Metal film encapsulation

Abstract
The present invention relates to metal foil encapsulation of an electrochemical device. The metal foil encapsulation may also provide contact tabs for the electrochemical device. The present invention may also include a selectively conductive bonding layer between a contact and a cell structure.
Description
FIELD OF THE INVENTION

The field of this invention is the device, composition, method of depositing, fabrication, and more specifically encapsulation of solid-state, thin-film, secondary and primary electrochemical devices, including batteries.


BACKGROUND

Typical electrochemical devices comprise multiple electrically active layers such as an anode, cathode, electrolyte, substrate, current collectors, etc. Some layers, such as, for example, an anode layer comprising Lithium, are comprised of materials that are very environmentally sensitive. Such batteries require an encapsulation to protect such environmentally sensitive material. Some schemes used to encapsulate the sensitive layers of electrochemical devices, such encapsulation with gold foil, are expensive. Other schemes encapsulate the device with pouch, for example, made of metal and plastic, that seals around the perimeter of the device. As the temperature changes the air within the metal and plastic pouch expands and/or contracts. This expansion and/or contraction may blow out the seals of the metal and plastic pouch or create other problems, thus eliminating the encapsulating benefits of the pouch.


Typical electrochemical devices also have tabs that extend out from the substrate. These tabs provide electrically conductive contact points for the battery. These tabs can be fragile and can break when gripped or secured from the outside and create difficulties when trying to design the encapsulation to maintain a proper seal around the tabs.


Thus, there is a need in the art to provide for better and cheaper encapsulating approaches and better approaches to providing electrically conductive contacts, including encapsulation that is substantially thinner than known encapsulation methods.


SUMMARY

One exemplary embodiment of the present invention includes a battery with a first electrical contact; a bonding layer coupled with the first electrical contact and having an embedded conductor; at least one cell structure; and a second electrical contact, wherein the bonding layer and the at least one cell structure are sandwiched between the first and second contact layers. The bonding layer may be selectively conductive through the embedded conductor. The cell structure may further be in selective electrical contact with the first electrical contact via the embedded conductor.


The first electrical contact may, for example, include an encapsulate metal. The second electrical contact may, for example include a substrate. The bonding layer may be an adhesive material, an insulating material, a plastic, glass, and/or fiberglass. The conductor may be a tab, a wire, multiple wires, a wire mesh, perforated metal, a metal coating applied to the adhesive layer, or a disk. The conductor may be woven within the bonding layer and the bonding layer may include a slit within which the embedded conductor is woven. The bonding layer may be an adhesive material containing one or more conductive portions that may be, for example, conductive powders, bodies or particles applied to one or more selected areas. The first and second contacts may be made from a conductive material such as, for example, gold, platinum, stainless steel, titanium, zirconium, cobalt, aluminum, indium, nickel, copper, silver, carbon, bronze, brass, beryllium, and/or oxides, nitrides, and alloys thereof. An insulating layer on the first and/or second contact may also be included. The insulating layer may be, for example, a plastic. The cell structure may include an anode, an electrolyte; a cathode, and a barrier layer. The cathode may, for example, not be annealed or annealed using rapid thermal anneal methods.


Another exemplary embodiment of the present invention includes method of manufacturing a thin film battery having, in no particular order, the steps of creating a selectively conductive bonding layer; coupling the bonding layer with a first contact layer; coupling a first side of a cell structure with a second contact layer; and coupling a second side of the cell structure with the bonding layer. Alternate steps may include creating a cell structure with an anode, cathode, and electrolyte layers; embedding a conductor within the bonding layer; weaving at least one conductive wire through the bonding layer wherein selective portions of the conductive wire are exposed; heating the bonding layer and compressing the conductor within the bonding layer; and insulating the battery with an insulating material. A reinforcement layer including KEVLAR®, fiberglass, plastic, glass or other insulating material may also be embedded within the bonding layer. This reinforcement layer is selectively conductive.


Another exemplary embodiment of the present invention is a device having an electrochemical device with at least one notch; and a metal foil. The metal foil may encapsulate the electrochemical device and a portion of the metal foil extends over the notch providing an electrical contact tab on the metal foil over the notched portion of the electrochemical device. The contact area may also have a hole. The metal foil may have one or more openings. The device may also have a second electrochemical device with a metal foil encapsulating both electrochemical devices. Furthermore, there may be a number of electrochemical devices with metal foils there between. The metal foil encapsulates or lies over the electrochemical device.


The metal foil may further include a cathode element of the electrochemical device. The electrochemical device may have a substrate and the metal foil may also be conductively attached to the substrate.


In any of these exemplary embodiments the metal foil, for example, may be made of stainless steel or any other metallic substance having the necessary characteristics and properties such as a requisite amount of conductivity. The device may, for example, also include an insulating layer. Furthermore, the metal foil may, for example, be less than 100 microns thick, less than 50 microns thick, or less than 25 microns thick.


Another exemplary embodiment of the present invention includes a method of manufacturing an electrochemical device comprising the steps of providing an electrochemical device the may include the steps of providing a substrate; and providing a notch in the electrochemical device. This exemplary embodiment may also, for example, include the step of encapsulating the substrate with a metal foil. In this embodiment, for example, the metal foil extends over the area notched in the step providing a notch and is conductively bonded to the substrate. This embodiment may also further include the step of fabricating a cathode on the substrate by rapid thermal anneal. Also, this exemplary embodiment may include the steps of providing a cathode, anode, electrolyte, current collector, barrier layer, an insulating material on the metal foil, and/or a second electrochemical device wherein the second electrochemical device is encapsulated by the metal foil. This exemplary embodiment may also include the step of providing openings in the metal foil. These openings may be prefabricated in the metal foil.





BRIEF DESCRIPTION OF THE FIGURES


FIG. 1A shows a top view of an electrochemical device according to an exemplary embodiment of the present invention.



FIG. 1B shows a side view of an electrochemical device according to an exemplary embodiment of the present invention.



FIG. 2A shows a perspective view of one corner of an electrochemical device with a notch in the electrochemical device according to an exemplary embodiment of the present invention.



FIG. 2B shows a perspective view of one corner of an electrochemical device with a notch in the encapsulation layer according to an exemplary, embodiment of the present invention.



FIG. 3A shows a top view of an electrochemical device with a configuration of holes in the metal encapsulation according to an exemplary embodiment of the present invention.



FIG. 3B shows a top view of an electrochemical device with another configuration of holes in the metal encapsulation according to an exemplary embodiment of the present invention.



FIG. 4A shows a top view of an electrochemical device with holes in the contacts according to an exemplary embodiment of the present invention.



FIG. 4B shows a side view of an electrochemical device with holes in the contacts according to an exemplary embodiment of the present invention.



FIG. 5A shows a side view of an electrochemical device with an electrochemical device on each side of the metal film encapsulation according to an exemplary embodiment of the present invention.



FIG. 5B shows a perspective view of an electrochemical device with an electrochemical device on each side of the metal film encapsulation according to an exemplary embodiment of the present invention.



FIG. 5C shows a perspective view of an electrochemical device with a notched metal film encapsulation between two devices according to an exemplary embodiment of the present invention.



FIG. 6 shows a plurality of electrochemical devices stacked with metal foil in between according to an exemplary embodiment of the present invention.



FIG. 7 shows an electrochemical device with a notch and tab on the side of the electrochemical device according to an exemplary embodiment of the invention.



FIG. 8 shows an electrochemical device with a substrate, cathode, electrolyte, anode and a metal foil encapsulation according to an exemplary embodiment of the invention.



FIG. 9A shows the electrochemical device of FIG. 2A with an insulating layer according to an exemplary embodiment of the invention.



FIG. 9B shows the electrochemical device of FIG. 2B with an insulating layer according to an exemplary embodiment of the invention.



FIG. 10 shows two electrochemical devices with three metal foils according to an exemplary embodiment of the invention.



FIG. 11A shows a side view electrochemical device with electrical contacts as an encapsulate and substrate according to an exemplary embodiment of the present invention.



FIG. 11B shows a top view electrochemical device with electrical contacts as an encapsulate and substrate according to an exemplary embodiment of the present invention.



FIG. 11C shows a top view of the electrochemical device of FIG. 11B with partial cuts in the encapsulation according to an exemplary embodiment of the present invention.



FIG. 11D shows a top view of the electrochemical device of FIG. 11C having resulting strips folded over according to an exemplary embodiment of the present invention.



FIG. 12A shows a side view of a stand alone conductor according to an exemplary embodiment of the present invention.



FIG. 12B shows top views of stand alone conductors according to an exemplary embodiment of the present invention.



FIG. 13A shows a side view of a bonding layer with a slit cut therein according to an exemplary embodiment of the present invention.



FIG. 13B shows a top view of a bonding layer with a slit cut therein according to an exemplary embodiment of the present invention.



FIG. 14A shows a side view of a conductor woven through a bonding layer according to an exemplary embodiment of the present invention.



FIG. 14B shows a top view of a mesh wire conductor woven through a bonding layer according to an exemplary embodiment of the present invention.



FIG. 15A shows a side view of a conductor embedded within a bonding layer according to an exemplary embodiment of the present invention.



FIG. 15B shows a top view of a mesh wire conductor embedded within a bonding layer according to an exemplary embodiment of the present invention.



FIG. 16A shows a side view of a first contact layer according to an exemplary embodiment of the present invention.



FIG. 16B shows a top view of a first contact layer according to an exemplary embodiment of the present invention.



FIG. 17A shows a side view of a first contact layer bonded with the bonding layer according to an exemplary embodiment of the present invention.



FIG. 17B shows a top view of a first contact layer bonded with the bonding layer according to an exemplary embodiment of the present invention.



FIG. 18A shows a side view of a cell structure on a second contact layer according to an exemplary embodiment of the present invention.



FIG. 18B shows a top view of a cell structure on a second contact layer according to an exemplary embodiment of the present invention.



FIG. 19A shows a side view of the first contact and bonding layer of FIG. 17A coupled with the cell structure and second contact of FIG. 18A according to an exemplary embodiment of the present invention.



FIG. 19B shows a top view of the first contact and bonding layer of FIG. 17B coupled with the cell structure and second contact of FIG. 18B according to an exemplary embodiment of the present invention.





DETAILED DESCRIPTION


FIG. 1A shows a top view of one exemplary embodiment. FIG. 1B shows a side view of this embodiment. As shown in the figures, this embodiment comprises an electrochemical device 130 and a metal encapsulation layer 110. The electrochemical device 130 may comprise any number of materials or layers. The electrochemical device 130 may also comprise a battery. For example, the electrochemical device 130 may comprise an anode, cathode, electrolyte, current collectors, substrate, etc. Some materials may, for example, comprise Lithium, LiCoO2, LIPON, gold, platinum, stainless steel, titanium, zirconium, cobalt, aluminum, indium, nickel, copper, silver, carbon, bronze, brass, beryllium, and/or oxides, nitrides, and alloys thereof. Furthermore, the electrochemical device 130 may be a thick film device.


The metal foil may, for example, be less than 100 microns in thickness. In another embodiment the metal foil may be less than 50 microns and in a specific embodiment the metal foil may be less than 25 microns.


The electrochemical device 130 may comprise at least one notch 131. The electrochemical device 130 shown in FIGS. 1A, 1B, 2A and 2B comprises a single notch 131, and the encapsulation layer 110 also includes a notch 111. These notches 111, 131 may be of any shape or size. The electrochemical device 130 or the encapsulation layer 110 may comprise any number of notches. The metal encapsulation layer 110 extends over the notch 131 in the electrochemical device 130 providing an encapsulation contact tab 112. This contact tab 112 extends over the open area left by the notch 131. The contact tab 112 may provide a convenient electrically conductive contact for the device. In a similar fashion, the electrochemical device may extend under the notch 111 in the metal encapsulation layer 110 providing a contact tab 132.



FIG. 2A and FIG. 2B show perspective views of the embodiment shown in FIG. 1A and FIG. 1B. FIG. 2A shows an electrochemical device 130, a metal encapsulating layer 110, a notch 131 in the electrochemical device 130, and a contact tab 112 in the encapsulation layer 110. FIG. 2B shows an electrochemical device 130, a metal encapsulating layer 110, a notch 111 in the encapsulation 110 and the contact tab 132 in the electrochemical device 130. Although these figures show notches 131, 111 on the corner of the device, they may be in any location. One such exemplary configuration is shown in FIG. 7A with a notch on the side of the device. Also, the notch is not necessarily square. For instance, the notch shown in FIG. 7A is round, whereas those shown in FIGS. 1A, 1B, 2A and 2B are rectangular notches.


The metal foil layer 110 may be adapted to encapsulate the electrochemical device 130. This encapsulation may, for example, protect the electrochemical device 130 from damaging environmental effects. For example, many electrochemical devices comprise environmentally sensitive materials such as Lithium. These materials can be extremely reactive with air and moisture, and may degrade when exposed to such environments. Accordingly, the metal foil encapsulate layer 110 may protect environmentally sensitive materials in the electrochemical device from air and/or moisture.


