MATERIALS FOR ELECTRONIC DEVICES

Abstract
The present application relates to a spirobifluorene derivative of a specific formula (I) which is suitable for use in electronic devices.
Description

The present application relates to a spirobifluorene derivative of a formula (I) defined hereinafter which is suitable for use in electronic devices, especially organic electroluminescent devices (OLEDs).


Electronic devices in the context of this application are understood to mean what are called organic electronic devices, which contain organic semiconductor materials as functional materials. More particularly, these are understood to mean OLEDs.


The construction of OLEDs in which organic compounds are used as functional materials is common knowledge in the prior art. In general, the term OLEDs is understood to mean electronic devices which have one or more layers comprising organic compounds and emit light on application of electrical voltage.


In electronic devices, especially OLEDs, there is great interest in improving the performance data, especially lifetime, efficiency and operating voltage.


In these aspects, it has not yet been possible to find any entirely satisfactory solution. Furthermore, for use in electronic devices, there is interest in finding functional materials which have excellent material properties, in particular a low sublimation temperature, because this facilitates the preparation of the devices by vapour deposition techniques.


A great influence on the performance data of electronic devices is possessed by layers having a hole-transporting function, for example hole-injecting layers, hole transport layers, electron blocking layers and also emitting layers. For use in these layers, there is a continuous search for new materials having hole-transporting properties.


In the context of studies of novel materials for use in OLEDs, it is found that spirobifluorene compounds which are substituted with an amino group in the 1-position, and which have in addition at least two further substituent groups on the spirobifluorene, are excellent functional materials for electronic devices. They are particularly useful as materials with a hole transporting function, for example for use in hole transporting layers, electron blocking layers and emitting layers.


When used in electronic devices, in particular in OLEDs, they lead to excellent results in terms of lifetime, operating voltage and quantum efficiency of the devices. The compounds also have one or more properties selected from very good hole-conducting properties, very good electron-blocking properties, high glass transition temperature, high oxidation stability, good solubility, high thermal stability, and low sublimation temperature.


The present application thus provides a compound of formula (I)




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where the following applies to the variables:


ArL is selected from aromatic ring systems having 6 to 30 aromatic ring atoms, which may be substituted by one or more radicals R3, and heteroaromatic ring systems having 5 to 30 aromatic ring atoms, which may be substituted by one or more radicals R3;


Ar1 and Ar2 are, identically or differently, selected from aromatic ring systems having 6 to 30 aromatic ring atoms, which may be substituted by one or more radicals R3, and heteroaromatic ring systems having 5 to 30 aromatic ring atoms, which may be substituted by one or more radicals R3;


E is a single bond or is a divalent group selected from C(R3)2, N(R3), O, and S;


R1 is, identically or differently on each occurrence, selected from F; Cl; Br; I; —CN; —SCN; —NO2; —SF5; alkyl groups; alkoxy groups; thioalkyl groups; alkenyl groups; alkynyl groups; and silyl groups which are substituted with one or more groups selected from groups R4 and alkyl groups, alkoxy groups, thioalkyl groups, alkenyl groups, and alkynyl groups; where the alkyl, alkoxy and thioalkyl groups are selected from straight-chain alkyl, alkoxy and thioalkyl groups having 1 to 20 C atoms, which may be substituted by one or more radicals R4, and branched or cyclic alkyl, alkoxy and thioalkyl groups having 3 to 20 C atoms, which may be substituted by one or more radicals R4; and where the alkenyl groups are selected from alkenyl groups having 2 to 20 C atoms, which may be substituted by one or more radicals R4; and where the alkynyl groups are selected from alkynyl groups having 2 to 20 C atoms, which may be substituted by one or more radicals R4;


R2 is, identically or differently at each occurrence, selected from




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H, D, F, C(═O)R4, CN, Si(R4)3, N(R4)2, P(═O)(R4)2, OR4, S(═O)R4, S(═O)2R4, straight-chain alkyl or alkoxy groups having 1 to 20 C atoms, branched or cyclic alkyl or alkoxy groups having 3 to 20 C atoms, alkenyl or alkynyl groups having 2 to 20 C atoms, aromatic ring systems having 6 to 40 aromatic ring atoms, and heteroaromatic ring systems having 5 to 40 aromatic ring atoms; where two or more radicals R2 may be connected to each other to form a ring; where the said alkyl, alkoxy, alkenyl and alkynyl groups and the said aromatic and heteroaromatic ring systems may in each case be substituted by one or more radicals R4, and where one or more CH2 groups in the said alkyl, alkoxy, alkenyl and alkynyl groups may in each case be replaced by —R4C═CR4—, —C═C—, Si(R4)2, C═O, C═NR4, —C(═O)O—, —C(═O)NR4—, NR4, P(═O)(R4), —O—, —S—, SO or SO2;


R3 is, identically or differently at each occurrence, selected from H, D, F, C(═O)R4, CN, Si(R4)3, N(R4)2, P(═O)(R4)2, OR4, S(═O)R4, S(═O)2R4, straight-chain alkyl or alkoxy groups having 1 to 20 C atoms, branched or cyclic alkyl or alkoxy groups having 3 to 20 C atoms, alkenyl or alkynyl groups having 2 to 20 C atoms, aromatic ring systems having 6 to 40 aromatic ring atoms, and heteroaromatic ring systems having 5 to 40 aromatic ring atoms; where two or more radicals R3 may be connected to each other to form a ring; where the said alkyl, alkoxy, alkenyl and alkynyl groups and the said aromatic and heteroaromatic ring systems may in each case be substituted by one or more radicals R4, and where one or more CH2 groups in the said alkyl, alkoxy, alkenyl and alkynyl groups may in each case be replaced by —R4C═CR4—, —C═C—, Si(R4)2, C═O, C═NR4, —C(═O)O—, —C(═O)NR4—, NR4, P(═O)(R4), —O—, —S—, SO or SO2;


R4 is, identically or differently at each occurrence, selected from H, D, F, C(═O)R5, CN, Si(R5)3, N(R5)2, P(═O)(R5)2, OR5, S(═O)R5, S(═O)2R5, straight-chain alkyl or alkoxy groups having 1 to 20 C atoms, branched or cyclic alkyl or alkoxy groups having 3 to 20 C atoms, alkenyl or alkynyl groups having 2 to 20 C atoms, aromatic ring systems having 6 to 40 aromatic ring atoms, and heteroaromatic ring systems having 5 to 40 aromatic ring atoms; where two or more radicals R4 may be connected to each other to form a ring; where the said alkyl, alkoxy, alkenyl and alkynyl groups and the said aromatic and heteroaromatic ring systems may in each case be substituted by one or more radicals R5, and where one or more CH2 groups in the said alkyl, alkoxy, alkenyl and alkynyl groups may in each case be replaced by —R5C═CR5—, —C═C—, Si(R5)2, C═O, C═NR5, —C(═O)O—, —C(═O)NR5—, NR5, P(═O)(R5), —O—, —S—, SO or SO2;


R5 is selected, identically or differently at each occurrence, from H, D, F, CN, alkyl groups having 1 to 20 C atoms, aromatic ring systems having 6 to 40 C atoms, or heteroaromatic ring systems having 5 to 40 aromatic ring atoms; where two or more radicals R5 may be connected to each other to form a ring; and where the said alkyl groups, aromatic ring systems and heteroaromatic ring systems may be substituted by F and CN;


n is on each occurrence, identically or differently, 0 or 1, where in the case of n=0, the group R1 is not present, and a group R2 is bonded instead in this position; and


k is 0 or 1; where in the case of k=0, the group ArL is not present and the nitrogen atom and the spirobifluorene group are directly connected;


m is 0 or 1, where in the case of m=0, the group E is not present and the groups Ar1 and Ar2 are not connected;


characterized in that at least two indices n in formula (I) are 1.


The following definitions apply to the chemical groups used as general definitions. They only apply insofar as no more specific definitions are given.


An aryl group in the sense of this invention contains 6 to 40 aromatic ring atoms, of which none is a heteroatom. An aryl group here is taken to mean either a simple aromatic ring, for example benzene, or a condensed aromatic polycycle, for example naphthalene, phenanthrene, or anthracene. A condensed aromatic polycycle in the sense of the present application consists of two or more simple aromatic rings condensed with one another.


A heteroaryl group in the sense of this invention contains 5 to 40 aromatic ring atoms, at least one of which is a heteroatom. The heteroatoms are preferably selected from N, O and S. A heteroaryl group here is taken to mean either a simple heteroaromatic ring, such as pyridine, pyrimidine or thiophene, or a condensed heteroaromatic polycycle, such as quinoline or carbazole. A condensed heteroaromatic polycycle in the sense of the present application consists of two or more simple heteroaromatic rings condensed with one another.


An aryl or heteroaryl group, which may in each case be substituted by the above-mentioned radicals and which may be linked to the aromatic or heteroaromatic ring system via any desired positions, is taken to mean, in particular, groups derived from benzene, naphthalene, anthracene, phenanthrene, pyrene, dihydropyrene, chrysene, perylene, fluoranthene, benzanthracene, benzophenanthrene, tetracene, pentacene, benzopyrene, furan, benzofuran, isobenzofuran, dibenzofuran, thiophene, benzothiophene, isobenzothiophene, dibenzothiophene, pyrrole, indole, isoindole, carbazole, pyridine, quinoline, isoquinoline, acridine, phenanthridine, benzo-5,6-quinoline, benzo-6,7-quinoline, benzo-7,8-quinoline, phenothiazine, phenoxazine, pyrazole, indazole, imidazole, benzimidazole, naphthimidazole, phenanthrimidazole, pyridimidazole, pyrazinimidazole, quinoxalinimidazole, oxazole, benzoxazole, naphthoxazole, anthroxazole, phenanthroxazole, isoxazole, 1,2-thiazole, 1,3-thiazole, benzothiazole, pyridazine, benzopyridazine, pyrimidine, benzopyrimidine, quinoxaline, pyrazine, phenazine, naphthyridine, azacarbazole, benzocarboline, phenanthroline, 1,2,3-triazole, 1,2,4-triazole, benzotriazole, 1,2,3-oxadiazole, 1,2,4-oxadiazole, 1,2,5-oxadiazole, 1,3,4-oxadiazole, 1,2,3-thiadiazole, 1,2,4-thiadiazole, 1,2,5-thiadiazole, 1,3,4-thiadiazole, 1,3,5-triazine, 1,2,4-triazine, 1,2,3-triazine, tetrazole, 1,2,4,5-tetrazine, 1,2,3,4-tetrazine, 1,2,3,5-tetrazine, purine, pteridine, indolizine and benzothiadiazole.


An aromatic ring system in the sense of this invention contains 6 to 40 C atoms in the ring system and does not comprise any heteroatoms as aromatic ring atoms. An aromatic ring system in the sense of this application therefore does not comprise any heteroaryl groups. An aromatic ring system in the sense of this invention is intended to be taken to mean a system which does not necessarily contain only aryl groups, but instead in which, in addition, a plurality of aryl groups may be connected by a non-aromatic unit such as one or more optionally substituted C, Si, N, O or S atoms. The non-aromatic unit in such case comprises preferably less than 10% of the atoms other than H, relative to the total number of atoms other than H of the whole aromatic ring system. Thus, for example, systems such as 9,9′-spirobifluorene, 9,9′-diarylfluorene, triarylamine, diaryl ether, and stilbene are also intended to be taken to be aromatic ring systems in the sense of this invention, as are systems in which two or more aryl groups are connected, for example, by a linear or cyclic alkyl, alkenyl or alkynyl group or by a silyl group. Furthermore, systems in which two or more aryl groups are linked to one another via single bonds are also taken to be aromatic ring systems in the sense of this invention, such as, for example, systems such as biphenyl and terphenyl.


Preferably, an aromatic ring system is understood to be a chemical group, in which the aryl groups which constitute the chemical group are conjugated with each other. This means that the aryl groups are connected with each other via single bonds or via connecting units which have a free pi electron pair which can take part in the conjugation. The connecting units are preferably selected from nitrogen atoms, single C═C units, single C═C units, multiple C═C units and/or C═C units which are conjugated with each other, —O—, and —S—.


A heteroaromatic ring system in the sense of this invention contains 5 to 40 aromatic ring atoms, at least one of which is a heteroatom. The heteroatoms are preferably selected from N, O or S. A heteroaromatic ring system is defined as an aromatic ring system above, with the difference that it must obtain at least one heteroatom as one of the aromatic ring atoms. It thereby differs from an aromatic ring system according to the definition of the present application, which cannot comprise any heteroatom as aromatic ring atom.


An aromatic ring system having 6 to 40 aromatic ring atoms or a heteroaromatic ring system having 5 to 40 aromatic ring atoms is in particular a group which is derived from the above mentioned aryl or heteroaryl groups, or from biphenyl, terphenyl, quaterphenyl, fluorene, spirobifluorene, dihydrophenanthrene, dihydropyrene, tetrahydropyrene, indenofluorene, truxene, isotruxene, spirotruxene, spiroisotruxene, and indenocarbazole.


For the purposes of the present invention, a straight-chain alkyl group having 1 to 20 C atoms or a branched or cyclic alkyl group having 3 to 20 C atoms or an alkenyl or alkynyl group having 2 to 20 C atoms, in which, in addition, individual H atoms or CH2 groups may be substituted by the groups mentioned above under the definition of the radicals, is preferably taken to mean the radicals methyl, ethyl, n-propyl, i-propyl, n-butyl, i-butyl, s-butyl, t-butyl, 2-methylbutyl, n-pentyl, s-pentyl, cyclopentyl, neopentyl, n-hexyl, cyclohexyl, neohexyl, n-heptyl, cycloheptyl, n-octyl, cyclooctyl, 2-ethylhexyl, trifluoromethyl, pentafluoroethyl, 2,2,2-trifluoroethyl, ethenyl, propenyl, butenyl, pentenyl, cyclopentenyl, hexenyl, cyclohexenyl, heptenyl, cycloheptenyl, octenyl, cyclooctenyl, ethynyl, propynyl, butynyl, pentynyl, hexynyl or octynyl.


