Magnetic writer having an asymmetric gap and shields

Information

  • Patent Grant
  • 9349393
  • Patent Number
    9,349,393
  • Date Filed
    Tuesday, September 8, 2015
    9 years ago
  • Date Issued
    Tuesday, May 24, 2016
    8 years ago
Abstract
A method and system provide a magnetic transducer. An intermediate layer including multiple sublayers is provided. A trench is formed in the intermediate layer. A main pole having a bottom, a top wider than the bottom, a first side and a second side opposite to the first side is provided in the trench. An asymmetric gap is provided along the first and second sides of the main pole. The asymmetric gap terminates closer to the top of the main pole along the first side than on the second side. The asymmetric gap has a first thickness along the first side and a second thickness different from the first thickness along the second side. An asymmetric shield is provided on the asymmetric gap. The asymmetric shield includes a half side shield having a bottom between the top and the bottom of the main pole and terminating on the asymmetric gap.
Description
BACKGROUND


FIG. 1 depicts an air-bearing surface (ABS) view of a conventional magnetic recording transducer 10. The magnetic recording transducer 10 may be a perpendicular magnetic recording (PMR) head. The conventional transducer 10 includes an underlayer 12, side gap 14, side shields 16, top gap 17, optional top, or trailing, shield 18 and main pole 20.


The main pole 20 resides on an underlayer 12 and includes sidewalls 22 and 24. The sidewalls 22 and 24 of the conventional main pole 20 form an angle with the down track direction at the ABS. The side shields 16 are separated from the main pole 20 by a side gap 14. The side shields 16 extend at least from the top of the main pole 20 to the bottom of the main pole 20. The side shields 16 also extend a distance back from the ABS. The gap 14 between the side shields 16 and the main pole 20 may have a substantially constant thickness. Thus, the side shields 16 are conformal with the main pole 20.


Although the conventional magnetic recording head 10 functions, there are drawbacks. In particular, the conventional magnetic recording head 10 may not perform sufficiently at higher recording densities. For example, at higher recording densities, a shingle recording scheme may be desired to be sued. In shingle recording, successive tracks partially overwrite previously written tracks in one direction only. Part of the overwritten tracks, such as their edges, are preserved as the recorded data. In shingle recording, the size of the main pole 20 may be increased for a given track size. However, in order to mitigate issues such as track edge curvature, shingle writers have very narrow side gaps 14. Other design requirements may also be present. The magnetic transducer 10 may not perform as desired or meet the design requirements for such recording schemes. Without such recording schemes, the conventional transducer 10 may not adequately perform at higher areal densities. Accordingly, what is needed is a system and method for improving the performance of a magnetic recording head.





BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS


FIG. 1 depicts an ABS view of a conventional magnetic recording head.



FIG. 2 depicts a flow chart of an exemplary embodiment of a method for providing a magnetic recording transducer having an asymmetric gap and asymmetric shields.



FIGS. 3A, 3B and 3C depict side, ABS and apex views of an exemplary embodiment of a magnetic recording disk drive having an asymmetric gap and asymmetric shields.



FIG. 4 depicts a flow chart of another exemplary embodiment of a method for providing an asymmetric side gap.



FIG. 5 depicts an ABS view of another exemplary embodiment of a magnetic recording transducer.



FIG. 6 depicts a flow chart of another exemplary embodiment of a method for providing a magnetic recording transducer having an asymmetric gap and asymmetric shields.



FIGS. 7 through 21 depict ABS views of an exemplary embodiment of a magnetic recording transducer fabricated using the method.





DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS


FIG. 2 depicts an exemplary embodiment of a method 100 for providing a magnetic recording transducer. For simplicity, some steps may be omitted, interleaved, combined and/or performed in another order. The method 100 is described in the context of providing a magnetic recording disk drive and transducer 200. However, the method 100 may be used to fabricate multiple magnetic recording transducers at substantially the same time. The method 100 is also described in the context of particular layers. A particular layer may include multiple materials and/or multiple sub-layers. The method 100 also may start after formation of other portions of the magnetic recording head. For example, the method 100 may start after a read transducer, return pole/shield and/or other structure have been fabricated.


An intermediate layer including at least multiple sublayers is provided, via step 102. In at least the region in which the pole tip and side shields are to be formed (shield region), the intermediate layer includes a first sublayer, a second sublayer and at least one etch stop layer between the first and second sublayers. In some embodiments, the first and second sublayers include the same material, such as aluminum oxide or silicon oxide. In other embodiments, the first and second sublayers may include different material(s). The etch stop layer is resistance to an etch (such as a wet etch) of the second sublayer. In some embodiments, for example, the etch stop layer may include silicon nitride and/or silicon oxide. The etch stop layer may also be thin. For example, the etch stop layer may be 8-12 nm thick. In some embodiments, step 102 includes full-film depositing a first layer, full film depositing an etch stop layer and full film depositing a second layer. In an embodiment, the portions of these layers outside of the side shield region and pole tip region may be removed. The first and second sublayers and etch stop layer may thus remain in the side shield region. The third sublayer may then be deposited and the layer(s) planarized. Thus, the intermediate layer may be formed.


A trench is formed in an intermediate layer using one or more etches, via step 104. The trench formed has the desired geometry and location for formation of the main pole. For example, the top of the trench may be wider than the bottom so that the top of the main pole may be wider than the bottom. The trench extends at least partially into the first sublayer in the shield region. In some embodiments, some or all of the trench may extend through the first sublayer. However, if a leading edge bevel is desired, the bottom of the trench may slope in the down track direction. In such embodiments, the portion of the trench at the ABS may not extend through the first sublayer. However, apertures that are the upper portions of the trench are generally formed in the second sublayer and etch stop layer.


The main pole is provided in the trench, via step 106. In some embodiments, step 106 includes depositing a seed layer, such as Ru and/or magnetic seed layer(s). High saturation magnetization magnetic material(s) are also provided. For example, such magnetic materials may be plated and/or vacuum deposited. The material(s) may be planarized. Further, a trailing bevel may be formed in the main pole. Formation of the trailing bevel may include covering a portion of the main pole recessed from the ABS and then ion milling the main pole at an angle from the down track direction. This step may be performed after formation of the side shields. The pole formed in step 106 may be conformal to the trench, nonconformal with the trench, or include both conformal and nonconformal portions.


An asymmetric gap is provided, via step 108. The asymmetric gap terminates at different distances from the top of the pole on the sides of the main pole. In addition, the gap may be thicker on one side of the pole than on the other side of the main pole. Formation of the gap in step 108 may include covering the pole and the intermediate layer on one side of the main pole. The second sublayer is removed on the exposed side of the main pole in the side shield region. Thus, the etch stop layer may be exposed in this region. A nonmagnetic gap layer, such as Ru is deposited after removal of the mask. Another portion of the intermediate layer on the opposite side of the main pole may be removed. A second nonmagnetic layer may be deposited in at least the side shield region. The second nonmagnetic layer may also be Ru. The first and second nonmagnetic layers may form the asymmetric gap on the first side and top of the main pole. The second nonmagnetic layer may form the asymmetric gap on the second side of the main pole. The top of the asymmetric gap extends closer to the top of the main pole on the first side than on the second side. The bottom of the asymmetric gap may be on the etch stop layer on both sides of the main pole. The asymmetric gap is also thicker on the first side than on the second side.


The asymmetric shield(s) are provided in the shield region, via step 110. Step 110 may include plating or otherwise providing the material(s) for the side shields. Because the gap is asymmetric, the bottom of the side shields extend different distances along the sides of the main pole on the first side than on the second side. The asymmetric shield terminates on top of the asymmetric gap. Thus, the asymmetric side shield extends closer to the bottom of the main pole on the second side than on the first side. In some embodiments, the asymmetric shield terminates between the top and bottom of the main pole on both sides of the pole. Thus, the asymmetric shield(s) may be termed asymmetric half side shields. Note, however, that the asymmetric shields need not extend precisely halfway down between the top and bottom of the main pole on either side of the main pole. Instead, the asymmetric side shields may terminate somewhere between the top and bottom of the main pole. In some embodiments, the asymmetric shield may be configured such that the asymmetric shield terminates at or above the top of the main pole on the first side.


