1 This application claims priority from European patent application No. EP04103032.1, filed Jun. 29, 2004, which is incorporated herein by reference.
The present invention relates generally to the field of optics and to optical devices, more specifically to optical communications and, in particular, to the manufacturing of optical devices used in optical communications. Even more particularly, the present invention concerns aspects related to the manufacturing, including packaging, of optical devices that include Bragg gratings.
In the field of optics, optical devices are known that include Bragg gratings, particularly optical fiber Bragg gratings.
One such device is the so-called external cavity laser, also referred to as fiber grating laser or Hybrid Distributed Bragg Reflector (shortly, HDBR) laser.
As known in the art, a HDBR laser is formed by an active element (the optical source) and a reflector. The active element may comprise a semiconductor chip in which a Fabry-Perot semiconductor laser diode, or a Semiconductor Optical Amplifier (SOA), is integrated. The laser diode or, respectively, the SOA, has a first facet coated with a layer of reflective material, and a second, opposed facet coated with a layer of anti-reflection material. The reflector comprises a Bragg grating, formed in an optical fiber that is coupled to the active element, the second facet of which faces a tip or termination of the optical fiber.
In the PCT application WO 01/91259 (which is incorporated by reference) a HDBR laser adapted to the use in the field of optical communications, particularly in applications requiring very high transmission capacity (expressed as the transmission distance by the bit rate by the number of optical channels) has been described.
In order to be adapted to the use in such applications, a laser should be capable of being modulated at very high frequency (of the order of some GHz); additionally, it should have a very narrow optical emission spectrum; moreover, the emission wavelength should be very precise and stable in time, compared to the ITU grid.
The aspects inherent to the high-frequency modulation of the HDBR laser are described in the already cited WO 01/91259; without entering into excessive details, in that document it is described how to design the Bragg grating in order to ensure that the laser oscillates on a prescribed mode, even under condition of high-frequency direct modulation.
The narrowness of the optical emission spectrum is an inherent characteristic of HDBR lasers: it is in fact known in literature that this type of lasers have a rather pure continuous wave spectrum.
Emission wavelength precision and stability over time are two additional important requirements to be satisfied, so as to respect the standardized wavelengths specified in the ITU grid, and not to invade, during time, regions of the spectrum adjacent to that associated with the occupied optical communication channel; stability of the emission wavelength is in particular required to reduce, as far as possible, the cross-talk on adjacent channels.
The emission wavelength of an HDBR laser depends on the reflection wavelength of the Bragg grating; as known, the Bragg grating is substantially equivalent to a mirror reflecting optical radiation of a particular wavelength. The commercially available Bragg gratings, e.g. fiber Bragg gratings, exhibit a relatively large tolerance in respect of the grating reflection wavelength, due to production process yield considerations. Thus, unless specific measures are adopted, the resulting emission wavelength of an HDBR laser is rather imprecise.
In order to correct deviations of the laser emission wavelength from the target one, post-manufacturing calibration is often necessary during the packaging phase. In particular, the laser emission wavelength can be adjusted by applying a controlled stress to the fiber containing the grating.
Stability of the emission wavelength over time depends on the fact that the controlled stress applied to the fiber during the calibration is kept constant in time. In addition to this, it is to be considered that the grating reflection wavelength is also affected by variations in the operating environment temperature. Under this respect, it has been observed that even in cases where a thermal regulation element such as a Peltier cell is provided in the packaged optical device for thermally stabilizing the laser, the Bragg grating is usually positioned relatively far away from such thermal regulation element, being instead rather close to the package cover; heat originated outside the laser device can thus flow into the laser package and affect the frequency response of the Bragg grating; in particular, it has been observed that there is a linear relationship between the grating reflection wavelength variation and the Bragg grating temperature, with proportionality factor ranging from 0.0089 nm/C to 0.023 nm/C, depending on the specific packaging conditions.
In the light of the state of the art outlined in the foregoing, one of the problems that has been faced is how to ensure precision and stability of the spectral characteristics of a Bragg grating of the type used for example in HDBR lasers, particularly for high-capacity optical communications applications.