The metal foil encapsulate layer 110 in an exemplary embodiment of the present invention may lie over a substrate layer in the electrochemical device 130. An electrochemical device may include a number of layers, for example, a substrate, cathode, electrolyte, and anode. Such a device may be encapsulated with a metal foil deposed on the substrate, and may also include contact tabs. The metal foil, therefore, may provide contacts that are secure, durable and may be incorporated at any location in the device. Because the contacts are part of the metal foil, they are less likely to break or shear from the substrate.


The metal foil layer, in an exemplary embodiment of the present invention, may comprise the cathode.



FIG. 3A and FIG. 3B show top views of an exemplary embodiment of the present invention. In this embodiment, the metal foil encapsulation 110 comprises openings 150. These openings 150 may, for example, provide contact or access to layers in the electrochemical device. For example, these openings 150 may provide direct access to the substrate in the electrochemical device. These openings 150 may be of any size or configuration. Shown in the figures are exemplary circle and oval openings. Depending on the application a plurality of openings may be required or a single opening may suffice.



FIG. 9A shows the embodiment of FIG. 2A with an insulating layer 180 on the metal foil 110 and FIG. 9B shows the embodiment of FIG. 2B with an insulating layer 180 on the metal foil 110. The insulating layer 180 protects the metal foil 110 from unwanted electrical contacts. In FIG. 9A and FIG. 9B the tab 112, 132 portions are the only portion that are not covered with the insulating layer 180 allowing electrical contact only on the tabs 112, 132.



FIG. 4A and FIG. 4B show an exemplary embodiment of the present invention. This embodiment comprises a hole 126 in the contact tab 132 and a hole 125 in the encapsulate tab 112. Accordingly, these holes 125, 126 may, for example, provide a more secure contact point. Other devices may grip the contact through holes 125, 126.



FIG. 5A, FIG. 5B, and FIG. 5C show an exemplary embodiment of the present invention. This embodiment comprises two electrochemical devices 130, 160 with a single metal foil encapsulation layer 110 between the two devices. In this embodiment, for example, the metal foil 110 may comprise the cathode for both electrochemical devices 130, 160. Furthermore, in another embodiment the metal foil 110 may be electrically conductive to the substrate of the electrochemical devices 130, 160. This embodiment may also include an encapsulation layer 161 on the top of electrochemical device 160 as shown in FIG. 5B. In FIG. 10 a third metal foil 134 is also included.



FIG. 5B is a perspective view of the right side of FIG. 5A with a second encapsulation layer 161. As shown the two electrochemical devices 130, 160 have notches 131, 141 and there is an extending tab 112 in the encapsulate layers 110, 113.



FIG. 5C is a perspective view of the left side of FIG. 5A and shows a notch 111 in the encapsulate 110 and tabs in both electrochemical devices.



FIG. 6 shows a plurality of electrochemical devices 130, 160, 170, 180 stacked one upon another with metal foil layers 110, 161, 171 between and a metal encapsulate 181 on the top. Although this figure shows four electrochemical devices 130, 160, 170, 180, the invention is not limited by the number of devices that may be stacked. Any number of devices may be stacked without deviating from the invention. This embodiment also shows four tabs 112, 122, 173, 183 in the encapsulation layers.



FIG. 7 shows an exemplary embodiment of the present invention. In this embodiment an electrochemical device 130 has a notch 131 and a tab 132. On the bottom of the electrochemical device 130 is an encapsulation layer 110, which includes a tab 112 and a notch 111. The notches 111, 131 are circular and placed on the same side of the device.



FIG. 8 shows a embodiment similar to that shown in FIG. 7 with circular notches in both the encapsulate 110 and the electrochemical cell 130. This exemplary embodiment shows a second electrochemical device 160 and a second encapsulation layer 161.


In an exemplary embodiment of the present invention, a metal foil may lay over an electrochemical device. This metal foil encapsulates the electrochemical device and protects it from environmental harm. The metal foil also provides tabs that are conductively contacted with the substrate of the device.


In an exemplary embodiment of the present invention, the electrochemical device comprises LiCoO2. In this embodiment, the device is treated with a rapid thermal anneal. For example, the device is brought up to approximately 700° C. over a period of six minutes. The device is then held at this temperature for approximately five minutes and then quickly cooled to room temperature in about six minutes. This rapid thermal annealing crystallizes the LiCoO2 so that it may be used without a barrier layer. The period of time may vary up to 30 minutes or even down to 10 seconds.



FIG. 11A shows a side view of an electrochemical device according to an exemplary embodiment of the present invention. In this embodiment, a first contact 1101 is coupled with bonding layer 1110 with a portion of the first contact 1101 extending past the bonding layer 1110. The bonding layer 1110 may also be bonded with the cell structure 1115. A second contact 1105 is placed under the cell structure 1115. A barrier layer, for example, may also be placed between the second contact 1105 and the cell structure 1115. Shown embedded within the bonding layer 1110 is conductor 1120. This conductor 1120, for example, creates a selectively conductive bonding layer. A selectively conductive bonding layer 1110 permits conduction from the cell structure 1115 through the bonding layer 1110 to the first contact 1101 at specific points, and yet provides insulation between the first contact 1101 and the second contact 1105.


The conductor 1120 may be placed within the bonding layer 1110 in many different ways. For example, a metal tab, a metal wire, multiple metal wires, a metal wire mesh, perforated metal foil, perforated metal, a metal coating applied to the adhesive layer, a metallic disk, a metallically coated fiberglass or combinations thereof may be used. In each of these examples, the conductor 1120 can provide electrical conduction between the cell structure 1115 and the first contact 1101 and yet provide insulation between the two contacts 1101, 1105. In some embodiments the conductor 1120 may be woven within the bonding layer 1110. The conductor 1115 may be, for example, disks embedded within the bonding layer 1110. In some embodiments slits within the bonding layer 1110 may be made in order to weave or place the conductor 1120 through the bonding layer 1110. Also, for example, holes or other means may be used to place the conductor 1120 through the bonding layer 1110.


In an exemplary embodiment, a reinforcement layer may be placed within the insulating layer. For example, a fiberglass material may cover half of one surface of the insulating layer, woven through the layer and then cover the other half of the bonding layer. Such a layer of fiberglass without a conductive coating would insulate the materials placed between. The fiberglass may be coated in a localized area with a conductive material. Such conductive coatings can coat the fiberglass area at the top and bottom surface of the bonding layer. In such an embodiment, for example, the fiberglass would conduct between the upper contact and the cell. Conductive material may be disposed on the fiberglass using ink jet, silk screen, plasma deposition, e-beam deposition, spray and/or brush methods. Other materials may be used rather than fiberglass, such as, for example, KEVLAR®, plastic, glass or other insulating materials.


An exemplary embodiment of the present invention provides for selective contact between the first contact and the cell structure through holes in the bonding layer. In such an embodiment, holes in the bonding layer may allow the first contact and cell structure to remain in contact. The layers may be, for example, pressed together to create a contact. Alternatively, conductive glues or inks may be applied in or near the hole area in the bonding layer to make the contact between the layers. Lithium may also be used as a conductive material.


The conductor 1120, for example, may be made of gold, platinum, stainless steel, titanium, zirconium, cobalt, aluminum, indium, nickel, copper, silver, carbon, bronze, brass, beryllium, or oxides, nitrides, and alloys thereof.



FIG. 11B shows a top view of the exemplary embodiment shown in FIG. 11A. As shown in FIG. 11B the first contact 1101 extends past the bonding layer 1110 and the second contact 1105. Likewise, for example, the second contact 1105 also extends past the boding layer 1115 and the first contact 1101 in the opposite direction.



FIGS. 11C and 11D show an exemplary embodiment in which leads are formed from the first and second contacts 1101, 1105. As shown in FIG. 11C, a first partial cut 1140a is made in the first contact 1101 and a partial cut 1140b is made in the second contact 1105. These partial cuts form strips that may be folded over to extend from the electrochemical device. For instance, FIG. 11D shows an example in which strips 1142a and 1142b resulting from the partial cuts in the contacts 1101, 1105 are folded in a downward direction of the drawing. It should be appreciated that only one or both of the extending parts of the contacts 1101, 1105 can be partially cut to form leads in a variety of ways for a desired application or orientation of the electrochemical device.


For purposes of explaining the exemplary embodiments shown in FIGS. 11A-11D, FIGS. 12A-19B show individual layers and parts of this embodiment and how they can be coupled or bonded together. These figures are not meant to show a step-by-step process for manufacturing any embodiments of the invention. Rather, these figures are presented to help understand how the layers interact. FIGS. 12A, 13A, 14A, 15A, 16A, 17A, 18A and 19A show side views of various parts of an exemplary battery, and FIGS. 12B, 13B, 14B, 15B, 16B, 17B, 18B and 19B show top views.



FIG. 12A shows a side view of a conductor 1120 according to one embodiment of the present invention. The top view of three exemplary types of conductors, a wire 1121, a tab 1122, and a wire mesh 1123, are shown in FIG. 12B. FIG. 13A shows a side view and FIG. 13B shows a top view of a slit 1130 cut within a bonding layer 1110. FIG. 14A shows a side view of a conductor 1120, for example, woven through the bonding layer. FIG. 14B shows a top view of a mesh wire conductor 1123 woven through the bonding layer 1110. FIG. 15A shows the conductor 1120 embedded within the bonding layer. The conductor 1120 maybe embedded within the bonding layer 1110, for example, by heating the bonding layer 1110 to the point where the conductor 1120 may be pressed within the bonding layer 1110. The surfaces of the conductor 1120 and bonding layer 1110 may preferably be flush after this process. FIG. 15B shows a top view of a wire mesh conductor 1123 embedded within the bonding layer.


The resultant bonding layer 1110 from FIGS. 12A-15B show a bonding layer with insulating properties yet provides selective conductivity between the portions of the top surface and the lower surface of the bonding layer 1120. Other combination may also produce selective conductivity.



FIG. 16A and FIG. 16B show a first contact 1101. FIG. 17A shows the first contact 1101 bonded with the bonding layer 1110. Note that in this embodiment the conductor 1120 preferably makes electrical contact with the first electrical contact 1101. FIG. 17B, shows the top view of FIG. 17A. The first contact may also encapsulate the battery thereby protecting it from environmental degradation and damage. For example, many electrochemical devices comprise environmentally sensitive materials such as Lithium. These materials can be extremely reactive with air and moisture, and may degrade when exposed to such environments. Accordingly, the first contact 1101 may encapsulate the battery to protect it from environmentally sensitive materials in the electrochemical device from air and/or moisture.



FIG. 18A shows an exemplary embodiment of a single battery cell 1115 coupled with a second contact 1105. The second contact 1105 may also be the substrate upon which the cell is deposited. The cell structure in this embodiment comprises a cathode, and anode and an electrolyte. The electrolyte may include LIPON.



FIG. 19A shows a completed cell structure. The second contact 1105 and the cell structure 1115 from FIG. 18A are coupled with the first contact 1101 and the bonding layer 1110 as shown in 17A. Again, note how the conductor 1120 is preferably in electrical contact with the electrochemical device 1115 in a selective area. The cell is bounded by external contacts 1101 and 1105 with minimal layers there between. In this embodiment the first and second contacts 1101 and 1105 extend beyond the area of the electrochemical device 1115.


The first and second contacts 1101, 1105 of this embodiment can be made of a conductive metal. For example, the contact or contacts may be made of gold, platinum, stainless steel, titanium, zirconium, cobalt, aluminum, indium, nickel, copper, silver, carbon, bronze, brass, beryllium, or oxides, nitrides, and alloys thereof. Other conductive materials may also be used.


While the above examples show a conductive material 1120-1123 provided in an opening in the bonding layer 1110, such as the slit 1130 shown in FIG. 13b, it should be appreciated that electrical contact between the cell structure 1115 and first electrical contact 1101 may be provided by a number of other ways. For example, electrical conduction between the cell structure 1115 and the first contact 1101 may be provided by embedding a conductive powder within an adhesive forming the bonding layer 1110. For example, a conductive powder such as a metallic powder (e.g., nickel powder) can be embedded in an adhesive bonding layer 1110 at one or more selected areas within an adhesive bonding layer 1110 and between the contact 1101 and the cell structure 1115. Those skilled in the art will appreciate other conductive materials that may be provided for the selective conduction, such as conductive balls, slugs, wiring mesh etc. selectively provided within an adhesive. The ways to achieve electrical conduction between the cell structure 1115 and the first contact 1101, and yet provide insulation between the two contacts 1101, 1105, should not be considered as limited to the examples explained herein.


The embodiments described above are exemplary only. One skilled in the art may recognize variations from the embodiments specifically described here, which are intended to be within the scope of this disclosure. As such, the invention is limited only by the following claims. Thus, it is intended that the present invention cover the modifications of this invention provided they come within the scope of the appended claims and their equivalents.