Using the method 100, a magnetic transducer having improved performance may be fabricated. A shingle writer may not need to have side shield(s) which extend to the bottom of the main pole. Thus, the method 100 may provide a main pole that may be used in shingle recording. Thus, the benefits of shingle recording may be exploited. The location of the bottom of the asymmetric shields may be set by the thicknesses of the first and second gap layers as well as the location of the etch stop layer. Thus, the side shield geometry may be tailored.



FIGS. 3A, 3B and 3C depict various views of a transducer 200 fabricated using the method 100. FIG. 3A depicts a side view of the disk drive. FIGS. 3B and 3C depict ABS and apex (side/cross-sectional) views of the transducer 200. For clarity, FIGS. 3A-3C are not to scale. For simplicity not all portions of the disk drive and transducer 200 are shown. In addition, although the disk drive and transducer 200 are depicted in the context of particular components other and/or different components may be used. For example, circuitry used to drive and control various portions of the disk drive is not shown. For simplicity, only single components are shown. However, multiples of each components and/or their sub-components, might be used. The disk drive 200 may be a perpendicular magnetic recording (PMR) disk drive. However, in other embodiments, the disk drive 200 may be configured for other types of magnetic recording included but not limited to heat assisted magnetic recording (HAMR).


The disk drive includes a media 202, and a slider 204 on which a transducer 200 have been fabricated. Although not shown, the slider 204 and thus the transducer 200 are generally attached to a suspension. In general, the slider 204 includes the write transducer 200 and a read transducer (not shown). However, for clarity, only the write transducer 200 is shown.


The transducer 200 includes an underlayer 206, an intermediate layer 208, a main pole 210, coil(s) 220, asymmetric gap 230 and asymmetric shields 240. The underlayer 206 may include a bottom (or leading edge) shield. The coil(s) 220 are used to energize the main pole 210. Two turns are depicted in FIG. 3A. Another number of turns may, however, be used. Note that only a portion of the coil(s) 210 may be shown in FIG. 3A. If, for example, the coil(s) 220 is a spiral, or pancake, coil, then additional portions of the coil(s) 220 may be located further from the ABS. Further, additional coils may also be used.


The intermediate layer 208 may include one or more sublayers as well as an etch stop layer. However, one or more of the sublayers may have been removed for formation of the asymmetric gap 230 and asymmetric shields 240. Further, the intermediate layer may also include different layers in regions recessed from the ABS.


The main pole 210 is shown as having a top wider than the bottom. The main pole 210 thus includes sidewalls having sidewall angles that are greater than or equal to zero. In an embodiment, these sidewall angles differ at different distances from the ABS. In some embodiments, the sidewall angles at the ABS are at least three degrees and not more than fifteen degrees. In other embodiments, other geometries may be used. For example, the top may be the same size as or smaller than the bottom. The sidewall angles may vary in another manner including, but not limited to, remaining substantially constant. The main pole 210 may be being conformal with the trench in the intermediate layer 208. In other embodiments, however, at least a portion of the main pole 210 may not be conformal with the sides of the trench. In some embodiments, the main pole 210 may have leading surface bevel 212 and/or a trailing surface bevel 214, as shown in FIG. 3C.


As can be seen in FIG. 3B, the gap 230 is asymmetric. Thus, the gap on one side of the pole 210 is larger than the part of the gap on the other side of the main pole 210. In addition, one side of the gap 230 terminates further from the bottom of the main pole 210 than the other.


The asymmetric shields 240 are shown as including a trailing shield portion and half side shield portions. In other embodiments, the trailing shield portion may be omitted. This is denoted by a dotted line in FIG. 3B. Further, because the asymmetric shields 240 extend different distances along the sidewalls of the main pole 210, the dashed lines in FIG. 3C indicate the side portions of the asymmetric shields 240 on opposite sides of the pole. The asymmetric shields 240 are also shown as having a constant thickness in FIG. 3C. Stated differently, the bottoms of the asymmetric shields 240 are substantially perpendicular to the ABS. Thus, the dashed line corresponding to the bottoms of the asymmetric shields 240 are perpendicular to the ABS. In other embodiments, the geometry of the asymmetric shields 240 may vary. For example, the bottom of the asymmetric shields 240 track the trailing edge of the pole such that the shield covers less of the pole further from the ABS. In other embodiments, the asymmetric shield thickness may vary. In such embodiments, the bottom of the half shield portion of the shield 240 may be parallel to the leading bevel 212 or the trailing bevel 214 while the top surface is perpendicular to the ABS. Other variations are also possible. However, note that bottoms of the asymmetric shields reside on the top of the intermediate layer 208 is between the top and bottom of the pole 210.


The magnetic transducer 200 in the disk drive may be used in shingle recording. Thus, the benefits of shingle recording may be achieved. For example, higher areal density recording may be performed by a head having larger critical dimensions.



FIG. 4 depicts an exemplary embodiment of a method 120 for providing an asymmetric gap for a magnetic recording transducer. For simplicity, some steps may be omitted, interleaved, performed in another order and/or combined. The method 120 may be used to fabricate multiple magnetic recording heads at substantially the same time. The method 120 may also be used to fabricate other magnetic recording transducers. The method 120 is also described in the context of particular layers. A particular layer may include multiple materials and/or multiple sub-layers. The method 120 also may start after formation of other portions of the magnetic recording transducer. For example, the method 120 may start after at least a portion of the pole has been fabricated.


A portion of the intermediate layer adjacent to one side of the pole is removed, via step 122. In some embodiments, step 122 includes providing a mask that covers the pole and another portion of the intermediate layer along the second, opposite side of the pole. The portion of the intermediate layer may be removed via a wet etch or, in some embodiments, another process such as an RIE. The etch terminates at the etch stop layer. Thus, the second sublayer along the first side of the pole may be removed. The mask may then be removed.


A first nonmagnetic layer is then provided, via step 124. Step 124 may include depositing a Ru layer, for example via chemical vapor deposition, sputtering or another method. In some embodiments, the first nonmagnetic layer extends across the top of the pole. In other embodiments, the first nonmagnetic layer is only on the first side of the pole. For example, the layer may be provided before removal or the mask or the portion of the layer on the top of the pole may be removed. A portion of the first nonmagnetic layer may also reside on the etch stop layer. In some embodiments, step 124 may include refilling the region adjacent to the first side of the main pole with a nonmagnetic material, such as aluminum oxide. Such a refill step may be used to provide a more flat topography for subsequent steps.


A portion of the intermediate layer adjacent to the second side of the main pole is removed, via step 126. Step 126 may be performed in an analogous manner to step 122. Thus, the etch stop layer may be exposed along the second side of the main pole. In some embodiments, the top of the first nonmagnetic layer is exposed along the first side of the main pole.


A second nonmagnetic layer is provided, via step 128. Step 128 may be analogous to step 124. For example, a Ru layer may be deposited. In some embodiments, the first and second nonmagnetic layers have different thicknesses. For example, the first nonmagnetic layer may be thicker than the second nonmagnetic layer. In other embodiments, the thicknesses may be the same. Fabrication of the magnetic transducer may then be completed.



FIG. 5 depicts an ABS view of a transducer 200′ having an asymmetric gap fabricated using the method 120. For clarity, FIG. 5 is not to scale. For simplicity not all portions of the transducer 200′ are shown. Although the transducer 200′ is depicted in the context of particular components, other and/or different components may be used. For example, circuitry used to drive and control various portions of the transducer is not shown. For simplicity, only single components are shown. However, multiples of each components and/or their sub-components, might be used. The transducer 200′ may be a PMR transducer. However, in other embodiments, the transducer 200′ may be configured for other types of magnetic recording included but not limited to HAMR.


