Method and apparatus for forming a thin film on a tape substrate

Abstract

The invention continuously deposits materials used to grow a thin film onto a moving tape. The invention preferably uses a pay-out reel and take-up reel to respectively dispense and spool the tape substrate at a constant rate. The invention preferably uses a series of stages to form the thin film on the tape, and includes at least one reactor or reaction chamber to deposit one or more materials onto the tape substrate that is used to form the superconductor layer, and one or more chambers to deposit buffer layers between the film and the metal tape substrate or between layers of film, as well as for the deposition of coating layers. The invention also preferably uses transition chambers between the stages to isolate each stage from the other stages.

Description

TECHNICAL FIELD

[0002] This invention relates in general to superconductors, and in specific to a method and apparatus for forming a thin film on tape substrate.

BACKGROUND OF THE INVENTION

[0003] Electrical resistance in metals arises because electrons that are propagating through the solid are scattered because of deviations from perfect translational symmetry. These deviations are produced either by impurities or the phonon lattice vibrations. The impurities form the temperature independent contribution to the resistance, and the vibrations form the temperature dependent contribution.

[0004] Electrical resistance, in some applications, is very undesirable. For example, in electrical power transmission, electrical resistance causes power dissipation, i.e. loss. The power dissipation grows in proportion to the current, namely P═I2R in normal wires. Thus, wires carrying large currents dissipate large amounts of energy. Moreover, the longer the wire used in either larger transformers, bigger motors or larger transmission distances, the more dissipation, since the resistance in a wire is proportional to its length. Thus, as wire lengths increase more energy is lost in the wires, even with a relatively small currents. Consequently, electric power plants produce more energy than that which is used by consumers, since a portion of the energy is lost due to wire resistance.

[0005] In a superconductor that is cooled below its transition temperature TC, there is no resistance because the scattering mechanisms are unable to impede the motion of the current carriers. The current is carried, in most known classes of superconductor materials, by pairs of electrons known as Cooper pairs. The mechanism by which two negatively charged electrons are bound together is described by the BCS (Bardeen Cooper Schrieffer) theory. In the superconducting state, i.e. below TC, the binding energy of a pair of electrons causes the opening of a gap in the energy spectrum at Ef, which is the Fermi energy or the highest occupied level in a solid. This separates the pair states from the “normal” single electron states. The size of a Cooper pair is given by the coherence length which is typically 1000 Å, although it can be as small as 30 Å in the copper oxides. The space occupied by one pair contains many other pairs, which forms a complex interdependence of the occupancy of the pair states. Thus, there is insufficient thermal energy to scatter the pairs, as reversing the direction of travel of one electron in the pair requires the destruction of the pair and many other pairs due to the complex interdependence. Consequently, the pairs carry current unimpeded. For further information on superconductor theory please see “Introduction to Superconductivity,” by M. Tinkham, McGraw-Hill, New York, 1975.)

[0006] Many different materials can become superconductors when their temperature is cooled below TC. For example, some classical type I superconductors (along with their respective TC's in degrees Kelvin (K)) are carbon 15K, lead 7.2K, lanthanum 4.9K, tantalum 4.47K, and mercury 4.47K. Some type II superconductors, which are part of the new class of high temperature superconductors (along with their respective TC's in degrees K), are Hg0.8Tl0.2Ba2Ca2Cu3O8.33 138K, Bi2Sr2Ca2Cu3O10 118K, and YBa2Cu3O7−x 93K. The last superconductor is also well known as YBCO superconductor, for its components, namely Yttrium, Barium, Copper, and Oxygen, and is regarded as the highest performance and highest stability high temperature superconductor, especially for electric power applications. YBCO has a Perovskite structure. This structure has a complex layering of the atoms in the metal oxide structure. FIG. 1 depicts the structure for YBa2Cu3O7, that include Yttrium atoms 101, Barium atoms 102, Copper atoms 103, and Oxygen atoms 104. For further information on oxide superconductors please see “Oxide Superconductors”, Robert J. Cava, J. Am. Ceram. Soc., volume 83, number 1, pages 5-28, 2000.

[0007] A problem with YBCO superconductors specifically, and the oxide superconductors in general, is that they are hard to manufacture because of their oxide properties, and are challenging to produce in superconducting form because of their complex atomic structures. The smallest defect in the structure, e.g. a disordering of atomic structure or a change in chemical composition, can ruin or significantly degrade their superconducting properties. Defects may arise from many sources, e.g. impurities, wrong material concentration, wrong material phase, wrong temperature, poor atomic structure, improper delivery of materials to the substrate, among others.

[0008] Thin film YBCO superconductors can be fabricated in many ways including pulsed laser deposition, sputtering, metal organic deposition, physical vapor deposition, and chemical vapor deposition. Two typical ways for the deposition of thin film YBCO superconductors are described here as example. In the first way, the YBCO is formed on a wafer substrate in a reaction chamber 200, as shown in FIG. 2 by metal organic chemical vapor deposition (MOCVD). This manner of fabrication is similar to that of semiconductor devices. The wafer substrate is placed on holder 201. The substrate is heated by heater 202. The wafer substrate is also rotated which allows for more uniform deposition on the substrate wafer, as well as more even heating of the substrate. Material, in the form of a gas, is delivered to the substrate by shower head 203, via inlet 204. The shower head 203 provides a laminar flow of the material onto the substrate wafer. The material collects on the heated wafer to grow the superconductor. Excess material is removed from the chamber 200 via exhaust port 208, which is coupled to a pump. To prevent undesired deposition of material onto the walls of the chamber 200, coolant flows through jackets 205 in the walls. To prevent material build up inside the shower head 203, coolant flows through coils 206 in the shower head. The door 207 allows access to the inside of the chamber 200 for insertion and removal of the film/substrate sample. Processing of the film may be monitored through optical port 209.

[0009] In the second way, YBCO is formed by pulsed laser deposition on a substrate, including the possibility of using a continuous metal tape substrate 301. The tape substrate 301 is supported by two rollers 302, 303 inside of a reaction chamber 300. Roller 302 includes a heater 304, which heats the tape 301 up to a temperature that allows YBCO growth. The material 305 is vaporized in a plume from a YBCO target by irradiation of the target by typically an excimer laser 306. The vapor in the plume then forms the YBCO superconductor film on the substrate 301. The rollers 302, 303 allow for continuous motion of the tape past the laser target thus allowing for continuous coating of the YBCO material onto the tape. Note that the laser 306 is external to the chamber 300 and the beam from the laser 306 enters the chamber 300 via optical port 307. The resulting tape is then cut, and forms a tape or ribbon that has a layer of YBCO superconductive material.