Claims
  • 1. A device comprising: an electrochemical device with at least one notch;a metal foil comprising a surface; andan electronically insulating layer wherein said insulating layer contacts said surface of said metal foil;wherein said metal foil encapsulates said electrochemical device and a portion of said metal foil extends over said notch providing an electrical contact tab on said metal foil over the notched portion of said electrochemical device; andwherein said insulating layer does not cover the electrical contact tab on said metal foil.
  • 2. The device of claim 1 further comprising at least one opening in said metal foil.
  • 3. The device of claim 1 further comprising a plurality of openings in said metal foil.
  • 4. The device of claim 1 wherein said contact tab is a lead extending from said metal foil.
  • 5. The device of claim 1 further comprising a second electrochemical device.
  • 6. The device of claim 5 wherein said metal foil also encapsulates said second electrochemical device with at least one notch and a portion of said metal foil extends over said notch providing an electrical contact tab on said metal foil over the notched portion of said electrochemical device.
  • 7. The device of claim 6 wherein said contact tab is a lead extending from said metal foil.
  • 8. The device of claim 1 wherein the metal foil acts as a cathode element of said electrochemical device.
  • 9. The device of claim 1 wherein the metal foil acts as an anode element of said electrochemical device.
  • 10. The device of claim 1 further comprising a plurality of electrochemical devices with at least one notch in each electrochemical device stacked one upon another with at least one metal foil encapsulating each electrochemical device.
  • 11. The device of claim 10 further comprising a plurality of cell structures.
  • 12. The device of claim 1 wherein said electrochemical device comprises a substrate and said metal foil is conductively attached to said substrate.
  • 13. The device of claim 1 wherein said metal foil lays over said electrochemical device.
  • 14. The device of claim 1 wherein said metal foil comprises stainless steel.
  • 15. The device of claim 1 wherein said metal foil is less than approximately 100 microns thick.
  • 16. The device of claim 1 wherein said metal foil is less than approximately 50 microns thick.
  • 17. The device of claim 1 wherein said metal foil is less than approximately 25 microns thick.
  • 18. The device of claim 1 wherein said cathode is not annealed.
  • 19. The device of claim 1 wherein said cathode is annealed via rapid thermal anneal.
RELATED APPLICATIONS

The present application is a divisional, and claims the benefit under 35 U.S.C. §120, of U.S. patent application Ser. No. 11/687,032, filed Mar. 16, 2007; which claims the benefit under 35 U.S.C. §119 of U.S. Provisional Application Ser. No. 60/782,792, filed Mar. 16, 2006; and is a continuation-in-part, and claims the benefit under 35 U.S.C. §120, of U.S. patent application Ser. No. 11/561,277, filed Nov. 17, 2006, which claims the benefit under 35 U.S.C. §119 of U.S. Patent Application Ser. No. 60/737,613, filed Nov. 17, 2005, U.S. Patent Application Ser. No. 60/759,479 filed Jan. 17, 2006, and U.S. Patent Application Ser. No. 60/782,792, filed Mar. 16, 2006, and is a continuation-in-part, and claims the benefit under 35 U.S.C. §120, of U.S. patent application Ser. No. 11/209,536, filed Aug. 23, 2005; which is a continuation, and claims the benefit under 35 U.S.C. §120, of U.S. patent application Ser. No. 11/374,282, converted from U.S. Provisional Application Ser. No. 60/690,697, and filed Jun. 15, 2005; all of which are incorporated herein by reference in their entirety. The teachings of U.S. patent application Ser. No. 10/215,190, filed Aug. 9, 2002, now U.S. Pat. No. 6,916,679 are also incorporated herein by reference in its entirety.

