Claims
- 1. A process for producing a Group III--V compound semiconductor represented by the general formula In.sub.x Ga.sub.y Al.sub.z N wherein x+y+z=1, 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1, which comprises forming the semiconductor on a support member having a SiC layer which is obtained by converting a graphite base material into SiC, wherein the thickness of the layer converted into SiC is at least 500 .mu.m.
- 2. A process for producing a Group III--V compound semiconductor represented by the general formula In.sub.x Ga.sub.y Al.sub.z N wherein x+y+z=1, 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1, which comprises forming the semiconductor on a support member having a layer of a graphite-SiC composite which is obtained by converting at least a surface layer part of a graphite base material into SiC, wherein the thickness of the layer converted into SiC is at least 500 .mu.m.
- 3. The process according to claim 1, wherein the surface roughness of said member is not more than 20 .mu.m.
- 4. The process according to claim 2, wherein the surface roughness of said member is not more than 20 .mu.m.
- 5. The process according to claim 1, wherein the thickness of the layer converted into SiC is not less than 800 .mu.m.
- 6. The process according to claim 2, wherein the thickness of the layer converted into SiC is not less than 800 .mu.m.
- 7. The process according to claim 1, wherein the thickness of the layer converted into SiC is not less than 1000 .mu.m.
- 8. The process according to claim 2, wherein the thickness of the layer converted into SiC is not less than 1000 .mu.m.
- 9. The process according to claim 1, wherein said member is a support for a semiconductor substrate which is exposed to conditions for producing the compound semiconductor.
- 10. The process according to claim 2, wherein said member is a support for a semiconductor substrate which is exposed to conditions for producing the compound semiconductor.
Priority Claims (1)
Number |
Date |
Country |
Kind |
7-295433 |
Nov 1995 |
JPX |
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Parent Case Info
This application is a divisional of application Ser. No. 08/749,008, filed on Nov. 14, 1996, now abandoned the entire contents of which are hereby incorporated by reference.
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Divisions (1)
|
Number |
Date |
Country |
Parent |
749008 |
Nov 1996 |
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