The transducer 200′ is analogous to the transducer 200 and disk drive depicted in FIGS. 3A-3C. Consequently, analogous components have similar labels. For example, the transducer 200′ includes an underlayer 206, intermediate layer 208, pole 210′, gap 230′ and shield 240′ analogous to the underlayer 206, intermediate layer 208, pole 210, gap 230 and shield 240 of FIGS. 3A-3D.


As can be seen in FIG. 5, the asymmetric gap 230′ includes two nonmagnetic layers 232 and 234. The magnetic layer 232 is only on the first (right) side of the main pole 210′. The second nonmagnetic layer 234 covers both sides and the top of the main pole 210′. Thus, the first nonmagnetic layer 232 may be provided in step 124, while the second nonmagnetic layer 234 may be provided in step 128. In other embodiments, the first nonmagnetic layer may cover the top and both sides of the main pole 210 while the second nonmagnetic layer 234 may cover only one side of the main pole. In addition, the second nonmagnetic layer 234 that also forms the top, write gap is depicted as thinner than the first nonmagnetic layer 232. However, in other embodiments, the relationship between the thicknesses of the layers 232 and 234 may be different. The shield 240′ is also asymmetric. The portion of the shield 240′ on the first side of the main pole 210′ terminates closer to the top and is further from the main pole 210′.


The magnetic transducer 200′ in the disk drive may be used in shingle recording. Thus, the benefits of shingle recording may be achieved. For example, higher areal density recording may be performed by a head having larger critical dimensions.



FIG. 6 depicts an exemplary embodiment of a method 150 for providing a pole for a magnetic recording transducer having asymmetric side gap and shield. For simplicity, some steps may be omitted, interleaved, performed in another order and/or combined. The method 150 is also described in the context of providing a magnetic recording transducer 250 depicted in FIGS. 7-21 depict ABS views of an exemplary embodiment of a transducer 250 during fabrication using the method 150. The method 150 may be used to fabricate multiple magnetic recording heads at substantially the same time. The method 150 may also be used to fabricate other magnetic recording transducers. The method 150 is also described in the context of particular layers. A particular layer may include multiple materials and/or multiple sub-layers. The method 150 also may start after formation of other portions of the magnetic recording transducer. For example, the method 150 may start after a read transducer, return pole/shield and/or other structure have been fabricated.


The material(s) for the first sublayer are full-film deposited, via step 152. In some embodiments, step 152 includes full-film depositing aluminum oxide. The materials for the etch stop layer are provided, via step 154. Step 154 may include full-film depositing silicon dioxide or another material that is resistant to an aluminum oxide wet etch. The material(s) for the second sublayer are provided, via step 156. Step 156 may include full-film depositing aluminum oxide on the silicon oxide layer. In addition, steps 152, 154, and 156 may be carried out so that the structure including two sublayers separated by the etch stop layer are only in the shield region. FIG. 7 depicts an ABS view of the transducer 250 after step 156 has been performed. Thus, the first sublayer 262 has been provided on the underlayer 252. The etch stop layer 264 has been deposited on the first sublayer 262. The second sublayer 266 has been provided on the etch stop layer 264. Thus, the first sublayer 262 and second sublayer 266 may be aluminum oxide while the etch stop layer 264 may be silicon oxide. Other materials may be used, but the first and second sublayers are generally desired to be removable using the same etch. The etch stop layer 264 is desired to be resistant to at least some etches of the layer 262 and 266, but removable using other etches that are the same as for the layers 262 and 266. For example, a particular wet etch that would remove the first sublayer 262 and the second sublayer 266 would not remove the etch stop layer 254. However, other etches, such as a chlorine based or fluorine based RIE may remove layers 262, 264 and 266. The layers 262, 264 and 266 form at least part of the intermediate layer 260. The total thickness of the intermediate layer 260 may be at least that desired for the main pole. The etch stop layer 264 is desired to be thin, for example eight to twelve nanometers. In some embodiments, the etch stop layer 264 is nominally ten nanometers thick. The thicknesses of the layers 262, 264 and 266 may be designed such that the asymmetric gap resides on the top of the etch stop layer 264 at the desired height. Also shown is underlayer 252. The underlayer 252 may include two sublayers. A portion of the underlayer 252 at and near the ABS may be a NiFe layer used as a leading shield, while a portion of the underlayer recessed from the ABS may be a Ru layer. However, in other embodiments, other configurations, including other material(s) may be used.


A trench is formed in the intermediate layer, via step 158. Step 158 may include multiple substeps. For example, a mask including an aperture that corresponds to a trench may be provided on the intermediate layer 260. This may be accomplished using a photoresist line mask. For example, first and second hard mask layers, such as Ta and Ru, may be full film deposited. The Ta mask layer and the Ru mask layer may each be nominally fifty nanometers thick. A photoresist mask having a line corresponding to the region of the pole near the ABS is then fabricated on the first and second hard mask layers. A third hard mask layer, such as Ta, may be provided on the first and second hard mask layers and the photoresist mask. This hard mask layer may be a Ta layer that is nominally twenty nanometer thick. The photoresist mask is then removed. The location of the photoresist mask forms the location of the aperture in the hard mask layers. The photoresist mask removal may be carried out by side milling the photoresist mask to remove the third hard mask layer, then performing a lift off. A trench is formed in region of the intermediate layer 260 that is exposed by the aperture in the hard mask layers. Step 166 may include performing an aluminum oxide RIE (or other RIE(s) appropriate for the layers 262, 264 and 266). This RIE may remove the hard mask layers under the aperture in the third hard mask layer or these hard mask layers may be removed in another manner. In some embodiments, multiple RIEs are used to obtain the desired trench profile for various regions of the transducer 250. For example, fluorine-based and/or chlorine-based RIE(s) may be performed. FIG. 8 depicts an ABS view of the transducer 250 after step 158 has been performed. Thus, a trench 277 has been formed in layers 262′, 264′ and 266′ (in intermediate layer 260′). In the embodiment shown, the bottom of the trench 277 does not reach the underlayer 252 at the ABS. Thus, apertures are formed in layers 264′ and 266′, but a groove formed in at least part of the layer 262′. However, the trench 277 may be deeper at other regions, such as in the yoke region. Thus, the pole being formed may have a leading edge bevel. In addition, the trench 277 has a triangular profile at the ABS. In other embodiments, the bottom of the trench 277 has a flat surface and, therefore, a trapezoidal shape at the ABS. The trench 277 resides below an aperture in the mask 270. The mask 270 includes layers 272 and 274. In the embodiment shown, a third hard mask layer may have been removed during formation of the trench 277. In other embodiments, other masks 270 may be used.


Seed layer(s) that are resistant to an etch of the intermediate layer 260 is deposited in the trench, via step 160. In some embodiments, this seed layer may serve as at least part of the gap. The seed layer may include material(s) such as Ru deposited using methods such as chemical vapor deposition. In other embodiments, a magnetic seed layer may be used in lieu of or in addition to a nonmagnetic seed layer.


The material(s) for the main pole may then be provided, via step 162. Step 162 includes depositing high saturation magnetization magnetic material(s), for example via electroplating. In some embodiments, the pole materials provided in step 162 fills the trench 277. However, in other embodiments, the pole may occupy only a portion of the trench. FIG. 9 depicts an ABS view of the transducer 250 after a step 162 has been performed. Thus, the seed layer 279 and pole materials 280 have been provided. A leading bevel may be naturally formed in the magnetic pole to the shape of the trench 277 and the deposition techniques used.


A planarization, such as a chemical mechanical planarization (CMP) may also be performed, via step 164. In some embodiments, a trailing edge (top) bevel may be formed at this time. In other embodiments, however, the trailing bevel may be formed layer. A mill may also be used to remove the mask 270. FIG. 10 depicts an ABS view of the transducer 250 after step 164 has been completed. Thus, the portion of the main pole materials outside of the trench has been removed, forming main pole 280.


