Claims
- 1-11. (canceled).
- 12. A method of making an infrared transparent conducting oxide film on an infrared transparent substrate comprising the steps of:
a. preparing a precursor solution comprising nitrates of two transition metals and a reducing agent; b. spin casting said precursor solution to form a film on said infrared transparent substrate; and c. inducing said transparent conducting oxide formation on said infrared transparent substrate by thermal treatment of said film.
- 13. The method as recited in claim 12, wherein said two transition metals are selected from the group consisting of of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, and Pt.
- 14. The method as recited in claim 12, wherein said precursor solution further comprises up to about 10 percent Li.
- 15. The method as recited in claim 12, wherein said infrared transparent conducting oxide optical film is a NiCo2O4 composition.
- 16. The method as recited in claim 12, wherein said infrared transparent conducting oxide optical film is a PdNi2O4 composition.
- 17. The method as recited in claim 12, wherein said reducing agent is malonic acid.
- 18. The method as recited in claim 12, wherein said reducing agent is glycine.
- 19. The method as recited in claim 12, wherein said infrared transparent substrate is selected from the group consisting of sapphire, silicon, zinc selenide and quartz.
- 20. The method as recited in claim 12, wherein said infrared transparent substrate is sapphire.
- 21. The method as recited in claim 12, wherein said infrared transparent substrate is quartz.
- 22. A method of making an infrared transparent conducting oxide film on an infrared transparent substrate comprising the steps of:
a. preparing an alloy of said two different transition metals at a desired concentration ratio to be present in conducting oxide film, b. using said metal alloy as a metal target for rf magentron sputtering; and c. sputtering said alloy as a film onto said infrared transparent substrate in an atmosphere of pure oxygen at a partial pressure.
- 23. The method as recited in claim 22, wherein said two transition metals are selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, and Pt.
- 24. The method as recited in claim 22, wherein said infrared transparent conducting oxide optical film is a NiCo2O4 composition.
- 25. The method as recited in claim 22, wherein said infrared transparent conducting oxide optical film is a PdNi2O4 composition.
- 26. The method as recited in claim 22, wherein said infrared transparent substrate is selected from the group consisting of sapphire, silicon, zinc selenide and quartz.
- 27. The method as recited in claim 22, wherein said infrared transparent substrate is sapphire.
- 28. The method as recited in claim 22, wherein said infrared transparent substrate is quartz.
- 29. A method of making an infrared transparent conducting oxide film comprising a mixed transition metal oxide spinel compound of the form M11-xM2xO4/3, wherein M1 and M2 are two different transition metals and x is less than or equal to 1 on an infrared transparent substrate, comprising the steps of:
a. preparing a precursor solution comprising nitrates of two transition metals and a reducing agent; b. spin casting said precursor solution to form a film on said infrared transparent substrate; and c. inducing said transparent conducting oxide formation on said infrared transparent substrate by thermal treatment of said film.
- 30. The method as recited in claim 29, wherein said two transition metals are selected from the group consisting of of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, and Pt.
- 31. The method as recited in claim 29, wherein said infrared transparent conducting oxide optical film is a NiCo2O4 composition.
- 32. The method as recited in claim 29, wherein said infrared transparent conducting oxide optical film is a PdNi2O4 composition.
- 33. The method as recited in claim 29, wherein said reducing agent is malonic acid.
- 34. The method as recited in claim 29, wherein said reducing agent is glycine.
- 35. The method as recited in claim 29, wherein said infrared transparent substrate is selected from the group consisting of sapphire, silicon, zinc selenide and quartz.
- 36. The method as recited in claim 29, wherein said infrared transparent substrate is sapphire.
- 37. The method as recited in claim 29, wherein said infrared transparent substrate is quartz.
- 38. A method of making an infrared transparent conducting oxide film comprising a mixed transition metal oxide spinel compound of the form M11-xM2xO4/3, wherein M1 and M2 are two different transition metals and x is less than or equal to 1, on an infrared transparent substrate comprising the steps of:
a. preparing an alloy of said two different transition metals at a desired concentration ratio to be present in conducting oxide film, b. using said metal alloy as a metal target for rf magentron sputtering; and c. sputtering said alloy as a film onto said infrared transparent substrate in an atmosphere of pure oxygen at a partial pressure.
- 39. The method as recited in claim 38, wherein said two transition metals are selected from the group consisting of of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, and Pt.
- 40. The method as recited in claim 38, wherein said infrared transparent conducting oxide optical film is a NiCo2O4 composition.
- 41. The method as recited in claim 38, wherein said infrared transparent conducting oxide optical film is a PdNi2O4 composition.
- 42. The method as recited in claim 38, wherein said infrared transparent substrate is selected from the group consisting of sapphire, silicone, zinc selenide and quartz.
- 43. The method as recited in claim 38, wherein said infrared transparent substrate is sapphire.
- 44. The method as recited in claim 38, wherein said infrared transparent substrate is quartz.
CROSS REFERENCE TO RELATED APPLICATION
[0001] This is a Continuation-In-Part of U.S. patent application Ser. No. 09/685,013 filed Oct. 5, 2000.
Government Interests
[0002] This invention was made with Government support under Contract DE-AC0676RLO1830 awarded by the U.S. Department of Energy. The Government has certain rights in the invention
Divisions (1)
|
Number |
Date |
Country |
Parent |
09972237 |
Oct 2001 |
US |
Child |
10854546 |
May 2004 |
US |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
09685013 |
Oct 2000 |
US |
Child |
09972237 |
Oct 2001 |
US |