Manufacturing Method of Phosphor Film

Abstract
Provided is a manufacturing method of a high-performance phosphor thin film material that enables a crystallized pervoskite-related Ti, Zr oxide thin film to be formed on a glass or a silicon substrate. This manufacturing method of a phosphor thin film includes a step of forming an organic metal thin film or a metal oxide film obtained by adding at least one element selected from a group comprised of Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu to a metal oxide represented with a composition formula of ABO3, A2BO4, A3B2O7 (provided that there may be a deficiency at the A, B, O sites) wherein A is an element selected from Ca, Sr and Ba, and B is a metal element selected from Ti and Zr on a substrate, and a step of irradiating an ultraviolet lamp to the substrate at room temperature and thereafter irradiating an ultraviolet laser thereto while retaining the substrate at a temperature of 400° C. or less. The film is subject to oxidation treatment after being crystallized.
Description

DESCRIPTION OF DRAWINGS


FIG. 1 shows the XRD patterns of films prepared by thermal treatment;



FIG. 2 shows the XRD patterns of films prepared by laser beam irradiation of the present invention;



FIG. 3 shows the PL spectra of films prepared by thermal treatment and laser beam irradiation; and



FIG. 4 shows the PL spectra of films after laser irradiation and films that were subject to oxidizing after laser irradiation.





DETAILED DESCRIPTION

The manufacturing method of a phosphor according to the present invention is characterized in that a metal organic compound solution for forming a phosphor is applied on a support, and the film is irradiated with an ultraviolet laser during the subsequent drying process, calcination process and baking process. A laser beam may be used as the ultraviolet radiation in the present invention.


Depending on the objective, the irradiation process may be performed during a prescribed process, or before or after the respective processes. Further, it is also possible to spin-coat the metal organic compound solution on a substrate, dry the substrate for solvent elimination in a thermostatic bath at 130° C., thereafter mount the sample on a sample holder in a laser chamber, and perform laser irradiation at room temperature.


In the present invention, as the metal for oxide to form a phosphor substance, a precursor film obtained by adding at least one element selected from a group comprised of Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu to an oxide represented with a composition formula of ABO3, A2BO4, A3B2O7 (provided that there may be a deficiency at the A, B, O sites) wherein A is Ca, Sr and Ba, and B is Ti and Zr. One among Al, Ga and In may also be added thereto.


The present invention is also effective for a thin film containing minute amounts of conductive substances selected from In2O3, SnO2, ZnO and metal in advance.


As a result of irradiating laser on a film applied with a metal organic compound and thereafter dried and a film at the initial stage of calcinations, and thereafter performing appropriate thermal treatment to these laser irradiated films, for instance, the following effects were confirmed in the case of preparing a CaTiO3:Pr film.


After the process of applying and drying a metal organic compound solution for preparing a CaTiO3:Pr film on a support, by irradiating a laser beam at a temperature of 400° C. or lower after the calcination process of thermally decomposing the organic constituent in the metal organic compound at a temperature of 400° C., it has been discovered that crystallization is promoted at a low temperature.


With conventional thermal MOD process for the preparation of oxide film, as shown in FIG. 1, it is known that crystallization will not occur at 400° C., and that the crystallization reaction is promoted at 900° C. With the manufacturing method of a phosphor film of the present invention, thin film crystal growth has been confirmed at a low temperature from room temperature to 400° C. as shown in FIG. 2.



FIG. 3 shows the measurement results of the photoluminescence of a film prepared by the thermal metal organic deposition(MOD) and laser-assisted MOD methods. As shown in FIG. 3, although no light emission can be observed with the film subject to thermal treatment at 400° C., the film additionally subject to laser irradiation emitted light even at room temperature. Although the luminescence intensity will be higher when the temperature during laser irradiation is higher, it has been discovered that the luminescence intensity can be doubled by subjecting the laser irradiated film to oxidation treatment (FIG. 4).


In the present invention, as the support, one type selected from organic substrate, glass substrate, polycrystalline and single crystalline oxide substrates such as strontium titanate (SrTiO3), lanthanum aluminate (LaAlO3), magnesium oxide (MgO), lanthalum strontium tantalum aluminum oxide ((LaxSr1-x)(AlxTa1-x)O3), neodymium gallate (NdGaO3), yttrium aluminate (YAlO3), aluminum oxide (Al2O3), yttria-stabilized zirconia ((Zr, Y)O2, YSZ) substrate may be used.


