The main pole 20 resides on an underlayer 12 and includes sidewalls 22 and 24. The sidewalls 22 and 24 of the conventional main pole 20 form an angle with the down track direction at the ABS. The side shields 16 are separated from the main pole 20 by a side gap 14. The side shields 16 extend at least from the top of the main pole 20 to the bottom of the main pole 20. The side shields 16 also extend a distance back from the ABS. The gap 14 between the side shields 16 and the main pole 20 may have a substantially constant thickness. Thus, the side shields 16 are conformal with the main pole 20.
Although the conventional magnetic recording head 10 functions, there are drawbacks. In particular, the conventional magnetic recording head 10 may not perform sufficiently at higher recording densities. For example, at higher recording densities, a shingle recording scheme may be desired to be sued. In shingle recording, successive tracks partially overwrite previously written tracks in one direction only. Part of the overwritten tracks, such as their edges, are preserved as the recorded data. In shingle recording, the size of the main pole 20 may be increased for a given track size. However, in order to mitigate issues such as track edge curvature, shingle writers have very narrow side gaps 14. Other design requirements may also be present. The magnetic transducer 10 may not perform as desired or meet the design requirements for such recording schemes. Without such recording schemes, the conventional transducer 10 may not adequately perform at higher areal densities. Accordingly, what is needed is a system and method for improving the performance of a magnetic recording head.
An intermediate layer including at least multiple sublayers is provided, via step 102. In at least the region in which the pole tip and side shields are to be formed (shield region), the intermediate layer includes a first sublayer, a second sublayer and at least one etch stop layer between the first and second sublayers. In some embodiments, the first and second sublayers include the same material, such as aluminum oxide or silicon oxide. In other embodiments, the first and second sublayers may include different material(s). The etch stop layer is resistance to an etch (such as a wet etch) of the second sublayer. In some embodiments, for example, the etch stop layer may include silicon nitride and/or silicon oxide. The etch stop layer may also be thin. For example, the etch stop layer may be 8-12 nm thick. In some embodiments, step 102 includes full-film depositing a first layer, full film depositing an etch stop layer and full film depositing a second layer. In an embodiment, the portions of these layers outside of the side shield region and pole tip region may be removed. The first and second sublayers and etch stop layer may thus remain in the side shield region. The third sublayer may then be deposited and the layer(s) planarized. Thus, the intermediate layer may be formed.
A trench is formed in an intermediate layer using one or more etches, via step 104. The trench formed has the desired geometry and location for formation of the main pole. For example, the top of the trench may be wider than the bottom so that the top of the main pole may be wider than the bottom. The trench extends at least partially into the first sublayer in the shield region. In some embodiments, some or all of the trench may extend through the first sublayer. However, if a leading edge bevel is desired, the bottom of the trench may slope in the down track direction. In such embodiments, the portion of the trench at the ABS may not extend through the first sublayer. However, apertures that are the upper portions of the trench are generally formed in the second sublayer and etch stop layer.
The main pole is provided in the trench, via step 106. In some embodiments, step 106 includes depositing a seed layer, such as Ru and/or magnetic seed layer(s). High saturation magnetization magnetic material(s) are also provided. For example, such magnetic materials may be plated and/or vacuum deposited. The material(s) may be planarized. Further, a trailing bevel may be formed in the main pole. Formation of the trailing bevel may include covering a portion of the main pole recessed from the ABS and then ion milling the main pole at an angle from the down track direction. This step may be performed after formation of the side shields. The pole formed in step 106 may be conformal to the trench, nonconformal with the trench, or include both conformal and nonconformal portions.
An asymmetric gap is provided, via step 108. The asymmetric gap terminates at different distances from the top of the pole on the sides of the main pole. In addition, the gap may be thicker on one side of the pole than on the other side of the main pole. Formation of the gap in step 108 may include covering the pole and the intermediate layer on one side of the main pole. The second sublayer is removed on the exposed side of the main pole in the side shield region. Thus, the etch stop layer may be exposed in this region. A nonmagnetic gap layer, such as Ru is deposited after removal of the mask. Another portion of the intermediate layer on the opposite side of the main pole may be removed. A second nonmagnetic layer may be deposited in at least the side shield region. The second nonmagnetic layer may also be Ru. The first and second nonmagnetic layers may form the asymmetric gap on the first side and top of the main pole. The second nonmagnetic layer may form the asymmetric gap on the second side of the main pole. The top of the asymmetric gap extends closer to the top of the main pole on the first side than on the second side. The bottom of the asymmetric gap may be on the etch stop layer on both sides of the main pole. The asymmetric gap is also thicker on the first side than on the second side.
The asymmetric shield(s) are provided in the shield region, via step 110. Step 110 may include plating or otherwise providing the material(s) for the side shields. Because the gap is asymmetric, the bottom of the side shields extend different distances along the sides of the main pole on the first side than on the second side. The asymmetric shield terminates on top of the asymmetric gap. Thus, the asymmetric side shield extends closer to the bottom of the main pole on the second side than on the first side. In some embodiments, the asymmetric shield terminates between the top and bottom of the main pole on both sides of the pole. Thus, the asymmetric shield(s) may be termed asymmetric half side shields. Note, however, that the asymmetric shields need not extend precisely halfway down between the top and bottom of the main pole on either side of the main pole. Instead, the asymmetric side shields may terminate somewhere between the top and bottom of the main pole. In some embodiments, the asymmetric shield may be configured such that the asymmetric shield terminates at or above the top of the main pole on the first side.
Using the method 100, a magnetic transducer having improved performance may be fabricated. A shingle writer may not need to have side shield(s) which extend to the bottom of the main pole. Thus, the method 100 may provide a main pole that may be used in shingle recording. Thus, the benefits of shingle recording may be exploited. The location of the bottom of the asymmetric shields may be set by the thicknesses of the first and second gap layers as well as the location of the etch stop layer. Thus, the side shield geometry may be tailored.
The disk drive includes a media 202, and a slider 204 on which a transducer 200 have been fabricated. Although not shown, the slider 204 and thus the transducer 200 are generally attached to a suspension. In general, the slider 204 includes the write transducer 200 and a read transducer (not shown). However, for clarity, only the write transducer 200 is shown.
The transducer 200 includes an underlayer 206, an intermediate layer 208, a main pole 210, coil(s) 220, asymmetric gap 230 and asymmetric shields 240. The underlayer 206 may include a bottom (or leading edge) shield. The coil(s) 220 are used to energize the main pole 210. Two turns are depicted in
The intermediate layer 208 may include one or more sublayers as well as an etch stop layer. However, one or more of the sublayers may have been removed for formation of the asymmetric gap 230 and asymmetric shields 240. Further, the intermediate layer may also include different layers in regions recessed from the ABS.
