Claims
- 1. In a method of producing silicon carbide crystals, the steps of:
- a. establishing an ionized atmosphere using electrically energized opposed electrodes projected interiorly of a graphite crucible;
- b. injecting a mixture containing a finely-divided silica-like ingredient and a finely-divided carbon-containing reductant ingredient into said crucible from above said ionized atmosphere;
- c. reacting acid mixture ingredients during free-fall by gravity through said ionized atmosphere; and
- d. collecting silicon carbide crystals and the like from the free-fall reaction at a deposit surface in said crucible which is beneath said ionized atmosphere and which is maintained in a select, substantially constant temperature zone position in the furnace thermal gradient range extending from said electrodes to said graphite crucible.
- 2. The method defined by claim 1 wherein said select temperature zone is maintained substantially constant by repositioning portions of the graphite crucible beneath said electrodes.
- 3. The method defined by claim 1 wherein said select temperature zone is maintained substantially constant by removing silicon carbide crystals collected at said deposit surface.
CROSS-REFERENCES
This is a division of application Ser. No. 667,691, filed Mar. 17, 1976, now U.S. Pat. No. 4,080,508.
US Referenced Citations (3)
Number |
Name |
Date |
Kind |
1576275 |
Hartman |
Mar 1926 |
|
2677627 |
Montgomery et al. |
May 1954 |
|
3485591 |
Evans et al. |
Dec 1969 |
|
Foreign Referenced Citations (1)
Number |
Date |
Country |
1336392 |
Jul 1963 |
FRX |
Divisions (1)
|
Number |
Date |
Country |
Parent |
667691 |
Mar 1976 |
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