[0010] Neither of the above described methods for forming thin film high temperature superconductors can produce a long length tape or ribbon of YBCO which can be used to replace copper (or other metal) wires in electric power applications. The first way only allows for the production of small pieces of superconductor material on the wafer, e.g. a batch process. The second way can only be used to make tape that is a few feet in length and uses multiple passes to generate a superconducting film of several microns thickness. The second way has a practical limitation of about 5 feet. Larger pieces of tape would require a larger heating chamber. A larger heating roller will also be needed. The tape will cool down after leaving roller 302, and thus will need more time to heat back up to the required temperature. Heating on one side of the chamber, with a cool down on the other side of the chamber may also induce thermal cracks into the YBCO layer and other layers formed on the metal substrate. The smaller pieces of tape produced by the second method may be spliced together to form a long length tape, but while the pieces may be superconducting, splice technology is not yet at the point of yielding high quality high temperature superconductor splices. Consequently, current arrangements for forming superconductors cannot form a long, continuous tape of superconductor material.

BRIEF SUMMARY OF THE INVENTION

[0011] The present invention is directed to a system and method where there is a need in the art for an arrangement that would allow for the formation of a thin film onto a metal ribbon or tape or wire, in a continuous manner, so as to form a continuous, long-length ribbon or tape or wire.

[0012] These and other objects, features, and technical advantages are achieved by a system and method which continuously deposits materials used to grow a thin film onto a moving tape. The invention preferably uses a pay-out reel to dispense the tape substrate at a constant rate. The invention then preferably uses an initialization stage to pre-heat and/or pre-treat the tape substrate before growing the thin film. Pre-heating is desirable to lessen thermal shock of the tape substrate. Pre-treating is desirable to reduce contaminants from the tape substrate before growing the thin film. The invention then preferably uses at least one reactor or reaction chamber to deposit one or more materials onto the tape substrate that is used to form the thin film. The invention preferably uses an anneal stage to finalize the thin film and cool down the tape. The invention preferably uses a take-up reel to spool the tape. The invention may optionally use a coating stage that deposits a protective coating onto the tape. The invention also may optionally use a quality control stage that ensures the proper characteristics of the tape. The invention may further optionally use a pre-cleaning stage that removes grease and/or other contaminants from the tape prior to entry into the initialization stage.

[0013] The invention preferably uses transition chambers between the initialization stage and the reaction chamber, between the reaction chamber and the anneal stage, and between reaction chambers if more than one chamber is used. Additional reaction chambers or reactors may be used to provide buffer layers between the substrate and the thin film, or coating layers on top of or in between layers of the film. The transition chambers isolate each stage or reactor from the other stages and/or reactors, and thereby prevent cross-contamination of materials from one stage or reactor to another stage or reactor. The transition chamber preferably includes a heating element that allows the temperature of the tape to be maintained and/or adjusted. The transition chamber preferably includes at least one port to allow the introduction of at least one gas to control the environment in the transition chambers for optimal maintenance of the superconductor or buffer layers. The transition chamber preferably includes at least one support that holds the tape during its transit through the transition chamber.

[0014] The reactor preferably includes at least one support that holds the tape during its transit through the reactor. The reactor also preferably includes a heating system that has a length in the direction of tape movement that is associated with the speed of the tape and the deposition of the material and/or growth rate of the superconductor layer. Thus, a portion of tape will be heated long enough so that a desired thickness of material (preferably, from 1 μm up to more than 10 μm) is achieved, as the portion of the tape is moved through the reaction region (thin film growth region) of the reactor. The reactor also preferably uses a shower-head to provide a laminar flow of material onto the tape. The reactor further preferably uses a cooling system to reduce the build up of material in undesired locations.

[0015] The foregoing has outlined rather broadly the features and technical advantages of the present invention in order that the detailed description of the invention that follows may be better understood. Additional features and advantages of the invention will be described hereinafter which form the subject of the claims of the invention. It should be appreciated by those skilled in the art that the conception and specific embodiment disclosed may be readily utilized as a basis for modifying or designing other structures for carrying out the same purposes of the present invention. It should also be realized by those skilled in the art that such equivalent constructions do not depart from the spirit and scope of the invention as set forth in the appended claims. The novel features which are believed to be characteristic of the invention, both as to its organization and method of operation, together with further objects and advantages will be better understood from the following description when considered in connection with the accompanying figures. It is to be expressly understood, however, that each of the figures is provided for the purpose of illustration and description only and is not intended as a definition of the limits of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS

[0016] For a more complete understanding of the present invention, reference is now made to the following descriptions taken in conjunction with the accompanying drawing, in which:

[0017] FIG. 1 depicts a known atomic structure for a YBCO superconductor;

[0018] FIG. 2 depicts a first prior art arrangement for producing a YBCO superconductor;

[0019] FIG. 3 depicts a second prior art arrangement for producing a YBCO superconductor;

[0020] FIG. 4 depicts an example of an embodiment of the invention;

[0021] FIG. 5 depicts an embodiment of an initialization stage of the invention;

[0022] FIGS. 6A-6E depict an embodiment of a reactor of a deposition stage of the invention;

[0023] FIGS. 7A and 7B depict an embodiment of an transition chamber of the invention; and

[0024] FIG. 8 depicts an embodiment of an anneal stage of the invention.

[0025] FIGS. 9A-9D depict different embodiments of the inventive superconductivity wire.

DETAILED DESCRIPTION OF THE INVENTION

[0026] FIG. 4 is a schematic diagram of an embodiment of a system 400 that uses the invention to produce a continuous tape of high temperature super-conducting (HTS) material. The system 400 includes several stages that operate together to deposit SC material onto a metallic substrate, such that the HTS material is atomically ordered with large, well-oriented grains and principally low angle grain boundaries. The atomic ordering allows for high current densities, e.g. JC greater than or equal to 100,000 amps per cm2.

[0027] The metallic substrate is preferably a metal foil tape 408 that is from {fraction (10/1000)} to {fraction (1/1000)} of an inch thick. The tape maybe as wide as desired. For example, the tape may be wide so that the resulting HTS tape can carry a large amount of current, or the tape may be wide so that the resulting HTS tape can be cut into narrower strips.

[0028] The tape 408 is preferably composed of nickel and/or a nickel alloy, and has a predetermined atomic ordering which will promote growth of the HTS material. The tape may also comprise nickel, silver, palladium, platinum, copper, aluminum, iron, tungsten, tantalum, vanadium, chromium, tin, zinc, molybdenum, and titanium. Such a tape has been described by Oak Ridge National Laboratories. The tape 408 supports the HTS layer, and thus should be ductile or flexible, as well as strong. Note that as described herein, only one side of the tape is being coated with a HTS layer, however, both sides may be coated with an HTS layer.

