max                   280
f (μ″max)               240 MHz
bwr                     169%

EXAMPLE 8

[0062] A thin film of M-X-Y magnetic composition was made on a glass plate by the reactive sputtering method using the sputtering apparatus shown in FIG. 2A at a sputtering condition shown in Table 10. The partial pressure ratio of N2 was 10%. The thin film was heat-treated at a temperature of 300° C. for two hours in vacuum under magnetic field and obtained a film sample 8.

TABLE 10
Vacuum degree before sputtering <1 × 10−6 Torr
Atmosphere                      Ar + N2 gas
Electric Power                  RF
Targets                         Ni (diameter of 100 mm) and
                                Al chip (100 pieces)
                                (chip size: 5 mm × 5 mm × 2 mm)

[0063] The properties of film sample 10 are show in Table 11.

TABLE 11
Film thickness          1.3 μm
{Ms(M-X-Y)/Ms(M)} × 100 76.2%
μ″max                   410
f (μ″max)               170 MHz
bwr                     158%

EXAMPLE 9

[0064] A thin film of M-X-Y magnetic composition was made on a glass plate by using the sputtering apparatus shown in FIG. 2A at a sputtering condition shown in Table 12. The thin film was heat-treated at a temperature of 300° C. for two hours in vacuum under magnetic field and obtained a film sample 9.

TABLE 12
Vacuum degree before sputtering <1 × 10−6 Torr
Atmosphere                      Ar gas
Electric Power                  RF
Targets                         Fe (diameter of 100 mm) and
                                TiO2 chip (150 pieces)
                                (chip size: 5 mm × 5 mm × 2 mm)

[0065] The properties of film sample 9. are show in Table 13.

TABLE 13
Film thickness          1.4 μm
{Ms(M-X-Y)/Ms(M)} × 100 43.6%
μ″max                   920
f (μ″max)               1.5 GHz
bwr                     188%

EXAMPLE 10

[0066] A thin film of M-X-Y magnetic composition was made on a glass plate by the reactive sputtering method using the sputtering apparatus shown in FIG. 2A at a sputtering condition shown in Table 14. The partial pressure ratio Of O2 was 15%. The thin film was heat-treated at a temperature of 300° C. for two hours in vacuum under magnetic field and obtained a film sample 10.

TABLE 14
Vacuum degree before sputtering <1 × 10−6 Torr
Atmosphere                      Ar + O2 gas
Electric Power                  RF
Targets                         Fe (diameter of 100 mm) and
                                Si chip (130 pieces)
                                (chip size: 5 mm × 5 mm × 2 mm)

[0067] The properties of film sample 10 are show in Table 15.

TABLE 15
Film thickness          1.5 μm
{Ms(M-X-Y)/Ms(M)} × 100 55.2%
μ″max                   920
f (μ″max)               1.2 GHz
bwr                     182%

EXAMPLE 11

[0068] A thin film of M-X-Y magnetic composition was made on a glass plate by using the sputtering apparatus shown in FIG. 2A at a sputtering condition shown in Table 16. The thin film was heat-treated at a temperature of 300° C. for two hours in vacuum under magnetic field and obtained a film sample 11.

TABLE 16
Vacuum degree before sputtering <1 × 10−6 Torr
Atmosphere                      Ar gas
Electric Power                  RF
Targets                         Fe (diameter of 100 mm) and
                                HfO3 chip (100 pieces)
                                (chip size: 5 mm × 5 mm × 2 mm)

[0069] The properties of film sample 11 are show in Table 17.

TABLE 17
Film thickness          1.8 μm
{Ms(M-X-Y)/Ms(M)} × 100 77.4%
μ″max                   1800
f (μ″max)               450 MHz
bwr                     171%

EXAMPLE 12

[0070] A thin film of M-X-Y magnetic composition was made on a glass plate by using the sputtering apparatus shown in FIG. 2A at a sputtering condition shown in Table 18. The thin film was heat-treated at a temperature of 300° C. for two hours in vacuum under magnetic field and obtained a film sample 12.

TABLE 18
Vacuum degree before sputtering <1 × 10−6 Torr
Atmosphere                      Ar gas
Electric Power                  RF
Targets                         Fe (diameter of 100 mm) and
                                BN chip (130 pieces)
                                (chip size: 5 mm × 5 mm × 2 mm)

[0071] The properties of film sample 12 are show in Table 19.

