For a more complete understanding of the invention, reference is now made to the following descriptions taken in conjunction with the accompanying drawing, in which:
Referring initially to
The projectile, generally designated 100, is designed to be projected from a gun, e.g., a tank gun or field artillery piece (not shown) along a direction indicated by a bold line 110. As those skilled in the artillery art well understand, the range of the projectile 100 is significantly increased by causing it rotate as it is projected. Accordingly, the projectile 100 rotates about an axis of rotation represented by a broken line 120. In
The projectile 100 is illustrated as containing a MEMS S&A device 140 having launch and rotation interlocks and constructed according to the principles of the present invention.
Two objectives are paramount in the context of explosive weapons in general: that they explode as they are supposed to when they are supposed to and that they do not explode before then. In practical terms, this means that an S&A device should reliably arm a weapon during or after launch, but not before then. Thus, while an S&A device should respond to valid launch conditions (e.g., accelerations), false conditions (e.g., accelerations experienced during an inadvertent dropping of the weapon during handling) should not produce a similar response. It is for this reason that being required to respond to multiple precedent environmental conditions is preferable to responding to only one. Thus, an S&A device that requires both launch acceleration and rotation conditions to occur for arming is less likely to respond to false conditions. Furthermore, a MEMS S&A device that takes advantage of the miniaturization potential afforded MEMS devices and also responds to both launch acceleration and rotation has a substantial advantage over S&A devices of the prior art.
Military specifications, therefore, may require that an S&A possess at least two environmental interlocks. Thus, it may be desirable to have a micromachined S&A device that responds to more than one environmental condition. It is also desirable to have a manufacturing method capable of yielding a micromachined S&A device that responds to more than one environmental condition.
Turning now to
The MEMS S&A device 140 includes a body 200. A support structure (not shown), sometimes called a “handle,” may underlie the body 220. The body 200 has a substrate and a top layer located over the substrate. Typically, a thin, intermediate layer (not shown) interposes the top layer and the substrate. The top layer and substrate may be silicon (Si), and the intermediate layer may be silicon oxide (SiO2). In this configuration, the top layer is known as a Silicon-On-Insulator, or SOI, layer. Being a plan view,
A hole 210 may be located in the body 200. The hole 210 is proximate an axis of rotation and thus may serve as a mounting hole for the MEMS S&A device 140 when the MEMS S&A device 140 is mounted in a projectile.
A serpentine channel 220 is formed in the layer over the substrate to define a shuttle 230. The serpentine channel 220 includes locks (one of which being designated 222) into which corresponding fins (one of which being designated 234) of the shuttle 230 project. Out-of-plane stops (one of which being designated 224) are associated with the locks 222 and serve a function that will be described below.
The serpentine channel 220 is not continuous about the shuttle 230. Instead, portions (one of which being designated 232) of the top layer span the serpentine channel 220 to support the shuttle 230 and act as springs therefor. For this reason, these portions will henceforth be termed “springs” 232.
Although not shown in
Latch springs (one of which being designated 236) project from the shuttle 230 and engage with stops (one set of which being designated 226). As will be described below, the latch springs 236 and stops 226 cooperate to prevent the shuttle 230 from retracting from its final armed condition once the shuttle 230 assumes that condition.
A switch 228 and spring contacts 238 cooperate to complete an electrical circuit when the shuttle 230 is in its final armed condition. However, being that
Turning now to
The depth of the cavity 340 is at least sufficient to allow (1) the fins 234 to drop below the locks 222, (2) the shuttle 230 to move laterally away from the hole 210 and (3) the fins 234 engage the out-of-plane stops 224.
Acceleration upward (as
Projectiles typically experience a very large acceleration (10,000 to 80,000 g) for a very short time (few msec) and with a time dependence well represented by the half-sine-wave curve
and that the distance traveled is given by
Rifling grooves in the bore of the gun from which the projectile is fired impart spin to the projectile. Defining the parameter β as the twist in radians per meter, the rotation angle, angular velocity, and angular acceleration are given by
θ=βd,
{dot over (θ)}=βν,
{umlaut over (θ)}=βα. (5)
For the MlAl tank cannon, the twist is of the order of one turn over the three-meter barrel length, giving β≈2π radians/3meter≈2rad/m.
The inertial force pushing the shuttle 230 downward is
F
z
=m
shuttle·α. (6)
Since, for the MEMS S&A device 140 of
If the springs are fixed-fixed beams (with dimensions w, h and l, the restoring force contains a nonlinear term proportional to the cube of the displacement which becomes significant when the displacement is comparable to the “width” of the beam measured in the direction of displacement. The advantage of the nonlinear spring is that it can limit travel and eliminate the need for mechanical stops.
The beam bending force expressions for z and r displacements (assuming two pairs of springs 234) are, respectively,
the single real solution of the cubic equation is given by
If the thickness of the top layer 310 is less than 60 μm and the spacing of the serpentine channel 220 around the fins 234 is greater than 5 μm, this sequence of displacements places the top surface of the fins 234 below the bottom surface of the remainder of the top layer 310 and unlocks the shuttle 230. The shuttle 230 is then free to move radially outward towards switch closure and latching.
The local stress at the ends of each beam due to the z displacement can be estimated using the relation
Inserting the values of the example gives S/E<0.007. For r displacements the local stress is a factor of three small. Comparing these values with the fracture stress for silicon of 0.011E, the springs 232 will not fracture at launch.