[0029] The tape 408 is preferably dispensed by pay-out reel 401. The pay-out reel 401 is a continuous feed reel which provides the tape at a constant speed. The pay-out reel (along with take-up reel 406) is preferably tension controlled to prevent sagging of the tape (too little tension) or stretching or breaking of the tape (too much tension). Either sagging or stretching the tape during processing (e.g. when the tape is heated to high temperature) can damage or destroy the HTS layer. Most preferably, a computer 409 controls the tension of tape, via tension controller 411, as the tape transits from the pay-out reel 401 to the take-up reel 406.

[0030] The speed of the tape depends upon a number of factors, e.g. size of the reaction chambers, desired thickness of the deposited materials, growth rate of the layers, temperature of the reaction, photo flux, etc. A preferred speed of about 3 cm per minute is suitable to continuously grow a YBCO HTS layer of about 0.5 to 5 micrometers in thickness. However, a speed of from 1 to 20 cm per minute may be used, depending on factors such as (but not limited to) desired thickness, growth rates, materials being used, material concentrations, etc. A speed controller 410 that comprises a stepper motor, which can be adjustable set, is preferably used to the speed of the tape. Most preferably, a computer 409 controls the speed of tape, via speed controller 410, as the tape transits from the pay-out reel 401 to the take-up reel 406. Note that pay-out reel may also comprise a speed controller that may also be connected to the computer 409.

[0031] The tape 408 should be clean and free of grease and/or other contaminants. Such contaminants can prevent deposition of materials, can chemically contaminate deposited materials, and can distort the resulting thin film structure, in most cases adversely affecting superconducting properties. A vapor degreaser or cleaner can be used in pre-clean stage 412 to clean the tape prior to its entry into the initialization stage 402. Alternatively, a mechanical cleaner, e.g. a roller wiper can be used to clean the tape. Another alternative is to use an ultrasonic bath, with a liquid cleaner, e.g. acetone, to clean the tape. Residual cleaning agents would be evaporated and/or burned off of the tape by initialization stage 402. Note that pre-clean stage 412 may comprise multiple applications of vapor, mechanical, or bath treatments, as well as combinations of vapor, mechanical, and/or bath treatments. Further note that this stage may be operated separately from system 400. The resulting cleaned tape could then be re-spooled and used in system 400 as tape 401.

[0032] Initialization stage 402 pre-heats and/or pre-treats the tape substrate 408 before growing the superconductor layer. This stage raises the temperature of the tape 408 to about 500° C. This temperature is between room temperature and the temperature of the next stage. This will reduce thermal shock of the tape substrate. Pre-treating will reduce contaminants from the tape substrate before growing surface layers including the top superconductor layer. This stage also removes the native oxide that covers metals. This stage has a reducing atmosphere that preferably comprises an oxygen scavenger, e.g. hydrogen (H2), ammonia (NH3), and/or carbon monoxide, and argon (and/or other non-reacting gas e.g. nitrogen). The scavenger reacts with the metal surface oxide to reduce it to bare metal. The surface metal oxide would disrupt the atomic order of the HTS layer, affecting its superconducting properties, and thus should be removed.

[0033] An example of an embodiment of the initialization stage 402 is shown in FIG. 5. This stage includes at least one support 501, preferably composed of quartz or a non-reactive material (e.g. stainless steel). Other materials could include gold, platinum, aluminum oxide, LaAlO3, SrTiO3, and/or other metal oxide materials. The support should be polished smooth, so as not to snag or kink the tape, which would damage the atomic ordering of the substrate, and result in reduced quality HTS film. Also, the support should only be as large as necessary to prevent sag, this will minimize contact with the tape and prevent contamination. Heater 502 is used to heat the tape. Heater 502 may comprise a plurality of stages, e.g. 502a, 502b, 502c, wherein each stage incrementally heats the tape to a desired temperature. This will reduce thermal shock of the tape substrate. Note that in this embodiment, the heater includes supporting pipe 508. This pipe has a plurality of ports (not shown), which allows the passage of gases and/or other materials into and/or out of the pipe. The tape feeds into this stage via tape port 506 and passes out of this stage via tape port 507. Note that tape ports 506 and 507 are not required to be narrow slits, like those on the transition chambers 701. Alternatively, the narrow slits may not be part of the transition chambers, and instead tape ports 506 and 507 may comprise narrow slits. Material ports 504 and 505 provide an inlet and outlet, respectively, for the gases that are to be used to define the environment in this stage. Cooling pipes 503 may be provided to lower the external temperature of the stage 402. Alternatively, cooling jackets may be built directly into the stage 402.

[0034] The following table provides a working example of the environment of the initialization stage. The values are preferred values, as well as useable values, that are provided by way of example only. Note that SCCM is standard cubic centimeters per minute.

TABLE I
Initialization Stage 402
Variable	Preferred	Operating
Input Tape Temperature	Room Temperature	Room Temperature
Output Tape Temperature	350° C.	200-550° C.
Pressure	5-15 Torr	1-700 Torr
Gas Flow Rate	800-1000 SCCM	100-2000
Gas Composition: H2	22-26%	3%-30%
Ag	78-74%	97%-70%

[0035] The next stage is the deposition stage 403. This stage preferably comprises at least one reactor or reaction chamber 601 to deposit one or more materials onto the tape substrate onto which the superconductor layer is deposited. As shown in FIG. 6A, this section may comprise multiple reaction chambers 601a, 601b, 601c which may be separated by transition chamber 701 in FIG. 7A. Particular superconductors may require the deposition of different materials, different concentrations, different temperatures, different pressures, and/or combinations thereof that would require more than one different operating environment. Each chamber is preferably similar, however the chambers may be made larger or smaller in the direction of tape travel if a particular environment needs a particularly longer or shorter growing time, and/or the layer needs to be thicker or thinner. Note that since the tape is moving at a constant speed, time can be equated to distance, such that if a longer deposition time is needed (and/or a thicker film is needed), then the reactive zone would be longer or the growth rate higher, and vice versa. Similarly, changing the tape speed will also change the deposition time, e.g. slowing the tape will result in longer deposition times and thicker films, and vice versa.