US Referenced Citations (812)
Number Name Date Kind
712316 Loppe et al. Oct 1902 A
1712316 Loppe et al. Oct 1902 A
2970180 Urry Jan 1961 A
3309302 Heil Mar 1967 A
3616403 Collins et al. Oct 1971 A
3790432 Fletcher et al. Feb 1974 A
3797091 Gavin Mar 1974 A
3850604 Klein Nov 1974 A
3939008 Longo et al. Feb 1976 A
4082569 Evans, Jr. Apr 1978 A
4111523 Kaminow et al. Sep 1978 A
4127424 Ullery, Jr. Nov 1978 A
4226924 Kimura et al. Oct 1980 A
4283216 Brereton Aug 1981 A
4318938 Barnett et al. Mar 1982 A
4328297 Bilhorn May 1982 A
4395713 Nelson et al. Jul 1983 A
4437966 Hope et al. Mar 1984 A
4442144 Pipkin Apr 1984 A
4467236 Kolm et al. Aug 1984 A
4481265 Ezawa et al. Nov 1984 A
4518661 Rippere May 1985 A
4555456 Kanehori et al. Nov 1985 A
4572873 Kanehori et al. Feb 1986 A
4587225 Tsukuma et al. May 1986 A
4619680 Nourshargh et al. Oct 1986 A
4645726 Hiratani et al. Feb 1987 A
4664993 Sturgis et al. May 1987 A
4668593 Sammells May 1987 A
RE32449 Claussen et al. Jun 1987 E
4672586 Shimohigashi et al. Jun 1987 A
4710940 Sipes, Jr. Dec 1987 A
4728588 Noding et al. Mar 1988 A
4740431 Little Apr 1988 A
4756717 Sturgis et al. Jul 1988 A
4785459 Baer Nov 1988 A
4826743 Nazri May 1989 A
4865428 Corrigan Sep 1989 A
4878094 Balkanski Oct 1989 A
4903326 Zakman et al. Feb 1990 A
4915810 Kestigian et al. Apr 1990 A
4964877 Keister et al. Oct 1990 A
4977007 Kondo et al. Dec 1990 A
4978437 Wirz Dec 1990 A
5006737 Fay Apr 1991 A
5019467 Fujiwara May 1991 A
5030331 Sato Jul 1991 A
5035965 Sangyoji et al. Jul 1991 A
5055704 Link et al. Oct 1991 A
5057385 Hope et al. Oct 1991 A
5085904 Deak et al. Feb 1992 A
5096852 Hobson Mar 1992 A
5100821 Fay Mar 1992 A
5107538 Benton et al. Apr 1992 A
5110694 Nagasubramanian et al. May 1992 A
5110696 Shokoohi et al. May 1992 A
5119269 Nakayama Jun 1992 A
5119460 Bruce et al. Jun 1992 A
5124782 Hundt et al. Jun 1992 A
5147985 DuBrucq Sep 1992 A
5153710 McCain Oct 1992 A
5169408 Biggerstaff et al. Dec 1992 A
5171413 Arntz et al. Dec 1992 A
5173271 Chen et al. Dec 1992 A
5174876 Buchal et al. Dec 1992 A
5180645 Morë Jan 1993 A
5187564 McCain Feb 1993 A
5196041 Tumminelli et al. Mar 1993 A
5196374 Hundt et al. Mar 1993 A
5200029 Bruce et al. Apr 1993 A
5202201 Meunier et al. Apr 1993 A
5206925 Nakazawa et al. Apr 1993 A
5208121 Yahnke et al. May 1993 A
5217828 Sangyoji et al. Jun 1993 A
5221891 Janda et al. Jun 1993 A
5225288 Beeson et al. Jul 1993 A
5227264 Duval et al. Jul 1993 A
5237439 Misono et al. Aug 1993 A
5252194 Demaray et al. Oct 1993 A
5262254 Koksbang et al. Nov 1993 A
5273608 Nath Dec 1993 A
5287427 Atkins et al. Feb 1994 A
5296089 Chen et al. Mar 1994 A
5300461 Ting Apr 1994 A
5302474 Shackle et al. Apr 1994 A
5303319 Ford et al. Apr 1994 A
5306569 Hiraki Apr 1994 A
5307240 McMahon Apr 1994 A
5309302 Vollmann May 1994 A
5314765 Bates May 1994 A
5326652 Lake Jul 1994 A
5326653 Chang Jul 1994 A
5338624 Gruenstern et al. Aug 1994 A
5338625 Bates et al. Aug 1994 A
5342709 Yahnke et al. Aug 1994 A
5355089 Treger et al. Oct 1994 A
5360686 Peled et al. Nov 1994 A
5362579 Rossoll et al. Nov 1994 A
5381262 Arima et al. Jan 1995 A
5387482 Anani Feb 1995 A
5401595 Kagawa et al. Mar 1995 A
5403680 Otagawa et al. Apr 1995 A
5411537 Munshi et al. May 1995 A
5411592 Ovshinsky et al. May 1995 A
5419982 Tura et al. May 1995 A
5427669 Drummond Jun 1995 A
5435826 Sakakibara et al. Jul 1995 A
5437692 Dasgupta et al. Aug 1995 A
5445856 Chaloner-Gill Aug 1995 A
5445906 Hobson et al. Aug 1995 A
5448110 Tuttle et al. Sep 1995 A
5449576 Anani Sep 1995 A
5455126 Bates et al. Oct 1995 A
5457569 Liou et al. Oct 1995 A
5458995 Behl et al. Oct 1995 A
5464692 Huber Nov 1995 A
5464706 Dasgupta et al. Nov 1995 A
5470396 Mongon et al. Nov 1995 A
5472795 Atita Dec 1995 A
5475528 LaBorde Dec 1995 A
5478456 Humpal et al. Dec 1995 A
5483613 Bruce et al. Jan 1996 A
5493177 Muller et al. Feb 1996 A
5498489 Dasgupta et al. Mar 1996 A
5499207 Miki et al. Mar 1996 A
5501918 Gruenstern et al. Mar 1996 A
5504041 Summerfelt Apr 1996 A
5512147 Bates et al. Apr 1996 A
5512387 Ovshinsky Apr 1996 A
5512389 Dasgupta et al. Apr 1996 A
5538796 Schaffer et al. Jul 1996 A
5540742 Sangyoji et al. Jul 1996 A
5547780 Kagawa et al. Aug 1996 A
5547781 Blonsky et al. Aug 1996 A
5547782 Dasgupta et al. Aug 1996 A
5552242 Ovshinsky et al. Sep 1996 A
5555127 Abdelkader et al. Sep 1996 A
5561004 Bates et al. Oct 1996 A
5563979 Bruce et al. Oct 1996 A
5565071 Demaray et al. Oct 1996 A
5567210 Bates et al. Oct 1996 A
5569520 Bates Oct 1996 A
5582935 Dasgupta et al. Dec 1996 A
5591520 Migliorini et al. Jan 1997 A
5597660 Bates et al. Jan 1997 A
5597661 Takeuchi et al. Jan 1997 A
5599355 Nagasubramanian et al. Feb 1997 A
5601952 Dasgupta et al. Feb 1997 A
5603816 Demaray et al. Feb 1997 A
5607560 Hirabayashi et al. Mar 1997 A
5607789 Treger et al. Mar 1997 A
5612152 Bates et al. Mar 1997 A
5612153 Moulton et al. Mar 1997 A
5613995 Bhandarkar et al. Mar 1997 A
5616933 Li Apr 1997 A
5618382 Mintz et al. Apr 1997 A
5625202 Chai Apr 1997 A
5637418 Brown et al. Jun 1997 A
5643480 Gustavsson et al. Jul 1997 A
5644207 Lew et al. Jul 1997 A
5645626 Edlund et al. Jul 1997 A
5645960 Scrosati et al. Jul 1997 A
5654054 Tropsha et al. Aug 1997 A
5654984 Hershbarger et al. Aug 1997 A
5658652 Sellergren Aug 1997 A
5660700 Shimizu et al. Aug 1997 A
5665490 Takeuchi et al. Sep 1997 A
5667538 Bailey Sep 1997 A
5677784 Harris Oct 1997 A
5679980 Summerfelt Oct 1997 A
5681666 Treger et al. Oct 1997 A
5686360 Harvey, III et al. Nov 1997 A
5689522 Beach Nov 1997 A
5693956 Shi et al. Dec 1997 A
5702829 Paidassi et al. Dec 1997 A
5705293 Hobson Jan 1998 A
5716728 Smesko Feb 1998 A
5718813 Drummond et al. Feb 1998 A
5719976 Henry et al. Feb 1998 A
5721067 Jacobs et al. Feb 1998 A
RE35746 Lake Mar 1998 E
5731661 So et al. Mar 1998 A
5738731 Shindo et al. Apr 1998 A
5742094 Ting Apr 1998 A
5755938 Fukui et al. May 1998 A
5755940 Shindo May 1998 A
5757126 Harvey, III et al. May 1998 A
5762768 Goy et al. Jun 1998 A
5763058 Isen et al. Jun 1998 A
5771562 Harvey, III et al. Jun 1998 A
5776278 Tuttle et al. Jul 1998 A
5779839 Tuttle et al. Jul 1998 A
5790489 O'Connor Aug 1998 A
5792550 Phillips et al. Aug 1998 A
5805223 Shikakura et al. Sep 1998 A
5811177 Shi et al. Sep 1998 A
5814195 Lehan et al. Sep 1998 A
5830330 Lantsman Nov 1998 A
5831262 Greywall et al. Nov 1998 A
5834137 Zhang et al. Nov 1998 A
5841931 Foresi et al. Nov 1998 A
5842118 Wood, Jr. Nov 1998 A
5845990 Hymer Dec 1998 A
5847865 Gopinath et al. Dec 1998 A
5849163 Ichikawa et al. Dec 1998 A
5851896 Summerfelt Dec 1998 A
5853830 McCaulley et al. Dec 1998 A
5855744 Halsey et al. Jan 1999 A
5856705 Ting Jan 1999 A
5864182 Matsuzaki Jan 1999 A
5865860 Delnick Feb 1999 A
5870273 Sogabe et al. Feb 1999 A
5874184 Takeuchi et al. Feb 1999 A
5882721 Delnick Mar 1999 A
5882946 Otani Mar 1999 A
5889383 Teich Mar 1999 A
5895731 Clingempeel Apr 1999 A
5897522 Nitzan Apr 1999 A
5900057 Buchal et al. May 1999 A
5909346 Malhotra et al. Jun 1999 A
5916704 Lewin et al. Jun 1999 A
5923964 Li Jul 1999 A
5930046 Solberg et al. Jul 1999 A
5930584 Sun et al. Jul 1999 A
5942089 Sproul et al. Aug 1999 A
5948215 Lantsmann Sep 1999 A
5948464 Delnick Sep 1999 A
5948562 Fulcher et al. Sep 1999 A
5952778 Haskal et al. Sep 1999 A
5955217 Lerberghe Sep 1999 A
5961672 Skotheim et al. Oct 1999 A
5961682 Lee et al. Oct 1999 A
5966491 DiGiovanni Oct 1999 A
5970393 Khorrami et al. Oct 1999 A
5973913 McEwen et al. Oct 1999 A
5977582 Flemming et al. Nov 1999 A
5982144 Johnson et al. Nov 1999 A
5985484 Young et al. Nov 1999 A
5985485 Ovshinsky et al. Nov 1999 A
6000603 Koskenmaki et al. Dec 1999 A
6001224 Drummond et al. Dec 1999 A
6004660 Topolski et al. Dec 1999 A
6007945 Jacobs et al. Dec 1999 A
6013949 Tuttle Jan 2000 A
6019284 Freeman et al. Feb 2000 A
6023610 Wood, Jr. Feb 2000 A
6024844 Drummond et al. Feb 2000 A
6025094 Visco et al. Feb 2000 A
6028990 Shahani et al. Feb 2000 A
6030421 Gauthier et al. Feb 2000 A
6033768 Muenz et al. Mar 2000 A
6042965 Nestler et al. Mar 2000 A
6045626 Yano et al. Apr 2000 A
6045652 Tuttle et al. Apr 2000 A
6045942 Miekka et al. Apr 2000 A
6046081 Kuo Apr 2000 A
6046514 Rouillard et al. Apr 2000 A
6048372 Mangahara et al. Apr 2000 A
6051114 Yao et al. Apr 2000 A
6051296 McCaulley et al. Apr 2000 A
6052397 Jeon et al. Apr 2000 A
6057557 Ichikawa May 2000 A
6058233 Dragone May 2000 A
6071323 Kawaguchi Jun 2000 A
6075973 Greeff et al. Jun 2000 A
6077106 Mish Jun 2000 A
6077642 Ogata et al. Jun 2000 A
6078791 Tuttle et al. Jun 2000 A
6080508 Dasgupta et al. Jun 2000 A
6080643 Noguchi et al. Jun 2000 A
6093944 VanDover Jul 2000 A
6094292 Goldner et al. Jul 2000 A
6096569 Matsuno et al. Aug 2000 A
6100108 Mizuno et al. Aug 2000 A
6106933 Nagai et al. Aug 2000 A
6110531 Paz De Araujo et al. Aug 2000 A
6115616 Halperin et al. Sep 2000 A
6117279 Smolanoff et al. Sep 2000 A
6118426 Albert et al. Sep 2000 A
6120890 Chen et al. Sep 2000 A
6129277 Grant et al. Oct 2000 A
6133670 Rodgers et al. Oct 2000 A
6137671 Staffiere Oct 2000 A
6144916 Wood, Jr. et al. Nov 2000 A
6146225 Sheats et al. Nov 2000 A
6148503 Delnick et al. Nov 2000 A
6156452 Kozuki et al. Dec 2000 A
6157765 Bruce et al. Dec 2000 A
6159635 Dasgupta et al. Dec 2000 A
6160373 Dunn et al. Dec 2000 A
6162709 Raoux et al. Dec 2000 A
6165566 Tropsha Dec 2000 A
6168884 Neudecker et al. Jan 2001 B1
6169474 Greeff et al. Jan 2001 B1
6175075 Shiotsuka et al. Jan 2001 B1
6176986 Watanabe et al. Jan 2001 B1
6181283 Johnson et al. Jan 2001 B1
6192222 Greeff et al. Feb 2001 B1
6197167 Tanaka Mar 2001 B1
6198217 Suzuki et al. Mar 2001 B1
6204111 Uemoto et al. Mar 2001 B1
6210544 Sasaki Apr 2001 B1
6210832 Visco et al. Apr 2001 B1
6214061 Visco et al. Apr 2001 B1
6214660 Uemoto et al. Apr 2001 B1
6218049 Bates et al. Apr 2001 B1
6220516 Tuttle et al. Apr 2001 B1
6223317 Pax et al. Apr 2001 B1
6228532 Tsuji et al. May 2001 B1
6229987 Greeff et al. May 2001 B1
6232242 Hata et al. May 2001 B1
6235432 Kono et al. May 2001 B1
6236793 Lawrence et al. May 2001 B1
6242128 Tura et al. Jun 2001 B1
6242129 Johnson Jun 2001 B1
6242132 Neudecker et al. Jun 2001 B1
6248291 Nakagama et al. Jun 2001 B1
6248481 Visco et al. Jun 2001 B1
6248640 Nam Jun 2001 B1
6249222 Gehlot Jun 2001 B1
6252564 Albert et al. Jun 2001 B1
6258252 Miyasaka et al. Jul 2001 B1
6261917 Quek et al. Jul 2001 B1
6264709 Yoon et al. Jul 2001 B1
6265652 Kurata et al. Jul 2001 B1
6268695 Affinito Jul 2001 B1
6271053 Kondo Aug 2001 B1
6271793 Brady et al. Aug 2001 B1
6271801 Tuttle et al. Aug 2001 B2
6280585 Obinata Aug 2001 B1
6280875 Kwak et al. Aug 2001 B1
6281142 Basceri Aug 2001 B1
6284406 Xing et al. Sep 2001 B1
6287986 Mihara Sep 2001 B1
6289209 Wood, Jr. Sep 2001 B1
6290821 McLeod Sep 2001 B1
6290822 Fleming et al. Sep 2001 B1
6291098 Shibuya et al. Sep 2001 B1
6294722 Kondo et al. Sep 2001 B1
6296949 Bergstresser et al. Oct 2001 B1
6296967 Jacobs et al. Oct 2001 B1
6296971 Hara Oct 2001 B1
