BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to RF MEMS microwave components and more particularly to integration of MEMS structures with signal supporting forms to develop MEMS-based RF components such as a MEMS waveguide switch. The present invention relates to a method of construction and method of operation.
2. Description of the Prior Art
Communication, wireless, and satellite payload systems employ sophisticated switch matrices to provide signal routing and redundancy schemes to improve the reliability of both receive and transmit subsystems. The two types of switches that are currently being used are mechanical switches and solid state switches. Mechanical (coaxial and waveguide) switches show good RF performance up to couple of hundred gigahertz with high power handling capability. However, they are heavy and bulky as they employ motors for the actuation mechanism. Solid state switches on the other hand are relatively small in size but they show poor RF performance especially in high frequency applications (40-200 GHz) and they are limited in RF power handling. In some applications, PIN diode waveguide switches have been used. They utilize incorporated PIN diodes inside the waveguide to create ON and OFF states. While these switches are small in size, they have very limited bandwidth, exhibit poor RF performance, and consume relatively high DC power. References to the term MEMS in this application refer to a microelectromechanical system.
RF MEMS switches are good candidates to substitute the existing mechanical switches due to their good RF performance and miniaturized dimensions. However, their high actuating voltage and low power handling is still a major obstacle. The “Stand off voltage” or “self biasing” property of electrostatic MEMS switches which is defined as the maximum RF voltage before pulling the beam down, is the main limiting factor in this regard.
SUMMARY OF THE INVENTION
It is an object of the present invention to provide a MEMS-based RF component having a form that supports a signal in combination with a MEMS structure having at least two positions that can be used to control the signal. It is a further object of the present invention to provide a MEMS-based RF component that can replace existing components in both the high frequency range, low frequency range, high power range and low power range. The high frequency range is considered to be from 40 to 200 GHz. Integrated MEMS actuators replace the existing motors of mechanical waveguide and coaxial switches. It is a further object of the present invention to provide MEMS-based RF components that have a small size, light weight, high power handling and good RF performance when compared to previous devices.
A MEMS-based RF component comprises a form, the form being a three dimensional waveguide. The form is capable of supporting a signal and has at least one of an input and output. The form has a MEMS structure at least partially therein, the MEMS structure being constructed to control an RF signal within the form.
A method of constructing a MEMS-based RF component having a three dimensional waveguide for supporting a signal and a MEMS structure at least partially therein, the method comprising constructing a base plate and a top cover that is sized and shaped to fit on said base plate, incorporating a MEMS structure in one of the base plate and top cover and affixing the cover to the plate to form the component.
A method of operating a MEMS-based RF component having a three dimensional waveguide for said MEMS structure for supporting a signal and a MEMS structure at least partially therein with a controller, the method comprising operating said controller to move the MEMS structure to control a signal in said component.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a schematic perspective view of a MEMS-based waveguide switch;
FIG. 2 is a graph of the simulation results for the switch of FIG. 1;
FIG. 3
a is a schematic perspective view of a rectangular waveguide structure having transformers at an input and output;
FIG. 3
b is a schematic side view of the switch of FIG. 3a;
FIG. 4
a is a top of a disassembled waveguide structure;
FIG. 4
b is a bottom view of the waveguide structure;
FIG. 4
c is a perspective view of the waveguide structure;
FIG. 5
a is a schematic perspective view of a connection of a waveguide switch into a planar circuit;
FIG. 5
b is a schematic side view of the switch of FIG. 5a;
FIG. 6 is a schematic perspective view of a single-pole double-throw MEMS-based waveguide switch;
FIG. 7 is a schematic perspective view of a MEMS-based waveguide C-switch;
FIG. 8 is a graph of the measured results of the switch shown in FIG. 6;
FIG. 9 is a schematic perspective view of a switch matrix made up of MEMS-based on MEMS-based waveguide switches;
FIG. 10 is a schematic perspective view of RF MEMS waveguide switch integrated with a planar circuit;
FIG. 11 is a perspective view of an RF MEMS coaxial switch;
FIG. 12 is a schematic perspective view of the switch of FIG. 10 within a bottom plate and top cover;
FIG. 13 is a schematic perspective view of a MEMS-based waveguide switch having plates that move upward or downward;
FIG. 14 is a partial schematic end view of the switch of FIG. 13;
FIG. 15 is a side view of the switch of FIG. 14;
FIG. 16 is a schematic side view of a waveguide having MEMS actuators in an OFF position;
FIG. 17 is a schematic end view of the embodiment shown in FIG. 16;
FIG. 18 is a schematic side view of the embodiment shown in FIG. 16 with the actuators in an ON position;
FIG. 19 is a schematic end view of the embodiment shown in FIG. 18;
FIG. 20 is a top view of a bi-layer curled actuator;
FIG. 21 is a top view of an entire actuator set of bi-layer curled actuators in an ON state;
FIG. 22 is a schematic perspective view of bi-layer curled actuators in an OFF state.