A portion of the intermediate layer 260 adjacent to the first side of the main pole 280 may be removed, via step 166. In particular, a portion of the second sublayer adjacent to the first side of the main pole 280 may be removed in at least the region in which the shields are to be formed. Step 166 includes providing a mask that covers the main pole 280 and the second sublayer on the second side of the main pole 280. In some embodiments, the removal of the second sublayer may be performed using a wet etch, such as an aluminum oxide wet etch. After the etch, the mask may be removed. FIG. 11 depicts the transducer 250 during step 166. Thus, the photoresist mask 282 and hard mask 281 are shown covering the main pole 280 and portion of the second sublayer 266″ on the opposite side of the main pole 280. The second sublayer has been removed from the first side of the main pole 280. Thus, the remaining intermediate layer 260″ includes the first sublayer 262′, the etch stop layer 264′ and the second sublayer 266″. The seed layer 279, etch stop layer 264′ and masks 281 and 282 are barriers against the etch used in step 166. FIG. 12 depicts the transducer after step 166 has been performed. Thus, the masks 281 and 282 have been removed.


A first nonmagnetic layer for the asymmetric gap is provided, via step 168. Step 168 includes depositing a Ru layer, for example via chemical vapor deposition. FIG. 13 depicts and ABS view of the transducer after step 168 has been performed. Thus, nonmagnetic layer 292 is shown. Thus, on the first side of the main pole 280, the gap would be formed by at least the seed layer 279 and the nonmagnetic layer 292.


The region above the portion of the first nonmagnetic layer 292 that is lower than the top of the pole 280 is desired to be refilled. Thus, a sacrificial layer is provided, via step 170. Step 170 may include depositing an aluminum oxide layer and then planarizing the layer. FIG. 14 depicts an ABS view of the transducer 250 after the deposition of sacrificial layer 293. Step 170 may be completed by the planarization, which exposes the top of the first nonmagnetic layer 292 on top of the main pole 280. FIG. 15 depicts an ABS view of the transducer 250 after step 170 is completed. Thus, the portion of the sacrificial layer 293′ on the first side of the main pole remains.


A trailing bevel may optionally be provided in step 172. Step 172 may include removing the portion of the first nonmagnetic layer 292 on top of the main pole 280, for example via an ion mill. A mask the covers part of the main pole 280 recessed from the ABS but leaves the portion of the main pole near the ABS uncovered may then be formed. For example, a Ru layer may be full film deposited, then patterned using a photoresist mask that is recessed from the ABS. An ion mill may then be performed. Because of shadowing due to the masks, the top of the main pole 280 may be removed such that the top of the main pole 280 is at a nonzero angle from a direction perpendicular to the ABS. Other methods could also be used to form the trailing bevel. FIG. 16 depicts an ABS view of the transducer 250 after step 172 has been completed. Thus, a portion of the first nonmagnetic layer 292′, refill 293″ and second sublayer 266″ remains. In addition, the pole 280 is shorter at the ABS than previously.


The portion of the second sublayer 266″ that is adjacent to the second side of the main pole 280 is removed in at least the region in which the shields are to be formed, via step 174. Also in step 174, the refill 293′ may be removed in at least the region in which the shields are to be formed. Step 174 may include multiple substeps. For example, a mask that covers the main pole 280 but uncovers portions of the intermediate layer 260′ and refill 293′ is provided. FIG. 17 depicts an ABS view of the transducer 250 after the mask has been provided. Thus, a nonmagnetic layer 294 and a resist mask 295 are shown. An etch that removes the desired portions of layers 266″ and 293′ is performed. For example, an aluminum oxide wet etch may be used. In other embodiments multiple etches may be performed to remove the desired portions of layers 266″ and 293′. FIG. 18 depicts an ABS view of the transducer 250 after this wet etch has been carried out. Thus, the top of the etch stop layer 264′ is exposed on the second side of the main pole 280, while the top of the first nonmagnetic layer 292′ is exposed on the first side of the main pole 280. The mask layers 294 and 295 may then be removed. FIG. 19 depicts an ABS view of the transducer 250 after step 174 is completed. Thus, the portions of layers 264′ (on the second side of the main pole 280), 292′ (on the first side of the main pole) and 279 (at the edges of the main pole 280) as well as the main pole 280 are exposed.


A second nonmagnetic layer that is to form part of the asymmetric gap is deposited, via step 176. Step 176 may include depositing a nonmagnetic layer using chemical vapor deposition, sputtering, plating or another method. FIG. 20 depicts an ABS view of the transducer 250 after step 176 is carried out. Thus, a nonmagnetic layer 296 is deposited. The nonmagnetic layer 296 may also form all or part of the write gap as it resides on the trailing surface of the main pole 280. The asymmetric gap 298 may be considered to be formed by layers 292′, 296 and 279.


The asymmetric shield(s) may be provided, via step 178. Step 178 may include depositing a seed layer as well as the material(s) for the shields. For example, a seed layer may be deposited, followed by electroplating of a magnetic material such as NiFe. In some embodiments, the asymmetric shields are part of a wraparound shield. Thus, step 178 may also include providing a wraparound shield. If the layer 296 is not to form the write gap, then a write gap layer may also be provided. FIG. 21 depicts an ABS view of the transducer 250 after step 178 has been performed. Thus, the asymmetric shield 300 is shown. As can be seen in FIG. 21, the shield 300 terminates closer to the trailing surface of the main pole 280 on the first side than on the second side of the main pole 280. This is because of the presence of the asymmetric gap 298. The asymmetric shield 300 also includes a trailing shield portion above the top/trailing surface of the main pole 280. Thus, the asymmetric shield 300 may be considered a wraparound shield. In other embodiments, the trailing portion of the shield 300 might be removed.


Using the method 150, the transducer 250 including shield 300 may be provided. Thus, the benefits of shingle recording may be achieved. For example, higher areal density recording may be performed by a head having larger critical dimensions.

Claims
  • 1. A magnetic transducer having an air-bearing surface (ABS) comprising: an intermediate layer having a trench therein;a main pole, a portion of the main pole residing in the trench, the main pole having a bottom, a top wider than the bottom, a first side and a second side opposite to the first side;an asymmetric gap having a first portion of the asymmetric gap along the first side of the main pole, a second portion of the asymmetric gap along the second side of the main pole, and a third portion of the asymmetric gap along the top of the main pole, the asymmetric gap terminating between the top and the bottom of the main pole, the first portion of the asymmetric gap terminating closer to the top of the main pole than the second portion of the asymmetric gap, the first portion of the asymmetric gap having a first thickness, the second portion of the asymmetric gap having a second thickness, the second thickness being different from the first thickness; andan asymmetric shield on the asymmetric gap, the asymmetric shield including a half side shield, a bottom of the half side shield being between the top and the bottom of the main pole and terminating on the asymmetric gap.
  • 2. The magnetic recording transducer of claim 1 further comprising: a leading shield.
  • 3. The magnetic recording transducer of claim 1 wherein the second thickness is less than the first thickness.
  • 4. The magnetic recording transducer of claim 1 wherein the intermediate layer further includes: an etch stop layer, a first portion of the etch stop layer residing under the first portion of the asymmetric gap, a second portion of the etch stop layer residing under the second portion of the asymmetric gap.
  • 5. The magnetic recording transducer of claim 1 wherein the asymmetric gap further includes a third portion and a fourth portion, the third portion adjoining the first portion and extending in a cross track direction, the fourth portion adjoining the second portion and extending in the cross track direction.
  • 6. The magnetic recording transducer of claim 5 wherein the asymmetric shield includes a trailing shield, the trailing shield is magnetically coupled with the half side shield such that the trailing shield and the half side shield form a wraparound shield.
CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of U.S. application Ser. No. 14/289,345, filed May 28, 2014, entitled “METHOD FOR FABRICATING A MAGNETIC WRITER HAVING AN ASYMMETRIC GAP AND SHIELDS” now U.S. Pat No. 9,153,255 B1 issued on Oct. 6, 2015, which claims priority to provisional U.S. Patent Application Ser. No. 61/948,417, filed on Mar. 5, 2014, which is hereby incorporated by reference in its entirety.