6300215 Shin Oct 2001 B1
6302939 Rabin Oct 2001 B1
6306265 Fu et al. Oct 2001 B1
6316563 Naijo et al. Nov 2001 B2
6323416 Komori et al. Nov 2001 B1
6324211 Ovard et al. Nov 2001 B1
6325294 Tuttle et al. Dec 2001 B2
6329213 Tuttle et al. Dec 2001 B1
6339236 Tomii et al. Jan 2002 B1
6340880 Higashijima et al. Jan 2002 B1
6344366 Bates Feb 2002 B1
6344419 Forster et al. Feb 2002 B1
6344795 Gehlot Feb 2002 B1
6350353 Gopalraja et al. Feb 2002 B2
6351630 Wood, Jr. Feb 2002 B2
6356230 Greeff et al. Mar 2002 B1
6356694 Weber Mar 2002 B1
6356764 Ovard et al. Mar 2002 B1
6358810 Dornfest et al. Mar 2002 B1
6360954 Barnardo Mar 2002 B1
6361662 Chiba et al. Mar 2002 B1
6365300 Ota et al. Apr 2002 B1
6365319 Heath et al. Apr 2002 B1
6368275 Sliwa et al. Apr 2002 B1
6369316 Plessing et al. Apr 2002 B1
6372383 Lee et al. Apr 2002 B1
6372386 Cho et al. Apr 2002 B1
6373224 Goto et al. Apr 2002 B1
6375780 Tuttle et al. Apr 2002 B1
6376027 Lee et al. Apr 2002 B1
6379835 Kucherovsky et al. Apr 2002 B1
6379842 Mayer Apr 2002 B1
6379846 Terahara et al. Apr 2002 B1
6380477 Curtin Apr 2002 B1
6384573 Dunn May 2002 B1
6387563 Bates May 2002 B1
6391166 Wang May 2002 B1
6392565 Brown May 2002 B1
6394598 Kaiser May 2002 B1
6395430 Cho et al. May 2002 B1
6396001 Nakamura May 2002 B1
6398824 Johnson Jun 2002 B1
6399241 Hara et al. Jun 2002 B1
6402039 Freeman et al. Jun 2002 B1
6402795 Chu et al. Jun 2002 B1
6402796 Johnson Jun 2002 B1
6409965 Nagata et al. Jun 2002 B1
6413284 Chu et al. Jul 2002 B1
6413285 Chu et al. Jul 2002 B1
6413382 Wang et al. Jul 2002 B1
6413645 Graff et al. Jul 2002 B1
6413676 Munshi Jul 2002 B1
6414626 Greeff et al. Jul 2002 B1
6416598 Sircar Jul 2002 B1
6420961 Bates et al. Jul 2002 B1
6422698 Kaiser Jul 2002 B2
6423106 Bates Jul 2002 B1
6423776 Akkapeddi et al. Jul 2002 B1
6426163 Pasquier et al. Jul 2002 B1
6432577 Shul et al. Aug 2002 B1
6432584 Visco et al. Aug 2002 B1
6433380 Shin Aug 2002 B2
6433465 McKnight et al. Aug 2002 B1
6436156 Wandeloski et al. Aug 2002 B1
6437231 Kurata et al. Aug 2002 B2
6444336 Jia et al. Sep 2002 B1
6444355 Murai et al. Sep 2002 B1
6444368 Hikmet et al. Sep 2002 B1
6444750 Touhsaent Sep 2002 B1
6459418 Comiskey et al. Oct 2002 B1
6459726 Ovard et al. Oct 2002 B1
6466771 Wood, Jr. Oct 2002 B2
6475668 Hosokawa et al. Nov 2002 B1
6480699 Lovoi Nov 2002 B1
6481623 Grant et al. Nov 2002 B1
6488822 Moslehi Dec 2002 B1
6494999 Herrera et al. Dec 2002 B1
6495283 Yoon et al. Dec 2002 B1
6497598 Affinito Dec 2002 B2
6500287 Azens et al. Dec 2002 B1
6503661 Park et al. Jan 2003 B1
6503831 Speakman Jan 2003 B2
6506289 Demaray et al. Jan 2003 B2
6511516 Johnson et al. Jan 2003 B1
6511615 Dawes et al. Jan 2003 B1
6517968 Johnson et al. Feb 2003 B2
6522067 Graff et al. Feb 2003 B1
6524466 Bonaventura et al. Feb 2003 B1
6524750 Mansuetto Feb 2003 B1
6525976 Johnson Feb 2003 B1
6528212 Kusumoto et al. Mar 2003 B1
6529827 Beason et al. Mar 2003 B1
6533907 Demaray et al. Mar 2003 B2
6537428 Xiong et al. Mar 2003 B1
6538211 St. Lawrence et al. Mar 2003 B2
6541147 McLean et al. Apr 2003 B1
6548912 Graff et al. Apr 2003 B1
6551745 Moutsios et al. Apr 2003 B2
6558836 Whitacre et al. May 2003 B1
6562513 Takeuchi et al. May 2003 B1
6563998 Farah et al. May 2003 B1
6569564 Lane May 2003 B1
6569570 Sonobe et al. May 2003 B2
6570325 Graff et al. May 2003 B2
6572173 Muller Jun 2003 B2
6573652 Graff et al. Jun 2003 B1
6576546 Gilbert et al. Jun 2003 B2
6579728 Grant et al. Jun 2003 B2
6582480 Pasquier et al. Jun 2003 B2
6582481 Erbil Jun 2003 B1
6582852 Gao et al. Jun 2003 B1
6589299 Missling et al. Jul 2003 B2
6593150 Ramberg et al. Jul 2003 B2
6599662 Chiang et al. Jul 2003 B1
6600905 Greeff et al. Jul 2003 B2
6602338 Chen et al. Aug 2003 B2
6603139 Tessler et al. Aug 2003 B1
6603391 Greeff et al. Aug 2003 B1
6605228 Kawaguchi et al. Aug 2003 B1
6608464 Lew et al. Aug 2003 B1
6608470 Oglesbee et al. Aug 2003 B1
6610440 LaFollette et al. Aug 2003 B1
6615614 Makikawa et al. Sep 2003 B1
6616035 Ehrensvard et al. Sep 2003 B2
6618829 Pax et al. Sep 2003 B2
6620545 Goenka et al. Sep 2003 B2
6622049 Penner et al. Sep 2003 B2
6632563 Krasnov et al. Oct 2003 B1
6637906 Knoerzer et al. Oct 2003 B2
6637916 Mullner Oct 2003 B2
6639578 Comiskey et al. Oct 2003 B1
6642895 Zurcher et al. Nov 2003 B2
6645675 Munshi Nov 2003 B1
6650000 Ballantine et al. Nov 2003 B2
6650942 Howard et al. Nov 2003 B2
6662430 Brady et al. Dec 2003 B2
6664006 Munshi Dec 2003 B1
6673484 Matsuura Jan 2004 B2
6673716 D'Couto et al. Jan 2004 B1
6674159 Peterson et al. Jan 2004 B1
6677070 Kearl Jan 2004 B2
6683244 Fujimori et al. Jan 2004 B2
6683749 Daby et al. Jan 2004 B2
6686096 Chung Feb 2004 B1
6693840 Shimada et al. Feb 2004 B2
6700491 Shafer Mar 2004 B2
6706449 Mikhaylik et al. Mar 2004 B2
6709778 Johnson Mar 2004 B2
6713216 Kugai et al. Mar 2004 B2
6713389 Speakman Mar 2004 B2
6713987 Krasnov et al. Mar 2004 B2
6723140 Chu et al. Apr 2004 B2
6730423 Einhart et al. May 2004 B2
6733924 Skotheim et al. May 2004 B1
6737197 Chu et al. May 2004 B2
6737789 Radziemski et al. May 2004 B2
6741178 Tuttle May 2004 B1
6750156 Le et al. Jun 2004 B2
6752842 Luski et al. Jun 2004 B2
6753108 Hampden-Smith et al. Jun 2004 B1
6753114 Jacobs et al. Jun 2004 B2
6760520 Medin et al. Jul 2004 B1
6764525 Whitacre et al. Jul 2004 B1
6768246 Pelrine et al. Jul 2004 B2
6768855 Bakke et al. Jul 2004 B1
6770176 Benson et al. Aug 2004 B2
6773848 Nortoft et al. Aug 2004 B1
6780208 Hopkins et al. Aug 2004 B2
6797428 Skotheim et al. Sep 2004 B1
6797429 Komastu Sep 2004 B1
6805998 Jensen et al. Oct 2004 B2
6805999 Lee et al. Oct 2004 B2
6818356 Bates Nov 2004 B1
6822157 Fujioka Nov 2004 B2
6824922 Park et al. Nov 2004 B2
6827826 Demaray et al. Dec 2004 B2
6828063 Park et al. Dec 2004 B2
6828065 Munshi Dec 2004 B2
6830846 Kramlich et al. Dec 2004 B2
6835493 Zhang et al. Dec 2004 B2
6838209 Langan et al. Jan 2005 B2
6846765 Imamura et al. Jan 2005 B2
6852139 Zhang et al. Feb 2005 B2
6855441 Levanon Feb 2005 B1
6861821 Masumoto et al. Mar 2005 B2
6863699 Krasnov et al. Mar 2005 B1
6866901 Burrows et al. Mar 2005 B2
6866963 Seung et al. Mar 2005 B2
6869722 Kearl Mar 2005 B2
6884327 Pan et al. Apr 2005 B2
6886240 Zhang et al. May 2005 B2
6890385 Tsuchiya et al. May 2005 B2
6896992 Kearl May 2005 B2
6899975 Watanabe et al. May 2005 B2
6902660 Lee et al. Jun 2005 B2
6905578 Moslehi et al. Jun 2005 B1
6906436 Jenson et al. Jun 2005 B2
6911667 Pichler et al. Jun 2005 B2
6916679 Snyder et al. Jul 2005 B2
6921464 Krasnov et al. Jul 2005 B2
6923702 Graff et al. Aug 2005 B2
6924164 Jensen Aug 2005 B2
6929879 Yamazaki Aug 2005 B2
6936377 Wensley et al. Aug 2005 B2
6936381 Skotheim et al. Aug 2005 B2
6936407 Pichler Aug 2005 B2
6949389 Pichler et al. Sep 2005 B2
6955986 Li Oct 2005 B2
6962613 Jenson Nov 2005 B2
6962671 Martin et al. Nov 2005 B2
6964829 Utsugi et al. Nov 2005 B2
6982132 Goldner et al. Jan 2006 B1
6986965 Jenson et al. Jan 2006 B2
6994933 Bates Feb 2006 B1
7022431 Shchori et al. Apr 2006 B2
7033406 Weir et al. Apr 2006 B2
7045246 Simburger et al. May 2006 B2
7045372 Ballantine et al. May 2006 B2
7056620 Krasnov et al. Jun 2006 B2
7073723 Fürst et al. Jul 2006 B2
7095372 Soler Castany et al. Aug 2006 B2
7129166 Speakman Oct 2006 B2
7131189 Jenson Nov 2006 B2
7144654 LaFollette et al. Dec 2006 B2
7144655 Jenson et al. Dec 2006 B2
7157187 Jenson Jan 2007 B2
7158031 Tuttle Jan 2007 B2
7162392 Vock et al. Jan 2007 B2
7183693 Brantner et al. Feb 2007 B2
7186479 Krasnov et al. Mar 2007 B2
7194801 Jenson et al. Mar 2007 B2
7198832 Burrows et al. Apr 2007 B2
7202825 Leizerovich et al. Apr 2007 B2
7220517 Park et al. May 2007 B2
7230321 McCain Jun 2007 B2
7247408 Skotheim et al. Jul 2007 B2
7253494 Mino et al. Aug 2007 B2
7265674 Tuttle Sep 2007 B2
7267904 Komatsu et al. Sep 2007 B2
7267906 Mizuta et al. Sep 2007 B2
7273682 Park et al. Sep 2007 B2
7274118 Jenson et al. Sep 2007 B2
7288340 Iwamoto Oct 2007 B2
7316867 Park et al. Jan 2008 B2
7323634 Speakman Jan 2008 B2
7332363 Edwards Feb 2008 B2
7335441 Luski et al. Feb 2008 B2
RE40137 Tuttle et al. Mar 2008 E
7345647 Rodenbeck Mar 2008 B1
7348099 Mukai et al. Mar 2008 B2
7389580 Jenson et al. Jun 2008 B2
7400253 Cohen Jul 2008 B2
7410730 Bates Aug 2008 B2
RE40531 Graff et al. Oct 2008 E
7466274 Lin et al. Dec 2008 B2
7468221 LaFollette et al. Dec 2008 B2
7494742 Tarnowski et al. Feb 2009 B2
7670724 Chan et al. Mar 2010 B1
7848715 Boos Dec 2010 B2
7858223 Visco et al. Dec 2010 B2
7993773 Snyder et al. Aug 2011 B2
8010048 Brommer et al. Aug 2011 B2
8021778 Snyder et al. Sep 2011 B2
8056814 Martin et al. Nov 2011 B2
8236443 Snyder et al. Aug 2012 B2
20010005561 Yamada et al. Jun 2001 A1
20010027159 Kaneyoshi Oct 2001 A1
20010031122 Lackritz et al. Oct 2001 A1
20010032666 Jenson et al. Oct 2001 A1
20010033952 Jenson et al. Oct 2001 A1
20010034106 Moise et al. Oct 2001 A1
20010041294 Chu et al. Nov 2001 A1
20010041460 Wiggins Nov 2001 A1
20010052752 Ghosh et al. Dec 2001 A1
20010054437 Komori et al. Dec 2001 A1
20010055719 Akashi et al. Dec 2001 A1
20020000034 Jenson Jan 2002 A1
20020001746 Jenson Jan 2002 A1
20020001747 Jenson Jan 2002 A1
20020004167 Jenson et al. Jan 2002 A1
20020009630 Gao et al. Jan 2002 A1
20020019296 Freeman et al. Feb 2002 A1
20020028377 Gross Mar 2002 A1
20020033330 Demaray et al. Mar 2002 A1
20020037756 Jacobs et al. Mar 2002 A1
20020066539 Muller Jun 2002 A1
20020067615 Muller Jun 2002 A1
20020071989 Verma et al. Jun 2002 A1
20020076133 Li et al. Jun 2002 A1
20020090758 Henley et al. Jul 2002 A1
20020091929 Ehrensvard Jul 2002 A1
20020093029 Ballantine et al. Jul 2002 A1
20020106297 Ueno et al. Aug 2002 A1
20020110733 Johnson Aug 2002 A1
20020115252 Haukka et al. Aug 2002 A1
20020134671 Demaray et al. Sep 2002 A1
20020139662 Lee Oct 2002 A1
20020140103 Kloster et al. Oct 2002 A1
20020159245 Murasko et al. Oct 2002 A1
20020161404 Schmidt Oct 2002 A1
20020164441 Amine et al. Nov 2002 A1
20020170821 Sandlin et al. Nov 2002 A1
20020170960 Ehrensvard et al. Nov 2002 A1
20030019326 Han et al. Jan 2003 A1
20030022487 Yoon et al. Jan 2003 A1
20030024994 Ladyansky Feb 2003 A1
20030029493 Plessing Feb 2003 A1
20030030589 Zurcher et al. Feb 2003 A1
20030035906 Memarian et al. Feb 2003 A1
20030036003 Shchori et al. Feb 2003 A1
20030042131 Johnson Mar 2003 A1
20030044665 Rastegar et al. Mar 2003 A1
20030048635 Knoerzer et al. Mar 2003 A1
20030057423 Shimoda et al. Mar 2003 A1
20030063883 Demaray et al. Apr 2003 A1
20030064292 Neudecker et al. Apr 2003 A1
20030068559 Armstrong et al. Apr 2003 A1
20030076642 Shiner et al. Apr 2003 A1
20030077914 Le et al. Apr 2003 A1
20030079838 Brcka May 2003 A1
20030091904 Munshi May 2003 A1
20030095463 Shimada et al. May 2003 A1
20030097858 Strohhofer et al. May 2003 A1
20030109903 Berrang et al. Jun 2003 A1
20030127319 Demaray et al. Jul 2003 A1
20030134054 Demaray et al. Jul 2003 A1
20030141186 Wang et al. Jul 2003 A1
20030143853 Celii et al. Jul 2003 A1
