Embodiments of the invention relate to electronic circuitry commonly employed to provide regulated voltages to high frequency, high-power VLSI devices. Such circuitry falls under the broad category of power management electronics.
The continuing scaling of transistor dimensions, the associated increase in the number of integrated transistors and the continuing demand for ever greater performance places an increasing burden upon the electronic circuitry that delivers the power demanded by components such as microprocessors. As seen in the ‘power delivery’ section of reference [3], the scaling requirements imposed upon interconnect components that marry high-power/performance IC's to support electronic devices are integer exponents of the typical semiconductor fabrication process scaling factor. It has been shown, considering typical microprocessors in desktop computers, that the scaling for the loop inductance between the capacitance that is electrically and physically closest to the microprocessor die and the circuits on the die will need to be at least the 3rd exponent of the process scaling factor in a scaling arrangement where the power consumed in the scaled component remains the same as the power consumed by the prior generation component. The resistances of the intervening interconnect between the power conversion components (typically referred to as Voltage Regulation Modules or VRM's) and the processor die will need to scale inversely as the square of the increase in the supply current flowing in order to maintain the power wasted in the interconnect approximately the same. It may be foreseen by a person skilled in the art of electronic design that scaling the interconnect architecture along the requirements indicated will require new, innovative changes to the interconnect architecture.
Another problem specific to microprocessors most commonly used in desktop computers of the present is the immediate requirement for a high percentage of the peak operating current during the transition of the processor from an inactive operational state to a fully active one. When imposed upon the prior art power delivery network of passive components (banks of capacitors and the intervening interconnect, represented by their inductance), such sudden demand in current produces power supply ‘droops’ or sudden reductions in the available electromotive force within the processor (reference [3], Power Delivery section). Because of the slow speed of response of the VRM's and the intervening power distribution network's delays, these droops can last for substantial durations and often result in a failure of operation of the processor. No prior art solution that satisfactorily addresses this problem exists; the problem has been contained this far through the continuing scaling of the power delivery capacitors and inductances.
The need to minimize power consumption for high-performance components such as processors has perhaps never been felt as greatly as in the present time. Prior research has shown that reducing the operating voltage can bring about a cubic reduction in power consumption. Such power delivery architectures have been implemented in very low power processors employed in ‘Thin Clients’ and ‘Notebook’ computers in the art. A person skilled in the art may appreciate that the prior art power delivery system associated with microprocessors in common desktop computers is not suited to operating voltage shifts at the speeds at which a gigahertz processor may require them to be. A need therefore exists for an innovative power delivery system for high-power, high frequency components that addresses these problems described.
The invention specifies an innovative integration of devices and function that successfully addresses these problems in the state of the art.
The invention is a high-bandwidth voltage conversion system with integrated provisions for bypassing the voltage conversion circuits incorporated therein. High-frequency-capable power transistors and small-value inductors, fabricated as an interconnect layer immediately above the layer containing the transistor devices, facilitate a high frequency, high efficiency DC-to-DC conversion system. In addition, a path demonstrating very low impedance to charge flow with the required frequency performance is integrated within the same component. This path is activated during load events that demand a sudden, high charge flow requirement, bypassing the DC-to-DC conversion path that has a limited bandwidth. During such ‘transient’ events, therefore, the input filter to the DC-to-DC conversion system is effectively shorted to the output filter, sharing the charge in the high-voltage capacitors of the input filter with the low-voltage capacitors of the output filter, substantially augmenting the charge that the low-voltage capacitors provide to the load. The rate of flow of ‘bypass’ charge is limited primarily by the input filter characteristics.
The integration of the power transistors for the DC-to-DC conversion system with the necessary inductors and the bypass solution on the same integrated circuit substrate is key to the implementation of the solution. Additionally, it is also essential that the invention be placed at close proximity to the load device in order to maximize the benefit of the bypass function. For example, a placement on the very same package substrate that the load device is mounted upon, but on the opposite side of the substrate, such that the physical distance between the circuits on the load device and the invention is greatly minimized, will be a recommended best mode for the use of the invention. This proximity of the invention to the load device also enables speedy local communication between the load device and one or more of the invention devices and facilitates fast power supply voltage control of the distributed voltage regulation system by the load device.
Under normal conditions, the DC-to-DC converter converts the input HV into an output LV voltage that provides load current to the load device. The bypass path consisting, in the example illustrated in
When the load device initiates an event that will require a sudden, large inflow of charge, it communicates this information via a single, direct connection to each of the invention IC devices that are mounted in close proximity on the opposite side of the mounting substrate of the load device. This signal triggers circuits within the invention IC that pull the gate voltage of device Q2 up to the input high voltage ‘HV’ or above HV as may be desired through simple circuit elements such as PFET transistors connecting between the gate node of Q2 and the HV power bus and if necessary, an internally generated higher voltage within the invention IC. This action turns device Q2 fully on resulting in a large current flow, as permitted by the parasitic devices on the HV filter capacitors, into the output LV power line. This current flows into the load augmenting the charge flowing from the filter capacitors on the LV power bus into the load.
The invention IC device monitors the value of the HV power line in order to ensure that it does not fall below a value that jeopardizes the effectivity of the integrated DC-to-DC converter in delivering the output LV voltage. Additionally, by monitoring the output LV voltage, it shuts the bypass pathway when the LV voltage approaches the reference value programmed into the invention IC devices or over-ridden locally by a reference signal provided by the load device.
