Claims
- 1. Apparatus for preventing gate oxide damage in a CMOS circuit comprising:
a substrate of a first conductivity having an active area; a well of a second conductivity formed within the substrate, such that the well and the substrate cooperate to act as a diode; an insulating layer formed above the substrate surrounding the well; and a polysilicon layer formed directly over the active area and the well to define a polysilicon structure of the second conductivity, the polysilicon structure extending between the active area to at least a portion of the well.
- 2. The apparatus of claim 1, wherein the insulating layer is an oxide layer formed over at least a portion of the polysilicon structure.
- 3. The apparatus of claim 2, wherein a charge is dissipated as the polysilicon structure is formed.
- 4. Apparatus for preventing gate oxide damage in a CMOS circuit comprising:
a substrate of a first conductivity having an active area; a well of a second conductivity formed within the substrate, such that the well and the substrate cooperate to act as a diode; an insulating layer formed above the substrate surrounding the well; a polysilicon layer formed directly over the active area and the well to define a polysilicon structure of the second conductivity, the polysilicon structure extending between the active area to at least a portion of the well; and a connecting pad located the well of the second conductivity.
- 5. The apparatus of claim 4, wherein the insulating layer is an oxide layer formed over at least a portion of the polysilicon structure.
- 6. The apparatus of claim 4, wherein a charge is dissipated as the polysilicon structure is formed.
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application is a divisional of application No. 08/829,772, filed Mar. 31, 1997, the disclosure of which is incorporated herein by reference.
Divisions (1)
|
Number |
Date |
Country |
Parent |
08829772 |
Mar 1997 |
US |
Child |
10191931 |
Jul 2002 |
US |