Claims
- 1. A method of making an integrated field effect transistor (FET) and photodetector optical receiver, comprising:providing a semiconductor substrate; forming a FET, including: forming at least one p channel in a p-well of the substrate; forming at least one n channel in the p-well of the substrate; forming a p-i-n photodetector in the substrate, including: forming at least one p channel in an absorption region of the substrate when forming the at least one p channel in the p-well of the FET; forming at least one n channel in the absorption region of the substrate when forming the at least one n channel in the p-well of the FET.
- 2. The method of claim 1, wherein the substrate comprises GaAs.
- 3. The method of claim 1, wherein the FET comprises a metal semiconductor field effect transistor (MESFET).
- 4. The method of claim 1, wherein the p-i-n photodetector and FET are formed as lateral structures.
- 5. The method of claim 1, wherein forming the n channel in the p-well and the absorption region further comprises:implanting an n− type dopant in the p-well and absorption region after forming the p channel in the p-well and absorption region; and implanting an n+ type source and drain region in the p-well and the absorption region after implanting the n− type dopant.
- 6. The method of claim 5, further comprising:implanting an n− type lightly doped drain into the n channel of the p-well and the absorption region after implanting the n− type dopant and before implanting the n+ type source and drain region.
- 7. The method of claim 5, wherein forming the n channel in the p-well and the absorption region further comprises:implanting an n− type dopant in the p-well and the absorption region to form initial n channels therein after forming p channels in the p-well and absorption region; depositing metal gates above the p-well after implanting the n− type dopant, wherein the gate metal divides the n channel in the p-well into two n channels; and implanting a heavy n+ source and drain region into the two n channels in the p-well and the absorption region after implanting the n type dopant.
- 8. The method of claim 1, wherein multiple interconnected p channels and n channels are formed in the absorption region, further comprising:depositing a metal in a portion of the interconnected p channels and the n channels in the absorption region.
Parent Case Info
This application is a divisional of U.S. patent application Ser. No. 09/573,748 filed May 18, 2000 now U.S. Pat. No. 6,429,499, which is incorporated herein by reference in its entirety.
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