In particular, engineers have faced the problem of how to ensure that the optical radiation emitted by an HDBR laser is precise and stable over time, irrespective of changes in the operating conditions.
According to an aspect of the present invention, there is provided a method of producing an optical device including a Bragg grating formed in an optical waveguide. The method comprises:
providing a support substrate;
positioning the optical waveguide on the substrate with respect to an optical source so as to achieve a desired optical coupling of optical power emitted by the optical source into the optical waveguide;
attaching the waveguide to the support substrate in correspondence to a first location along the waveguide, said first location being at one side of the Bragg grating;
attaching the waveguide to the support substrate in a correspondence of a second location along the waveguide, said second location being at an opposite side of the Bragg grating, so as to block the Bragg grating in a first stressed condition, so that the first stress condition is “frozen” in the Bragg grating.
For the purposes of this discussion, by “stressed condition” it is intended any possible condition of stress applied to the Bragg grating, including a zero- or substantially zero-stress condition.
Other aspects of the present invention concern an optical device, a method of tuning an optical device and a tunable optical device.
Features and advantages of the present invention will be made apparent by the following detailed description of some embodiments thereof, provided merely by way of non-limitative examples, description that will be conducted making reference to the annexed drawings.
In
Making reference to the drawings, an Optical Sub-Assembly (OSA) 100 includes a semiconductor material chip 105 wherein an optical active element, such as a laser diode, is integrated, attached (typically, bonded), in correspondence of a respective seat, to an OSA support substrate 110, in a material having sufficiently high thermal conductivity properties, for example of silicon or other semiconductors, SiC, diamond, SiGe, GaAs, InP, copper alloys, metals with low thermal expansion properties.
The optical active element 105, e.g. the laser diode, comprises for example a PN homojunction, such as of GaAs or InP, or alternatively an heterojunction, such as InP/InGaAsP. By way of example, a GaAs laser can be used in applications that provide for exploiting the first attenuation window of optical fibers, corresponding to wavelengths in the range 0.8 to 0.9 μm; a InP/InGaAsP laser can instead operate in the second and third optical fiber attenuation windows, corresponding to wavelengths of about 1.3 to 1.55 μm. However, the invention is not thus limited, applying as well to emitting sources operating at a shorter wavelength (UV or visible spectrum) or at longer one (near or far IR).
The optical active element 105 has a first and a second opposite facets 105a, 105b (corresponding to the facets of the chip 105); the first facet 105a is an optically reflecting facet (the chip facet is coated by a film of reflecting material), whereas the second facet 105b is only partially reflecting (the chip facet is coated by a film of low-reflectivity or anti-reflecting material) and forms an output port for the optical radiation.
The optical active element 105 is further provided with electrical terminals (not shown in the drawings for the sake of clarity) for applying a bias and modulation current I for the laser diode.
In order to form a HDBR laser, the laser diode 105 is coupled to an external optical waveguide, particularly an optical fiber 115 in a section of which a Bragg grating 120 is formed. In particular, the second, partially-reflecting facet 105b of the optical active element 105 is in optical coupling relationship with an input termination 115a of the fiber 115, proximate to which the Bragg grating 120 is located.
Techniques for forming Bragg gratings in optical waveguides, particularly optical fibers are known in the art, and are not limitative to the present invention.
In one embodiment, the Bragg grating 120 is realized according to the teachings provided in the already cited WO 01/91259, which is incorporated by reference; in such a way, a HDBR laser capable of being directly modulated at high frequency can be obtained. However, it is intended that the Bragg grating might as well be realized in different ways, not being per-se a limitation for the present invention.
Preferably, the input termination 115a of the fiber 115 is treated so as to form a lens, which allows enhancing the optical coupling to the facet 105b of the optical active element 105.
The OSA support substrate 110 is mounted to a thermal regulation element, e.g. a peltier cell 125, for stabilizing the temperature of the OSA, particularly of the optical active element 105 and the Bragg grating 120, with the purpose of reducing or eliminating thermal drifts of these two elements of the OSA.