The main pole 210 is shown as having a top wider than the bottom. The main pole 210 thus includes sidewalls having sidewall angles that are greater than or equal to zero. In an embodiment, these sidewall angles differ at different distances from the ABS. In some embodiments, the sidewall angles at the ABS are at least three degrees and not more than fifteen degrees. In other embodiments, other geometries may be used. For example, the top may be the same size as or smaller than the bottom. The sidewall angles may vary in another manner including, but not limited to, remaining substantially constant. The main pole 210 may be being conformal with the trench in the intermediate layer 208. In other embodiments, however, at least a portion of the main pole 210 may not be conformal with the sides of the trench. In some embodiments, the main pole 210 may have leading surface bevel 212 and/or a trailing surface bevel 214, as shown in
As can be seen in
The asymmetric shields 240 are shown as including a trailing shield portion and half side shield portions. In other embodiments, the trailing shield portion may be omitted. This is denoted by a dotted line in
The magnetic transducer 200 in the disk drive may be used in shingle recording. Thus, the benefits of shingle recording may be achieved. For example, higher areal density recording may be performed by a head having larger critical dimensions.
A portion of the intermediate layer adjacent to one side of the pole is removed, via step 122. In some embodiments, step 122 includes providing a mask that covers the pole and another portion of the intermediate layer along the second, opposite side of the pole. The portion of the intermediate layer may be removed via a wet etch or, in some embodiments, another process such as an RIE. The etch terminates at the etch stop layer. Thus, the second sublayer along the first side of the pole may be removed. The mask may then be removed.
A first nonmagnetic layer is then provided, via step 124. Step 124 may include depositing a Ru layer, for example via chemical vapor deposition, sputtering or another method. In some embodiments, the first nonmagnetic layer extends across the top of the pole. In other embodiments, the first nonmagnetic layer is only on the first side of the pole. For example, the layer may be provided before removal or the mask or the portion of the layer on the top of the pole may be removed. A portion of the first nonmagnetic layer may also reside on the etch stop layer. In some embodiments, step 124 may include refilling the region adjacent to the first side of the main pole with a nonmagnetic material, such as aluminum oxide. Such a refill step may be used to provide a more flat topography for subsequent steps.
A portion of the intermediate layer adjacent to the second side of the main pole is removed, via step 126. Step 126 may be performed in an analogous manner to step 122. Thus, the etch stop layer may be exposed along the second side of the main pole. In some embodiments, the top of the first nonmagnetic layer is exposed along the first side of the main pole.
A second nonmagnetic layer is provided, via step 128. Step 128 may be analogous to step 124. For example, a Ru layer may be deposited. In some embodiments, the first and second nonmagnetic layers have different thicknesses. For example, the first nonmagnetic layer may be thicker than the second nonmagnetic layer. In other embodiments, the thicknesses may be the same. Fabrication of the magnetic transducer may then be completed.
The transducer 200′ is analogous to the transducer 200 and disk drive depicted in
As can be seen in
The magnetic transducer 200′ in the disk drive may be used in shingle recording. Thus, the benefits of shingle recording may be achieved. For example, higher areal density recording may be performed by a head having larger critical dimensions.
The material(s) for the first sublayer are full-film deposited, via step 152. In some embodiments, step 152 includes full-film depositing aluminum oxide. The materials for the etch stop layer are provided, via step 154. Step 154 may include full-film depositing silicon dioxide or another material that is resistant to an aluminum oxide wet etch. The material(s) for the second sublayer are provided, via step 156. Step 156 may include full-film depositing aluminum oxide on the silicon oxide layer. In addition, steps 152, 154, and 156 may be carried out so that the structure including two sublayers separated by the etch stop layer are only in the shield region.
A trench is formed in the intermediate layer, via step 158. Step 158 may include multiple substeps. For example, a mask including an aperture that corresponds to a trench may be provided on the intermediate layer 260. This may be accomplished using a photoresist line mask. For example, first and second hard mask layers, such as Ta and Ru, may be full film deposited. The Ta mask layer and the Ru mask layer may each be nominally fifty nanometers thick. A photoresist mask having a line corresponding to the region of the pole near the ABS is then fabricated on the first and second hard mask layers. A third hard mask layer, such as Ta, may be provided on the first and second hard mask layers and the photoresist mask. This hard mask layer may be a Ta layer that is nominally twenty nanometer thick. The photoresist mask is then removed. The location of the photoresist mask forms the location of the aperture in the hard mask layers. The photoresist mask removal may be carried out by side milling the photoresist mask to remove the third hard mask layer, then performing a lift off. A trench is formed in region of the intermediate layer 260 that is exposed by the aperture in the hard mask layers. Step 166 may include performing an aluminum oxide RIE (or other RIE(s) appropriate for the layers 262, 264 and 266). This RIE may remove the hard mask layers under the aperture in the third hard mask layer or these hard mask layers may be removed in another manner. In some embodiments, multiple RIEs are used to obtain the desired trench profile for various regions of the transducer 250. For example, fluorine-based and/or chlorine-based RIE(s) may be performed.
Seed layer(s) that are resistant to an etch of the intermediate layer 260 is deposited in the trench, via step 160. In some embodiments, this seed layer may serve as at least part of the gap. The seed layer may include material(s) such as Ru deposited using methods such as chemical vapor deposition. In other embodiments, a magnetic seed layer may be used in lieu of or in addition to a nonmagnetic seed layer.
The material(s) for the main pole may then be provided, via step 162. Step 162 includes depositing high saturation magnetization magnetic material(s), for example via electroplating. In some embodiments, the pole materials provided in step 162 fills the trench 277. However, in other embodiments, the pole may occupy only a portion of the trench.
A planarization, such as a chemical mechanical planarization (CMP) may also be performed, via step 164. In some embodiments, a trailing edge (top) bevel may be formed at this time. In other embodiments, however, the trailing bevel may be formed layer. A mill may also be used to remove the mask 270.
A portion of the intermediate layer 260 adjacent to the first side of the main pole 280 may be removed, via step 166. In particular, a portion of the second sublayer adjacent to the first side of the main pole 280 may be removed in at least the region in which the shields are to be formed. Step 166 includes providing a mask that covers the main pole 280 and the second sublayer on the second side of the main pole 280. In some embodiments, the removal of the second sublayer may be performed using a wet etch, such as an aluminum oxide wet etch. After the etch, the mask may be removed.
A first nonmagnetic layer for the asymmetric gap is provided, via step 168. Step 168 includes depositing a Ru layer, for example via chemical vapor deposition.
The region above the portion of the first nonmagnetic layer 292 that is lower than the top of the pole 280 is desired to be refilled. Thus, a sacrificial layer is provided, via step 170. Step 170 may include depositing an aluminum oxide layer and then planarizing the layer.
A trailing bevel may optionally be provided in step 172. Step 172 may include removing the portion of the first nonmagnetic layer 292 on top of the main pole 280, for example via an ion mill. A mask the covers part of the main pole 280 recessed from the ABS but leaves the portion of the main pole near the ABS uncovered may then be formed. For example, a Ru layer may be full film deposited, then patterned using a photoresist mask that is recessed from the ABS. An ion mill may then be performed. Because of shadowing due to the masks, the top of the main pole 280 may be removed such that the top of the main pole 280 is at a nonzero angle from a direction perpendicular to the ABS. Other methods could also be used to form the trailing bevel.