An alkoxy or thioalkyl group having 1 to 20 C atoms is preferably taken to mean methoxy, trifluoromethoxy, ethoxy, n-propoxy, i-propoxy, n-butoxy, i-butoxy, s-butoxy, t-butoxy, n-pentoxy, s-pentoxy, 2-methylbutoxy, n-hexoxy, cyclohexyloxy, n-heptoxy, cycloheptyloxy, n-octyloxy, cyclooctyl-oxy, 2-ethylhexyloxy, pentafluoroethoxy, 2,2,2-trifluoroethoxy, methylthio, ethylthio, n-propylthio, i-propylthio, n-butylthio, i-butylthio, s-butylthio, t-butylthio, n-pentylthio, s-pentylthio, n-hexylthio, cyclohexylthio, n-heptyl-thio, cycloheptylthio, n-octylthio, cyclooctylthio, 2-ethylhexylthio, trifluoro-methylthio, pentafluoroethylthio, 2,2,2-trifluoroethylthio, ethenylthio, propenylthio, butenylthio, pentenylthio, cyclopentenylthio, hexenylthio, cyclohexenylthio, heptenylthio, cycloheptenylthio, octenylthio, cyclooctenyl-thio, ethynylthio, propynylthio, butynylthio, pentynylthio, hexynylthio, heptynylthio or octynylthio.


Preferably, group ArL is selected from aromatic ring systems having 6 to 30 aromatic ring atoms, which may be substituted by one or more radicals R3. It is particularly preferred if ArL is selected from divalent groups derived from benzene, biphenyl, terphenyl, naphthyl, fluorenyl, indenofluorenyl, spirobifluorenyl, dibenzofuranyl, dibenzothiophenyl, and carbazolyl, which may each be substituted by one or more radicals R3.


Preferred groups ArL conform to the following formulae




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where the dotted lines represent the bonds of the divalent group to the rest of the formula (I).


Particularly preferred among the groups above are the groups according to one of formulae ArL-1, ArL-2, ArL-3, ArL-9, ArL-12, ArL-16, ArL-17, ArL-36, ArL-64, and ArL-73.


It is preferred that index k is 0, meaning that the group ArL is not present, so that the spirobifluorene and the nitrogen atom of the amine are directly connected with each other.


Preferably, groups Ar1 and Ar2 are, identically or differently, selected from radicals derived from the following groups, which are each optionally substituted by one or more radicals R3, or from combinations of 2 or 3 radicals derived from the following groups, which are each optionally substituted by one or more radicals R3: phenyl, biphenyl, terphenyl, quaterphenyl, naphthyl, fluorenyl, especially 9,9′-dimethylfluorenyl and 9,9′-diphenylfluorenyl, benzofluorenyl, spirobifluorenyl, indenofluorenyl, dibenzofuranyl, dibenzothiophenyl, carbazolyl, benzofuranyl, benzothiophenyl, indolyl, quinolinyl, pyridyl, pyrimidyl, pyrazinyl, pyridazinyl and triazinyl.


Particularly preferred groups Ar1 and Ar2 are, identically or differently, selected from phenyl, biphenyl, terphenyl, quaterphenyl, naphthyl, fluorenyl, especially 9,9′-dimethylfluorenyl and 9,9′-diphenylfluorenyl, benzofluorenyl, spirobifluorenyl, indenofluorenyl, dibenzofuranyl, dibenzothiophenyl, carbazolyl, benzofuranyl, benzothiophenyl, benzofused dibenzofuranyl, benzofused dibenzothiophenyl, naphthyl-substituted phenyl, fluorenyl-substituted phenyl, spirobifluorenyl-substituted phenyl, dibenzofuranyl-substituted phenyl, dibenzothiophenyl-substituted phenyl, carbazolyl-substituted phenyl, pyridyl-substituted phenyl, pyrimidyl-substituted phenyl, and triazinyl-substituted phenyl, each of which may optionally be substituted by one or more radicals R3.


Preferably, Ar1 and Ar2 are selected differently.


Preferred groups Ar1 and Ar2 are, identically or differently, selected from groups of the following formulae




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where the groups may be substituted at the free positions with groups R3, but are preferably unsubstituted in these positions, and where the dotted line symbolizes the bonding position to the nitrogen atom.


Particularly preferred groups Ar1 and Ar2 conform to the following formulae Ar-1, Ar-2, Ar-3, Ar-4, Ar-5, Ar-64, Ar-74, Ar-78, Ar-82, Ar-89, Ar-117, Ar-134, Ar-139, Ar-141, Ar-150, Ar-172, and Ar-174.


According to a preferred embodiment, groups Ar1 and Ar2 are not connected by a group E, meaning that index m is 0.


According to an alternative embodiment, which may be preferred under certain conditions, groups Ar1 and Ar2 are connected by a group E, meaning that index m is 1.


In the case that groups Ar1 and Ar2 are connected by a group E, it is preferred that groups Ar1 and Ar2 are selected, identically or differently, from phenyl and fluorenyl, each of which may be substituted by one or more groups R3. Furthermore, in such case, it is preferred that the group E which connects the group Ar1 and the group Ar2 is located on the respective group Ar1 and Ar2, preferably on the respective group Ar1 and Ar2 which is phenyl or fluorenyl, in ortho-position to the bond of the group Ar1 and Ar2 to the amine nitrogen atom. Furthermore, preferably, in such case a six-ring with the amine nitrogen atom is formed of the groups Ar1, Ar2 and E if E is selected from C(R3)2, NR3, O and S; and a five-ring is formed if E is a single bond.


In the case that groups Ar1 and Ar2 are connected by a group E, particularly preferred embodiments of the moieties




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are selected from the following formulae




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where the groups may be substituted at the free positions with groups R3, but are preferably unsubstituted in these positions, and where the dotted line symbolizes the bonding position to the nitrogen atom.


It is preferred that the compound according to the present application has 2, 3, or 4 groups R1 bonded to the spirobifluorene, meaning that 2, 3, or 4 indices n are equal to 1, and the rest of the indices n is equal to 0.


It is preferred that the compound according to the present application has not more and not less than 2 groups R1 bonded to the spirobifluorene, meaning that not more and not less than two indices n are equal to 1, and the rest of the indices n is equal to 0.


Furthermore, it is preferred that the compound according to the present application has not more than one radical R1 bonded to each aromatic six-ring of the spirobifluorene.


Groups R1 are preferably selected, identically or differently on each occurrence, from straight-chain alkyl, alkoxy or thioalkyl groups having 1 to 20 C atoms, which may optionally be substituted by one or more groups F, and from branched or cyclic alkyl, alkoxy or thioalkyl groups having 3 to 20 C atoms, which may optionally be substituted by one or more groups F. Particularly preferred are alkyl groups having 1 to 20 C atoms, which may be substituted by one or more groups F, or groups F; most preferred are F, CF3, CH3 and C(CH3)3.


Particularly preferred groups R1 conform to one of the following formulae




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Among these formulae, formulae R1-1, R1-2, R1-5, and R1-18 are preferred.


According to a preferred embodiment, groups R2 are equal to H or




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where not more than one group R2 per formula (I) is equal to




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and the remaining groups R2 are equal to H. Particularly preferably, groups R2 are all H.


Preferably, R3 is, identically or differently on each occurrence, selected from H, D, F, CN, Si(R4)3, N(R4)2, straight-chain alkyl or alkoxy groups having 1 to 20 C atoms, branched or cyclic alkyl or alkoxy groups having 3 to 20 C atoms, alkenyl or alkynyl groups having 2 to 20 C atoms, aromatic ring systems having 6 to 40 aromatic ring atoms, and heteroaromatic ring systems having 5 to 40 aromatic ring atoms; where two or more radicals R3 may be connected to each other to form a ring; and where the said alkyl, alkoxy, alkenyl and alkynyl groups and the said aromatic and heteroaromatic ring systems may in each case be substituted by one or more radicals R4.


Preferably, R4 is, identically or differently on each occurrence, selected from H, D, F, CN, Si(R5)3, N(R5)2, straight-chain alkyl or alkoxy groups having 1 to 20 C atoms, branched or cyclic alkyl or alkoxy groups having 3 to 20 C atoms, alkenyl or alkynyl groups having 2 to 20 C atoms, aromatic ring systems having 6 to 40 aromatic ring atoms, and heteroaromatic ring systems having 5 to 40 aromatic ring atoms; where two or more radicals R4 may be connected to each other to form a ring; and where the said alkyl, alkoxy, alkenyl and alkynyl groups and the said aromatic and heteroaromatic ring systems may in each case be substituted by one or more radicals R5.


According to a preferred embodiment, the compound of formula (I) conforms to one of formulae (IA) and (IB),




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where the variables are defined as above, and where a group R2 may be bonded to each free position on the spirobifluorene.


Among formulae (IA) and (IB), formula (IA) is preferred.


It is preferred that the compound according to formula (I) conforms to one of formulae (I-A-1) to (I-A-9) and (I-B-1) to (I-B-9), particularly preferably to one of formulae (I-A-1), (I-A-2), (I-B-1) and (I-B-2), most preferably to one of formulae (I-A-1) and (I-B-1)




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where the variables are defined as above, and where the free positions on the spirobifluorene may be substituted with a group R2 at each occasion, and are preferably unsubstituted.


Preferred embodiments of compounds according to formula (I) are the compounds given in the following list, where the basic structure conforms to the formula given in the second column, group Art if present has the structure given in the third column, groups R1 conform to the formula given in the fourth column, and groups Ar1 and Ar2 conform to the formulae given in the fifth and sixth column, respectively.


















