This relates generally to methods and apparatus for disabling solid state laser diodes or the like.
Optical diode lasers use optical pumping to emit photons. Materials with a direct band gap typically result in favorable optoelectronic properties over indirect band gap materials. By alloying certain semiconductor materials such as aluminum (Al), gallium (Ga), arsenic (As), indium (In), and phosphorus (P), among others, it is possible to vary the wavelength of the emitted light within limits defined by the ratio of direct to indirect band gap materials. See, K. Hajiaghajani “Design of an Optimum Driver Circuit for CW Laser Diodes,” MSEE Thesis, Univ. of Arizona (1992) (UMI Ann Arbor, Mich., Order No. 1351355), incorporated herein by reference.
Diode lasers may be implemented in assemblies of one or more lasers. Light emitting lasers emit light at a high intensity and a narrow wavelength. There is a risk that a laser diode may be removed from a projection system and misused once it is removed. If it is misused, it may cause injury or damage when powered.
One approach, described in US 2012/0280578 A1, creates a laser interlock by attaching hardware with intelligent logic. Such approach shuts the laser system off in the event of programmed interlock signals.
Another approach, described in U.S. Pat. No. 4,242,657 A and U.S. Pat. No. 2,573,920 A, makes use of electrical connectors to shut off or turn on energy to a magnet which completes a circuit. The laser is rendered non-operational without power to the circuit but otherwise remains functional.
Yet other approaches incorporate automatic shut-off systems which monitor the laser enclosure and temporarily shut off the laser if a part of the enclosure is opened or the laser beam is interrupted.
Such interlocks are designed to prevent accidental exposure to laser hazards. In these interlocks, the laser is temporarily turned off or the system shut down if either the interlock is tripped or the laser beam is interrupted. The laser device itself, however, remains undamaged and otherwise fully functional. Thus, power can be restored and system interlocks can be reset to turn the laser back on. So, these types of interlocks do not address the issue of laser misuse once the laser is removed from its protective housing and repowered for reuse elsewhere.
Methods and apparatus are provided for disabling a laser diode.
In an implementation, a laser illumination module including a laser diode is configured with an interlock that automatically applies a reverse current to the laser sufficient to disable its normal functioning upon unauthorized removal of the module from the system in which it is deployed.
A described module, employing a laser diode, laser drive circuitry for powering the laser diode and a Zener diode for laser diode current control, is provided with a rechargeable battery that charges during normal laser operation and an interlock switch that applies reverse current to the laser diode when the interlock switch is tripped. The reverse current damages the laser diode leaving it unable to further function at its usual high intensity (e.g., turns it into a low power dark emitting laser diode (DELD), turns it into a very expensive LED, or renders it completely inoperable).
Example embodiments are described with reference to accompanying drawings, wherein:
Laser diodes are sensitive to overvoltage and overcurrent conditions. Such conditions may cause the optical energy density to exceed the diode's integral mirror reflective capacity whereby the mirrored surface can lose its reflectivity and interfere with proper functioning. Such conditions may also cause failure of the laser diode's PN junction. A severe overcurrent or overvoltage surge can cause localized heating and other harmful phenomena which, under extreme conditions, can fracture the laser diode die. See, US 2011/0110005 A1, the entirety of which is incorporated herein by reference.
It is not unusual for laser illumination modules to include multiple low power lasers in series. Low power laser diodes whose optical output power is below around 200 mW are particularly sensitive to overvoltage/overcurrent surges. Such diodes are typically designed as inherently fast devices suitable for direct modulation at data rates in the gigahertz range. Thus, the PN junction and optical elements of the laser diode can react very quickly to changes in voltages or current, and need to be proactively protected to prevent the occurrence of overvoltage or overcurrent conditions. See, US 2011/0110005 A1.