The portion of the second sublayer 266″ that is adjacent to the second side of the main pole 280 is removed in at least the region in which the shields are to be formed, via step 174. Also in step 174, the refill 293′ may be removed in at least the region in which the shields are to be formed. Step 174 may include multiple substeps. For example, a mask that covers the main pole 280 but uncovers portions of the intermediate layer 260′ and refill 293′ is provided.
A second nonmagnetic layer that is to form part of the asymmetric gap is deposited, via step 176. Step 176 may include depositing a nonmagnetic layer using chemical vapor deposition, sputtering, plating or another method.
The asymmetric shield(s) may be provided, via step 178. Step 178 may include depositing a seed layer as well as the material(s) for the shields. For example, a seed layer may be deposited, followed by electroplating of a magnetic material such as NiFe. In some embodiments, the asymmetric shields are part of a wraparound shield. Thus, step 178 may also include providing a wraparound shield. If the layer 296 is not to form the write gap, then a write gap layer may also be provided.
Using the method 150, the transducer 250 including shield 300 may be provided. Thus, the benefits of shingle recording may be achieved. For example, higher areal density recording may be performed by a head having larger critical dimensions.
This application is a divisional application of U.S. application Ser. No. 14/289,345, filed May 28, 2014, entitled “METHOD FOR FABRICATING A MAGNETIC WRITER HAVING AN ASYMMETRIC GAP AND SHIELDS” now U.S. Pat No. 9,153,255 B1 issued on Oct. 6, 2015, which claims priority to provisional U.S. Patent Application Ser. No. 61/948,417, filed on Mar. 5, 2014, which is hereby incorporated by reference in its entirety.
Number | Name | Date | Kind |
---|---|---|---|
6016290 | Chen et al. | Jan 2000 | A |
6018441 | Wu et al. | Jan 2000 | A |
6025978 | Hoshi et al. | Feb 2000 | A |
6025988 | Yan | Feb 2000 | A |
6032353 | Hiner et al. | Mar 2000 | A |
6033532 | Minami | Mar 2000 | A |
6034851 | Zarouri et al. | Mar 2000 | A |
6043959 | Crue et al. | Mar 2000 | A |
6046885 | Aimonetti et al. | Apr 2000 | A |
6049650 | Jerman et al. | Apr 2000 | A |
6055138 | Shi | Apr 2000 | A |
6058094 | Davis et al. | May 2000 | A |
6073338 | Liu et al. | Jun 2000 | A |
6078479 | Nepela et al. | Jun 2000 | A |
6081499 | Berger et al. | Jun 2000 | A |
6094803 | Carlson et al. | Aug 2000 | A |
6099362 | Viches et al. | Aug 2000 | A |
6103073 | Thayamballi | Aug 2000 | A |
6108166 | Lederman | Aug 2000 | A |
6118629 | Huai et al. | Sep 2000 | A |
6118638 | Knapp et al. | Sep 2000 | A |
6125018 | Takagishi et al. | Sep 2000 | A |
6130779 | Carlson et al. | Oct 2000 | A |
6134089 | Barr et al. | Oct 2000 | A |
6136166 | Shen et al. | Oct 2000 | A |
6137661 | Shi et al. | Oct 2000 | A |
6137662 | Huai et al. | Oct 2000 | A |
6160684 | Heist et al. | Dec 2000 | A |
6163426 | Nepela et al. | Dec 2000 | A |
6166891 | Lederman et al. | Dec 2000 | A |
6173486 | Hsiao et al. | Jan 2001 | B1 |
6175476 | Huai et al. | Jan 2001 | B1 |
6178066 | Barr | Jan 2001 | B1 |
6178070 | Hong et al. | Jan 2001 | B1 |
6178150 | Davis | Jan 2001 | B1 |
6181485 | He | Jan 2001 | B1 |
6181525 | Carlson | Jan 2001 | B1 |
6185051 | Chen et al. | Feb 2001 | B1 |
6185077 | Tong et al. | Feb 2001 | B1 |
6185081 | Simion et al. | Feb 2001 | B1 |
6188549 | Wiitala | Feb 2001 | B1 |
6190764 | Shi et al. | Feb 2001 | B1 |
6193584 | Rudy et al. | Feb 2001 | B1 |
6195229 | Shen et al. | Feb 2001 | B1 |
6198608 | Hong et al. | Mar 2001 | B1 |
6198609 | Barr et al. | Mar 2001 | B1 |
6201673 | Rottmayer et al. | Mar 2001 | B1 |
6204998 | Katz | Mar 2001 | B1 |
6204999 | Crue et al. | Mar 2001 | B1 |
6212153 | Chen et al. | Apr 2001 | B1 |
6215625 | Carlson | Apr 2001 | B1 |
6219205 | Yuan et al. | Apr 2001 | B1 |
6221218 | Shi et al. | Apr 2001 | B1 |
6222707 | Huai et al. | Apr 2001 | B1 |
6229782 | Wang et al. | May 2001 | B1 |
6230959 | Heist et al. | May 2001 | B1 |
6233116 | Chen et al. | May 2001 | B1 |
6233125 | Knapp et al. | May 2001 | B1 |
6237215 | Hunsaker et al. | May 2001 | B1 |
6252743 | Bozorgi | Jun 2001 | B1 |
6255721 | Roberts | Jul 2001 | B1 |
6258468 | Mahvan et al. | Jul 2001 | B1 |
6266216 | Hikami et al. | Jul 2001 | B1 |
6271604 | Frank, Jr. et al. | Aug 2001 | B1 |
6275354 | Huai et al. | Aug 2001 | B1 |
6277505 | Shi et al. | Aug 2001 | B1 |
6282056 | Feng et al. | Aug 2001 | B1 |
6296955 | Hossain et al. | Oct 2001 | B1 |