DESCRIPTION OF A PREFERRED EMBODIMENT
FIG. 1 shows a detailed description of the preferred embodiment of the present invention. A switch 2 consists of a waveguide 4 and incorporated MEMS structure 6. The waveguide 4 could be in any type but FIG. 1 describes a single ridge waveguide configuration. The waveguide is constructed from two detached parts of the top cover 8 and bottom plate 10 to facilitate the MEMS structure 6 integration into the waveguide 4. Top cover 8 includes the ridge waveguide channel 12 and the bottom plate 10 incorporates the MEMS structure 6. DC bias of the MEMS structure 6 is provided through DC pins 14 that are wire-bonded 16 to actuators 18. A DC voltage is applied to move the actuators between the OFF and ON states. The electric field is mostly concentrated in a gap 20 between a ridge 22 and the bottom plate 10 where the MEMS structure 6 is located. The MEMS structure 6 can be based on electrostatic or thermal actuators. The requirement is to provide a good short circuit between the ridge 22 and the bottom plate 10 of the waveguide 4 for the OFF state and to remove entirely from the signal path to a position coinciding with an inner wall of the waveguide 4 for the ON state.
FIG. 2 shows the simulation results for the invention presented in FIG. 1. The number of the actuators is based on the required isolation.
To integrate the present invention in a standard rectangular waveguide system, another embodiment is illustrated in FIGS. 3a and 3b. The same reference numerals are used in FIGS. 3a and 3b as those used in FIG. 1 for those parts that are identical. A switch 24 uses a quarter wavelength transition 26 to any standard waveguide. FIGS. 4a, 4b and 4c show the fabricated structure for the satellite Ku band application and using well known machining processes. For higher frequency range and millimeter wave applications, the structure is fabricated using MEMS process on wafer level. The top cover 8 of the waveguide 4 is fabricated on one wafer using deep RIE and then followed by gold plating. Another wafer is used to fabricate the MEMS unit 6 monolithically with the bottom plate of the waveguide 10. The wafers are bonded together during the packaging stage.
Although this technique simplifies the integration with standard waveguide systems, it limits the bandwidth. FIGS. 5a and 5b show another preferred embodiment to integrate the invention into a planar circuit 28. To transform the signal from waveguide switch 2 (shown in FIG. 1) to a planar circuit 28, a ridge waveguide to coplanar waveguide line transition 30 is used. Line 32 is a coplanar-waveguide.
FIG. 6 shows another embodiment 1 of the present invention in the form of single-pole double-throw switch 36. A T junction 38 is used to join the two output branches 40. MEMS structures (42 and 44) provides a short circuit to turn OFF one of the output ports (46 or 48) at any given time. When one output port 46 is on the other output port is off and vice-versa. This short is transferred to the T junction 38 in the form of open circuit with no effect on the transmitted signal from input 50 to the other output port (48 or 46). Transformers 52 are located at the input 50 and output ports 46 and 48.
