Claims
- 1. A light emitting device comprising at least one layer of ZnSe and at least one layer of Mg.sub.y Zn.sub.1-y S.sub.x Se.sub.1-x wherein y=0.07-0.14 and wherein the ratio of y to x is 26/19.
- 2. The device as claimed in claim 1 wherein the amount of magnesium is 7 percent and the amount of sulphur is 5 percent.
- 3. The device as claimed in claim 1 wherein the structure comprises multiple layers.
- 4. The device as claimed in claim 1 wherein the amount of magnesium is 14 percent.
- 5. The device as claimed in claim 1 wherein said layers are disposed on a substrate.
- 6. The structure as claimed in claim 1 further including at least one partially reflecting mirror and a totally reflecting mirror.
- 7. In a device having a light emitting layer of ZnSe the improvement comprising at least one layer of Mg.sub.y Zn.sub.1-y S.sub.x Se.sub.1-x disposed proximate said layer of ZnSe wherein the amount of Mg is between 0.07 and 0.14 and the ratio of y to x is 26/19.
- 8. The device as claimed in claim 7 wherein said y value is 0.07.
- 9. The device as claimed in claim 7 wherein a layer of Mg.sub.y Zn.sub.1-y S.sub.x Se.sub.1-x is disposed on each side of said layer of ZnSe.
- 10. The device as claimed in claim 9 wherein said layers of Mg.sub.y Zn.sub.1-y S.sub.x Se.sub.1-x have differing indexes of refraction from said ZnSe layer.
- 11. The device as claimed in claim 9 wherein said layers of Mg.sub.y Zn.sub.1-y S.sub.x Se.sub.1-x have different band gaps from said layer of ZnSe.
- 12. The device as claimed in claim 7 wherein said layers of Mg.sub.y Zn.sub.1-y S.sub.x Se.sub.1-x and ZnSe are deposited on a substrate.
- 13. The device as claimed in claim 12 wherein said substrate comprises ZnSe.
- 14. A light emitting device comprising a light emitting layer of II-VI material and at least one layer of Mg.sub.y Zn.sub.1-y S.sub.x Se.sub.1-x wherein the ratio of y to x is 26/19 and wherein y=0.07-0.14.
- 15. The device as claimed in claim 14 wherein the light emitting layer comprises ZnSe.
- 16. The device as claimed in claim 14 wherein said y value is 0.07.
- 17. The device as claimed in claim 14 wherein a layer of Mg.sub.y Zn.sub.1-y S.sub.x Se.sub.1-x is disposed on each side of the light emitting layer.
- 18. The device as claimed in claim 17 wherein said layers of Mg.sub.y Zn.sub.1-y S.sub.x Se.sub.1-x have differing indexes of refraction from said light emitting layer.
- 19. The device as claimed in claim 14 wherein the layers of Mg.sub.y Zn.sub.1-y S.sub.x Se.sub.1-x have differing band gaps from said light emitting layer.
- 20. The device as claimed in claim 17 wherein said layers of Mg.sub.y Zn.sub.1-y S.sub.x Se.sub.1-x and said light emitting layers are disposed on a substrate material.
- 21. The device as claimed in claim 20 wherein the substrate comprises ZnSe.
Parent Case Info
This is a continuation of application Ser. No. 07/815,686, filed Dec. 31, 1991, now U.S. Pat. No. 5,260,958.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
4549195 |
Bluzer |
Oct 1985 |
|
Foreign Referenced Citations (2)
Number |
Date |
Country |
52-15163 |
Dec 1977 |
JPX |
56-96885 |
Aug 1981 |
JPX |
Non-Patent Literature Citations (4)
Entry |
"Photoluminescence in ZnSe Grown by Liquid-Phase Epitaxy from Zn-Ga Solution" S. Fujita et al., J. Appl. Phys 50(2) Feb. 1979. |
"Electron Beam Pumped Laser Emission from ZnSxSe1-X" J. R. Onstott, IEEE Journal of Quantum Electronics, Mar. 1977. |
"Luminescence Properties of MgZn1-XSe Prepared by Mg Diffusion", Journal of Electronic Materials, vol. 12, No. 4, 1983 no month for reference. |
"Energy Bandgap and Lattice Constant Contours of II-VI Quanternary Alloys" T. Ido et al., J. of Electronic Mat. L9(5), 1980, pp. 869-883 no month for reference. |
Continuations (1)
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Number |
Date |
Country |
Parent |
815686 |
Dec 1991 |
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