6297955 | Frank, Jr. et al. | Oct 2001 | B1 |
6304414 | Crue, Jr. et al. | Oct 2001 | B1 |
6307715 | Berding et al. | Oct 2001 | B1 |
6310746 | Hawwa et al. | Oct 2001 | B1 |
6310750 | Hawwa et al. | Oct 2001 | B1 |
6317290 | Wang et al. | Nov 2001 | B1 |
6317297 | Tong et al. | Nov 2001 | B1 |
6322911 | Fukagawa et al. | Nov 2001 | B1 |
6330136 | Wang et al. | Dec 2001 | B1 |
6330137 | Knapp et al. | Dec 2001 | B1 |
6333830 | Rose et al. | Dec 2001 | B2 |
6340533 | Ueno et al. | Jan 2002 | B1 |
6349014 | Crue, Jr. et al. | Feb 2002 | B1 |
6351355 | Min et al. | Feb 2002 | B1 |
6353318 | Sin et al. | Mar 2002 | B1 |
6353511 | Shi et al. | Mar 2002 | B1 |
6356412 | Levi et al. | Mar 2002 | B1 |
6359779 | Frank, Jr. et al. | Mar 2002 | B1 |
6369983 | Hong | Apr 2002 | B1 |
6376964 | Young et al. | Apr 2002 | B1 |
6377535 | Chen et al. | Apr 2002 | B1 |
6381095 | Sin et al. | Apr 2002 | B1 |
6381105 | Huai et al. | Apr 2002 | B1 |
6389499 | Frank, Jr. et al. | May 2002 | B1 |
6392850 | Tong et al. | May 2002 | B1 |
6396660 | Jensen et al. | May 2002 | B1 |
6399179 | Hanrahan et al. | Jun 2002 | B1 |
6400526 | Crue, Jr. et al. | Jun 2002 | B2 |
6404600 | Hawwa et al. | Jun 2002 | B1 |
6404601 | Rottmayer et al. | Jun 2002 | B1 |
6404706 | Stovall et al. | Jun 2002 | B1 |
6410170 | Chen et al. | Jun 2002 | B1 |
6411522 | Frank, Jr. et al. | Jun 2002 | B1 |
6417998 | Crue, Jr. et al. | Jul 2002 | B1 |
6417999 | Knapp et al. | Jul 2002 | B1 |
6418000 | Gibbons et al. | Jul 2002 | B1 |
6418048 | Sin et al. | Jul 2002 | B1 |
6421211 | Hawwa et al. | Jul 2002 | B1 |
6421212 | Gibbons et al. | Jul 2002 | B1 |
6424505 | Lam et al. | Jul 2002 | B1 |
6424507 | Lederman et al. | Jul 2002 | B1 |
6430009 | Komaki et al. | Aug 2002 | B1 |
6430806 | Chen et al. | Aug 2002 | B1 |
6433965 | Gopinathan et al. | Aug 2002 | B1 |
6433968 | Shi et al. | Aug 2002 | B1 |
6433970 | Knapp et al. | Aug 2002 | B1 |
6437945 | Hawwa et al. | Aug 2002 | B1 |
6445536 | Rudy et al. | Sep 2002 | B1 |
6445542 | Levi et al. | Sep 2002 | B1 |
6445553 | Barr et al. | Sep 2002 | B2 |
6445554 | Dong et al. | Sep 2002 | B1 |
6447935 | Zhang et al. | Sep 2002 | B1 |
6448765 | Chen et al. | Sep 2002 | B1 |
6451514 | Iitsuka | Sep 2002 | B1 |
6452742 | Crue et al. | Sep 2002 | B1 |
6452765 | Mahvan et al. | Sep 2002 | B1 |
6456465 | Louis et al. | Sep 2002 | B1 |
6459552 | Liu et al. | Oct 2002 | B1 |
6462920 | Karimi | Oct 2002 | B1 |
6466401 | Hong et al. | Oct 2002 | B1 |
6466402 | Crue, Jr. et al. | Oct 2002 | B1 |
6466404 | Crue, Jr. et al. | Oct 2002 | B1 |
6468436 | Shi et al. | Oct 2002 | B1 |
6469877 | Knapp et al. | Oct 2002 | B1 |
6477019 | Matono et al. | Nov 2002 | B2 |
6479096 | Shi et al. | Nov 2002 | B1 |
6483662 | Thomas et al. | Nov 2002 | B1 |
6487040 | Hsiao et al. | Nov 2002 | B1 |
6487056 | Gibbons et al. | Nov 2002 | B1 |
6490125 | Barr | Dec 2002 | B1 |
6496330 | Crue, Jr. et al. | Dec 2002 | B1 |
6496334 | Pang et al. | Dec 2002 | B1 |
6504676 | Hiner et al. | Jan 2003 | B1 |
6512657 | Heist et al. | Jan 2003 | B2 |
6512659 | Hawwa et al. | Jan 2003 | B1 |
6512661 | Louis | Jan 2003 | B1 |
6512690 | Qi et al. | Jan 2003 | B1 |
6515573 | Dong et al. | Feb 2003 | B1 |
6515791 | Hawwa et al. | Feb 2003 | B1 |
6532823 | Knapp et al. | Mar 2003 | B1 |
6535363 | Hosomi et al. | Mar 2003 | B1 |
6552874 | Chen et al. | Apr 2003 | B1 |
6552928 | Qi et al. | Apr 2003 | B1 |
6577470 | Rumpler | Jun 2003 | B1 |
6583961 | Levi et al. | Jun 2003 | B2 |
6583968 | Scura et al. | Jun 2003 | B1 |
6597548 | Yamanaka et al. | Jul 2003 | B1 |
6611398 | Rumpler et al. | Aug 2003 | B1 |
6618223 | Chen et al. | Sep 2003 | B1 |
6629357 | Akoh | Oct 2003 | B1 |
6633464 | Lai et al. | Oct 2003 | B2 |
6636394 | Fukagawa et al. | Oct 2003 | B1 |
6639291 | Sin et al. | Oct 2003 | B1 |
6650503 | Chen et al. | Nov 2003 | B1 |
6650506 | Risse | Nov 2003 | B1 |
6654195 | Frank, Jr. et al. | Nov 2003 | B1 |
6657816 | Barr et al. | Dec 2003 | B1 |
6661621 | Iitsuka | Dec 2003 | B1 |
6661625 | Sin et al. | Dec 2003 | B1 |
6674610 | Thomas et al. | Jan 2004 | B1 |
6680863 | Shi et al. | Jan 2004 | B1 |
6683763 | Hiner et al. | Jan 2004 | B1 |
6687098 | Huai | Feb 2004 | B1 |
6687178 | Qi et al. | Feb 2004 | B1 |
6687977 | Knapp et al. | Feb 2004 | B2 |
6691226 | Frank, Jr. et al. | Feb 2004 | B1 |
6697294 | Qi et al. | Feb 2004 | B1 |
6700738 | Sin et al. | Mar 2004 | B1 |
6700759 | Knapp et al. | Mar 2004 | B1 |
6704158 | Hawwa et al. | Mar 2004 | B2 |
6707083 | Hiner et al. | Mar 2004 | B1 |
6713801 | Sin et al. | Mar 2004 | B1 |