Specific examples of the present invention are now explained in detail below, but the present invention is not limited by these Examples in any way.


A quartz substrate and a non-alkali glass substrate were used as the substrate for the Examples in the present invention, and a solution obtained by mixing a 2-ethyl-1-hexanoate Ti solution to a strontium 2-ethylhexanoate solution was used as the raw material solution. Praseodium 2-ethylhexanoate was also used. KrF excimer laser, ArF excimer laser, and XeCl excimer laser were used for the irradiation of ultraviolet radiation.


EXAMPLE 1

A 2-ethyl-1-hexanoate Ti solution and praseodium 2-ethylhexanoate were added to a calcium 2-ethylhexanoate solution in a definite proportion to prepare a mixed solution (C1).


The C1 solution was spin-coated on a quartz substrate at 4000 rpm for 10 seconds, and heated at 400° C. for 10 minutes. Subsequently, the substrate temperature was retained at 250° C. and the spin-coated film was irradiated with a pulsed laser of 248 nm, 20 Hz, and at a fluence of 80 mJ/cm2 in the atmosphere for 5 minutes. The prepared film showed high luminescence intensity based on ultraviolet excitation only at the irradiated portion.


EXAMPLE 2

When the spin-coated film was irradiated with laser at a fluence of 100 mJ/cm2 in Example 1, only the irradiated portion showed high luminescence intensity based on ultraviolet excitation.


EXAMPLE 3

When the spin-coated film was irradiated with laser at a fluence of 120 mJ/cm2 in Example 1, only the irradiated portion showed high luminescence intensity based on ultraviolet excitation.


EXAMPLE 4

When the pulse rate of irradiation was set to 50 Hz in Example 1, only the irradiated portion showed high luminescence intensity based on ultraviolet excitation.


EXAMPLE 5

When the pulse rate of irradiation was set to 10 Hz in Example 1, only the irradiated portion showed high luminescence intensity based on ultraviolet excitation.


EXAMPLE 6

When the quartz substrate was replaced with an ITO/glass substrate (ITO coated on a glass substrate) in Example 1, a crystallized CaTiO3:Pr film was obtained at the irradiated portion. Further, only the irradiated portion showed high luminescence intensity based on ultraviolet excitation.


EXAMPLE 7

When the quartz substrate was replaced with a non-alkali glass substrate in Example 1, only the irradiated portion showed high luminescence intensity based on ultraviolet excitation.


EXAMPLE 8

When the temperature of calcination to be performed after spin coating was set at 25 to 250° C. in Example 1, although only the irradiated portion showed high luminescence intensity based on ultraviolet excitation, the film crystallinity was inferior compared to a case when the calcination temperature was set to 400° C., and the increase of luminescence intensity after oxygenation was small. Thus, the calcination temperature is preferably around 400° C.


EXAMPLE 9

A 2-ethyl-1-hexanoate Ti solution and praseodium 2-ethylhexanoate were added to a calcium 2-ethylhexanoate solution at a ratio of Ca:Ti:Pr=1.997:1:0.002 to prepare a mixed solution (C2).


The C2 solution was spin coated on a quartz substrate at 4000 rpm for 10 seconds, and heated at 400° C. for 10 minutes. Subsequently, the substrate temperature was retained at 250° C. and the spin-coated film was irradiated with a pulsed laser of 248 nm, 20 Hz, and a fluence of 80 mJ/cm2 in the atmosphere for 5 minutes. As a result, the creation of a Ca2TiO4:Pr film was acknowledged by X-ray diffraction. The prepared film showed high luminescence intensity, equivalent to CaTiO3:Pr, based on ultraviolet excitation only at the irradiated portion.


EXAMPLE 10

A 2-ethyl-1-hexanoate Ti solution and praseodium 2-ethylhexanoate were added to a calcium 2-ethylhexanoate solution at a ratio of Ca:Ti:Pr=2.994:2:0.004 to prepare a mixed solution (C3).


The C3 solution was spin-coated on a quartz substrate at 4000 rpm for 10 seconds, and heated at 400° C. for 10 minutes. Subsequently, the substrate temperature was retained at 250° C. and the spin-coated film was irradiated with a pulsed laser of 248 nm, 20 Hz, and a fluence of 80 mJ/cm2 in the atmosphere for 5 minutes. As a result, the creation of a Ca3Ti2O7:Pr film was acknowledged by X-ray diffraction. The luminescence intensity of the prepared film was six times that of the CaTiO3:Pr film.