US Referenced Citations (623)
Number Name Date Kind
6016290 Chen et al. Jan 2000 A
6018441 Wu et al. Jan 2000 A
6025978 Hoshi et al. Feb 2000 A
6025988 Yan Feb 2000 A
6032353 Hiner et al. Mar 2000 A
6033532 Minami Mar 2000 A
6034851 Zarouri et al. Mar 2000 A
6043959 Crue et al. Mar 2000 A
6046885 Aimonetti et al. Apr 2000 A
6049650 Jerman et al. Apr 2000 A
6055138 Shi Apr 2000 A
6058094 Davis et al. May 2000 A
6073338 Liu et al. Jun 2000 A
6078479 Nepela et al. Jun 2000 A
6081499 Berger et al. Jun 2000 A
6094803 Carlson et al. Aug 2000 A
6099362 Viches et al. Aug 2000 A
6103073 Thayamballi Aug 2000 A
6108166 Lederman Aug 2000 A
6118629 Huai et al. Sep 2000 A
6118638 Knapp et al. Sep 2000 A
6125018 Takagishi et al. Sep 2000 A
6130779 Carlson et al. Oct 2000 A
6134089 Barr et al. Oct 2000 A
6136166 Shen et al. Oct 2000 A
6137661 Shi et al. Oct 2000 A
6137662 Huai et al. Oct 2000 A
6160684 Heist et al. Dec 2000 A
6163426 Nepela et al. Dec 2000 A
6166891 Lederman et al. Dec 2000 A
6173486 Hsiao et al. Jan 2001 B1
6175476 Huai et al. Jan 2001 B1
6178066 Barr Jan 2001 B1
6178070 Hong et al. Jan 2001 B1
6178150 Davis Jan 2001 B1
6181485 He Jan 2001 B1
6181525 Carlson Jan 2001 B1
6185051 Chen et al. Feb 2001 B1
6185077 Tong et al. Feb 2001 B1
6185081 Simion et al. Feb 2001 B1
6188549 Wiitala Feb 2001 B1
6190764 Shi et al. Feb 2001 B1
6193584 Rudy et al. Feb 2001 B1
6195229 Shen et al. Feb 2001 B1
6198608 Hong et al. Mar 2001 B1
6198609 Barr et al. Mar 2001 B1
6201673 Rottmayer et al. Mar 2001 B1
6204998 Katz Mar 2001 B1
6204999 Crue et al. Mar 2001 B1
6212153 Chen et al. Apr 2001 B1
6215625 Carlson Apr 2001 B1
6219205 Yuan et al. Apr 2001 B1
6221218 Shi et al. Apr 2001 B1
6222707 Huai et al. Apr 2001 B1
6229782 Wang et al. May 2001 B1
6230959 Heist et al. May 2001 B1
6233116 Chen et al. May 2001 B1
6233125 Knapp et al. May 2001 B1
6237215 Hunsaker et al. May 2001 B1
6252743 Bozorgi Jun 2001 B1
6255721 Roberts Jul 2001 B1
6258468 Mahvan et al. Jul 2001 B1
6266216 Hikami et al. Jul 2001 B1
6271604 Frank, Jr. et al. Aug 2001 B1
6275354 Huai et al. Aug 2001 B1
6277505 Shi et al. Aug 2001 B1
6282056 Feng et al. Aug 2001 B1
6296955 Hossain et al. Oct 2001 B1
6297955 Frank, Jr. et al. Oct 2001 B1
6304414 Crue, Jr. et al. Oct 2001 B1
6307715 Berding et al. Oct 2001 B1
6310746 Hawwa et al. Oct 2001 B1
6310750 Hawwa et al. Oct 2001 B1
6317290 Wang et al. Nov 2001 B1
6317297 Tong et al. Nov 2001 B1
6322911 Fukagawa et al. Nov 2001 B1
6330136 Wang et al. Dec 2001 B1
6330137 Knapp et al. Dec 2001 B1
6333830 Rose et al. Dec 2001 B2
6340533 Ueno et al. Jan 2002 B1
6349014 Crue, Jr. et al. Feb 2002 B1
6351355 Min et al. Feb 2002 B1
6353318 Sin et al. Mar 2002 B1
6353511 Shi et al. Mar 2002 B1
6356412 Levi et al. Mar 2002 B1
6359779 Frank, Jr. et al. Mar 2002 B1
6369983 Hong Apr 2002 B1
6376964 Young et al. Apr 2002 B1
6377535 Chen et al. Apr 2002 B1
6381095 Sin et al. Apr 2002 B1
6381105 Huai et al. Apr 2002 B1
6389499 Frank, Jr. et al. May 2002 B1
6392850 Tong et al. May 2002 B1
6396660 Jensen et al. May 2002 B1
6399179 Hanrahan et al. Jun 2002 B1
6400526 Crue, Jr. et al. Jun 2002 B2
6404600 Hawwa et al. Jun 2002 B1
6404601 Rottmayer et al. Jun 2002 B1
6404706 Stovall et al. Jun 2002 B1
6410170 Chen et al. Jun 2002 B1
6411522 Frank, Jr. et al. Jun 2002 B1
6417998 Crue, Jr. et al. Jul 2002 B1
6417999 Knapp et al. Jul 2002 B1
6418000 Gibbons et al. Jul 2002 B1
6418048 Sin et al. Jul 2002 B1
6421211 Hawwa et al. Jul 2002 B1
6421212 Gibbons et al. Jul 2002 B1
6424505 Lam et al. Jul 2002 B1
6424507 Lederman et al. Jul 2002 B1
6430009 Komaki et al. Aug 2002 B1
6430806 Chen et al. Aug 2002 B1
6433965 Gopinathan et al. Aug 2002 B1
6433968 Shi et al. Aug 2002 B1
6433970 Knapp et al. Aug 2002 B1
6437945 Hawwa et al. Aug 2002 B1
6445536 Rudy et al. Sep 2002 B1
6445542 Levi et al. Sep 2002 B1
6445553 Barr et al. Sep 2002 B2
6445554 Dong et al. Sep 2002 B1
6447935 Zhang et al. Sep 2002 B1
6448765 Chen et al. Sep 2002 B1
6451514 Iitsuka Sep 2002 B1
6452742 Crue et al. Sep 2002 B1
6452765 Mahvan et al. Sep 2002 B1
6456465 Louis et al. Sep 2002 B1
6459552 Liu et al. Oct 2002 B1
6462920 Karimi Oct 2002 B1
6466401 Hong et al. Oct 2002 B1
6466402 Crue, Jr. et al. Oct 2002 B1
6466404 Crue, Jr. et al. Oct 2002 B1
6468436 Shi et al. Oct 2002 B1
6469877 Knapp et al. Oct 2002 B1
6477019 Matono et al. Nov 2002 B2
6479096 Shi et al. Nov 2002 B1
6483662 Thomas et al. Nov 2002 B1
6487040 Hsiao et al. Nov 2002 B1
6487056 Gibbons et al. Nov 2002 B1
6490125 Barr Dec 2002 B1
6496330 Crue, Jr. et al. Dec 2002 B1
6496334 Pang et al. Dec 2002 B1
6504676 Hiner et al. Jan 2003 B1
6512657 Heist et al. Jan 2003 B2
6512659 Hawwa et al. Jan 2003 B1
6512661 Louis Jan 2003 B1
6512690 Qi et al. Jan 2003 B1
6515573 Dong et al. Feb 2003 B1
6515791 Hawwa et al. Feb 2003 B1
6532823 Knapp et al. Mar 2003 B1
6535363 Hosomi et al. Mar 2003 B1
6552874 Chen et al. Apr 2003 B1
6552928 Qi et al. Apr 2003 B1
6577470 Rumpler Jun 2003 B1
6583961 Levi et al. Jun 2003 B2
6583968 Scura et al. Jun 2003 B1
6597548 Yamanaka et al. Jul 2003 B1
6611398 Rumpler et al. Aug 2003 B1