TABLE 19
Film thickness          1.9 μm
{Ms(M-X-Y)/Ms(M)} × 100 59.3%
μ″max                   950
f (μ″max)               680 MHz
bwr                     185%

EXAMPLE 13

[0072] A thin film of M-X-Y magnetic composition was made on a glass plate by using the sputtering apparatus shown in FIG. 2A at a sputtering condition shown in Table 20. The thin film was heat-treated at a temperature of 300° C. for two hours in vacuum under magnetic field and obtained a film sample 13.

TABLE 20
Vacuum degree before sputtering <1 × 10−6 Torr
Atmosphere                      Ar gas
Electric Power                  RF
Targets                         Fe50Co50 (diameter of 100 mm)
                                and Al2O3 chip (130 pieces)
                                (chip size: 5 mm × 5 mm × 2 mm)

[0073] The properties of film sample 13 are show in Table 21.

TABLE 21
Film thickness          1.6 μm
{Ms(M-X-Y)/Ms(M)} × 100 59.3%
μ″max                   720
f (μ″max)               1.1 GHz
bwr                     180%

EXAMPLE 14

[0074] A thin film of M-X-Y magnetic composition was made on a glass plate by using the vapor deposition apparatus shown in FIG. 2B at a condition shown in Table 22. The thin film was heat-treated at a temperature of 300° C. for two hours in vacuum under magnetic field and obtained a film sample 14.

TABLE 22
Vacuum degree before sputtering <1 × 10−6 Torr
Atmosphere flowing rate         O2 at 3.0 sccm
Elements in crucible 28 and 29  Fe and Al

[0075] The properties of film sample 14 are show in Table 23.

TABLE 23
Film thickness          1.1 μm
{Ms(M-X-Y)/Ms(M)} × 100 41.8%
μ″max                   590
f (μ″max)               520 MHz
bwr                     190%

[0076] Now, description will be made as to tests relating to noise suppressing effect of sample films and comparative samples, using a test apparatus shown in FIG. 6.

[0077] A test piece was film sample 1 with dimensions of 20 mm×20 mm×2.0 μm. For a comparison, a sheet of known composite magnetic material having dimensions of 20 mm×20 mm×1.0 mm. The composite magnetic material comprising polymer and flat magnetic metal powder dispersed in the polymer. The magnetic metal powder comprises Fe, Al and Si. The composite magnetic material has a complex permeability distribution in quasi-microwave range and has the maximum value of the complex permeability at a frequency about 700 MHz. Table 24 shows magnetic properties of both of the test piece and comparative test piece.

	TABLE 24
	Film sample 1	Comparative test piece
	μ″ 1700 MHz	about 1800	about 3.0
	bwr	148	196

[0078] As seen from Table 24, the film sample 1 is about 600 times more than comparative test piece in the maximum value of complex permeability. Since the noise suppressing effect is generally evaluated from a value of a product (μ″max×δ) of the maximum complex permeability μ″max and thickness of the piece δ, the thickness of the comparative test piece of the composite magnetic material sheet was selected 1 mm so that the both of test pieces have the similar values of (μ″max×δ).

[0079] Referring to FIG. 6, the test apparatus comprises a micro-strip line 61 having two ports, coaxial cables 62 connected to the two ports, and a network analyzer (not shown) connected across the two ports. The micro-strip line 61 has a line length of 75 mm and a characteristic impedance of 50 ohms. The test piece 63 was disposed at a region 64 on the micro-strip line 61 and the transmission characteristic S21 was measured. The frequency response of S21 are shown in FIGS. 7A and 7b for film sample 1 and the comparative sample, respectively.

[0080] With respect to use of film sample 1, it will be noted from FIG. 7A that S21 reduces above 100 MHz, becomes to the minimum of −10 dB at a frequency of 2 GHz and then increases above 2 GHz. On the other hand, with respect to use of comparative sample, it will be noted from FIG. 7B that S21 gradually reduces and becomes to the minimum of −10 dB at a frequency of 3 GHz.

[0081] The results demonstrate that S21 is dependent on the frequency distribution of the complex permeability and that the noise suppressing effect is dependent on the product of (μ″max×δ).

[0082] Now, providing that the magnetic sample forms a distribution constant circuit having a length of l as shown in FIG. 8A, an equivalent circuit was calculated for a unit length of Δl from transmission characteristics S11 and S21, as shown in FIG. 8B. Then, the equivalent circuit for the length l was obtained from the equivalent circuit for the unit length Δl, as shown in FIG. 8C. The equivalent circuit of the magnetic sample comprises series inductance L and resistance R and parallel capacitance C and conductance G, as shown in FIG. 8C. From this, it will be understood that the change of transmission characteristic of the micro-strip line caused due to disposition of the magnetic substance on the micro-strip line is mainly determined by the equivalent resistance R added in series.

