Patent Application
20100141451
n/a
n/a
The present invention relates generally to article interrogation systems and more specifically to a method and system for deactivating a tag in an Ultra High Frequency (“UHF”) interrogation system without the need to physically contact the tag with a deactivation device.
Mixing labels or mixing tags are used in Ultra High Frequency (“UHF”) electronic article surveillance (“EAS”) interrogation systems and are based on a frequency mixing principle. Typically, mixing tags include a diode attached to a dipole antenna. The tag is tuned at a specific microwave frequency (fuhf), such as for example 915 MHz. The frequency range can be chosen from hundreds of Megahertz up to several Gigahertz by adjusting the antenna's dipole length and the diode's junction capacitance. The lower the operating microwave frequency, the longer the dipole length is required, and the larger the capacitance.
However, there are inherent limitations with deactivation devices when having to deactivate tags having diodes. For example, U.S. Pat. Nos. 4,318,090 and 4,574,274 provide UHF mixing tags that use diode non-linear elements and means for direct contact or non-direct contact but with limited range. The breakdown characteristics of the diode requires that a substantial current be driven through diode in order to achieve deactivation, thus resulting in the direct contact with the tag in order to supply sufficient electrical energy to the diode to cause it to be destroyed, thus deactivating the tag. This results in an impractical deactivation system since it is not always possible or economically feasible to be limited to this type of “contact” deactivation. Thus, tag designs of this type are ineffective in situations where deactivation of the tag takes place from a distance, i.e., where the deactivation device is not in contact with the tag. Other prior art deactivation systems (such as the system disclosed in U.S. Pat. No. 5,608,379) have attempted to avoid this problem by adding switches and other hardware devices to the deactivation system. This proves to be costly and cumbersome and results in relatively low deactivation distances for a considerably large magnetic field source.
Neither of the aforementioned attempted solutions solves the problem of how to effectively deactivate EAS tags at a substantial distance without the need for the deactivation device to be in direct contact with the EAS tag and without the need to provide additional deactivation elements to the EAS tag. The inherent characteristics of diodes with their predictable non-linear behavior render EAS deactivation systems that utilize these types of EAS tags ineffective when it comes to deactivating tags from a distance.
Therefore, what is needed is a new EAS tag using a non-linear element that exhibits very low level breakdown characteristics so that reliable deactivation at a considerable distance is achieved.
The present invention advantageously provides a system, method and apparatus for facilitating the deactivation of tags in UHF interrogation systems by incorporating a non-linear MOS device, such as a MOS capacitor, in the tag. In one aspect of the invention, an electronic article surveillance (“EAS”) tag is provided, where the tag includes an antenna circuit, and a non-linear component electrically coupled to the antenna circuit. The non-linear component exhibits non-linear capacitance with respect to voltage below a breakdown voltage threshold and exhibits an irreversible linear capacitance with respect to voltage above the breakdown voltage threshold.
In another aspect, an electronic article surveillance (“EAS”) tag deactivation system is provided and includes an EAS tag, where the tag includes an antenna circuit, and a non-linear component electrically coupled to the antenna circuit. The non-linear component exhibits a non-linear capacitance with respect to voltage below a breakdown voltage threshold and exhibits an irreversible linear capacitance with respect to voltage above the breakdown voltage threshold. The system further includes a deactivation device adapted to deactivate the EAS tag without making contact with it.
In yet another aspect of the invention, a method of deactivating an electronic article surveillance (“EAS”) tag is provided. The method includes providing an EAS tag having an antenna circuit and a non-linear component electrically coupled to the antenna circuit, where the non-linear component exhibits a non-linear capacitance with respect to voltage below a breakdown voltage threshold and exhibits an irreversible linear capacitance with respect to voltage above the breakdown voltage threshold. The method further includes inducing a voltage across the non-linear component, where the induced voltage is greater than the breakdown threshold in order to break down the non-linear component.
Additional aspects of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The aspects of the invention will be realized and attained by means of the elements and combinations particularly pointed out in the appended claims. It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
A more complete understanding of the present invention, and the attendant advantages and features thereof, will be more readily understood by reference to the following detailed description when considered in conjunction with the accompanying drawings wherein:
Before describing in detail exemplary embodiments that are in accordance with the present invention, it is noted that the embodiments reside primarily in combinations of apparatus components and processing steps related to implementing a system, device and method for facilitating the deactivation of EAS tags in a proximity deactivation environment by including within the tag, a nonlinear MOS device that is suitable for breakdown with a low voltage. Accordingly, the system and method components have been represented where appropriate by conventional symbols in the drawings, showing only those specific details that are pertinent to understanding the embodiments of the present invention so as not to obscure the disclosure with details that will be readily apparent to those of ordinary skill in the art having the benefit of the description herein.
