The present disclosure generally relates to a metal-and-resin composite and a method for making the metal-and-resin composite.
Many people use portable electronic devices such as mobile phones and personal digital assistants (PDAs). Housings of the portable electronic devices may be made of two or more different materials, such as metal and resin. There is a need to combine metal and resin together.
Implementations of the present technology will now be described, by way of example only, with reference to the attached figures.
It will be appreciated that for simplicity and clarity of illustration, where appropriate, reference numerals have been repeated among the different figures to indicate corresponding or analogous elements. In addition, numerous specific details are set forth in order to provide a thorough understanding of the embodiments described herein. However, it will be understood by those of ordinary skill in the art that the embodiments described herein can be practiced without these specific details. In other instances, methods, procedures and components have not been described in detail so as not to obscure the related relevant feature being described. Also, the description is not to be considered as limiting the scope of the embodiments described herein. The drawings are not necessarily to scale and the proportions of certain parts have been exaggerated to better illustrate details and features of the present disclosure.
Several definitions that apply throughout this disclosure will now be presented.
The term “coupled” is defined as connected, whether directly or indirectly through intervening components, and is not necessarily limited to physical connections. The connection can be such that the objects are permanently connected or releasably connected. The term “comprising,” when utilized, means “including, but not necessarily limited to”; it specifically indicates open-ended inclusion or membership in the so-described combination, group, series, and the like.
A method for making a composite 100 as shown in
A metal substrate 10 is provided. The metal substrate 10 is made of aluminum, aluminum alloy, titanium, aluminum-magnesium alloy, magnesium alloy, zinc, zinc alloy, or aluminum-zinc alloy.
The metal substrate 10 is degreased. This step may use a neutral cleaning agent for cleaning metal. The step may be carried out by dipping the metal substrate 10 in the neutral cleaning agent having a concentration of about 5 g/L to about 20 g/L and a temperature of about 40° C. to about 75° C., allowing the metal substrate 10 to be ultrasonically cleaned for about 3 minutes to about 10 minutes.
The degreased metal substrate 10 is then etched using an alkali solution to remove an metal oxide film which may naturally form on the surface of the metal substrate 10. This step may be carried out by dipping the metal substrate 10 in the alkali solution for about 2 minutes to about 5 minutes. The alkali solution comprises at least one alkali chosen from a group consisting of sodium hydroxide, potassium hydroxide, and ammonium bifluoride. The alkali solution has a concentration of about 5 g/L to about 40 g/L.
The etched metal substrate 10 is then cleaned to remove etch-resulting impurities. This step may be carried out by dipping the metal substrate in a nitric acid solution for about 5 seconds to about 180 seconds. The nitric acid solution has a concentration of about 30 g/L to about 150 g/L.
The cleaned metal substrate 10 is anodized to form an anodic oxide layer 20 on the metal substrate 10. This step may be carried out in a sulphuric acid solution having a concentration of about 150 g/L to about 250 g/L. During the anodizing process, the sulphuric acid solution is kept at a temperature of about 10° C. to 50° C., and a voltage of about 8 V to about 25 V is applied to the metal substrate 10. The anodizing process may last for about 10 min to about 40 min. The anodic oxide layer 20 defines a plurality of nano pores having a diameter of about 5 nm to about 25 nm and a depth of about 1 μm to about 9 μm. The anodic oxide layer 20 has a thickness of about 1 μm to about 9 μm, and oxygen atoms distributed on the surface of the anodic oxide layer have a weight percentage of about 35% to about 50%.
An intermediate layer 30 is formed on the surface of the anodic oxide layer 20. This step may be carried out by dipping the anodized metal substrate 10 in a coupling agent solution having a weight concentration of about 0.1% to about 10% and a temperature of about 25° C. to about 100° C. for about 1 second to about 5 minutes, and then drying the coupling agent solution to form the intermediate layer 30 on the surface of the anodic oxide layer 20. The coupling agent solution contains a solvent; and the solvent may be water or ethanol. During this step, the coupling agent solution may flow into the nano pores of the anodic oxide layer 20, and on drying may form a coupling agent film on the wall of the nano pores. The coupling agent is titanate coupling agent, aluminate coupling agent, zirconate coupling agent, aluminium-titanium compound coupling agent, boric acid ester coupling agent, or sulfonic acid coupling agent. The intermediate layer 30 has a thickness of about 0.5 nm to about 10 nm.
Referring to
The metal substrate 10 is made of aluminum, aluminum alloy, titanium, aluminum-magnesium alloy, magnesium alloy, zinc, zinc alloy, or aluminum-zinc alloy. The anodic oxide layer 20 has a thickness of about 1 μm to about 9 μm and defines a plurality of nano pores having a diameter of about 5 nm to about 25 nm and a depth of about 1 μm to about 9 μm. The intermediate layer 30 comprises coupling agent. The coupling agent is titanate coupling agent, aluminate coupling agent, zirconate coupling agent, aluminium-titanium compound coupling agent, boric acid ester coupling agent, or sulfonic acid coupling agent. The intermediate layer 30 has a thickness of about 1 nm to about 100 nm. The resin article 40 is made of PBT, PPS, PET, PEEK, PC, or PVC. The bond between the resin article 40 and the intermediate layer 30 includes chemical bondings. The shear strength of the composite 100 is about 10 KgF/cm2 to about 40 KgF/cm2.