Basic






No.
structure
ArL
R1
Ar1
Ar2







C-1
(I-A-1)
n.a.
R-1
Ar-1
Ar-1


C-2




Ar-2


C-3




Ar-3


C-4




Ar-4


C-5




Ar-5


C-6




Ar-64


C-7




Ar-74


C-8




Ar-78


C-9




Ar-82


C-10




Ar-89


C-11




Ar-117


C-12




Ar-134


C-13




Ar-139


C-14




Ar-141


C-15




Ar-150


C-16




Ar-172


C-17




Ar-174


C-18



Ar-2
Ar-2


C-19




Ar-3


C-20




Ar-4


C-21




Ar-5


C-22




Ar-64


C-23




Ar-74


C-24




Ar-78


C-25




Ar-82


C-26




Ar-89


C-27




Ar-117


C-28




Ar-134


C-29




Ar-139


C-30




Ar-141


C-31




Ar-150


C-32




Ar-172


C-33




Ar-174


C-34



Ar-3
Ar-3


C-35




Ar-4


C-36




Ar-5


C-37




Ar-64


C-38




Ar-74


C-39




Ar-78


C-40




Ar-82


C-41




Ar-89


C-42




Ar-117


C-43




Ar-134


C-44




Ar-139


C-45




Ar-141


C-46




Ar-150


C-47




Ar-172


C-48




Ar-174


C-49



Ar-4
Ar-4


C-50




Ar-5


C-51




Ar-64


C-52




Ar-74


C-53




Ar-78


C-54




Ar-82


C-55




Ar-89


C-56




Ar-117


C-57




Ar-134


C-58




Ar-139


C-59




Ar-141


C-60




Ar-150


C-61




Ar-172


C-62




Ar-174


C-63



Ar-5
Ar-5


C-64




Ar-64


C-65




Ar-74


C-66




Ar-78


C-67




Ar-82


C-68




Ar-89


C-69




Ar-117


C-70




Ar-134


C-71




Ar-139


C-72




Ar-141


C-73




Ar-150


C-74




Ar-172


C-75




Ar-174


C-76



Ar-64
Ar-64


C-77




Ar-74


C-78




Ar-78


C-79




Ar-82


C-80




Ar-89


C-81




Ar-117


C-82




Ar-134


C-83




Ar-139


C-84




Ar-141


C-85




Ar-150


C-86




Ar-172


C-87




Ar-174


C-88



Ar-74
Ar-74


C-89




Ar-78


C-90




Ar-82


C-91




Ar-89


C-92




Ar-117


C-93




Ar-134


C-94




Ar-139


C-95




Ar-141


C-96




Ar-150


C-97




Ar-172


C-98




Ar-174


C-99



Ar-78
Ar-78


C-100




Ar-82


C-101




Ar-89


C-102




Ar-117


C-103




Ar-134


C-104




Ar-139


C-105




Ar-141


C-106




Ar-150


C-107




Ar-172


C-108




Ar-174


C-109



Ar-82
Ar-82


C-110




Ar-89


C-111




Ar-117


C-112




Ar-134


C-113




Ar-139


C-114




Ar-141


C-115




Ar-150


C-116




Ar-172


C-117




Ar-174


C-118



Ar-89
Ar-89


C-119




Ar-117


C-120




Ar-134


C-121




Ar-139


C-122




Ar-141


C-123




Ar-150


C-124




Ar-172


C-125




Ar-174


C-126



Ar-117
Ar-117


C-127




Ar-134


C-128




Ar-139


C-129




Ar-141


C-130




Ar-150


C-131




Ar-172


C-132




Ar-174


C-133



Ar-134
Ar-134


C-134




Ar-139


C-135




Ar-141


C-136




Ar-150


C-137




Ar-172


C-138




Ar-174


C-139



Ar-139
Ar-139


C-140




Ar-141


C-141




Ar-150


C-142




Ar-172


C-143




Ar-174


C-144



Ar-141
Ar-141


C-145




Ar-150


C-146




Ar-172


C-147




Ar-174


C-148



Ar-150
Ar-150


C-149




Ar-172


C-150




Ar-174


C-151



Ar-172
Ar-172


C-152




Ar-174


C-153



Ar-174
Ar-174


C-154


R-2
Ar-1
Ar-1


C-155




Ar-2


C-156




Ar-3


C-157




Ar-4


C-158




Ar-5


C-159




Ar-64


C-160




Ar-74


C-161




Ar-78


C-162




Ar-82


C-163




Ar-89


C-164




Ar-117


C-165




Ar-134


C-166




Ar-139


C-167




Ar-141


C-168




Ar-150


C-169




Ar-172


C-170




Ar-174


C-171



Ar-2
Ar-2


C-172




Ar-3


C-173




Ar-4


C-174




Ar-5


C-175




Ar-64


C-176




Ar-74


C-177




Ar-78


C-178




Ar-82


C-179




Ar-89


C-180




Ar-117


C-181




Ar-134


C-182




Ar-139


C-183




Ar-141


C-184




Ar-150


C-185




Ar-172


C-186




Ar-174


C-187



Ar-3
Ar-3


C-188




Ar-4


C-189




Ar-5


C-190




Ar-64


C-191




Ar-74


C-192




Ar-78


C-193




Ar-82


C-194




Ar-89


C-195




Ar-117


C-196




Ar-134


C-197




Ar-139


C-198




Ar-141


C-199




Ar-150


C-200




Ar-172


C-201




Ar-174


C-202



Ar-4
Ar-4


C-203




Ar-5


C-204




Ar-64


C-205




Ar-74


C-206




Ar-78


C-207




Ar-82


C-208




Ar-89


C-209




Ar-117


C-210




Ar-134


C-211




Ar-139


C-212




Ar-141


C-213




Ar-150


C-214




Ar-172


C-215




Ar-174


C-216



Ar-5
Ar-5


C-217




Ar-64


C-218




Ar-74


C-219




Ar-78


C-220




Ar-82


C-221




Ar-89


C-222




Ar-117


C-223




Ar-134


C-224




Ar-139


C-225




Ar-141


C-226




Ar-150


C-227




Ar-172


C-228




Ar-174


C-229



Ar-64
Ar-64


C-230




Ar-74


C-231




Ar-78


C-232




Ar-82


C-233




Ar-89


C-234




Ar-117


C-235




Ar-134


C-236




Ar-139


C-237




Ar-141


C-238




Ar-150


C-239




Ar-172


C-240




Ar-174


C-241



Ar-74
Ar-74


C-242




Ar-78


C-243




Ar-82


C-244




Ar-89


C-245




Ar-117


C-246




Ar-134


C-247




Ar-139


C-248




Ar-141


C-249




Ar-150


C-250




Ar-172


C-251




Ar-174


C-252



Ar-78
Ar-78


C-253




Ar-82


C-254




Ar-89


C-255




Ar-117


C-256




Ar-134


C-257




Ar-139


C-258




Ar-141


C-259




Ar-150


C-260




Ar-172


C-261




Ar-174


C-262



Ar-82
Ar-82


C-263




Ar-89


C-264




Ar-117


C-265




Ar-134


C-266




Ar-139


C-267




Ar-141


C-268




Ar-150


C-269




Ar-172


C-270




Ar-174


C-271



Ar-89
Ar-89


C-272




Ar-117


C-273




Ar-134


C-274




Ar-139


C-275




Ar-141


C-276




Ar-150


C-277




Ar-172


C-278




Ar-174


C-279



Ar-117
Ar-117


C-280




Ar-134


C-281




Ar-139


C-282




Ar-141


C-283




Ar-150


C-284




Ar-172


C-285




Ar-174


C-286



Ar-134
Ar-134


C-287




Ar-139


C-288




Ar-141


C-289




Ar-150


C-290




Ar-172


C-291




Ar-174


C-292



Ar-139
Ar-139


C-293




Ar-141


C-294




Ar-150


C-295




Ar-172


C-296




Ar-174


C-297



Ar-141
Ar-141


C-298




Ar-150


C-299




Ar-172


C-300




Ar-174


C-301



Ar-150
Ar-150


C-302




Ar-172


C-303




Ar-174


C-304



Ar-172
Ar-172


C-305




Ar-174


C-306



Ar-174
Ar-174


C-307


R-5
Ar-1
Ar-1


C-308




Ar-2


C-309




Ar-3


C-310




Ar-4


C-311




Ar-5


C-312




Ar-64


C-313




Ar-74


C-314




Ar-78


C-315




Ar-82


C-316




Ar-89


C-317




Ar-117


C-318




Ar-134


C-319




Ar-139


C-320




Ar-141


C-321




Ar-150


C-322




Ar-172


C-323




Ar-174


C-324



Ar-2
Ar-2


C-325




Ar-3


C-326




Ar-4


C-327




Ar-5


C-328




Ar-64


C-329




Ar-74


C-330




Ar-78


C-331




Ar-82


C-332




Ar-89


C-333




Ar-117


C-334




Ar-134


C-335




Ar-139


C-336




Ar-141


C-337




Ar-150


C-338




Ar-172


C-339




Ar-174


C-340



Ar-3
Ar-3


C-341




Ar-4


C-342




Ar-5


C-343




Ar-64


C-344




Ar-74


C-345




Ar-78


C-346




Ar-82


C-347




Ar-89


C-348




Ar-117


C-349




Ar-134


C-350




Ar-139


C-351




Ar-141


C-352




Ar-150


C-353




Ar-172


C-354




Ar-174


C-355



Ar-4
Ar-4


C-356




Ar-5


C-357




Ar-64


C-358




Ar-74


C-359




Ar-78


C-360




Ar-82


C-361




Ar-89


C-362




Ar-117


C-363




Ar-134


C-364




Ar-139


C-365




Ar-141


C-366




Ar-150


C-367




Ar-172


C-368




Ar-174


C-369



Ar-5
Ar-5


C-370




Ar-64


C-371




Ar-74


C-372




Ar-78


C-373




Ar-82


C-374




Ar-89


C-375




Ar-117


C-376




Ar-134


C-377




Ar-139


C-378




Ar-141


C-379




Ar-150


C-380




Ar-172


C-381




Ar-174


C-382



Ar-64
Ar-64


C-383




Ar-74


C-384




Ar-78


C-385




Ar-82


C-386




Ar-89


C-387




Ar-117


C-388




Ar-134


C-389




Ar-139


C-390




Ar-141


C-391




Ar-150


C-392




Ar-172


C-393




Ar-174


C-394



Ar-74
Ar-74


C-395




Ar-78


C-396




Ar-82


C-397




Ar-89


C-398




Ar-117


C-399




Ar-134


C-400




Ar-139


C-401




Ar-141


C-402




Ar-150


C-403




Ar-172


C-404




Ar-174


C-405



Ar-78
Ar-78


C-406




Ar-82


C-407




Ar-89


C-408




Ar-117


C-409




Ar-134


C-410




Ar-139


C-411




Ar-141


C-412




Ar-150


C-413




Ar-172


C-414




Ar-174


C-415



Ar-82
Ar-82


C-416




Ar-89


C-417




Ar-117


C-418




Ar-134


C-419




Ar-139


C-420




Ar-141


C-421




Ar-150


C-422




Ar-172


C-423




Ar-174


C-424



Ar-89
Ar-89


C-425




Ar-117


C-426




Ar-134


C-427




Ar-139


C-428




Ar-141


C-429




Ar-150


C-430




Ar-172


C-431




Ar-174


C-432



Ar-117
Ar-117


C-433




Ar-134


C-434




Ar-139


C-435




Ar-141


C-436




Ar-150


C-437




Ar-172


C-438




Ar-174


C-439



Ar-134
Ar-134


C-440




Ar-139


C-441




Ar-141


C-442




Ar-150


C-443




Ar-172


C-444




Ar-174


C-445



Ar-139
Ar-139


C-446




Ar-141


C-447




Ar-150


C-448




Ar-172


C-449




Ar-174


C-450



Ar-141
Ar-141


C-451




Ar-150


C-452




Ar-172


C-453




Ar-174


C-454



Ar-150
Ar-150


C-455




Ar-172


C-456




Ar-174


C-457



Ar-172
Ar-172


C-458




Ar-174


C-459



Ar-174
Ar-174


C-460


R-18
Ar-1
Ar-1


C-461




Ar-2


C-462




Ar-3


C-463




Ar-4


C-464




Ar-5


C-465




Ar-64


C-466




Ar-74


C-467




Ar-78


C-468




Ar-82


C-469




Ar-89


C-470




Ar-117


C-471




Ar-134


C-472




Ar-139


C-473




Ar-141


C-474




Ar-150


C-475




Ar-172


C-476




Ar-174


C-477



Ar-2
Ar-2


C-478




Ar-3


C-479




Ar-4


C-480




Ar-5


C-481




Ar-64


C-482




Ar-74


C-483




Ar-78


C-484




Ar-82


C-485




Ar-89


C-486




Ar-117


C-487




Ar-134


C-488




Ar-139


C-489




Ar-141


C-490




Ar-150


C-491




Ar-172


C-492




Ar-174


C-493



Ar-3
Ar-3


C-494




Ar-4


C-495




Ar-5


C-496




Ar-64


C-497




Ar-74


C-498




Ar-78


C-499




Ar-82


C-500




Ar-89


C-501




Ar-117


C-502




Ar-134


C-503




Ar-139


C-504




Ar-141


C-505




Ar-150


C-506




Ar-172


C-507




Ar-174


C-508



Ar-4
Ar-4


C-509




Ar-5


C-510




Ar-64


C-511




Ar-74


C-512




Ar-78


C-513




Ar-82


C-514




Ar-89


C-515




Ar-117


C-516




Ar-134


C-517




Ar-139


C-518




Ar-141


C-519




Ar-150


C-520




Ar-172


C-521




Ar-174


C-522



Ar-5
Ar-5


C-523




Ar-64


C-524




Ar-74


C-525




Ar-78


C-526




Ar-82


C-527




Ar-89


C-528




Ar-117


C-529




Ar-134


C-530




Ar-139


C-531




Ar-141


C-532




Ar-150


C-533




Ar-172


C-534




Ar-174


C-535



Ar-64
Ar-64


C-536




Ar-74


C-537




Ar-78


C-538




Ar-82


C-539




Ar-89


C-540




Ar-117


C-541




Ar-134


C-542




Ar-139


C-543




Ar-141


C-544




Ar-150


C-545




Ar-172


C-546




Ar-174


C-547



Ar-74
Ar-74


C-548




Ar-78


C-549




Ar-82


C-550




Ar-89


C-551




Ar-117


C-552




Ar-134


C-553




Ar-139


C-554




Ar-141


C-555




Ar-150


C-556




Ar-172


C-557




Ar-174


C-558



Ar-78
Ar-78


C-559




Ar-82


C-560




Ar-89


C-561




Ar-117


C-562




Ar-134


C-563




Ar-139


C-564




Ar-141


C-565




Ar-150


C-566




Ar-172


C-567




Ar-174


C-568



Ar-82
Ar-82


C-569




Ar-89


C-570




Ar-117


C-571




Ar-134


C-572




Ar-139


C-573




Ar-141


C-574




Ar-150


C-575




Ar-172


C-576




Ar-174


C-577



Ar-89
Ar-89


C-578




Ar-117


C-579




Ar-134


C-580




Ar-139


C-581




Ar-141


C-582




Ar-150


C-583




Ar-172


C-584




Ar-174


C-585



Ar-117
Ar-117


C-586




Ar-134


C-587




Ar-139


C-588




Ar-141


C-589




Ar-150


C-590




Ar-172


C-591




Ar-174


C-592



Ar-134
Ar-134


C-593




Ar-139


C-594




Ar-141


C-595




Ar-150


C-596




Ar-172


C-597




Ar-174


C-598



Ar-139
Ar-139


C-599




Ar-141


C-600




Ar-150


C-601




Ar-172


C-602




Ar-174


C-603



Ar-141
Ar-141


C-604




Ar-150


C-605




Ar-172


C-606




Ar-174


C-607



Ar-150
Ar-150


C-608




Ar-172


C-609




Ar-174


C-610



Ar-172
Ar-172


C-611




Ar-174


C-612



Ar-174
Ar-174


C-613
(I-B-1)
1,4-phenylene
R-1
Ar-1
Ar-1


C-614




Ar-2


C-615




Ar-3


C-616




Ar-4


C-617




Ar-5


C-618




Ar-64


C-619




Ar-74


C-620




Ar-78


C-621




Ar-82


C-622




Ar-89


C-623




Ar-117


C-624




Ar-134


C-625




Ar-139


C-626




Ar-141


C-627




Ar-150


C-628




Ar-172


C-629




Ar-174


C-630



Ar-2
Ar-2


C-631




Ar-3


C-632




Ar-4


C-633




Ar-5


C-634




Ar-64


C-635




Ar-74


C-636




Ar-78


C-637




Ar-82


C-638




Ar-89


C-639




Ar-117


C-640




Ar-134


C-641




Ar-139


C-642




Ar-141


C-643




Ar-150


C-644




Ar-172


C-645




Ar-174


C-646



Ar-3
Ar-3


C-647




