Claims
- 1. A metallizing process for metallizing a semiconductor device comprising the steps of:a) providing a semiconductor substrate; b) forming a conductive layer on said semiconductor substrate; c) forming a dielectric layer on said conductive layer; d) forming a titanium nitride layer directly on said dielectric layer and without contacting said conductive layer; and e) patternizing said titanium nitride layer, said dielectric layer and said conductive layer, wherein said (dielectric layer is used for avoiding spontaneous electrochemical reaction between said titanium nitride layer and said conductive layer.
- 2. The metallizing process according to claim 1 wherein said step b) is executed by a reactive DC sputtering.
- 3. The metallizing process according to claim 1 wherein said conductive layer is a metal layer.
- 4. The metallizing process according to claim 3, wherein said metal layer is made of an AlCu alloy.
- 5. The metallizing process according to claim 1 wherein said conductive layer has a thickness ranged from 5,000 Ř10,000 Å.
- 6. The metallizing process according to claim 1 wherein said step c) is executed by oxidation.
- 7. The metallizing process according to claim 6 wherein said dielectric layer is an oxide layer.
- 8. The metallizing process according to claim 7 wherein said oxide layer is an aluminum oxide (Al2O3) layer.
- 9. The metallizing process according to claim 8 wherein said aluminum oxide layer has a thickness ranged from 10 Å to 20 Å.
- 10. The metallizing process according to claim 7 wherein said oxide layer is a silicon dioxide (SiO2) layer.
- 11. The metallizing process according to claim 10 wherein said silicon dioxide layer has a thickness ranged from 10 Å to 50 Å.
- 12. The metallizing process according to claim 1 wherein said step c) is executed by nitridation.
- 13. The metallizing process according to claim 1 wherein said dielectric layer is a nitride layer.
- 14. The metallizing process according to claim 13 wherein said nitride layer is an aluminum nitride (AlN) layer.
- 15. The metallizing process according to claim 14 wherein said aluminum nitride layer has a thickness ranged from 10 Å to 50 Å.
- 16. The metallizing process according to claim 1 wherein said step d) is executed by a reactive DC sputtering.
- 17. The metallizing process according to claim 1 wherein said titanium nitride layer having a thickness ranged from 200 Ř1,500 Å.
- 18. The metallizing process according to claim 1 wherein said step e) further includes the following sub-steps of:e1) executing a photolithography process according to a specific runner pattern to cover a photoresist layer on said titanium nitride layer; e2) executing a first etching process to etch away portions of said titanium nitride layer, said dielectric layer and said conductive layer not covered by said photoresist layer; and e3) executing a second etching process to etch away said photoresist layer, said titanium nitride layer and said dielectric layer.
Parent Case Info
The present invention is a continuation-in-part application of the parent application bearing Ser. No. 09/129,059 and filed on Aug. 4, 1998.
US Referenced Citations (8)
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
09/129059 |
Aug 1998 |
US |
Child |
09/725602 |
|
US |