Claims
- 1. A sensor material for measuring static and dynamic physical parameters, comprising:
a matrix made of an electrically insulating ceramic material; and piezoresistance materials which are dispersed in said matrix so as to be electrically continuous to each other.
- 2. A sensor material according to claim 1, wherein said piezoresistance material has a piezoresistance at a certain temperature within the temperature range of at least −50 to 200° C.
- 3. A sensor material according to claim 1, wherein the pressure resistivity variation rate of said piezoresistance material is 0.001%/MPa or more.
- 4. A sensor material according to claim 1, wherein the relative density of said sensor material is 90% or more.
- 5. A sensor material according to claim 1, wherein the resistivity of said sensor material is 0.1 Ωcm to 10 kΩcm.
- 6. A sensor material according to claim 1, wherein the bending strength of said electrically insulating ceramic material is 200 MPa or more.
- 7. A sensor material according to claim 1, wherein said piezoresistance material is made of at least one member selected from the group consisting of (Ln1−xMax)1−yMbO3−z with a perovskite structure (where, 0<x≦0.5, 0≦y≦0.2, 0≦z≦0.6, Ln: rare earth element, Ma: at least one alkali earth element, Mb: at least one transition-metal element), (Ln2−uMa1+u)1−vMb2O7−w with a layered perovskite structure (where, 0<u≦1.0, 0≦v≦0.2, 0≦w≦1.0, Ln: rare earth element, Ma: at least one alkali earth element, Mb: at least one transition-metal element), Si and a substance obtained by adding a small amount of additive elements thereto.
- 8. A sensor material according to claim 1, wherein said electrically insulating ceramic material is made of at least one member selected from the group consisting of ZrO2, Al2O3, MgAl2O4, SiO2, 3Al2O3.2SiO2, Y2O3, CeO2, La2O3, Si3N4 and solid solution thereof.
- 9. A sensor material according to claim 1, wherein an amount of said piezoresistance material is 5 to 95% by weight relevant to a total amount of a sensor material.
- 10. A sensor material according to claim 1, wherein said electrically insulating ceramic material is ZrO2 or ZrO2 which CeO2, Y2O3, CaO, or MgO is added to, and said piezoresistance material is composed of Ln1−xMaxMbO3−z with a perovskite structure (where, 0<x≦0.5, 0≦z≦0.6, Ln: rare earth element, Ma: at least one alkali earth element, Mb: at least one transition-metal element).
- 11. A sensor material according to claim 1, wherein said electrically insulating ceramic material is ZrO2 or ZrO2 which CeO2, Y2O3, CaO, or MgO is added to, and said piezoresistance material is made of (Ln1−xMax)1−yMbO3−z with a perovskite structure (where, 0<x≦0.5, 0≦y≦0.2, 0≦z≦0.6, Ln: rare earth element, Ma: at least one alkali earth element, Mb: at least one transition-metal element).
- 12. A sensor material according to claim 1, wherein said electronically insulating ceramic material is made Of Si3N4, and said piezoresistance material is made of Si.
- 13. A sensor material according to claim 1, wherein said electrically insulating ceramic material is made of Al2O3, and said piezoresistance material is made of (Ln1−xMax)1−yMbO3−z with a perovskite structure (where, 0<x≦0.5, 0≦y≦0.2, 0≦x≦0.6, Ln: rare earth element, Ma: at least one alkali earth elements, Mb: at least one transition-metal element).
Priority Claims (1)
Number |
Date |
Country |
Kind |
2000/051120 |
Feb 2000 |
JP |
|
CROSS-REFERENCES TO RELATED APPLICATIONS
[0001] The present application claims priority under 35 U.S.C. § 119 to Japanese Patent Application No. 2000-051120, filed Feb. 28, 2000, entitled “MATERIAL FOR MEASURING STATIC AND DYNAMIC PHYSICAL PARAMETERS”. The contents of this application are incorporated herein by reference in their entirety.