6618223 Chen et al. Sep 2003 B1
6629357 Akoh Oct 2003 B1
6633464 Lai et al. Oct 2003 B2
6636394 Fukagawa et al. Oct 2003 B1
6639291 Sin et al. Oct 2003 B1
6650503 Chen et al. Nov 2003 B1
6650506 Risse Nov 2003 B1
6654195 Frank, Jr. et al. Nov 2003 B1
6657816 Barr et al. Dec 2003 B1
6661621 Iitsuka Dec 2003 B1
6661625 Sin et al. Dec 2003 B1
6674610 Thomas et al. Jan 2004 B1
6680863 Shi et al. Jan 2004 B1
6683763 Hiner et al. Jan 2004 B1
6687098 Huai Feb 2004 B1
6687178 Qi et al. Feb 2004 B1
6687977 Knapp et al. Feb 2004 B2
6691226 Frank, Jr. et al. Feb 2004 B1
6697294 Qi et al. Feb 2004 B1
6700738 Sin et al. Mar 2004 B1
6700759 Knapp et al. Mar 2004 B1
6704158 Hawwa et al. Mar 2004 B2
6707083 Hiner et al. Mar 2004 B1
6713801 Sin et al. Mar 2004 B1
6721138 Chen et al. Apr 2004 B1
6721149 Shi et al. Apr 2004 B1
6721203 Qi et al. Apr 2004 B1
6724569 Chen et al. Apr 2004 B1
6724572 Stoev et al. Apr 2004 B1
6729015 Matono et al. May 2004 B2
6735850 Gibbons et al. May 2004 B1
6737281 Dang et al. May 2004 B1
6744608 Sin et al. Jun 2004 B1
6747301 Hiner et al. Jun 2004 B1
6751055 Alfoqaha et al. Jun 2004 B1
6754049 Seagle et al. Jun 2004 B1
6756071 Shi et al. Jun 2004 B1
6757140 Hawwa Jun 2004 B1
6760196 Niu et al. Jul 2004 B1
6762910 Knapp et al. Jul 2004 B1
6765756 Hong et al. Jul 2004 B1
6775902 Huai et al. Aug 2004 B1
6778358 Jiang et al. Aug 2004 B1
6781927 Heanuc et al. Aug 2004 B1
6785955 Chen et al. Sep 2004 B1
6791793 Chen et al. Sep 2004 B1
6791807 Hikami et al. Sep 2004 B1
6798616 Seagle et al. Sep 2004 B1
6798625 Ueno et al. Sep 2004 B1
6801408 Chen et al. Oct 2004 B1
6801411 Lederman et al. Oct 2004 B1
6803615 Sin et al. Oct 2004 B1
6806035 Atireklapvarodom et al. Oct 2004 B1
6807030 Hawwa et al. Oct 2004 B1
6807332 Hawwa Oct 2004 B1
6809899 Chen et al. Oct 2004 B1
6816345 Knapp et al. Nov 2004 B1
6828897 Nepela Dec 2004 B1
6829160 Qi et al. Dec 2004 B1
6829819 Crue, Jr. et al. Dec 2004 B1
6833979 Knapp et al. Dec 2004 B1
6834010 Qi et al. Dec 2004 B1
6859343 Alfoqaha et al. Feb 2005 B1
6859997 Tong et al. Mar 2005 B1
6861937 Feng et al. Mar 2005 B1
6870712 Chen et al. Mar 2005 B2
6873494 Chen et al. Mar 2005 B2
6873547 Shi et al. Mar 2005 B1
6879464 Sun et al. Apr 2005 B2
6888184 Shi et al. May 2005 B1
6888704 Diao et al. May 2005 B1
6891702 Tang May 2005 B1
6894871 Alfoqaha et al. May 2005 B2
6894877 Crue, Jr. et al. May 2005 B1
6906894 Chen et al. Jun 2005 B2
6909578 Missell et al. Jun 2005 B1
6912106 Chen et al. Jun 2005 B1
6934113 Chen Aug 2005 B1
6934129 Zhang et al. Aug 2005 B1
6940688 Jiang et al. Sep 2005 B2
6942824 Li Sep 2005 B1
6943993 Chang et al. Sep 2005 B2
6944938 Crue, Jr. et al. Sep 2005 B1
6947258 Li Sep 2005 B1
6950266 McCaslin et al. Sep 2005 B1
6954332 Hong et al. Oct 2005 B1
6958885 Chen et al. Oct 2005 B1
6961221 Niu et al. Nov 2005 B1
6969989 Mei Nov 2005 B1
6975486 Chen et al. Dec 2005 B2
6987643 Seagle Jan 2006 B1
6989962 Dong et al. Jan 2006 B1
6989972 Stoev et al. Jan 2006 B1
7006327 Krounbi et al. Feb 2006 B2
7007372 Chen et al. Mar 2006 B1
7012832 Sin et al. Mar 2006 B1
7023658 Knapp et al. Apr 2006 B1
7026063 Ueno et al. Apr 2006 B2
7027268 Zhu et al. Apr 2006 B1
7027274 Sin et al. Apr 2006 B1
7035046 Young et al. Apr 2006 B1
7041985 Wang et al. May 2006 B1
7046490 Ueno et al. May 2006 B1
7054113 Seagle et al. May 2006 B1
7057857 Niu et al. Jun 2006 B1
7059868 Yan Jun 2006 B1
7092195 Liu et al. Aug 2006 B1
7110289 Sin et al. Sep 2006 B1
7111382 Knapp et al. Sep 2006 B1
7113366 Wang et al. Sep 2006 B1
7114241 Kubota et al. Oct 2006 B2
7116517 He et al. Oct 2006 B1
7124654 Davies et al. Oct 2006 B1
7126788 Liu et al. Oct 2006 B1
7126790 Liu et al. Oct 2006 B1
7131346 Buttar et al. Nov 2006 B1
7133253 Seagle et al. Nov 2006 B1
7134185 Knapp et al. Nov 2006 B1
7154715 Yamanaka et al. Dec 2006 B2
7170725 Zhou et al. Jan 2007 B1
7177117 Jiang et al. Feb 2007 B1
7193815 Stoev et al. Mar 2007 B1
7196880 Anderson et al. Mar 2007 B1
7199974 Alfoqaha Apr 2007 B1
7199975 Pan Apr 2007 B1
7211339 Seagle et al. May 2007 B1
7212384 Stoev et al. May 2007 B1
7238292 He et al. Jul 2007 B1
7239478 Sin et al. Jul 2007 B1
7248431 Liu et al. Jul 2007 B1
7248433 Stoev et al. Jul 2007 B1
7248449 Seagle Jul 2007 B1
7268971 Samoto Sep 2007 B2
7280325 Pan Oct 2007 B1
7283327 Liu et al. Oct 2007 B1
7284316 Huai et al. Oct 2007 B1
7286329 Chen et al. Oct 2007 B1
7289303 Sin et al. Oct 2007 B1
7292409 Stoev et al. Nov 2007 B1
7296339 Yang et al. Nov 2007 B1
7307814 Seagle et al. Dec 2007 B1
7307818 Park et al. Dec 2007 B1
7310204 Stoev et al. Dec 2007 B1
7318947 Park et al. Jan 2008 B1
7333295 Medina et al. Feb 2008 B1
7337530 Stoev et al. Mar 2008 B1
7342752 Zhang et al. Mar 2008 B1
7349170 Rudman et al. Mar 2008 B1
7349179 He et al. Mar 2008 B1
7354664 Jiang et al. Apr 2008 B1
7363697 Dunn et al. Apr 2008 B1
7371152 Newman May 2008 B1
7372665 Stoev et al. May 2008 B1
7375926 Stoev et al. May 2008 B1
7379269 Krounbi et al. May 2008 B1
7386933 Krounbi et al. Jun 2008 B1
7389577 Shang et al. Jun 2008 B1
7417832 Erickson et al. Aug 2008 B1
7419891 Chen et al. Sep 2008 B1
7428124 Song et al. Sep 2008 B1
