Claims
- 1. Apparatus for chemical vapor deposition of diamond, comprising:
- a closed reaction chamber having uncooled, uninsulated walls, at least one gas inlet and at least one exhaust means, said chamber being capable of being maintained at a pressure below atmospheric;
- sources of hydrogen and a hydrocarbon gas for the purpose of feeding said gases to said chamber through said gas inlet;
- at least one continuous uncooled substrate adapted to receive a diamond deposit;
- support means for supporting said substrate in said chamber; and
- at least one heated filament;
- wherein a surface of a wall in the reaction chamber contains an expediting metal having a melting point equal to or higher than copper.
- 2. The apparatus of claim 1 wherein the metal is selected from the group consisting of copper, nickel, platinum, palladium and molybdenum.
- 3. The apparatus of claim 2 wherein the metal is molybdenum.
- 4. The apparatus of claim 3 wherein most of the inner surface of the reaction chamber contains said molybdenum.
- 5. The apparatus of claim 3 wherein the wall is an inner wall.
- 6. The apparatus of claim 5 wherein the wall has a height greater than the height of the substrates and extends both above and below the substrates.
- 7. The apparatus of claim 6 wherein the inner wall is positioned between the substrates and an outer wall.
- 8. The apparatus of claim 7 wherein the inner wall is spaced a distance of from 1 to 25 mm. from the outer wall.
- 9. The apparatus of claim 5 wherein the outer wall is quartz.
- 10. The apparatus of claim 3 wherein the entire inner surface of the reaction chamber wall contains said molybdenum.
- 11. The apparatus of claim 3 wherein most of the inner surface of the reaction chamber wall contains said molybdenum.
- 12. The apparatus of claim 3 wherein the entire inner surface of the reaction chamber contains said molybdenum.
Parent Case Info
This application is a continuation of application Ser. No. 07/632,875, filed Dec. 24, 1990, now abandoned.
US Referenced Citations (7)
Foreign Referenced Citations (4)
Number |
Date |
Country |
297845 |
Jan 1989 |
EPX |
2128202 |
Jan 1973 |
DEX |
62-290869 |
Dec 1987 |
JPX |
63-195196 |
Aug 1988 |
JPX |
Non-Patent Literature Citations (2)
Entry |
"Handbook of Chemistry and Physics"; 61st ed. CRC Press; .COPYRGT.1981; Weast et al.; pp. E-12 to E-14. |
Singh et al., Applied Physics Letters, 52, 451-452 (1988). |
Continuations (1)
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Number |
Date |
Country |
Parent |
632875 |
Dec 1990 |
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