[0036] FIG. 6A depicts an example of an embodiment of a reactor 601. The reactor includes at least one support 604, preferably composed of quartz or a non-reactive material (e.g. stainless steel). Other materials could include gold, platinum, aluminum oxide, LaAlO3, SrTiO3, and/or other metal oxide materials. The support should be polished smooth, so as not to snag or kink the tape, which would damage the atomic ordering of the substrate, and result in reduced quality HTS film. Also, the support should only be as large as necessary to prevent sag, this will minimize contact with the tape and prevent contamination. The support may include a heater to supplement heat provided by the heating element 613, e.g. a lamp. This prevents the support from acting as a heat sink. The sides of the reactor may comprise quartz, a non-reactive material (e.g. stainless steel), or may comprise some other material that is lined with quartz or a non-reactive material. Other non-reactive materials could include gold, platinum, aluminum oxide, LaAlO3, SrTiO3, and/or other metal oxide materials. The tape feeds into this stage via tape port 605 and passes out of this stage via narrow tape port 606. Note that tape ports 605 and 606 are not required to be narrow slits, like those on the transition chambers 701. Alternatively, the narrow slits may not be part of the transition chambers, and instead tape ports 605 and 606 may comprise narrow slits. Material ports 607 provide an outlet for the materials that are to be used in this stage. As shown in the bottom view of a reactor 601 of FIG. 6D, the ports 607 are arranged to facilitate a laminar flow of materials in the reactor 601. In other words, material flows in from the shower head 603 and then out through ports 607.

[0037] The reactor 601 includes a lamp 602 and shower head (or distribution head) 603. FIGS. 6B and 6C depict a side view and a top view, respectively, of the lamp 602 and shower-head 603 arrangement shown in FIG. 6A. FIG. 6E depicts a perspective view of the shower head, substrate, and support (note that the lamp 602 has been omitted in this view). The lamp heats the tape to a desired temperature, which will allow for the deposition of materials. The lamp also provides ultraviolet and visible light which significantly enhance the growth rate, i.e. increases the speed of growth through enhanced surface diffusion of the reacting species, which in turn allows for rapid growth of thick layers, and faster tape speeds and/or smaller reactors. The lamp uses a reflector to direct the light onto the reaction area 609, which is the area immediately beneath the shower-head 603. This reduces heat flux to the chamber walls. The lamp is preferably a quartz halogen lamp and comprises a plurality of light bulbs 608 that extend along the length of the lamp 602. Note that other ultra-violet/visible (UVN) light sources may be used, for example xenon discharge, mercury vapor, or excimer laser light. The shower-head 603 provides a laminar flow of the reactant vapors mixed with a carrier gas to the deposition region of the reactor at the substrate tape 408. The shower-head 603 is preferably made from quartz, but may also be another non-reacting material such as stainless steel. Other materials could include gold, platinum, aluminum oxide, LaAlO3, SrTiO3, and/or other metal oxide materials.

[0038] The area below the shower-head is the deposition region of the reactor. The size of this region is selected with respect to other system characteristics, e.g. the tape speed, deposition rate, chamber pressure, etc. to produce a film of a desired thickness. When not in the deposition region, the tape 408 is covered by shields 612 to prevent material from coating the tape.

[0039] The dimensions and placement of the distribution head 603 depend on the width of the substrate 408. For example, as shown in FIG. 6B, for a substrate 408 having a width B 612, the width A 613 of the support 604 is preferably slightly smaller than B, e.g. B minus 2 mm. However, A may be operative for values in the range of B plus 2 mm to B minus 2 mm. The width C 610 of the shower head is preferably larger than B, e.g. B plus 10 mm. However, C may be operative for values in the range of B plus 15 mm to B minus 2 mm. The spacing D 611 between the shower head and the substrate is preferably greater than or equal to B. However, D may be operative for values of greater than or equal to B/2.

[0040] The lamp housing also preferably includes a cooling jacket 610 as part of the lamp reflector. Different coolants may be used in the jackets, e.g. water, oil, glycol, etc. The sides of the reactor may also include cooling jackets and/or cooling pipes 614. The cooling jacket(s) not only reduce the reaction chamber external temperature to a safe range, but also reduce unwanted buildup of deposition materials on the walls by reducing the wall temperature to a point where chemical reaction of species does not occur.

[0041] The reactor also may preferably include quality control port 611. This port would allow viewing of the tape during the deposition process, and/or permit access for testing the quality of the tape.

[0042] The deposition materials (reactant chemicals) or precursors that combine at the substrate to form the deposited film, e.g. HTS, buffer layer or overcoat layer, are provided by precursor system 407. Known systems include gas, liquid, solid and slurry preparation systems. Solid precursor delivery systems typically volatilize the solid precursor in a separate heated vessel, pass a carrier gas through the vessel, and then pass the carrier gas/precursor vapor to the reaction chamber. The solid precursors could be separate or mixed as solids into one mass for vaporization. Slurry precursor delivery systems vaporize, in a separate chamber equipped with a hot zone, small amounts of a thick slurry containing all or a subset of all of the precursors dissolved in a solvent to form the slurry. The liquid precursor delivery system, vaporizes in a separate chamber equipped with a hot zone, small amounts of a liquid solution containing all or a subset of all of the precursors dissolved in a solvent. The vaporized precursors may then be injected into the reactor shower head for delivery to the tape 408. A liquid precursor solution can also be atomized and then vaporized for injection into the reactor shower head.

[0043] For the integration of YBCO superconductors with continuous metal foil substrates, three reactors are preferably used. The first two reactors provide buffer layers, and the third reactor provides the YBCO layer. The first reactor 601 a deposits a thin layer of buffer, preferably cerium oxide (CeO2). The buffer layers suffice to prevent other diffusion of speed between the metal substrate and the superconducting layer, as well as provide an atomically ordered template onto which to grow atomically ordered subsequent buffer layers or superconductor layers. This layer is deposited at relatively low temperature, as compared to the next two reactors, and prevents the nickel from oxidizing, which would destroy the atomic structure of the nickel substrate surface on which the follow-on layers are grown. Note that this reactor operates in a reducing environment of forming gas, e.g. hydrogen, but also grows an oxide layer, which means that oxygen is also provided into the reactor. Because of the relatively low pressure (as compared with a standard atmosphere), there is no risk of explosion. The following table provides a working example of the environment of the first reactor. The values are preferred values, as well as useable values, which are provided by way of example only.