FIG. 7 illustrates another configuration of the present invention in the form of a transfer switch 54 (C-type). This switch is designed for satellite Ku band applications. However, the switch 54 can be easily extended to higher frequency range. The switch is based on a multi-port waveguide 56 that incorporates four MEMS structures 58a, 58b, 58c, 58d. The MEMS structures are integrated inside the waveguide 56 under the ridge (not shown in FIG. 7) where electric field has its maximum intensity. λ/4 transition to ridge waveguide is utilized at the input ports 60a, 60b. Two ridge waveguide T-junctions are used to connect the input lines (not shown) to two neighbouring ports. The transfer switch has two operational states. In the state I, ports 60a-60c and 60b-60d are connected and the MEMS structures of 58c and 58b are providing a good short circuit at the frequency range of interest. This results in high isolation between ports 60a and 60d and between ports 60b and 60c. An extensive effort is made to design the ridge waveguide discontinuities and the junctions in a way that the transferred impedance of the shunt irises acts as open circuit and does not interfere with the transmitted signal from port 60a to port 60c and from port 60b to port 60d. Meanwhile, the other MEMS structures 58a and 58d are in a position to coincide with the inner wall of the waveguide 56 providing a perfect ridge waveguide transmission line. The operation of the switch in the state II is very similar to that of state I except that there are through paths between ports 60a-60d and between 60b-60c and MEMS structures of 58a and 58d are shorting the waveguide.
FIG. 8 shows the measured results for the transfer switch prototype working at satellite Ku band.
Another preferred embodiment is shown in FIG. 9. This shows a switch matrix 62 that is based on the present invention. The entire switch matrix can be fabricated on two detached parts of a bottom plate 64 and a top cover 66. The interconnect lines can be either waveguides 68 or CPW lines 32 (see to FIGS. 5a and 5b). For millimeter wave applications, the bottom plate 64 incorporates the MEMS structures 6 and/or the planar circuitry 28 (see FIGS. 5a and 5b), and the top cover 66 includes the waveguide channels. Each part can be fabricated on a separate wafer and then bonded together. The matrix 62 is constructed from several C-switches connected together.
FIG. 10 is a schematic perspective view of a switch matrix 69 having a plurality of switches that are essentially the same as the switches in FIG. 9. The MEMS waveguide switches are integrated with a planar circuit 71 that can be coplanar waveguides, microstrip or any other type of microwave integrated circuit.
Although the present invention has been fully described by way of example in connection with a preferred embodiment thereof, it should be noted that various changes and modifications will be apparent to those skilled in the art. Therefore, unless otherwise stated such changes and modifications depart from the scope of the present invention, they should be construed as being included therein. For example, FIG. 11 shows extension of the idea to another type of switch called an RF MEMS coaxial switch 70. In this embodiment, the MEMS structure 72 is incorporated in the ground shielding of the coax 74 and do not interfere with the signal for the ON state. By activating the MEMS structure 72, a signal line 74 is shorted to the ground shielding 76-78 and results in the OFF state of the switch. This idea can be realized by fabricating the switch in three different detached parts 76, 78, 74 and then integrating them. Alternatively, the idea presented in FIG. 12 can be used to realize the switch. In this configuration, the switch 70 can be realized by fabricating the bottom plate 80 and the MEMS structure 72 on one wafer and the top cover 82 and the central signal line 84 on another wafer. A low k dielectric 86 can be used to separate the signal line and the ground shielding. Then, during the packaging stage, the wafers are bonded together. The RF MEMS coaxial switch can be also extended to multi port MEMS coaxial switches and switch matrices (similar to the multi port MEMS waveguide switches and switch matrices).