Now, the operation of an exemplary MEMS S&A device as it transitions from an initial safe and unarmed condition into an intermediate unarmed condition an thereafter into a final armed condition will be described. Accordingly, turning now to
Turning now to
Turning now to
Turning now to
Having discussed an exemplary MEMS S&A device configured for use in a projectile, attention will be turned to a MEMS S&A device conf igured for use in a rocket. Compared to projected munitions, a rocket experiences an acceleration that is orders of magnitude smaller and applied over a time interval orders of magnitude longer. Consequently, the S&A devices for the two types of munitions should respond to these substantial differences.
Turning now to
Referenced in
The interlocks 510 engage the shuttle 230 when the MEMS S&A device is in its initial safe and unarmed condition. To retract the interlocks 510, a current is passed through electrodes (two of which being designated 520). The current flows through thermal actuator beams (one of which being designated 530) coupled to the electrodes 520, causing the thermal actuator beams 530 to expand. This, in turn, causes a connecting rod 540 to retract, retracting the interlocks 510. Latch springs (one of which being designated 550) retain the interlocks 510 in their retracted position.
Now, some analysis will be set forth to aid in determining advantageous physical properties for the shuttle 230 and the springs 232. For the analysis, it will be assumed that the rocket undergoes a constant acceleration for 1.14 sec, reaching a velocity of 595 m/sec and a rotational speed of 34 rps. In this example, the MEMS S&A device is required to remain unarmed if a<11 g, and must arm if a>20 g. Arming should occur after the rocket has traveled a distance of 60 m.
It follows from
a=522 m/sec2=53 g
for t<timpulse=1.14 sec, (18)
that
{umlaut over (θ)}=29.8 rev/sec2=187 rad/sec2 (19)
and that the arming distance corresponds to an arming time of about 0.5 sec.
The ratio of the normal and radial forces is again given by
Assuming R=3 cm, the force ratio is 0.5 at the arming time of 0.5 sec. Therefore, to have r≧z requires that the width of the springs 232 be slightly less than their height, i.e., the thickness of the top, or SOI, layer.
Because of the relatively small acceleration, it is advantageous to add mass to the shuttle 230 and to use soft springs 232 in order to obtain reasonable shuttle 230 displacements. Mass can be added most easily by increasing the area of the shuttle 230 and by attaching to the shuttle 230 a volume of silicon. It will be assumed that the added silicon has a thickness of 500 μm and that the surface area of the shuttle 230 is 6 mm2. The springs 232 are softened by using six-segment serpentine structures, as shown in
The beam bending force expressions for the z displacements (assuming two pairs of six-segment serpentine springs 232) are given by Equations (9) and (10), modified with a factor of ⅙ and without the stretching term in brackets.
The z and r displacement is then determined by
Assuming A=6 mm2 and measuring z in μm, Equation (22) can be written
Assuming in addition R=3 cm and measuring r in μm, Equation (23) can be written
The specification is that arming must occur if a>20 g. So at 20 g the z displacement must be greater than the thickness h of the shuttle 230. Setting z=h=40 μm and choosing w=30 μm and ttotal=500, Equation (24) requires that l=1820 μm. Inserting these parameter values Equation (24) simplifies to
The expected launch acceleration is 53 g, so the z displacement will reach a constant value of 106 μm on a time scale (roughly 20 msec, see below) set by the natural frequency and the damping of the shuttle 230 structure. (Note that at 1 g the sag is roughly 2 μm.)
Using the rotational acceleration of Equation (19) and the dimensional parameters of the previous paragraph, Equation (25) simplifies to
r=382·t2. (27)
At t=20 msec (the time to reach the maximum z displacement), r=0.15 μm. At t=0.5 sec, r=96 μm. We therefore choose to set the switch contact distance at roughly 80 μm, the latching distance at roughly 100 μm, and the hard stop distance at 120 μm. Note that if there were no hard stop, then at t=1 sec, r would tend toward a displacement of 380 μm and damage the contact springs 232.
The natural frequency for z motion is given by
For the example, fz=353 Hz. One would therefore expect a response time on the order of msec were it not for ringing associated with a discontinuous step in acceleration at launch. Assuming a Q value of less than 10, implies a ring down time Q/πfz of less than 18msec, meaning that z should reach its steady state value before any significant motion in the r direction.
Having described the structure and operation of two exemplary MEMS S&A device embodiments, an exemplary method of manufacturing the same will now be set forth.
The MEMS S&A device may be manufactured by forming a body having a silicon substrate, a silicon oxide layer over the silicon substrate and an SOI layer over the silicon oxide layer. Then, the SOI layer may be patterned and etched to create the movable elements of the MEMS S&A device (e.g., the shuttle and the springs) in the SOI layer, stopping at the silicon oxide layer. A reactive ion etch (RIE) may be used to etch the SOI layer.
Then, the underlying silicon substrate may be backside-patterned and backside-etched to create the cavity under the movable elements of the MEMS S&A device, stopping at the silicon oxide layer. A deep RIE (DRIE) may be used to etch the silicon substrate. Next, the silicon oxide layer may be etched from underneath the movable elements of the MEMS S&A device to free them for movement. Finally, contacts and interconnects may be formed as needed to bring signals into or out of the MEMS S&A device.
Although the present invention has been described in detail, those skilled in the art should understand that they can make various changes, substitutions and alterations herein without departing from the spirit and scope of the invention in its broadest form.
The U.S. Government has a paid-up license in this invention and the right in limited circumstances to require the patent owner to license others on reasonable terms as provided for by the terms of DAAE 30-03-D-1013 awarded by the U.S. Army (Tacom).