TABLE 2
CeO Buffer Layer by Reactor 601a
Variable	Preferred	Operating
Reactor Temperature	600-700° C.	550-750° C.
Reactor Pressure	2-4 Torr	10 Torr
Carrier Gas Flow Rate	100-400 SCCM	100-400 SCCM
Oxygen Flow Rate	250-700 SCCM	200-1000 SCCM
Reducing Gas	H2 22-26%	3-30%
	Ag 78-74%	97-70%
Reducing Gas Flow Rate	200-600 SCCM	100-1000 SCCM

[0044] The second reactor 601b deposits a higher deposition temperature buffer layer, preferably yittria stabilized zirconia (YSZ) buffer. This buffer layer prevents the inter-diffusion of the first buffer layer and the metal substrate into the YBCO layer. This reactor operates in an oxidizer-rich environment composed of O2, N2O, O3, combinations thereof, or other oxidizing agents at a pressure of from 1 to 5 Torr, and at a temperature of 600-700° C. The following table provides a working example of the environment of the second reactor. The values are preferred values, as well as useable values, which are provided by way of example only.

TABLE 3
YSZ Buffer Layer be Reactor 601b
	Variable	Preferred	Operating
	Reactor Temperature	780-830° C.	750-850° C.
	Reactor Pressure	2-4 Torr	1-10 Torr
	Oxygen Flow Rate	300-600 SCCM	100-750 SCCM
	Argon Flow Rate	500-8000 SCCM	200-2000 SCCM

[0045] The third reactor 601c deposits the YBCO layer also in an oxidizer-rich environment. The thickness of the YBCO layer and its chemical purity and crystalline quality determine the critical current of the fabricated superconducting tape. The critical current is the current beyond which the superconductor is no longer superconducting. The following table provides a working example of the environment of the third reactor for precursors in solid form. The values are preferred values, as well as useable values, which are provided by way of example only.

TABLE 4
YBCO Layer by Reactor 601c Using Solid Form Precursors
Variable	Preferred	Operating
Reactor Temperature	780-835° C.	750-850° C.
Reactor Pressure	2-4 Torr	1-10 Torr
Precursor B Temperature	270-280° C.	265-285° C.
Precursor C Temperature	165-185° C.	150-190° C.
Precursor Y Temperature	165-185° C.	150-190° C.
Oxygen Flow Rate	100-500 SCCM	100-1000 SCCM
N2O Flow Rate	100-300 SCCM	100-1000 SCCM
Argon Flow Rate	500-800 SCCM	300-2000 SCCM

[0046] The following table provides a working example of the environment of the third reactor for precursors in solid (Table 4) and liquid (Table 5) forms. The values are preferred values, as well as useable values, which are provided by way of example only. Note that M is molality.

TABLE 5
YBCO Layer by Reactor 601c Using Liquid Form Precursors
Variable	Preferred	Operating
Reactor Temperature	780-830° C.	700-900° C.
Reactor Pressure	2-3 Torr	1-10 Torr
Precursor Temperature	20-40° C.	15-45° C.
Precursor Concentration	0.05-0.1 M	0.01-0.3 M
Argon Flow Rate	400-500 SCCM	200-1000 SCCM
Oxygen Flow Rate	300-500 SCCM	200-1000 SCCM
N2O Flow Rate	200-500 SCCM	100-1000 SCCM

[0047] The deposition stage 403 also includes transition chambers 701 between stage 402 and the first reactor, between reactors, and between the last reactor and stage 404. FIG. 7A depicts an example of an embodiment of a transition chamber. The tape feeds into the transition chamber via narrow slit 703 and passes out of the transition chamber via narrow slit 704. The slits are used to minimize the passage of gases and other materials from reactor chamber to transition chamber, and visa-versa. Therefore, the transition chambers isolate each stage or reactor from the other stages and/or reactors, and thereby prevent cross-contamination of materials and/or gases from one stage or reactor to another stage or reactor. The transition chamber has a vacuum system 706 that controls any materials or gases leaking in from either end of the transition chamber, and may be operated at a pressure that is either higher or lower than the nominal reaction chamber pressure.

[0048] The transition chamber preferably includes at least one support 702 for the moving tape substrate, preferably composed of quartz or a non-reactive material (e.g. stainless steel). Other materials could include gold, platinum, aluminum oxide, LaAlO3, SrTiO3, and/or other metal oxide materials. The support should be polished smooth, so as not to snag or kink the tape, which would damage the atomic ordering of the substrate, and result in reduced quality HTS film. Also the support should only be as large as necessary to prevent sag, this will minimize contact with the tape and prevent contamination.

[0049] The transition chamber may include one or more heating elements 707 that allow the temperature of the tape to be maintained and/or adjusted while in the transition chamber. The heater 707 may maintain the temperature of the tape, or it may adjust the temperature (either higher or lower) to a point, e.g. midpoint, between the two stages connected to it. For example, if one reactor has a temperature of 550° C. and the other reactor has a temperature of 700° C., then the transition chamber may be set to have a temperature of 625° C. This will reduce thermal shock of the tape, as it moves between stages and/or reactors. Note that in this embodiment, the heating element 707 includes supporting pipe 711. This pipe 711 has a plurality of ports 710, which allows the passage of gases and/or other materials into and/or out of the pipe. FIG. 7B depicts a side view of the pipe 711 with ports 710.

[0050] The transition chamber preferably includes at least one port 705 to allow the introduction of at least one gaseous specie into the transition chamber that could stabilize or enhance the buffer layer (s) or the superconductor layer(s) formed on the substrate, or enhance the formation of follow-on layers on the tape. For example, a transition chamber may provide oxygen to the tape, which would help maintain oxygen stoichiometry in the deposited films. Any introduced gaseous materials would be removed by vacuum system 706 and would not pass into either stage/reactor.

[0051] The transition chamber also preferably includes a cooling jacket 708. Different coolants may be used in the jackets, e.g. water, oil, glycol, etc. The cooling jacket not only reduce the external temperature to a safe range, but also reduce unwanted buildup of deposition materials on the walls by reducing the wall temperature to a point where chemical reaction of species does not occur.

[0052] The transition chamber also may preferably include quality control port 709. This port would allow viewing of the tape during the deposition process, and/or permit access for testing the quality of the tape.

[0053] The following table provides working examples of the environments of the transition chambers 701-1, 701-2, 701-3, and 701-4. The values are preferred values, as well as useable values, which are provided by way of example only.

