The present invention relates to a keyboard device, and more particularly to a membrane switch for a keyboard device.
As known, a keyboard circuit of a keyboard device mainly comprises plural membrane switches and a processor. Generally, the processor of the keyboard device determines whether a specified membrane switch is pressed and triggered by the user according to the result of judging whether an electric signal is transmitted through the membrane switch. Normally, in case that the membrane switch is turned off, the electric signal cannot be transmitted through the membrane switch. Since no electric signal transmitted through the membrane switch is detected, the processor determines that the membrane switch has not been pressed and triggered. Under this circumstance, the key signal is not generated.
However, since plural membrane switches are densely arranged on the same keyboard circuit, some drawbacks occur. For example, the signal lines connected with a specified membrane switch are possibly interfered by the signal lines that are connected with the adjacent membrane switches. When the adjacent membrane switches are pressed and triggered, a small amount of interference electric signal is possibly transmitted through the specified membrane switch even if the specified membrane switch is not pressed and triggered. Due to the interference electric signal, the processor may misjudge that the membrane switch is triggered. Consequently, even if the membrane switch is not pressed, the processor generates the corresponding key signal. This is also called as a ghost key phenomenon.
For avoiding the ghost key phenomenon, the keyboard device is further equipped with plural diodes. Each diode is located near the corresponding membrane switch. Since the current is allowed to flow in one direction through the arrangement of the diodes, the above-mentioned ghost key phenomenon can be avoided. However, the arrangement of the diodes near the corresponding membrane switches still has some drawbacks. For example, since the diode is not cost-effective, the cost of the keyboard device is increased. In addition, the assembling difficulty is increased.
For solving the drawbacks of the conventional technologies, the present invention provides a membrane switch for a keyboard device. The structure of the membrane switch is specially designed. When the membrane switch is pressed and triggered, a conductive contact surface in the membrane switch is defined. The conductive contact surface is related to a resistance value. According to the resistance value, a processor of the keyboard device judges whether the membrane switch is indeed pressed.
In accordance with an aspect of the present invention, a membrane switch is provided. The membrane switch includes a first circuit layer, a second circuit layer and a spacer layer. The first circuit layer includes a first conductive pattern. The second circuit layer includes a second conductive pattern. The second circuit layer is aligned with the first circuit layer. The second conductive pattern is aligned with the first conductive pattern. The second conductive pattern and the first conductive pattern have different shapes. The spacer layer is arranged between the first circuit layer and the second circuit layer. The spacer layer includes a perforation. The perforation is aligned with the first conductive pattern and the second conductive pattern. After the first conductive pattern is penetrated through the perforation and the first conductive pattern is contacted with the second conductive pattern, a conductive contact surface is formed between the first conductive pattern and the second conductive pattern, and the conductive contact surface has a resistance value corresponding to an area of the conductive contact surface. When a current flows from the first conductive pattern to the second conductive pattern through the conductive contact surface, a key signal is generated according to the resistance value.
In an embodiment, the first circuit layer further includes a first conductor line, and the second circuit layer includes a second conductor line. The first conductor line is electrically connected with the first conductive pattern. The second conductor line is electrically connected with the second conductive pattern.
In an embodiment, the membrane switch is electrically connected with a processor, and the processor judges whether the key signal is generated according to the resistance value.
In an embodiment, the area of the conductive contact surface and the resistance value of the conductive contact surface are negatively correlated with each other.
In an embodiment, when the second conductive pattern is contacted with and covered by the first conductive pattern, the conductive contact surface is formed.
In an embodiment, the second conductive pattern includes a first conduction region, a separation region and a second conduction region. The first conduction region and the second conduction region are aligned with each other. The separation region is arranged between the first conduction region and the second conduction region. The first conduction region and the second conduction region are separated from each other by the separation region.
In an embodiment, the first conduction region, the second conduction region and the separation region are aligned with the first conductive pattern.
In an embodiment, when the first conductive pattern is contacted with the second conductive pattern, the first conduction region, the separation region and the second conduction region of the second conductive pattern are electrically contacted with and covered by the first conductive pattern, and the conductive contact surface is formed. Consequently, the first conduction region and the second conduction region are electrically connected with each other through the conductive contact surface.
In an embodiment, when the area of the conductive contact surface is equal to a first area, the resistance value is equal to a first resistance value. When the area of the conductive contact surface is equal to a second area, the resistance value is equal to a second resistance value.