20030146877 Mueller Aug 2003 A1
20030152829 Zhang et al. Aug 2003 A1
20030162094 Lee et al. Aug 2003 A1
20030173207 Zhang et al. Sep 2003 A1
20030173208 Pan et al. Sep 2003 A1
20030174391 Pan et al. Sep 2003 A1
20030175142 Milonopoulou et al. Sep 2003 A1
20030178623 Nishiki et al. Sep 2003 A1
20030178637 Chen et al. Sep 2003 A1
20030180610 Felde et al. Sep 2003 A1
20030185266 Henrichs Oct 2003 A1
20030231106 Shafer Dec 2003 A1
20030232248 Iwamoto et al. Dec 2003 A1
20040008587 Siebott et al. Jan 2004 A1
20040015735 Norman Jan 2004 A1
20040023106 Benson et al. Feb 2004 A1
20040028875 Van Rijn et al. Feb 2004 A1
20040029311 Snyder et al. Feb 2004 A1
20040038050 Saijo et al. Feb 2004 A1
20040043557 Haukka et al. Mar 2004 A1
20040048157 Neudecker et al. Mar 2004 A1
20040053124 LaFollette et al. Mar 2004 A1
20040058237 Higuchi et al. Mar 2004 A1
20040072067 Minami et al. Apr 2004 A1
20040077161 Chen et al. Apr 2004 A1
20040078662 Hamel et al. Apr 2004 A1
20040081415 Demaray et al. Apr 2004 A1
20040081860 Hundt et al. Apr 2004 A1
20040085002 Pearce May 2004 A1
20040101761 Park et al. May 2004 A1
20040105644 Dawes Jun 2004 A1
20040106038 Shimamura et al. Jun 2004 A1
20040106045 Ugaji Jun 2004 A1
20040106046 Inda Jun 2004 A1
20040118700 Schierle-Arndt et al. Jun 2004 A1
20040126305 Chen et al. Jul 2004 A1
20040151986 Park et al. Aug 2004 A1
20040161640 Salot Aug 2004 A1
20040175624 Luski et al. Sep 2004 A1
20040188239 Robison et al. Sep 2004 A1
20040209159 Lee et al. Oct 2004 A1
20040212276 Brantner et al. Oct 2004 A1
20040214079 Simburger et al. Oct 2004 A1
20040219434 Benson et al. Nov 2004 A1
20040245561 Sakashita et al. Dec 2004 A1
20040258984 Ariel et al. Dec 2004 A1
20040259305 Demaray et al. Dec 2004 A1
20050000794 Demaray et al. Jan 2005 A1
20050006768 Narasimhan et al. Jan 2005 A1
20050048802 Zhang et al. Mar 2005 A1
20050070097 Barmak et al. Mar 2005 A1
20050072458 Goldstein Apr 2005 A1
20050079418 Kelley et al. Apr 2005 A1
20050095506 Klaassen May 2005 A1
20050105231 Hamel et al. May 2005 A1
20050110457 LaFollette et al. May 2005 A1
20050112461 Amine et al. May 2005 A1
20050118464 Levanon Jun 2005 A1
20050130032 Krasnov et al. Jun 2005 A1
20050133361 Ding et al. Jun 2005 A1
20050141170 Honda et al. Jun 2005 A1
20050142447 Nakai et al. Jun 2005 A1
20050147877 Tarnowski et al. Jul 2005 A1
20050158622 Mizuta et al. Jul 2005 A1
20050170736 Cok Aug 2005 A1
20050175891 Kameyama et al. Aug 2005 A1
20050176181 Burrows et al. Aug 2005 A1
20050181280 Ceder et al. Aug 2005 A1
20050183946 Pan et al. Aug 2005 A1
20050189139 Stole Sep 2005 A1
20050208371 Kim et al. Sep 2005 A1
20050239917 Nelson et al. Oct 2005 A1
20050255828 Fisher Nov 2005 A1
20050266161 Medeiros et al. Dec 2005 A1
20060019504 Taussig Jan 2006 A1
20060021214 Jenson et al. Feb 2006 A1
20060021261 Face Feb 2006 A1
20060040177 Onodera et al. Feb 2006 A1
20060046907 Rastegar et al. Mar 2006 A1
20060054496 Zhang et al. Mar 2006 A1
20060057283 Zhang et al. Mar 2006 A1
20060057304 Zhang et al. Mar 2006 A1
20060063074 Jenson et al. Mar 2006 A1
20060071592 Narasimhan et al. Apr 2006 A1
20060134522 Zhang et al. Jun 2006 A1
20060155545 Janye Jul 2006 A1
20060201583 Michaluk et al. Sep 2006 A1
20060210779 Weir et al. Sep 2006 A1
20060222954 Skotheim et al. Oct 2006 A1
20060234130 Inda Oct 2006 A1
20060237543 Goto et al. Oct 2006 A1
20060255435 Fuergut et al. Nov 2006 A1
20060286448 Snyder et al. Dec 2006 A1
20070009802 Lee et al. Jan 2007 A1
20070021156 Hoong et al. Jan 2007 A1
20070023275 Tanase et al. Feb 2007 A1
20070037058 Visco et al. Feb 2007 A1
20070053139 Zhang et al. Mar 2007 A1
20070064396 Oman Mar 2007 A1
20070087230 Jenson et al. Apr 2007 A1
20070091543 Gasse et al. Apr 2007 A1
20070125638 Zhang et al. Jun 2007 A1
20070141468 Barker Jun 2007 A1
20070148065 Weir et al. Jun 2007 A1
20070148553 Weppner Jun 2007 A1
20070151661 Mao et al. Jul 2007 A1
20070164376 Burrows et al. Jul 2007 A1
20070166612 Krasnov et al. Jul 2007 A1
20070184345 Neudecker et al. Aug 2007 A1
20070196682 Visser et al. Aug 2007 A1
20070202395 Snyder et al. Aug 2007 A1
20070205513 Brunnbauer et al. Sep 2007 A1
20070210459 Burrows et al. Sep 2007 A1
20070222681 Greene et al. Sep 2007 A1
20070224951 Gilb et al. Sep 2007 A1
20070229228 Yamazaki et al. Oct 2007 A1
20070235320 White et al. Oct 2007 A1
20070264564 Johnson et al. Nov 2007 A1
20070278653 Brunnbauer et al. Dec 2007 A1
20070298326 Angell et al. Dec 2007 A1
20080003496 Neudecker et al. Jan 2008 A1
20080008936 Mizuta et al. Jan 2008 A1
20080014501 Skotheim et al. Jan 2008 A1
20080057397 Skotheim et al. Mar 2008 A1
20080150829 Lin et al. Jun 2008 A1
20080213672 Skotheim et al. Sep 2008 A1
20080233708 Hisamatsu Sep 2008 A1
20080254575 Fuergut et al. Oct 2008 A1
20080261107 Snyder et al. Oct 2008 A1
20080263855 Li et al. Oct 2008 A1
20080286651 Neudecker et al. Nov 2008 A1
20090092903 Johnson et al. Apr 2009 A1
20090124201 Meskens May 2009 A1
20090181303 Neudecker et al. Jul 2009 A1
20090302226 Schieber et al. Dec 2009 A1
20090308936 Nitzan et al. Dec 2009 A1
20090312069 Peng et al. Dec 2009 A1
20100001079 Martin et al. Jan 2010 A1
20100032001 Brantner Feb 2010 A1
20100086853 Venkatachalam et al. Apr 2010 A1
20110267235 Brommer et al. Nov 2011 A1
20110304430 Brommer et al. Dec 2011 A1
Foreign Referenced Citations (132)
Number Date Country
1415124 Apr 2003 CN
1532984 Sep 2004 CN
19824145 Dec 1999 DE
10 2005 014 427 Sep 2006 DE
10 2006 054 309 Nov 2006 DE
10 2008 016 665 Oct 2008 DE
102007030604 Jan 2009 DE
0 510 883 Oct 1992 EP
0 639 655 Feb 1995 EP
0 652 308 May 1995 EP
0 820 088 Jan 1998 EP
1 068 899 Jan 2001 EP
0 867 985 Feb 2001 EP
1 092 689 Apr 2001 EP
1 189 080 Mar 2002 EP
1 713 024 Oct 2006 EP
2806198 Sep 2001 FR
2 861 218 Apr 2005 FR
55-009305 Jan 1980 JP
56-076060 Jun 1981 JP
56-156675 Dec 1981 JP
60-068558 Apr 1985 JP
61-269072 Nov 1986 JP
62-267944 Nov 1987 JP
63-290922 Nov 1988 JP
2000-162234 Nov 1988 JP
2-054764 Feb 1990 JP
2-230662 Sep 1990 JP
03-036962 Feb 1991 JP
4-058456 Feb 1992 JP
4-072049 Mar 1992 JP
6-010127 Jan 1994 JP
6-100333 Apr 1994 JP
7-233469 May 1995 JP
7-224379 Aug 1995 JP
08-114408 May 1996 JP
09-259932 Oct 1997 JP
10-026571 Jan 1998 JP
10-239187 Sep 1998 JP
11-204088 Jul 1999 JP
11-251518 Sep 1999 JP
2000-144435 May 2000 JP
2000-188099 Jul 2000 JP
2000-268867 Sep 2000 JP
2001-171812 Jun 2001 JP
2001-259494 Sep 2001 JP
2001-297764 Oct 2001 JP
2001-328198 Nov 2001 JP
2002-140776 May 2002 JP
2002-344115 Nov 2002 JP
2003-17040 Jan 2003 JP
03-133420 May 2003 JP
2003-347045 Dec 2003 JP
2004-071305 Mar 2004 JP
2004 146297 May 2004 JP
2004-149849 May 2004 JP
2004-158268 Jun 2004 JP
2004-273436 Sep 2004 JP
2005-256101 Sep 2005 JP
2005-286011 Oct 2005 JP
2002-026412 Feb 2007 JP
7-107752 Apr 2007 JP
20020007881 Jan 2002 KR
20020017790 Mar 2002 KR
20020029813 Apr 2002 KR
20020038917 May 2002 KR
20030033913 May 2003 KR
20030042288 May 2003 KR
20030085252 Nov 2003 KR
2241281 Nov 2004 RU
WO 9513629 May 1995 WO
WO 9623085 Aug 1996 WO
WO 9623217 Aug 1996 WO
WO 9727344 Jul 1997 WO
WO 9735044 Sep 1997 WO
WO 9847196 Oct 1998 WO
WO 9943034 Aug 1999 WO
WO 9957770 Nov 1999 WO
WO0021898 Apr 2000 WO
WO 0022742 Apr 2000 WO
WO 0028607 May 2000 WO
WO 0036665 Jun 2000 WO
WO 0060682 Oct 2000 WO
WO 0060689 Oct 2000 WO
WO 0062365 Oct 2000 WO
WO 0101507 Jan 2001 WO
WO 0117052 Mar 2001 WO
WO 0124303 Apr 2001 WO
WO 0133651 May 2001 WO
WO 0139305 May 2001 WO
WO 0173864 Oct 2001 WO
WO 0173865 Oct 2001 WO
WO 0173866 Oct 2001 WO
WO 0173868 Oct 2001 WO
WO 0173870 Oct 2001 WO
WO 0173883 Oct 2001 WO
WO 0173957 Oct 2001 WO
WO 0182390 Nov 2001 WO
02 15301 Feb 2002 WO
WO 0212932 Feb 2002 WO
WO 0242516 May 2002 WO
WO 0247187 Jun 2002 WO
WO 02071506 Sep 2002 WO
WO 02101857 Dec 2002 WO
WO 03003485 Jan 2003 WO
WO 03005477 Jan 2003 WO
WO 03026039 Mar 2003 WO
WO 03036670 May 2003 WO
WO 03069714 Aug 2003 WO
WO 03080325 Oct 2003 WO
WO 03083166 Oct 2003 WO
WO 2004012283 Feb 2004 WO
WO 2004021532 Mar 2004 WO
WO 2004061887 Jul 2004 WO
WO 2004077519 Sep 2004 WO
WO 2004086550 Oct 2004 WO
WO 2004093223 Oct 2004 WO
WO 2004106581 Dec 2004 WO
WO 2004106582 Dec 2004 WO
WO 2005008828 Jan 2005 WO
WO 2005013394 Feb 2005 WO
WO 2005038957 Apr 2005 WO
WO 2005067645 Jul 2005 WO
WO 2005085138 Sep 2005 WO
WO 2005091405 Sep 2005 WO
WO 2006063308 Jun 2006 WO
WO 2006085307 Aug 2006 WO
WO 2007016781 Feb 2007 WO
WO-2007019855 Feb 2007 WO
WO 2007027535 Mar 2007 WO
WO 2007095604 Aug 2007 WO
WO 2008036731 Mar 2008 WO
Non-Patent Literature Citations (168)
Entry
Sarro, P., “Silicon Carbide as a New MEMS Technology,” Sensors and Actuators 82, 210-218 (2000).
Hwang et al., “Characterization of Sputter-Deposited LiMn2O4 Thin Films for Rechargeable Microbatteries,” 141(12) J. Electrochem. Soc. 3296-99 (1994).
Jones et al., 53-56 Solid State Ionics 628 (1992).
Mattox “Handbook of Physical Vapor Deposition (PVD) Processing, Society of Vacuum Coaters,” Albuquerque, New Mexico 660f and 692ff, Noyes Publications (1998).
Abraham, K.M. et al., “Inorganic-organic composite solid polymer electrolytes,” 147(4) J. Electrochem. Soc. 1251-56 (2000).
Abrahams, I., “Li6Zr2O7, a new anion vacancy ccp based structure, determined by ab initio powder diffraction methods,” 104 J. Solid State Chem. 397-403 (1993).
Affinito, J.D. et al., “PML/oxide/PML barrier layer performance differences arising from use of UV or electron beam polymerization of the PML layers,” Thin Solid Films 308-309: 19-25 (1997).
Affinito, J.D. et al., “Polymer-oxide transparent barrier layers,” Society of Vacuum Coaters, 39th Ann. Technical Conference Proceedings, May 5-10, 1996, Philadelphia, PA, pp. 392-397 (1996).
Alder, T. et al., “High-efficiency fiber-to-chip coupling using low-loss tapered single-mode fiber,” IEEE Photonics Tech. Lett. 12(8): 1016-1018 (2000).
Almeida, V.R. et al., “Nanotaper for compact mode conversion,” Optics Letters 28(15): 1302-1304 (2003).
Amatucci, G. et al., “Lithium scandium phosphate-based electrolytes for solid state lithium rechargeable microbatteries,” 60 Solid State Ionics 357-65 (1993).
Anh et al., “Significant Suppression of Leakage Current in (Ba,Sr)TiO3 Thin Films by Ni or Mn Doping,” J. Appl. Phys.,92(5): 2651-2654 (Sep. 2002).
Appetecchi, G.B. et al., “Composite polymer electrolytes with improved lithium metal electrode interfacial properties,” 145(12) J. Electrochem. Soc. 4126-32 (1998).
Asghari, M. and Dawnay, E., “ASOC™—a manufacturing integrated optics technology,” SPIE 3620: 252-262 (Jan. 1999).
Barbier, D. et al., “Amplifying four-wavelength combiner, based on erbium/ytterbium-doped waveguide amplifiers and integrated splitters,” IEEE Photonics Tech. Lett. 9:315-317 (1997).
Barbier, D., “Performances and potential applications of erbium doped planar waveguide amplifiers and lasers,” Proc. OAA, Victoria, BC, Canada, pp. 58-63 (Jul. 21-23, 1997).
Bates, J.B. et al., “Electrical properties of amorphous lithium electrolyte thin films,” 53-56 Solid State Ionics 647-54 (1992).