TABLE 6
Transition Chamber Environments
Chamber	Variable	Preferred	Operating
701-1	Temperature	500° C.	400-700° C.
	Pressure	3 Torr	1-10 Torr
	Gas Composition: H2	22-26%	3-30%
	Ag	78-74%	97-70%
	Gas Flow Rate	500 SCCM	100-1000 SCCM
701-2	Temperature	600° C.	450-800° C.
	Pressure	3 Torr	1-10 Torr
	Gas Composition: O2	100%	100%
	Gas Flow Rate	500 SCCM	100-2000 SCCM
701-3	Temperature	700° C.	650-850° C.
	Pressure	3 Torr	1-10 Torr
	Gas Composition: O2	100%	100%
	Gas Flow Rate	500 SCCM	100-1500 SCCM
701-4	Temperature	650° C.	600-800° C.
	Pressure	10 Torr	2-100 Torr
	Gas Flow: O2	500 SCCM	300-2000 SCCM
	N2O	300 SCCM	300-2000 SCCM

[0054] The next stage is the anneal stage 404. This stage allows for increasing the oxygen stoichiometry in the superconducting layer on the substrate tape, and cools down the complete processed tape. After this stage, the tape can be exposed to normal air without degradation of the superconducting layer, and thus no further transition chambers are required. The tape is in this stage for about 30-60 minutes. The tape is at about 800-650° C. when it enters this stage and is about 300° C. or lower when it exits this stage. The tape is in an oxygen atmosphere in this stage.

[0055] FIG. 8 depicts an example of an anneal stage. This stage includes at least one support 801, preferably composed of quartz or a non-reactive material (e.g. stainless steel). Other materials could include gold, platinum, aluminum oxide, LaAlO3, SrTiO3, and/or other metal oxide materials. The support should be polished smooth, so as not to snag or kink the tape, which would damage the atomic ordering of the substrate, and result in reduced quality HTS film. Also, the support should only be as large as necessary to prevent sag, this will minimize contact with the tape and prevent contamination. Heater 802 is used to heat the tape. Heater 802 may comprise a plurality of stages, e.g. 802a, 802b, 802c, wherein each stage decrements the temperature of the tape to a desired temperature. This will reduce thermal shock of the tape substrate. Note that in this embodiment, the heater includes supporting pipe 808. This pipe has a plurality of ports (not shown), which allows the passage of gases and/or other materials into and/or out of the pipe. The tape feeds into this stage via tape port 806 and passes out of this stage via tape port 807. Note that tape ports 806 and 807 are not required to be narrow slits, like those on the transition chambers 701. Alternatively, the narrow slits may not be part of the transition chambers, and instead tape ports 806 and 807 may comprise narrow slits. Material ports 804 and 805 provide an inlet and outlet, respectively, for the gases that are to be used to define the environment in this stage. Cooling pipes 803 may be provided to lower the external temperature of the stage 404. Alternatively, cooling jackets may be built directly into the stage 404.

[0056] The following table provides a working example of the environment of the anneal stage. The values are preferred values, as well as useable values, that are provided by way of example only.

TABLE 7
Anneal Stage Environments
	Stage	Variable	Preferred	Operating
	Stage I 802a	Temperature	550° C.	500-700° C.
		Pressure	760 Torr	100-1500 Torr
		O2 Flow	500 SCCM	100-2000 SCCM
	Stage II 802b	Temperature	350° C.	300-400% C
		Pressure	760 Torr	100-1500 Torr
		O2 Flow	500 SCCM	100-2000 SCCM
	Stage III 802c	Temperature	200° C.	≦300° C.
		Pressure	760 Torr	100-1500 Torr
		O2 Flow	500 SCCM	100-2000 SCCM

[0057] Optional sealing stage 405 may coat the tape with a protective coating, e.g. lacquer, plastic, polymer, cloth, metal (e.g. silver, gold, or copper). This materials are cited by way of example only as other coatings could be used.

[0058] Optional stage 418 performs quality control testing that ensures the proper characteristics of the final superconducting tape, as well as the tape under process. Note that this stage may use the ports 611 and/or 709. Further note that quality control testing may be incorporated at any of the reactors 601a, b, c, in any of the transition chamber chambers 701, and/or at the pre-treat or post anneal stages. Further note that quality control testing may be performed separately from system 400. This quality control may incorporate direct or indirect measurement of YBCO properties including atomic order, temperature, reflectivity, surface morphology, thickness, microstructure, Tc, Jc, microwave resistivity, etc., or the direct or indirect measurement of the properties of the buffer layers or the coating layers of the tape including atomic order, temperature, reflectivity, surface morphology, thickness, microstructure, etc. Note that Jc is the critical current density or the maximum amount of current that the wire can handle before breakdown. Some superconductor elements may have a Jc of 100,000 amps/cm2or greater. Good superconductor elements may have a Jc of 500,000 amps/cm2 or greater.

[0059] The invention preferably uses a take-up reel 406 to spool the superconducting tape. Note that the length of the wire tape 408 is limited only by the size of the pay-out and take-up reels. Thus, the tape may be any desired length, depending on the length of the input/output reels. For example, the invention may produce 1 or 2 kilometer (km) long wire tapes, or even longer.

[0060] Note that computer 409 can be used to control the different aspects of this invention. For example, it can control the concentration of materials flowing into the reactors, the temperature of the reactors or the transition chambers, the tape speed, the tape tension, the flow rate of the materials into the different reactors or stages, etc. This would allow feedback from the quality control testing to improve the characteristics of the wire tape.

[0061] The system 400 also may optionally include pressure control chambers 414 and 415, which assist in controlling the pressure in the initialization stage 402 and the anneal stage 404, respectively. A transition chamber 701 may be used a pressure control chamber. In such a case, the heating element 707, supporting pipe 711, and/or water jacket 708 may not be needed. Also narrow slits may not be used between chamber 414 and stage 402, and/or between chamber 415 and stage 404. The system may also use an additional transition chamber 413 between initialization stage 402 and normal atmosphere, or between chamber 414 (if used) and normal atmosphere. Chamber 413 prevent the mixing of normal atmosphere and the environment of the initialization stage 402. For example, chamber 413 prevents oxygen from the normal atmosphere from entering initialization stage 402, as well as preventing hydrogen from the initialization stage from entering the normal atmosphere.

[0062] The system uses vacuum pumps 417 to achieve the desired pressure in the various components of the system. Liquid nitrogen traps and filters 416 are used to remove materials from the exhaust of the reactors 601 to prevent damage to the pumps 417. The other components may also use such traps and/or filters to prevent damage to their associated pumps.

[0063] FIGS. 9A-9D depict examples of different embodiment of the inventive superconducting wire produced by the system of FIG. 4. FIG. 9A depicts tape substrate 901 with buffer layer 902 and HTS layer 904. FIG. 9B depicts tape substrate 901 with buffer layers 902, 903, HTS layer 904, and sealing layering 905.