In an embodiment, the second area is larger than the first area, and the second resistance value is larger than the first resistance value.
In an embodiment, if the resistance value is smaller than or equal to the first resistance value, the key signal is generated.
In an embodiment, if the resistance value is larger than or equal to the second resistance value and the resistance value is smaller than the first resistance value, the key signal is generated.
In an embodiment, when the area of the conductive contact surface is equal to the first area, the resistance value is 5 k ohms. When the area of the conductive contact surface is equal to the second area, the resistance value is 2.5 k ohms.
In accordance with another aspect of the present invention, a key structure with a membrane switch is provided. The key structure includes a base plate, the membrane switch, an elastic triggering element, a keycap and a supporting element. The membrane switch is installed on the base plate. The membrane switch includes a first circuit layer, a second circuit layer and a spacer layer. The first circuit layer includes a first conductive pattern. The second circuit layer includes a second conductive pattern. The spacer layer includes a perforation. The second circuit layer is aligned with the first circuit layer. The spacer layer is arranged between the first circuit layer and the second circuit layer. The second conductive pattern is aligned with the first conductive pattern. The second conductive pattern and the first conductive pattern have different shapes. The perforation is aligned with the first conductive pattern and the second conductive pattern. The elastic triggering element is located over the membrane switch and aligned with the first conductive pattern and the second conductive pattern. The keycap is located over the elastic triggering element. The first conductive pattern and the second conductive pattern are covered by the keycap. The supporting element is connected with the keycap and the base plate.
The above objects and advantages of the present invention will become more readily apparent to those ordinarily skilled in the art after reviewing the following detailed description and accompanying drawings, in which:
The present invention will now be described more specifically with reference to the following embodiments and accompanying drawings.
In an embodiment, the membrane switch 1 comprises a first circuit layer 10, a second circuit layer 20 and a spacer layer 30. The first circuit layer 10 comprises at least one first conductive pattern 11 and a first conductor line 12. The first conductor line 12 is electrically connected with the at least one first conductive pattern 11. The second circuit layer 20 comprises at least one second conductive pattern 21 and a second conductor line 22. The second conductor line 22 is electrically connected with the at least one second conductive pattern 21. The spacer layer 30 comprises at least one perforation 31. The second circuit layer 20 and the first circuit layer 10 are aligned with each other. The position of each second conductive pattern 21 is aligned with the position of the corresponding first conductive pattern 11. Moreover, the shape of the second conductive pattern 21 is different from the shape of the first conductive pattern 11. The spacer layer 30 is arranged between the first circuit layer 10 and the second circuit layer 20. Each perforation 31 of the spacer layer 30 is aligned with the corresponding first conductive pattern 11 and the corresponding second conductive pattern 21. Consequently, the first conductive pattern 11 is allowed to be penetrated through the perforation 31 and contacted with the corresponding second conductive pattern 21.
In an embodiment, the second conductive pattern 21 comprises a first conduction region 211, a separation region 213 and a second conduction region 212. The first conduction region 211 and the second conduction region 212 are aligned with each other. The separation region 213 is arranged between the first conduction region 211 and the second conduction region 212. In addition, the first conduction region 211 and the second conduction region 212 are separated from each other by the separation region 213. Both of the first conduction region 211, the separation region 213 and the second conduction region 212 are aligned with the first conductive pattern 11.
After the first conductive pattern 11 is penetrated through the corresponding perforation 31, the corresponding second conductive pattern 21 is contacted with and covered by of the first conductive pattern 11. Consequently, a conductive contact surface 40 (see
The membrane switch 1 is electrically connected with a processor 50 of the keyboard device. Moreover, the processor 50 is electrically connected with the first conductor line 12 of the first circuit layer 10 and the second conductor line 22 of the second circuit layer 20. The processor 50 is used for detecting the resistance value of the membrane switch 1 and generating the key signal S according to the resistance value of the membrane switch 1.
Please refer to
The keycap 80 is located over the first circuit layer 10. In addition, the first conductive pattern 11 and the second conductive pattern 21 are covered by the keycap 80. The base plate 60 is located under the second circuit layer 20. The supporting element 90 is arranged between the keycap 80 and the base plate 60. The keycap 80 and the base plate 60 are connected with each other through the supporting element 90. The elastic triggering element 70 is arranged between the keycap 80 and the first conductive pattern 11. In addition, the elastic triggering element 70 is aligned with the first conductive pattern 11. The processor 50 is electrically connected with the first circuit layer 10 and the second circuit layer 20. The stack structure of the membrane switch 1 and the operations of the membrane switch 1 have been mentioned above, and not redundantly described herein.
