Claims
- 1. A method of manufacturing an SOI substrate having a crystalline silicon layer comprising:
- providing a semiconductor substrate; and
- ion implanting oxygen in a portion of said semiconductor substrate; and
- subsequent to said step of ion implanting, annealing said portion by irradiating said portion with an excimer laser beam;
- whereby an oxide layer and said crystalline silicon layer are formed on a surface of said semiconductor substrate.
- 2. The method according to claim 1 further comprising a step of epitaxially growing a silicon layer on said crystalline silicon layer.
- 3. The method according to claim 2, wherein said steps of ion implanting, annealing said portion and epitaxial growing are repeated one or more times, whereby a multi-layered structure is formed.
- 4. The method according to claim 2 wherein said step of epitaxially growing a silicon layer takes place at a reduced pressure at about 560.degree. C., about 70 sccm of Si.sub.2 H.sub.6, at about 2.times.10.sup.-5 Torr and at a rate of about 7 nm/min.
- 5. The method according to claim 1 wherein said semiconductor substrate comprises silicon.
- 6. The method according to claim 1 wherein said step of ion implanting oxygen takes place at an accelerated energy of approximately 300 KeV and at an order of approximately 10.sup.17 /cm.sup.2.
- 7. The method according to claim 1 wherein patterning is applied to said semiconductor substrate before said step of ion implanting oxygen.
- 8. The method according to claim 1 wherein said step of irradiating is accomplished with a laser beam having a power of about 1000 to about 2000 mJ/cm.sup.2.
- 9. A method of manufacturing an SOI substrate comprising:
- (a) providing a semiconductor substrate;
- (b) ion implanting oxygen in a portion of said semiconductor substrate;
- (c) subsequent to said step of ion implanting, annealing said portion by irradiating said portion with an excimer laser beam, thereby forming an insulating film on said semiconductor substrate;
- (d) forming a first crystalline silicon film over said insulating film;
- (e) epitaxially growing a silicon layer over said first crystalline silicon film; and
- (f) forming at least one addition layer of crystalline silicon film by ion implanting said silicon layer formed over said first crystalline silicon film and repeating said steps (c) and (d).
- 10. The method according to claim 9 wherein step of ion implanting oxygen takes place at an accelerated energy of approximately 300 KeV and at an order of approximately 10.sup.17 /cm.sup.2.
- 11. The method according to claim 9 wherein patterning is applied to said semiconductor substrate before said step of ion implanting oxygen.
- 12. The method according to claim 9 wherein said step of irradiating is accomplished with a laser beam having a power of about 1000 to about 2000 mJ/cm.sup.2.
- 13. The method according to claim 9 wherein said step of epitaxially growing a silicon layer takes place at a reduced pressure at about 560.degree. C., about 70 sccm of Si.sub.2 H.sub.6, at about 2.times.10.sup.-5 Torr and at a rate of about 7 nm/min.
Priority Claims (5)
Number |
Date |
Country |
Kind |
4-112714 |
May 1992 |
JPX |
|
4-160263 |
May 1992 |
JPX |
|
4-160264 |
May 1992 |
JPX |
|
4-160265 |
May 1992 |
JPX |
|
4-162306 |
May 1992 |
JPX |
|
REFERENCE TO RELATED APPLICATION
This application is a divisional of application Ser. No. 08/245,767 filed May 18, 1994, which is a divisional of 08/051,765, filed Apr. 26, 1993 and now abandoned.
US Referenced Citations (13)
Foreign Referenced Citations (2)
Number |
Date |
Country |
57-112031A |
Jul 1982 |
JPX |
1-67935A |
Mar 1989 |
JPX |
Divisions (2)
|
Number |
Date |
Country |
Parent |
245767 |
May 1994 |
|
Parent |
51765 |
Apr 1993 |
|