[0064] FIG. 9C depicts a two HTS layer wire that includes substrate 901 with buffer layers 902, 903 and sealing layer 905. Buffer layer 906 and 907 separates first HTS layer 904 and second HTS layer 907. Note that the buffer layer 906 may be used here, and 906 is not necessarily equivalent to either 902 or 903. This wire may be made by using additional reactors, transition chambers, and/or other components in the system of FIG. 4 to form the additional layers. This wire may also be made by repeating the processing with the system of FIG. 4. In other words, after completion of the first HTS layer, the wire is spooled without adding the sealing layer. The spool is then moved to the pay-out reel 401. Selected ones of the components of the system of FIG. 4 are then used to form the subsequent layers including the second HTS layer.

[0065] FIG. 9D depicts another example of a two HTS layer wire that has an HTS layer on each side of the substrate his wire may be made by using additional reactors, transition chambers, and/or other components in the system of FIG. 4 to form the additional layers. In order to form layers on the opposite side, additional pieces of equipment would be added to the system of FIG. 4 that twists or flips the tape as needed to process the bottom side of the tape. This wire may also be made by repeating the processing with the system of FIG. 4. In other words, after completion of the first HTS layer, the wire is spooled without adding the sealing layer. To reverse the side of the tape, the take-up reel 406 would wind the tape from the bottom of the reel (counter-clockwise), instead of the top of the reel (clock-wise), as shown in FIG. 4. The spool is then moved to the pay-out reel 401. The system of FIG. 4 then processes the tape to form the subsequent layers including the second HTS layer.

[0066] The inventive wire may be used in the transporting of current, the distribution of power, in an electric motor, in an electric generator, in a transformer, in a fault current limiter, in superconducting magnetic energy storage (SMES) system, and a variety of magnets (including, but not limited to, MRI systems, magnetic levitation transport systems, particle accelerators, and magnetohydrodynamic power systems).

[0067] The inventive system may be used to form the inventive superconducting wire from different superconducting materials, including, but not limited to YBCO, YBa2Cu3O7−x, NbBa2Cu3O7−x, LaBa2Cu3O7−x, Bi2Sr2Ca2Cu3Oy, Pb2−xBixSr2Ca2Cu3Oy, Bi2Sr2Ca1Cu2Oz, Tl2Ba2CaCu2Ox, Tl2Ba2Ca2Cu3Oy, Tl1Ba2Ca2Cu3Oz, Tl1−xBixSr2−yBayCa2Cu4Oz, Tl1Ba2Ca1Cu2Oz, Hg1Ba2Ca1Cu2Oy, Hg1Ba2Ca2Cu3Oy, MgB2, copper oxides, rare earth metal oxides, and other high temperature superconductors. The invention may also include different buffer materials, including but not limited to CeO2(or CEO), Y2O3—ZrO2(or YSZ), Gd2O3, Eu2O3, Yb2O3, RuO2, LaSrCoO3, MgO, SiN, BaCeO2, NiO, Sr2O3, SrTiO3, and BaSrTiO3.

[0068] Although the present invention and its advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims. Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the disclosure of the present invention, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the present invention. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps.

Claims

1. A system for forming a wire with a tape substrate comprising: a first reel for dispensing the tape substrate; at least one deposition chamber that receives that tape substrate from the first reel and forms a layer of a material on the tape substrate; and a second reel that spools the tape substrate with the layer of material from the at least one deposition chamber.

2. The system of claim 1 further comprising: a tension controller that controls the tension of the tape substrate.

3. The system of claim 1 wherein the tape substrate comprises a metal ribbon.

4. The system of claim 3 wherein the metal ribbon comprises nickel.

5. The system of claim 1 wherein the first reel and the second reel operate at an adjustable constant rate.

6. The system of claim 5 further comprising: a speed controller that controls the speed of the tape substrate.

7. The system of claim 1 further comprising: a pre-clean stage that removes oil-based contaminants from the tape substrate.

8. The system of claim 7 wherein the pre-clean stage comprises one of: a vapor treatment, a mechanical treatment, a bath treatment, and a combination thereof.

9. The system of claim 1 further comprising: an initialization stage that subjects the tape substrate to a treatment prior to delivery to the at least one deposition chamber.

10. The system of claim 9 wherein the treatment is heating the tape substrate to a temperature that is between an operating temperature of the at least one deposition chamber and an ambient temperature.

11. The system of claim 9 wherein the initialization stage has an atmosphere that is comprised of a reducing material.

12. The system of claim 11 wherein the reducing material is selected from the group consisting of: carbon monoxide, hydrogen, and ammonia.

13. The system of claim 9 wherein the initialization stage has an atmosphere that comprises a non-reacting gas.

14. The system of claim 13 wherein the non-reacting gas is selected from the group consisting of: argon, neon, xenon, nitrogen, and combinations thereof.

15. The system of claim 9 wherein the treatment is reducing contaminants from the tape substrate.

16. The system of claim 9 wherein the treatment is removing an oxide layer that is on the tape substrate.

17. The system of claim 9 wherein the initialization stage comprises: at least one support that supports the tape substrate.

18. The system of claim 17 wherein the at least one support is composed of a material selected from the group consisting of: quartz, stainless steel, gold, platinum, aluminum oxide, LaAlO3, SrTiO3, and a metal oxide material.

19. The system of claim 9 wherein the initialization stage comprises: a heating element that heats the tape substrate to a predetermined temperature.

20. The system of claim 9 wherein the initialization stage comprises: a plurality of heating elements, wherein each heating element incrementally heats the tape substrate to a predetermined temperature.

21. The system of claim 9 wherein the initialization stage comprises: an input opening that allows ingress of the tape substrate into the initialization stage; and an output opening that allows egress of the tape substrate from the initialization stage.

22. The system of claim 21 wherein: each of the input opening and the output opening have a profile that admits the tape substrate, minimizes leakage of an atmosphere of the initialization stage out of the initialization stage, and minimizes leakage of an external atmosphere into the initialization stage.

23. The system of claim 22 wherein: the profile of input opening is a slit, and the profile of the output opening is a slit.

24. The system of claim 1 wherein the at least one deposition chamber comprises: at least one support that supports the tape substrate.

25. The system of claim 24, wherein the at least one deposition chamber comprises: at least three supports that support the tape substrate.

26. The system of claim 24 wherein the at least one support is composed of a material selected from the group consisting of: quartz, stainless steel, gold, platinum, aluminum oxide, LaAlO3, SrTiO3, and a metal oxide material.

27. The system of claim 24 wherein the at least one support comprises: a heating element that heats the tape substrate.

28. The system of claim 1 wherein the at least one deposition chamber comprises: an input opening that allows ingress of the tape substrate into at least one deposition chamber; and an output opening that allows egress of the tape substrate from the at least one deposition chamber.