According to the first embodiment of the invention being described, the optical active element 105 is first attached (bonded) to the OSA support substrate 110. Then, the fiber 115 is positioned on the OSA support substrate 110, having care to ensure proper alignment, and the distance of the fiber input termination 115a with respect to the radiation-emitting, second facet 105b of the element 105, so as to ensure good optical coupling. To this purpose, as depicted in
Once the fiber 115 has been correctly positioned, the fiber 115 is attached to the OSA support substrate 110 at a first attachment point. In particular, as shown in
In this way, a HDBR laser emitting the desired optical power is obtained; the emission spectrum is relatively narrow, a peculiarity of this type of laser; the emission wavelength is determined by the frequency response of the Bragg grating in a stressed condition that corresponds to a substantially zero stress, i.e. such a wavelength corresponds to the reflection wavelength of the Bragg grating in a substantially zero-stress condition.
In order to tune the laser emission wavelength to the desired value, particularly according to the ITU wavelengths grid, which may, and typically does, differ from the above-mentioned substantially zero-stress emission wavelength, to the Bragg grating 120 is applied a controlled stress; in particular, as shown in
For example, starting from a substantially zero-stress emission wavelength of 1540 nm, by applying a compressive stress of approximately 90 N, the emission wavelength may be varied by approximately 1.1 nm, or by 7 nm if a tensile stress of 0.4 GPa is applied.
Once the target emission wavelength is reached, the corresponding stress is “frozen” in the Bragg grating, by attaching the fiber 115 to the OSA support substrate 110 at a second attachment point. In particular, as shown in
Having thus frozen into the Bragg grating the stress that achieves the target emission wavelength, by attachment, particularly bonding the fiber 115 to the OSA, in the two attachment points, the stress applied to the fiber is maintained over time, and the Bragg grating is kept in the corresponding stress condition, so as to maintain the precision of the emission wavelength over time.
However, variations in the operating temperature, particularly the temperature of the Bragg grating, may cause the emission wavelength to change over time.
Temperature variations of the OSA, particularly of the Bragg grating 120, are reduced by the thermal regulation element, e.g. the peltier cell 125.
However, it has been observed that in some cases it might be preferable to improve the thermal regulation capabilities of the peltier cell 125. Thus, as shown in
The OSA 100 may at this point be placed in a respective package 155, as schematically shown in
Thanks to the provision of the cap 150, even though the Bragg grating 120 may be positioned relatively far away from the peltier cell 125, close to the package cover 170, the heat originated outside the package 155, possibly flowing thereinto, typically does not substantially affect the frequency response of the Bragg grating, whose operating temperature is kept regulated by the fact that the cap 150 is thermally-conductive, and is placed in thermal contact with the substrate 110, in turn thermally-stabilized by the thermal regulation element 125. The cap 150 acts in other words as a thermal shield for the Bragg grating 120.
It is observed that the OSA support substrate 110 might as well be mounted onto the peltier cell 125 at the time the OSA 100 is inserted into the package 155, instead of before.
Another embodiment of the present invention is presented in
The first and second OSA substrates 310-1 and 310-2 are soldered to a common substrate 313, in a thermally-conductive material. In particular, the common substrate 313 is made of a controllably deformable material, particularly a piezoelectric material, and is provided with a first and a second electrodes 315a and 315b adapted for applying a suitable electric field to the common substrate 313, so as to induce therein a controlled deformation.
The fiber 115 is first positioned having care to ensure a proper alignment, and the distance of the fiber input termination 115a with respect to the radiation-emitting, second facet 105b of the element 105, so as to ensure good optical coupling. As in the first embodiment described before, the optical power coupled into the fiber 115 may be measured by a suitable instrument 130, for example an optical power meter connected to an output termination of the fiber 115. While the fiber 115 is moved on the OSA substrate 110 with respect to the optical active element 105, the optical power emitted by the latter and coupled into the fiber is monitored by the optical power meter 130; the correct positioning of the fiber 115 is considered achieved when a target optical power is measured by the instrument 130.
Once the fiber 115 has been correctly positioned, it is attached to the first OSA substrate 310-1 at a first attachment point. In particular, as shown in
Two exemplary procedures are presented hereinafter that are adapted to tune the emission wavelength of the laser.