[0083] In view of the above, a frequency response of the equivalent resistance R was measured. The measured data were shown in FIGS. 9A and 9B for the film sample 1 and the comparative sample, respectively. It will be noted from these figures that the equivalent resistance R gradually reduces in the quasi-microwave range and is about 60 ohms at about 3 GHz. It is seen that the frequency dependency of the equivalent resistance R is different from that of the complex permeability which has the maximum value at about 1 GHz. It will be supposed that this difference will be based on the gradual increase of a ratio of the product and the sample length to the wavelength.

[0084] Production method of the magnetic substance of this invention has been described as to the sputtering method and the vapor deposition method but they do not restrict the production method. Any other film producing method such as ion beam deposition method and gas deposition method can be used for production of the magnetic substance of the present invention if they can evenly produce the magnetic substance of the present invention. Further, the heat treatment after film production is not necessary if the film as produced has a sufficient property.

INDUSTRIAL APPLICABILITY

[0085] According to the present invention, the magnetic substance having a higher complex permeability in a high frequency such as a quasi-microwave range. Therefore, the magnetic substance according to the present invention can provide a noise suppressor which is useful in the small-sized electronic circuit elements and electronic apparatus.

Claims

1. A magnetic substance of a magnetic composition comprising M, X and Y, where M is a metallic magnetic material consisting of Fe, Co, and/or Ni, X being element or elements other than M and Y, and Y being F, N, and/or O which is characterized in that said M-X-Y magnetic composition has a concentration of M in the composition so that said M-X-Y magnetic composition has a saturation magnetization of 35-80% of that of the metallic bulk of magnetic material comprising M alone, said magnetic composition having the maximum μ″max of complex permeability μ″ in a frequency range of 0.1-10 gigahertz (GHz).

2. The magnetic substance according to claim 1, which has a complex permeability frequency response of a relatively narrow band where a relative bandwidth bwr is 200% or less, said relative bandwidth bwr is determined as a percentage ratio of bandwidth between two frequency points which shows the complex permeability as a half value μ″50 of the maximum μ″max, to center frequency of said bandwidth.

3. The magnetic substance according to claim 2, said metallic magnetic material X having a saturation magnetization, wherein said magnetic composition has a saturation magnetization which is 60-80% of the saturation magnetization of the metallic magnetic material X.

4. The magnetic substance according to claim 2 or 3, wherein said magnetic composition has a DC specific resistance of 100-700 μΩ·cm.

5. The magnetic substance according to claim 1, which has a complex permeability frequency response of a relatively broad band where a relative bandwidth bwr is 150% or more, said relative bandwidth bwr is determined as a percentage ratio of bandwidth between two frequency points which shows the complex permeability as a half value μ″50 of the maximum μ″max, to center frequency of said bandwidth.

6. The magnetic substance according to claim 5, said metallic magnetic material X having a saturation magnetization, wherein said magnetic composition has a saturation magnetization which is 35-60% of the saturation magnetization of the metallic magnetic material X.

7. The magnetic substance according to claim 5 or 6, wherein said magnetic composition has a DC specific resistance of 500 μΩ·cm or more.

8. The magnetic substance according to any one of claims 1-7, wherein X being C, Bi, Si, Al, Mg, Ti, Zn, Hf, Sr, Nb, Ta, and/or rare-earth metals.

9. The magnetic substance according to any one of claims 1-8, wherein said metallic magnetic material M is distributed as granular grains in a matrix composition consisting of X and Y.

10. The magnetic substance according to claim 8, wherein said granular grains have an average grain size of 1-40 nm.

11. The magnetic substance according to any one of claims 1-10, wherein said magnetic composition has an anisotropy field of 600 Oe or less.

12. The magnetic substance according to any one of claims 1-11, wherein said magnetic composition is a composition represented by a formula of Feα—Al62—Oγ.

13. The magnetic substance according to any one of claims 1-11, wherein said magnetic composition is a composition represented by a formula of Feα—Siβ—Oγ.

14. The magnetic substance according to any one of claims 1-13, wherein said magnetic composition is a thin film formed by sputtering process.

15. The magnetic substance according to any one of claims 1-13, wherein said magnetic composition is a thin film formed by vapor deposition process.

16. The magnetic substance according to any one of claims 1-15, which is formed as a plate having a thickness of 0.3-20 μcm for use as a high frequency noise suppressor.

17. A method for suppressing a high frequency noise from flowing in a circuit line in an electronic device characterized by disposing said plate of claim 16 adjacent to, or directly onto said electronic device.