As used herein, relational terms, such as “first” and “second,” “top” and “bottom,” and the like, may be used solely to distinguish one entity or element from another entity or element without necessarily requiring or implying any physical or logical relationship or order between such entities or elements.
Referring now to the drawing figures in which like reference designators refer to like elements there is shown in
The antenna 18 is tuned approximately to the UHF electromagnetic signal (e.g., 915 MHz). The LF modulation frequency may be, for example, 111 KHz. The LF electric field modulates the non-linear capacitance of the MOS device 16 and creates a series of mixing signals centered about the UHF signal with frequency periodicity of f1±N*f2, where f1 is the UHF signal frequency, f2 is the LF modulation signal frequency, and N is the sideband number. The mixing signal level is a function of the UHF resonant field, the LF modulation field, the mixing tag antenna 18, and the non-linearity characteristics of the MOS device 16. The MOS device 16 characteristics that affect this mixing signal are discussed below. The detection system consists of UHF and modulation antennas along with electronics that provide the field sources and detection circuitry.
Thus, EAS tags having a non-linear diode element such as in the prior art are replaced by EAS tags of the present invention using MOS device 16.
With a p-type semiconductor, as the gate voltage increases from negative to positive voltage the holes are pushed away from insulator/semiconductor interface, leaving a bulk of immobile negative ions. This effectively increases the gap, and therefore the total net capacitance is reduced. The capacitance eventually reaches a minimum. Additionally increasing the voltage will not increase the size of the depletion region. A further increase in gate voltage will create an inversion, where a large population of electrons will be attracted to the interface, as a result, the effective capacitance will revert back to the Ci value. This however, will only take place at a low frequency (<100 Hz) region. In a typical high frequency condition, the net capacitance will be measured to be Cmin, as indicated in
The CV characteristic of MOS device 16 depends on the doping concentration of the semiconductor, thickness of the insulator 26, and the types of materials used for electrodes 20 and 22. The design of the present invention can be altered such that the degree of non-linearity can exceed that of a diode (as used in the prior art) thus further enhancing the UHF EAS system performance. Further, MOS device 16 can be deactivated at distances from the deactivator beyond those EAS devices that use diodes. This arrangement is advantageous when using disposable EAS tags 14. Contrary to a diode, the MOS device 16 can be destroyed by applying a high enough voltage (VG) across the electrodes. The capacitance vs. voltage is non-linear below the threshold voltage, but beyond the threshold breakdown voltage the device irreversibly operates as a linear capacitor, thus permanently eliminating any mixing signal. As a result, the EAS function can be effectively eliminated and/or altered resulting in the ceased production of the mixing signal. i.e., deactivation occurs. With the relatively low breakdown voltage of MOS device 16 it is possible to create a deactivation distance without adding additional features to the non-linear element (i.e., MOS device 16) of EAS mixing tag 14.
To facilitate the ease of deactivation, the breakdown voltage of MOS device 16 of EAS tag 14 can be further minimized. This can be achieved by, for example, reducing the thickness of insulation/dielectric layer 26. With a thinner layer, a high E-field can be generated to induce breakdown. Alternately, it is possible to choose different kinds of insulators having lower breakdown voltages. In yet another embodiment, impurity or defect centers may be included during the deposition of the dielectric layers to encourage the breakdown.
Thus, MOS device 16 has a built-in breakdown voltage characteristic that determines the deactivation characteristics in mixing tag 14. A deactivator device provides an E-field source within regulatory limits at a determined operating frequency. The E-field couples to the mixing tag 14 to provide the necessary breakdown of the thin oxide layer of the MOS device 16. Below this breakdown threshold, MOS device 16 operates as a non-linear capacitor. However, after breakdown is achieved, MOS device 16 operates irreversibly as a linear capacitor with a somewhat lower capacitance value. Absence of the non-linearity characteristic renders mixing tag 14 undetectable in an EAS mixing system.
Thus, antenna 18 is electrically connected to points A and B, and MOS device 16 can include the circuit depicted in
The present invention advantageously provides and defines a device, system and method used to facilitate the deactivation of EAS tags in a proximity deactivation environment by including within the tag, a nonlinear MOS device that is suitable for breakdown with a low voltage.
In addition, unless mention was made above to the contrary, it should be noted that all of the accompanying drawings are not to scale. Significantly, this invention can be embodied in other specific forms without departing from the spirit or essential attributes thereof, and accordingly, reference should be had to the following claims, rather than to the foregoing specification, as indicating the scope of the invention.