As discussed for an example current vs. voltage profile of a laser diode shown in US 2011/0110005 A1, the voltage vs. current profile of the laser diode is similar to that of other types of diodes. For the example laser diode discussed in US 2011/0110005 A1, starting from zero volts and applying incremental positive increases in voltage (i.e., those voltages that would tend to forward bias the laser diode), very little current flows until around 1.8 volts is reached. Thereafter, applying further incremental positive increases from around 1.8 volts up causes current flow to increase at a roughly exponential rate until the current exceeds a lasing threshold, which, for the example laser diode referenced there, occurs at around 2.2 volts and at around 30 milliamps. With further incremental positive increases in voltage, current flow continues to increase, while the optical power emitted by the laser diode increases at a rate that is roughly proportional to current. Once the maximum design current for a particular laser diode is reached (which is around 35 milliamps and 2.4 volts for the given example laser diode), further increases in current will likely result in failure, caused by one or both of the damage mechanisms described above.
Thus, as discussed in US 2011/0110005 A1, it can be important to completely prevent voltage, and thus current, from increasing beyond the absolute maximum rating for the particular laser diode. And, in many cases (most cases for low power laser diodes), the laser diode will be destroyed if the absolute maximum ratings are exceeded, even for a brief period of time. So, in order to protect the laser diodes from being damaged, positive protection is provided to limit both positive and negative voltages and/or currents across the diode. Examples of such protection are discussed, for example, in U.S. Pat. No. 5,550,852 A; U.S. Pat. No. 6,028,878 B; U.S. Pat. No. 8,264,806 B2; and US 2011/0110005 A1, the entireties of all of which are incorporated herein by reference. The recommendation given in US 2001/0110005 A1 is to limit positive voltages to around 2.4 volts and negative voltages to around 2.0 volts or less.
The need for such protection is especially true for laser diodes designed to be inherently fast devices. Accordingly, commercial diode laser illumination modules will typically include a reverse connected Zener diode, photodiode or similar protective device (hereafter “Zener diode”) in parallel with each laser diode. A simplified schematic view of a circuit arrangement 200 having a laser diode 202 in parallel with a reverse connected Zener diode 204 is shown in
While the reverse connected Zener diode 204 may be adequate to protect the laser diode as connected in normal laser diode operation, it will not protect the laser diode the same way if the normally applied polarity direction (“+” to “−” or “−” to “+,” depending on laser design) is reversed and the polarity is connected in a reversed, opposite polarity (viz., reversal of bias “−” to “+” or “+” to “−”) direction.
The Zener diode 204 limits voltage v and current j through the normally connected laser diode 202. If laser diode 202 is designed for normal forward bias operation (laser diode 202 connected “+” to anode, “−” to cathode with Zener diode reverse connected “−” to anode, “+” to cathode) and applied current j or voltage v is limited between Vd in forward bias and Vbr in reverse bias, current j through Zener diode 204 is limited to approximately zero in forward bias and a low leakage level in reverse bias. If applied current j or voltage v is outside of the range of Vd in forward bias and Vbr in reverse bias, the diode 204 breaks down and current flow is unrestricted. If current j limit through Zener diode 204 is exceeded, voltage v is also exceeded past breakdown. Either voltage or current excess can cause the Zener diode 204 to break down. Once Zener diode 204 breaks down, the circuit 200 will no longer protect laser diode 202 against a current or voltage greater than its maximum limit. When this occurs, too high a voltage or current pulse will permanently destroy the normal operation of laser diode 202, rendering it totally inoperable or at least capable of operation at only reduced power levels.
Table 1 lists maximum current I(max) and maximum voltage V(max) values for several commercially available laser diode devices having Zener diodes or similar protective devices coupled to the laser diode element. The first listed device indicates an allowable upper current limit of 85 mA. If the reverse current I(max) is exceeded beyond 85 mA (plus any provided safety margin), the Zener diode will exceed its breakdown voltage and lose its protective function. The second and third listed laser diodes indicate reverse voltage limits of 2V. After breakdown, the laser diode will be left unprotected and vulnerable to destruction, especially to suddenly applied current/voltage impulses or spikes.
An example embodiment laser illumination module 400 is shown in
The illustrated module 400 has a circuit 401 enclosed within a housing 402. Circuit 402 includes a laser driver 404 connected for driving a laser diode 406 under power supplied by system 100 through a flex cable 104 connected to a cable connector 403 when housing 402 is brought within cavity 102. A Zener diode, photodiode or similar protective element (collectively “Zener diode”) 408 is reverse coupled in parallel with laser diode 406 to provide overvoltage/overcurrent protection to laser diode 406 during normal operation. Circuit 401 further includes a rechargeable battery 410 and a charge circuit 412 connected for charging battery 410 also under power supplied by system 100 through flex cable 104.