It is important to recognize that a high rate of repetitive activation of the bypass path in the invention IC devices may result in depletion of charge available in the filter capacitors on the HV power bus line. A recommended best-mode implementation of the invention system is therefore one wherein the invention devices function as a local array of high-bandwidth distributed regulators augmenting an existing, low-bandwidth input voltage power bus. In other words, it is recommended that the Output LV line connection between the invention IC's and the load device be also connected to an external LV power supply coming into the system formed by the load device, the mounting substrate and the invention IC devices and associated filter capacitors. In such a configuration, overshoots of the LV voltage are possible when the charge demand from the load is suddenly reduced. In that event, the invention IC may employ the integrated internal charge pumps to derive energy from the overshoots to feed into the HV filter capacitors. This may be accomplished simply by redirecting the output of the internal charge pumps to the input HV power bus as long as the overshoot exists on the output LV power bus.
Thermal design and packaging: One skilled in the art will appreciate that any voltage conversion system is associated with inherent inefficiency that leads to energy lost as heat. The invention IC devices, while providing higher efficiencies at high frequencies may therefore require heat extraction in order to maintain the junction temperatures at safe levels. This may be accomplished as an additional benefit of the close-proximity mounting of the invention IC devices and the load device. By minimizing the physical distance between the invention IC devices and the load device and maximizing the metallic (preferably, copper) interconnect between them, the thermal resistance between the two may be greatly minimized allowing for heat extraction through the prior art methods employed for cooling the load device. An example of such a system configuration could be an enhancement of the invention disclosed in reference 4, that claims the use of a flex tape as a flexible, high-density signal interconnect component. An enhanced invention embodiment could employ thin and thick flex tapes between the load device and the invention IC devices, with the thin flex tape providing pathways for signals and the thicker flex tape providing a measure of mechanical robustness, pathways for power interconnect and a relatively thinner common substrate with substantial copper metallization pathways for lower thermal resistance. The thicker flex tape of this embodiment will mount the invention IC devices as well as the input and output filter capacitors, and provide prior art interconnect techniques mating with an appropriate ‘socket’ component that mechanically holds this assembly.
Alternate embodiments:
Under normal operating conditions, in the absence of any sudden, large current demand (transient demand), this embodiment functions as a high-frequency, high-bandwidth DC-to-DC conversion system that augments the power bus line connecting to the load device. When a transient load requirement is detected through a signal from the load device, this embodiment transitions into a bypass operational mode. In this mode, both current flow pathways are activated simultaneously. Because the magnetic fields of the two inductors oppose and cancel each other, the inductors display highly reduced impedance to changing current flow and allow Q1 and Q2 to transfer charge from the input HV to the output LV power line at a rate limited primarily by the parasitic inductance of the input filter capacitors.
The effectivity of this embodiment depends upon maximizing the mutual inductance such that almost complete magnetic field cancellation is achieved in the simultaneous excitation of both inductors. The embodiment may provide full, continuous utilization of the transistor area in the invention IC, and may be a better option if the inductors can be fabricated satisfying the magnetic field cancellation requirement. While various techniques exist in the prior art for integrating low-resistance inductors onto monolithic integrated circuits, it is believed that open, vertical ring-like, or coil-like structures sharing magnetic core material and fabricated with a common core path upon the monolithic IC substrate would be best suited to the embodiment's bypass function.
Bypass function assisted by magnetic saturation: Alternately, an embodiment of the invention may be designed and fabricated such that the material that forms the magnetic core for the integrated inductors saturates beyond a maximum current through the inductors. Either of the two previously described invention embodiments may employ this enhancement, or the invention may simply contain the DC-to-DC conversion path that may beneficially also be used as the bypass path through magnetic saturation that minimizes the inductive impedance to changes in current.
In an embodiment employing magnetic saturation for the bypass function, the inductors and their core magnetic material may be designed and fabricated such that the inductors operate at the magnetic saturation limit during normal voltage conversion. The circuits and operating conditions may also be designed to ensure that sufficient timing margin is available, at the lower limit of the operating input HV voltage, to extend the duration that the switch device Q1 turns on in order to bring about magnetic saturation in the inductor core material.
The invention embodiment functions as a high-bandwidth voltage conversion device under normal load conditions. The voltage conversion mode is suspended and the bypass mode is entered into when a transient requirement is indicated. In this mode, device Q1 (or Q1 and Q2) remain continuously on as long as the invention IC detects voltage sufficiency in the input HV power line and insufficiency in the output LV line. As the inductor current ramps up, it reaches the point of magnetic saturation, beyond which it's inductive impedance reduces significantly, (
This embodiment may eliminate an alternate bypass path altogether and incorporate the bypass function as an operational mode of the voltage conversion path itself. This is therefore most efficient in the utilization of the invention IC's integrated components, but is slower in transient suppression, and requires careful design of the magnetic behavior of the inductor core material as well as it's stability over the temperatures of operation of the invention device.
Although specific embodiments have been illustrated and described herein, any circuit arrangement configured to achieve the same purposes and advantages may be substituted in place of the specific embodiments disclosed. This disclosure by the inventor is intended to cover any and all adaptations or variations of the embodiments of the invention provided herein. All the descriptions provided in the specification have been made in an illustrative sense and should in no manner be interpreted in any restrictive sense. The scope, of various embodiments of the invention whether described or not, includes any other applications in which the structures, concepts and methods of the invention may be applied. The scope of the various embodiments of the invention should therefore be determined with reference to the appended claims, along with the full range of equivalents to which such claims are entitled. Similarly, the Abstract of this disclosure, provided in compliance with 37 CFR §1.72(b), is submitted with the understanding that it will not be interpreted to be limiting the scope or meaning of the claims made herein. While various concepts and methods of the invention are grouped together into a single ‘best-mode’ implementation in the detailed description, it should be appreciated that inventive subject matter lies in less than all features of any disclosed embodiment, and as the claims incorporated herein indicate, each claim is to viewed as standing on it's own as a preferred embodiment of the invention.