Ar-4


C-648




Ar-5


C-649




Ar-64


C-650




Ar-74


C-651




Ar-78


C-652




Ar-82


C-653




Ar-89


C-654




Ar-117


C-655




Ar-134


C-656




Ar-139


C-657




Ar-141


C-658




Ar-150


C-659




Ar-172


C-660




Ar-174


C-661



Ar-4
Ar-4


C-662




Ar-5


C-663




Ar-64


C-664




Ar-74


C-665




Ar-78


C-666




Ar-82


C-667




Ar-89


C-668




Ar-117


C-669




Ar-134


C-670




Ar-139


C-671




Ar-141


C-672




Ar-150


C-673




Ar-172


C-674




Ar-174


C-675



Ar-5
Ar-5


C-676




Ar-64


C-677




Ar-74


C-678




Ar-78


C-679




Ar-82


C-680




Ar-89


C-681




Ar-117


C-682




Ar-134


C-683




Ar-139


C-684




Ar-141


C-685




Ar-150


C-686




Ar-172


C-687




Ar-174


C-688



Ar-64
Ar-64


C-689




Ar-74


C-690




Ar-78


C-691




Ar-82


C-692




Ar-89


C-693




Ar-117


C-694




Ar-134


C-695




Ar-139


C-696




Ar-141


C-697




Ar-150


C-698




Ar-172


C-699




Ar-174


C-700



Ar-74
Ar-74


C-701




Ar-78


C-702




Ar-82


C-703




Ar-89


C-704




Ar-117


C-705




Ar-134


C-706




Ar-139


C-707




Ar-141


C-708




Ar-150


C-709




Ar-172


C-710




Ar-174


C-711



Ar-78
Ar-78


C-712




Ar-82


C-713




Ar-89


C-714




Ar-117


C-715




Ar-134


C-716




Ar-139


C-717




Ar-141


C-718




Ar-150


C-719




Ar-172


C-720




Ar-174


C-721



Ar-82
Ar-82


C-722




Ar-89


C-723




Ar-117


C-724




Ar-134


C-725




Ar-139


C-726




Ar-141


C-727




Ar-150


C-728




Ar-172


C-729




Ar-174


C-730



Ar-89
Ar-89


C-731




Ar-117


C-732




Ar-134


C-733




Ar-139


C-734




Ar-141


C-735




Ar-150


C-736




Ar-172


C-737




Ar-174


C-738



Ar-117
Ar-117


C-739




Ar-134


C-740




Ar-139


C-741




Ar-141


C-742




Ar-150


C-743




Ar-172


C-744




Ar-174


C-745



Ar-134
Ar-134


C-746




Ar-139


C-747




Ar-141


C-748




Ar-150


C-749




Ar-172


C-750




Ar-174


C-751



Ar-139
Ar-139


C-752




Ar-141


C-753




Ar-150


C-754




Ar-172


C-755




Ar-174


C-756



Ar-141
Ar-141


C-757




Ar-150


C-758




Ar-172


C-759




Ar-174


C-760



Ar-150
Ar-150


C-761




Ar-172


C-762




Ar-174


C-763



Ar-172
Ar-172


C-764




Ar-174


C-765



Ar-174
Ar-174


C-766


R-2
Ar-1
Ar-1


C-767




Ar-2


C-768




Ar-3


C-769




Ar-4


C-770




Ar-5


C-771




Ar-64


C-772




Ar-74


C-773




Ar-78


C-774




Ar-82


C-775




Ar-89


C-776




Ar-117


C-777




Ar-134


C-778




Ar-139


C-779




Ar-141


C-780




Ar-150


C-781




Ar-172


C-782




Ar-174


C-783



Ar-2
Ar-2


C-784




Ar-3


C-785




Ar-4


C-786




Ar-5


C-787




Ar-64


C-788




Ar-74


C-789




Ar-78


C-790




Ar-82


C-791




Ar-89


C-792




Ar-117


C-793




Ar-134


C-794




Ar-139


C-795




Ar-141


C-796




Ar-150


C-797




Ar-172


C-798




Ar-174


C-799



Ar-3
Ar-3


C-800




Ar-4


C-801




Ar-5


C-802




Ar-64


C-803




Ar-74


C-804




Ar-78


C-805




Ar-82


C-806




Ar-89


C-807




Ar-117


C-808




Ar-134


C-809




Ar-139


C-810




Ar-141


C-811




Ar-150


C-812




Ar-172


C-813




Ar-174


C-814



Ar-4
Ar-4


C-815




Ar-5


C-816




Ar-64


C-817




Ar-74


C-818




Ar-78


C-819




Ar-82


C-820




Ar-89


C-821




Ar-117


C-822




Ar-134


C-823




Ar-139


C-824




Ar-141


C-825




Ar-150


C-826




Ar-172


C-827




Ar-174


C-828



Ar-5
Ar-5


C-829




Ar-64


C-830




Ar-74


C-831




Ar-78


C-832




Ar-82


C-833




Ar-89


C-834




Ar-117


C-835




Ar-134


C-836




Ar-139


C-837




Ar-141


C-838




Ar-150


C-839




Ar-172


C-840




Ar-174


C-841



Ar-64
Ar-64


C-842




Ar-74


C-843




Ar-78


C-844




Ar-82


C-845




Ar-89


C-846




Ar-117


C-847




Ar-134


C-848




Ar-139


C-849




Ar-141


C-850




Ar-150


C-851




Ar-172


C-852




Ar-174


C-853



Ar-74
Ar-74


C-854




Ar-78


C-855




Ar-82


C-856




Ar-89


C-857




Ar-117


C-858




Ar-134


C-859




Ar-139


C-860




Ar-141


C-861




Ar-150


C-862




Ar-172


C-863




Ar-174


C-864



Ar-78
Ar-78


C-865




Ar-82


C-866




Ar-89


C-867




Ar-117


C-868




Ar-134


C-869




Ar-139


C-870




Ar-141


C-871




Ar-150


C-872




Ar-172


C-873




Ar-174


C-874



Ar-82
Ar-82


C-875




Ar-89


C-876




Ar-117


C-877




Ar-134


C-878




Ar-139


C-879




Ar-141


C-880




Ar-150


C-881




Ar-172


C-882




Ar-174


C-883



Ar-89
Ar-89


C-884




Ar-117


C-885




Ar-134


C-886




Ar-139


C-887




Ar-141


C-888




Ar-150


C-889




Ar-172


C-890




Ar-174


C-891



Ar-117
Ar-117


C-892




Ar-134


C-893




Ar-139


C-894




Ar-141


C-895




Ar-150


C-896




Ar-172


C-897




Ar-174


C-898



Ar-134
Ar-134


C-899




Ar-139


C-900




Ar-141


C-901




Ar-150


C-902




Ar-172


C-903




Ar-174


C-904



Ar-139
Ar-139


C-905




Ar-141


C-906




Ar-150


C-907




Ar-172


C-908




Ar-174


C-909



Ar-141
Ar-141


C-910




Ar-150


C-911




Ar-172


C-912




Ar-174


C-913



Ar-150
Ar-150


C-914




Ar-172


C-915




Ar-174


C-916



Ar-172
Ar-172


C-917




Ar-174


C-918



Ar-174
Ar-174


C-919


R-5
Ar-1
Ar-1


C-920




Ar-2


C-921




Ar-3


C-922




Ar-4


C-923




Ar-5


C-924




Ar-64


C-925




Ar-74


C-926




Ar-78


C-927




Ar-82


C-928




Ar-89


C-929




Ar-117


C-930




Ar-134


C-931




Ar-139


C-932




Ar-141


C-933




Ar-150


C-934




Ar-172


C-935




Ar-174


C-936



Ar-2
Ar-2


C-937




Ar-3


C-938




Ar-4


C-939




Ar-5


C-940




Ar-64


C-941




Ar-74


C-942




Ar-78


C-943




Ar-82


C-944




Ar-89


C-945




Ar-117


C-946




Ar-134


C-947




Ar-139


C-948




Ar-141


C-949




Ar-150


C-950




Ar-172


C-951




Ar-174


C-952



Ar-3
Ar-3


C-953




Ar-4


C-954




Ar-5


C-955




Ar-64


C-956




Ar-74


C-957




Ar-78


C-958




Ar-82


C-959




Ar-89


C-960




Ar-117


C-961




Ar-134


C-962




Ar-139


C-963




Ar-141


C-964




Ar-150


C-965




Ar-172


C-966




Ar-174


C-967



Ar-4
Ar-4


C-968




Ar-5


C-969




Ar-64


C-970




Ar-74


C-971




Ar-78


C-972




Ar-82


C-973




Ar-89


C-974




Ar-117


C-975




Ar-134


C-976




Ar-139


C-977




Ar-141


C-978




Ar-150


C-979




Ar-172


C-980




Ar-174


C-981



Ar-5
Ar-5


C-982




Ar-64


C-983




Ar-74


C-984




Ar-78


C-985




Ar-82


C-986




Ar-89


C-987




Ar-117


C-988




Ar-134


C-989




Ar-139


C-990




Ar-141


C-991




Ar-150


C-992




Ar-172


C-993




Ar-174


C-994



Ar-64
Ar-64


C-995




Ar-74


C-996




Ar-78


C-997




Ar-82


C-998




Ar-89


C-999




Ar-117


C-1000




Ar-134


C-1001




Ar-139


C-1002




Ar-141


C-1003




Ar-150


C-1004




Ar-172


C-1005




Ar-174


C-1006



Ar-74
Ar-74


C-1007




Ar-78


C-1008




Ar-82


C-1009




Ar-89


C-1010




Ar-117


C-1011




Ar-134


C-1012




Ar-139


C-1013




Ar-141


C-1014




Ar-150


C-1015




Ar-172


C-1016




Ar-174


C-1017



Ar-78
Ar-78


C-1018




Ar-82


C-1019




Ar-89


C-1020




Ar-117


C-1021




Ar-134


C-1022




Ar-139


C-1023




Ar-141


C-1024




Ar-150


C-1025




Ar-172


C-1026




Ar-174


C-1027



Ar-82
Ar-82


C-1028




Ar-89


C-1029




Ar-117


C-1030




Ar-134


C-1031




Ar-139


C-1032




Ar-141


C-1033




Ar-150


C-1034




Ar-172


C-1035




Ar-174


C-1036



Ar-89
Ar-89


C-1037




Ar-117


C-1038




Ar-134


C-1039




Ar-139


C-1040




Ar-141


C-1041




Ar-150


C-1042




Ar-172


C-1043




Ar-174


C-1044



Ar-117
Ar-117


C-1045




Ar-134


C-1046




Ar-139


C-1047




Ar-141


C-1048




Ar-150


C-1049




Ar-172


C-1050




Ar-174


C-1051



Ar-134
Ar-134


C-1052




Ar-139


C-1053




Ar-141


C-1054




Ar-150


C-1055




Ar-172


C-1056




Ar-174


C-1057



Ar-139
Ar-139


C-1058




Ar-141


C-1059




Ar-150


C-1060




Ar-172


C-1061




Ar-174


C-1062



Ar-141
Ar-141


C-1063




Ar-150


C-1064




Ar-172


C-1065




Ar-174


C-1066



Ar-150
Ar-150


C-1067




Ar-172


C-1068




Ar-174


C-1069



Ar-172
Ar-172


C-1070




Ar-174


C-1071



Ar-174
Ar-174


C-1072


R-18
Ar-1
Ar-1


C-1073




Ar-2


C-1074




Ar-3


C-1075




Ar-4


C-1076




Ar-5


C-1077




Ar-64


C-1078




Ar-74


C-1079




Ar-78


C-1080




Ar-82


C-1081




Ar-89


C-1082




Ar-117


C-1083




Ar-134


C-1084




Ar-139


C-1085




Ar-141


C-1086




Ar-150


C-1087




Ar-172


C-1088




Ar-174


C-1089



Ar-2
Ar-2


C-1090




Ar-3


C-1091




Ar-4


C-1092




Ar-5


C-1093




Ar-64


C-1094




Ar-74


C-1095




Ar-78


C-1096




Ar-82


C-1097




Ar-89


C-1098




Ar-117


C-1099




Ar-134


C-1100




Ar-139


C-1101




Ar-141


C-1102




Ar-150


C-1103




Ar-172


C-1104




Ar-174


C-1105



Ar-3
Ar-3


C-1106




Ar-4


C-1107




Ar-5


C-1108




Ar-64


C-1109




Ar-74


C-1110




Ar-78


C-1111




Ar-82


C-1112




Ar-89


C-1113




Ar-117


C-1114




Ar-134


C-1115




Ar-139


C-1116




Ar-141


C-1117




Ar-150


C-1118




Ar-172


C-1119




Ar-174


C-1120



Ar-4
Ar-4


C-1121




Ar-5


C-1122




Ar-64


C-1123




Ar-74


C-1124




Ar-78


C-1125




Ar-82


C-1126




Ar-89


C-1127




Ar-117


C-1128




Ar-134


C-1129




Ar-139


C-1130




Ar-141


C-1131




Ar-150


C-1132




Ar-172


C-1133




Ar-174


C-1134



Ar-5
Ar-5


C-1135




Ar-64


C-1136




Ar-74


C-1137




Ar-78


C-1138




Ar-82


C-1139




Ar-89


C-1140




Ar-117


C-1141




Ar-134


C-1142




Ar-139


C-1143




Ar-141


C-1144




Ar-150


C-1145




Ar-172


C-1146




Ar-174


C-1147



Ar-64
Ar-64


C-1148




Ar-74


C-1149




Ar-78


C-1150




Ar-82


C-1151




Ar-89


C-1152




Ar-117


C-1153




Ar-134


C-1154




Ar-139


C-1155




Ar-141


C-1156




Ar-150


C-1157




Ar-172


C-1158




Ar-174


C-1159



Ar-74
Ar-74


C-1160




Ar-78


C-1161




Ar-82


C-1162




Ar-89


C-1163




Ar-117


C-1164




Ar-134


C-1165




Ar-139


C-1166




Ar-141


C-1167




Ar-150


C-1168




Ar-172


C-1169




Ar-174


C-1170



Ar-78
Ar-78


C-1171




Ar-82


C-1172




Ar-89


C-1173




Ar-117


C-1174




Ar-134


C-1175




Ar-139


C-1176




Ar-141


C-1177




Ar-150


C-1178




Ar-172


C-1179




Ar-174


C-1180



Ar-82
Ar-82


C-1181




Ar-89


C-1182




Ar-117


C-1183




Ar-134


C-1184




Ar-139


C-1185




Ar-141


C-1186




Ar-150


C-1187




Ar-172


C-1188




Ar-174


C-1189



Ar-89
Ar-89


C-1190




Ar-117


C-1191




Ar-134


C-1192




Ar-139


C-1193




Ar-141


C-1194




Ar-150


C-1195




Ar-172


C-1196




Ar-174


C-1197



Ar-117
Ar-117


C-1198




Ar-134


C-1199




Ar-139


C-1200




Ar-141


C-1201




Ar-150


C-1202




Ar-172


C-1203




Ar-174


C-1204



Ar-134
Ar-134


C-1205




Ar-139


C-1206




Ar-141


C-1207




Ar-150


C-1208




Ar-172


C-1209




Ar-174


C-1210



Ar-139
Ar-139


C-1211




Ar-141


C-1212




Ar-150


C-1213




Ar-172


C-1214




Ar-174


C-1215



Ar-141
Ar-141


C-1216




Ar-150


C-1217




Ar-172


C-1218




Ar-174


C-1219



Ar-150
Ar-150


C-1220




Ar-172


C-1221




Ar-174


C-1222



Ar-172
Ar-172


C-1223




Ar-174


C-1224



Ar-174
Ar-174









Further preferred compounds are analogues of the compounds of the above table, which differ in the feature that they have a basic structure according to one of formulae (I-A-2) to (I-A-9) and (I-B-2) to (I-B-9).


Further preferred compounds are analogues of the compounds C-613 to C-1224 of the above table, which differ in the feature that they have instead of a group ArL which is 1,4-phenylene a group ArL which conforms to one of formulae ArL-1, ArL-2, ArL-3, ArL-9, ArL-12, ArL-16, ArL-17, ArL-36, ArL-64, and ArL-73.


Preferred specific compounds according to formula (I) are the following ones:




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The compounds according to the present application are prepared by using standard methods known in the art of organic synthesis, such as metal catalysed coupling reactions, in particular Suzuki reactions and Buchwald reactions, nucleophilic addition reactions of metallated aryl derivatives to carbonyl groups, and acid-catalysed cyclisation reactions.