EXAMPLE 11

A 2-ethyl-1-hexanoate Ti solution and praseodium 2-ethylhexanoate were added to a strontium 2-ethylhexanoate solution at a ratio of Sr:Ti:Pr=0.998:1:0.002 to prepare a mixed solution (S1).


The S1 solution was spin-coated on a quartz substrate at 4000 rpm for 10 seconds, and heated at 400° C. for 10 minutes. Subsequently, the substrate temperature was retained at 250° C. and the spin-coated film was irradiated with a pulsed laser of 248 nm, 20 Hz, and a fluence of 80 mJ/cm2 in the atmosphere for 5 minutes. As a result, the formation of a SrTiO3:Pr film was identified by X-ray diffraction. Only the irradiated portion of the prepared film emitted light.


EXAMPLE 12

A 2-ethyl-1-hexanoate Ti solution, praseodium 2-ethylhexanoate, and an aluminum acetylacetonate solution were added to a strontium 2-ethylhexanoate solution at a ratio of Sr:Ti:Pr:Al 1:1:0.002:0.15 to prepare a mixed solution (S2).


The S2 solution was spin-coated on a quartz substrate at 4000 rpm for 10 seconds, and heated at 400° C. for 10 minutes. Subsequently, the substrate temperature was retained at 250° C. and the spin-coated film was irradiated with a pulsed laser of 248 nm, 20 Hz, and a fluence of 80 mJ/cm2 in the atmosphere for 5 minutes. As a result, the formation of a SrTiO3:Pr,Al film was identified by X-ray diffraction. Only the irradiated portion of the prepared film emitted light.


EXAMPLE 13

A 2-ethyl-1-hexanoate Ti solution and praseodium 2-ethylhexanoate were added to a strontium 2-ethylhexanoate solution at a ratio of Sr:Ti:Pr=2:1:0.002 to prepare a mixed solution (S3).


The S3 solution was spin coated on a quartz substrate at 4000 rpm for 10 seconds, and heated at 400° C. for 10 minutes. Subsequently, the substrate temperature was retained at 250° C. and the spin-coated film was irradiated with a pulsed laser of 248 nm, 20 Hz, and a fluence of 80 mJ/cm2 in the atmosphere for 5 minutes. As a result, the formation of a Sr2TiO4:Pr film was identified by X-ray diffraction. Only the irradiated portion of the prepared film emitted light.


EXAMPLE 14

A 2-ethyl-1-hexanoate Ti solution and praseodium 2-ethylhexanoate were added to a strontium 2-ethylhexanoate solution at a ratio of Sr:Ti:Pr=3:2:0.004 to prepare a mixed solution (S4).


The S4 solution was spin coated on a quartz substrate at 4000 rpm for 10 seconds, and heated at 400° C. for 10 minutes. Subsequently, the substrate temperature was retained at 250° C. and the spin-coated film was irradiated with a pulsed laser of 248 nm, 20 Hz, and a fluence of 80 mJ/cm2 in the atmosphere for 5 minutes. As a result, the formation of a Sr3Ti2O7:Pr film was identified by X-ray diffraction. Only the irradiated portion of the prepared film emitted light.


EXAMPLE 15

A strontium 2-ethylhexanoate solution, a 2-ethyl-1-hexanoate Ti solution, and praseodium 2-ethylhexanoate were added to a calcium 2-ethylhexanoate solution at a ratio of Ca:Sr:Ti:Pr=2:1:2:0.002 to prepare a mixed solution (S5).


The S5 solution was spin coated on a quartz substrate at 4000 rpm for 10 seconds, and heated at 400° C. for 10 minutes. Subsequently, the substrate temperature was retained at 250° C. and the spin-coated film was irradiated with a pulsed laser of 248 nm, 20 Hz, and a fluence of 80 mJ/cm2 in the atmosphere for 5 minutes. As a result, the formation of a (Ca, Sr)3Ti2O7:Pr film was identified by X-ray diffraction. Only the irradiated portion of the prepared film emitted light.


EXAMPLE 16

The C1 solution was spin coated on a quartz substrate at 4000 rpm for 10 seconds, and irradiated with an ultraviolet lamp at room temperature for 10 minutes. Subsequently, the substrate temperature was retained at 250° C. and the spin-coated film was irradiated with a pulsed laser of 248 nm, 20 Hz, and a fluence of 80 mJ/cm2 in the atmosphere for 5 minutes. As a result, the formation of a CaTiO3:Pr film was identified by X-ray diffraction. Only the irradiated portion of the prepared film emitted light.