6721138 | Chen et al. | Apr 2004 | B1 |
6721149 | Shi et al. | Apr 2004 | B1 |
6721203 | Qi et al. | Apr 2004 | B1 |
6724569 | Chen et al. | Apr 2004 | B1 |
6724572 | Stoev et al. | Apr 2004 | B1 |
6729015 | Matono et al. | May 2004 | B2 |
6735850 | Gibbons et al. | May 2004 | B1 |
6737281 | Dang et al. | May 2004 | B1 |
6744608 | Sin et al. | Jun 2004 | B1 |
6747301 | Hiner et al. | Jun 2004 | B1 |
6751055 | Alfoqaha et al. | Jun 2004 | B1 |
6754049 | Seagle et al. | Jun 2004 | B1 |
6756071 | Shi et al. | Jun 2004 | B1 |
6757140 | Hawwa | Jun 2004 | B1 |
6760196 | Niu et al. | Jul 2004 | B1 |
6762910 | Knapp et al. | Jul 2004 | B1 |
6765756 | Hong et al. | Jul 2004 | B1 |
6775902 | Huai et al. | Aug 2004 | B1 |
6778358 | Jiang et al. | Aug 2004 | B1 |
6781927 | Heanuc et al. | Aug 2004 | B1 |
6785955 | Chen et al. | Sep 2004 | B1 |
6791793 | Chen et al. | Sep 2004 | B1 |
6791807 | Hikami et al. | Sep 2004 | B1 |
6798616 | Seagle et al. | Sep 2004 | B1 |
6798625 | Ueno et al. | Sep 2004 | B1 |
6801408 | Chen et al. | Oct 2004 | B1 |
6801411 | Lederman et al. | Oct 2004 | B1 |
6803615 | Sin et al. | Oct 2004 | B1 |
6806035 | Atireklapvarodom et al. | Oct 2004 | B1 |
6807030 | Hawwa et al. | Oct 2004 | B1 |
6807332 | Hawwa | Oct 2004 | B1 |
6809899 | Chen et al. | Oct 2004 | B1 |
6816345 | Knapp et al. | Nov 2004 | B1 |
6828897 | Nepela | Dec 2004 | B1 |
6829160 | Qi et al. | Dec 2004 | B1 |
6829819 | Crue, Jr. et al. | Dec 2004 | B1 |
6833979 | Knapp et al. | Dec 2004 | B1 |
6834010 | Qi et al. | Dec 2004 | B1 |
6859343 | Alfoqaha et al. | Feb 2005 | B1 |
6859997 | Tong et al. | Mar 2005 | B1 |
6861937 | Feng et al. | Mar 2005 | B1 |
6870712 | Chen et al. | Mar 2005 | B2 |
6873494 | Chen et al. | Mar 2005 | B2 |
6873547 | Shi et al. | Mar 2005 | B1 |
6879464 | Sun et al. | Apr 2005 | B2 |
6888184 | Shi et al. | May 2005 | B1 |
6888704 | Diao et al. | May 2005 | B1 |
6891702 | Tang | May 2005 | B1 |
6894871 | Alfoqaha et al. | May 2005 | B2 |
6894877 | Crue, Jr. et al. | May 2005 | B1 |
6906894 | Chen et al. | Jun 2005 | B2 |
6909578 | Missell et al. | Jun 2005 | B1 |
6912106 | Chen et al. | Jun 2005 | B1 |
6934113 | Chen | Aug 2005 | B1 |
6934129 | Zhang et al. | Aug 2005 | B1 |
6940688 | Jiang et al. | Sep 2005 | B2 |
6942824 | Li | Sep 2005 | B1 |
6943993 | Chang et al. | Sep 2005 | B2 |
6944938 | Crue, Jr. et al. | Sep 2005 | B1 |
6947258 | Li | Sep 2005 | B1 |
6950266 | McCaslin et al. | Sep 2005 | B1 |
6954332 | Hong et al. | Oct 2005 | B1 |
6958885 | Chen et al. | Oct 2005 | B1 |
6961221 | Niu et al. | Nov 2005 | B1 |
6969989 | Mei | Nov 2005 | B1 |
6975486 | Chen et al. | Dec 2005 | B2 |
6987643 | Seagle | Jan 2006 | B1 |
6989962 | Dong et al. | Jan 2006 | B1 |
6989972 | Stoev et al. | Jan 2006 | B1 |
7006327 | Krounbi et al. | Feb 2006 | B2 |
7007372 | Chen et al. | Mar 2006 | B1 |
7012832 | Sin et al. | Mar 2006 | B1 |
7023658 | Knapp et al. | Apr 2006 | B1 |
7026063 | Ueno et al. | Apr 2006 | B2 |
7027268 | Zhu et al. | Apr 2006 | B1 |
7027274 | Sin et al. | Apr 2006 | B1 |
7035046 | Young et al. | Apr 2006 | B1 |
7041985 | Wang et al. | May 2006 | B1 |
7046490 | Ueno et al. | May 2006 | B1 |
7054113 | Seagle et al. | May 2006 | B1 |
7057857 | Niu et al. | Jun 2006 | B1 |
7059868 | Yan | Jun 2006 | B1 |
7092195 | Liu et al. | Aug 2006 | B1 |
7110289 | Sin et al. | Sep 2006 | B1 |
7111382 | Knapp et al. | Sep 2006 | B1 |
7113366 | Wang et al. | Sep 2006 | B1 |
7114241 | Kubota et al. | Oct 2006 | B2 |
7116517 | He et al. | Oct 2006 | B1 |
7124654 | Davies et al. | Oct 2006 | B1 |
7126788 | Liu et al. | Oct 2006 | B1 |
7126790 | Liu et al. | Oct 2006 | B1 |
7131346 | Buttar et al. | Nov 2006 | B1 |
7133253 | Seagle et al. | Nov 2006 | B1 |
7134185 | Knapp et al. | Nov 2006 | B1 |
7154715 | Yamanaka et al. | Dec 2006 | B2 |
7170725 | Zhou et al. | Jan 2007 | B1 |
7177117 | Jiang et al. | Feb 2007 | B1 |
7193815 | Stoev et al. | Mar 2007 | B1 |
7196880 | Anderson et al. | Mar 2007 | B1 |
7199974 | Alfoqaha | Apr 2007 | B1 |
7199975 | Pan | Apr 2007 | B1 |
7211339 | Seagle et al. | May 2007 | B1 |
7212384 | Stoev et al. | May 2007 | B1 |
7238292 | He et al. | Jul 2007 | B1 |
7239478 | Sin et al. | Jul 2007 | B1 |
7248431 | Liu et al. | Jul 2007 | B1 |
7248433 | Stoev et al. | Jul 2007 | B1 |
7248449 | Seagle | Jul 2007 | B1 |
7268971 | Samoto | Sep 2007 | B2 |
7280325 | Pan | Oct 2007 | B1 |
7283327 | Liu et al. | Oct 2007 | B1 |
7284316 | Huai et al. | Oct 2007 | B1 |
7286329 | Chen et al. | Oct 2007 | B1 |
7289303 | Sin et al. | Oct 2007 | B1 |
7292409 | Stoev et al. | Nov 2007 | B1 |