Preferably, for the synthesis of compounds according to formula (I), a biphenyl derivative which has a reactive group in the position ortho to the phenyl-phenyl bond is metallated, preferably lithiated or subjected to a Grignard reaction (see Scheme 1). The metallated biphenyl derivative is then reacted with a fluorenone derivative, which has a group A in the 1-position. The group A is selected from i) X, or ii) —Ar—X, or iii) —NAr2, or iv) —Ar—NAr2, where Ar is an aromatic or heteroaromatic group, and X is selected from reactive groups, preferably from halogen groups. The resulting addition product is cyclized under acidic conditions, or with a Lewis acid, to a spirobifluorene.




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In the case i) (Group A=X), the resulting spirobifluorene can be further reacted in a Suzuki coupling with an aryl derivative which has two suitable reactive groups, and a subsequent Buchwald coupling with a diaryl amine, to give a spirobifluorene derivative which has an arylene-diarylamine group in its 1-position. As an alternative, the spirobifluorene can be reacted in a Buchwald coupling with a diaryl amine or a NH-carbazole derivative, to give a spirobifluorene derivative which has a diarylamine group or an N-carbazole group in its 1-position. As a still further alternative, the resulting spirobifluorene can be further reacted in a Suzuki coupling with a triarylamine which has a boronic acid derivative.


In the case ii) (Group A=—Ar—X), the resulting spirobifluorene can be further reacted in a Buchwald coupling with a diaryl amine or a NH-carbazole derivative, to give a spirobifluorene derivative which has a diarylamine group or an N-carbazole group in its 1-position.


In the cases iii) and iv), the spirobifluorene which results from the cyclisation reaction is already a compound according to formula (I). In the case iii) (Group A=—NAr2), the fluorenone derivative which is used in the reaction sequence can be obtained from the respective halogen-substituted fluorenone derivative by Buchwald reaction with a diarylamine.


In the case iv) (Group A=—Ar—NAr2), the fluorenone derivative which is used in the reaction sequence can be obtained from the respective halogen-substituted fluorenone derivative by Suzuki coupling with an aryl derivative which has two suitable reactive groups, and a subsequent Buchwald coupling with a diaryl amine.


A further embodiment of the present invention is therefore a process for preparation of a compound according to formula (I), characterized in that it comprises the reactions steps


1) metallation of a biphenyl derivative which has a reactive group in a position which is ortho to the phenyl-phenyl bond;


2) addition of the metallated biphenyl derivative to a fluorenone derivative which has a group A in its 1-position; where the group A is selected from i) X, or ii) —Ar—X, or iii) —NAr2, or iv) —Ar—NAr2, where Ar is aromatic or heteroaromatic group, and where X is a reactive group; and


3) cyclisation of the resulting addition product to a spirobifluorene derivative under acidic conditions or with a Lewis acid.


The metallation of step 1) is preferably a lithiation or a Grignard reaction. Group X is preferably a halogen group, more preferably Cl or Br. Steps 1) to 3) are preferably carried out in their numeric sequence. Furthermore, preferably, step 2) is carried out directly after step 1), and step 3) is carried out directly after step 3). “Directly” means in this regard that no chemical reactions are carried out in between the reaction steps.


The above-described compounds, especially compounds substituted by reactive leaving groups, such as bromine, iodine, chlorine, boronic acid or boronic ester, may find use as monomers for production of corresponding oligomers, dendrimers or polymers. Suitable reactive leaving groups are, for example, bromine, iodine, chlorine, boronic acids, boronic esters, amines, alkenyl or alkynyl groups having a terminal C═C double bond or C—C triple bond, oxiranes, oxetanes, groups which enter into a cycloaddition, for example a 1,3-dipolar cycloaddition, for example dienes or azides, carboxylic acid derivatives, alcohols and silanes.


The invention therefore further provides oligomers, polymers or dendrimers containing one or more compounds of formula (I), wherein the bond(s) to the polymer, oligomer or dendrimer may be localized at any desired positions substituted by R1, R2 or R3 in formula (I). According to the linkage of the compound of formula (I), the compound is part of a side chain of the oligomer or polymer or part of the main chain. An oligomer in the context of this invention is understood to mean a compound formed from at least three monomer units. A polymer in the context of the invention is understood to mean a compound formed from at least ten monomer units. The polymers, oligomers or dendrimers of the invention may be conjugated, partly conjugated or nonconjugated. The oligomers or polymers of the invention may be linear, branched or dendritic. In the structures having linear linkage, the units of formula (I) may be joined directly to one another, or they may be joined to one another via a bivalent group, for example via a substituted or unsubstituted alkylene group, via a heteroatom or via a bivalent aromatic or heteroaromatic group. In branched and dendritic structures, it is possible, for example, for three or more units of formula (I) to be joined via a trivalent or higher-valency group, for example via a trivalent or higher-valency aromatic or heteroaromatic group, to give a branched or dendritic oligomer or polymer.


For the repeat units of formula (I) in oligomers, dendrimers and polymers, the same preferences apply as described above for compounds of formula (I).


For preparation of the oligomers or polymers, the monomers of the invention are homopolymerized or copolymerized with further monomers. Suitable and preferred comonomers are chosen from fluorenes (for example according to EP 842208 or WO 2000/22026), spirobifluorenes (for example according to EP 707020, EP 894107 or WO 2006/061181), paraphenylenes (for example according to WO 1992/18552), carbazoles (for example according to WO 2004/070772 or WO 2004/113468), thiophenes (for example according to EP 1028136), dihydrophenanthrenes (for example according to WO 2005/014689 or WO 2007/006383), cis- and trans-indenofluorenes (for example according to WO 2004/041901 or WO 2004/113412), ketones (for example according to WO 2005/040302), phenanthrenes (for example according to WO 2005/104264 or WO 2007/017066) or else a plurality of these units. The polymers, oligomers and dendrimers typically contain still further units, for example emitting (fluorescent or phosphorescent) units, for example vinyltriarylamines (for example according to WO 2007/068325) or phosphorescent metal complexes (for example according to WO 2006/003000), and/or charge transport units, especially those based on triarylamines.


The polymers and oligomers of the invention are generally prepared by polymerization of one or more monomer types, of which at least one monomer leads to repeat units of the formula (I) in the polymer. Suitable polymerization reactions are known to those skilled in the art and are described in the literature. Particularly suitable and preferred polymerization reactions which lead to formation of C—C or C—N bonds are the Suzuki polymerization, the Yamamoto polymerization, the Stille polymerization and the Hartwig-Buchwald polymerization.


For the processing of the compounds of the invention from a liquid phase, for example by spin-coating or by printing methods, formulations of the compounds of the invention are required. These formulations may, for example, be solutions, dispersions or emulsions. For this purpose, it may be preferable to use mixtures of two or more solvents. Suitable and preferred solvents are, for example, toluene, anisole, o-, m- or p-xylene, methyl benzoate, mesitylene, tetralin, veratrole, THF, methyl-THF, THP, chlorobenzene, dioxane, phenoxytoluene, especially 3-phenoxytoluene, (−)-fenchone, 1,2,3,5-tetramethylbenzene, 1,2,4,5-tetramethylbenzene, 1-methylnaphthalene, 2-methylbenzothiazole, 2-phenoxyethanol, 2-pyrrolidinone, 3-methylanisole, 4-methylanisole, 3,4-dimethylanisole, 3,5-dimethylanisole, acetophenone, a-terpineol, benzothiazole, butyl benzoate, cumene, cyclohexanol, cyclohexanone, cyclohexylbenzene, decalin, dodecylbenzene, ethyl benzoate, indane, methyl benzoate, NMP, p-cymene, phenetole, 1,4-diisopropylbenzene, dibenzyl ether, diethylene glycol butyl methyl ether, triethylene glycol butyl methyl ether, diethylene glycol dibutyl ether, triethylene glycol dimethyl ether, diethylene glycol monobutyl ether, tripropylene glycol dimethyl ether, tetraethylene glycol dimethyl ether, 2-isopropylnaphthalene, pentylbenzene, hexylbenzene, heptylbenzene, octylbenzene, 1,1-bis(3,4-dimethylphenyl)ethane or mixtures of these solvents.


The invention therefore further provides a formulation, especially a solution, dispersion or emulsion, comprising at least one compound of formula (I) and at least one solvent, preferably an organic solvent. The way in which such solutions can be prepared is known to those skilled in the art and is described, for example, in WO 2002/072714, WO 2003/019694 and the literature cited therein.


The compounds of the invention are suitable for use in electronic devices, especially in organic electroluminescent devices (OLEDs). Depending on the substitution, the compounds are used in different functions and layers.


The invention therefore further provides for the use of the compound of formula (I) in an electronic device. This electronic device is preferably selected from the group consisting of organic integrated circuits (OICs), organic field-effect transistors (OFETs), organic thin-film transistors (OTFTs), organic light-emitting transistors (OLETs), organic solar cells (OSCs), organic optical detectors, organic photoreceptors, organic field-quench devices (OFQDs), organic light-emitting electrochemical cells (OLECs), organic laser diodes (O-lasers) and more preferably organic electroluminescent devices (OLEDs).


The invention further provides, as already set out above, an electronic device comprising at least one compound of formula (I). This electronic device is preferably selected from the abovementioned devices.


It is more preferably an organic electroluminescent device (OLED) comprising anode, cathode and at least one emitting layer, characterized in that at least one organic layer, which may be an emitting layer, a hole transport layer or another layer, preferably an emitting layer or a hole transport layer, particularly preferably a hole transport layer, comprises at least one compound of formula (I).


Apart from the cathode, anode and emitting layer, the organic electroluminescent device may also comprise further layers. These are selected, for example, from in each case one or more hole injection layers, hole transport layers, hole blocking layers, electron transport layers, electron injection layers, electron blocking layers, exciton blocking layers, interlayers, charge generation layers (IDMC 2003, Taiwan; Session 21 OLED (5), T. Matsumoto, T. Nakada, J. Endo, K. Mori, N. Kawamura, A. Yokoi, J. Kido, Multiphoton Organic EL Device Having Charge Generation Layer) and/or organic or inorganic p/n junctions.


The sequence of the layers of the organic electroluminescent device comprising the compound of the formula (I) is preferably as follows: anode-hole injection layer-hole transport layer-optionally further hole transport layer(s)-optionally electron blocking layer-emitting layer-optionally hole blocking layer-electron transport layer-electron injection layer-cathode. It is additionally possible for further layers to be present in the OLED.


The organic electroluminescent device of the invention may contain two or more emitting layers. More preferably, these emission layers in this case have several emission maxima between 380 nm and 750 nm overall, such that the overall result is white emission; in other words, various emitting compounds which may fluoresce or phosphoresce and which emit blue, green, yellow, orange or red light are used in the emitting layers. Especially preferred are three-layer systems, i.e. systems having three emitting layers, where the three layers show blue, green and orange or red emission (for the basic construction see, for example, WO 2005/011013). The compounds of the invention are preferably present in the hole transport layer, hole injection layer or electron blocking layer.


It is preferable in accordance with the invention when the compound of formula (I) is used in an electronic device comprising one or more phosphorescent emitting compounds. In this case, the compound may be present in different layers, preferably in a hole transport layer, an electron blocking layer, a hole injection layer or in an emitting layer.


The term “phosphorescent emitting compounds” typically encompasses compounds where the emission of light is effected through a spin-forbidden transition, for example a transition from an excited triplet state or a state having a higher spin quantum number, for example a quintet state.


Suitable phosphorescent emitting compounds (=triplet emitters) are especially compounds which, when suitably excited, emit light, preferably in the visible region, and also contain at least one atom of atomic number greater than 20, preferably greater than 38, and less than 84, more preferably greater than 56 and less than 80. Preference is given to using, as phosphorescent emitting compounds, compounds containing copper, molybdenum, tungsten, rhenium, ruthenium, osmium, rhodium, iridium, palladium, platinum, silver, gold or europium, especially compounds containing iridium, platinum or copper. In the context of the present invention, all luminescent iridium, platinum or copper complexes are considered to be phosphorescent emitting compounds.


Examples of the above-described emitting compounds can be found in applications WO 00/70655, WO 01/41512, WO 02/02714, WO 02/15645, EP 1191613, EP 1191612, EP 1191614, WO 05/033244, WO 05/019373 and US 2005/0258742. In general, all phosphorescent complexes as used for phosphorescent OLEDs according to the prior art and as known to those skilled in the art in the field of organic electroluminescent devices are suitable. It is also possible for the person skilled in the art, without exercising inventive skill, to use further phosphorescent complexes in combination with the compounds of formula (I) in organic electroluminescent devices. Further examples are listed in a table which follows.


It is also possible in accordance with the invention to use the compound of formula (I) in an electronic device comprising one or more fluorescent emitting compounds.


In a preferred embodiment of the invention, the compounds of formula (I) are used as hole-transporting material. In that case, the compounds are preferably present in a hole transport layer, an electron blocking layer or a hole injection layer. Particular preference is given to use in an electron blocking layer.


A hole transport layer according to the present application is a layer having a hole-transporting function between the anode and emitting layer.


Hole injection layers and electron blocking layers are understood in the context of the present application to be specific embodiments of hole transport layers. A hole injection layer, in the case of a plurality of hole transport layers between the anode and emitting layer, is a hole transport layer which directly adjoins the anode or is separated therefrom only by a single coating of the anode. An electron blocking layer, in the case of a plurality of hole transport layers between the anode and emitting layer, is that hole transport layer which directly adjoins the emitting layer on the anode side. Preferably, the OLED of the invention comprises two, three or four hole-transporting layers between the anode and emitting layer, at least one of which preferably contains a compound of formula (I), and more preferably exactly one or two contain a compound of formula (I).


If the compound of formula (I) is used as hole transport material in a hole transport layer, a hole injection layer or an electron blocking layer, the compound can be used as pure material, i.e. in a proportion of 100%, in the hole transport layer, or it can be used in combination with one or more further compounds. In a preferred embodiment, the organic layer comprising the compound of the formula (I) then additionally contains one or more p-dopants. p-Dopants used according to the present invention are preferably those organic electron acceptor compounds capable of oxidizing one or more of the other compounds in the mixture.


Particularly preferred embodiments of p-dopants are the compounds disclosed in WO 2011/073149, EP 1968131, EP 2276085, EP 2213662, EP 1722602, EP 2045848, DE 102007031220, U.S. Pat. Nos. 8,044,390, 8,057,712, WO 2009/003455, WO 2010/094378, WO 2011/120709, US 2010/0096600, WO 2012/095143 and DE 102012209523.