7430098 Song et al. Sep 2008 B1
7436620 Kang et al. Oct 2008 B1
7436638 Pan Oct 2008 B1
7440220 Kang et al. Oct 2008 B1
7443632 Stoev et al. Oct 2008 B1
7444740 Chung et al. Nov 2008 B1
7493688 Wang et al. Feb 2009 B1
7508627 Zhang et al. Mar 2009 B1
7522377 Jiang et al. Apr 2009 B1
7522379 Krounbi et al. Apr 2009 B1
7522382 Pan Apr 2009 B1
7542246 Song et al. Jun 2009 B1
7551406 Thomas et al. Jun 2009 B1
7552523 He et al. Jun 2009 B1
7554767 Hu et al. Jun 2009 B1
7583466 Kermiche et al. Sep 2009 B2
7595967 Moon et al. Sep 2009 B1
7639457 Chen et al. Dec 2009 B1
7660080 Liu et al. Feb 2010 B1
7672080 Tang et al. Mar 2010 B1
7672086 Jiang Mar 2010 B1
7684160 Erickson et al. Mar 2010 B1
7688546 Bai et al. Mar 2010 B1
7691434 Zhang et al. Apr 2010 B1
7695761 Shen et al. Apr 2010 B1
7719795 Hu et al. May 2010 B2
7726009 Liu et al. Jun 2010 B1
7729086 Song et al. Jun 2010 B1
7729087 Stoev et al. Jun 2010 B1
7736823 Wang et al. Jun 2010 B1
7785666 Sun et al. Aug 2010 B1
7796356 Fowler et al. Sep 2010 B1
7800858 Bajikar et al. Sep 2010 B1
7819979 Chen et al. Oct 2010 B1
7829264 Wang et al. Nov 2010 B1
7846643 Sun et al. Dec 2010 B1
7855854 Hu et al. Dec 2010 B2
7869160 Pan et al. Jan 2011 B1
7872824 Macchioni et al. Jan 2011 B1
7872833 Hu et al. Jan 2011 B2
7910267 Zeng et al. Mar 2011 B1
7911735 Sin et al. Mar 2011 B1
7911737 Jiang et al. Mar 2011 B1
7916426 Hu et al. Mar 2011 B2
7918013 Dunn et al. Apr 2011 B1
7968219 Jiang et al. Jun 2011 B1
7982989 Shi et al. Jul 2011 B1
8008912 Shang Aug 2011 B1
8012804 Wang et al. Sep 2011 B1
8015692 Zhang et al. Sep 2011 B1
8018677 Chung et al. Sep 2011 B1
8018678 Zhang et al. Sep 2011 B1
8023231 Guan et al. Sep 2011 B2
8024748 Moravec et al. Sep 2011 B1
8072705 Wang et al. Dec 2011 B1
8074345 Anguelouch et al. Dec 2011 B1
8077418 Hu et al. Dec 2011 B1
8077434 Shen et al. Dec 2011 B1
8077435 Liu et al. Dec 2011 B1
8077557 Hu et al. Dec 2011 B1
8079135 Shen et al. Dec 2011 B1
8081403 Chen et al. Dec 2011 B1
8091210 Sasaki et al. Jan 2012 B1
8094419 Guan Jan 2012 B2
8097846 Anguelouch et al. Jan 2012 B1
8104166 Zhang et al. Jan 2012 B1
8116043 Leng et al. Feb 2012 B2
8116171 Lee Feb 2012 B1
8125856 Li et al. Feb 2012 B1
8134794 Wang Mar 2012 B1
8136224 Sun et al. Mar 2012 B1
8136225 Zhang et al. Mar 2012 B1
8136805 Lee Mar 2012 B1
8141235 Zhang Mar 2012 B1
8146236 Luo et al. Apr 2012 B1
8149536 Yang et al. Apr 2012 B1
8151441 Rudy et al. Apr 2012 B1
8163185 Sun et al. Apr 2012 B1
8164760 Willis Apr 2012 B2
8164855 Gibbons et al. Apr 2012 B1
8164864 Kaiser et al. Apr 2012 B2
8165709 Rudy Apr 2012 B1
8166631 Tran et al. May 2012 B1
8166632 Zhang et al. May 2012 B1
8169473 Yu et al. May 2012 B1
8171618 Wang et al. May 2012 B1
8179636 Bai et al. May 2012 B1
8191237 Luo et al. Jun 2012 B1
8194365 Leng et al. Jun 2012 B1
8194366 Li et al. Jun 2012 B1
8196285 Zhang et al. Jun 2012 B1
8200054 Li et al. Jun 2012 B1
8203800 Li et al. Jun 2012 B2
8208350 Hu et al. Jun 2012 B1
8220140 Wang et al. Jul 2012 B1
8222599 Chien Jul 2012 B1
8225488 Zhang et al. Jul 2012 B1
8227023 Liu et al. Jul 2012 B1
8228633 Tran et al. Jul 2012 B1
8231796 Li et al. Jul 2012 B1
8233248 Li et al. Jul 2012 B1
8248896 Yuan et al. Aug 2012 B1
8254060 Shi et al. Aug 2012 B1
8257597 Guan et al. Sep 2012 B1
8259410 Bai et al. Sep 2012 B1
8259539 Hu et al. Sep 2012 B1
8262918 Li et al. Sep 2012 B1
8262919 Luo et al. Sep 2012 B1
8264797 Emley Sep 2012 B2
8264798 Guan et al. Sep 2012 B1
8270126 Roy et al. Sep 2012 B1
8276258 Tran et al. Oct 2012 B1
8277669 Chen et al. Oct 2012 B1
8279719 Hu et al. Oct 2012 B1
8284517 Sun et al. Oct 2012 B1
8288204 Wang et al. Oct 2012 B1
8289821 Huber Oct 2012 B1
8291743 Shi et al. Oct 2012 B1
8307539 Rudy et al. Nov 2012 B1
8307540 Tran et al. Nov 2012 B1
8308921 Hiner et al. Nov 2012 B1
8310785 Zhang et al. Nov 2012 B1
8310901 Batra et al. Nov 2012 B1
8315019 Mao et al. Nov 2012 B1
8316527 Hong et al. Nov 2012 B2
8320076 Shen et al. Nov 2012 B1
8320077 Tang et al. Nov 2012 B1
8320219 Wolf et al. Nov 2012 B1
8320220 Yuan et al. Nov 2012 B1
8320722 Yuan et al. Nov 2012 B1
8322022 Yi et al. Dec 2012 B1
8322023 Zeng et al. Dec 2012 B1
8325569 Shi et al. Dec 2012 B1
8333008 Sin et al. Dec 2012 B1
8334093 Zhang et al. Dec 2012 B2
8336194 Yuan et al. Dec 2012 B2
8339734 Pentek Dec 2012 B2
8339738 Tran et al. Dec 2012 B1
8339741 Zhang et al. Dec 2012 B2
8341826 Jiang et al. Jan 2013 B1
8343319 Li et al. Jan 2013 B1
8343364 Gao et al. Jan 2013 B1
8349195 Si et al. Jan 2013 B1
8351307 Wolf et al. Jan 2013 B1
8357244 Zhao et al. Jan 2013 B1
8373945 Luo et al. Feb 2013 B1
8375564 Luo et al. Feb 2013 B1
8375565 Hu et al. Feb 2013 B2
8381391 Park et al. Feb 2013 B2
8385157 Champion et al. Feb 2013 B1
8385158 Hu et al. Feb 2013 B1
8394280 Wan et al. Mar 2013 B1
8400731 Li et al. Mar 2013 B1
8404128 Zhang et al. Mar 2013 B1
8404129 Luo et al. Mar 2013 B1
8405930 Li et al. Mar 2013 B1
8409453 Jiang et al. Apr 2013 B1
8413317 Wan et al. Apr 2013 B1
8416540 Li et al. Apr 2013 B1
8419953 Su et al. Apr 2013 B1
8419954 Chen et al. Apr 2013 B1
8422176 Leng et al. Apr 2013 B1
8422342 Lee Apr 2013 B1