Bates et al., “Thin-Film Lithium Batteries” in New Trends in Electrochemical Technology: Energy Storage Systems for Electronics (T. Osaka & M. Datta eds. Gordon and Breach 2000).
Beach R.J., “Theory and optimization of lens ducts,” Applied Optics 35(12): 2005-2015 (1996).
Belkind, A. et al., “Pulsed-DC Reactive Sputtering of Dielectrics: Pulsing Parameter Effects,” 43rd Annual Technical Conference Proceedings (2000).
Belkind, A. et al., “Using pulsed direct current power for reactive sputtering of Al2O3,” J. Vac. Sci. Technol. A 17(4): 1934-1940 (1999).
Bestwick, T., “ASOC™ silicon integrated optics technology,” SPIE 3631: 182-190 (1999).
Borsella, E. et al., “Structural incorporation of silver in soda-lime glass by the ion-exchange process: a photoluminescence spectroscopy study,” Applied Physics A 71: 125-132 (2000).
Byer, R.L., “Nonlinear optics and solid-state lasers:2000,” IEEE J. Selected Topics in Quantum Electronics 6(6): 911-930 (2000).
Campbell, S.A. et al., “Titanium dioxide (TiO2)-based gate insulators,” IBM J. Res. Develop. 43(3): 383-392 (1999).
Chang, C.Y. and Sze, S.M. (eds.), in ULSI Technology, The McGraw-Hill Companies, Inc., Nyew York, Chapter 4, pp. 169-170 and 226-231 (1996).
Chen, G. et al., “Development of supported bifunctional electrocatalysts for unitized regenerative fuel cells,” J. Electrochemical Society 149(8): A1092-A1099 (2002).
Choi, Y.B. et al., “Er-Al-codoped silicate planar light waveguide-type amplifier fabricated by radio-frequency sputtering,” Optics Letters 25(4): 263-265 (2000).
Choy et al., “Eu-Doped Y2O3 Phosphor Films Produced by Electrostatic-Assisted Chemical Vapor Deposition,” J. Mater. Res. 14(7): 3111-3114 (Jul. 1999).
Cocorullo, G. et al., “Amorphous silicon waveguides and light modulators for integrated photonics realized by low-temperature plasma-enhanced chemical-vapor deposition,” Optics Lett. 21(24): 2002-2004 (1996).
Cooksey, K. et al., “Predicting permeability & Transmission rate for multilayer materials,” Food Technology 53(9): 60-63 (1999).
Crowder, M.A. et al., “Low-temperature single-crystal Si TFT's Fabricated on Si films processed via sequential lateral solidification,” IEEE Electron Device Lett. 19(8): 306-308 (1998).
Delavaux, J-M. et al., “Integrated optics erbium ytterbium amplifier system in 10Gb/s fiber transmission experiment,” 22nd European Conference on Optical Communication, Osla, I.123-I.126 (1996).
Delmas, C. et al., “Des conducteurs ioniques pseudo-bidimensionnels Li8MO6 (M=Zr, Sn), Li7LO6 (L=Nb, Ta) et Li6In2O6,” 14 Mat. Res. Bull. 619-25 (1979).
Distributed Energy Resources: Fuel Cells, Projects, 4 pages http://www.eere.energy.gov/der/fuel—cells/projects.html (2003).
Dorey, R.A., “Low temperature micromoulding of functional ceramic devices,” Grant summary for GR/S84156/01 for the UK Engineering and Physical Sciences Research Council, 2 pages (2004).
DuPont Teijin Films, Mylar 200 SBL 300, Product Information, 4 pages (2000).
Electrometals Technologies Limited, Financial Report for 2002, Corporate Directory, Chairman's review, Review of Operations, 10 pages (2002).
E-Tek website: FAQ, Inside E-Tek, E-TEk News, Products; http://www.eteck-inc.com/, 10 pages (2003).
Flytzanis, C. et al., “Nonlinear optics in composite materials,” in Progress in Optics XXIX, Elsevier Science Publishers B.V., pp. 323-425 (1991).
Frazao, O. et al., “EDFA gain flattening using long-period fibre gratings based on the electric arc technique,” Proc. London Comm. Symp. 2001, London, England, 3 pages (2001).
Fujii, M. et al., “1.54 μm photoluminescence of Er14 doped into SiO2 films containing Si nanocrystals: evidence for energy transfer from Si nanocrystals for Er3+ ,” Appl. Phys. Lett. 71(9): 1198-1200 (1997).
Garcia, C. et al., “Size dependence of lifetime and absorption cross section of Si nanocrystals embedded in SiO2,” Appl. Phys. Lett. 82(10): 1595-1597 (2003).
Goossens, A. et al., “Sensitization of TiO2 with p-type semiconductor polymers,” Chem. Phys. Lett. 287:148 (1998).
Greene, J.E. et al., “Morphological and electrical properties of rf sputtered Y2O3-doped ZrOz thin films,” J. Vac. Sci. Tech. 13(1): 72-75 (1976).
Han, H.-S et al., “Optical gain at 1.54 μm in Erbium-doped Silicon nanocluster sensitized waveguide,” Appl. Phys. Lett. 79(27): 4568-4570 (2001).
Hayakawa, T. et al., “Enhanced fluorescence from Eu3+ owing to surface plasma oscillation of silver particles in glass,” J. Non-Crystalline Solids 259: 16-22 (1999).
Hayakawa, T. et al., “Field enhancement effect of small Ag particles on the flourescence from Eu3+ -doped SiO2 glass,” Appl. Phys. Lett. 74(11): 1513-1515 (1999).
Hayfield, P.C.S., I Development of a New Material-Monolithic Ti4O7 Ebonix® Ceramic, Royal Society of Chemistry, Cambridge, Table of Contents, 4 pages (2002).
Hehlen, M.P. et al., “Spectroscopic properties of E3+ -and Yb3+ -doped soda-lime silicate and aluminosilicate glasses,” Physical Review B 56(15): 9302-9318 (1997).
Hehlen, M.P. et al., “Uniform upconversion in high-concentration Er3+ -doped soda lime silicate and aluminosilicate glasses,” Optics Letters 22(11): 772-774 (1997).
Horst, F. et al., “Compact, tunable optical devices in silicon-oxynitride waveguide technology,” Top. Meeting Integrated Photonics Res. '00, Quebec, Canada, p. IThF1, 3 pages (2000).
Howson, R.P., “The reactive sputtering of oxides and nitrides,” Pure & Appl. Chem. 66(6): 1311-1318 (1994).
Hu, Y-W. et al., “Ionic conductivity of lithium phosphate-doped lithium orthosilicate,” 11 Mat. Res. Bull. 1227-30 (1976).
Hubner, J. and Guldberg-Kjaer, S., “Planar Er- and Yb-doped amplifiers and lasers,” COM Technical University of Denmark, 10th European Conf. on Integrated Optics, Session WeB2, pp. 71-74 (2001).
Hwang et al., “Characterization of sputter-deposited LiMn2O4 thin films for rechargeable microbatteries,” 141(12) J. Electrochem. Soc. 3296-99 (1994).
Hwang, M-S. et al., “The effect of pulsed magnetron sputtering on the properties of iridium tin oxide thin films,” Surface and Coatings Tech. 171: 29-33 (2003).
Im, J.S. and Sposili, R.S., “Crystalline Si films for integrated active-matrix liquid crystal displays,”MRS Bulletin, pp. 39-48 (1996).
Im, J.S. et al., “Controlled super-lateral growth of Si-films for microstructural manipulation and optimization,” Physica Status Solidi (A) 166(2): 603-617 (1998).
Im, J.S. et al., “Single-crystal Si films for thin-film transistor devices,”Appl. Physics Lett. 70(25): 3434-3436 (1997).
Itoh, M. et al., “Large reduction of singlemode-fibre coupling loss in 1.5% Δ planar lightwave circuits using spot-size converters,” Electronics Letters 38(2): 72-74 (2002).
Jackson, M.K. and Movassaghi, M., “An accurate compact EFA model,” Eur. Conf. Optical Comm., Munich, Germany, 2 pages (2000).
Janssen, R. et al., “Photoinduced electron transfer from conjugated polymers onto nanocrystalline TiO2,” Synthet. Metal., 1 page (1999).
Johnson, J.E. et al., “Monolithically integrated semiconductor optical amplifier and electroabsorption modulator with dual-waveguide spot-size converter input,” IEEE J. Selected topics in Quantum Electronics 6(1): 19-25 (2000).
Jonsson, L.B. et al., “Frequency response in pulsed DC reactive sputtering processes,” Thin Solid Films 365: 43-48 (2000).
Kato, K. and Inoue, Y., “Recent progress on PLC hybrid integration,”SPIE 3631: 28-36 (1999).
Kato, K. and Tohmori, Y., “PLC hybrid integration technology and its application to photonic components,” IEEE J. Selected Topics in Quantum Electronics 6(1): 4-13 (2000).
Kelly, P.J. and Arnell, R.D., “Control of the structure and properties of aluminum oxide coatings deposited by pulsed magnetron sputtering,” J. Vac. Sci. Technol. A 17(3): 945-953 (1999).
Kelly, P.J. et al., “A novel technique for the depositionon of aluminum-doped zinc oxide films,” Thin Solid Films 426(1-2): 111-116 (2003).
Kelly, P.J. et al., “Reactive pulsed magnetron sputtering process for alumina films,” J. Vac. Sci. Technol. A 18(6): 2890-2896 (2000).
Kik, P.G. and Polman, A., “Gain limiting process in Er-doped Si nanocrystal waveguides in SiO2,” J. Appl. Phys. 91(1): 536-536 (2002).
Kim et al., “Correlation Between the Microstructures and the Cycling Performance of RuO2 Electrodes for Thin-Film Microsupercapacitros,” J. Vac. Sci. Technol. B20(5): 1827-1832 (Sep. 2002).
Kim, D-W. et al. “Mixture Behavior and Microwave Dielectric Properties in the Low-fired TiO2-CuO System,” Jpn. J. Appl. Phys. 39:2696-2700 (2000).
Kim, H-K. et al., “Characteristics of rapid-thermal-annealed LiCoO2 cathode film for an all-solid-state thin film microbattery,” J. Vac. Sci. Technol. A 22(4): 1182-1187 (2004).
Kim, J-Y. et al. “Frequency-dependent pulsed direct current magnetron sputtering of titanium oxide films,” J. Vac. Sci. Technol. A 19(2):429-434 (2001).
Ladouceur, F. and Love, J.D., in: Silica-based Buried Channel Waveguides and Devices, Chapman & Hall, London, Table of Contents, 6 pages (1996).
Ladouceur, F. et al., “Effect of side wall roughness in buried channel waveguides,” IEEE Proc. Optoelectron, 141(4):242-248 (1994).
Lamb, W. and Zeiler, R., Designing Non-Foil Containing Skins for Vacuum Insulation Panel (VIP) Application, Vuoto XXVIII(1-2):55-58 (1999).
Lamb, W.B. “Designing Nonfoil Containing Skins for VIP Applications,” DuPont VIA Symposium Presentation, 35 Pages (1999).
Lange, M.R. et al, “High Gain Ultra-Short Length Phosphate glass Erbium-Doped Fiber Amplifier Material,” OSA Optical Fiber Communications (OFC), 3 Pages (2002).
Laporta, P. et al., “Diode-pumped cw bulk Er: Yb: glass laser,” Optics Letters 16(24):1952-1954 (1991).
Laurent-Lund, C. et al., “PECVD Grown Multiple Core Planar Waveguides with Extremely Low Interface Reflections and Losses,” IEEE Photonics Tech. Lett. 10(10):1431-1433 (1998).
Lee, B.H. et al., “Effects of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silion,” Appl. Phys. Lett. 74(21):3143-3145 (1999).
Lee, K.K. et al., “Effect of size and roughness on light transmission in a Si/SiO2 waveguide: Experiments and model,” Appl. Phys. Lett. 77(11):1617-1619 (2000).
Love, J.D. et al., “Quantifying Loss Minimisation in Single-Mode Fibre Tapers,” Electronics Letters 22(17):912-914 (1986).
Mardare, D. and Rusu, G.I., “On the structure of Titanium Oxide Thin Films,” Andalele Stiintifice Ale Universitatii IASI, Romania, pp. 201-208 (1999).
Marques, P.V.S. et al., “Planar Silica-on-Silicon Waveguide Lasers Based in Two Layers Core Devices,” 10th European Conference on Integrated Optics, Session WeB2, pp. 79-82 (2001).
Meijerink, A. et al, “Luminescence of Ag in Crystalline and Glassy Srb4O7,” J. Physics Chem. Solids 54(8):901-906 (1993).
Mesnaoui, M. et al, “Spectroscopic properties of Ag+ ions in phosphate glasses of NaPO3-AgPO3 system,”Eur. J. Solid State Inorg. Chem. 29:1001-1013 (1992).