29. The system of claim 28 wherein: each of the input opening and the output opening have a profile that admits the tape substrate, minimizes leakage of an atmosphere of the at least one deposition chamber out of the at least one deposition chamber, and minimizes leakage of an external atmosphere into the at least one deposition chamber.

30. The system of claim 28 wherein: the profile of input opening is a slit, and the profile of the output opening is a slit.

31. The system of 1 wherein the at least one deposition chamber comprises: at least one distribution head to provide a laminar flow of material used to form the material onto the tape substrate.

32. The system of claim 31 wherein the at least one distribution head is composed of a material selected from the group consisting of: quartz, stainless steel, gold, platinum, aluminum oxide, LaAlO3, SrTiO3, and a metal oxide material.

33. The system of claim 31 further comprising: a precursor delivery system that provides a material used to form the material to the distribution head.

34. The system of claim 1 wherein the at least one deposition chamber comprises: a lamp that heats the tape substrate to a predetermined temperature.

35. The system of claim 34 wherein the lamp comprises: a reflector to direct the heat onto the tape substrate.

36. The system of claim 34 wherein the lamp comprises: at least one cooling jacket that reduces a temperature of the lamp which reduces formation of a material on the lamp.

37. The system of claim 1 wherein the at least one deposition chamber comprises: a lamp that provides light to the tape substrate; wherein the light enhances a growth rate of material used to form the superconducting material onto the tape substrate.

38. The system of claim 37 wherein the lamp comprises: a reflector to direct the light onto the tape substrate.

39. The system of claim 37 wherein the light comprises: at least one of visible light and ultraviolet light.

40. The system of 1 wherein the at least one deposition chamber comprises a material selected from the group consisting of: quartz, stainless steel, gold, platinum, aluminum oxide, LaAlO3, SrTiO3, and a metal oxide material.

41. The system of claim 1 wherein the at least one deposition chamber comprises: a cooling system that reduces a temperature of at least a portion of the exterior of the at least one deposition chamber.

42. The system of claim 1 wherein the at least one deposition chamber comprises: a cooling system that reduces a temperature of at least a portion of the at least one deposition chamber which reduces formation of a material in the deposition chamber.

43. The system of claim 1 wherein the at least one deposition chamber comprises: at least one quality control port that provides access to the tape substrate to conduct at least one quality control test.

44. The system of claim 43 wherein: the at least one quality control test is a visual inspection of the tape substrate.

45. The system of claim 43 wherein: the at least one quality control test is a measurement of a characteristic of the tape substrate.

46. The system of claim 1 further comprising: at least one transition chamber that isolates an atmosphere of the deposition chamber from an atmosphere external to the deposition chamber.

47. The system of claim 1 wherein the transition stage comprises: at least one support that supports the tape substrate.

48. The system of claim 47 wherein the at least one support is composed of a material selected from the group consisting of: quartz, stainless steel, gold, platinum, aluminum oxide, LaAlO3, SrTiO3, and a metal oxide material.

49. The system of claim 46 wherein the transition chamber comprises: a heating element that heats the tape substrate to a predetermined temperature.

50. The system of claim 49 wherein the predetermined temperature is between a temperature external to the deposition chamber and a temperature of the deposition chamber.

51. The system of claim 46 wherein the transition chamber comprises: an opening that allows ingress of a gas used to define an atmosphere within the transition chamber; and an opening that allows egress of the gas from the transition chamber.

52. The system of claim 51 wherein the gas is selected from the group consisting of: hydrogen, argon, N2O, nitrogen, and oxygen.

53. The system of claim 46 wherein the transition chamber comprises: an input opening that allows ingress of the tape substrate into the transition chamber; and an output opening that allows egress of the tape substrate from the transition chamber.

54. The system of claim 53 wherein: each of the input opening and the output opening have a profile that admits the tape substrate, minimizes leakage of an atmosphere of the deposition chamber out of the deposition chamber, and minimizes leakage of the external atmosphere into the deposition chamber.

55. The system of claim 54 wherein: the profile of input opening is a slit, and the profile of the output opening is a slit.

56. The system of claim 46 wherein the at least one transition chamber comprises: at least one quality control port that provides access to the tape substrate to conduct at least one quality control test.

57. The system of claim 56 wherein: the at least one quality control test is a visual inspection of the tape substrate.

58. The system of claim 56 wherein: the at least one quality control test is a measurement of a characteristic of the tape substrate.

59. The system of claim 46 wherein the at least one transition chamber comprises: a cooling system that reduces a temperature of at least a portion of the exterior of the at least one transition chamber.

60. The system of claim 46 wherein the at least one transition chamber comprises: a cooling system that reduces a temperature of at least a portion of the at least one transition chamber which reduces formation of a material in the transition chamber.

61. The system of claim 1 further comprising: an anneal stage that subjects the tape substrate to a treatment subsequent to operation of the at least one deposition chamber.

62. The system of claim 61 wherein the treatment is cooling the tape substrate to a temperature that is between an operating temperature of the at least one deposition chamber and an ambient temperature.

63. The system of claim 61 wherein the anneal stage has an atmosphere that is comprised of an oxidizing material.

64. The system of claim 61 wherein the treatment is adding oxygen to the tape substrate.

65. The system of claim 61 wherein the anneal stage comprises: at least one support that supports the tape substrate.

66. The system of claim 65 wherein the at least one support is composed of a material selected from the group consisting of: quartz, stainless steel, gold, platinum, aluminum oxide, LaAlO3, SrTiO3, and a metal oxide material.

67. The system of claim 61 wherein the anneal stage comprises: a heating element that heats the tape substrate to a predetermined temperature.

68. The system of claim 61 wherein the anneal stage comprises: a plurality of heating elements, wherein each heating element decrementally heats the tape substrate to a predetermined temperature.

69. The system of claim 9 wherein the anneal stage comprises: an input opening that allows ingress of the tape substrate into the anneal stage; and an output opening that allows egress of the tape substrate from the anneal stage.

70. The system of claim 69 wherein: each of the input opening and the output opening have a profile that admits the tape substrate, minimizes leakage of an atmosphere of the anneal stage out of the anneal stage, and minimizes leakage of an external atmosphere into the anneal stage.

71. The system of claim 70 wherein: the profile of input opening is a slit, and the profile of the output opening is a slit.

72. The system of claim 1 further comprising: a sealing stage that coats the tape with a protective layer.

73. The system of claim 72 wherein the protective layer is selected from the group consisting of: lacquer, plastic, polymer, cloth, metal, silver, gold, and copper.

74. The system of claim 1 further comprising: a quality control tester that performs at least one measurement of at least one of the system, the tape substrate, and the layer.