In FIGS. 13, 14 and 15, there is shown a switch 92 having a ridge waveguide 4 with a ridge 22 and a plurality of actuators 94 on a bottom plate 10. The switch 92 is similar to the switch 2 shown in FIG. 1 except that the actuators of the switch 92 do not pivot but move horizontally upward and downward. As shown in FIGS. 14 and 15, the actuators 94 are in the retracted or ON state. The actuators can be moved upward to provide a short between the top cover 4 and the bottom plate 10, thus moving the switch to the OFF state. As an alternative, the actuators 94 can be controlled to move closer to or further from the top cover 4 resulting in a controllable capacitive loading of the waveguide without shorting. The capacitive loading feature of the waveguide can be used as a variable inline capacitor to design a phase shifter or other components.
In FIGS. 16 and 17, there is shown a schematic side view and end view respectively of a waveguide 4 containing a post 96 with actuators 18 in the OFF state. In FIGS. 18 and 19, the same reference numerals are used and the actuators 18 are in an ON state. By moving the actuators to the position shown in FIGS. 16 and 17, the post 96 is shorted to the lower side of the waveguide and the effect of the discontinuity or post is changed. This could be from a capacitive to inductive effect depending on the size of the post. The embodiment shown in FIGS. 16 to 19 has great potential for use as a tuning element for the filters.
In FIGS. 20 to 22 there are shown bi-layer curled actuators that are designed and fabricated using the Poly MUMPs surface machining process. Thermally plastic deformation assembly (TPDA) method is for the initial assembly of the beams. Afterwards, electrostatic voltage is used to roll the beams up and down. In FIG. 20, a fabricated actuator 98 is composed of 1.5 μm thick poly silicon and 0.5 μm gold layer on top. The beam is about 100 μm in width and 1,500 μm in length. Initially, after the release, the bimorph of gold and poly silicon assumes a planar geometry as shown in FIG. 21. When exposed to higher temperature (approximately 200° for ten minutes), the metal yields and upon the relaxation, a new stress mismatch results in a deformed beam toward the gold layer (top layer). This results in a curled beam or actuator as shown in FIG. 22. Another poly silicon layer (poly 0) under the beam is used as the electrode layer. To prevent the beam from collapsing to the bottom electrode, two stopper steps at both side edges of the beams are utilized. At the down position, these two steps contact the lower surface of the chip and stop the beam from unwanted collapse to the electrodes underneath. A voltage of approximately 20 volts seems to be required to roll the beam down. Upon the application of DC voltage, the beam starts rolling down until the entire beam coincides with the bottom surface of the chip. The entire actuator set consists of four rows of electrostatic actuators with each row including four bi-layer beams acting as shunt inductive irises in the OFF state. Application of four separate beams rather than a single plate helps to achieve better isolation in practice. The use of separate actuation mechanisms increases overall contact points and hence reduces the overall contact resistance. All of the actuators and the rest of the area of the chip are covered with gold layer to reduce the loss of the silicon base substrate.
The present invention can be used in high frequency devices, low frequency devices, high power devices and low power devices. The high frequency devices include microwave, milliliter, terahertz frequencies and beyond.
With the present invention, a MEMS structure is integrated with a three dimensional waveguide for RF applications. While actuators with specific types of MEMS structures are described, the invention is not limited thereto. Many types of actuators and MEMS structures will be suitable. The actuator can be a plate or a rod or strip or other convenient shape. In some embodiments, the actuators cause a short circuit between the top and bottom wall of a waveguide. However, it is not necessary in all applications of the invention for the actuators to cause a short circuit. In some applications, moving the actuators inside the waveguide will interfere sufficiently with a propagating wave in a desired manner. While the actuators have been described herein as having two positions, in some applications of the invention, more than two positions will be desirable. The actuators can be integrated in the bottom wall of a component or they can be integrated elsewhere inside the waveguide. The actuators can be located in a base plate or in a top cover and can be located on a ridge or on the side walls of a waveguide in some applications.
A ridge waveguide can be a single ridge waveguide or it can be a double ridge waveguide. The waveguide can be coaxial, planar, low temperature cofired ceramics, coplanar, rectangular or other shape as long as it is a three dimensional waveguide that will support an RF signal. The actuators can be electrostatic, thermal, magnetic, plastic deformation type or other suitable types.
Patent Grant
7292125