COMPARATIVE EXAMPLE 1

The C1 solution was spin-coated on a quartz substrate at 3000 rpm for 10 seconds, and heated at 400° C. for 10 minutes. As a result, the deposited film did not emit light.


COMPARATIVE EXAMPLE 2

The C1 solution was spin-coated on non-alkali glass at 3000 rpm for 10 seconds, and heated at 400° C. for 10 minutes. As a result, the deposited film did not emit light.


COMPARATIVE EXAMPLE 3

The C1 solution was spin-coated on an ITO/quartz substrate at 3000 rpm for 10 seconds, and heated at 400° C. for 10 minutes. As a result, the deposited film did not emit light.

Claims
  • 1. A manufacturing method of a metal oxide phosphor thin film, comprising: a step of forming a thin film of metal oxide obtained by adding at least one element selected from a group comprised of Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu to a metal oxide represented with a composition formula of ABO3, A2BO4, A3B2O7 wherein A is an alkaline-earth metal element selected from Ca, Sr and Ba, and B is a metal element selected from Ti and Zr, or a thin film of organometallic salt capable of forming a metal oxide on a substrate and retaining said substrate at a temperature of 25 to 500° C.; anda step of crystallizing said metal oxide or said thin film of organometallic salt on said substrate while irradiating ultraviolet radiation thereto so as to form a metal oxide on said substrate.
  • 2. The manufacturing method of a metal oxide phosphor thin film according to claim 1, wherein a metal oxide or organometallic salt containing at least one element selected from Al, Ga and In is further added to said metal oxide or said organometallic salt.
  • 3. The manufacturing method of a metal oxide phosphor thin film according to claim 1 or claim 2, wherein said thin film of metal oxide or organometallic salt is prepared by MBE, vacuum deposition, CVD, or a chemical solution deposition method (spin-coating or spray coating methods).
  • 4. The manufacturing method of a metal oxide phosphor thin film according to claim 1 or claim 2, wherein an organic compound in said organometallic salt is one type selected from β-diketonato, long-chain alkoxide with carbon number 6 or greater, and organic acid salt that may contain halogen.
  • 5. The manufacturing method of a metal oxide phosphor thin film according to claim 1 or claim 2, wherein said ultraviolet radiation is a pulsed laser of 400 nm or less.
  • 6. The manufacturing method of a metal oxide phosphor thin film according to claim 1 or claim 2, wherein an ultraviolet lamp is irradiated to said thin film of metal oxide or organometallic salt, and an ultraviolet laser is thereafter irradiated at a temperature of 200° C. to 400° C. or less.
  • 7. The manufacturing method of a metal oxide phosphor thin film according to claim 1 or claim 2, wherein said thin film of metal oxide or organometallic salt is heated at 400° C., and thereafter irradiated with an ultraviolet laser at a temperature of 200° C. to 400° C. or less.
  • 8. The manufacturing method of a metal oxide phosphor thin film according to claim 1 or claim 2, wherein said thin film of metal oxide or organometallic salt is irradiated with an ultraviolet laser at room temperature under a condition combining the conditions of repetition rate and fluence that will not cause an abrasion, and thereafter irradiated with a laser beam having a fluence of 30 mJ/cm2 or greater with a plurality of fluences.
  • 9. A manufacturing method of a phosphor metal oxide thin film, comprising: a step of subjecting a metal oxide film obtained by laser irradiation to oxidation treatment using an oxidizing solution, or oxidation treatment under an oxidation atmosphere based on thermal treatment, or oxidation treatment based on ultraviolet irradiation in a solution and under an oxidizing atmosphere, or oxidation treatment using oxygen plasma.
  • 10. The manufacturing method of a metal oxide phosphor thin film according to claim 1, wherein said metal oxide has a metal composition formula of (Ca1-x-ySrxBay)3(Ti1-zZrz)2O7(Ca1-x-ySrxBay)2(Ti1-zZrz)O4, 0≦x+y≦1, 0≦x<1, 0≦y≦1, 0≦z≦1 as its base material, and is added with at least one among Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu.
  • 11. The manufacturing method of a metal oxide phosphor thin film according to claim 10, wherein said metal oxide further contains one or more elements selected from Al, Ga and In.
Priority Claims (1)
Number Date Country Kind
2006-224627 Aug 2006 JP national