Particularly preferred p-dopants are quinodimethane compounds, azaindenofluorenediones, azaphenalenes, azatriphenylenes, I2, metal halides, preferably transition metal halides, metal oxides, preferably metal oxides containing at least one transition metal or a metal of main group 3, and transition metal complexes, preferably complexes of Cu, Co, Ni, Pd and Pt with ligands containing at least one oxygen atom as bonding site. Preference is further given to transition metal oxides as dopants, preferably oxides of rhenium, molybdenum and tungsten, more preferably Re2O7, MoOs3, WOs3 and ReO3.


The p-dopants are preferably in substantially homogeneous distribution in the p-doped layers. This can be achieved, for example, by coevaporation of the p-dopant and the hole transport material matrix.


Preferred p-dopants are especially the following compounds:




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In a further preferred embodiment of the invention, the compound of formula (I) is used as hole transport material in combination with a hexaazatriphenylene derivative as described in US 2007/0092755. Particular preference is given here to using the hexaazatriphenylene derivative in a separate layer.


In a further embodiment of the present invention, the compound of the formula (I) is used in an emitting layer as matrix material in combination with one or more emitting compounds, preferably phosphorescent emitting compounds.


The proportion of the matrix material in the emitting layer in this case is between 50.0% and 99.9% by volume, preferably between 80.0% and 99.5% by volume, and more preferably between 92.0% and 99.5% by volume for fluorescent emitting layers and between 85.0% and 97.0% by volume for phosphorescent emitting layers.


Correspondingly, the proportion of the emitting compound is between 0.1% and 50.0% by volume, preferably between 0.5% and 20.0% by volume, and more preferably between 0.5% and 8.0% by volume for fluorescent emitting layers and between 3.0% and 15.0% by volume for phosphorescent emitting layers.


An emitting layer of an organic electroluminescent device may also comprise systems comprising a plurality of matrix materials (mixed matrix systems) and/or a plurality of emitting compounds. In this case too, the emitting compounds are generally those compounds having the smaller proportion in the system and the matrix materials are those compounds having the greater proportion in the system. In individual cases, however, the proportion of a single matrix material in the system may be less than the proportion of a single emitting compound.


It is preferable that the compounds of formula (I) are used as a component of mixed matrix systems. The mixed matrix systems preferably comprise two or three different matrix materials, more preferably two different matrix materials. Preferably, in this case, one of the two materials is a material having hole-transporting properties and the other material is a material having electron-transporting properties. The compound of the formula (I) is preferably the matrix material having hole-transporting properties. The desired electron-transporting and hole-transporting properties of the mixed matrix components may, however, also be combined mainly or entirely in a single mixed matrix component, in which case the further mixed matrix component(s) fulfill(s) other functions. The two different matrix materials may be present in a ratio of 1:50 to 1:1, preferably 1:20 to 1:1, more preferably 1:10 to 1:1 and most preferably 1:4 to 1:1. Preference is given to using mixed matrix systems in phosphorescent organic electroluminescent devices. One source of more detailed information about mixed matrix systems is the application WO 2010/108579.


The mixed matrix systems may comprise one or more emitting compounds, preferably one or more phosphorescent emitting compounds. In general, mixed matrix systems are preferably used in phosphorescent organic electroluminescent devices.


Particularly suitable matrix materials which can be used in combination with the compounds of the invention as matrix components of a mixed matrix system are selected from the preferred matrix materials specified below for phosphorescent emitting compounds or the preferred matrix materials for fluorescent emitting compounds, according to what type of emitting compound is used in the mixed matrix system.


Preferred phosphorescent emitting compounds for use in mixed matrix systems are the same as detailed further up as generally preferred phosphorescent emitter materials.


Preferred embodiments of the different functional materials in the electronic device are listed hereinafter.


Preferred phosphorescent emitting compounds are the following ones:




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Preferred fluorescent emitting compounds are selected from the class of the arylamines. An arylamine or an aromatic amine in the context of this invention is understood to mean a compound containing three substituted or unsubstituted aromatic or heteroaromatic ring systems bonded directly to the nitrogen. Preferably, at least one of these aromatic or heteroaromatic ring systems is a fused ring system, more preferably having at least 14 aromatic ring atoms. Preferred examples of these are aromatic anthracenamines, aromatic anthracenediamines, aromatic pyrenamines, aromatic pyrenediamines, aromatic chrysenamines or aromatic chrysenediamines. An aromatic anthracenamine is understood to mean a compound in which a diarylamino group is bonded directly to an anthracene group, preferably in the 9 position. An aromatic anthracenediamine is understood to mean a compound in which two diarylamino groups are bonded directly to an anthracene group, preferably in the 9,10 positions. Aromatic pyrenamines, pyrenediamines, chrysenamines and chrysenediamines are defined analogously, where the diarylamino groups are bonded to the pyrene preferably in the 1 position or 1,6 positions. Further preferred emitting compounds are indenofluorenamines or -fluorenediamines, for example according to WO 2006/108497 or WO 2006/122630, benzoindenofluorenamines or -fluorenediamines, for example according to WO 2008/006449, and dibenzoindenofluoreneamines or -diamines, for example according to WO 2007/140847, and the indenofluorene derivatives having fused aryl groups disclosed in WO 2010/012328. Likewise preferred are the pyrenearylamines disclosed in WO 2012/048780 and in WO 2013/185871. Likewise preferred are the benzoindenofluorenamines disclosed in WO 2014/037077, the benzofluorenamines disclosed in WO 2014/106522, the extended benzoindenofluorenes disclosed in WO 2014/111269 and in WO 2017/036574, the phenoxazines disclosed in WO 2017/028940 and in WO 2017/028941, and the fluorene derivatives bonded to furan units or to thiophene units that are disclosed in WO 2016/150544.


Useful matrix materials, preferably for fluorescent emitting compounds, include materials of various substance classes. Preferred matrix materials are selected from the classes of the oligoarylenes (e.g. 2,2′,7,7′-tetraphenylspirobifluorene according to EP 676461 or dinaphthylanthracene), especially of the oligoarylenes containing fused aromatic groups, the oligoarylenevinylenes (e.g. DPVBi or spiro-DPVBi according to EP 676461), the polypodal metal complexes (for example according to WO 2004/081017), the hole-conducting compounds (for example according to WO 2004/058911), the electron-conducting compounds, especially ketones, phosphine oxides, sulphoxides, etc. (for example according to WO 2005/084081 and WO 2005/084082), the atropisomers (for example according to WO 2006/048268), the boronic acid derivatives (for example according to WO 2006/117052) or the benzanthracenes (for example according to WO 2008/145239). Particularly preferred matrix materials are selected from the classes of the oligoarylenes comprising naphthalene, anthracene, benzanthracene and/or pyrene or atropisomers of these compounds, the oligoarylenevinylenes, the ketones, the phosphine oxides and the sulphoxides. Very particularly preferred matrix materials are selected from the classes of the oligoarylenes comprising anthracene, benzanthracene, benzophenanthrene and/or pyrene or atropisomers of these compounds. An oligoarylene in the context of this invention shall be understood to mean a compound in which at least three aryl or arylene groups are bonded to one another. Preference is further given to the anthracene derivatives disclosed in WO 2006/097208, WO 2006/131192, WO 2007/065550, WO 2007/110129, WO 2007/065678, WO 2008/145239, WO 2009/100925, WO 2011/054442 and EP 1553154, the pyrene compounds disclosed in EP 1749809, EP 1905754 and US 2012/0187826, the benzanthracenylanthracene compounds disclosed in WO 2015/158409, the indenobenzofurans disclosed in WO 2017/025165, and the phenanthrylanthracenes disclosed in WO 2017/036573.


Preferred matrix materials for phosphorescent emitting compounds are, as well as the compounds of the formula (I), aromatic ketones, aromatic phosphine oxides or aromatic sulphoxides or sulphones, for example according to WO 2004/013080, WO 2004/093207, WO 2006/005627 or WO 2010/006680, triarylamines, carbazole derivatives, e.g. CBP (N,N-biscarbazolylbiphenyl) or the carbazole derivatives disclosed in WO 2005/039246, US 2005/0069729, JP 2004/288381, EP 1205527 or WO 2008/086851, indolocarbazole derivatives, for example according to WO 2007/063754 or WO 2008/056746, indenocarbazole derivatives, for example according to WO 2010/136109, WO 2011/000455 or WO 2013/041176, azacarbazole derivatives, for example according to EP 1617710, EP 1617711, EP 1731584, JP 2005/347160, bipolar matrix materials, for example according to WO 2007/137725, silanes, for example according to WO 2005/111172, azaboroles or boronic esters, for example according to WO 2006/117052, triazine derivatives, for example according to WO 2010/015306, WO 2007/063754 or WO 2008/056746, zinc complexes, for example according to EP 652273 or WO 2009/062578, diazasilole or tetraazasilole derivatives, for example according to WO 2010/054729, diazaphosphole derivatives, for example according to WO 2010/054730, bridged carbazole derivatives, for example according to US 2009/0136779, WO 2010/050778, WO 2011/042107, WO 2011/088877 or WO 2012/143080, triphenylene derivatives, for example according to WO 2012/048781, or lactams, for example according to WO 2011/116865 or WO 2011/137951.


Suitable charge transport materials as usable in the hole injection or hole transport layer or electron blocking layer or in the electron transport layer of the electronic device of the invention are, as well as the compounds of the formula (I), for example, the compounds disclosed in Y. Shirota et al., Chem. Rev. 2007, 107(4), 953-1010, or other materials as used in these layers according to the prior art.


Preferably, the inventive OLED comprises two or more different hole-transporting layers. The compound of the formula (I) may be used here in one or more of or in all the hole-transporting layers. In a preferred embodiment, the compound of the formula (I) is used in exactly one or exactly two hole-transporting layers, and other compounds, preferably aromatic amine compounds, are used in the further hole-transporting layers present. Further compounds which are used alongside the compounds of the formula (I), preferably in hole-transporting layers of the OLEDs of the invention, are especially indenofluorenamine derivatives (for example according to WO 06/122630 or WO 06/100896), the amine derivatives disclosed in EP 1661888, hexaazatriphenylene derivatives (for example according to WO 01/049806), amine derivatives with fused aromatics (for example according to U.S. Pat. No. 5,061,569), the amine derivatives disclosed in WO 95/09147, monobenzoindenofluorenamines (for example according to WO 08/006449), dibenzoindenofluorenamines (for example according to WO 07/140847), spirobifluorenamines (for example according to WO 2012/034627 or WO 2013/120577), fluorenamines (for example according to WO 2014/015937, WO 2014/015938, WO 2014/015935 and WO 2015/082056), spirodibenzopyranamines (for example according to WO 2013/083216), dihydroacridine derivatives (for example according to WO 2012/150001), spirodibenzofurans and spirodibenzothiophenes, for example according to WO 2015/022051, WO 2016/102048 and WO 2016/131521, phenanthrenediarylamines, for example according to WO 2015/131976, spirotribenzotropolones, for example according to WO 2016/087017, spirobifluorenes with meta-phenyldiamine groups, for example according to WO 2016/078738, spirobisacridines, for example according to WO 2015/158411, xanthenediarylamines, for example according to WO 2014/072017, and 9,10-dihydroanthracene spiro compounds with diarylamino groups according to WO 2015/086108.


Very particular preference is given to the use of spirobifluorenes substituted by diarylamino groups in the 4 position as hole-transporting compounds, especially to the use of those compounds that are claimed and disclosed in WO 2013/120577, and to the use of spirobifluorenes substituted by diarylamino groups in the 2 position as hole-transporting compounds, especially to the use of those compounds that are claimed and disclosed in WO 2012/034627.


Materials used for the electron transport layer may be any materials as used according to the prior art as electron transport materials in the electron transport layer. Especially suitable are aluminum complexes, for example Alq3, zirconium complexes, for example Zrq4, lithium complexes, for example Liq, benzimidazole derivatives, triazine derivatives, pyrimidine derivatives, pyridine derivatives, pyrazine derivatives, quinoxaline derivatives, quinoline derivatives, oxadiazole derivatives, aromatic ketones, lactams, boranes, diazaphosphole derivatives and phosphine oxide derivatives. Further suitable materials are derivatives of the abovementioned compounds as disclosed in JP 2000/053957, WO 2003/060956, WO 2004/028217, WO 2004/080975 and WO 2010/072300.


Preferred cathodes of the electronic device are metals having a low work function, metal alloys or multilayer structures composed of various metals, for example alkaline earth metals, alkali metals, main group metals or lanthanoids (e.g. Ca, Ba, Mg, Al, In, Mg, Yb, Sm, etc.). Additionally suitable are alloys composed of an alkali metal or alkaline earth metal and silver, for example an alloy composed of magnesium and silver. In the case of multilayer structures, in addition to the metals mentioned, it is also possible to use further metals having a relatively high work function, for example Ag or Al, in which case combinations of the metals such as Ca/Ag, Mg/Ag or Ba/Ag, for example, are generally used. It may also be preferable to introduce a thin interlayer of a material having a high dielectric constant between a metallic cathode and the organic semiconductor. Examples of useful materials for this purpose are alkali metal or alkaline earth metal fluorides, but also the corresponding oxides or carbonates (e.g. LiF, Li2O, BaF2, MgO, NaF, CsF, Cs2CO3, etc.). It is also possible to use lithium quinolinate (LiQ) for this purpose. The layer thickness of this layer is preferably between 0.5 and 5 nm.


Preferred anodes are materials having a high work function. Preferably, the anode has a work function of greater than 4.5 eV versus vacuum. Firstly, metals having a high redox potential are suitable for this purpose, for example Ag, Pt or Au. Secondly, metal/metal oxide electrodes (e.g. Al/Ni/NiOx, Al/PtOx) may also be preferred. For some applications, at least one of the electrodes has to be transparent or partly transparent in order to enable the irradiation of the organic material (organic solar cell) or the emission of light (OLED, O-laser). Preferred anode materials here are conductive mixed metal oxides. Particular preference is given to indium tin oxide (ITO) or indium zinc oxide (IZO). Preference is further given to conductive doped organic materials, especially conductive doped polymers. In addition, the anode may also consist of two or more layers, for example of an inner layer of ITO and an outer layer of a metal oxide, preferably tungsten oxide, molybdenum oxide or vanadium oxide.