8422841 Shi et al. Apr 2013 B1
8424192 Yang et al. Apr 2013 B1
8441756 Sun et al. May 2013 B1
8443510 Shi et al. May 2013 B1
8444866 Guan et al. May 2013 B1
8449948 Medina et al. May 2013 B2
8451556 Wang et al. May 2013 B1
8451563 Zhang et al. May 2013 B1
8454846 Zhou et al. Jun 2013 B1
8455119 Jiang et al. Jun 2013 B1
8456961 Wang et al. Jun 2013 B1
8456963 Hu et al. Jun 2013 B1
8456964 Yuan et al. Jun 2013 B1
8456966 Shi et al. Jun 2013 B1
8456967 Mallary Jun 2013 B1
8458892 Si et al. Jun 2013 B2
8462592 Wolf et al. Jun 2013 B1
8468682 Zhang Jun 2013 B1
8472288 Wolf et al. Jun 2013 B1
8480911 Osugi et al. Jul 2013 B1
8486285 Zhou et al. Jul 2013 B2
8486286 Gao et al. Jul 2013 B1
8488272 Tran et al. Jul 2013 B1
8491801 Tanner et al. Jul 2013 B1
8491802 Gao et al. Jul 2013 B1
8493693 Zheng et al. Jul 2013 B1
8493695 Kaiser et al. Jul 2013 B1
8495813 Hu et al. Jul 2013 B1
8498084 Leng et al. Jul 2013 B1
8506828 Osugi et al. Aug 2013 B1
8514517 Batra et al. Aug 2013 B1
8518279 Wang et al. Aug 2013 B1
8518832 Yang et al. Aug 2013 B1
8520336 Liu et al. Aug 2013 B1
8520337 Liu et al. Aug 2013 B1
8524068 Medina et al. Sep 2013 B2
8526275 Yuan et al. Sep 2013 B1
8531801 Xiao et al. Sep 2013 B1
8532450 Wang et al. Sep 2013 B1
8533937 Wang et al. Sep 2013 B1
8537494 Pan et al. Sep 2013 B1
8537495 Luo et al. Sep 2013 B1
8537502 Park et al. Sep 2013 B1
8545999 Leng et al. Oct 2013 B1
8547659 Bai et al. Oct 2013 B1
8547667 Roy et al. Oct 2013 B1
8547730 Shen et al. Oct 2013 B1
8555486 Medina et al. Oct 2013 B1
8559141 Pakala et al. Oct 2013 B1
8563146 Zhang et al. Oct 2013 B1
8565049 Tanner et al. Oct 2013 B1
8576517 Tran et al. Nov 2013 B1
8578594 Jiang et al. Nov 2013 B2
8582238 Liu Nov 2013 B1
8582241 Yu et al. Nov 2013 B1
8582253 Zheng et al. Nov 2013 B1
8588039 Shi et al. Nov 2013 B1
8593914 Wang et al. Nov 2013 B2
8597528 Roy et al. Dec 2013 B1
8599520 Liu et al. Dec 2013 B1
8599657 Lee Dec 2013 B1
8603593 Roy et al. Dec 2013 B1
8607438 Gao et al. Dec 2013 B1
8607439 Wang et al. Dec 2013 B1
8611035 Bajikar et al. Dec 2013 B1
8611054 Shang et al. Dec 2013 B1
8611055 Pakala et al. Dec 2013 B1
8614864 Hong et al. Dec 2013 B1
8619512 Yuan et al. Dec 2013 B1
8625233 Ji et al. Jan 2014 B1
8625941 Shi et al. Jan 2014 B1
8628672 Si et al. Jan 2014 B1
8630068 Mauri et al. Jan 2014 B1
8634280 Wang et al. Jan 2014 B1
8638529 Leng et al. Jan 2014 B1
8643980 Fowler et al. Feb 2014 B1
8649123 Zhang et al. Feb 2014 B1
8665561 Knutson et al. Mar 2014 B1
8670211 Sun et al. Mar 2014 B1
8670213 Zeng et al. Mar 2014 B1
8670214 Knutson et al. Mar 2014 B1
8670294 Shi et al. Mar 2014 B1
8670295 Hu et al. Mar 2014 B1
8675318 Ho et al. Mar 2014 B1
8675455 Krichevsky et al. Mar 2014 B1
8681594 Shi et al. Mar 2014 B1
8689430 Chen et al. Apr 2014 B1
8693141 Elliott et al. Apr 2014 B1
8703397 Zeng et al. Apr 2014 B1
8705205 Li et al. Apr 2014 B1
8705206 Maeda Apr 2014 B1
8711518 Zeng et al. Apr 2014 B1
8711528 Xiao et al. Apr 2014 B1
8717709 Shi et al. May 2014 B1
8720044 Tran et al. May 2014 B1
8721902 Wang et al. May 2014 B1
8724259 Liu et al. May 2014 B1
8749790 Tanner et al. Jun 2014 B1
8749920 Knutson et al. Jun 2014 B1
8753903 Tanner et al. Jun 2014 B1
8760807 Zhang et al. Jun 2014 B1
8760818 Diao et al. Jun 2014 B1
8760819 Liu et al. Jun 2014 B1
8760822 Li et al. Jun 2014 B1
8760823 Chen et al. Jun 2014 B1
8763235 Wang et al. Jul 2014 B1
8780498 Jiang et al. Jul 2014 B1
8780505 Xiao Jul 2014 B1
8786983 Liu et al. Jul 2014 B1
8790524 Luo et al. Jul 2014 B1
8790527 Luo et al. Jul 2014 B1
8792208 Liu et al. Jul 2014 B1
8792312 Wang et al. Jul 2014 B1
8793866 Zhang et al. Aug 2014 B1
8797680 Luo et al. Aug 2014 B1
8797684 Tran et al. Aug 2014 B1
8797686 Bai et al. Aug 2014 B1
8797692 Guo et al. Aug 2014 B1
8804283 Meloche Aug 2014 B2
8813324 Emley et al. Aug 2014 B2
8830625 Linville Sep 2014 B2
8848317 Shiimoto Sep 2014 B2
8964332 Katada Feb 2015 B1
9153255 Zheng et al. Oct 2015 B1
20090002896 Mallary Jan 2009 A1
20100290157 Zhang et al. Nov 2010 A1
20110086240 Xiang et al. Apr 2011 A1
20110102942 Bai May 2011 A1
20110116195 Cazacu May 2011 A1
20110242707 Yoon Oct 2011 A1
20110249359 Mochizuki Oct 2011 A1
20110255196 Wu Oct 2011 A1
20110292537 Jin Dec 2011 A1
20120111826 Chen et al. May 2012 A1
20120216378 Emley et al. Aug 2012 A1
20120237878 Zeng et al. Sep 2012 A1
20120281314 Lopusnik Nov 2012 A1
20120298621 Gao Nov 2012 A1
20130016443 de la Fuente et al. Jan 2013 A1
20130216702 Kaiser et al. Aug 2013 A1
20130216863 Li et al. Aug 2013 A1
20130257421 Shang et al. Oct 2013 A1
20140154529 Yang et al. Jun 2014 A1
20140175050 Zhang et al. Jun 2014 A1
Non-Patent Literature Citations (3)
Entry
Notice of Allowance dated Jun. 30, 2015 from U.S. Appl. No. 14/289,345, 9 pages.
Notice of Allowance dated Mar. 24, 2015 from U.S. Appl. No. 14/289,345, 8 pages.
Ex Parte Quale Action dated Feb. 11, 2015 from U.S. Appl. No. 14/289,345, 6 pages.
Related Publications (1)
Number Date Country
20150380018 A1 Dec 2015 US
Provisional Applications (1)
Number Date Country
61948417 Mar 2014 US
Divisions (1)
Number Date Country
Parent 14289345 May 2014 US
Child 14847634 US