A first tuning procedure calls for attaching, e.g. bonding (by solder) 135b the fiber 115 to the second OSA substrate 310-2, at the second fiber bonding site 310b in an initial stress condition of substantially zero stress, without controlling the emission wavelength before attaching the fiber, but having care to ensure that the piezoelectric material common substrate 313 is not in either one of the two full-scale conditions (i.e., maximum extension or maximum contraction); this can for example be done by applying to the piezoelectric common substrate 313 a suitable voltage V through the electrodes 315a and 315b, where by suitable voltage there is intended a voltage such that the piezoelectric material is not in a full-scale condition (i.e., neither a zero voltage nor a maximum applicable voltage), and keeping the common substrate biased in this way while attaching the fiber 115 at the second point. Thus, the substantially zero-stress condition of the Bragg grating 120 corresponds to a deformation state of the common substrate 313 that is intermediate to the full-scale deformation conditions of the piezoelectric material. At a later stage, possibly directly in use, the emission wavelength of the laser can be tuned by properly biasing the common substrate 313, applying to the common substrate 313 a voltage higher or lower than the voltage V corresponding to the initial zero-stress condition of the Bragg grating, so as to vary the position of the Bragg grating equivalent mirror and thus tune the emission wavelength of the laser.
A second tuning procedure calls for preliminarily bringing the deformable common substrate 313 of piezoelectric material to a selected one of the two opposite full-scale deformation conditions, i.e. maximum extension or maximum contraction; this can be done by applying to the common substrate 313 a suitable voltage V, through the electrodes 315a and 315b; for example, a voltage V substantially equal to zero may correspond to a rest condition of the material, corresponding (case (a)) for example to the maximum contraction (first full-scale), while a voltage V equal to the maximum applicable voltage may correspond (case (b)) to a maximum extension condition of the material (second full-scale). Before attaching the fiber 115 at the second point, it is determined that the laser emission wavelength is slightly lower (in case (a)) or slightly higher (in case (b)) than the target wavelength, e.g. the center-band wavelength of the selected ITU channel. This can be done by monitoring the emission wavelength of the laser by means of a suitable instrument, e.g. the spectrum analyzer 140, and if necessary, applying a controlled (axial) stress to the fiber 115, thus to the Bragg grating 120. The fiber 115 is then bonded 135b to the second bonding site 310a. In this way, the emission wavelength of the laser can be tuned even at a later time, possible in use, by applying a suitable voltage to the piezoelectric common substrate 313. In particular, in case (a), by applying to the piezoelectric material a voltage V higher than zero, the common substrate 313 is caused to extend, thus a shift of the laser emission wavelength towards the red is achieved; in case (b), by applying to the piezoelectric material a voltage V lower than the maximum voltage, the extension of the common substrate 313 is reduced, thus a shift towards the blue of the emission wavelength is achieved.
Referring to
The OSA 300 may, at this point, be placed in the respective package 155, as schematically shown in
Compared to the first embodiment described, this second embodiment offers the possibility of tuning the emission wavelength directly by the user, while preserving the precision and stability over time properties.
The embodiments described so far have made reference to an HDBR laser, including an active optical device such as a laser diode.
The present invention is not limited to this kind of application, being instead in general applicable to optical devices including a Bragg grating whose wavelength are tuned and made stable.
For example, in
The packaging of the optical device 400 can proceed as described in connection with the second embodiment; in order to monitor the optical device emission wavelength, an external optical source 405 may be used in place of the laser 105 of the previous embodiments.
The provision of the thermally-conductive cap 150 aids in maintaining the thermal stability of the Bragg grating.
The optical device 400 can, for example, be used in an optical receiver 500, schematically depicted in terms of functional blocks in
Although the present invention has been disclosed and described by way of some embodiments, it is apparent to those skilled in the art that several modifications to the described embodiments, as well as other embodiments of the present invention are possible without departing from the spirit and scope thereof.
Number | Date | Country | Kind |
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EP04103032.1 | Jun 2004 | EP | regional |