The device is structured appropriately (according to the application), contact-connected and finally sealed, in order to rule out damaging effects by water and air.


In a preferred embodiment, the electronic device is characterized in that one or more layers are coated by a sublimation process. In this case, the materials are applied by vapour deposition in vacuum sublimation systems at an initial pressure of less than 10−5 mbar, preferably less than 10−6 mbar. In this case, however, it is also possible that the initial pressure is even lower, for example less than 10−7 mbar.


Preference is likewise given to an electronic device, characterized in that one or more layers are coated by the OVPD (organic vapour phase deposition) method or with the aid of a carrier gas sublimation. In this case, the materials are applied at a pressure between 10−5 mbar and 1 bar. A special case of this method is the OVJP (organic vapour jet printing) method, in which the materials are applied directly by a nozzle and thus structured (for example M. S. Arnold et al., Appl. Phys. Lett. 2008, 92, 053301).


Preference is additionally given to an electronic device, characterized in that one or more layers are produced from solution, for example by spin-coating, or by any printing method, for example screen printing, flexographic printing, nozzle printing or offset printing, but more preferably LITI (light-induced thermal imaging, thermal transfer printing) or inkjet printing. For this purpose, soluble compounds of formula (I) are needed. High solubility can be achieved by suitable substitution of the compounds.


It is further preferable that an electronic device of the invention is produced by applying one or more layers from solution and one or more layers by a sublimation method.


According to the invention, the electronic devices comprising one or more compounds of formula (I) can be used in displays, as light sources in lighting applications and as light sources in medical and/or cosmetic applications (e.g. light therapy).







EXAMPLES
A) Synthesis Examples
A-1) Route 1
Synthesis of 2′,7′-di-tert-Butyl-1-bromospiro-9,9′-bifluorene 1a



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A solution of 4,4′-di-t-Butyl-2,Br-biphenyl (250 g, 725 mmol) in THF (1900 ml) is treated with 318 mL of n-BuLi (2.5 M in hexane, 785 mmol) under argon at −78° C. The mixture is stirred for 30 minutes. A solution of 1-Br-fluoren-9-one (144 g, 556 mmol) in 1000 mL THF is added dropwise. The reaction proceeds at −78° C. for 30 minutes and then is stirred at room temperature overnight. The reaction is quenched with water and the solid is filtered. Without further purification, a mixture of the alcohol (262 g, 90%), acetic acid (2200 mL) and concentrated HCl (100 mL) is refluxed for 2 hours. After cooling, the mixture is filtered and washed with water and dried under vacuum. The product is isolated in the form of a white solid (240 g, 95% of theory).


The synthesis of further brominated spirobifluorene derivatives is carried out analogously:


















Product:


Ex.
Bromo-biphenyl
Bromo-fluorenone
Bromo-Spirobifluorene







1b


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Synthesis of 2′,7′-di-tert-Butyl-4-biphenyl-2-(9,9-dimethyifluorenyl)-1-spiro-9,9′-bifluorenylamine 2a



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Tri-tert-butylphosphine (4.4 ml of a 1.0 M solution in toluene, 4.4 mmol), palladium acetate (248 mg, 1.1 mmol) and sodium tert-butoxide (16.0 g, 166 mmol) are added to a solution of biphenyl-2-yl-(9,9-dimethyl-9H-fluoren-2-yl)amine (40.0 g, 111 mmol) and 2′,7′-di-tertButyl-1-bromospiro-9,9′-bifluorene (56.9 g, 108 mmol) in degassed toluene (500 ml), and the mixture is heated under reflux for 2 h. The reaction mixture is cooled to room temperature, extended with toluene and filtered through Celite. The filtrate is evaporated in vacuo, and the residue is crystallised from ethyl acetate/heptane. The crude product is extracted in a Soxhlet extractor (toluene) and purified by zone sublimation in vacuo twice (p=3×10−4 mbar, T=298° C.). The product is isolated in the form of a pale-yellow solid (20.4 g, 24% of theory, purity >99.99% according to HPLC).


The following compounds are obtained analogously:















Ex.
Br-spiro
Amine
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A-2) Route 2: Synthesis of 2′,7′-di-tert-Butyl-4-biphenyl-2-(9,9-dimethyl-fluorenyl)-1-spiro-9,9′-bifluorenylamine 2a
Synthesis of 1-(1-biphen-4-yl)-(9,9′-dimethylfluoren-2-yl)amine-9H-Fluoren-9-one 3a



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Tri-tert-butylphosphine (4.5 ml of a 1.0 M solution in toluene, 1.9 mmol), palladium acetate (217 mg, 0.97 mmol) and sodium tert-butoxide (13.9 g, 145 mmol) are added to a solution of 1-biphenyl-yl-(9,9-dimethyl-9H-fluoren-2-yl)-amine (40.0 g, 111 mmol), 1-bromo-fluoren-9-one, (25 g, 96 mmol) in degassed toluene (200 ml), and the mixture is heated under reflux overnight. The reaction mixture is cooled to room temperature, extended with toluene and filtered through Celite. The filtrate is evaporated in vacuo, and the residue is crystallised from toluene/heptane The product is isolated in the form of a pale-yellow solid (43 g, 82% of theory).


The following compounds are obtained analogously:
















Bromo-

Product:


Ex.
fluorenone
Amine
1-Amine-fluorenone







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Synthesis of 2′,7′-di-tert-Butyl-4-biphenyl-2-(9,9-dimethylfluorenyl)-1-spiro-9,9′-bifluorenylamine 4a



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A solution of 4,4′-di-t-butyl-2-Br-biphenyl (17 g, 49 mmol) in THF (90 ml) is treated with 25 mL of n-BuLi (2.1 M in hexane, 50 mmol) under argon at −78° C. The mixture is stirred for 30 minutes. A solution of 1-(1-biphen-4-yl)-(9,9-dimethylfluoren-2-yl)amine-9H-fluoren-9-one (27 g, 50 mmol) in 90 mL THF is added dropwise. The reaction proceeds at −78° C. for 30 minutes and then is stirred at room temperature overnight. The reaction is quenched with water and extracted with ethyl acetate. The intermediate alcohol is obtained after the solvent is removed (31 g, 76%). Without further purification, a mixture of the alcohol, acetic acid (700 mL) and concentrated HCl (62 mL) is refluxed for 2 hours. After cooling, the mixture is filtered and washed with water. The residue is crystallised from toluene. The crude product is extracted in a Soxhlet extractor (toluene) and purified by zone sublimation in vacuo. The product is isolated in the form of a pale-yellow solid (13 g, 42% of theory, purity >99.99% according to HPLC).


The following compounds are obtained analogously:
















Ex.
1-Amine-fluorenone
Br-Biphenyl





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A-3) Route 3: Synthesis of 2′,7′-di-tert-Butyl-biphenyl-4-yl-(9,9-dimethyl-9H-fluoren-2-yl)-[1-(9,9′-spiro-bifluoren-4-yl)-phenyl]-amine
Synthesis of Biphenyl-4-yl-(9,9-dimethyl-9H-fluoren-2-yl (4,4,5,5tetramethyl-[1,3,2]dioxaborolan-2-yl)phenyl]-amine



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102 g (198 mmol) of Biphenyl-4-yl-(4-bromo-phenyl)-(9,9-dimethyl-9H-fluoren-2-yl)-amine, 4.8 g (5.9 mmol) of Pd(dppf)Cl2, 61.6 g (238 mmol) of bis(pinacolato)diboron and 58.3 g (594 mmol) of potassium acetate are dissolved in 1300 mL of 1,4-dioxane. The reaction mixture is refluxed and agitated under an argon atmosphere for 12 hours and after cooling to room temperature, the mixture is filtered through Celite. The filtrate is evaporated in vacuo, and the residue is crystallised from heptane. The product is isolated in the form of a pale-yellow solid (87 g, 78% of theory).


Synthesis of 2′,7′-di-tert-Butyl-biphenyl-4-yl-(9,9-dimethyl-9H-fluoren-2-yl)-[1-(9,9′-spiro-bifluoren-4-yl)-phenyl]-amine 5a



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28 g (49.4 mmol) of Biphenyl-4-yl-(9,9-dimethyl-9H-fluoren-2-yl (4,4,5,5-tetramethyl-[1,3,2]dioxaborolan-2-yl)-phenyl]-amine, 20 g (39 mmol) of 2′,7′-di-tert-butyl-1-bromospiro-9,9′-bifluorene, 1.8 g (2.5 mmol) of PdCl2(Cy)3, 15 g (99 mmol) of cesium fluoride are dissolved in 500 mL of toluene. The reaction mixture is refluxed and agitated under an argon atmosphere for 12 hours and after cooling to room temperature, the mixture is filtered through Celite. The filtrate is evaporated in vacuo, and the residue is crystallised from heptane. The crude product is extracted in a Soxhlet extractor (toluene) and purified by zone sublimation in vacuo twice.


The product is isolated in the form of a pale-yellow solid (9 g, 25% of theory, purity >99.99% according to HPLC).


The following compounds are synthesized analogously:
















Ex.
Br-Spiro
Amine





5b


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A-4) Route 4: Synthesis of 2′,7′-di-tert-Butyl-9-Spiro-1-yl-3,6-diphenyl-9H-carbazol 6a



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19.2 g (38 mmol) 2′,7′-di-tert-Butyl-1-bromospiro-9,9-bifluorene, 15 g (47 mmol) 3,6-Diphenyl-9-H-carbazole and 29.2 g Rb2CO3 are suspended in 250 mL p-Xylol. To the suspension are given 0.95 g (4.2 mmol) Pd(OAc)2 and 12.6 ml of a 1M solution of Tri-tert-butylphosphine. The mixture is stirred 24 h under reflux. After cooling the organic phase is separated, washed three times with 150 mL water and is subsequently concentrated to dryness in vacuo. The residue is hot extracted with toluene, recrystallized three times from toluene and subsequently sublimated at high vacuum. Yield is 19.6 g (26.2 mmol) corresponding to 68% of theory. Purity is according to HPLC 99.9%.


The following compounds are obtained analogously:

















Starting material 1
Starting material 2





6b


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A-5) Route 5: Synthesis of Compound 7a
Synthesis of 1-(4-Chloro-phenyl)-fluoren-9-one 7a



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76 g (486 mmol) of 4-chlorophenylboronic acid, 120 g (463 mmol) of 1-Brom-fluoren-9-one and 16 g (14 mmol) of Pd(Ph3P)4 are suspended in 1900 ml of THF. 463 ml of 2 M potassium carbonate solution are slowly added to this suspension, and the reaction mixture is heated under reflux for 16 h. After cooling, the organic phase is separated off, filtered through silica gel, washed three times with 500 ml of water and subsequently evaporated to dryness. The residue is purified by crystallization with MeOH. Yield: 125 g (420 mmol), 90% of theory, purity according to HPLC >98%.
















1-Br-Fluorenone
Boron acid
Product







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Synthesis of 1-(4-Brom-phenyl)-fluoren-9-one 1-1 (8a)



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Synthesis of boronester

10 g (39 mmol) of 1-bromofluorenone, 14.7 g (58 mmol) of bis(pinacolato)diborane and 12.5 g (127 mmol) of potassium acetate are suspended in 300 ml of dioxane. 1.6 g (1.9 mmol) of 1,1-bis(diphenyl-phosphino)ferrocenepalladium(II) dichloride complex with DCM are added to this suspension. The reaction mixture is heated under reflux for 16 h. After cooling, the organic phase is separated off, washed three times with 400 ml of water and subsequently evaporated to dryness. The residue is recrystallised from toluene (6 g, 51% yield).


Synthesis of 8a

20 g (69 mmol) of 1-Bromo-4-iodo-benzene, 21.1 g (69 mmol) of 1-pinacolboron ester-fluoren-9-one and 2.4 g (2.1 mmol) of Pd(Ph3P)4 are suspended in 300 ml of THF. 283 ml of 2 M potassium carbonate solution are slowly added to this suspension, and the reaction mixture is heated under reflux for 16 h. After cooling, the organic phase is separated off, filtered through silica gel, washed three times with 300 ml of water and subsequently evaporated to dryness. The residue is purified by crystallisation with MeOH. Yield: 19 g (54 mmol), 78% of theory, purity according to HPLC >98%.


The following compounds are prepared analogously:


















8b


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Synthesis of 1-(4-((1,1′-biphenyl-4-yl)-(9,9-dimethyl-9H-fluoren-2-yl)amino)phenyl)-9H-Fluoren-9-one 9a



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Tri-tert-butylphosphine (4.5 ml of a 1.0 M solution in toluene, 1.9 mmol) and 0.98 g (1 mmol) of Pd2(dba)3 and sodium tert-butoxide (5.1 g, 50 mmol) are added to a solution of 1-biphenyl-yl-(9,9-dimethyl-9H-fluoren-2-yl)amine (32 g, 90 mmol), 1-1-(4-chlor-phenyl)-fluoren-9-one, (25 g, 86 mmol) in degassed toluene (200 ml), and the mixture is heated under reflux overnight. The reaction mixture is cooled to room temperature, extended with toluene and filtered through Celite. The filtrate is evaporated in vacuo, and the residue is crystallised from toluene/heptane The product is isolated in the form of a pale-yellow solid (43 g, 81% of theory).
















Ex.
Fluorenone
Amine





9b


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Ex.
Product: 1-Amine-fluorenone






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Synthesis of N-((1,1′-biphenyl)-4-yl)N-(4-(2′,7′-di-tert-butyl-9,9′-spirobi(fluorene)-1-yl)phenyl)-9,9-dimethylfluoren-2-amine 10a



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A solution of 4,4′-di-t-Butyl-2,Br-biphenyl (17 g, 49 mmol) in THF (90 ml) is treated with 25 mL of n-BuLi (2.1 M in hexane, 50 mmol) under argon at −78° C. The mixture is stirred for 30 minutes. A solution of 1-(4-((1,1′-biphenyl-4-yl)-(9,9-dimethyl-9H-fluoren-2-yl)amino)phenyl)-9H-Fluoren-9-one (27 g, 44 mmol) in 90 mL THF is added dropwise. The reaction proceeds at −78° C. for 30 minutes and then is stirred at room temperature overnight. The reaction is quenched with water and extracted with ethyl acetate. The intermediate alcohol is obtained after the solvent is removed (31 g, 76%). Without further purification, a mixture of the alcohol, acetic acid (700 mL) and concentrated HCl (62 mL) is refluxed for 2 hours. After cooling, the mixture is filtered and washed with water. The residue is crystallised from toluene. The crude product is extracted in a Soxhlet extractor (toluene) and purified by zone sublimation in vacuo. The product is isolated in the form of a pale-yellow solid (13 g, 34% of theory, purity >99.99% according to HPLC).