Module 400 has an interlock 414 that includes switches 414, 415 and a switch controller 416. Switch controller 416 controls switches 414, 415 to connect the laser diode 406/reversed Zener diode 408 coupling to laser driver 404 in a normal operating polarity direction for normal operation as shown in
It will be appreciated that switch controller 416 may take many forms and that control of switching between normal operation and interlock triggered operation modes may be effected through mechanical operation, electrical operation, a combination of both mechanical and electrical operations, or some other means. The arrangement shown in
During the normal mode of operation, with module 400 inserted in projector cavity 102 so switches 414, 415 are set as shown in
During the same normal mode of operation, with module 400 inserted in projector cavity 102 and switches 414, 415 set as shown in
Upon unauthorized removal of module 400 from the projector cavity 102, the mechanism and/or electrical circuit elements of interlock 414 function to control switches 414, 415 to reset them as shown in
A signal generator is set to output a current pulse (block 504). The current pulse is applied (block 508). Pulse characteristics are measured (block 510) to identify the current pulse needed to break down the laser diode. The laser diode functioning is checked (block 512) using a device such as a thermopile. If the measurement shows that the laser diode is undamaged (“No” path from block 514), then current is increased (block 516) and the sequence is repeated (blocks 504-514). If the measurement shows that the laser diode is damaged (“Yes” path from block 514), then the high power lasing ability has been disabled and the diode now either doesn't function at all or functions only at reduced capability, e.g., as a light emitting diode (LED) (block 516). The test sequence is then terminated (block 518).
The sequence 600 begins with setting the interlock (block 602). The stored battery power is checked (block 606). If stored power is inadequate to disable laser functioning in interlock triggering mode (“No” path from block 608), the battery is charged (block 610). If the stored power is adequate (“Yes” path from block 608), the interlock is checked (block 612) to evaluate whether it has been triggered. If the interlock has not yet been triggered (“No” path from block 612), the sequence repeats (blocks 606-612). If the interlock has been triggered (“Yes” path from block 612), a polarity reversal current pulse is applied to the laser diode/reversed Zener diode coupling (block 618). This causes the Zener diode to exceed its breakdown current/voltage limit and lose its ability to protect the laser diode. This enables current/voltage higher than maximum allowable limits to be applied to the laser diode, and the lasing function is permanently damaged (block 620).
During testing of the described approach, a signal generator was used as a power source, where the current is controlled and applied in a single pulse of about 100 ms. An oscilloscope monitors both power supply current and voltage.
Example testing with various diode lasers showed permanent laser diode damage thresholds in a range of −750 mA to −900 mA at a 100 ms current pulse. As the magnitude of the reverse current pulse is increased, permanent diode laser damage occurs more closely to the beginning of the current pulse. A current pulse was able to damage the laser diode even when ramping a direct current (DC) reverse current did not damage the Zener diode. After damage to the diode laser diode, the laser was unable to lase yet still emitted a lower power light at about 20 mW at 1.2 A.
As discussed previously, a commercial laser diode product may typically include a reverse connected Zener diode coupled for protection of the laser diode (or multiple reverse connected Zener diodes, photodiodes or similar protective devices respectively coupled to ones of multiple laser diodes.) The Zener diode is effective as protection for a small current pulse and voltage. Beyond this range, the Zener diode can break down, allowing a much larger voltage or current pulse through the diode laser. This larger voltage or current pulse can permanently break down the diode laser.
This characteristic of diode laser modules is used to construct an interlock switch which, when triggered through unauthorized tampering with the module, will damage the laser diode to disable the lasing function. Bypass mechanisms/circuitry may, of course, be added by any number of means in order to enable authorized servicing of the modules and systems without triggering the destruction mode and/or without damaging the lasing function.
Those skilled in the art to which the invention relates will appreciate that modifications may be made to the described embodiments, and also that many other embodiments are possible, within the scope of the claimed invention.
This application claims the benefit of Provisional Application No. 61/939,454, filed Feb. 13, 2014, and the entirety of which is hereby incorporated by reference
Number | Date | Country | |
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61939454 | Feb 2014 | US |