Claims
- 1. An improved semi-conductor which comprises a film of fissionable, semi-conductive metal phthalocyanine, said film being substantially free of phosphorus nitride and derivatives of the same and being supported on the external surface of a solid, rigid substrate, said substrate being substantially free of water.
- 2. The semi-conductor of claim 1 in which said film of fissionable, semi-conductive metal phthalocyanine comprises uranium phthalocyanine.
- 3. The semi-conductor of claim 1 in which said substrate comprises a material that is an electrical conductor.
- 4. The semi-conductor of claim 3 in which said electrical conductor is selected from the group consisting of aluminum, zirconium and alloys thereof.
- 5. The semi-conductor of claim 1 in which said substrate is an electrical insulator.
- 6. The semi-conductor of claim 5 in which said electrical insulator is selected from the group consisting of aluminum oxide, zirconium oxide, beryllium oxide and mixtures thereof.
- 7. The semi-conductor of claim 2 in which said uranium phthalocyanine is comprised of uranium (IV) bis-phthalocyanine.
- 8. The semi-conductor of claim 2 in which said uranium phthalocyanine is comprised of uranyl phthalocyanine.
- 9. The semi-conductor of claim 1 in which said film of fissionable, semi-conductive metal phthalocyanine comprises thorium phthalocyanine.
- 10. The semi-conductor of claim 9 in which said thorium phthalocyanine is comprised of thorium (IV) bis-phthalocyanine.
- 11. The semi-conductor of claim 9 in which said thorium phthalocyanine is comprised of thoranyl phthalocyanine.
- 12. The semi-conductor of claim 1 in which said film of fissionable, semi-conductive metal phthalocyanine comprises plutonium phthalocyanine.
- 13. The semi-conductor of claim 12 in which said plutonium phthalocyanine is comprised of plutonium (IV) bis-phthalocyanine.
- 14. The semi-conductor of claim 12 in which said plutonium phthalocyanine is comprised of plutonyl phthalocyanine.
- 15. The semi-conductor of claim 1 in which said film of fissionable semi-conductive metal phthalocyanine has the alpha crystalline modification.
- 16. The semi-conductor of claim 1 in which said film of fissionable semi-conductive metal phthalocyanine has the beta crystalline modification.
- 17. The semi-conductor of claim 1 in which said film of fissionable semi-conductive metal phthalocyanine has the gamma crystalline modification.
- 18. The semi-conductor of claim 1 in which said film of fissionable semi-conductor metal phthalocyanine has a crystal axis orientation such that the plane of the phthalocyanine molecule is oriented substantially normal to the surface of the substrate.
- 19. The semi-conductor of claim 1 in which said film of fissionable semi-conductive metal phthalocyanine has a crystal axis orientation such that the plane of the phthalocyanine molecule is tilted at an acute angle with respect to the surface of the substrate.
- 20. The semi-conductor of claim 1 in which said film of fissionable semi-conductive metal phthalocyanine has a crystal axis orientation such that the plane of the phthalocyanine molecule is oriented substantially normal to the surface of the substrate.
- 21. The semi-conductor of claim 1 in which said substrate is substantially free of any solvent.
- 22. The semi-conductor of claim 1 in which said film of fissionable, semi-conductive metal phthalocyanine is substantially continuous in form in each direction along the film.
- 23. The semi-conductor of claim 1 in which said film of fissionable, semi-conductive metal phthalocyanine is substantially free of voids of more than about 50 Angstroms in maximum transverse dimension.
- 24. The semi-conductor of claim 1 in which said film of fissionable, semi-conductive metal phthalocyanine is substantially free of voids of more than about 40 Angstroms in maximum transverse dimension.
- 25. The semi-conductor of claim 1 in which said film of fissionable, semi-conductive metal phthalocyanine is substantially free of voids of more than about 30 Angstroms in maximum transverse dimension.
- 26. The semi-conductor of claim 1 in which the substrate has a resistivity of more than about 10.sup.15 ohm-cms.
- 27. The semi-conductor of claim 1 in which the substrate has a resistivity of more than about 10.sup.18 ohm-cms.
- 28. The semi-conductor of claim 1 in which the substrate has a resistivity no greater than about 10.sup.-4 ohm-cms.
- 29. The semi-conductor of claim 1 in which the substrate has a resistivity no greater than about 10.sup.-5 ohm-cms.
- 30. The semi-conductor of claim 1 in which the substrate has a resistivity no greater than about 10.sup.-6 ohm-cms.
Parent Case Info
This application is a continuation-in-part of my copending application entitled "Method and Apparatus for Producing Electrical Power" filed May 3l, 1977 and assigned Ser. No. 801,636, which was a continuation-in-part of a similarly entitled application filed Dec. 23, 1974 and assigned Ser. No. 535,218, which was in turn a continuation-in-part of a similarly entitled application filed July 28, 1971 and assigned Ser. No. 166,687, the latter two applications being both now abandoned.
US Referenced Citations (8)
Non-Patent Literature Citations (2)
Entry |
Brophy et al, Organic Semiconductors, MacMillan & Co., N.Y., N.Y., 1962, pp. IX-XI. |
Krunick Elec. Conduction in Uranyl Phthalocyanine, Nuc. Sci. Abst., vol. 20, #19, p. 4352, #35917 (1966). |
Continuation in Parts (3)
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Number |
Date |
Country |
Parent |
801636 |
May 1977 |
|
Parent |
535218 |
Dec 1974 |
|
Parent |
166687 |
Jul 1971 |
|