Claims
- 1. A magnetoresistive device, in which a permalloy alloy thin film which has been shaped into a predetermined form from a layer of permalloy alloy and thereafter subjected to a heat treatment at a temperature between 200.degree. C. and 350.degree. C. to provide a linear relationship between a magnetic field applied to the film and an output voltage of the film is used as a magnetoresistive film; said permalloy alloy thin film having a linearized magnetic field-output voltage characteristic and a magnetostriction between 1.times.10.sup.-7 and 15.times.10.sup.-6.
- 2. A magnetoresistive device according to claim 1, wherein said heat treatment is effected by flowing an electric current through said thin film.
- 3. A magnetoresistive device according to claim 1, wherein said heat treatment is effected by irradiating the thin film with an electron beam.
- 4. A magnetoresistive device according to claim 1, wherein said heat treatment is effected by irradiating the thin film with a laser beam.
- 5. A magnetoresistive device according to claim 1, wherein said permalloy alloy thin film contains at least one element selected from the group consisting of Rh, Ru, Mo, Cr and V.
- 6. A magnetoresistive device according to claim 1, wherein said heat treatment is effected in an alternating magnetic field.
- 7. A magnetoresistive device according to claim 2, wherein said heat treatment is effected in an alternating magnetic field.
- 8. A magnetoresistive device according to claim 3, wherein said heat treatment is effected in an alternating magnetic field.
- 9. A magnetoresistive device according to claim 4, wherein said heat treatment is effected in an alternating magnetic field.
Priority Claims (1)
Number |
Date |
Country |
Kind |
59-254015 |
Dec 1984 |
JPX |
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Parent Case Info
This application is a continuation of application Ser. No. 803,641, filed Dec. 2, 1985 now abandoned.
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Foreign Referenced Citations (1)
Number |
Date |
Country |
3026498 |
Feb 1982 |
DEX |
Non-Patent Literature Citations (1)
Entry |
Ahm et al., "Magnetic Thin-Film Alloy with Improved Thermal Stability", IBM Technical Disclosure Bulletin, vol. 8, No. 10, Mar. 1966. |
Continuations (1)
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Number |
Date |
Country |
Parent |
803641 |
Dec 1985 |
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