Claims
- 1. A device for providing a plurality of individually controlled electron beams, comprising:
- (a) a backing structure of a semiconductive material of a first conductivity type;
- (b) means defining an electron beam receiving generally planar area spaced a selected distance from said backing structure;
- (c) a matrix array of individually addressable electron beam generating means positioned between said backing structure and said planar area;
- (d) electrical drive means for energizing selected ones of said electron beam generating means of said matrix array; and
- (e) electrical connections for each of said electron beam generating means extending through said backing structure and fabricated of a semiconductive material of a second conductivity type opposite the conductivity type of said first-mentioned semiconductive material.
- 2. A device according to claim 1 wherein said matrix array of individually addressable electron beam generating means comprises a matrix array of individually addressable cathodes positioned between said backing structure and said planar area.
- 3. A device according to claim 2 wherein each of said cathodes includes:
- (a) an electrically conductive base at said backing structure having one or a multitude of spaced apart electron emitting tips projecting therefrom and connected to a respective electrical connection;
- (b) an electrically conductive gate positioned adjacent said tips to generate and control electron emission therefrom, said gate including apertures through which electrons emitted by said tips pass; and
- (c) a first electrical insulating layer electrically separating said base from said gate.
- 4. A device according to claim 2 wherein said first conductivity type is an n type and said second conductivity type is a p type, said electrical drive means reverse biasing a selected pn junction to be defined therebetween to provide electrical energy to the respective cathodes.
- 5. A device for providing a plurality of individually controlled electron beams, comprising:
- (a) a backing structure of a semiconductive material of an n conductivity type;
- (b) a generally planar area for receiving said electron beams;
- (c) matrix array of individually addressable cathodes positioned between said backing structure and said planar area to provide said beam of electrons each of said cathodes including:
- 1. an electrically conductive base at said backing structure having one or a multitude of spaced apart electron emitting tips projecting therefrom;
- 2. an electrically conductive gate positioned adjacent said tips to generate and control electron emission therefrom, said gate including apertures through which electrons emitted by said tips pass; and
- 3. a dielectric insulating layer electrically separating said base from said gate;
- (d) electrical drive means for supplying electrical energy to selected cathodes of said array;
- (e) support means for maintaining said backing structure and said planar area in a spaced apart and hermetically sealed relationship relative to one another, the volume defined therebetween evacuated relative ambient pressure; and
- (f) electrical connections extending through said backing structure for each of said cathodes, each of said electrical connections being of a p type conductive section, a reverse bias pn junction being formed between the p and n conductivity materials to electrically isolate each p type conductive section from adjacent n type conductive sections of said backing to thereby provide an insulation barrier.
Parent Case Info
This is a continuation of application Ser. No. 891,853, filed July 30, 1986, now U.S. Pat. No. 4,857,799.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
4451759 |
Heyniseh |
May 1984 |
|
4857799 |
Spindt et al. |
Aug 1989 |
|
Continuations (1)
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Number |
Date |
Country |
Parent |
891853 |
Jul 1986 |
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