Claims
- 1. A magneto-optical disk, comprising:
- beginning at a light incident side of the disk for recording and reproducing, a transparent base plate, a first protective dielectric layer formed of nitride in abutting contact with the base plate, an amorphous recording magnetic layer having perpendicular magnetic anisotropy directly following and in abutting contact with the first protective layer, a second protective dielectric layer formed of a nitride directly following and in abutting contact with the recording layer, and a reflective metal layer directly following and in abutting contact with the second layer and formed of a metal electro-chemically less noble than said recording magnetic layer;
- said recording magnetic layer being a magnetic layer mainly comprising TbFeCo and having a film thickness of not less than 180 .ANG. and not more than 280 .ANG. and a Curie point of the magnetic layer being not lower than 170.degree. C. and not higher than 220.degree. C.;
- said first protective dielectric layer having a product of a refractive index and a film thickness thereof of not less than 0.2 and not more than 0.35 times a wavelength of laser light being employed, the wavelength being the same for recording and reproducing;
- said second protective dielectric layer having a product of a refractive index and a film thickness thereof of not less than 0.1 and not more than 0.15 times the wavelength of the laser light employed; and
- said reflective metal layer having a film thickness of not less than 500 .ANG., and not more than 1000 .ANG. and a reflectivity at a boundary with the second protective dielectric layer of not less than 70%.
- 2. The magneto-optical disk according to claim 1 wherein the recording magnetic layer has a thickness of not less than 180 .ANG. and not more than 260 .ANG..
- 3. The magneto-optical disk according to claim 1 wherein the first protective dielectric layer is formed of an element selected from the group consisting of silicon nitride or aluminum nitride.
- 4. The magneto-optical disk according to claim 1 wherein the second protective dielectric layer is formed of an element selected from the group consisting of silicon nitride or aluminum nitride.
- 5. The magneto-optical disk according to claim 1 wherein the product of the refractive index and the film thickness of the second protective dielectric layer is not less than 0.108 and not more than 0.15 times the wavelength of the laser light employed.
- 6. The magneto-optical disk according to claim 1 wherein an organic protective film is formed on the reflective metal layer.
- 7. The magneto-optical disk according to claim 6 wherein the organic protective film is formed of a light curable resin.
- 8. A magneto-optical disk, comprising:
- beginning at a light incident side of the disk for recording and reproducing, a transparent base plate, a first protective dielectric layer formed of nitride in abutting contact with the base plate, an amorphous magnetic recording layer having perpendicular magnetic anisotropy directly following and in abutting contact with the first protective layer, a second protective dielectric layer formed of a nitride directly following and in abutting contact with the recording layer, and a reflective metal layer directly following and in abutting contact with the second layer and formed of aluminum which is electrochemically less noble than said recording magnetic layer;
- said recording magnetic layer being a magnetic layer mainly comprising TbFeCo and having a film thickness of not less than 180 .ANG. and not more than 260 .ANG., and a Curie point of the magnetic layer being not lower than 170.degree. C. and not higher than 220.degree. C.;
- said first protective dielectric layer being formed of an element selected from the group consisting of silicon nitride or aluminum nitride and having a product of a refractive index and a film thickness thereof of not less than 0.2 and not more than 0.35 times a wavelength of laser light employed, the wavelength being the same for recording and reproducing;
- said second protective dielectric layer being formed of an element selected from the group consisting of silicon nitride or aluminum nitride and having a product of a refractive index and a film thickness thereof of not less than 0.1 and not more than 0.15 times the wavelength of the laser light employed;
- said reflective metal layer having a film thickness of not less than 500 .ANG. and not more than 1000 .ANG. and a reflectivity at a boundary with the second protective dielectric layer of not less than 70%; and
- an organic protective film being formed on the reflective metal layer.
Priority Claims (1)
Number |
Date |
Country |
Kind |
1-008286 |
Mar 1989 |
JPX |
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Parent Case Info
This is a continuation of application Ser. No. 345,234, filed May 1, 1989, now abandoned.
US Referenced Citations (6)
Foreign Referenced Citations (3)
Number |
Date |
Country |
0161807 |
Nov 1985 |
EPX |
161807 |
Nov 1985 |
EPX |
0 293 797 |
May 1988 |
EPX |
Continuations (1)
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Number |
Date |
Country |
Parent |
345234 |
May 1989 |
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