Claims
- 1. A process for manufacturing anhydrous hydrogen fluoride with reduced levels of arsenic impurity from arsenic contaminated anhydrous hydrogen fluoride which comprises the steps of:
- (a) contacting said anhydrous hydrogen fluoride with an effective amount of hydrogen peroxide to oxidize the arsenic impurity in the presence of a catalyst which comprises a catalytic amount of
- (i) a component selected from the group consisting of an organic molybdenum compound, vanadium, and a vanadium compound and,
- (ii) a phosphate compound, at a temperature and for a period of time sufficient to oxidize volatile trivalent arsenic impurities in the anhydrous hydrogen fluoride to non-volatile pentavalent arsenic compounds, and
- (b) distilling the resulting mixture and recovering anhydrous hydrogen fluoride with reduced levels of arsenic impurity.
- 2. The process of claim 1 in which the arsenic contaminated hydrogen fluoride is free of an amount of organic contaminants which would interfere with the hydrogen peroxide oxidation of said arsenic impurities.
- 3. The process of claim 2 wherein more than the stoichiometric amount of hydrogen peroxide is used which is required for oxidation of said trivalent arsenic impurities to said pentavalent arsenic compounds.
- 4. The process of claim 3 wherein the anhydrous hydrogen fluoride starting material has a purity of 99.95% HF or better.
- 5. The process of claim 3 wherein the hydrogen peroxide is 50% to 70% by weight commercial grade hydrogen peroxide.
- 6. The process of claim 1 wherein said component (i) is an organic molybdenum compound.
- 7. The process of claim 1 wherein said component (i) is vanadium.
- 8. The process of claim 1 wherein said component (i) is an organic vanadium compound.
- 9. The process of claim 1 wherein said component (i) is an inorganic vanadium compound.
- 10. The process of claim 1 wherein said component (i) is ammonium vanadate.
- 11. The process of claim 1 wherein said component (i) is sodium vanadate.
- 12. The process of claim 3 wherein the amount of hydrogen peroxide used is at least 3 times the stoichiometric amount.
- 13. The process of claim 3 wherein the reaction is carried out at a temperature in the range of about 15.degree. to about 75.degree. C.
- 14. The process of claim 3 wherein the amount of the metal component in the catalyst is at least about 3.7 ppm based on 100% HF and the amount of the phosphate component in the catalyst is at least about 3.5 ppm based on 100% HF.
- 15. The process of claim 3 wherein the amount of said metallic compound in the catalyst is about 10 to about 65 ppm based on 100% HF.
- 16. A process for manufacturing anhydrous hydrogen fluoride with reduced levels of arsenic impurity from arsenic and organic material contaminated anhydrous hydrogen fluoride which comprises the steps of:
- (A) contacting said anhydrous hydrogen fluoride with:
- (1) an effective amount of hydrogen peroxide to oxidize the arsenic impurity, in the presence of a catalyst which comprises a catalytic amount of:
- (a) a component selected from the group consisting of an organic molybdenum compound, vanadium, and a vanadium compound, and
- (b) a phosphate compound, and
- (2) an effective amount of an oxidizing agent to oxidize the organic material present, at a temperature and for a period of time sufficient to oxidize volatile trivalent arsenic impurities in the anhydrous hydrogen fluoride to non-volatile pentavalent arsenic compounds, and
- (B) distilling the resulting mixture and recovering anhydrous hydrogen fluoride with reduced levels of arsenic impurity.
- 17. The process of claim 16 wherein the oxidizing agent is nitric acid or a salt thereof.
- 18. The process of claim 16 wherein the oxidizing agent is nitric acid.
- 19. The process of claim 16 wherein the oxidizing agent is a salt of nitric acid.
- 20. The process of claim 16 wherein the oxidizing agent is sodium nitrate.
CROSS-REFERENCE TO RELATED APPLICATION
This application is a continuation-in-part application of copending patent application Ser. No. 014,422 filed Feb. 12, 1987, now U.S. Pat. No. 4,756,899.
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Continuation in Parts (1)
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Number |
Date |
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Parent |
14422 |
Feb 1987 |
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