Mitomi, O. et al., “Design of a Single-Mode Tapered Waveguide for Low-Loss Chip-to-Fiber Coupling,” IEEE J. Quantum Electronics 30(8): 1787-1793 (1994).
Mizuno, Y. et al “Temperature dependence of oxide decomposition on titanium surfaces in UHV,” J. Vac. Sci. & Tech. A. 20(5): 1716-1721 (2002).
Neudecker, B. et al., “Li9SiAlO8: a lithium ion electrolyte for voltage above 5.4 V,” 143(7) J. Electrochem. Soc. 2198-203 (1996).
Ohkubo, H. et al., Polarization-Insensitive Arrayed-Waveguide Grating Using Pure SiO2 Cladding, Fifth Optoelectronics and Communication Conference (OECC 2000) Technical Digest, pp. 366-367 (2000).
Ohno, H. et al., “Electrical conductivity of a sintered pellet of octalithium ziconate,” 132 J. Nucl. Mat. 222-30 (1985).
Ohmi, S. et al., “Rare earth mental oxides for high-K fate insulator,” VLSI Design 2004, 1 Page (2004).
Ohtsuki, T., et al., “Gain Characteristics of high concentration Er3+ -doped phosphate glass waveguide,” J. Appl. Phys. 78(6):3617-3621 (1995).
Ono, H. et al., “Design of a Low-loss Y-branch Optical Waveguide,” Fifth Optoelectronic and Communications Conference (OECC 2000) Technical Digest, pp. 502-503 (2000).
Padmini, P. et al., “Realization of High Tunability Barium Strontium Titanate Thin Films by rf Megnetron Sputtering,” Appl. Phys. Lett. 75(20):3186-3188 (1999).
Pan, T. et al., “Planar Er3+ -doped aluminosilicate waveguide amplifier with more than 10 dB gain across C-band,” Optical Society of America, 3 pages (2000).
Park et al., “Characteristics of Pt Thin Film on the Conducting Ceramics TiO and Ebonex (Ti4O7) as Electrode Materials,” Thin Solid Films 258: 5-9 (1995).
Peters, D.P. et al., “Formation mechanism of silver nanocrystals made by ion irradiation of Na+-Ag+ ion-exchanged sodalime silicate glass,” Nuclear Insruments and Methods in Physics Research B 168:237-244 (2000).
Rajarajan, M. et al., “Numerical Study of Spot-Size Expanders fro an Efficient OEIC to SMF Coupling,” IEEE Photonics Technology Letters 10(8): 1082-1084 (1998).
Ramaswamy, R.V. et al., “Ion-Exchange Glass Waveguides: A Review,” J. Lightwave Technology 6(6): 984-1002 (1998).
Roberts, S.W. et al., “The Photoluminescence of Erbium-doped Silicon Monoxide,” University of Southampton , Department of Electronics and Computer Science Research Journal, 7 pages (1996).
Saha et al., “Large Reduction of Leakage Current by Graded-Layer La Doping in (Bs0.5,Sr0.5)TiO3 Thin Films,” Appl. Phys. Lett. 79(1): 111-113 (Jul. 2001).
Sanyo Vacuum Industries Co., Ltd. Products Infor, TiO2, (2003), 1 page, http://www.sanyovac.co.jp/Englishweb/products?ETiO2.htm.
Schermer, R. et al., “Investigation of Mesa Dielectric Waveguides,” Proceedings of the OSA Integrated Photonics Research Topical Meeting and Exhibit, Paper No. IWB3, 3 pages (2001).
Schiller, S. et al., “PVD Coating of Plastic Webs and Sheets with High Rates on Large Areas,” European Materials Research Society 1999 Spring Meeting, Jun. 1-4, 1999, Strasbourg, France, 13 pages (1999).
Scholder, V. et al., “Über Zirkonate, Hafnate und Thorate von Barium, Strontium, Lithium und Natrium,” Zeitschrift für Anorganische und Allgemeine Chemie, Band 362, pp. 149-168 (1968).
Scholl, R., “Power Supplies for Pulsed Plasma Technologies: State-of-the-Art and Outlook,” Advances Energy Industries, Inc. 1-8 (1999).
Scholl, R., “Power Systems for Reactive Sputtering of Insulating Films,” Advances Energy Industries, Inc., 1-8 (Aug. 2001).
Second International Symposium of Polymer Surface Modification: Relevance to Adhesion, Preliminary Program, 13 pages (1999).
Seventh International Conference on TiO2 Photocatalysis: Fundamentals & Applications, Toronto, Ontario, Canada, Final Program, 7 pages (Nov. 17-21, 2002).
Sewell, P. et al., “Rib Waveguide Spot-Size Transformers: Modal Properties,” J Lightwave Technology 17(5):848-856 (1999).
Shaw, D.G. et al., “Use of Vapor Deposited Acrylate Coatings to Improve the Barrier Properties of Metallized Film,” Society of Vacuum Coaters, 37th Annual Technical Conference Proceedings, pp. 240-244 (1994).
Shin, J.C. et al. “Dielectric and Electrical Properties of Sputter Grown (Ba,Se)TiO3 Thin Films,” J. Appl. Phys. 86(1):506-513 (1999).
Shmulovich, J. et al., “Recent progress in Erbium-doped waveguide amplifiers,” Bell Laboratories, pp. 35-37 (1999).
Slooff, L.H. et al., “Optical properties of Erbium-doped organic polydentate cage complexes,” J. Appl. Phys. 83(1):497-503 (1998).
Smith, R.E. et al., “Reduced Coupling Loss Using a Tapered-Rib Adiabatic-Following Fiber Coupler,” IEEE Photonics Technology Lett. 8(8):1052-1054 (1996).
Snoeks, E. et al., “Cooperative upconversion in erbium-implanted soda-lime silicate glass optical waveguides,” J. Opt. Soc. Am. B 12(8): 1468-1474 (1995).
Strohhofer, C. and Polman, A. “Energy transfer to Er3+ in Ag ion-exchanged glass,” FOM Institute for Atomic and Molecular Physics, 10 pages (2001).
Sugiyama, A. et al., “Gas Permeation Through the Pinholes of Plastic Film Laminated with Aluminum Foil,” Vuoto XXVIII(1-2):51-54 (1999).
Tervonen, A. “Challenges and opportunities for integrated optics in optical networks,” SPIE 3620:2-11 (1999).
Ting, C.Y. et al., “Study of Planarized sputter-deposited SiO2” J. Vac. Sci Technol, 15(3):1105-1112 (1978).
Tomaszewski, H. et al., “Yttria-stabilized zirconia thin films grown by reactive r.f. magnetron sputtering,” Thin Solid Films 287: 104-109 (1996).
Triechel, O. and Kirchhoff, V., “The influences of pulsed magnetron sputtering on topography and crystallinity of TiO2 films on glass,” Surface and Coating Technology 123:268-272 (2000).
Tukamoto, H. and West, A.R., “Electronic Conductivity of LiCoO2 and Its Enhancement by Magnesium Doping,” J. Electrochem. Soc 144(9):3164-3168 (1997).
Van Dover, R.B., “Amorphous Lanthanide-Doped TiO2 Dielectric Films,” Appl. Phys. Lett. 74(20):3041-3043 (1999).
Viljanen, J. and Leppihalme, M., “Planner Optical Coupling Elements for Multimode Fibers with Two-Step Ion Migration Process,” Applied Physics 24(1):61-63 (1981).
Villegas, M.A. et al., “Optical spectroscopy of a soda lime glass exchanged with silver,” Phys. Chem. Glasses 37(6):248-253 (1996).
Von Rottkay, K. et al., “Influences of stoichiometry on electrochromic cerium-titanium oxide compounds,” Presented at the 11th Int'l Conference of Solid State Ionics, Honolulu, Hawaii, Nov. 19, 1997, Published in Solid State Ionics 113-115:425-430. (1998).
Wang, B. et al., “Characterization of Thin-Film Rechargeable Lithium Batteries with Lithium Cobalt Oxide Cathodes,” J. Electrochem. Soc. 143:3203-13 (1996).
Westlinder, J. et al., “Simulations and Dielectric Characterization of Reactive de Magnetron Cosputtered (Ta2O3)1-x(TiO2)x Thin Films,” J Vac. Sci. Technol. B 20(3):855-861 (May/Jun. 2002).
Wilkes, K.E., “Gas Permeation Through Vacuum Barrier Films and its Effect on VIP Thermal Performance,” presented at the Vacuum Insulation Panel Symp., Baltimore, Maryland, 21 pages (May 3, 1999).
Yanagawa, H. et al., “Index-and-Dimensional Taper and Its Application to Photonic Devices,” J. Lightwave Technology 10(5):587-591 (1992).
Yoshikawa, K. et al., “Spray formed aluminum alloys for sputtering targets,” Powder Metallurgy 43(3): 198-199 (2000).
Yu, X. et al., “A stable thin-film lithium electrolyte: lithium phosphorus oxynitride,” 144(2) J. Electrochem. Soc. 524-532 (1997).
Zhang, H. et al., “High Dielectric Strength, High k TiO2 Films by Pulsed DC, Reactive Sputter Deposition,” 5 pages (2001).
Dobkin, D.M., “Silicon Dioxide: Properties and Applications”.
Restriction Requirement dated Feb. 22, 2010, in U.S. Appl. No. 11/687,032.
Response to Restriction Requirement dated Mar. 26, 2010, in U.S. Appl. No. 11/687,032.
Preliminary Amendment dated May 4, 2010, in U.S. Appl. No. 11/687,032.
Non-Final Rejection dated Jul. 9, 2010, in U.S. Appl. No. 11/687,032.
Amendment/Response to Non-Final Office Action dated Oct. 11, 2010, in U.S. Appl. No. 11/687,032.
Non-Final Rejection dated Dec. 28, 2010, in U.S. Appl. No. 11/687,032.
Amendment/Response to Office Action dated Apr. 5, 2011, in U.S. Appl. No. 11/687,032.
Non-Final Rejection dated May 26, 2011, in U.S. Appl. No. 12/111,388.
Notice of Allowance dated Jun. 24, 2011, in U.S. Appl. No. 11/687,032.
Examiner's Amendment dated Jul. 28, 2011, in U.S. Appl. No. 11/687,032.
Hill, R. et al., “Large Area Deposition by Mid-Frequency AC Sputtering,” Society of Vacuum Coaters, 41st Annual Tech. Conference Proceedings, 197-202 (1998).
Macák, Karol et al, “Ionized Sputter Depostition Using an Extremely High Plasma Density Pulsed Magnetron Discharge,” J. Vac. Sci. Technol. A 18(4):1533-37 (2000).
Balanis, Constantine A., “Antenna Theory: Analysis and Design,” 3rd Ed., pp. 817-820 (John Wiley & Sons, Inc. Publication, 2005).
Inaguma, Yoshiyuki, “High Ionic Conductivity in Lithium Lanthanum Titanate,” Solid State Communications,vol. 86, No. 10, pp. 689-693 (1993).
Guy, D., “Novel Architecture of Composite Electrode for Optimization of Lithium Battery Performance,” Journal of Power Sources 157, pp. 438-442 (2006).
Wolfenstine, J., “Electrical Conductivity and Charge Compensation in Ta Doped Li4Ti5O12,” Journal of Power Sources 180, pp. 582-585 (2008).
Balanis, Constantine A., “Antenna Theory: Analysis and Design,” 3rd Ed., pp. 811-820 (2005).
Jones and Akridge, “A thin film solid state microbattery,” Solid State Ionics 53-56 (1992), pp. 628-634.
Amendment/Response to Non-Final Office Action dated Aug. 26, 2011, in U.S. Appl. No. 12/111,388.
Notice of Allowance dated Oct. 24, 2011, in U.S. Appl. No. 11/687,032.
Final Office Action dated Nov. 9, 2011, in U.S. Appl. No. 12/111,388.
Amendment/Response to Final Office Action dated Jan. 6, 2012 in U.S. Appl. No. 12/111,388.
Advisory Action dated Jan. 19, 2012 in U.S. Appl. No. 12/111,388.
Amendment/Response to Final Office Action dated Feb. 7, 2012 in U.S. Appl. No. 12/111,388.
Adachi et al., Thermal and Electrical Properties of Zirconium Nitride, 2005, Journal of Alloys and Compounds, 399, pp. 242-244.
Pichon et al., Zirconium Nitrides Deposited by Dual Ion Beam Sputtering: Physical Properties and Growth Modelling, 1999, Applied Surface Science, 150, pp. 115-124.
Celgard products description. retrieved from http://celgard.com/pdf/library/Celgard—Product—Comparison—10002.pdf on Jun. 17, 2011.
Starner, “Human-powered wearable computing” 35 (3 & 4) IBM Sys. J. 618-29 (1996).
Tarniowy et al., The effect of thermal treatment on the structure, optical and electrical properties of amorphous titanium nitride thin films,Thin Solid Films, vol. 311, (1997), pp. 93-100.
Related Publications (1)
Number Date Country
20100203377 A1 Aug 2010 US
Provisional Applications (1)
Number Date Country
60782792 Mar 2006 US
Continuations (1)
Number Date Country
Parent 11374282 Jun 2005 US
Child 11209536 US
Continuation in Parts (3)
Number Date Country
Parent 11561277 Nov 2006 US
Child 12764180 US
Parent 11209536 Aug 2005 US
Child 11561277 US
Parent 10215190 Aug 2002 US
Child 11374282 US