The formation of the conductive contact surface 40 when the membrane switch 1 is triggered will be described as follows.
When the keycap 80 is pressed down, the first conductive pattern 11 is correspondingly moved downwardly. After the first conductive pattern 11 is penetrated through the corresponding perforation 31 and the corresponding second conductive pattern 21 is contacted with and covered by of the first conductive pattern 11, the conductive contact surface 40 is formed between the first conductive pattern 11 and the second conductive pattern 22. Consequently, the membrane switch 1 is triggered. As mentioned above, the area of the conductive contact surface 40 is related to the resistance value. The larger area of the conductive contact surface 40 represents a smaller resistance value. While a pressing force is applied to the keycap 40, the keycap 40 is moved downwardly to a travel distance, the elastic triggering element 70 is subjected to deformation, and the membrane switch 1 is triggered. In case that the magnitude of the pressing force or the travel distance is changed, the area of the conductive contact surface 40 is correspondingly changed. For example, as the pressing force or the travel distance is increased, the area of the conductive contact surface 40 is increased, and the resistance value is decreased. In contrast, as the pressing force or the travel distance is decreased, the area of the conductive contact surface 40 is decreased, and the resistance value is increased. In case that the keycap 80 is not pressed down and the membrane switch 1 is not triggered, the conductive contact surface 40 is not formed. Under this circumstance, the resistance value is very large, and thus no current flows through the conductive contact surface 40.
In the situation of
In the situation of
Please refer to
In case that the processor 50 as shown in
On the other hand, if the resistance value is in the range between the second resistance value and the first resistance value, the processor 50 also generates the key signal S. As mentioned above, the area of the conductive contact surface 40 is related to the magnitude of the pressing force. Consequently, if the area of the conductive contact surface 40 is smaller than the second area 40b but larger than the first area 40a, the resistance value is larger than the second resistance value but smaller than the first resistance value. In case that the area of the conductive contact surface 40 is equal to the second area 40b (i.e., the maximum contact area), the resistance value is equal to the second resistance value (i.e., the minimum resistance value). As long as the resistance value lies in the range between the second resistance value and the first resistance value, or if the resistance value is larger than or equal to the second resistance value and the resistance value is smaller than the first resistance value, the processor 50 judges that the keycap corresponding to the membrane switch 1 is pressed down and the membrane switch 1 is triggered. Consequently, as shown in
For example, if the area of the conductive contact surface 40 is equal to the first area 40a, the resistance value is 5 k ohms; and if the area of the conductive contact surface 40 is equal to the second area 40b, the resistance value is 2.5 k ohms. Since the second area 40b is larger than the first area 40a, the resistance value (i.e., 2.5 k ohms) corresponding to the second area 40b is smaller than the resistance value (i.e., 5 k ohms) corresponding to the first area 40a.
In case that the membrane switch 1 is possibly suffered from the ghost key phenomenon, the processor 50 detects that a small amount of current flows through the first conductor line 12 of the first circuit layer 10 and the second conductor line 22 of the second circuit layer 20. Since the second conductive pattern 21 is not electrically contacted with and covered by the first conductive pattern 11, the conductive contact surface 40 is not formed. Under this circumstance, the resistance value is very large. That is, the resistance value is larger than the first resistance value. Since the resistance value is larger than the first resistance value or much larger than the general resistance value, the processor 50 judges that the membrane switch 1 is not turned on. Under this circumstance, the key signal S is not generated. Consequently, the ghost key phenomenon can be avoided.
In this embodiment, the shape of the first conductive pattern 11′ and the shape of the second conductive pattern 21′ are different. For example, the first conductive pattern 11′ has a square shape, and the second conductive pattern 21′ has a polygonal shape or an irregular shape.
While the invention has been described in terms of what is presently considered to be the most practical and preferred embodiments, it is to be understood that the invention needs not be limited to the disclosed embodiments. On the contrary, it is intended to cover various modifications and similar arrangements included within the spirit and scope of the appended claims which are to be accorded with the broadest interpretation so as to encompass all modifications and similar structures.
Number | Date | Country | Kind |
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111144021 | Nov 2022 | TW | national |