In this example, the metal substrate 10 was made of aluminum alloy 5052, and the resin article 40 was made of PBT.
The metal substrate 10 was degreased by dipping in a neutral cleaning agent for aluminum having a concentration of 25 g/L and a temperature of 60° C., allowing the metal substrate 10 to be ultrasonically cleaned, for 6 min.
The degreased metal substrate 10 was etched by dipping in a sodium hydroxide solution having a concentration of 50 g/L for 0.5 min.
The etched metal substrate 10 was cleaned by dipping in a nitric acid solution having a concentration of 150 g/L for 1 min.
The cleaned metal substrate 10 was anodized to form an anodic oxide layer 20 having a thickness of 5 μm. The anodizing was carried out in a sulphuric acid solution having a concentration of about 300 g/L. During the anodizing process, a voltage of 13 V was applied to the metal substrate, the sulphuric acid solution kept at a temperature of about 20° C. The anodizing process lasted for about 15 min.
The metal substrate 10 having the anodic oxide layer 20 was dipped in an aluminate coupling agent solution having a weight concentration of 3% and a temperature of 40° C. for about 10 seconds, and dried in an oven having an interior temperature of 60° C. for 15 min, to form an intermediate layer 30 on the anodic oxide layer 20. The intermediate layer 30 had a thickness of 1-10 nm.
Molten PBT resin having a temperature of 285° C. was injected to the surface of intermediate layer 30, and finally formed the resin article 40.
In this example, the metal substrate 10 was made of aluminum-magnesium alloy and the resin article 40 was made of PPS.
The metal substrate 10 was degreased by dipping in a neutral cleaning agent for aluminum having a concentration of 25 g/L and a temperature of 60° C., allowing the metal substrate 10 to be ultrasonically cleaned, for 6 min.
The degreased metal substrate 10 was etched by dipping in a sodium hydroxide solution having a concentration of 30 g/L, for 1 min.
The etched metal substrate 10 was cleaned by dipping in a nitric acid solution having a concentration of 150 g/L, for 1 min.
The cleaned metal substrate 10 was anodized to form an anodic oxide layer 20 having a thickness of 8 μm. The anodizing was carried out in a sulphuric acid solution having a concentration of about 100 g/L. During the anodizing process, a voltage of 13 V was applied to the metal substrate, the sulphuric acid solution kept at a temperature of about 20° C. The anodizing process lasted for about 30 min.
The metal substrate 10 having the anodic oxide layer 20 was dipped in a sulfonic acid coupling agent solution having a weight concentration of 2% and a temperature of 40° C. for about 60 seconds, and dried in an oven having an interior temperature of 60° C. for 15 min, to form an intermediate layer 30 on the anodic oxide layer 20. The intermediate layer 30 had a thickness of 1-10 nm.
Molten PBT resin having a temperature of 320° C. was injected to the surface of intermediate layer 30 and finally formed the resin article 40.
In this example, the metal substrate 10 was made of aluminum-magnesium alloy, and the resin article 40 was made of PA.
The metal substrate 10 was degreased by dipping in a neutral cleaning agent for aluminum having a concentration of 25 g/L and a temperature of 60° C., allowing the metal substrate 10 to be ultrasonically cleaned, for 6 min.
The degreased metal substrate 10 was etched by dipping in a sodium hydroxide solution having a concentration of 40 g/L, for 0.5 min.
The etched metal substrate 10 was cleaned by dipping in a nitric acid solution having a concentration of 150 g/L, for 1 min.
The cleaned metal substrate 10 was anodized to form an anodic oxide layer 20 having a thickness of 3 μm. The anodizing was carried out in a sulphuric acid solution having a concentration of about 200 g/L. During the anodizing process, a voltage of 13 V was applied to the metal substrate, the sulphuric acid solution kept at a temperature of about 20° C. The anodizing process lasted for about 10 min.
The metal substrate 10 having the anodic oxide layer 20 was dipped in a boric acid ester coupling agent solution having a weight concentration of 3% and a temperature of 30° C. for about 15 seconds, and dried in an oven having an interior temperature of 60° C. for 15 min, to form an intermediate layer 30 on the anodic oxide layer 20. The intermediate layer 30 had a thickness of 1-10 nm.
Molten PBT resin having a temperature of 220° C. was injected to the surface of intermediate layer 30 and finally formed the resin article 40.
It is believed that the exemplary embodiment and its advantages will be understood from the foregoing description, and it will be apparent that various changes may be made thereto without departing from the spirit and scope of the disclosure or sacrificing all of its advantages, the examples hereinbefore described merely being preferred or exemplary embodiments of the disclosure.
Number | Date | Country | Kind |
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201410019580.9 | Jan 2014 | CN | national |