The following compounds are prepared analogously:
















Ex.
Product: 1-Amine-fluorenone
Br-Biphenyl





10b


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A-6) Route 6
Synthesis of 2,7-di-tert-butyl-8′-(4-chlorophenyl)9,9′-spirobifluorene 11a



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20 g (58 mmol) of 2-Br-4,4′-di-tert-Butyl-1,1′-biphenyl are initially introduced in 400 ml of THF at −78° C. 30 ml of BuLi (2 M in hexane) are added dropwise at this temperature. After 1 hour, 16.9 g (58 mmol) of 1-(4-chloro-phenyl)-fluoren-9-one in 200 ml of THF are added dropwise. The batch is left to stir overnight at room temperature, added to ice-water and extracted with dichloromethane. The combined organic phases are washed with water and dried over sodium sulfate. The solvent is removed in vacuo, and the residue is, without further purification, heated under reflux at 100° C. overnight with 30 ml of HCl and 300 ml of AcOH. After cooling, the precipitated solid is filtered off with suction, washed once with 100 ml of water, three times with 100 ml of ethanol each time and subsequently recrystallised from heptane. Yield: 17 g (56 mmol), 53%; purity approx. 98% according to 1H-NMR.


The following compounds are synthesized analogously:
















Example
Reagent 1
Reagent 2





11b


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Synthesis of 2,7-di-tert-butyl-8′-(4-chlorophenyl)-9,9′-spirobifluorene 12a



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10.7 g (69 mmol) of 4-chlorophenylboronic acid, 35 g (69 mmol) of 2′,7′-di-tert-butyl-1-brom-spirofluorene and 5.4 g (5 mmol) of Pd(Ph3P)4 are suspended in 600 ml of THF. 155 ml of 2 M potassium carbonate solution are slowly added to this suspension, and the reaction mixture is heated under reflux for 16 h. After cooling, the organic phase is separated off, filtered through silica gel, washed three times with 500 ml of water and subsequently evaporated to dryness. The residue is purified by crystallisation with MeOH. Yield: 29 g (65 mmol), 94% of theory, purity according to HPLC >98%.
















Example
Reagent 1
Reagent 2





12b


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Example
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Synthesis of 2,7-di-tert-butyl-8′-(4-chlorophenyl)-9,9′-spirobifluorene



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Synthesis of 2-{2′,7′-di-tert-butyl-9,9′-spirobi[fluorene]-8-yl}-4,4,5,5-tetramethyl-1,3,2-dioxaborolane ester 13a



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50 g (99 mmol) of 2′,7′-di-tert-butyl-1-brom-spirofluorene, 32 g (123 mmol) of bis(pinacolato)diborane and 30 g (309 mmol) of potassium acetate are suspended in 800 ml of dioxane. 2.5 g (3.09 mmol) of 1,1-bis(diphenyl-phosphino)ferrocenepalladium(II) dichloride complex with DCM are added to this suspension. The reaction mixture is heated under reflux for 16 h. After cooling, the organic phase is separated off, washed three times with 400 ml of water and subsequently evaporated to dryness. The residue is recrystallised from toluene (52 g, 95% yield).


The following compounds are prepared analogously:














Example
Reagent 1
Product







13b


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Synthesis of 2-{2′,7′-di-tert-butyl-9,9′-spirobi[fluorene]-8-yl}-4,4,5,5-tetramethyl-1,3,2-dioxaborolane ester 14a



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50 g (93 mmol) of 2′,7′-di-tert-butyl-1-brom-spirofluorene are initially introduced in 50 ml of THF at −20° C. 56 ml of BuLi (2 M in hexane) are added dropwise at this temperature. After 4 hours, 18.6 g (100 mmol) of isopropoxytetramethyldioxaborolane are added dropwise. The batch is left to stir overnight at room temperature. When the reaction is complete, water and ethyl acetate are added, and the organic phase is separated off, dried and evaporated. The residue is purified by chromatography on silica gel. Yield: 44 g (79 mmol), 85% of theory, purity according to HPLC >98%.


The following compounds are prepared analogously:
















Example
Reagent 1
Reagent 2





14b


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Synthesis of 2,7-di-tert-butyl-8′-(4-chlorophenyl)-9,9′-spirobifluorene 15a



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20.3 g (37 mmol) of 2-{2′,7′-di-tert-butyl-9,9′-spirobi[fluorene]-8-yl}-4,4,5,5-tetramethyl-1,3,2-dioxaborolane ester and 8.8 g (46.3 mmol) of chlorine derivative are suspended in 300 ml of dioxane and 14.1 g of caesium fluoride (92.6 mmol). 4.1 g (5.56 mmol) of bis-(tricyclohexylphosphine)palladium dichloride are added to this suspension, and the reaction mixture is heated under reflux for 24 h. After cooling, the organic phase is separated off, filtered through silica gel, washed three times with 100 ml of water and subsequently evaporated to dryness. The crude product is recrystallised from heptane/toluene. The yield is 15.8 g (78% of theory).


The following compounds are prepared analogously:
















Example
Reagent 1
Reagent 2





15b


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Synthesis of N-((1,1′-biphenyl)-4-yl)N-(4-(2′,7′-di-tert-butyl-9,9′-spirobi(fluorene)-1-yl)phenyl)-9,9-dimethylfluoren-2-amine 16a



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10.1 g (28 mmol) of biphenyl-4-yl-(9,9-dimethyl-9H-fluoren-2-yl)amine and 14.5 g (27 mol) of the 2,7-di-tert-butyl-8′-(4-chlorophenyl)-9,9′-spirobifluorene are dissolved in 225 ml of toluene. The solution is degassed and saturated with N2. 2.1 ml (2.1 mmol) of a 10% tri-tert-butylphosphine solution and 0.98 g (1 mmol) of Pd2(dba)3 are then added, and 5.1 g of sodium tert-butoxide (53 mmol) are subsequently added. The reaction mixture is heated at the boil under a protective atmosphere for 5 h. The mixture is subsequently partitioned between toluene and water, the organic phase is washed three times with water and dried over Na2SO4 and evaporated in a rotary evaporator. After filtration of the crude product through silica gel with toluene, the residue which remains is recrystallised from heptane/toluene and finally sublimed in a high vacuum. The purity is 99.9% (HPLC). The yield of compound is 11.5 g (48% of theory).


The following compounds are also prepared analogously to the synthesis of compound 1.
















Ex.
Starting material 1
Starting material 2





16b


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B) Use Examples

1) EBL Use of Compounds


A fluorescent blue emitting OLED comprising the compound HTM according to the present application in the EBL is prepared. The OLED has the following stack structure:


Anode/HIM:F4TCNQ (5%) (20 nm)/HIM (180 nm)/HTM (10 nm)/H:SEB (5%) (20 nm)/ETM:LiQ (50%) (30 nm)/LiQ (1 nm)/cathode.


In the above stack, the anode consists of a glass plate coated with a 50 nm layer of structured ITO. The cathode is made of a 100 nm thick layer of Al. The structures of the materials which are present in the different layers are given in Table 1. The materials are deposited by thermal vapor deposition in a vacuum chamber. If two materials are present in a layer, the percentage given above is the proportion of the second material in percent by volume.


The OLED is electrically driven, and is characterized by establishing the following parameters: 1) external quantum efficiency (EQE, measured in percent) is determined as a function of luminance, calculated from current-voltage-luminance characteristics (IUL characteristics) assuming Lambertian radiation characteristics, at a current density of 10 mA/cm2; 2) lifetime LD80 @ 5000 cd/m2, which is the time until the OLED has dropped from its starting brightness of 5000 cd/m2 to 80% of its starting brightness; 3) operating voltage at 10 mA/cm2, and 4) LD80 @ 60 mA/cm2, which is the time until the OLED has dropped from its starting brightness at 60 mA/cm2 to 80% of its starting brightness.


For the OLED, the following values are measured: EQE @ 10 mA/cm2: 7.6%, lifetime LD80 @ 5000 cd/m2: 320 h, operating voltage at 10 mA/cm2: 4.0 V.


Compounds 2a-2c, 2e-21, 4a-4m, 5a-5e, 6a-6e, 10a-10m and 16a-161 of the synthesis examples give results which are similar to the ones obtained with compound HTM.


2) HTL Use of Compounds


A fluorescent blue emitting OLED comprising the compound HTM-1 according to the present application in the HIL and the HTL is prepared. The OLED has the following stack structure:


Anode I/HTM-1:F4TCNQ (5%) (20 nm) I/HTM-1 (180 nm) I/EBM (10 nm) I/H:SEB (5%) (20 nm) I/ETM:LiQ (50%) (30 nm) I/LiQ (1 nm) I cathode.


The preparation of the OLED and of the electrode layers, and the characterization is the same as described above in 1).


For the OLED, the following values are measured: EQE @ 10 mA/cm2: 8.2%, lifetime LD80 @ 60 mA/cm2: 340 h, operating voltage at 10 mA/cm2: 4.2 V.


Compounds 2a-21, 4a-4f, 4h-4m, 5a-5e, 6a-6e, 10a-10m and 16a-161 of the synthesis examples give results which are similar to the ones obtained with compound HTM-1.


3) Comparison of Compound EBM-1 According to the Application with Compound EBM-2


OLEDs are prepared which have the following stack structure:


Example according to the invention:


Anode I/HIM:F4TCNQ (5%) (20 nm)/HIM (180 nm)/EBM-1 (10 nm)/H:SEB (5%) (20 nm) I/ETM:LiQ (50%) (30 nm) I/LiQ (1 nm) I cathode.


COMPARATIVE EXAMPLE

As above, only EBM-1 is replaced by EBM-2.


The preparation of the OLEDs and of the electrode layers, and the characterization is the same as described above in 1).


For the OLED comprising the compound EBM-1, the following values are measured: EQE @ 10 mA/cm2: 8.2%, lifetime LD80 @ 60 mA/cm2: 103 h, operating voltage at 10 mA/cm2: 4.3 V.


For the OLED comprising the compound EBM-2 (comparative example), the following values are measured: EQE @ 10 mA/cm2: 8.1%, lifetime LD80 @ 60 mA/cm2: 81 h, operating voltage at 10 mA/cm2: 4.1 V.


This shows in a direct comparison of performance, that an OLED comprising the compound EBM-1 according to the present application, shows strongly improved lifetime, compared to an OLED comprising the compound EBM-2 (comparative example). The other parameters efficiency and operating voltage remain similar.









TABLE 1





Chemical structures of compounds









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F4TCNQ







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HIM







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H







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SEB







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EBM-2








Claims
  • 1.-14. (canceled)
  • 15. A compound of a Formula (I)
  • 16. The compound according to claim 15, wherein index k is 0, so that the group ArL is not present, and the spirobifluorene and the nitrogen atom of the amine are directly connected with each other.
  • 17. The compound according to claim 15, wherein groups Ar1 and Ar2 are, identically or differently, selected from radicals derived from a group selected from the group consisting of phenyl, biphenyl, terphenyl, quaterphenyl, naphthyl, fluorenyl, benzofluorenyl, spirobifluorenyl, indenofluorenyl, dibenzofuranyl, dibenzothiophenyl, carbazolyl, benzofuranyl, benzothiophenyl, indolyl, quinolinyl, pyridyl, pyrimidyl, pyrazinyl, pyridazinyl and triazinyl, where the groups may each be substituted by one or more radicals R3, or from combinations of 2 or 3 radicals derived from those groups, where the groups may each be substituted by one or more radicals R3.
  • 18. The compound according to claim 15, wherein 2, 3, or 4 indices n are equal to 1, and the rest of the indices n is equal to 0.
  • 19. The compound according to claim 15, wherein the compound has not more than one radical R1 bonded to each aromatic six-ring of the spirobifluorene.
  • 20. The compound according to claim 15, wherein groups R1 are selected, identically or differently on each occurrence, from straight-chain alkyl, alkoxy or thioalkyl groups having 1 to 20 C atoms, which may optionally be substituted by one or more groups F, and from branched or cyclic alkyl, alkoxy or thioalkyl groups having 3 to 20 C atoms, which may optionally be substituted by one or more groups F.
  • 21. The compound according to claim 15, wherein the groups R1 conform to one of the following formulae
  • 22. The compound according to claim 15, wherein the compound conforms to one of Formulae (I-A-1) to (I-A-9) and (I-B-1) to (I-B-9)
  • 23. A process for preparation of the compound according to claim 15, which comprises the reactions steps 1) metallation of a biphenyl derivative which has a reactive group in a position which is ortho to the phenyl-phenyl bond;2) adding the metallated biphenyl derivative to a fluorenone derivative which has a group A in its 1-position; where the group A is selected from i) X, or ii) —Ar—X, or iii) —NAr2, or iv) —Ar—NAr2, where Ar is aromatic or heteroaromatic group, and where X is a reactive group; and3) cyclisation of the resulting addition product to a spirobifluorene derivative under acidic conditions or with a Lewis acid.
  • 24. An oligomer, polymer or dendrimer, comprising one or more compounds of Formula (I) according to claim 15, where the bond(s) to the polymer, oligomer or dendrimer may be localised at any positions in Formula (I) substituted by R1, R2 or R3.
  • 25. The formulation, comprising at least one compound of Formula (I) according to claim 15 and at least one solvent.
  • 26. The formulation, comprising at least one polymer, oligomer or dendrimer according to claim 24, and at least one solvent.
  • 27. An electronic device, comprising at least one compound according to claim 15, or at least one polymer, oligomer or dendrimer according to claim 24.
  • 28. An organic electroluminescent device, comprising anode, cathode and at least one emitting layer, where at least one organic layer of the device, which is an emitting layer, a hole transport layer, an electron blocking layer or a hole injection layer, comprises the at least one compound according to claim 15.
Priority Claims (1)
Number Date Country Kind
17178441.6 Jun 2017 EP regional
PCT Information
Filing Document Filing Date Country Kind
PCT/EP2018/066926 6/25/2018 WO 00