7296339 | Yang et al. | Nov 2007 | B1 |
7307814 | Seagle et al. | Dec 2007 | B1 |
7307818 | Park et al. | Dec 2007 | B1 |
7310204 | Stoev et al. | Dec 2007 | B1 |
7318947 | Park et al. | Jan 2008 | B1 |
7333295 | Medina et al. | Feb 2008 | B1 |
7337530 | Stoev et al. | Mar 2008 | B1 |
7342752 | Zhang et al. | Mar 2008 | B1 |
7349170 | Rudman et al. | Mar 2008 | B1 |
7349179 | He et al. | Mar 2008 | B1 |
7354664 | Jiang et al. | Apr 2008 | B1 |
7363697 | Dunn et al. | Apr 2008 | B1 |
7371152 | Newman | May 2008 | B1 |
7372665 | Stoev et al. | May 2008 | B1 |
7375926 | Stoev et al. | May 2008 | B1 |
7379269 | Krounbi et al. | May 2008 | B1 |
7386933 | Krounbi et al. | Jun 2008 | B1 |
7389577 | Shang et al. | Jun 2008 | B1 |
7417832 | Erickson et al. | Aug 2008 | B1 |
7419891 | Chen et al. | Sep 2008 | B1 |
7428124 | Song et al. | Sep 2008 | B1 |
7430098 | Song et al. | Sep 2008 | B1 |
7436620 | Kang et al. | Oct 2008 | B1 |
7436638 | Pan | Oct 2008 | B1 |
7440220 | Kang et al. | Oct 2008 | B1 |
7443632 | Stoev et al. | Oct 2008 | B1 |
7444740 | Chung et al. | Nov 2008 | B1 |
7493688 | Wang et al. | Feb 2009 | B1 |
7508627 | Zhang et al. | Mar 2009 | B1 |
7522377 | Jiang et al. | Apr 2009 | B1 |
7522379 | Krounbi et al. | Apr 2009 | B1 |
7522382 | Pan | Apr 2009 | B1 |
7542246 | Song et al. | Jun 2009 | B1 |
7551406 | Thomas et al. | Jun 2009 | B1 |
7552523 | He et al. | Jun 2009 | B1 |
7554767 | Hu et al. | Jun 2009 | B1 |
7583466 | Kermiche et al. | Sep 2009 | B2 |
7595967 | Moon et al. | Sep 2009 | B1 |
7639457 | Chen et al. | Dec 2009 | B1 |
7660080 | Liu et al. | Feb 2010 | B1 |
7672080 | Tang et al. | Mar 2010 | B1 |
7672086 | Jiang | Mar 2010 | B1 |
7684160 | Erickson et al. | Mar 2010 | B1 |
7688546 | Bai et al. | Mar 2010 | B1 |
7691434 | Zhang et al. | Apr 2010 | B1 |
7695761 | Shen et al. | Apr 2010 | B1 |
7719795 | Hu et al. | May 2010 | B2 |
7726009 | Liu et al. | Jun 2010 | B1 |
7729086 | Song et al. | Jun 2010 | B1 |
7729087 | Stoev et al. | Jun 2010 | B1 |
7736823 | Wang et al. | Jun 2010 | B1 |
7785666 | Sun et al. | Aug 2010 | B1 |
7796356 | Fowler et al. | Sep 2010 | B1 |
7800858 | Bajikar et al. | Sep 2010 | B1 |
7819979 | Chen et al. | Oct 2010 | B1 |
7829264 | Wang et al. | Nov 2010 | B1 |
7846643 | Sun et al. | Dec 2010 | B1 |
7855854 | Hu et al. | Dec 2010 | B2 |
7869160 | Pan et al. | Jan 2011 | B1 |
7872824 | Macchioni et al. | Jan 2011 | B1 |
7872833 | Hu et al. | Jan 2011 | B2 |
7910267 | Zeng et al. | Mar 2011 | B1 |
7911735 | Sin et al. | Mar 2011 | B1 |
7911737 | Jiang et al. | Mar 2011 | B1 |
7916426 | Hu et al. | Mar 2011 | B2 |
7918013 | Dunn et al. | Apr 2011 | B1 |
7968219 | Jiang et al. | Jun 2011 | B1 |
7982989 | Shi et al. | Jul 2011 | B1 |
8008912 | Shang | Aug 2011 | B1 |
8012804 | Wang et al. | Sep 2011 | B1 |
8015692 | Zhang et al. | Sep 2011 | B1 |
8018677 | Chung et al. | Sep 2011 | B1 |
8018678 | Zhang et al. | Sep 2011 | B1 |
8023231 | Guan et al. | Sep 2011 | B2 |
8024748 | Moravec et al. | Sep 2011 | B1 |
8072705 | Wang et al. | Dec 2011 | B1 |
8074345 | Anguelouch et al. | Dec 2011 | B1 |
8077418 | Hu et al. | Dec 2011 | B1 |
8077434 | Shen et al. | Dec 2011 | B1 |
8077435 | Liu et al. | Dec 2011 | B1 |
8077557 | Hu et al. | Dec 2011 | B1 |
8079135 | Shen et al. | Dec 2011 | B1 |
8081403 | Chen et al. | Dec 2011 | B1 |
8091210 | Sasaki et al. | Jan 2012 | B1 |
8094419 | Guan | Jan 2012 | B2 |
8097846 | Anguelouch et al. | Jan 2012 | B1 |
8104166 | Zhang et al. | Jan 2012 | B1 |
8116043 | Leng et al. | Feb 2012 | B2 |
8116171 | Lee | Feb 2012 | B1 |
8125856 | Li et al. | Feb 2012 | B1 |
8134794 | Wang | Mar 2012 | B1 |
8136224 | Sun et al. | Mar 2012 | B1 |
8136225 | Zhang et al. | Mar 2012 | B1 |
8136805 | Lee | Mar 2012 | B1 |
8141235 | Zhang | Mar 2012 | B1 |
8146236 | Luo et al. | Apr 2012 | B1 |
8149536 | Yang et al. | Apr 2012 | B1 |
8151441 | Rudy et al. | Apr 2012 | B1 |
8163185 | Sun et al. | Apr 2012 | B1 |
8164760 | Willis | Apr 2012 | B2 |
8164855 | Gibbons et al. | Apr 2012 | B1 |
8164864 | Kaiser et al. | Apr 2012 | B2 |
8165709 | Rudy | Apr 2012 | B1 |
8166631 | Tran et al. | May 2012 | B1 |
8166632 | Zhang et al. | May 2012 | B1 |
8169473 | Yu et al. | May 2012 | B1 |
8171618 | Wang et al. | May 2012 | B1 |
8179636 | Bai et al. | May 2012 | B1 |
8191237 | Luo et al. | Jun 2012 | B1 |
8194365 | Leng et al. | Jun 2012 | B1 |
8194366 | Li et al. | Jun 2012 | B1 |
8196285 | Zhang et al. | Jun 2012 | B1 |
8200054 | Li et al. | Jun 2012 | B1 |
8203800 | Li et al. | Jun 2012 | B2 |
8208350 | Hu et al. | Jun 2012 | B1 |
