Tan, B. J.; Xiao, Y.; Suib, S. L.; Galasso, F. S.; "Thermodynamic Analysis of the Thermal Nitridation of Aluminum Oxide by Ammonia and Methane", Chemistry of Materials 4 (1992), 648-657. |
Kamiya, K.; Yoko, T.; Bessho, M.; "Nitridation of TiO.sub.2 Fibres Prepared by the Sol-Gel Method", Journal of Materials Science 22 (1987) 937-940. |
Kamiya, K.; Nishijima, T.; "Nitridation of the Sol-Gel-Derived Titanium Oxide Films by Heating in Ammonia Gas", Journal of American Ceramic Society 73 [9], 1990, 2750-2752. |
Shuskus, A. J.; Reeder, T. M.; Paradis, E. L.; "Rf-Sputtered Aluminum Nitride Films on Sapphire", Applied Physics Letters, vol. 24, No. 4, Feb. 15, 1974, 155-156. |
Yoshida, S.; Misawa, S.; Fujii, Y.; Takada, S.; Hayakawa, H.; Gonda, S.; Itoh, A.; "Reactive Molecular Beam Epitaxy of Aluminum Nitride", Journal of Vac. Sci. Technol., 16(4), Jul./Aug. 1979, 990-993. |
Bensalem, R.; Abid, A.; Sealy, B. J.; "Evaporated Aluminium Nitride Encapsulating Films", Thin Solid Films, 143 (1986) 141-153. |
Lee, B. I.; Einarsrud, M. A.; "Low-Temperature Synthesis of Aluminium Nitride Via Liquid-Liquid Mix Carbothermal Reduction", Journal of materials Science Letters 9 (1990) 1389-1391. |
Kuramoto, N.; Taniguchi, H.; "Transparent AlN Ceramics", Journal of Materials Science Letters 3 (1984) 471-474. |
Mitomo, M.; Yoshioka Y.; "Preparation of Si.sub.3 N.sub.4 and AlN Powders from Alkoxide-Derived Oxides by Carbothermal Reduction and Nitridation", Advanced Ceramic Materials, 2 [3A] 253-256 (1987). |
Silverman, L. D.; "Carbothermal Synthesis of Aluminum Nitride", Advanced Ceramic Materials, 3 [4] 418-419 (1988). |
Teusel, I.; Russel, C. J.; "Aluminium Nitride Coatings on Silicon Carbide Fibres, Prepared by Pyrolysis of a Polymeric Precursor", Journal of Materials Science 25 (1990) 3531-3534. |
Arnold, H.; Biste, L.; Bolze, D.; Eichhorn, G.; "Chemical and Plasmachemical Vapour Deposition of Aluminium Nitride Layers", Kristall und Technik, 1976, 11, 17-21. |
Roman, Y. G.; Adriaansen, A. P. M.; "Aluminium Nitride Films Made By Low Pressure Chemical Vapour Deposition: Preparation and Properties", Thin Solid Films, 169 (1989) 241-248. |
Manasevit, H. M.; Erdmann, F. M.; Simpson, W. I.; "The Use of Metalorganics in the Preparation of Semiconductor Materials-IV. The Nitrides of Aluminum and Gallium", Journal of Electrochemical Society, 1971, 118, 1864-1868. |
Ban, V. S.; "Mass Spectrometric Studies of Vapor-Phase Crystal Growth", Journal of Electrochemical Society, 1972, 119, 761. |
Morita, M.: Uesugi, N.; Isogai, S.; Tsubouchi, K.; Mikoshiba, N.; "Epitaxial Growth of Aluminum Nitride on Sapphire Using Metalorganic Chemical Vapor Deposition", Japanese Journal of Applied Physics, vol. 20, No. 1, Jan., 1981, 17-23. |
Mizuta, M.; Fujieda, S.; Matsumoto, Y.; Kawamura, T.; "Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine", Japanese Journal of Applied Physics, vol. 25, No. 12, Dec., 1986, L945-L948. |
Gaskill, D. K.; Bottka, N.; Lin, M. C.; "OMVPE of GaN and AlN Films by Metal Alkyls and Hydrazine", Journal of Crystal Growth 77 (1986) 418-423. |
Furukawa, Y.; "Chemical Vapor Deposition of Insulating Films Using Nitrogen Trifluoride", Japanese Journal of Applied Physics, vol. 23 (1984), No. 3, 376-377. |
Edgar, J. H.; Yu, Z. J.; Ahmed, A. U.; Rys, A.; "Low Temperature Metal-Organic Chemical Vapor Deposition of Aluminum Nitride With Nitrogen Trifluoride as the Nitrogen Source", Thin Solid Films, 189 (1990) L11-L14. |
Chu, T. L.; Ing, D. W.; Noreika, A. J.; "Epitaxial Growth of Aluminum Nitride", Solid-State Electronics, Pergamon Press 1967, vol. 10, 1023-1027. |
Callaghan, M. P.; Patterson, E.; Richards, B. P.; Wallace, C. A.; "The Growth, Crystallographic and Electrical Assessment of Epitaxial Layers of Aluminium Nitride on Corundum Substrates", Journal of Crystal Growth 22 (1974) 85-98. |
Pizzarello, F. A.; Coker, J. E.; "The Structural and Piezoelectric Properties of Epitaxial AlN on Al.sub.2 O.sub.3 ", Journal of Electronic Materials, vol. 4, No. 1, 1975, 25-36. |
Liu, J. K.; Lakin, K. M.; Wang, K. L.; "Growth Morphology and Surface-Acoustic-Wave Measurements of AlN Films on Sapphire", Journal of Applied Physics, vol. 46, No. 9, Sep. 1975, 3703-3706. |
Interrante, L. V.; Czekaj, C. L.; Hackney, M. L. J.; Sigel, G. A.; Schields, P. J.; Slack, G. A.; "An Investigation Into the Preparation, Properties, and Processing of SiC/AlN and Si.sub.3 N and Si.sub.3 N/AlN Solid Solutions from Organometallic Precursors", Material Research Society Symp. Proc. vol. 121, 465-470 (1988). |
Meikle, S.; Nomura, H.; Nakanishi, Y.; Hatanaka, Y.; "Reactions of Atomic Nitrogen and Trimethyl Aluminum Downstream from a Nitrogen Microwave Plasma", Journal of Applied Physics, 67 (1), Jan. 1990, 483-486. |
Sheng, T. Y.; Yu, Z. Q.; Collins, G. J.; "Disk Hydrogen Plasma Assisted Chemical Vapor Deposition of Aluminum Nitride"; Applied Physics Letter 52 (7), Feb. 15, 1988, 576-578. |
Hasegawa, F.; Takahashi, T.; Kubo, K.; Nannichi, Y.; "Plasma CVD of Amorphous AlN from Metalorganic Al Source and Properties of the Deposited Films", Japanese Journal of Applied Physics, vol. 26, No. 9, Sep. 1987, 1555-1560. |