8220140 | Wang et al. | Jul 2012 | B1 |
8222599 | Chien | Jul 2012 | B1 |
8225488 | Zhang et al. | Jul 2012 | B1 |
8227023 | Liu et al. | Jul 2012 | B1 |
8228633 | Tran et al. | Jul 2012 | B1 |
8231796 | Li et al. | Jul 2012 | B1 |
8233248 | Li et al. | Jul 2012 | B1 |
8248896 | Yuan et al. | Aug 2012 | B1 |
8254060 | Shi et al. | Aug 2012 | B1 |
8257597 | Guan et al. | Sep 2012 | B1 |
8259410 | Bai et al. | Sep 2012 | B1 |
8259539 | Hu et al. | Sep 2012 | B1 |
8262918 | Li et al. | Sep 2012 | B1 |
8262919 | Luo et al. | Sep 2012 | B1 |
8264797 | Emley | Sep 2012 | B2 |
8264798 | Guan et al. | Sep 2012 | B1 |
8270126 | Roy et al. | Sep 2012 | B1 |
8276258 | Tran et al. | Oct 2012 | B1 |
8277669 | Chen et al. | Oct 2012 | B1 |
8279719 | Hu et al. | Oct 2012 | B1 |
8284517 | Sun et al. | Oct 2012 | B1 |
8288204 | Wang et al. | Oct 2012 | B1 |
8289821 | Huber | Oct 2012 | B1 |
8291743 | Shi et al. | Oct 2012 | B1 |
8307539 | Rudy et al. | Nov 2012 | B1 |
8307540 | Tran et al. | Nov 2012 | B1 |
8308921 | Hiner et al. | Nov 2012 | B1 |
8310785 | Zhang et al. | Nov 2012 | B1 |
8310901 | Batra et al. | Nov 2012 | B1 |
8315019 | Mao et al. | Nov 2012 | B1 |
8316527 | Hong et al. | Nov 2012 | B2 |
8320076 | Shen et al. | Nov 2012 | B1 |
8320077 | Tang et al. | Nov 2012 | B1 |
8320219 | Wolf et al. | Nov 2012 | B1 |
8320220 | Yuan et al. | Nov 2012 | B1 |
8320722 | Yuan et al. | Nov 2012 | B1 |
8322022 | Yi et al. | Dec 2012 | B1 |
8322023 | Zeng et al. | Dec 2012 | B1 |
8325569 | Shi et al. | Dec 2012 | B1 |
8333008 | Sin et al. | Dec 2012 | B1 |
8334093 | Zhang et al. | Dec 2012 | B2 |
8336194 | Yuan et al. | Dec 2012 | B2 |
8339734 | Pentek | Dec 2012 | B2 |
8339738 | Tran et al. | Dec 2012 | B1 |
8339741 | Zhang et al. | Dec 2012 | B2 |
8341826 | Jiang et al. | Jan 2013 | B1 |
8343319 | Li et al. | Jan 2013 | B1 |
8343364 | Gao et al. | Jan 2013 | B1 |
8349195 | Si et al. | Jan 2013 | B1 |
8351307 | Wolf et al. | Jan 2013 | B1 |
8357244 | Zhao et al. | Jan 2013 | B1 |
8373945 | Luo et al. | Feb 2013 | B1 |
8375564 | Luo et al. | Feb 2013 | B1 |
8375565 | Hu et al. | Feb 2013 | B2 |
8381391 | Park et al. | Feb 2013 | B2 |
8385157 | Champion et al. | Feb 2013 | B1 |
8385158 | Hu et al. | Feb 2013 | B1 |
8394280 | Wan et al. | Mar 2013 | B1 |
8400731 | Li et al. | Mar 2013 | B1 |
8404128 | Zhang et al. | Mar 2013 | B1 |
8404129 | Luo et al. | Mar 2013 | B1 |
8405930 | Li et al. | Mar 2013 | B1 |
8409453 | Jiang et al. | Apr 2013 | B1 |
8413317 | Wan et al. | Apr 2013 | B1 |
8416540 | Li et al. | Apr 2013 | B1 |
8419953 | Su et al. | Apr 2013 | B1 |
8419954 | Chen et al. | Apr 2013 | B1 |
8422176 | Leng et al. | Apr 2013 | B1 |
8422342 | Lee | Apr 2013 | B1 |
8422841 | Shi et al. | Apr 2013 | B1 |
8424192 | Yang et al. | Apr 2013 | B1 |
8441756 | Sun et al. | May 2013 | B1 |
8443510 | Shi et al. | May 2013 | B1 |
8444866 | Guan et al. | May 2013 | B1 |
8449948 | Medina et al. | May 2013 | B2 |
8451556 | Wang et al. | May 2013 | B1 |
8451563 | Zhang et al. | May 2013 | B1 |
8454846 | Zhou et al. | Jun 2013 | B1 |
8455119 | Jiang et al. | Jun 2013 | B1 |
8456961 | Wang et al. | Jun 2013 | B1 |
8456963 | Hu et al. | Jun 2013 | B1 |
8456964 | Yuan et al. | Jun 2013 | B1 |
8456966 | Shi et al. | Jun 2013 | B1 |
8456967 | Mallary | Jun 2013 | B1 |
8458892 | Si et al. | Jun 2013 | B2 |
8462592 | Wolf et al. | Jun 2013 | B1 |
8468682 | Zhang | Jun 2013 | B1 |
8472288 | Wolf et al. | Jun 2013 | B1 |
8480911 | Osugi et al. | Jul 2013 | B1 |
8486285 | Zhou et al. | Jul 2013 | B2 |
8486286 | Gao et al. | Jul 2013 | B1 |
8488272 | Tran et al. | Jul 2013 | B1 |
8491801 | Tanner et al. | Jul 2013 | B1 |
8491802 | Gao et al. | Jul 2013 | B1 |
8493693 | Zheng et al. | Jul 2013 | B1 |
8493695 | Kaiser et al. | Jul 2013 | B1 |
8495813 | Hu et al. | Jul 2013 | B1 |
8498084 | Leng et al. | Jul 2013 | B1 |
8506828 | Osugi et al. | Aug 2013 | B1 |
8514517 | Batra et al. | Aug 2013 | B1 |
8518279 | Wang et al. | Aug 2013 | B1 |
8518832 | Yang et al. | Aug 2013 | B1 |
8520336 | Liu et al. | Aug 2013 | B1 |
8520337 | Liu et al. | Aug 2013 | B1 |
8524068 | Medina et al. | Sep 2013 | B2 |
8526275 | Yuan et al. | Sep 2013 | B1 |
8531801 | Xiao et al. | Sep 2013 | B1 |
8532450 | Wang et al. | Sep 2013 | B1 |
8533937 | Wang et al. | Sep 2013 | B1 |
8537494 | Pan et al. | Sep 2013 | B1 |
8537495 | Luo et al. | Sep 2013 | B1 |
8537502 | Park et al. | Sep 2013 | B1 |
8545999 | Leng et al. | Oct 2013 | B1 |
8547659 | Bai et al. | Oct 2013 | B1 |
8547667 | Roy et al. | Oct 2013 | B1 |
8547730 | Shen et al. | Oct 2013 | B1 |
8555486 | Medina et al. | Oct 2013 | B1 |
8559141 | Pakala et al. | Oct 2013 | B1 |
8563146 | Zhang et al. | Oct 2013 | B1 |
8565049 | Tanner et al. | Oct 2013 | B1 |
8576517 | Tran et al. | Nov 2013 | B1 |
8578594 | Jiang et al. | Nov 2013 | B2 |
8582238 | Liu | Nov 2013 | B1 |
8582241 | Yu et al. | Nov 2013 | B1 |
8582253 | Zheng et al. | Nov 2013 | B1 |
8588039 | Shi et al. | Nov 2013 | B1 |
8593914 | Wang et al. | Nov 2013 | B2 |
8597528 | Roy et al. | Dec 2013 | B1 |
8599520 | Liu et al. | Dec 2013 | B1 |
8599657 | Lee | Dec 2013 | B1 |
8603593 | Roy et al. | Dec 2013 | B1 |
8607438 | Gao et al. | Dec 2013 | B1 |
8607439 | Wang et al. | Dec 2013 | B1 |
8611035 | Bajikar et al. | Dec 2013 | B1 |
8611054 | Shang et al. | Dec 2013 | B1 |
8611055 | Pakala et al. | Dec 2013 | B1 |
8614864 | Hong et al. | Dec 2013 | B1 |
8619512 | Yuan et al. | Dec 2013 | B1 |
8625233 | Ji et al. | Jan 2014 | B1 |
8625941 | Shi et al. | Jan 2014 | B1 |
8628672 | Si et al. | Jan 2014 | B1 |
8630068 | Mauri et al. | Jan 2014 | B1 |
8634280 | Wang et al. | Jan 2014 | B1 |
8638529 | Leng et al. | Jan 2014 | B1 |
8643980 | Fowler et al. | Feb 2014 | B1 |
8649123 | Zhang et al. | Feb 2014 | B1 |
8665561 | Knutson et al. | Mar 2014 | B1 |
8670211 | Sun et al. | Mar 2014 | B1 |
8670213 | Zeng et al. | Mar 2014 | B1 |
8670214 | Knutson et al. | Mar 2014 | B1 |
8670294 | Shi et al. | Mar 2014 | B1 |
8670295 | Hu et al. | Mar 2014 | B1 |
8675318 | Ho et al. | Mar 2014 | B1 |
8675455 | Krichevsky et al. | Mar 2014 | B1 |
8681594 | Shi et al. | Mar 2014 | B1 |
8689430 | Chen et al. | Apr 2014 | B1 |
8693141 | Elliott et al. | Apr 2014 | B1 |
8703397 | Zeng et al. | Apr 2014 | B1 |
8705205 | Li et al. | Apr 2014 | B1 |
8705206 | Maeda | Apr 2014 | B1 |
8711518 | Zeng et al. | Apr 2014 | B1 |
8711528 | Xiao et al. | Apr 2014 | B1 |
8717709 | Shi et al. | May 2014 | B1 |
8720044 | Tran et al. | May 2014 | B1 |
8721902 | Wang et al. | May 2014 | B1 |
8724259 | Liu et al. | May 2014 | B1 |
8749790 | Tanner et al. | Jun 2014 | B1 |
8749920 | Knutson et al. | Jun 2014 | B1 |
8753903 | Tanner et al. | Jun 2014 | B1 |
8760807 | Zhang et al. | Jun 2014 | B1 |
8760818 | Diao et al. | Jun 2014 | B1 |
8760819 | Liu et al. | Jun 2014 | B1 |
8760822 | Li et al. | Jun 2014 | B1 |
8760823 | Chen et al. | Jun 2014 | B1 |
8763235 | Wang et al. | Jul 2014 | B1 |
8780498 | Jiang et al. | Jul 2014 | B1 |
8780505 | Xiao | Jul 2014 | B1 |
8786983 | Liu et al. | Jul 2014 | B1 |
8790524 | Luo et al. | Jul 2014 | B1 |
8790527 | Luo et al. | Jul 2014 | B1 |
8792208 | Liu et al. | Jul 2014 | B1 |
8792312 | Wang et al. | Jul 2014 | B1 |
8793866 | Zhang et al. | Aug 2014 | B1 |
8797680 | Luo et al. | Aug 2014 | B1 |
8797684 | Tran et al. | Aug 2014 | B1 |
8797686 | Bai et al. | Aug 2014 | B1 |
8797692 | Guo et al. | Aug 2014 | B1 |
8804283 | Meloche | Aug 2014 | B2 |
8813324 | Emley et al. | Aug 2014 | B2 |
8830625 | Linville | Sep 2014 | B2 |
8848317 | Shiimoto | Sep 2014 | B2 |
8964332 | Katada | Feb 2015 | B1 |
9153255 | Zheng et al. | Oct 2015 | B1 |
20090002896 | Mallary | Jan 2009 | A1 |
20100290157 | Zhang et al. | Nov 2010 | A1 |
20110086240 | Xiang et al. | Apr 2011 | A1 |
20110102942 | Bai | May 2011 | A1 |
20110116195 | Cazacu | May 2011 | A1 |
20110242707 | Yoon | Oct 2011 | A1 |
20110249359 | Mochizuki | Oct 2011 | A1 |
20110255196 | Wu | Oct 2011 | A1 |
20110292537 | Jin | Dec 2011 | A1 |
20120111826 | Chen et al. | May 2012 | A1 |
20120216378 | Emley et al. | Aug 2012 | A1 |
20120237878 | Zeng et al. | Sep 2012 | A1 |
20120281314 | Lopusnik | Nov 2012 | A1 |
20120298621 | Gao | Nov 2012 | A1 |
20130016443 | de la Fuente et al. | Jan 2013 | A1 |
20130216702 | Kaiser et al. | Aug 2013 | A1 |
20130216863 | Li et al. | Aug 2013 | A1 |
20130257421 | Shang et al. | Oct 2013 | A1 |
20140154529 | Yang et al. | Jun 2014 | A1 |
20140175050 | Zhang et al. | Jun 2014 | A1 |
Entry |
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Notice of Allowance dated Jun. 30, 2015 from U.S. Appl. No. 14/289,345, 9 pages. |
Notice of Allowance dated Mar. 24, 2015 from U.S. Appl. No. 14/289,345, 8 pages. |
Ex Parte Quale Action dated Feb. 11, 2015 from U.S. Appl. No. 14/289,345, 6 pages. |
Number | Date | Country | |
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20150380018 A1 | Dec 2015 | US |
Number | Date | Country | |
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61948417 | Mar 2014 | US |
Number | Date | Country | |
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Parent | 14289345 | May 2014 | US |
Child | 14847634 | US |